Merge and end branch-hostside-wip-2008-01-25; cvs up -j branch-hostside-wip-2008...

[trains.git] / spice / diodes.com-spice.txt

diff --git a/spice/diodes.com-spice.txt b/spice/diodes.com-spice.txt
deleted file mode 100644 (file)
index 94b560d..0000000
--- a/spice/diodes.com-spice.txt
+++ /dev/null
@@ -1,17251 +0,0 @@
-*SRC=1N4728A;DI_1N4728A;Diodes;Zener <=10V; 3.30V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4728A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.972\r
-.MODEL DF D ( IS=125p RS=0.620 N=1.10\r
-+ CJO=364p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=25.0f RS=1.24 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=1N4729A;DI_1N4729A;Diodes;Zener <=10V; 3.60V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4729A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.30\r
-.MODEL DF D ( IS=114p RS=0.620 N=1.10\r
-+ CJO=319p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=22.9f RS=0.923 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=1N4730A;DI_1N4730A;Diodes;Zener <=10V; 3.90V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4730A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.63\r
-.MODEL DF D ( IS=106p RS=0.620 N=1.10\r
-+ CJO=283p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=21.1f RS=0.645 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=1N4732A;DI_1N4732A;Diodes;Zener <=10V; 4.70V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4732A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.99\r
-.MODEL DF D ( IS=87.7p RS=0.620 N=1.10\r
-+ CJO=214p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=17.5f RS=0.333 N=2.28 )\r
-.ENDS\r
-\r
-*SRC=1N4733A;DI_1N4733A;Diodes;Zener <=10V; 5.10V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4733A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.69\r
-.MODEL DF D ( IS=80.8p RS=0.620 N=1.10\r
-+ CJO=189p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=16.2f RS=0.296 N=1.87 )\r
-.ENDS\r
-\r
-*SRC=1N4734A;DI_1N4734A;Diodes;Zener <=10V; 5.60V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4734A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 4.48\r
-.MODEL DF D ( IS=73.6p RS=0.620 N=1.10\r
-+ CJO=165p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=14.7f RS=0.256 N=1.49 )\r
-.ENDS\r
-\r
-*SRC=1N4735A;DI_1N4735A;Diodes;Zener <=10V; 6.20V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4735A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.33\r
-.MODEL DF D ( IS=66.5p RS=0.620 N=1.10\r
-+ CJO=141p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=13.3f RS=0.218 N=1.16 )\r
-.ENDS\r
-\r
-*SRC=1N4736A;DI_1N4736A;Diodes;Zener <=10V; 6.80V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4736A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.05\r
-.MODEL DF D ( IS=60.6p RS=0.620 N=1.10\r
-+ CJO=123p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=12.1f RS=0.209 N=1.00 )\r
-.ENDS\r
-\r
-*SRC=1N4737A;DI_1N4737A;Diodes;Zener <=10V; 7.50V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4737A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.68\r
-.MODEL DF D ( IS=54.9p RS=0.620 N=1.10\r
-+ CJO=106p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=11.0f RS=0.247 N=1.09 )\r
-.ENDS\r
-\r
-*SRC=1N4738A;DI_1N4738A;Diodes;Zener <=10V; 8.20V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4738A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.33\r
-.MODEL DF D ( IS=50.2p RS=0.620 N=1.10\r
-+ CJO=92.8p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=10.0f RS=0.288 N=1.15 )\r
-.ENDS\r
-\r
-*SRC=1N4739A;DI_1N4739A;Diodes;Zener <=10V; 9.10V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4739A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.16\r
-.MODEL DF D ( IS=45.3p RS=0.620 N=1.10\r
-+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=9.05f RS=0.344 N=1.24 )\r
-.ENDS\r
-\r
-*SRC=1N4740A;DI_1N4740A;Diodes;Zener <=10V; 10.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4740A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.02\r
-.MODEL DF D ( IS=41.2p RS=0.620 N=1.10\r
-+ CJO=68.9p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.24f RS=0.403 N=1.30 )\r
-.ENDS\r
-\r
-*SRC=1N4741A;DI_1N4741A;Diodes;Zener 10V-50V; 11.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4741A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.94\r
-.MODEL DF D ( IS=37.5p RS=0.620 N=1.10\r
-+ CJO=101p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=7.49f RS=0.474 N=1.41 )\r
-.ENDS\r
-\r
-*SRC=1N4742A;DI_1N4742A;Diodes;Zener 10V-50V; 12.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4742A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 10.9\r
-.MODEL DF D ( IS=34.3p RS=0.620 N=1.10\r
-+ CJO=94.2p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.87f RS=0.550 N=1.49 )\r
-.ENDS\r
-\r
-*SRC=1N4743A;DI_1N4743A;Diodes;Zener 10V-50V; 13.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4743A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 11.8\r
-.MODEL DF D ( IS=31.7p RS=0.620 N=1.10\r
-+ CJO=88.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.34f RS=0.630 N=1.55 )\r
-.ENDS\r
-\r
-*SRC=1N4744A;DI_1N4744A;Diodes;Zener 10V-50V; 15.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4744A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 13.7\r
-.MODEL DF D ( IS=27.5p RS=0.620 N=1.10\r
-+ CJO=78.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.49f RS=0.804 N=1.77 )\r
-.ENDS\r
-\r
-*SRC=1N4745A;DI_1N4745A;Diodes;Zener 10V-50V; 16.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4745A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 14.6\r
-.MODEL DF D ( IS=25.7p RS=0.620 N=1.10\r
-+ CJO=74.4p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.15f RS=0.897 N=1.80 )\r
-.ENDS\r
-\r
-*SRC=1N4746A;DI_1N4746A;Diodes;Zener 10V-50V; 18.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4746A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 16.5\r
-.MODEL DF D ( IS=22.9p RS=0.620 N=1.10\r
-+ CJO=67.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.58f RS=1.10 N=1.98 )\r
-.ENDS\r
-\r
-*SRC=1N4747A;DI_1N4747A;Diodes;Zener 10V-50V; 20.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4747A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 18.4\r
-.MODEL DF D ( IS=20.6p RS=0.620 N=1.10\r
-+ CJO=62.5p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.12f RS=1.31 N=2.12 )\r
-.ENDS\r
-\r
-*SRC=1N4748A;DI_1N4748A;Diodes;Zener 10V-50V; 22.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4748A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 20.3\r
-.MODEL DF D ( IS=18.7p RS=0.620 N=1.10\r
-+ CJO=58.2p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.75f RS=1.54 N=2.29 )\r
-.ENDS\r
-\r
-*SRC=1N4749A;DI_1N4749A;Diodes;Zener 10V-50V; 24.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4749A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 22.2\r
-.MODEL DF D ( IS=17.2p RS=0.620 N=1.10\r
-+ CJO=54.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.43f RS=1.79 N=2.42 )\r
-.ENDS\r
-\r
-*SRC=1N4750A;DI_1N4750A;Diodes;Zener 10V-50V; 27.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4750A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 25.0\r
-.MODEL DF D ( IS=15.3p RS=0.620 N=1.10\r
-+ CJO=50.2p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.05f RS=2.18 N=2.68 )\r
-.ENDS\r
-\r
-*SRC=1N4751A;DI_1N4751A;Diodes;Zener 10V-50V; 30.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4751A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.8\r
-.MODEL DF D ( IS=13.7p RS=0.620 N=1.10\r
-+ CJO=46.7p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.75f RS=2.61 N=2.87 )\r
-.ENDS\r
-\r
-*SRC=1N4752A;DI_1N4752A;Diodes;Zener 10V-50V; 33.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4752A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 30.8\r
-.MODEL DF D ( IS=12.5p RS=0.620 N=1.10\r
-+ CJO=43.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.50f RS=3.07 N=2.98 )\r
-.ENDS\r
-\r
-*SRC=1N4753A;DI_1N4753A;Diodes;Zener 10V-50V; 36.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4753A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 33.7\r
-.MODEL DF D ( IS=11.4p RS=0.620 N=1.10\r
-+ CJO=41.4p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.29f RS=4.38 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=1N4754A;DI_1N4754A;Diodes;Zener 10V-50V; 39.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4754A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.7\r
-.MODEL DF D ( IS=10.6p RS=0.620 N=1.10\r
-+ CJO=39.4p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.11f RS=5.78 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=1N4755A;DI_1N4755A;Diodes;Zener 10V-50V; 43.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4755A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 40.7\r
-.MODEL DF D ( IS=9.58p RS=0.620 N=1.10\r
-+ CJO=37.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.92f RS=7.99 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=1N4756A;DI_1N4756A;Diodes;Zener 10V-50V; 47.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4756A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 44.7\r
-.MODEL DF D ( IS=8.77p RS=0.620 N=1.10\r
-+ CJO=35.2p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.75f RS=10.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=1N4757A;DI_1N4757A;Diodes;Zener >50V; 51.0V  1.00W   Diodes Inc. Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4757A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 48.7\r
-.MODEL DF D ( IS=8.08p RS=0.620 N=1.10\r
-+ CJO=33.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.62f RS=12.4 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=1N4758A;DI_1N4758A;Diodes;Zener >50V; 56.0V  1.00W   Diodes Inc. Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4758A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 53.7\r
-.MODEL DF D ( IS=7.36p RS=0.620 N=1.10\r
-+ CJO=32.0p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.47f RS=15.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=1N4759A;DI_1N4759A;Diodes;Zener >50V; 62.0V  1.00W   Diodes Inc. Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4759A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 59.7\r
-.MODEL DF D ( IS=6.65p RS=0.620 N=1.10\r
-+ CJO=30.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.33f RS=19.6 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=1N4760A;DI_1N4760A;Diodes;Zener >50V; 68.0V  1.00W   Diodes Inc. Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4760A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 65.7\r
-.MODEL DF D ( IS=6.06p RS=0.620 N=1.10\r
-+ CJO=29.0p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.21f RS=24.6 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=1N4761A;DI_1N4761A;Diodes;Zener >50V; 75.0V  1.00W   Diodes Inc. Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4761A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 72.7\r
-.MODEL DF D ( IS=5.49p RS=0.620 N=1.10\r
-+ CJO=27.7p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.10f RS=30.4 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=1N4762A;DI_1N4762A;Diodes;Zener >50V; 82.0V  1.00W   Diodes Inc. Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4762A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 79.7\r
-.MODEL DF D ( IS=5.02p RS=0.620 N=1.10\r
-+ CJO=26.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.00f RS=36.8 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=1N4763A;DI_1N4763A;Diodes;Zener >50V; 91.0V  1.00W   Diodes Inc. Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4763A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 88.6\r
-.MODEL DF D ( IS=4.53p RS=0.620 N=1.10\r
-+ CJO=25.4p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=9.05e-016 RS=47.1 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=1N4764A;DI_1N4764A;Diodes;Zener >50V; 100V  1.00W   Diodes Inc. Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N4764A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 97.6\r
-.MODEL DF D ( IS=4.12p RS=0.620 N=1.10\r
-+ CJO=24.5p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.24e-016 RS=56.8 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=1N5221B;DI_1N5221B;Diodes;Zener <=10V; 2.40V  0.500W   DIODES INC ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_1N5221B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0\r
-.MODEL DF D ( IS=85.8p RS=2.47m N=1.10\r
-+ CJO=388p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=17.2f RS=26.1 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=1N5231B;DI_1N5231B;Diodes;Zener <=10V; 5.10V  0.500W   Diodes Inc.\r
-zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N5231B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.62\r
-.MODEL DF D ( IS=40.4p RS=2.32 N=1.10\r
-+ CJO=94.6p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.08f RS=13.1 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=1N5233B;DI_1N5233B;Diodes;Zener <=10V; 6.00V  0.500W   Diodes Inc. Zener \r
-*SYM=HZEN \r
-.SUBCKT DI_1N5233B  1 2 \r
-*        Terminals    A   K \r
-D1 1 2 DF \r
-DZ 3 1 DR \r
-VZ 2 3 5.11 \r
-.MODEL DF D ( IS=34.3p RS=1.24 N=1.10 \r
-+ CJO=74.2p VJ=0.750 M=0.330 TT=50.1n ) \r
-.MODEL DR D ( IS=6.87f RS=0.460 N=1.19 ) \r
-.ENDS\r
-\r
-*SRC=1N5235B;DI_1N5235B;Diodes;Zener <=10V; 6.80V  0.500W   Diodes Inc. Zener \r
-*SYM=HZEN \r
-.SUBCKT DI_1N5235B  1 2 \r
-*        Terminals    A   K \r
-D1 1 2 DF \r
-DZ 3 1 DR \r
-VZ 2 3 4.56 \r
-.MODEL DF D ( IS=30.3p RS=1.24 N=1.10 \r
-+ CJO=61.5p VJ=0.750 M=0.330 TT=50.1n ) \r
-.MODEL DR D ( IS=6.06f RS=1.15 N=2.97 ) \r
-.ENDS\r
-\r
-*SRC=1N5239B;DI_1N5239B;Diodes;Zener <=10V; 9.10V  0.500W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_1N5239B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.72\r
-.MODEL DF D ( IS=22.6p RS=2.24 N=1.10\r
-+ CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.53f RS=6.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=1N5241B;DI_1N5241B;Diodes;Zener 10V-50V; 11.0V  0.500W   Diodes Inc. Zener \r
-*SYM=HZEN \r
-.SUBCKT DI_1N5241B  1 2 \r
-*        Terminals    A   K \r
-D1 1 2 DF \r
-DZ 3 1 DR \r
-VZ 2 3 9.12 \r
-.MODEL DF D ( IS=18.7p RS=1.24 N=1.10 \r
-+ CJO=58.2p VJ=1.00 M=0.330 TT=50.1n ) \r
-.MODEL DR D ( IS=3.75f RS=0.949 N=2.45 ) \r
-.ENDS\r
-\r
-*SRC=AZ23C10;DI_AZ23C10;Diodes;Zener <=10V; 10.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C10  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.35\r
-.MODEL DF D ( IS=12.4p RS=31.6 N=1.10\r
-+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C10W;DI_AZ23C10W;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C10W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.32\r
-.MODEL DF D ( IS=8.24p RS=30.4 N=1.10\r
-+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.65f RS=3.45 N=2.23 )\r
-\r
-*SRC=AZ23C11;DI_AZ23C11;Diodes;Zener 10V-50V; 11.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C11  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.79\r
-.MODEL DF D ( IS=11.2p RS=31.3 N=1.10\r
-+ CJO=41.5p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C12;DI_AZ23C12;Diodes;Zener 10V-50V; 12.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C12  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.78\r
-.MODEL DF D ( IS=10.3p RS=31.0 N=1.10\r
-+ CJO=39.0p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C13;DI_AZ23C13;Diodes;Zener 10V-50V; 13.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C13  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 10.7\r
-.MODEL DF D ( IS=9.51p RS=30.8 N=1.10\r
-+ CJO=37.7p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C15;DI_AZ23C15;Diodes;Zener 10V-50V; 15.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C15  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.7\r
-.MODEL DF D ( IS=8.24p RS=30.4 N=1.10\r
-+ CJO=31.4p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C16;DI_AZ23C16;Diodes;Zener 10V-50V; 16.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C16  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 13.6\r
-.MODEL DF D ( IS=7.72p RS=30.2 N=1.10\r
-+ CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C18;DI_AZ23C18;Diodes;Zener 10V-50V; 18.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C18  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.6\r
-.MODEL DF D ( IS=6.87p RS=29.9 N=1.10\r
-+ CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C18W;DI_AZ23C18W;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C18W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.5\r
-.MODEL DF D ( IS=4.58p RS=28.7 N=1.10\r
-+ CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=9.16e-016 RS=34.5 N=3.00 )\r
-\r
-*SRC=AZ23C20;DI_AZ23C20;Diodes;Zener 10V-50V; 20.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C20  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.6\r
-.MODEL DF D ( IS=6.18p RS=29.6 N=1.10\r
-+ CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C22;DI_AZ23C22;Diodes;Zener 10V-50V; 22.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C22  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.5\r
-.MODEL DF D ( IS=5.62p RS=29.3 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C24;DI_AZ23C24;Diodes;Zener 10V-50V; 24.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C24  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.4\r
-.MODEL DF D ( IS=5.15p RS=29.1 N=1.10\r
-+ CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C27;DI_AZ23C27;Diodes;Zener 10V-50V; 27.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C27  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 24.4\r
-.MODEL DF D ( IS=4.58p RS=28.7 N=1.10\r
-+ CJO=20.7p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C2V7;DI_AZ23C2V7;Diodes;Zener <=10V; 2.70V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C2V7  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.263\r
-.MODEL DF D ( IS=45.8p RS=35.3 N=1.10\r
-+ CJO=450p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C30;DI_AZ23C30;Diodes;Zener 10V-50V; 30.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C30  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.4\r
-.MODEL DF D ( IS=4.12p RS=28.4 N=1.10\r
-+ CJO=19.5p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C33;DI_AZ23C33;Diodes;Zener 10V-50V; 33.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C33  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 30.4\r
-.MODEL DF D ( IS=3.75p RS=28.2 N=1.10\r
-+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C36;DI_AZ23C36;Diodes;Zener 10V-50V; 36.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C36  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 33.3\r
-.MODEL DF D ( IS=3.43p RS=27.9 N=1.10\r
-+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C39;DI_AZ23C39;Diodes;Zener 10V-50V; 39.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C39  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.3\r
-.MODEL DF D ( IS=3.17p RS=27.7 N=1.10\r
-+ CJO=17.0p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C3V0;DI_AZ23C3V0;Diodes;Zener <=10V; 3.00V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C3V0  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.495\r
-.MODEL DF D ( IS=41.2p RS=35.0 N=1.10\r
-+ CJO=417p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C3V3;DI_AZ23C3V3;Diodes;Zener <=10V; 3.30V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C3V3  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.787\r
-.MODEL DF D ( IS=37.5p RS=34.7 N=1.10\r
-+ CJO=397p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C3V6;DI_AZ23C3V6;Diodes;Zener <=10V; 3.60V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C3V6 1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.08\r
-.MODEL DF D ( IS=34.3p RS=34.5 N=1.10\r
-+ CJO=384p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C3V9;DI_AZ23C3V9;Diodes;Zener <=10V; 3.60V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C3V9  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.08\r
-.MODEL DF D ( IS=34.3p RS=34.5 N=1.10\r
-+ CJO=370p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C43;DI_AZ23C43;Diodes;Zener 10V-50V; 43.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C43  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 40.3\r
-.MODEL DF D ( IS=2.87p RS=27.4 N=1.10\r
-+ CJO=16.7p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C47;DI_AZ23C47;Diodes;Zener 10V-50V; 47.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C47  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 44.3\r
-.MODEL DF D ( IS=2.63p RS=27.2 N=1.10\r
-+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C4V3;DI_AZ23C4V3;Diodes;Zener <=10V; 4.30V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C4V3  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.77\r
-.MODEL DF D ( IS=28.7p RS=34.0 N=1.10\r
-+ CJO=357p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C4V7;DI_AZ23C4V7;Diodes;Zener <=10V; 4.70V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C4V7  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.24\r
-.MODEL DF D ( IS=26.3p RS=33.7 N=1.10\r
-+ CJO=350p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C51;DI_AZ23C51;Diodes;Zener >50V; 51.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C51  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 48.2\r
-.MODEL DF D ( IS=2.42p RS=26.9 N=1.10\r
-+ CJO=16.2p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C5V1;DI_AZ23C5V1;Diodes;Zener <=10V; 5.10V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C5V1  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.73\r
-.MODEL DF D ( IS=24.2p RS=33.5 N=1.10\r
-+ CJO=132p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C5V6;DI_AZ23C5V6;Diodes;Zener <=10V; 5.60V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C5V6  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.32\r
-.MODEL DF D ( IS=22.1p RS=33.2 N=1.10\r
-+ CJO=102p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C5V6W;DI_AZ23C5V6W;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C5V6W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.29\r
-.MODEL DF D ( IS=14.7p RS=32.1 N=1.10\r
-+ CJO=102p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.94f RS=24.5 N=3.00 )\r
-\r
-*SRC=AZ23C6V2;DI_AZ23C6V2;Diodes;Zener <=10V; 6.20V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C6V2  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.12\r
-.MODEL DF D ( IS=19.9p RS=32.9 N=1.10\r
-+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C6V8;DI_AZ23C6V8;Diodes;Zener <=10V; 6.80V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C6V8  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.93\r
-.MODEL DF D ( IS=18.2p RS=32.7 N=1.10\r
-+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C6V8W;DI_AZ23C6V8W;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C6V8W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.15\r
-.MODEL DF D ( IS=12.1p RS=31.5 N=1.10\r
-+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.42f RS=3.45 N=2.23 )\r
-\r
-*SRC=AZ23C7V5;DI_AZ23C7V5;Diodes;Zener <=10V; 7.50V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C7V5  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.74\r
-.MODEL DF D ( IS=16.5p RS=32.4 N=1.10\r
-+ CJO=59.5p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C8V2;DI_AZ23C8V2;Diodes;Zener <=10V; 8.20V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C8V2  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.43\r
-.MODEL DF D ( IS=15.1p RS=32.1 N=1.10\r
-+ CJO=54.2p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=AZ23C9V1;DI_AZ23C9V1;Diodes;Zener <=10V; 9.10V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_AZ23C9V1  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.00\r
-.MODEL DF D ( IS=13.6p RS=31.8 N=1.10\r
-+ CJO=48.9p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C10;DI_BZT52C10;Diodes;Zener <=10V; 10.0V  0.500W   Diodes Inc. Zener \r
-*SYM=HZEN \r
-.SUBCKT DI_BZT52C10  1 2 \r
-*        Terminals    A   K \r
-D1 1 2 DF \r
-DZ 3 1 DR \r
-VZ 2 3 7.84 \r
-.MODEL DF D ( IS=20.6p RS=1.22 N=1.10 \r
-+ CJO=45.6p VJ=0.750 M=0.330 TT=50.1n ) \r
-.MODEL DR D ( IS=4.12f RS=4.60 N=2.97 ) \r
-.ENDS\r
-\r
-*SRC=BZT52C10S;DI_BZT52C10S;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C10S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.76\r
-.MODEL DF D ( IS=8.24p RS=30.4 N=1.10\r
-+ CJO=47.6p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C11;DI_BZT52C11;Diodes;Zener 10V-50V; 11.0V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C11  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 8.83\r.MODEL DF D ( IS=18.7p RS=32.7 N=1.10\r+ CJO=44.0p VJ=1.00 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=3.75f RS=4.60 N=2.97\r
-\r
-*SRC=BZT52C11S;DI_BZT52C11S;Diodes;Zener 10V-50V; 11.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C11S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.76\r
-.MODEL DF D ( IS=7.49p RS=30.1 N=1.10\r
-+ CJO=44.0p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C12;DI_BZT52C12;Diodes;Zener 10V-50V; 12.0V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C12  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 9.78\r.MODEL DF D ( IS=17.2p RS=32.5 N=1.10\r+ CJO=42.7p VJ=1.00 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=3.43f RS=9.46 N=3.00\r
-\r
-*SRC=BZT52C12S;DI_BZT52C12S;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C12S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.71\r
-.MODEL DF D ( IS=6.87p RS=29.9 N=1.10\r
-+ CJO=42.7p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C13;DI_BZT52C13;Diodes;Zener 10V-50V; 13.0V  0.500W   Diodes Inc. Zener \r
-*SYM=HZEN \r
-.SUBCKT DI_BZT52C13  1 2 \r
-*        Terminals    A   K \r
-D1 1 2 DF \r
-DZ 3 1 DR \r
-VZ 2 3 12.4 \r
-.MODEL DF D ( IS=15.8p RS=1.24 N=1.10 \r
-+ CJO=51.5p VJ=1.00 M=0.330 TT=50.1n ) \r
-.MODEL DR D ( IS=3.17f RS=1.26 N=0.814 ) \r
-.ENDS\r
-\r
-*SRC=BZT52C13S;DI_BZT52C13S;Diodes;Zener 10V-50V; 13.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C13S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 10.7\r
-.MODEL DF D ( IS=6.34p RS=29.7 N=1.10\r
-+ CJO=25.8p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C15;DI_BZT52C15;Diodes;Zener 10V-50V; 15.0V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C15  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 12.7\r.MODEL DF D ( IS=13.7p RS=31.9 N=1.10\r+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=2.75f RS=14.5 N=3.00\r
-\r
-*SRC=BZT52C15S;DI_BZT52C15S;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C15S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.7\r
-.MODEL DF D ( IS=5.49p RS=29.3 N=1.10\r
-+ CJO=25.5p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C16;DI_BZT52C16;Diodes;Zener 10V-50V; 16.0V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C16  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 13.7\r.MODEL DF D ( IS=12.9p RS=31.7 N=1.10\r+ CJO=31.4p VJ=1.00 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=2.58f RS=24.5 N=3.00\r
-\r
-*SRC=BZT52C16S;DI_BZT52C16S;Diodes;Zener 10V-50V; 16.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C16S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 13.6\r
-.MODEL DF D ( IS=5.15p RS=29.1 N=1.10\r
-+ CJO=25.4p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C18;DI_BZT52C18;Diodes;Zener 10V-50V; 18.0V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C18  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 15.6\r.MODEL DF D ( IS=11.4p RS=31.3 N=1.10\r+ CJO=27.7p VJ=1.00 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=2.29f RS=29.5 N=3.00\r
-\r
-**********************************************************************************************************************************\r
-*SRC=BZT52C18S;DI_BZT52C18S;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C18S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.6\r
-.MODEL DF D ( IS=4.58p RS=28.7 N=1.10\r
-+ CJO=25.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 )\r
-.ENDS\r
-*********************************************************************************************************************************\r
-\r
-*SRC=BZT52C20;DI_BZT52C20;Diodes;Zener 10V-50V; 20.0V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C20  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 17.6\r.MODEL DF D ( IS=10.3p RS=31.0 N=1.10\r+ CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=2.06f RS=39.5 N=3.00\r
-\r
-*SRC=BZT52C20S;DI_BZT52C20S;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C20S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.5\r
-.MODEL DF D ( IS=4.12p RS=28.4 N=1.10\r
-+ CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C22;DI_BZT52C22;Diodes;Zener 10V-50V; 22.0V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C22  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 19.6\r.MODEL DF D ( IS=9.36p RS=30.8 N=1.10\r+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=1.87f RS=39.5 N=3.00\r
-\r
-*SRC=BZT52C22S;DI_BZT52C22S;Diodes;Zener 10V-50V; 22.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C22S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.5\r
-.MODEL DF D ( IS=3.75p RS=28.2 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C24;DI_BZT52C24;Diodes;Zener 10V-50V; 24.0V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C24  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 21.5\r.MODEL DF D ( IS=8.58p RS=30.5 N=1.10\r+ CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=1.72f RS=54.5 N=3.00\r
-\r
-*SRC=BZT52C24S;DI_BZT52C24S;Diodes;Zener 10V-50V; 24.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C24S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.4\r
-.MODEL DF D ( IS=3.43p RS=27.9 N=1.10\r
-+ CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C27;DI_BZT52C27;Diodes;Zener 10V-50V; 27.0V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C27  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 24.7\r.MODEL DF D ( IS=7.63p RS=30.2 N=1.10\r+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=1.53f RS=41.1 N=3.00\r
-\r
-*SRC=BZT52C27S;DI_BZT52C27S;Diodes;Zener 10V-50V; 27.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C27S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 24.7\r
-.MODEL DF D ( IS=3.05p RS=27.6 N=1.10\r
-+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C2V0;DI_BZT52C2V0;Diodes;Zener <=10V; 2.00V  0.500W   Diodes Inc.\r*SYM=HZEN\r.SUBCKT DI_BZT52C2V0  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 0\r.MODEL DF D ( IS=103p RS=37.6 N=1.10\r+ CJO=516p VJ=0.750 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=20.6f RS=84.5 N=3.00\r
-\r
-*SRC=BZT52C2V0S;DI_BZT52C2V0S;Diodes;Zener <=10V; 2.00V  0.200W   Diodes Inc. 200 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C2V0S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0\r
-.MODEL DF D ( IS=41.2p RS=35.0 N=1.10\r
-+ CJO=503p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C2V4;DI_BZT52C2V4;Diodes;Zener <=10V; 2.40V  0.500W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C2V4  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0\r
-.MODEL DF D ( IS=85.8p RS=37.1 N=1.10\r
-+ CJO=461p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=17.2f RS=84.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZT52C2V4S;DI_BZT52C2V4S;Diodes;Zener <=10V; 2.40V  0.200W   Diodes Inc. 200 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C2V4S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0\r
-.MODEL DF D ( IS=34.3p RS=34.5 N=1.10\r
-+ CJO=460p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C2V7;DI_BZT52C2V7;Diodes;Zener <=10V; 2.70V  0.500W   Diodes Inc. -\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C2V7  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.217\r
-.MODEL DF D ( IS=76.3p RS=36.7 N=1.10\r
-+ CJO=461p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=15.3f RS=84.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZT52C2V7S;DI_BZT52C2V7S;Diodes;Zener <=10V; 2.70V  0.200W   Diodes Inc. 200 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C2V7S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.146\r
-.MODEL DF D ( IS=30.5p RS=34.1 N=1.10\r
-+ CJO=410p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C30;DI_BZT52C30;Diodes;Zener 10V-50V; 30.0V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C30  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 27.7\r.MODEL DF D ( IS=6.87p RS=29.9 N=1.10\r+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=1.37f RS=41.1 N=3.00\r
-\r
-*SRC=BZT52C30S;DI_BZT52C30S;Diodes;Zener 10V-50V; 30.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C30S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.7\r
-.MODEL DF D ( IS=2.75p RS=27.3 N=1.10\r
-+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C33;DI_BZT52C33;Diodes;Zener 10V-50V; 33.0V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C33  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 30.7\r.MODEL DF D ( IS=6.24p RS=29.6 N=1.10\r+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=1.25f RS=41.1 N=3.00\r
-\r
-*SRC=BZT52C33S;DI_BZT52C33S;Diodes;Zener 10V-50V; 33.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C33S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 30.7\r
-.MODEL DF D ( IS=2.50p RS=27.0 N=1.10\r
-+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C36;DI_BZT52C36;Diodes;Zener 10V-50V; 36.0V  0.500W   Diodes Inc. Zener \r
-*SYM=HZEN \r
-.SUBCKT DI_BZT52C36  1 2 \r
-*        Terminals    A   K \r
-D1 1 2 DF \r
-DZ 3 1 DR \r
-VZ 2 3 33.7 \r
-.MODEL DF D ( IS=5.72p RS=1.27 N=1.10 \r
-+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) \r
-.MODEL DR D ( IS=1.14f RS=51.1 N=3.00 ) \r
-.ENDS\r
-\r
-*SRC=BZT52C36S;DI_BZT52C36S;Diodes;Zener 10V-50V; 36.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C36S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 33.7\r
-.MODEL DF D ( IS=2.29p RS=26.8 N=1.10\r
-+ CJO=17.3p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C39;DI_BZT52C39;Diodes;Zener 10V-50V; 39.0V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C39  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 36.6\r.MODEL DF D ( IS=5.28p RS=29.1 N=1.10\r+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=1.06f RS=91.1 N=3.00\r
-\r
-*SRC=BZT52C39S;DI_BZT52C39S;Diodes;Zener 10V-50V; 39.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C39S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.5\r
-.MODEL DF D ( IS=2.11p RS=26.5 N=1.10\r
-+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C3V0;DI_BZT52C3V0;Diodes;Zener <=10V; 3.00V  0.500W   Diodes Inc. -\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C3V0  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.534\r
-.MODEL DF D ( IS=68.7p RS=36.4 N=1.10\r
-+ CJO=384p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=13.7f RS=79.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZT52C3V0S;DI_BZT52C3V0S;Diodes;Zener <=10V; 3.00V  0.200W   Diodes Inc. 200 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C3V0S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.463\r
-.MODEL DF D ( IS=27.5p RS=33.8 N=1.10\r
-+ CJO=403p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C3V3;DI_BZT52C3V3;Diodes;Zener <=10V; 3.30V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C3V3  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 0.827\r.MODEL DF D ( IS=62.4p RS=36.2 N=1.10\r+ CJO=403p VJ=0.750 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=12.5f RS=79.5 N=3.00\r
-\r
-*SRC=BZT52C3V3S;DI_BZT52C3V3S;Diodes;Zener <=10V; 3.30V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C3V3S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.756\r
-.MODEL DF D ( IS=25.0p RS=33.6 N=1.10\r
-+ CJO=403p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C3V6;DI_BZT52C3V6;Diodes;Zener <=10V; 3.60V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C3V6  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 1.15\r.MODEL DF D ( IS=57.2p RS=35.9 N=1.10\r+ CJO=390p VJ=0.750 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=11.4f RS=74.5 N=3.00\r
-\r
-*SRC=BZT52C3V6S;DI_BZT52C3V6S;Diodes;Zener <=10V; 3.60V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C3V6S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.07\r
-.MODEL DF D ( IS=22.9p RS=33.3 N=1.10\r
-+ CJO=390p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C3V9;DI_BZT52C3V9;Diodes;Zener <=10V; 3.90V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C3V9  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 1.44\r.MODEL DF D ( IS=52.8p RS=35.7 N=1.10\r+ CJO=384p VJ=0.750 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=10.6f RS=74.5 N=3.00\r
-\r
-********************************************************************************************************************************\r
-*SRC=BZT52C3V9S;DI_BZT52C3V9S;Diodes;Zener <=10V; 3.90V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C3V9S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.37\r
-.MODEL DF D ( IS=21.1p RS=33.1 N=1.10\r
-+ CJO=384p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.23f RS=74.5 N=3.00 )\r
-.ENDS\r
-********************************************************************************************************************************\r
-\r
-*SRC=BZT52C43;DI_BZT52C43;Diodes;Zener 10V-50V; 43.0V  0.410W   Diodes Inc. Zener \r
-*SYM=HZEN \r
-.SUBCKT DI_BZT52C43  1 2 \r
-*        Terminals    A   K \r
-D1 1 2 DF \r
-DZ 3 1 DR \r
-VZ 2 3 40.3 \r
-.MODEL DF D ( IS=3.93p RS=1.51 N=1.10 \r
-+ CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) \r
-.MODEL DR D ( IS=7.86e-016 RS=84.5 N=3.00 ) \r
-.ENDS\r
-\r
-*SRC=BZT52C47;DI_BZT52C47;Diodes;Zener 10V-50V; 47.0V  0.410W   Diodes Inc. Zener \r
-*SYM=HZEN \r
-.SUBCKT DI_BZT52C47  1 2 \r
-*        Terminals    A   K \r
-D1 1 2 DF \r
-DZ 3 1 DR \r
-VZ 2 3 44.3 \r
-.MODEL DF D ( IS=3.59p RS=1.48 N=1.10 \r
-+ CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) \r
-.MODEL DR D ( IS=7.19e-016 RS=84.5 N=3.00 ) \r
-.ENDS\r
-\r
-*SRC=BZT52C4V3;DI_BZT52C4V3;Diodes;Zener <=10V; 4.30V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C4V3  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 1.83\r.MODEL DF D ( IS=47.9p RS=35.4 N=1.10\r+ CJO=370p VJ=0.750 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=9.58f RS=74.5 N=3.00\r
-\r
-*SRC=BZT52C4V3S;DI_BZT52C4V3S;Diodes;Zener <=10V; 4.30V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C4V3S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.76\r
-.MODEL DF D ( IS=19.2p RS=32.8 N=1.10\r
-+ CJO=370p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C4V7;DI_BZT52C4V7;Diodes;Zener <=10V; 4.70V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C4V7  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 2.27\r.MODEL DF D ( IS=43.8p RS=35.2 N=1.10\r+ CJO=357p VJ=0.750 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=8.77f RS=64.5 N=3.00\r
-\r
-*SRC=BZT52C4V7S;DI_BZT52C4V7S;Diodes;Zener <=10V; 4.70V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C4V7S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.20\r
-.MODEL DF D ( IS=17.5p RS=32.6 N=1.10\r
-+ CJO=357p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C51;DI_BZT52C51;Diodes;Zener >50V; 51.0V  0.410W   Diodes Inc. Zener \r
-*SYM=HZEN \r
-.SUBCKT DI_BZT52C51  1 2 \r
-*        Terminals    A   K \r
-D1 1 2 DF \r
-DZ 3 1 DR \r
-VZ 2 3 48.3 \r
-.MODEL DF D ( IS=3.31p RS=1.45 N=1.10 \r
-+ CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) \r
-.MODEL DR D ( IS=6.62e-016 RS=84.5 N=3.00 ) \r
-.ENDS\r
-\r
-*SRC=BZT52C5V1;DI_BZT52C5V1;Diodes;Zener <=10V; 5.10V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C5V1  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 2.77\r.MODEL DF D ( IS=40.4p RS=34.9 N=1.10\r+ CJO=145p VJ=0.750 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=8.08f RS=44.5 N=3.00\r
-\r
-*SRC=BZT52C5V1S;DI_BZT52C5V1S;Diodes;Zener <=10V; 5.10V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C5V1S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.70\r
-.MODEL DF D ( IS=16.2p RS=32.3 N=1.10\r
-+ CJO=145p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C5V6;DI_BZT52C5V6;Diodes;Zener <=10V; 5.60V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C5V6  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 3.36\r.MODEL DF D ( IS=36.8p RS=34.7 N=1.10\r+ CJO=99.2p VJ=0.750 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=7.36f RS=24.5 N=3.00\r
-\r
-*SRC=BZT52C5V6S;DI_BZT52C5V6S;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C5V6S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.29\r
-.MODEL DF D ( IS=14.7p RS=32.1 N=1.10\r
-+ CJO=99.2p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C6V2;DI_BZT52C6V2;Diodes;Zener <=10V; 6.20V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C6V2  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 5.14\r.MODEL DF D ( IS=33.2p RS=34.4 N=1.10\r+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=6.65f RS=2.30 N=1.49\r
-\r
-*SRC=BZT52C6V2S;DI_BZT52C6V2S;Diodes;Zener <=10V; 6.20V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C6V2S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.10\r
-.MODEL DF D ( IS=13.3p RS=31.8 N=1.10\r
-+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C6V8;DI_BZT52C6V8;Diodes;Zener <=10V; 6.80V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C6V8  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 5.20\r.MODEL DF D ( IS=30.3p RS=34.1 N=1.10\r+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=6.06f RS=3.45 N=2.23\r
-\r
-*SRC=BZT52C6V8S;DI_BZT52C6V8S;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C6V8S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.15\r
-.MODEL DF D ( IS=12.1p RS=31.5 N=1.10\r
-+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C7V5;DI_BZT52C7V5;Diodes;Zener <=10V; 7.50V  0.500W   Diodes Inc.\r-\r*SYM=HZEN\r.SUBCKT DI_BZT52C7V5  1 2\r*        Terminals    A   K\rD1 1 2 DF\rDZ 3 1 DR\rVZ 2 3 5.89\r.MODEL DF D ( IS=27.5p RS=33.8 N=1.10\r+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )\r.MODEL DR D ( IS=5.49f RS=3.45 N=2.23\r
-\r
-*SRC=BZT52C7V5S;DI_BZT52C7V5S;Diodes;Zener <=10V; 7.50V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C7V5S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.84\r
-.MODEL DF D ( IS=11.0p RS=31.2 N=1.10\r
-+ CJO=54.2p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C8V2;DI_BZT52C8V2;Diodes;Zener <=10V; 8.20V  0.500W   Diodes Inc. -\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C8V2  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.59\r
-.MODEL DF D ( IS=25.1p RS=33.6 N=1.10\r
-+ CJO=38.4p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.02f RS=3.45 N=2.23 )\r
-.ENDS\r
-\r
-*SRC=BZT52C8V2S;DI_BZT52C8V2S;Diodes;Zener <=10V; 8.20V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C8V2S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.53\r
-.MODEL DF D ( IS=10.0p RS=31.0 N=1.10\r
-+ CJO=51.6p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZT52C9V1;DI_BZT52C9V1;Diodes;Zener <=10V; 9.10V  0.500W   Diodes Inc. -\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C9V1  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.48\r
-.MODEL DF D ( IS=22.6p RS=33.3 N=1.10\r
-+ CJO=35.3p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.53f RS=3.45 N=2.23 )\r
-.ENDS\r
-\r
-*SRC=BZT52C9V1S;DI_BZT52C9V1S;Diodes;Zener <=10V; 9.10V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZT52C9V1S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.43\r
-.MODEL DF D ( IS=9.05p RS=30.7 N=1.10\r
-+ CJO=48.9p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C10;DI_BZX84C10;Diodes;Zener <=10V; 10.0V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C10  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.81\r
-.MODEL DF D ( IS=14.4p RS=32.0 N=1.10\r
-+ CJO=24.1p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.88f RS=4.60 N=2.97 )\r
-.ENDS\r
-\r
-*SRC=BZX84C10S;DI_BZX84C10S;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C10S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.76\r
-.MODEL DF D ( IS=8.24p RS=30.4 N=1.10\r
-+ CJO=24.1p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C10T;DI_BZX84C10T;Diodes;Zener <=10V; 10.0V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C10T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.74\r
-.MODEL DF D ( IS=6.18p RS=29.6 N=1.10\r
-+ CJO=24.1p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C10TS;DI_BZX84C10TS;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C10TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.76\r
-.MODEL DF D ( IS=8.24p RS=30.4 N=1.10\r
-+ CJO=24.1p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C10W;DI_BZX84C10W;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C10W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.76\r
-.MODEL DF D ( IS=8.24p RS=30.4 N=1.10\r
-+ CJO=24.1p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C11;DI_BZX84C11;Diodes;Zener 10V-50V; 11.0V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C11  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.80\r
-.MODEL DF D ( IS=13.1p RS=31.7 N=1.10\r
-+ CJO=45.2p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.62f RS=4.60 N=2.97 )\r
-.ENDS\r
-\r
-*SRC=BZX84C11S;DI_BZX84C11S;Diodes;Zener 10V-50V; 11.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C11S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.76\r
-.MODEL DF D ( IS=7.49p RS=30.1 N=1.10\r
-+ CJO=45.1p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C11T;DI_BZX84C11T;Diodes;Zener 10V-50V; 11.0V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C11T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.74\r
-.MODEL DF D ( IS=5.62p RS=29.3 N=1.10\r
-+ CJO=45.1p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C11TS;DI_BZX84C11TS;Diodes;Zener 10V-50V; 11.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C11TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.76\r
-.MODEL DF D ( IS=7.49p RS=30.1 N=1.10\r
-+ CJO=45.1p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C11W;DI_BZX84C11W;Diodes;Zener 10V-50V; 11.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C11W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.76\r
-.MODEL DF D ( IS=7.49p RS=30.1 N=1.10\r
-+ CJO=45.1p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C12;DI_BZX84C12;Diodes;Zener 10V-50V; 12.0V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C12  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.75\r
-.MODEL DF D ( IS=12.0p RS=31.5 N=1.10\r
-+ CJO=42.7p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.40f RS=9.46 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C12S;DI_BZX84C12S;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C12S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.71\r
-.MODEL DF D ( IS=6.87p RS=29.9 N=1.10\r
-+ CJO=42.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C12T;DI_BZX84C12T;Diodes;Zener 10V-50V; 12.0V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C12T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.68\r
-.MODEL DF D ( IS=5.15p RS=29.1 N=1.10\r
-+ CJO=42.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C12TS;DI_BZX84C12TS;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C12TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.71\r
-.MODEL DF D ( IS=6.87p RS=29.9 N=1.10\r
-+ CJO=42.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C12W;DI_BZX84C12W;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C12W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.71\r
-.MODEL DF D ( IS=6.87p RS=29.9 N=1.10\r
-+ CJO=42.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C13;DI_BZX84C13;Diodes;Zener 10V-50V; 13.0V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C13  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 10.7\r
-.MODEL DF D ( IS=11.1p RS=31.3 N=1.10\r
-+ CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.22f RS=14.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C13S;DI_BZX84C13S;Diodes;Zener 10V-50V; 13.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C13S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 10.7\r
-.MODEL DF D ( IS=6.34p RS=29.7 N=1.10\r
-+ CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C13T;DI_BZX84C13T;Diodes;Zener 10V-50V; 13.0V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C13T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 10.7\r
-.MODEL DF D ( IS=4.75p RS=28.8 N=1.10\r
-+ CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C13TS;DI_BZX84C13TS;Diodes;Zener 10V-50V; 13.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C13TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 10.7\r
-.MODEL DF D ( IS=6.34p RS=29.7 N=1.10\r
-+ CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C13W;DI_BZX84C13W;Diodes;Zener 10V-50V; 13.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C13W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 10.7\r
-.MODEL DF D ( IS=6.34p RS=29.7 N=1.10\r
-+ CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C15;DI_BZX84C15;Diodes;Zener 10V-50V; 15.0V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C15  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.7\r
-.MODEL DF D ( IS=9.61p RS=30.8 N=1.10\r
-+ CJO=37.2p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.92f RS=14.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C15S;DI_BZX84C15S;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C15S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.7\r
-.MODEL DF D ( IS=5.49p RS=29.3 N=1.10\r
-+ CJO=37.2p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C15T;DI_BZX84C15T;Diodes;Zener 10V-50V; 15.0V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C15T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.6\r
-.MODEL DF D ( IS=4.12p RS=28.4 N=1.10\r
-+ CJO=37.2p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C15TS;DI_BZX84C15TS;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C15TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.7\r
-.MODEL DF D ( IS=5.49p RS=29.3 N=1.10\r
-+ CJO=37.2p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C15W;DI_BZX84C15W;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C15W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.7\r
-.MODEL DF D ( IS=5.49p RS=29.3 N=1.10\r
-+ CJO=37.2p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C16;DI_BZX84C16;Diodes;Zener 10V-50V; 16.0V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C16  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 13.7\r
-.MODEL DF D ( IS=9.01p RS=30.7 N=1.10\r
-+ CJO=35.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.80f RS=24.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C16S;DI_BZX84C16S;Diodes;Zener 10V-50V; 16.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C16S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 13.6\r
-.MODEL DF D ( IS=5.15p RS=29.1 N=1.10\r
-+ CJO=35.8p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C16T;DI_BZX84C16T;Diodes;Zener 10V-50V; 16.0V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C16T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 13.6\r
-.MODEL DF D ( IS=3.86p RS=28.2 N=1.10\r
-+ CJO=35.8p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C16TS;DI_BZX84C16TS;Diodes;Zener 10V-50V; 16.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C16TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 13.6\r
-.MODEL DF D ( IS=5.15p RS=29.1 N=1.10\r
-+ CJO=35.8p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C16W;DI_BZX84C16W;Diodes;Zener 10V-50V; 16.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C16W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 13.6\r
-.MODEL DF D ( IS=5.15p RS=29.1 N=1.10\r
-+ CJO=35.8p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C18;DI_BZX84C18;Diodes;Zener 10V-50V; 18.0V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C18  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.6\r
-.MODEL DF D ( IS=8.01p RS=30.3 N=1.10\r
-+ CJO=33.5p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.60f RS=29.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C18S;DI_BZX84C18S;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C18S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.6\r
-.MODEL DF D ( IS=4.58p RS=28.7 N=1.10\r
-+ CJO=33.4p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C18T;DI_BZX84C18T;Diodes;Zener 10V-50V; 18.0V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C18T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.6\r
-.MODEL DF D ( IS=3.43p RS=27.9 N=1.10\r
-+ CJO=33.4p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C18TS;DI_BZX84C18TS;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C18TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.6\r
-.MODEL DF D ( IS=4.58p RS=28.7 N=1.10\r
-+ CJO=33.4p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C18W;DI_BZX84C18W;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C18W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.6\r
-.MODEL DF D ( IS=4.58p RS=28.7 N=1.10\r
-+ CJO=33.4p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C20;DI_BZX84C20;Diodes;Zener 10V-50V; 20.0V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C20  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.6\r
-.MODEL DF D ( IS=7.21p RS=30.0 N=1.10\r
-+ CJO=31.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.44f RS=39.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C20S;DI_BZX84C20S;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C20S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.5\r
-.MODEL DF D ( IS=4.12p RS=28.4 N=1.10\r
-+ CJO=31.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C20T;DI_BZX84C20T;Diodes;Zener 10V-50V; 20.0V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C20T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.5\r
-.MODEL DF D ( IS=3.09p RS=27.6 N=1.10\r
-+ CJO=31.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C20TS;DI_BZX84C20TS;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C20TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.5\r
-.MODEL DF D ( IS=4.12p RS=28.4 N=1.10\r
-+ CJO=31.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C20W;DI_BZX84C20W;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C20W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.5\r
-.MODEL DF D ( IS=4.12p RS=28.4 N=1.10\r
-+ CJO=31.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C22;DI_BZX84C22;Diodes;Zener 10V-50V; 22.0V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C22  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.6\r
-.MODEL DF D ( IS=6.55p RS=29.8 N=1.10\r
-+ CJO=30.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.31f RS=39.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C22S;DI_BZX84C22S;Diodes;Zener 10V-50V; 22.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C22S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.5\r
-.MODEL DF D ( IS=3.75p RS=28.2 N=1.10\r
-+ CJO=30.0p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C22T;DI_BZX84C22T;Diodes;Zener 10V-50V; 22.0V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C22T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.5\r
-.MODEL DF D ( IS=2.81p RS=27.3 N=1.10\r
-+ CJO=30.0p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C22TS;DI_BZX84C22TS;Diodes;Zener 10V-50V; 22.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C22TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.5\r
-.MODEL DF D ( IS=3.75p RS=28.2 N=1.10\r
-+ CJO=30.0p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C22W;DI_BZX84C22W;Diodes;Zener 10V-50V; 22.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C22W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.5\r
-.MODEL DF D ( IS=3.75p RS=28.2 N=1.10\r
-+ CJO=30.0p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C24;DI_BZX84C24;Diodes;Zener 10V-50V; 24.0V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C24  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.5\r
-.MODEL DF D ( IS=6.01p RS=29.5 N=1.10\r
-+ CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.20f RS=54.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C24S;DI_BZX84C24S;Diodes;Zener 10V-50V; 24.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C24S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.4\r
-.MODEL DF D ( IS=3.43p RS=27.9 N=1.10\r
-+ CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C24T;DI_BZX84C24T;Diodes;Zener 10V-50V; 24.0V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C24T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.4\r
-.MODEL DF D ( IS=2.57p RS=27.1 N=1.10\r
-+ CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C24TS;DI_BZX84C24TS;Diodes;Zener 10V-50V; 24.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C24TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.4\r
-.MODEL DF D ( IS=3.43p RS=27.9 N=1.10\r
-+ CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C24W;DI_BZX84C24W;Diodes;Zener 10V-50V; 24.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C24W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.4\r
-.MODEL DF D ( IS=3.43p RS=27.9 N=1.10\r
-+ CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C27;DI_BZX84C27;Diodes;Zener 10V-50V; 27.0V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C27  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 24.4\r
-.MODEL DF D ( IS=5.34p RS=29.2 N=1.10\r
-+ CJO=27.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.07f RS=64.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C27S;DI_BZX84C27S;Diodes;Zener 10V-50V; 27.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C27S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 24.7\r
-.MODEL DF D ( IS=3.05p RS=27.6 N=1.10\r
-+ CJO=27.3p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C27T;DI_BZX84C27T;Diodes;Zener 10V-50V; 27.0V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C27T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 24.7\r
-.MODEL DF D ( IS=2.29p RS=26.8 N=1.10\r
-+ CJO=27.3p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C27TS;DI_BZX84C27TS;Diodes;Zener 10V-50V; 27.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C27TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 24.7\r
-.MODEL DF D ( IS=3.05p RS=27.6 N=1.10\r
-+ CJO=27.3p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C27W;DI_BZX84C27W;Diodes;Zener 10V-50V; 27.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C27W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 24.7\r
-.MODEL DF D ( IS=3.05p RS=27.6 N=1.10\r
-+ CJO=27.3p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C2V4;DI_BZX84C2V4;Diodes;Zener <=10V; 2.40V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C2V4  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0\r
-.MODEL DF D ( IS=60.1p RS=36.1 N=1.10\r
-+ CJO=205p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=12.0f RS=84.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C2V4S;DI_BZX84C2V4S;Diodes;Zener <=10V; 2.40V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C2V4S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0\r
-.MODEL DF D ( IS=34.3p RS=34.5 N=1.10\r
-+ CJO=205p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C2V4T;DI_BZX84C2V4T;Diodes;Zener <=10V; 2.40V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C2V4T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0\r
-.MODEL DF D ( IS=25.7p RS=33.7 N=1.10\r
-+ CJO=205p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C2V4TS;DI_BZX84C2V4TS;Diodes;Zener <=10V; 2.40V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C2V4TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0\r
-.MODEL DF D ( IS=34.3p RS=34.5 N=1.10\r
-+ CJO=205p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C2V4W;DI_BZX84C2V4W;Diodes;Zener <=10V; 2.40V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C2V4W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0\r
-.MODEL DF D ( IS=34.3p RS=34.5 N=1.10\r
-+ CJO=205p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C2V7;DI_BZX84C2V7;Diodes;Zener <=10V; 2.70V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C2V7  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.190\r
-.MODEL DF D ( IS=53.4p RS=35.7 N=1.10\r
-+ CJO=172p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=10.7f RS=84.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C2V7S;DI_BZX84C2V7S;Diodes;Zener <=10V; 2.70V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C2V7S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.146\r
-.MODEL DF D ( IS=30.5p RS=34.1 N=1.10\r
-+ CJO=172p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C2V7T;DI_BZX84C2V7T;Diodes;Zener <=10V; 2.70V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C2V7T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.124\r
-.MODEL DF D ( IS=22.9p RS=33.3 N=1.10\r
-+ CJO=172p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C2V7TS;DI_BZX84C2V7TS;Diodes;Zener <=10V; 2.70V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C2V7TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.146\r
-.MODEL DF D ( IS=30.5p RS=34.1 N=1.10\r
-+ CJO=172p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C2V7W;DI_BZX84C2V7W;Diodes;Zener <=10V; 2.70V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C2V7W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.146\r
-.MODEL DF D ( IS=30.5p RS=34.1 N=1.10\r
-+ CJO=172p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C30;DI_BZX84C30;Diodes;Zener 10V-50V; 30.0V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C30  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.4\r
-.MODEL DF D ( IS=4.81p RS=28.9 N=1.10\r
-+ CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=9.61e-016 RS=64.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C30S;DI_BZX84C30S;Diodes;Zener 10V-50V; 30.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C30S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.7\r
-.MODEL DF D ( IS=2.75p RS=27.3 N=1.10\r
-+ CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C30T;DI_BZX84C30T;Diodes;Zener 10V-50V; 30.0V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C30T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.6\r
-.MODEL DF D ( IS=2.06p RS=26.5 N=1.10\r
-+ CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C30TS;DI_BZX84C30TS;Diodes;Zener 10V-50V; 30.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C30TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.7\r
-.MODEL DF D ( IS=2.75p RS=27.3 N=1.10\r
-+ CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C30W;DI_BZX84C30W;Diodes;Zener 10V-50V; 30.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C30W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.7\r
-.MODEL DF D ( IS=2.75p RS=27.3 N=1.10\r
-+ CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C33;DI_BZX84C33;Diodes;Zener 10V-50V; 33.0V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C33  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 30.4\r
-.MODEL DF D ( IS=4.37p RS=28.6 N=1.10\r
-+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.74e-016 RS=64.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C33S;DI_BZX84C33S;Diodes;Zener 10V-50V; 33.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C33S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 30.7\r
-.MODEL DF D ( IS=2.50p RS=27.0 N=1.10\r
-+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C33T;DI_BZX84C33T;Diodes;Zener 10V-50V; 33.0V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C33T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 30.6\r
-.MODEL DF D ( IS=1.87p RS=26.2 N=1.10\r
-+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C33TS;DI_BZX84C33TS;Diodes;Zener 10V-50V; 33.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C33TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 30.7\r
-.MODEL DF D ( IS=2.50p RS=27.0 N=1.10\r
-+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C33W;DI_BZX84C33W;Diodes;Zener 10V-50V; 33.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C33W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 30.7\r
-.MODEL DF D ( IS=2.50p RS=27.0 N=1.10\r
-+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C36;DI_BZX84C36;Diodes;Zener 10V-50V; 36.0V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C36  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 33.3\r
-.MODEL DF D ( IS=4.01p RS=28.4 N=1.10\r
-+ CJO=24.2p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.01e-016 RS=74.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C36S;DI_BZX84C36S;Diodes;Zener 10V-50V; 36.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C36S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 33.6\r
-.MODEL DF D ( IS=2.29p RS=26.8 N=1.10\r
-+ CJO=24.2p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C36T;DI_BZX84C36T;Diodes;Zener >50V; 536V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C36T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 533\r
-.MODEL DF D ( IS=115f RS=18.2 N=1.10\r
-+ CJO=24.1p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C36TS;DI_BZX84C36TS;Diodes;Zener 10V-50V; 36.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C36TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 33.6\r
-.MODEL DF D ( IS=2.29p RS=26.8 N=1.10\r
-+ CJO=24.2p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C36W;DI_BZX84C36W;Diodes;Zener 10V-50V; 36.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C36W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 33.6\r
-.MODEL DF D ( IS=2.29p RS=26.8 N=1.10\r
-+ CJO=24.2p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C39;DI_BZX84C39;Diodes;Zener 10V-50V; 39.0V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C39  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.1\r
-.MODEL DF D ( IS=3.70p RS=28.1 N=1.10\r
-+ CJO=23.5p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=7.39e-016 RS=114 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C39S;DI_BZX84C39S;Diodes;Zener 10V-50V; 39.0V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C39S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.5\r
-.MODEL DF D ( IS=2.11p RS=26.5 N=1.10\r
-+ CJO=23.5p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C39T;DI_BZX84C39T;Diodes;Zener 10V-50V; 39.0V  0.150W   Diodes Inc. ZENER\r\r
-*SYM=HZEN\r\r
-.SUBCKT DI_BZX84C39T  1 2\r\r
-*        Terminals    A   K\r\r
-D1 1 2 DF\r\r
-DZ 3 1 DR\r\r
-VZ 2 3 36.5\r\r
-.MODEL DF D ( IS=1.58p RS=25.7 N=1.10\r\r
-+ CJO=23.5p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C39TS;DI_BZX84C39TS;Diodes;Zener 10V-50V; 39.0V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C39TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.5\r
-.MODEL DF D ( IS=2.11p RS=26.5 N=1.10\r
-+ CJO=23.5p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C39W;DI_BZX84C39W;Diodes;Zener 10V-50V; 39.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C39W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.5\r
-.MODEL DF D ( IS=2.11p RS=26.5 N=1.10\r
-+ CJO=23.5p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C3V0;DI_BZX84C3V0;Diodes;Zener <=10V; 3.00V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C3V0  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.507\r
-.MODEL DF D ( IS=48.1p RS=35.4 N=1.10\r
-+ CJO=147p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=9.61f RS=79.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C3V0S;DI_BZX84C3V0S;Diodes;Zener <=10V; 3.00V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C3V0S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.463\r
-.MODEL DF D ( IS=27.5p RS=33.8 N=1.10\r
-+ CJO=147p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C3V0T;DI_BZX84C3V0T;Diodes;Zener <=10V; 3.00V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C3V0T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.441\r
-.MODEL DF D ( IS=20.6p RS=33.0 N=1.10\r
-+ CJO=147p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C3V0TS;DI_BZX84C3V0TS;Diodes;Zener <=10V; 3.00V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C3V0TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.463\r
-.MODEL DF D ( IS=27.5p RS=33.8 N=1.10\r
-+ CJO=147p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C3V0W;DI_BZX84C3V0W;Diodes;Zener <=10V; 3.00V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C3V0W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.463\r
-.MODEL DF D ( IS=27.5p RS=33.8 N=1.10\r
-+ CJO=147p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C3V3;DI_BZX84C3V3;Diodes;Zener <=10V; 3.30V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C3V3  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.799\r
-.MODEL DF D ( IS=43.7p RS=35.2 N=1.10\r
-+ CJO=127p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.74f RS=79.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C3V3S;DI_BZX84C3V3S;Diodes;Zener <=10V; 3.30V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C3V3S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.756\r
-.MODEL DF D ( IS=25.0p RS=33.6 N=1.10\r
-+ CJO=127p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C3V3T;DI_BZX84C3V3T;Diodes;Zener <=10V; 3.30V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C3V3T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.733\r
-.MODEL DF D ( IS=18.7p RS=32.7 N=1.10\r
-+ CJO=127p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C3V3TS;DI_BZX84C3V3TS;Diodes;Zener <=10V; 3.30V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C3V3TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.756\r
-.MODEL DF D ( IS=25.0p RS=33.6 N=1.10\r
-+ CJO=127p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C3V3W;DI_BZX84C3V3W;Diodes;Zener <=10V; 3.30V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C3V3W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.756\r
-.MODEL DF D ( IS=25.0p RS=33.6 N=1.10\r
-+ CJO=127p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C3V6;DI_BZX84C3V6;Diodes;Zener <=10V; 3.60V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C3V6  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.12\r
-.MODEL DF D ( IS=40.1p RS=34.9 N=1.10\r
-+ CJO=112p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.01f RS=74.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C3V6S;DI_BZX84C3V6S;Diodes;Zener <=10V; 3.60V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C3V6S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.07\r
-.MODEL DF D ( IS=22.9p RS=33.3 N=1.10\r
-+ CJO=112p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C3V6T;DI_BZX84C3V6T;Diodes;Zener <=10V; 3.60V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C3V6T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.05\r
-.MODEL DF D ( IS=17.2p RS=32.5 N=1.10\r
-+ CJO=112p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C3V6TS;DI_BZX84C3V6TS;Diodes;Zener <=10V; 3.60V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C3V6TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.07\r
-.MODEL DF D ( IS=22.9p RS=33.3 N=1.10\r
-+ CJO=112p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C3V6W;DI_BZX84C3V6W;Diodes;Zener <=10V; 3.60V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C3V6W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.07\r
-.MODEL DF D ( IS=22.9p RS=33.3 N=1.10\r
-+ CJO=112p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C3V9;DI_BZX84C3V9;Diodes;Zener <=10V; 3.90V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C3V9  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.41\r
-.MODEL DF D ( IS=37.0p RS=34.7 N=1.10\r
-+ CJO=99.1p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=7.39f RS=74.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C3V9S;DI_BZX84C3V9S;Diodes;Zener <=10V; 3.90V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C3V9S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.37\r
-.MODEL DF D ( IS=21.1p RS=33.1 N=1.10\r
-+ CJO=94.1p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C3V9T;DI_BZX84C3V9T;Diodes;Zener <=10V; 3.90V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C3V9T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.35\r
-.MODEL DF D ( IS=15.8p RS=32.3 N=1.10\r
-+ CJO=94.1p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C3V9TS;DI_BZX84C3V9TS;Diodes;Zener <=10V; 3.90V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C3V9TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.37\r
-.MODEL DF D ( IS=21.1p RS=33.1 N=1.10\r
-+ CJO=94.1p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C3V9W;DI_BZX84C3V9W;Diodes;Zener <=10V; 3.90V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C3V9W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.37\r
-.MODEL DF D ( IS=21.1p RS=33.1 N=1.10\r
-+ CJO=94.1p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C43;DI_BZX84C43;Diodes;Zener 10V-50V; 43.0V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C43  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 40.0\r
-.MODEL DF D ( IS=3.35p RS=27.8 N=1.10\r
-+ CJO=22.7p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.71e-016 RS=134 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C47;DI_BZX84C47;Diodes;Zener 10V-50V; 47.0V  0.350W   Diodes Inc. -\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C47  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 43.9\r
-.MODEL DF D ( IS=3.07p RS=27.6 N=1.10\r
-+ CJO=22.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.14e-016 RS=154 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C4V3;DI_BZX84C4V3;Diodes;Zener <=10V; 4.30V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C4V3  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.80\r
-.MODEL DF D ( IS=33.5p RS=34.4 N=1.10\r
-+ CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.71f RS=74.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C4V3S;DI_BZX84C4V3S;Diodes;Zener <=10V; 4.30V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C4V3S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.76\r
-.MODEL DF D ( IS=19.2p RS=32.8 N=1.10\r
-+ CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C4V3T;DI_BZX84C4V3T;Diodes;Zener <=10V; 4.30V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C4V3T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.74\r
-.MODEL DF D ( IS=14.4p RS=32.0 N=1.10\r
-+ CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C4V3TS;DI_BZX84C4V3TS;Diodes;Zener <=10V; 4.30V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C4V3TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.76\r
-.MODEL DF D ( IS=19.2p RS=32.8 N=1.10\r
-+ CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C4V3W;DI_BZX84C4V3W;Diodes;Zener <=10V; 4.30V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C4V3W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.76\r
-.MODEL DF D ( IS=19.2p RS=32.8 N=1.10\r
-+ CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C4V7;DI_BZX84C4V7;Diodes;Zener <=10V; 4.70V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C4V7  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.25\r
-.MODEL DF D ( IS=30.7p RS=34.2 N=1.10\r
-+ CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.14f RS=64.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C4V7S;DI_BZX84C4V7S;Diodes;Zener <=10V; 4.70V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C4V7S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.20\r
-.MODEL DF D ( IS=17.5p RS=32.6 N=1.10\r
-+ CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C4V7T;DI_BZX84C4V7T;Diodes;Zener <=10V; 4.70V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C4V7T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.18\r
-.MODEL DF D ( IS=13.1p RS=31.7 N=1.10\r
-+ CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C4V7TS;DI_BZX84C4V7TS;Diodes;Zener <=10V; 4.70V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C4V7TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.20\r
-.MODEL DF D ( IS=17.5p RS=32.6 N=1.10\r
-+ CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C4V7W;DI_BZX84C4V7W;Diodes;Zener <=10V; 4.70V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C4V7W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.20\r
-.MODEL DF D ( IS=17.5p RS=32.6 N=1.10\r
-+ CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=bzx84c51;DI_BZX84C51;Diodes;Zener >50V; 51.0V  0.350W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C51  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 48.5\r
-.MODEL DF D ( IS=2.83p RS=1.77 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.65e-016 RS=141 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C5V1;DI_BZX84C5V1;Diodes;Zener <=10V; 5.10V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C5V1  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.74\r
-.MODEL DF D ( IS=28.3p RS=33.9 N=1.10\r
-+ CJO=66.2p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.65f RS=44.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C5V1S;DI_BZX84C5V1S;Diodes;Zener <=10V; 5.10V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C5V1S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.70\r
-.MODEL DF D ( IS=16.2p RS=32.3 N=1.10\r
-+ CJO=66.2p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C5V1T;DI_BZX84C5V1T;Diodes;Zener <=10V; 5.10V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C5V1T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.67\r
-.MODEL DF D ( IS=12.1p RS=31.5 N=1.10\r
-+ CJO=66.2p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C5V1TS;DI_BZX84C5V1TS;Diodes;Zener <=10V; 5.10V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C5V1TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.70\r
-.MODEL DF D ( IS=16.2p RS=32.3 N=1.10\r
-+ CJO=66.2p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C5V1W;DI_BZX84C5V1W;Diodes;Zener <=10V; 5.10V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C5V1W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.70\r
-.MODEL DF D ( IS=16.2p RS=32.3 N=1.10\r
-+ CJO=66.2p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C5V6;DI_BZX84C5V6;Diodes;Zener <=10V; 5.60V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C5V6  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.33\r
-.MODEL DF D ( IS=25.7p RS=33.7 N=1.10\r
-+ CJO=57.6p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.15f RS=24.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=BZX84C5V6S;DI_BZX84C5V6S;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C5V6S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.29\r
-.MODEL DF D ( IS=14.7p RS=32.1 N=1.10\r
-+ CJO=57.6p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C5V6T;DI_BZX84C5V6T;Diodes;Zener <=10V; 5.60V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C5V6T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.27\r
-.MODEL DF D ( IS=11.0p RS=31.2 N=1.10\r
-+ CJO=57.6p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C5V6TS;DI_BZX84C5V6TS;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C5V6TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.29\r
-.MODEL DF D ( IS=14.7p RS=32.1 N=1.10\r
-+ CJO=57.6p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C5V6W;DI_BZX84C5V6W;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C5V6W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.29\r
-.MODEL DF D ( IS=14.7p RS=32.1 N=1.10\r
-+ CJO=57.6p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C6V2;DI_BZX84C6V2;Diodes;Zener <=10V; 6.20V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C6V2  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.12\r
-.MODEL DF D ( IS=23.3p RS=33.4 N=1.10\r
-+ CJO=49.4p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.65f RS=2.30 N=1.49 )\r
-.ENDS\r
-\r
-*SRC=BZX84C6V2S;DI_BZX84C6V2S;Diodes;Zener <=10V; 6.20V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C6V2S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.10\r
-.MODEL DF D ( IS=13.3p RS=31.8 N=1.10\r
-+ CJO=49.4p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C6V2T;DI_BZX84C6V2T;Diodes;Zener <=10V; 6.20V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C6V2T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.09\r
-.MODEL DF D ( IS=9.97p RS=31.0 N=1.10\r
-+ CJO=49.4p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C6V2TS;DI_BZX84C6V2TS;Diodes;Zener <=10V; 6.20V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C6V2TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.10\r
-.MODEL DF D ( IS=13.3p RS=31.8 N=1.10\r
-+ CJO=49.4p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C6V2W;DI_BZX84C6V2W;Diodes;Zener <=10V; 6.20V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C6V2W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.10\r
-.MODEL DF D ( IS=13.3p RS=31.8 N=1.10\r
-+ CJO=49.4p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C6V8;DI_BZX84C6V8;Diodes;Zener <=10V; 6.80V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C6V8  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.18\r
-.MODEL DF D ( IS=21.2p RS=33.1 N=1.10\r
-+ CJO=43.0p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.24f RS=3.45 N=2.23 )\r
-.ENDS\r
-\r
-*SRC=BZX84C6V8S;DI_BZX84C6V8S;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C6V8S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.15\r
-.MODEL DF D ( IS=12.1p RS=31.5 N=1.10\r
-+ CJO=43.0p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-SRC=BZX84C6V8T;DI_BZX84C6V8T;Diodes;Zener <=10V; 6.80V  0.150W   Diodes Inc. ZENER\r\r
-*SYM=HZEN\r\r
-.SUBCKT DI_BZX84C6V8T  1 2\r\r
-*        Terminals    A   K\r\r
-D1 1 2 DF\r\r
-DZ 3 1 DR\r\r
-VZ 2 3 5.13\r\r
-.MODEL DF D ( IS=9.09p RS=30.7 N=1.10\r\r
-+ CJO=43.0p VJ=0.750 M=0.330 TT=50.1n )\r\r
-.MODEL DR D ( IS=1.82f RS=3.45 N=2.23 )\r\r
-.ENDS\r
-\r
-*SRC=BZX84C6V8TS;DI_BZX84C6V8TS;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C6V8TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.15\r
-.MODEL DF D ( IS=12.1p RS=31.5 N=1.10\r
-+ CJO=43.0p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C6V8W;DI_BZX84C6V8W;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C6V8W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.15\r
-.MODEL DF D ( IS=12.1p RS=31.5 N=1.10\r
-+ CJO=43.0p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C7V5;DI_C;Diodes;Zener <=10V; 7.50V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C7V5  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.87\r
-.MODEL DF D ( IS=19.2p RS=32.8 N=1.10\r
-+ CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.85f RS=3.45 N=2.23 )\r
-.ENDS\r
-\r
-*SRC=BZX84C7V5S;DI_BZX84C7V5S;Diodes;Zener <=10V; 7.50V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C7V5S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.84\r
-.MODEL DF D ( IS=11.0p RS=31.2 N=1.10\r
-+ CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C7V5T;DI_BZX84C7V5T;Diodes;Zener <=10V; 7.50V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C7V5T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.82\r
-.MODEL DF D ( IS=8.24p RS=30.4 N=1.10\r
-+ CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C7V5TS;DI_BZX84C7V5TS;Diodes;Zener <=10V; 7.50V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C7V5TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.84\r
-.MODEL DF D ( IS=11.0p RS=31.2 N=1.10\r
-+ CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C7V5W;DI_BZX84C7V5W;Diodes;Zener <=10V; 7.50V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C7V5W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.84\r
-.MODEL DF D ( IS=11.0p RS=31.2 N=1.10\r
-+ CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C8V2;DI_BZX84C8V2;Diodes;Zener <=10V; 8.20V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C8V2  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.57\r
-.MODEL DF D ( IS=17.6p RS=32.6 N=1.10\r
-+ CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.52f RS=3.45 N=2.23 )\r
-.ENDS\r
-\r
-*SRC=BZX84C8V2S;DI_BZX84C8V2S;Diodes;Zener <=10V; 8.20V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C8V2S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.53\r
-.MODEL DF D ( IS=10.0p RS=31.0 N=1.10\r
-+ CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C8V2T;DI_BZX84C8V2T;Diodes;Zener <=10V; 8.20V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C8V2T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.52\r
-.MODEL DF D ( IS=7.54p RS=30.2 N=1.10\r
-+ CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C8V2TS;DI_BZX84C8V2TS;Diodes;Zener <=10V; 8.20V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C8V2TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.53\r
-.MODEL DF D ( IS=10.0p RS=31.0 N=1.10\r
-+ CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C8V2W;DI_BZX84C8V2W;Diodes;Zener <=10V; 8.20V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C8V2W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.53\r
-.MODEL DF D ( IS=10.0p RS=31.0 N=1.10\r
-+ CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C9V1;DI_BZX84C9V1;Diodes;Zener <=10V; 9.10V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C9V1  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.46\r
-.MODEL DF D ( IS=15.8p RS=32.3 N=1.10\r
-+ CJO=27.8p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.17f RS=3.45 N=2.23 )\r
-.ENDS\r
-\r
-*SRC=BZX84C9V1S;DI_BZX84C9V1S;Diodes;Zener <=10V; 9.10V  0.200W   Diodes Inc. ZENER Dual, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C9V1S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.43\r
-.MODEL DF D ( IS=9.05p RS=30.7 N=1.10\r
-+ CJO=27.8p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C9V1T;DI_BZX84C9V1T;Diodes;Zener <=10V; 9.10V  0.150W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C9V1T  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.41\r
-.MODEL DF D ( IS=6.79p RS=29.9 N=1.10\r
-+ CJO=27.8p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C9V1TS;DI_BZX84C9V1TS;Diodes;Zener <=10V; 9.10V  0.200W   Diodes Inc. ZENER Triple, Apply ea. node\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C9V1TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.43\r
-.MODEL DF D ( IS=9.05p RS=30.7 N=1.10\r
-+ CJO=27.8p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=BZX84C9V1W;DI_BZX84C9V1W;Diodes;Zener <=10V; 9.10V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_BZX84C9V1W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.43\r
-.MODEL DF D ( IS=9.05p RS=30.7 N=1.10\r
-+ CJO=27.8p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=DDZ10C;DI_DDZ10C;Diodes;Zener <=10V; 10.0V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ10C  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.65\r
-.MODEL DF D ( IS=20.6p RS=33.0 N=1.10\r
-+ CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.12f RS=4.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ10CS;DI_DDZ10CS;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ10CS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.58\r
-.MODEL DF D ( IS=8.24p RS=30.4 N=1.10\r
-+ CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.65f RS=4.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ11C;DI_DDZ11C;Diodes;Zener 10V-50V; 11.0V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ11C  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.77\r
-.MODEL DF D ( IS=18.7p RS=32.7 N=1.10\r
-+ CJO=33.9p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.75f RS=2.30 N=2.97 )\r
-.ENDS\r
-\r
-*SRC=DDZ11CS;DI_DDZ11CS;Diodes;Zener 10V-50V; 11.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ11CS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.70\r
-.MODEL DF D ( IS=7.49p RS=30.1 N=1.10\r
-+ CJO=33.9p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.50f RS=2.30 N=2.97 )\r
-.ENDS\r
-\r
-*SRC=DDZ12C;DI_DDZ12C;Diodes;Zener 10V-50V; 12.0V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ12C  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.73\r
-.MODEL DF D ( IS=17.2p RS=32.5 N=1.10\r
-+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.43f RS=4.23 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ12CS;DI_DDZ12CS;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ12CS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.66\r
-.MODEL DF D ( IS=6.87p RS=29.9 N=1.10\r
-+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.37f RS=4.23 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ13B;DI_DDZ13B;Diodes;Zener 10V-50V; 13.0V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ13B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 10.7\r
-.MODEL DF D ( IS=15.8p RS=32.3 N=1.10\r
-+ CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.17f RS=6.23 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ13BS;DI_DDZ13BS;Diodes;Zener 10V-50V; 13.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ13BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 10.6\r
-.MODEL DF D ( IS=6.34p RS=29.7 N=1.10\r
-+ CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.27f RS=6.23 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ14;DI_DDZ14;Diodes;Zener 10V-50V; 14.0V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ14  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 11.7\r
-.MODEL DF D ( IS=14.7p RS=32.1 N=1.10\r
-+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.94f RS=8.23 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ14S;DI_DDZ14S;Diodes;Zener 10V-50V; 14.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ14S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 11.6\r
-.MODEL DF D ( IS=5.89p RS=29.4 N=1.10\r
-+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.18f RS=8.23 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ15;DI_DDZ15;Diodes;Zener 10V-50V; 15.0V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ15  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.7\r
-.MODEL DF D ( IS=13.7p RS=31.9 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.75f RS=10.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ15S;DI_DDZ15S;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ15S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.6\r
-.MODEL DF D ( IS=5.49p RS=29.3 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.10f RS=10.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ16;DI_DDZ16;Diodes;Zener 10V-50V; 16.0V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ16  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 13.6\r
-.MODEL DF D ( IS=12.9p RS=31.7 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.58f RS=10.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ16S;DI_DDZ16S;Diodes;Zener 10V-50V; 16.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ16S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 13.6\r
-.MODEL DF D ( IS=5.15p RS=29.1 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.03f RS=10.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ18C;DI_DDZ18C;Diodes;Zener 10V-50V; 18.0V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ18C  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.6\r
-.MODEL DF D ( IS=11.4p RS=31.3 N=1.10\r
-+ CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.29f RS=15.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ18CS;DI_DDZ18CS;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ18CS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.5\r
-.MODEL DF D ( IS=4.58p RS=28.7 N=1.10\r
-+ CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=9.16e-016 RS=15.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ20C;DI_DDZ20C;Diodes;Zener 10V-50V; 20.0V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ20C  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.5\r
-.MODEL DF D ( IS=10.3p RS=31.0 N=1.10\r
-+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.06f RS=20.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ20CS;DI_DDZ20CS;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ20CS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.5\r
-.MODEL DF D ( IS=4.12p RS=28.4 N=1.10\r
-+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.24e-016 RS=20.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ22D;DI_DDZ22D;Diodes;Zener 10V-50V; 22.0V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ22D  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.7\r
-.MODEL DF D ( IS=9.36p RS=30.8 N=1.10\r
-+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.87f RS=14.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ22DS;DI_DDZ22DS;Diodes;Zener 10V-50V; 22.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ22DS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.6\r
-.MODEL DF D ( IS=3.75p RS=28.2 N=1.10\r
-+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=7.49e-016 RS=14.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ24C;DI_DDZ24C;Diodes;Zener 10V-50V; 24.0V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ24C  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.7\r
-.MODEL DF D ( IS=8.58p RS=30.5 N=1.10\r
-+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.72f RS=19.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ24CS;DI_DDZ24CS;Diodes;Zener 10V-50V; 24.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ24CS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.6\r
-.MODEL DF D ( IS=3.43p RS=27.9 N=1.10\r
-+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.87e-016 RS=19.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ27D;DI_DDZ27D;Diodes;Zener 10V-50V; 27.0V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ27D  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 24.6\r
-.MODEL DF D ( IS=7.63p RS=30.2 N=1.10\r
-+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.53f RS=29.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ27DS;DI_DDZ27DS;Diodes;Zener 10V-50V; 27.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ27DS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 24.5\r
-.MODEL DF D ( IS=3.05p RS=27.6 N=1.10\r
-+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.10e-016 RS=29.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ30D;DI_DDZ30D;Diodes;Zener 10V-50V; 30.0V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ30D  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.6\r
-.MODEL DF D ( IS=6.87p RS=29.9 N=1.10\r
-+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.37f RS=39.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ30DS;DI_DDZ30DS;Diodes;Zener 10V-50V; 30.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ30DS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.5\r
-.MODEL DF D ( IS=2.75p RS=27.3 N=1.10\r
-+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.49e-016 RS=39.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ33;DI_DDZ33;Diodes;Zener 10V-50V; 33.0V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ33  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 30.4\r
-.MODEL DF D ( IS=6.24p RS=29.6 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.25f RS=59.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ33S;DI_DDZ33S;Diodes;Zener 10V-50V; 33.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ33S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 30.4\r
-.MODEL DF D ( IS=2.50p RS=27.0 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.99e-016 RS=59.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ36;DI_DDZ36;Diodes;Zener 10V-50V; 36.0V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ36  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 33.4\r
-.MODEL DF D ( IS=5.72p RS=29.4 N=1.10\r
-+ CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.14f RS=69.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ36S;DI_DDZ36S;Diodes;Zener 10V-50V; 36.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ36S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 33.3\r
-.MODEL DF D ( IS=2.29p RS=26.8 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.58e-016 RS=69.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ39F;DI_DDZ39F;Diodes;Zener 10V-50V; 39.0V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ39F  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.4\r
-.MODEL DF D ( IS=5.28p RS=29.1 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.06f RS=69.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ39FS;DI_DDZ39FS;Diodes;Zener 10V-50V; 39.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ39FS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.3\r
-.MODEL DF D ( IS=2.11p RS=26.5 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.23e-016 RS=69.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ43;DI_DDZ43;Diodes;Zener 10V-50V; 43.0V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ43  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 40.4\r
-.MODEL DF D ( IS=4.79p RS=28.9 N=1.10\r
-+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=9.58e-016 RS=74.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ43S;DI_DDZ43S;Diodes;Zener 10V-50V; 43.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ43S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 40.3\r
-.MODEL DF D ( IS=1.92p RS=26.3 N=1.10\r
-+ CJO=12.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.83e-016 RS=74.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ47S;DI_DDZ47S;Diodes;Zener 10V-50V; 47.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ47S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 44.3\r
-.MODEL DF D ( IS=1.75p RS=26.0 N=1.10\r
-+ CJO=12.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.51e-016 RS=74.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ5V1B;DI_DDZ5V1B;Diodes;Zener <=10V; 5.10V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ5V1B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.62\r
-.MODEL DF D ( IS=40.4p RS=34.9 N=1.10\r
-+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.08f RS=13.1 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ5V1BS;DI_DDZ5V1BS;Diodes;Zener <=10V; 5.10V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ5V1BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.55\r
-.MODEL DF D ( IS=16.2p RS=32.3 N=1.10\r
-+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.23f RS=13.1 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ5V6B;DI_DDZ5V6B;Diodes;Zener <=10V; 5.60V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ5V6B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.23\r
-.MODEL DF D ( IS=36.8p RS=34.7 N=1.10\r
-+ CJO=106p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=7.36f RS=7.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ5V6BS;DI_DDZ5V6BS;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ5V6BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.16\r
-.MODEL DF D ( IS=14.7p RS=32.1 N=1.10\r
-+ CJO=106p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.94f RS=7.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ6V2B;DI_DDZ6V2B;Diodes;Zener <=10V; 6.20V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ6V2B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.91\r
-.MODEL DF D ( IS=33.2p RS=34.4 N=1.10\r
-+ CJO=80.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.65f RS=3.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ6V2BS;DI_DDZ6V2BS;Diodes;Zener <=10V; 6.20V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ6V2BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.83\r
-.MODEL DF D ( IS=13.3p RS=31.8 N=1.10\r
-+ CJO=80.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.66f RS=3.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ6V8C;DI_DDZ6V8C;Diodes;Zener <=10V; 6.80V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ6V8C  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 4.56\r
-.MODEL DF D ( IS=30.3p RS=34.1 N=1.10\r
-+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.06f RS=1.15 N=2.97 )\r
-.ENDS\r
-\r
-*SRC=DDZ6V8CS;DI_DDZ6V8CS;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ6V8CS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 4.49\r
-.MODEL DF D ( IS=12.1p RS=31.5 N=1.10\r
-+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.42f RS=1.15 N=2.97 )\r
-.ENDS\r
-\r
-*SRC=DDZ7V5C;DI_DDZ7V5C;Diodes;Zener <=10V; 7.50V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ7V5C  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.21\r
-.MODEL DF D ( IS=27.5p RS=33.8 N=1.10\r
-+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.49f RS=2.12 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ7V5CS;DI_DDZ7V5CS;Diodes;Zener <=10V; 7.50V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ7V5CS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.14\r
-.MODEL DF D ( IS=11.0p RS=31.2 N=1.10\r
-+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.20f RS=2.12 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ8V2C;DI_DDZ8V2C;Diodes;Zener <=10V; 8.20V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ8V2C  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.86\r
-.MODEL DF D ( IS=25.1p RS=33.6 N=1.10\r
-+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.02f RS=4.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ8V2CS;DI_DDZ8V2CS;Diodes;Zener <=10V; 8.20V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ8V2CS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.79\r
-.MODEL DF D ( IS=10.0p RS=31.0 N=1.10\r
-+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.01f RS=4.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ9688;DI_DDZ9688;Diodes;Zener <=10V; 4.70V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9688  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.63\r
-.MODEL DF D ( IS=43.8p RS=35.2 N=1.10\r
-+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.77f RS=6.45k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ9688S;DI_DDZ9688S;Diodes;Zener <=10V; 4.70V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9688S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.56\r
-.MODEL DF D ( IS=17.5p RS=32.6 N=1.10\r
-+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.51f RS=6.45k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ9689;DI_DDZ9689;Diodes;Zener <=10V; 5.10V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9689  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.15\r
-.MODEL DF D ( IS=40.4p RS=34.9 N=1.10\r
-+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.08f RS=3.95k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ9689S;DI_DDZ9689S;Diodes;Zener <=10V; 5.10V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9689S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.08\r
-.MODEL DF D ( IS=16.2p RS=32.3 N=1.10\r
-+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.23f RS=3.95k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ9690;DI_DDZ9690;Diodes;Zener <=10V; 5.60V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9690  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.79\r
-.MODEL DF D ( IS=36.8p RS=34.7 N=1.10\r
-+ CJO=92.6p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=7.36f RS=946 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ9690S;DI_DDZ9690S;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9690S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.72\r
-.MODEL DF D ( IS=14.7p RS=32.1 N=1.10\r
-+ CJO=92.6p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.94f RS=946 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ9691;DI_DDZ9691;Diodes;Zener <=10V; 6.20V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9691  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.31\r
-.MODEL DF D ( IS=33.2p RS=34.4 N=1.10\r
-+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.65f RS=230 N=1.49 )\r
-.ENDS\r
-\r
-*SRC=DDZ9691S;DI_DDZ9691S;Diodes;Zener <=10V; 6.20V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9691S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.28\r
-.MODEL DF D ( IS=13.3p RS=31.8 N=1.10\r
-+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.66f RS=230 N=1.49 )\r
-.ENDS\r
-\r
-*SRC=DDZ9692;DI_DDZ9692;Diodes;Zener <=10V; 6.80V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9692  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.71\r
-.MODEL DF D ( IS=30.3p RS=34.1 N=1.10\r
-+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.06f RS=23.0 N=0.149 )\r
-.ENDS\r
-\r
-*SRC=DDZ9692S;DI_DDZ9692S;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9692S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.71\r
-.MODEL DF D ( IS=12.1p RS=31.5 N=1.10\r
-+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.42f RS=23.0 N=0.149 )\r
-.ENDS\r
-\r
-*SRC=DDZ9693;DI_DDZ9693;Diodes;Zener <=10V; 7.50V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9693  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.41\r
-.MODEL DF D ( IS=27.5p RS=33.8 N=1.10\r
-+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.49f RS=23.0 N=0.149 )\r
-.ENDS\r
-\r
-*SRC=DDZ9693S;DI_DDZ9693S;Diodes;Zener <=10V; 7.50V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9693S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.41\r
-.MODEL DF D ( IS=11.0p RS=31.2 N=1.10\r
-+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.20f RS=23.0 N=0.149 )\r
-.ENDS\r
-\r
-*SRC=DDZ9694;DI_DDZ9694;Diodes;Zener <=10V; 8.20V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9694  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.07\r
-.MODEL DF D ( IS=25.1p RS=33.6 N=1.10\r
-+ CJO=47.6p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.02f RS=34.5 N=0.223 )\r
-.ENDS\r
-\r
-*SRC=DDZ9694S;DI_DDZ9694S;Diodes;Zener <=10V; 8.20V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9694S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.06\r
-.MODEL DF D ( IS=10.0p RS=31.0 N=1.10\r
-+ CJO=47.6p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.01f RS=34.5 N=0.223 )\r
-.ENDS\r
-\r
-*SRC=DDZ9696;DI_DDZ9696;Diodes;Zener <=10V; 9.10V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9696  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.90\r
-.MODEL DF D ( IS=22.6p RS=33.3 N=1.10\r
-+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.53f RS=50.6 N=0.327 )\r
-.ENDS\r
-\r
-*SRC=DDZ9696S;DI_DDZ9696S;Diodes;Zener <=10V; 9.10V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9696S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.89\r
-.MODEL DF D ( IS=9.05p RS=30.7 N=1.10\r
-+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.81f RS=50.6 N=0.327 )\r
-.ENDS\r
-\r
-*SRC=DDZ9697;DI_DDZ9697;Diodes;Zener <=10V; 10.0V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9697  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.73\r
-.MODEL DF D ( IS=20.6p RS=33.0 N=1.10\r
-+ CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.12f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZ9697S;DI_DDZ9697S;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9697S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.72\r
-.MODEL DF D ( IS=8.24p RS=30.4 N=1.10\r
-+ CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.65f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZ9698;DI_DDZ9698;Diodes;Zener 10V-50V; 11.0V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9698  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 10.7\r
-.MODEL DF D ( IS=18.7p RS=32.7 N=1.10\r
-+ CJO=35.2p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.75f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZ9699;DI_DDZ9699;Diodes;Zener 10V-50V; 12.0V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9699  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 11.7\r
-.MODEL DF D ( IS=17.2p RS=32.5 N=1.10\r
-+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.43f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZ9699S;DI_DDZ9699S;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9699S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 11.7\r
-.MODEL DF D ( IS=6.87p RS=29.9 N=1.10\r
-+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.37f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZ9700;DI_DDZ9700;Diodes;Zener 10V-50V; 13.0V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9700  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.7\r
-.MODEL DF D ( IS=15.8p RS=32.3 N=1.10\r
-+ CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.17f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZ9700S;DI_DDZ9700S;Diodes;Zener 10V-50V; 13.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9700S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.7\r
-.MODEL DF D ( IS=6.34p RS=29.7 N=1.10\r
-+ CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.27f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZ9701;DI_DDZ9701;Diodes;Zener 10V-50V; 14.0V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9701  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 13.7\r
-.MODEL DF D ( IS=14.7p RS=32.1 N=1.10\r
-+ CJO=27.7p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.94f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZ9702;DI_DDZ9702;Diodes;Zener 10V-50V; 15.0V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9702  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 14.7\r
-.MODEL DF D ( IS=13.7p RS=31.9 N=1.10\r
-+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.75f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZ9702S;DI_DDZ9702S;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9702S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 14.7\r
-.MODEL DF D ( IS=5.49p RS=29.3 N=1.10\r
-+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.10f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZ9703;DI_DDZ9703;Diodes;Zener 10V-50V; 16.0V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9703  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.7\r
-.MODEL DF D ( IS=12.9p RS=31.7 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.58f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZ9703S;DI_DDZ9703S;Diodes;Zener 10V-50V; 16.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9703S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.7\r
-.MODEL DF D ( IS=5.15p RS=29.1 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.03f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZ9705;DI_DDZ9705;Diodes;Zener 10V-50V; 18.0V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9705  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.7\r
-.MODEL DF D ( IS=11.4p RS=31.3 N=1.10\r
-+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.29f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZ9705S;DI_DDZ9705S;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9705S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.7\r
-.MODEL DF D ( IS=4.58p RS=28.7 N=1.10\r
-+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=9.16e-016 RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZ9707;DI_DDZ9707;Diodes;Zener 10V-50V; 20.0V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9707  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.7\r
-.MODEL DF D ( IS=10.3p RS=31.0 N=1.10\r
-+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.06f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZ9707S;DI_DDZ9707S;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9707S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.7\r
-.MODEL DF D ( IS=4.12p RS=28.4 N=1.10\r
-+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.24e-016 RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZ9708;DI_DDZ9708;Diodes;Zener 10V-50V; 22.0V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9708  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.6\r
-.MODEL DF D ( IS=9.36p RS=30.8 N=1.10\r
-+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.87f RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZ9708S;DI_DDZ9708S;Diodes;Zener 10V-50V; 22.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9708S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.6\r
-.MODEL DF D ( IS=3.75p RS=28.2 N=1.10\r
-+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=7.49e-016 RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZ9709;DI_DDZ9709;Diodes;Zener 10V-50V; 24.0V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9709  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 23.6\r
-.MODEL DF D ( IS=8.58p RS=30.5 N=1.10\r
-+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.72f RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZ9709S;DI_DDZ9709S;Diodes;Zener 10V-50V; 24.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9709S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 23.6\r
-.MODEL DF D ( IS=3.43p RS=27.9 N=1.10\r
-+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.87e-016 RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZ9711;DI_DDZ9711;Diodes;Zener 10V-50V; 27.0V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9711  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 26.6\r
-.MODEL DF D ( IS=7.63p RS=30.2 N=1.10\r
-+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.53f RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZ9711S;DI_DDZ9711S;Diodes;Zener 10V-50V; 27.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9711S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 26.6\r
-.MODEL DF D ( IS=3.05p RS=27.6 N=1.10\r
-+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.10e-016 RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZ9712;DI_DDZ9712;Diodes;Zener 10V-50V; 28.0V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9712  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.6\r
-.MODEL DF D ( IS=7.36p RS=30.1 N=1.10\r
-+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.47f RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZ9712S;DI_DDZ9712S;Diodes;Zener 10V-50V; 28.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9712S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.6\r
-.MODEL DF D ( IS=2.94p RS=27.5 N=1.10\r
-+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.89e-016 RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZ9713;DI_DDZ9713;Diodes;Zener 10V-50V; 30.0V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9713  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 29.6\r
-.MODEL DF D ( IS=6.87p RS=29.9 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.37f RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZ9713S;DI_DDZ9713S;Diodes;Zener 10V-50V; 30.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9713S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 29.6\r
-.MODEL DF D ( IS=2.75p RS=27.3 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.49e-016 RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZ9714;DI_DDZ9714;Diodes;Zener 10V-50V; 33.0V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9714  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 31.0\r
-.MODEL DF D ( IS=6.24p RS=29.6 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.25f RS=1.35k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ9714S;DI_DDZ9714S;Diodes;Zener 10V-50V; 33.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9714S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 31.0\r
-.MODEL DF D ( IS=2.50p RS=27.0 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.99e-016 RS=1.35k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ9715;DI_DDZ9715;Diodes;Zener 10V-50V; 36.0V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9715  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 33.9\r
-.MODEL DF D ( IS=5.72p RS=29.4 N=1.10\r
-+ CJO=13.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.14f RS=4.45k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ9715S;DI_DDZ9715S;Diodes;Zener 10V-50V; 36.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9715S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 34.0\r
-.MODEL DF D ( IS=2.29p RS=26.8 N=1.10\r
-+ CJO=13.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.58e-016 RS=1.45k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ9716;DI_DDZ9716;Diodes;Zener 10V-50V; 39.0V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9716  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.9\r
-.MODEL DF D ( IS=5.28p RS=29.1 N=1.10\r
-+ CJO=24.5p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.06f RS=4.45k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ9716S;DI_DDZ9716S;Diodes;Zener 10V-50V; 39.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9716S  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.9\r
-.MODEL DF D ( IS=2.11p RS=26.5 N=1.10\r
-+ CJO=12.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.23e-016 RS=1.45k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ9717;DI_DDZ9717;Diodes;Zener 10V-50V; 43.0V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9717  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 40.8\r
-.MODEL DF D ( IS=4.79p RS=28.9 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=9.58e-016 RS=6.25k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ9V1C;DI_DDZ9V1C;Diodes;Zener <=10V; 9.10V  0.500W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9V1C  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.76\r
-.MODEL DF D ( IS=22.6p RS=33.3 N=1.10\r
-+ CJO=41.0p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.53f RS=4.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZ9V1CS;DI_DDZ9V1CS;Diodes;Zener <=10V; 9.10V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZ9V1CS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.68\r
-.MODEL DF D ( IS=9.05p RS=30.7 N=1.10\r
-+ CJO=41.0p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.81f RS=4.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX10C;DI_DDZX10C;Diodes;Zener <=10V; 10.0V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX10C  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.61\r
-.MODEL DF D ( IS=12.4p RS=31.6 N=1.10\r
-+ CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.47f RS=4.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX10CTS;DI_DDZX10CTS;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX10CTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.58\r
-.MODEL DF D ( IS=8.24p RS=30.4 N=1.10\r
-+ CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.65f RS=4.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX10CW;DI_DDZX10CW;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX10CW  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.58\r
-.MODEL DF D ( IS=8.24p RS=30.4 N=1.10\r
-+ CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.65f RS=4.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX11C;DI_DDZX11C;Diodes;Zener 10V-50V; 11.0V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX11C  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.74\r
-.MODEL DF D ( IS=11.2p RS=31.3 N=1.10\r
-+ CJO=33.9p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.25f RS=2.30 N=2.97 )\r
-.ENDS\r
-\r
-*SRC=DDZX11CTS;DI_DDZX11CTS;Diodes;Zener 10V-50V; 11.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX11CTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.70\r
-.MODEL DF D ( IS=7.49p RS=30.1 N=1.10\r
-+ CJO=33.9p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.50f RS=2.30 N=2.97 )\r
-.ENDS\r
-\r
-*SRC=DDZX11CW;DI_DDZX11CW;Diodes;Zener 10V-50V; 11.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX11CW  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.70\r
-.MODEL DF D ( IS=7.49p RS=30.1 N=1.10\r
-+ CJO=33.9p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.50f RS=2.30 N=2.97 )\r
-.ENDS\r
-\r
-*SRC=DDZX12C;DI_DDZX12C;Diodes;Zener 10V-50V; 12.0V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX12C  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.69\r
-.MODEL DF D ( IS=10.3p RS=31.0 N=1.10\r
-+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.06f RS=4.23 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX12CTS;DI_DDZX12CTS;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX12CTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.66\r
-.MODEL DF D ( IS=6.87p RS=29.9 N=1.10\r
-+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.37f RS=4.23 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX12CW;DI_DDZX12CW;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX12CW  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.66\r
-.MODEL DF D ( IS=6.87p RS=29.9 N=1.10\r
-+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.37f RS=4.23 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX13B;DI_DDZX13B;Diodes;Zener 10V-50V; 13.0V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX13B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 10.7\r
-.MODEL DF D ( IS=9.51p RS=30.8 N=1.10\r
-+ CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.90f RS=6.23 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX13BTS;DI_DDZX13BTS;Diodes;Zener 10V-50V; 13.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX13BTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 10.6\r
-.MODEL DF D ( IS=6.34p RS=29.7 N=1.10\r
-+ CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.27f RS=6.23 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX13BW;DI_DDZX13BW;Diodes;Zener 10V-50V; 13.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX13BW  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 10.6\r
-.MODEL DF D ( IS=6.34p RS=29.7 N=1.10\r
-+ CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.27f RS=6.23 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX14;DI_DDZX14;Diodes;Zener 10V-50V; 14.0V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX14  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 11.6\r
-.MODEL DF D ( IS=8.83p RS=30.6 N=1.10\r
-+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.77f RS=8.23 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX14TS;DI_DDZX14TS;Diodes;Zener 10V-50V; 14.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX14TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 11.6\r
-.MODEL DF D ( IS=5.89p RS=29.4 N=1.10\r
-+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.18f RS=8.23 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX14W;DI_DDZX14W;Diodes;Zener 10V-50V; 14.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX14W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 11.6\r
-.MODEL DF D ( IS=5.89p RS=29.4 N=1.10\r
-+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.18f RS=8.23 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX15;DI_DDZX15;Diodes;Zener 10V-50V; 15.0V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX15  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.6\r
-.MODEL DF D ( IS=8.24p RS=30.4 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.65f RS=10.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX15TS;DI_DDZX15TS;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX15TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.6\r
-.MODEL DF D ( IS=5.49p RS=29.3 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.10f RS=10.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX15W;DI_DDZX15W;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX15W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.6\r
-.MODEL DF D ( IS=5.49p RS=29.3 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.10f RS=10.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX16;DI_DDZX16;Diodes;Zener 10V-50V; 16.0V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX16  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 13.6\r
-.MODEL DF D ( IS=7.72p RS=30.2 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.55f RS=10.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX16TS;DI_DDZX16TS;Diodes;Zener 10V-50V; 16.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX16TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 13.6\r
-.MODEL DF D ( IS=5.15p RS=29.1 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.03f RS=10.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX16W;DI_DDZX16W;Diodes;Zener 10V-50V; 16.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX16W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 13.6\r
-.MODEL DF D ( IS=5.15p RS=29.1 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.03f RS=10.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX18C;DI_DDZX18C;Diodes;Zener 10V-50V; 18.0V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX18C  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.5\r
-.MODEL DF D ( IS=6.87p RS=29.9 N=1.10\r
-+ CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.37f RS=15.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX18CTS;DI_DDZX18CTS;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX18CTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.5\r
-.MODEL DF D ( IS=4.58p RS=28.7 N=1.10\r
-+ CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=9.16e-016 RS=15.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX18CW;DI_DDZX18CW;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX18CW  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.5\r
-.MODEL DF D ( IS=4.58p RS=28.7 N=1.10\r
-+ CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=9.16e-016 RS=15.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX20C;DI_DDZX20C;Diodes;Zener 10V-50V; 20.0V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX20C  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.5\r
-.MODEL DF D ( IS=6.18p RS=29.6 N=1.10\r
-+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.24f RS=20.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX20CTS;DI_DDZX20CTS;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX20CTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.5\r
-.MODEL DF D ( IS=4.12p RS=28.4 N=1.10\r
-+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.24e-016 RS=20.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX20CW;DI_DDZX20CW;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX20CW  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.5\r
-.MODEL DF D ( IS=4.12p RS=28.4 N=1.10\r
-+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.24e-016 RS=20.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX22D;DI_DDZX22D;Diodes;Zener 10V-50V; 22.0V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX22D  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.7\r
-.MODEL DF D ( IS=5.62p RS=29.3 N=1.10\r
-+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.12f RS=14.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX22DTS;DI_DDZX22DTS;Diodes;Zener 10V-50V; 22.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX22DTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.6\r
-.MODEL DF D ( IS=3.75p RS=28.2 N=1.10\r
-+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=7.49e-016 RS=14.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX22DW;DI_DDZX22DW;Diodes;Zener 10V-50V; 22.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX22DW  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.6\r
-.MODEL DF D ( IS=3.75p RS=28.2 N=1.10\r
-+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=7.49e-016 RS=14.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX24C;DI_DDZX24C;Diodes;Zener 10V-50V; 24.0V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX24C  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.6\r
-.MODEL DF D ( IS=5.15p RS=29.1 N=1.10\r
-+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.03f RS=19.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX24CTS;DI_DDZX24CTS;Diodes;Zener 10V-50V; 24.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX24CTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.6\r
-.MODEL DF D ( IS=3.43p RS=27.9 N=1.10\r
-+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.87e-016 RS=19.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX24CW;DI_DDZX24CW;Diodes;Zener 10V-50V; 24.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX24CW  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.6\r
-.MODEL DF D ( IS=3.43p RS=27.9 N=1.10\r
-+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.87e-016 RS=19.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX27D;DI_DDZX27D;Diodes;Zener 10V-50V; 27.0V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX27D  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 24.6\r
-.MODEL DF D ( IS=4.58p RS=28.7 N=1.10\r
-+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX27DTS;DI_DDZX27DTS;Diodes;Zener 10V-50V; 27.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX27DTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 24.5\r
-.MODEL DF D ( IS=3.05p RS=27.6 N=1.10\r
-+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.10e-016 RS=29.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX27DW;DI_DDZX27DW;Diodes;Zener 10V-50V; 27.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX27DW  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 24.5\r
-.MODEL DF D ( IS=3.05p RS=27.6 N=1.10\r
-+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.10e-016 RS=29.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX30D;DI_DDZX30D;Diodes;Zener 10V-50V; 30.0V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX30D  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.5\r
-.MODEL DF D ( IS=4.12p RS=28.4 N=1.10\r
-+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX30DS;DI_DDZX30DS;Diodes;Zener 10V-50V; 30.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX30DS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.5\r
-.MODEL DF D ( IS=2.75p RS=27.3 N=1.10\r
-+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.49e-016 RS=39.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX30DW;DI_DDZX30DW;Diodes;Zener 10V-50V; 30.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX30DW  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.5\r
-.MODEL DF D ( IS=2.75p RS=27.3 N=1.10\r
-+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.49e-016 RS=39.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX33;DI_DDZX33;Diodes;Zener 10V-50V; 33.0V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX33  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 30.4\r
-.MODEL DF D ( IS=3.75p RS=28.2 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=7.49e-016 RS=59.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX33TS;DI_DDZX33TS;Diodes;Zener 10V-50V; 33.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX33TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 30.4\r
-.MODEL DF D ( IS=2.50p RS=27.0 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.99e-016 RS=59.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX33W;DI_DDZX33W;Diodes;Zener 10V-50V; 33.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX33W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 30.4\r
-.MODEL DF D ( IS=2.50p RS=27.0 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.99e-016 RS=59.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX36;DI_DDZX36;Diodes;Zener 10V-50V; 36.0V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX36  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 33.4\r
-.MODEL DF D ( IS=3.43p RS=27.9 N=1.10\r
-+ CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.87e-016 RS=69.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX36TS;DI_DDZX36TS;Diodes;Zener 10V-50V; 36.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX36TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 33.3\r
-.MODEL DF D ( IS=2.29p RS=26.8 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.58e-016 RS=69.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX36W;DI_DDZX36W;Diodes;Zener 10V-50V; 36.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX36W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 33.3\r
-.MODEL DF D ( IS=2.29p RS=26.8 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.58e-016 RS=69.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX39F;DI_DDZX39F;Diodes;Zener 10V-50V; 39.0V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX39F  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.3\r
-.MODEL DF D ( IS=3.17p RS=27.7 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.34e-016 RS=69.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX39FTS;DI_DDZX39FTS;Diodes;Zener 10V-50V; 39.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX39FTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.3\r
-.MODEL DF D ( IS=2.11p RS=26.5 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.23e-016 RS=69.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX39FW;DI_DDZX39FW;Diodes;Zener 10V-50V; 39.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX39FW  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.3\r
-.MODEL DF D ( IS=2.11p RS=26.5 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.23e-016 RS=69.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX43;DI_DDZX43;Diodes;Zener 10V-50V; 43.0V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX43  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 40.3\r
-.MODEL DF D ( IS=2.87p RS=27.4 N=1.10\r
-+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.75e-016 RS=74.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX43TS;DI_DDZX43TS;Diodes;Zener 10V-50V; 43.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX43TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 40.3\r
-.MODEL DF D ( IS=1.92p RS=26.3 N=1.10\r
-+ CJO=12.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.83e-016 RS=74.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX43W;DI_DDZX43W;Diodes;Zener 10V-50V; 43.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX43W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 40.3\r
-.MODEL DF D ( IS=1.92p RS=26.3 N=1.10\r
-+ CJO=12.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.83e-016 RS=74.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX47TS;DI_DDZX47TS;Diodes;Zener 10V-50V; 47.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX47TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 44.3\r
-.MODEL DF D ( IS=1.75p RS=26.0 N=1.10\r
-+ CJO=12.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.51e-016 RS=74.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX47W;DI_DDZX47W;Diodes;Zener 10V-50V; 47.0V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX47W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 44.3\r
-.MODEL DF D ( IS=1.75p RS=26.0 N=1.10\r
-+ CJO=12.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.51e-016 RS=74.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX5V1B;DI_DDZX5V1B;Diodes;Zener <=10V; 5.10V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX5V1B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.58\r
-.MODEL DF D ( IS=24.2p RS=33.5 N=1.10\r
-+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.85f RS=13.1 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX5V1BTS;DI_DDZX5V1BTS;Diodes;Zener <=10V; 5.10V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX5V1BTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.55\r
-.MODEL DF D ( IS=16.2p RS=32.3 N=1.10\r
-+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.23f RS=13.1 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX5V1BW;DI_DDZX5V1BW;Diodes;Zener <=10V; 5.10V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX5V1BW  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.55\r
-.MODEL DF D ( IS=16.2p RS=32.3 N=1.10\r
-+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.23f RS=13.1 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX5V6B;DI_DDZX5V6B;Diodes;Zener <=10V; 5.60V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX5V6B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.19\r
-.MODEL DF D ( IS=22.1p RS=33.2 N=1.10\r
-+ CJO=106p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.41f RS=7.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX5V6BTS;DI_DDZX5V6BTS;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX5V6BTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.16\r
-.MODEL DF D ( IS=14.7p RS=32.1 N=1.10\r
-+ CJO=106p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.94f RS=7.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX5V6BW;DI_DDZX5V6BW;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX5V6BW  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.16\r
-.MODEL DF D ( IS=14.7p RS=32.1 N=1.10\r
-+ CJO=106p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.94f RS=7.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX6V2B;DI_DDZX6V2B;Diodes;Zener <=10V; 6.20V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX6V2B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.87\r
-.MODEL DF D ( IS=19.9p RS=32.9 N=1.10\r
-+ CJO=80.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.99f RS=3.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX6V2BTS;DI_DDZX6V2BTS;Diodes;Zener <=10V; 6.20V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX6V2BTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.83\r
-.MODEL DF D ( IS=13.3p RS=31.8 N=1.10\r
-+ CJO=80.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.66f RS=3.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX6V2BW;DI_DDZX6V2BW;Diodes;Zener <=10V; 6.20V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX6V2BW  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.83\r
-.MODEL DF D ( IS=13.3p RS=31.8 N=1.10\r
-+ CJO=80.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.66f RS=3.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX6V8C;DI_DDZX6V8C;Diodes;Zener <=10V; 6.80V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX6V8C  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 4.52\r
-.MODEL DF D ( IS=18.2p RS=32.7 N=1.10\r
-+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.64f RS=1.15 N=2.97 )\r
-.ENDS\r
-\r
-*SRC=DDZX6V8CTS;DI_DDZX6V8CTS;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX6V8CTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 4.49\r
-.MODEL DF D ( IS=12.1p RS=31.5 N=1.10\r
-+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.42f RS=1.15 N=2.97 )\r
-.ENDS\r
-\r
-*SRC=DDZX6V8CW;DI_DDZX6V8CW;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX6V8CW  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 4.49\r
-.MODEL DF D ( IS=12.1p RS=31.5 N=1.10\r
-+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.42f RS=1.15 N=2.97 )\r
-.ENDS\r
-\r
-*SRC=DDZX7V5C;DI_DDZX7V5C;Diodes;Zener <=10V; 7.50V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX7V5C  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.17\r
-.MODEL DF D ( IS=16.5p RS=32.4 N=1.10\r
-+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.30f RS=2.12 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX7V5CTS;DI_DDZX7V5CTS;Diodes;Zener <=10V; 7.50V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX7V5CTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.14\r
-.MODEL DF D ( IS=11.0p RS=31.2 N=1.10\r
-+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.20f RS=2.12 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX7V5CW;DI_DDZX7V5CW;Diodes;Zener <=10V; 7.50V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX7V5CW  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.14\r
-.MODEL DF D ( IS=11.0p RS=31.2 N=1.10\r
-+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.20f RS=2.12 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX8V2C;DI_DDZX8V2C;Diodes;Zener <=10V; 8.20V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX8V2C  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.82\r
-.MODEL DF D ( IS=15.1p RS=32.1 N=1.10\r
-+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.01f RS=4.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX8V2CTS;DI_DDZX8V2CTS;Diodes;Zener <=10V; 8.20V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX8V2CTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.79\r
-.MODEL DF D ( IS=10.0p RS=31.0 N=1.10\r
-+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.01f RS=4.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX8V2CW;DI_DDZX8V2CW;Diodes;Zener <=10V; 8.20V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX8V2CW  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.79\r
-.MODEL DF D ( IS=10.0p RS=31.0 N=1.10\r
-+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.01f RS=4.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9688;DI_DDZX9688;Diodes;Zener <=10V; 4.70V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9688  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.59\r
-.MODEL DF D ( IS=26.3p RS=33.7 N=1.10\r
-+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.26f RS=6.45k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9688TS;DI_DDZX9688TS;Diodes;Zener <=10V; 4.70V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9688TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.56\r
-.MODEL DF D ( IS=17.5p RS=32.6 N=1.10\r
-+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.51f RS=6.45k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9688W;DI_DDZX9688W;Diodes;Zener <=10V; 4.70V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9688W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.56\r
-.MODEL DF D ( IS=17.5p RS=32.6 N=1.10\r
-+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.51f RS=6.45k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9689;DI_DDZX9689;Diodes;Zener <=10V; 5.10V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9689  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.11\r
-.MODEL DF D ( IS=24.2p RS=33.5 N=1.10\r
-+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.85f RS=3.95k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9689TS;DI_DDZX9689TS;Diodes;Zener <=10V; 5.10V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9689TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.08\r
-.MODEL DF D ( IS=16.2p RS=32.3 N=1.10\r
-+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.23f RS=3.95k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9689W;DI_DDZX9689W;Diodes;Zener <=10V; 5.10V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9689W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.08\r
-.MODEL DF D ( IS=16.2p RS=32.3 N=1.10\r
-+ CJO=119p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.23f RS=3.95k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9690;DI_DDZX9690;Diodes;Zener <=10V; 5.60V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9690  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.75\r
-.MODEL DF D ( IS=22.1p RS=33.2 N=1.10\r
-+ CJO=92.6p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.41f RS=946 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9690TS;DI_DDZX9690TS;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9690TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.72\r
-.MODEL DF D ( IS=14.7p RS=32.1 N=1.10\r
-+ CJO=92.6p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.94f RS=946 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9690W;DI_DDZX9690W;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9690W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.72\r
-.MODEL DF D ( IS=14.7p RS=32.1 N=1.10\r
-+ CJO=92.6p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.94f RS=946 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9691;DI_DDZX9691;Diodes;Zener <=10V; 6.20V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9691  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.29\r
-.MODEL DF D ( IS=19.9p RS=32.9 N=1.10\r
-+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.99f RS=230 N=1.49 )\r
-.ENDS\r
-\r
-*SRC=DDZX9691TS;DI_DDZX9691TS;Diodes;Zener <=10V; 6.20V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9691TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.28\r
-.MODEL DF D ( IS=13.3p RS=31.8 N=1.10\r
-+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.66f RS=230 N=1.49 )\r
-.ENDS\r
-\r
-*SRC=DDZX9691W;DI_DDZX9691W;Diodes;Zener <=10V; 6.20V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9691W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.28\r
-.MODEL DF D ( IS=13.3p RS=31.8 N=1.10\r
-+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.66f RS=230 N=1.49 )\r
-.ENDS\r
-\r
-*SRC=DDZX9692;DI_DDZX9692;Diodes;Zener <=10V; 6.80V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9692  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.71\r
-.MODEL DF D ( IS=18.2p RS=32.7 N=1.10\r
-+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.64f RS=23.0 N=0.149 )\r
-.ENDS\r
-\r
-*SRC=DDZX9692TS;DI_DDZX9692TS;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9692TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.71\r
-.MODEL DF D ( IS=12.1p RS=31.5 N=1.10\r
-+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.42f RS=23.0 N=0.149 )\r
-.ENDS\r
-\r
-*SRC=DDZX9692W;DI_DDZX9692W;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9692W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.71\r
-.MODEL DF D ( IS=12.1p RS=31.5 N=1.10\r
-+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.42f RS=23.0 N=0.149 )\r
-.ENDS\r
-\r
-*SRC=DDZX9693;DI_DDZX9693;Diodes;Zener <=10V; 7.50V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9693  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.41\r
-.MODEL DF D ( IS=16.5p RS=32.4 N=1.10\r
-+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.30f RS=23.0 N=0.149 )\r
-.ENDS\r
-\r
-*SRC=DDZX9693TS;DI_DDZX9693TS;Diodes;Zener <=10V; 7.50V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9693TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.41\r
-.MODEL DF D ( IS=11.0p RS=31.2 N=1.10\r
-+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.20f RS=23.0 N=0.149 )\r
-.ENDS\r
-\r
-*SRC=DDZX9693W;DI_DDZX9693W;Diodes;Zener <=10V; 7.50V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9693W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.41\r
-.MODEL DF D ( IS=11.0p RS=31.2 N=1.10\r
-+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.20f RS=23.0 N=0.149 )\r
-.ENDS\r
-\r
-*SRC=DDZX9694;DI_DDZX9694;Diodes;Zener <=10V; 8.20V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9694  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.06\r
-.MODEL DF D ( IS=15.1p RS=32.1 N=1.10\r
-+ CJO=47.6p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.01f RS=34.5 N=0.223 )\r
-.ENDS\r
-\r
-*SRC=DDZX9694TS;DI_DDZX9694TS;Diodes;Zener <=10V; 8.20V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9694TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.06\r
-.MODEL DF D ( IS=10.0p RS=31.0 N=1.10\r
-+ CJO=47.6p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.01f RS=34.5 N=0.223 )\r
-.ENDS\r
-\r
-*SRC=DDZX9694W;DI_DDZX9694W;Diodes;Zener <=10V; 8.20V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9694W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.06\r
-.MODEL DF D ( IS=10.0p RS=31.0 N=1.10\r
-+ CJO=47.6p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.01f RS=34.5 N=0.223 )\r
-.ENDS\r
-\r
-*SRC=DDZX9696;DI_DDZX9696;Diodes;Zener <=10V; 9.10V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9696  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.90\r
-.MODEL DF D ( IS=13.6p RS=31.8 N=1.10\r
-+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.72f RS=50.6 N=0.327 )\r
-.ENDS\r
-\r
-*SRC=DDZX9696TS;DI_DDZX9696TS;Diodes;Zener <=10V; 9.10V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9696TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.89\r
-.MODEL DF D ( IS=9.05p RS=30.7 N=1.10\r
-+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.81f RS=50.6 N=0.327 )\r
-.ENDS\r
-\r
-*SRC=DDZX9696W;DI_DDZX9696W;Diodes;Zener <=10V; 9.10V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9696W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.89\r
-.MODEL DF D ( IS=9.05p RS=30.7 N=1.10\r
-+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.81f RS=50.6 N=0.327 )\r
-.ENDS\r
-\r
-*SRC=DDZX9697;DI_DDZX9697;Diodes;Zener <=10V; 10.0V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9697  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.72\r
-.MODEL DF D ( IS=12.4p RS=31.6 N=1.10\r
-+ CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.47f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9697TS;DI_DDZX9697TS;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9697TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.72\r
-.MODEL DF D ( IS=8.24p RS=30.4 N=1.10\r
-+ CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.65f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9697W;DI_DDZX9697W;Diodes;Zener <=10V; 10.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9697W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.72\r
-.MODEL DF D ( IS=8.24p RS=30.4 N=1.10\r
-+ CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.65f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9699;DI_DDZX9699;Diodes;Zener 10V-50V; 12.0V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9699  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 11.7\r
-.MODEL DF D ( IS=10.3p RS=31.0 N=1.10\r
-+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.06f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9699TS;DI_DDZX9699TS;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9699TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 11.7\r
-.MODEL DF D ( IS=6.87p RS=29.9 N=1.10\r
-+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.37f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9699W;DI_DDZX9699W;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9699W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 11.7\r
-.MODEL DF D ( IS=6.87p RS=29.9 N=1.10\r
-+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.37f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9700;DI_DDZX9700;Diodes;Zener 10V-50V; 13.0V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9700  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.7\r
-.MODEL DF D ( IS=9.51p RS=30.8 N=1.10\r
-+ CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.90f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9700TS;DI_DDZX9700TS;Diodes;Zener 10V-50V; 13.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9700TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.7\r
-.MODEL DF D ( IS=6.34p RS=29.7 N=1.10\r
-+ CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.27f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9700W;DI_DDZX9700W;Diodes;Zener 10V-50V; 13.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9700W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.7\r
-.MODEL DF D ( IS=6.34p RS=29.7 N=1.10\r
-+ CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.27f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9702;DI_DDZX9702;Diodes;Zener 10V-50V; 15.0V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9702  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 14.7\r
-.MODEL DF D ( IS=8.24p RS=30.4 N=1.10\r
-+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.65f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9702TS;DI_DDZX9702TS;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9702TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 14.7\r
-.MODEL DF D ( IS=5.49p RS=29.3 N=1.10\r
-+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.10f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9702W;DI_DDZX9702W;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9702W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 14.7\r
-.MODEL DF D ( IS=5.49p RS=29.3 N=1.10\r
-+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.10f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9703;DI_DDZX9703;Diodes;Zener 10V-50V; 16.0V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9703  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.7\r
-.MODEL DF D ( IS=7.72p RS=30.2 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.54f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9703TS;DI_DDZX9703TS;Diodes;Zener 10V-50V; 16.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9703TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.7\r
-.MODEL DF D ( IS=5.15p RS=29.1 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.03f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9703W;DI_DDZX9703W;Diodes;Zener 10V-50V; 16.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9703W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.7\r
-.MODEL DF D ( IS=5.15p RS=29.1 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.03f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9705;DI_DDZX9705;Diodes;Zener 10V-50V; 18.0V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9705  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.7\r
-.MODEL DF D ( IS=6.87p RS=29.9 N=1.10\r
-+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.37f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9705TS;DI_DDZX9705TS;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9705TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.7\r
-.MODEL DF D ( IS=4.58p RS=28.7 N=1.10\r
-+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=9.16e-016 RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9705W;DI_DDZX9705W;Diodes;Zener 10V-50V; 18.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9705W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.7\r
-.MODEL DF D ( IS=4.58p RS=28.7 N=1.10\r
-+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=9.16e-016 RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9707;DI_DDZX9707;Diodes;Zener 10V-50V; 20.0V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9707  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.7\r
-.MODEL DF D ( IS=6.18p RS=29.6 N=1.10\r
-+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.24f RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9707TS;DI_DDZX9707TS;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9707TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.7\r
-.MODEL DF D ( IS=4.12p RS=28.4 N=1.10\r
-+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.24e-016 RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9707W;DI_DDZX9707W;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9707W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.7\r
-.MODEL DF D ( IS=4.12p RS=28.4 N=1.10\r
-+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.24e-016 RS=69.0 N=0.446 )\r
-.ENDS\r
-\r
-*SRC=DDZX9708;DI_DDZX9708;Diodes;Zener 10V-50V; 22.0V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9708  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.6\r
-.MODEL DF D ( IS=5.62p RS=29.3 N=1.10\r
-+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.12f RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZX9708TS;DI_DDZX9708TS;Diodes;Zener 10V-50V; 22.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9708TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.6\r
-.MODEL DF D ( IS=3.75p RS=28.2 N=1.10\r
-+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=7.49e-016 RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZX9708W;DI_DDZX9708W;Diodes;Zener 10V-50V; 22.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9708W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.6\r
-.MODEL DF D ( IS=3.75p RS=28.2 N=1.10\r
-+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=7.49e-016 RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZX9709;DI_DDZX9709;Diodes;Zener 10V-50V; 24.0V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9709  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 23.6\r
-.MODEL DF D ( IS=5.15p RS=29.1 N=1.10\r
-+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.03f RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZX9709TS;DI_DDZX9709TS;Diodes;Zener 10V-50V; 24.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9709TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 23.6\r
-.MODEL DF D ( IS=3.43p RS=27.9 N=1.10\r
-+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.87e-016 RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZX9709W;DI_DDZX9709W;Diodes;Zener 10V-50V; 24.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9709W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 23.6\r
-.MODEL DF D ( IS=3.43p RS=27.9 N=1.10\r
-+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.87e-016 RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZX9711;DI_DDZX9711;Diodes;Zener 10V-50V; 27.0V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9711  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 26.6\r
-.MODEL DF D ( IS=4.58p RS=28.7 N=1.10\r
-+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=9.16e-016 RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZX9711TS;DI_DDZX9711TS;Diodes;Zener 10V-50V; 27.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9711TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 26.6\r
-.MODEL DF D ( IS=3.05p RS=27.6 N=1.10\r
-+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.10e-016 RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZX9711W;DI_DDZX9711W;Diodes;Zener 10V-50V; 27.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9711W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 26.6\r
-.MODEL DF D ( IS=3.05p RS=27.6 N=1.10\r
-+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.10e-016 RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZX9712;DI_DDZX9712;Diodes;Zener 10V-50V; 28.0V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9712  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.6\r
-.MODEL DF D ( IS=4.41p RS=28.6 N=1.10\r
-+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.83e-016 RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZX9712TS;DI_DDZX9712TS;Diodes;Zener 10V-50V; 28.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9712TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.6\r
-.MODEL DF D ( IS=2.94p RS=27.5 N=1.10\r
-+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.89e-016 RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZX9712W;DI_DDZX9712W;Diodes;Zener 10V-50V; 28.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9712W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.6\r
-.MODEL DF D ( IS=2.94p RS=27.5 N=1.10\r
-+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.89e-016 RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZX9713;DI_DDZX9713;Diodes;Zener 10V-50V; 30.0V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9713  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 29.6\r
-.MODEL DF D ( IS=4.12p RS=28.4 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.24e-016 RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZX9713TS;DI_DDZX9713TS;Diodes;Zener 10V-50V; 30.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9713TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 29.6\r
-.MODEL DF D ( IS=2.75p RS=27.3 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.49e-016 RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZX9713W;DI_DDZX9713W;Diodes;Zener 10V-50V; 30.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9713W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 29.6\r
-.MODEL DF D ( IS=2.75p RS=27.3 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.49e-016 RS=92.0 N=0.594 )\r
-.ENDS\r
-\r
-*SRC=DDZX9714;DI_DDZX9714;Diodes;Zener 10V-50V; 33.0V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9714  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 31.0\r
-.MODEL DF D ( IS=3.75p RS=28.2 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=7.49e-016 RS=1.35k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9714TS;DI_DDZX9714TS;Diodes;Zener 10V-50V; 33.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9714TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 31.0\r
-.MODEL DF D ( IS=2.50p RS=27.0 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.99e-016 RS=1.35k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9714W;DI_DDZX9714W;Diodes;Zener 10V-50V; 33.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9714W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 31.0\r
-.MODEL DF D ( IS=2.50p RS=27.0 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.99e-016 RS=1.35k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9715;DI_DDZX9715;Diodes;Zener 10V-50V; 36.0V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9715  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 33.8\r
-.MODEL DF D ( IS=3.43p RS=27.9 N=1.10\r
-+ CJO=13.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.87e-016 RS=4.45k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9715TS;DI_DDZX9715TS;Diodes;Zener 10V-50V; 36.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9715TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 34.0\r
-.MODEL DF D ( IS=2.29p RS=26.8 N=1.10\r
-+ CJO=13.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.58e-016 RS=1.45k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9715W;DI_DDZX9715W;Diodes;Zener 10V-50V; 36.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9715W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 34.0\r
-.MODEL DF D ( IS=2.29p RS=26.8 N=1.10\r
-+ CJO=13.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.58e-016 RS=1.45k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9716;DI_DDZX9716;Diodes;Zener 10V-50V; 39.0V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9716  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.8\r
-.MODEL DF D ( IS=3.17p RS=27.7 N=1.10\r
-+ CJO=24.5p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.34e-016 RS=4.45k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9716TS;DI_DDZX9716TS;Diodes;Zener 10V-50V; 39.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9716TS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.9\r
-.MODEL DF D ( IS=2.11p RS=26.5 N=1.10\r
-+ CJO=12.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.23e-016 RS=1.45k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9716W;DI_DDZX9716W;Diodes;Zener 10V-50V; 39.0V  0.200W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9716W  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.9\r
-.MODEL DF D ( IS=2.11p RS=26.5 N=1.10\r
-+ CJO=12.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.23e-016 RS=1.45k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9717;DI_DDZX9717;Diodes;Zener 10V-50V; 43.0V  0.300W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9717  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 40.7\r
-.MODEL DF D ( IS=2.87p RS=27.4 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.75e-016 RS=6.25k N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9V1C;DI_DDZX9V1C;Diodes;Zener <=10V; 9.10V  0.300W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9V1C  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.72\r
-.MODEL DF D ( IS=13.6p RS=31.8 N=1.10\r
-+ CJO=41.0p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.72f RS=4.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9V1CTS;DI_DDZX9V1CTS;Diodes;Zener <=10V; 9.10V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9V1CTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.68\r
-.MODEL DF D ( IS=9.05p RS=30.7 N=1.10\r
-+ CJO=41.0p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.81f RS=4.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DDZX9V1CW;DI_DDZX9V1CW;Diodes;Zener <=10V; 9.10V  0.200W   Diodes Inc. ZENER\r
-*SYM=HZEN\r
-.SUBCKT DI_DDZX9V1CW  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.68\r
-.MODEL DF D ( IS=9.05p RS=30.7 N=1.10\r
-+ CJO=41.0p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.81f RS=4.11 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=DZ23C10;DI_DZ23C10;Diodes;Zener <=10V; 10.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C10  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.35\r
-.MODEL DF D ( IS=12.4p RS=31.6 N=1.10\r
-+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C11;DI_DZ23C11;Diodes;Zener 10V-50V; 11.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C11  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.79\r
-.MODEL DF D ( IS=11.2p RS=31.3 N=1.10\r
-+ CJO=41.5p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C12;DI_DZ23C12;Diodes;Zener 10V-50V; 12.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C12  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.78\r
-.MODEL DF D ( IS=10.3p RS=31.0 N=1.10\r
-+ CJO=39.0p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C13;DI_DZ23C13;Diodes;Zener 10V-50V; 13.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C13  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 10.7\r
-.MODEL DF D ( IS=9.51p RS=30.8 N=1.10\r
-+ CJO=37.7p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C15;DI_DZ23C15;Diodes;Zener 10V-50V; 15.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C15  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.7\r
-.MODEL DF D ( IS=8.24p RS=30.4 N=1.10\r
-+ CJO=31.4p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C16;DI_DZ23C16;Diodes;Zener 10V-50V; 16.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C16  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 13.6\r
-.MODEL DF D ( IS=7.72p RS=30.2 N=1.10\r
-+ CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C18;DI_DZ23C18;Diodes;Zener 10V-50V; 18.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C18  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.6\r
-.MODEL DF D ( IS=6.87p RS=29.9 N=1.10\r
-+ CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C20;DI_DZ23C20;Diodes;Zener 10V-50V; 20.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C20  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.6\r
-.MODEL DF D ( IS=6.18p RS=29.6 N=1.10\r
-+ CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C22;DI_DZ23C22;Diodes;Zener 10V-50V; 22.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C22  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.5\r
-.MODEL DF D ( IS=5.62p RS=29.3 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C24;DI_DZ23C24;Diodes;Zener 10V-50V; 24.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C24  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.4\r
-.MODEL DF D ( IS=5.15p RS=29.1 N=1.10\r
-+ CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C27;DI_DZ23C27;Diodes;Zener 10V-50V; 27.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C27  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 24.4\r
-.MODEL DF D ( IS=4.58p RS=28.7 N=1.10\r
-+ CJO=20.7p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C2V7;DI_DZ23C2V7;Diodes;Zener <=10V; 2.70V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C2V7  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.263\r
-.MODEL DF D ( IS=45.8p RS=35.3 N=1.10\r
-+ CJO=450p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C30;DI_DZ23C30;Diodes;Zener 10V-50V; 30.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C30  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.4\r
-.MODEL DF D ( IS=4.12p RS=28.4 N=1.10\r
-+ CJO=19.5p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C33;DI_DZ23C33;Diodes;Zener 10V-50V; 33.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C33  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 30.4\r
-.MODEL DF D ( IS=3.75p RS=28.2 N=1.10\r
-+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C36;DI_DZ23C36;Diodes;Zener 10V-50V; 36.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C36  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 33.3\r
-.MODEL DF D ( IS=3.43p RS=27.9 N=1.10\r
-+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C39;DI_DZ23C39;Diodes;Zener 10V-50V; 39.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C39  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.3\r
-.MODEL DF D ( IS=3.17p RS=27.7 N=1.10\r
-+ CJO=17.0p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C3V0;DI_DZ23C3V0;Diodes;Zener <=10V; 3.00V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C3V0  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.495\r
-.MODEL DF D ( IS=41.2p RS=35.0 N=1.10\r
-+ CJO=417p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C3V3;DI_DZ23C3V3;Diodes;Zener <=10V; 3.30V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C3V3  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.787\r
-.MODEL DF D ( IS=37.5p RS=34.7 N=1.10\r
-+ CJO=397p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C3V6;DI_DZ23C3V6;Diodes;Zener <=10V; 3.60V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C3V6 1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.08\r
-.MODEL DF D ( IS=34.3p RS=34.5 N=1.10\r
-+ CJO=384p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C3V9;DI_DZ23C3V9;Diodes;Zener <=10V; 3.60V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C3V9  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.08\r
-.MODEL DF D ( IS=34.3p RS=34.5 N=1.10\r
-+ CJO=370p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C43;DI_DZ23C43;Diodes;Zener 10V-50V; 43.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C43  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 40.3\r
-.MODEL DF D ( IS=2.87p RS=27.4 N=1.10\r
-+ CJO=16.7p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C47;DI_DZ23C47;Diodes;Zener 10V-50V; 47.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C47  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 44.3\r
-.MODEL DF D ( IS=2.63p RS=27.2 N=1.10\r
-+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C4V3;DI_DZ23C4V3;Diodes;Zener <=10V; 4.30V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C4V3  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.77\r
-.MODEL DF D ( IS=28.7p RS=34.0 N=1.10\r
-+ CJO=357p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C4V7;DI_DZ23C4V7;Diodes;Zener <=10V; 4.70V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C4V7  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.24\r
-.MODEL DF D ( IS=26.3p RS=33.7 N=1.10\r
-+ CJO=350p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C51;DI_DZ23C51;Diodes;Zener >50V; 51.0V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C51  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 48.2\r
-.MODEL DF D ( IS=2.42p RS=26.9 N=1.10\r
-+ CJO=16.2p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C5V1;DI_DZ23C5V1;Diodes;Zener <=10V; 5.10V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C5V1  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.73\r
-.MODEL DF D ( IS=24.2p RS=33.5 N=1.10\r
-+ CJO=132p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C5V6;DI_DZ23C5V6;Diodes;Zener <=10V; 5.60V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C5V6  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.32\r
-.MODEL DF D ( IS=22.1p RS=33.2 N=1.10\r
-+ CJO=102p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C6V2;DI_DZ23C6V2;Diodes;Zener <=10V; 6.20V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C6V2  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.12\r
-.MODEL DF D ( IS=19.9p RS=32.9 N=1.10\r
-+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C6V8;DI_DZ23C6V8;Diodes;Zener <=10V; 6.80V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C6V8  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.93\r
-.MODEL DF D ( IS=18.2p RS=32.7 N=1.10\r
-+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C7V5;DI_DZ23C7V5;Diodes;Zener <=10V; 7.50V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C7V5  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.74\r
-.MODEL DF D ( IS=16.5p RS=32.4 N=1.10\r
-+ CJO=59.5p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C8V2;DI_DZ23C8V2;Diodes;Zener <=10V; 8.20V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C8V2  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.43\r
-.MODEL DF D ( IS=15.1p RS=32.1 N=1.10\r
-+ CJO=54.2p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=DZ23C9V1;DI_DZ23C9V1;Diodes;Zener <=10V; 9.10V  0.300W   Diodes Inc. Per node.  Device contains two\r
-*SYM=HZEN\r
-.SUBCKT DI_DZ23C9V1  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.00\r
-.MODEL DF D ( IS=13.6p RS=31.8 N=1.10\r
-+ CJO=48.9p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5221B;DI_MMBZ5221B;Diodes;Zener <=10V; 2.40V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5221B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0\r
-.MODEL DF D ( IS=60.1p RS=36.1 N=1.10\r
-+ CJO=205p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=12.0f RS=26.1 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=MMBZ5221BS;DI_MMBZ5221BS;Diodes;Zener <=10V; 2.40V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.\r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5221BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0\r
-.MODEL DF D ( IS=34.3p RS=34.5 N=1.10\r
-+ CJO=340p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5221BT;DI_MMBZ5221BT;Diodes;Zener <=10V; 2.40V  0.150W   Diodes\r
-Inc. -\r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5221BT  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0\r
-.MODEL DF D ( IS=25.7p RS=33.7 N=1.10\r
-+ CJO=205p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5221BTS;DI_MMBZ5221BTS;Diodes;Zener <=10V; 2.40V  0.200W   Diodes\r
-Inc. This model covers only one element.  There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5221BTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0\r
-.MODEL DF D ( IS=34.3p RS=34.5 N=1.10\r
-+ CJO=340p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5221BW;DI_MMBZ5221BW;Diodes;Zener <=10V; 2.40V  0.200W\r
-      Diodes Inc.\r
-      *SYM=HZEN\r
-      .SUBCKT DI_MMBZ5221BW  1 2\r
-      *        Terminals    A   K\r
-      D1 1 2 DF\r
-      DZ 3 1 DR\r
-      VZ 2 3 0\r
-      .MODEL DF D ( IS=34.3p RS=34.5 N=1.10\r
-      + CJO=205p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5223B;DI_MMBZ5223B;Diodes;Zener <=10V; 2.70V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5223B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0\r
-.MODEL DF D ( IS=53.4p RS=35.7 N=1.10\r
-+ CJO=172p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=10.7f RS=26.1 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=MMBZ5223BS;DI_MMBZ5223BS;Diodes;Zener <=10V; 2.70V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.\r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5223BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0\r
-.MODEL DF D ( IS=30.5p RS=34.1 N=1.10\r
-+ CJO=275p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5223BT;DI_MMBZ5223BT;Diodes;Zener <=10V; 2.70V  0.150W   Diodes\r
-Inc. -\r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5223BT  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0\r
-.MODEL DF D ( IS=22.9p RS=33.3 N=1.10\r
-+ CJO=172p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5223BTS;DI_MMBZ5223BTS;Diodes;Zener <=10V; 2.70V  0.200W   Diodes\r
-Inc. This model covers only one element.  There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5223BTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0\r
-.MODEL DF D ( IS=30.5p RS=34.1 N=1.10\r
-+ CJO=275p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5223BW;DI_MMBZ5223BW;Diodes;Zener <=10V; 2.70V  0.200W\r
-      Diodes Inc. -\r
-      *SYM=HZEN\r
-      .SUBCKT DI_MMBZ5223BW  1 2\r
-      *        Terminals    A   K\r
-      D1 1 2 DF\r
-      DZ 3 1 DR\r
-      VZ 2 3 0\r
-      .MODEL DF D ( IS=30.5p RS=34.1 N=1.10\r
-      + CJO=172p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5225B;DI_MMBZ5225B;Diodes;Zener <=10V; 3.00V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5225B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.274\r
-.MODEL DF D ( IS=48.1p RS=35.4 N=1.10\r
-+ CJO=147p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=9.61f RS=26.1 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=MMBZ5225BS;DI_MMBZ5225BS;Diodes;Zener <=10V; 3.00V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.\r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5225BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.230\r
-.MODEL DF D ( IS=27.5p RS=33.8 N=1.10\r
-+ CJO=240p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5225BT;DI_MMBZ5225BT;Diodes;Zener <=10V; 3.00V  0.150W   Diodes\r
-Inc. -\r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5225BT  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.208\r
-.MODEL DF D ( IS=20.6p RS=33.0 N=1.10\r
-+ CJO=147p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5225BTS;DI_MMBZ5225BTS;Diodes;Zener <=10V; 3.00V  0.200W   Diodes\r
-Inc. This model covers only one element.  There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5225BTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.230\r
-.MODEL DF D ( IS=27.5p RS=33.8 N=1.10\r
-+ CJO=240p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5225BW;DI_MMBZ5225BW;Diodes;Zener <=10V; 3.00V  0.200W\r
-      Diodes Inc. -\r
-      *SYM=HZEN\r
-      .SUBCKT DI_MMBZ5225BW  1 2\r
-      *        Terminals    A   K\r
-      D1 1 2 DF\r
-      DZ 3 1 DR\r
-      VZ 2 3 0.230\r
-      .MODEL DF D ( IS=27.5p RS=33.8 N=1.10\r
-      + CJO=147p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5226B;DI_MMBZ5226B;Diodes;Zener <=10V; 3.30V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5226B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.606\r
-.MODEL DF D ( IS=43.7p RS=35.2 N=1.10\r
-+ CJO=127p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.74f RS=24.1 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=MMBZ5226BS;DI_MMBZ5226BS;Diodes;Zener <=10V; 3.30V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.\r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5226BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.563\r
-.MODEL DF D ( IS=25.0p RS=33.6 N=1.10\r
-+ CJO=230p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5226BT;DI_MMBZ5226BT;Diodes;Zener <=10V; 3.30V  0.150W   Diodes\r
-Inc. -\r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5226BT  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.541\r
-.MODEL DF D ( IS=18.7p RS=32.7 N=1.10\r
-+ CJO=127p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5226BTS;DI_MMBZ5226BTS;Diodes;Zener <=10V; 3.30V  0.200W   Diodes\r
-Inc. This model covers only one element.  There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5226BTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.563\r
-.MODEL DF D ( IS=25.0p RS=33.6 N=1.10\r
-+ CJO=230p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5226BW;DI_MMBZ5226BW;Diodes;Zener <=10V; 3.30V  0.200W\r
-      Diodes Inc. -\r
-      *SYM=HZEN\r
-      .SUBCKT DI_MMBZ5226BW  1 2\r
-      *        Terminals    A   K\r
-      D1 1 2 DF\r
-      DZ 3 1 DR\r
-      VZ 2 3 0.563\r
-      .MODEL DF D ( IS=25.0p RS=33.6 N=1.10\r
-      + CJO=127p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5227B;DI_MMBZ5227B;Diodes;Zener <=10V; 3.60V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5227B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.980\r
-.MODEL DF D ( IS=40.1p RS=34.9 N=1.10\r
-+ CJO=112p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.01f RS=20.1 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=MMBZ5227BS;DI_MMBZ5227BS;Diodes;Zener <=10V; 3.60V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.\r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5227BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.936\r
-.MODEL DF D ( IS=22.9p RS=33.3 N=1.10\r
-+ CJO=190p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5227BT;DI_MMBZ5227BT;Diodes;Zener <=10V; 3.60V  0.150W   Diodes\r
-Inc. -\r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5227BT  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.914\r
-.MODEL DF D ( IS=17.2p RS=32.5 N=1.10\r
-+ CJO=112p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5227BTS;DI_MMBZ5227BTS;Diodes;Zener <=10V; 3.60V  0.200W   Diodes\r
-Inc. This model covers only one element.  There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5227BTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.936\r
-.MODEL DF D ( IS=22.9p RS=33.3 N=1.10\r
-+ CJO=190p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5227BW;DI_MMBZ5227BW;Diodes;Zener <=10V; 3.60V  0.200W\r
-      Diodes Inc. -\r
-      *SYM=HZEN\r
-      .SUBCKT DI_MMBZ5227BW  1 2\r
-      *        Terminals    A   K\r
-      D1 1 2 DF\r
-      DZ 3 1 DR\r
-      VZ 2 3 0.936\r
-      .MODEL DF D ( IS=22.9p RS=33.3 N=1.10\r
-      + CJO=112p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5228B;DI_MMBZ5228B;Diodes;Zener <=10V; 3.90V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5228B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.29\r
-.MODEL DF D ( IS=37.0p RS=34.7 N=1.10\r
-+ CJO=99.1p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=7.39f RS=19.1 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=MMBZ5228BS;DI_MMBZ5228BS;Diodes;Zener <=10V; 3.90V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.\r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5228BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.25\r
-.MODEL DF D ( IS=21.1p RS=33.1 N=1.10\r
-+ CJO=180p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5228BT;DI_MMBZ5228BT;Diodes;Zener <=10V; 3.90V  0.150W   Diodes\r
-Inc. -\r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5228BT  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.23\r
-.MODEL DF D ( IS=15.8p RS=32.3 N=1.10\r
-+ CJO=99.1p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5228BTS;DI_MMBZ5228BTS;Diodes;Zener <=10V; 3.90V  0.200W   Diodes\r
-Inc. This model covers only one element.  There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5228BTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.25\r
-.MODEL DF D ( IS=21.1p RS=33.1 N=1.10\r
-+ CJO=180p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5228BW;DI_MMBZ5228BW;Diodes;Zener <=10V; 3.90V  0.200W\r
-      Diodes Inc. -\r
-      *SYM=HZEN\r
-      .SUBCKT DI_MMBZ5228BW  1 2\r
-      *        Terminals    A   K\r
-      D1 1 2 DF\r
-      DZ 3 1 DR\r
-      VZ 2 3 1.25\r
-      .MODEL DF D ( IS=21.1p RS=33.1 N=1.10\r
-      + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5229B;DI_MMBZ5229B;Diodes;Zener <=10V; 4.30V  0.350W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5229B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.71\r
-.MODEL DF D ( IS=33.5p RS=34.4 N=1.10\r
-+ CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.71f RS=18.1 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=MMBZ5229BS;DI_MMBZ5229BS;Diodes;Zener <=10V; 4.30V  0.200W   Diodes Inc. This model covers only one element.  There are two elements per pkg.\r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5229BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.66\r
-.MODEL DF D ( IS=19.2p RS=32.8 N=1.10\r
-+ CJO=170p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5229BT;DI_MMBZ5229BT;Diodes;Zener <=10V; 4.30V  0.150W   Diodes\r
-Inc. -\r
-*SYM=HZEN\r
-.SUBCKT DI_MMBZ5229BT  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.64\r
-.MODEL DF D ( IS=14.4p RS=32.0 N=1.10\r
-+ CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMBZ5229BTS;DI_MMBZ5229BTS;Diodes;Zener <=10V; 4.30V  0.200W   Diodes\r
-Inc. This model covers only one element.  There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5229BTS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.66\r
-.MODEL DF D ( IS=19.2p RS=32.8 N=1.10\r
-+ CJO=170p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-\r
-*SRC=MMSZ5221B;DI_MMSZ5221B;Diodes;Zener <=10V; 2.40V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5221B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0\r
-.MODEL DF D ( IS=85.8p RS=37.1 N=1.10\r
-+ CJO=794p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5221BS;DI_MMSZ5221BS;Diodes;Zener <=10V; 2.40V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5221BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0\r
-.MODEL DF D ( IS=85.8p RS=37.1 N=1.10\r
-+ CJO=794p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5223B;DI_MMSZ5223B;Diodes;Zener <=10V; 2.70V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5223B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.75m\r
-.MODEL DF D ( IS=76.3p RS=36.7 N=1.10\r
-+ CJO=463p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5223BS;DI_MMSZ5223BS;Diodes;Zener <=10V; 2.70V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5223BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.75m\r
-.MODEL DF D ( IS=76.3p RS=36.7 N=1.10\r
-+ CJO=463p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5225B;DI_MMSZ5225B;Diodes;Zener <=10V; 3.00V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5225B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.302\r
-.MODEL DF D ( IS=68.7p RS=36.4 N=1.10\r
-+ CJO=397p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5225BS;DI_MMSZ5225BS;Diodes;Zener <=10V; 3.00V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5225BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.302\r
-.MODEL DF D ( IS=68.7p RS=36.4 N=1.10\r
-+ CJO=397p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5226B;DI_MMSZ5226B;Diodes;Zener <=10V; 3.30V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5226B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.634\r
-.MODEL DF D ( IS=62.4p RS=36.2 N=1.10\r
-+ CJO=251p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5226BS;DI_MMSZ5226BS;Diodes;Zener <=10V; 3.30V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5226BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.634\r
-.MODEL DF D ( IS=62.4p RS=36.2 N=1.10\r
-+ CJO=251p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5227B;DI_MMSZ5227B;Diodes;Zener <=10V; 3.60V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5227B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.01\r
-.MODEL DF D ( IS=57.2p RS=35.9 N=1.10\r
-+ CJO=238p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5227BS;DI_MMSZ5227BS;Diodes;Zener <=10V; 3.60V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5227BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.01\r
-.MODEL DF D ( IS=57.2p RS=35.9 N=1.10\r
-+ CJO=238p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5228B;DI_MMSZ5228B;Diodes;Zener <=10V; 3.90V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5228B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.32\r
-.MODEL DF D ( IS=52.8p RS=35.7 N=1.10\r
-+ CJO=159p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5228BS;DI_MMSZ5228BS;Diodes;Zener <=10V; 3.90V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5228BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.32\r
-.MODEL DF D ( IS=52.8p RS=35.7 N=1.10\r
-+ CJO=159p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5229B;DI_MMSZ5229B;Diodes;Zener <=10V; 4.30V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5229B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.73\r
-.MODEL DF D ( IS=47.9p RS=35.4 N=1.10\r
-+ CJO=145p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5229BS;DI_MMSZ5229BS;Diodes;Zener <=10V; 4.30V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5229BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.73\r
-.MODEL DF D ( IS=47.9p RS=35.4 N=1.10\r
-+ CJO=145p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5230B;DI_MMSZ5230B;Diodes;Zener <=10V; 4.70V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5230B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.19\r
-.MODEL DF D ( IS=43.8p RS=35.2 N=1.10\r
-+ CJO=139p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5230BS;DI_MMSZ5230BS;Diodes;Zener <=10V; 4.70V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5230BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.19\r
-.MODEL DF D ( IS=43.8p RS=35.2 N=1.10\r
-+ CJO=139p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5231B;DI_MMSZ5231B;Diodes;Zener <=10V; 5.10V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5231B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.62\r
-.MODEL DF D ( IS=40.4p RS=34.9 N=1.10\r
-+ CJO=132p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5231BS;DI_MMSZ5231BS;Diodes;Zener <=10V; 5.10V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5231BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.62\r
-.MODEL DF D ( IS=40.4p RS=34.9 N=1.10\r
-+ CJO=132p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5232B;DI_MMSZ5232B;Diodes;Zener <=10V; 5.60V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5232B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.23\r
-.MODEL DF D ( IS=36.8p RS=34.7 N=1.10\r
-+ CJO=106p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5232BS;DI_MMSZ5232BS;Diodes;Zener <=10V; 5.60V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5232BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.23\r
-.MODEL DF D ( IS=36.8p RS=34.7 N=1.10\r
-+ CJO=106p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5233B;DI_MMSZ5233B;Diodes;Zener <=10V; 6.00V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5233B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.71\r
-.MODEL DF D ( IS=34.3p RS=34.5 N=1.10\r
-+ CJO=83.3p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5233BS;DI_MMSZ5233BS;Diodes;Zener <=10V; 6.00V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5233BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.71\r
-.MODEL DF D ( IS=34.3p RS=34.5 N=1.10\r
-+ CJO=83.3p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5234B;DI_MMSZ5234B;Diodes;Zener <=10V; 6.20V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5234B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.91\r
-.MODEL DF D ( IS=33.2p RS=34.4 N=1.10\r
-+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5234BS;DI_MMSZ5234BS;Diodes;Zener <=10V; 6.20V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5234BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.91\r
-.MODEL DF D ( IS=33.2p RS=34.4 N=1.10\r
-+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5235B;DI_MMSZ5235B;Diodes;Zener <=10V; 6.80V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5235B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 4.56\r
-.MODEL DF D ( IS=30.3p RS=34.1 N=1.10\r
-+ CJO=71.4p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5235BS;DI_MMSZ5235BS;Diodes;Zener <=10V; 6.80V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5235BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 4.56\r
-.MODEL DF D ( IS=30.3p RS=34.1 N=1.10\r
-+ CJO=71.4p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5236B;DI_MMSZ5236B;Diodes;Zener <=10V; 7.50V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5236B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.21\r
-.MODEL DF D ( IS=27.5p RS=33.8 N=1.10\r
-+ CJO=58.2p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5236BS;DI_MMSZ5236BS;Diodes;Zener <=10V; 7.50V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5236BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.21\r
-.MODEL DF D ( IS=27.5p RS=33.8 N=1.10\r
-+ CJO=58.2p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5237B;DI_MMSZ5237B;Diodes;Zener <=10V; 8.20V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5237B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.86\r
-.MODEL DF D ( IS=25.1p RS=33.6 N=1.10\r
-+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5237BS;DI_MMSZ5237BS;Diodes;Zener <=10V; 8.20V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5237BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.86\r
-.MODEL DF D ( IS=25.1p RS=33.6 N=1.10\r
-+ CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5238B;DI_MMSZ5238B;Diodes;Zener <=10V; 8.70V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5238B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.36\r
-.MODEL DF D ( IS=23.7p RS=33.4 N=1.10\r
-+ CJO=51.6p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5238BS;DI_MMSZ5238BS;Diodes;Zener <=10V; 8.70V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5238BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.36\r
-.MODEL DF D ( IS=23.7p RS=33.4 N=1.10\r
-+ CJO=51.6p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5239B;DI_MMSZ5239B;Diodes;Zener <=10V; 9.10V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5239B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.72\r
-.MODEL DF D ( IS=22.6p RS=33.3 N=1.10\r
-+ CJO=50.3p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5239BS;DI_MMSZ5239BS;Diodes;Zener <=10V; 9.10V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5239BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.72\r
-.MODEL DF D ( IS=22.6p RS=33.3 N=1.10\r
-+ CJO=50.3p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5240B;DI_MMSZ5240B;Diodes;Zener <=10V; 10.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5240B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.47\r
-.MODEL DF D ( IS=20.6p RS=33.0 N=1.10\r
-+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5240BS;DI_MMSZ5240BS;Diodes;Zener <=10V; 10.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5240BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.47\r
-.MODEL DF D ( IS=20.6p RS=33.0 N=1.10\r
-+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5241B;DI_MMSZ5241B;Diodes;Zener 10V-50V; 11.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5241B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.36\r
-.MODEL DF D ( IS=18.7p RS=32.7 N=1.10\r
-+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5241BS;DI_MMSZ5241BS;Diodes;Zener 10V-50V; 11.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5241BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.36\r
-.MODEL DF D ( IS=18.7p RS=32.7 N=1.10\r
-+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5242B;DI_MMSZ5242B;Diodes;Zener 10V-50V; 12.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5242B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.19\r
-.MODEL DF D ( IS=17.2p RS=32.5 N=1.10\r
-+ CJO=31.4p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5242BS;DI_MMSZ5242BS;Diodes;Zener 10V-50V; 12.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5242BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.19\r
-.MODEL DF D ( IS=17.2p RS=32.5 N=1.10\r
-+ CJO=31.4p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5243B;DI_MMSZ5243B;Diodes;Zener 10V-50V; 13.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5243B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 10.7\r
-.MODEL DF D ( IS=15.8p RS=32.3 N=1.10\r
-+ CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5243BS;DI_MMSZ5243BS;Diodes;Zener 10V-50V; 13.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5243BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 10.7\r
-.MODEL DF D ( IS=15.8p RS=32.3 N=1.10\r
-+ CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5245B;DI_MMSZ5245B;Diodes;Zener 10V-50V; 15.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5245B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.7\r
-.MODEL DF D ( IS=13.7p RS=31.9 N=1.10\r
-+ CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5245BS;DI_MMSZ5245BS;Diodes;Zener 10V-50V; 15.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5245BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.7\r
-.MODEL DF D ( IS=13.7p RS=31.9 N=1.10\r
-+ CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5246B;DI_MMSZ5246B;Diodes;Zener 10V-50V; 16.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5246B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 13.7\r
-.MODEL DF D ( IS=12.9p RS=31.7 N=1.10\r
-+ CJO=27.7p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5246BS;DI_MMSZ5246BS;Diodes;Zener 10V-50V; 16.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5246BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 13.7\r
-.MODEL DF D ( IS=12.9p RS=31.7 N=1.10\r
-+ CJO=27.7p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5248B;DI_MMSZ5248B;Diodes;Zener 10V-50V; 18.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5248B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.7\r
-.MODEL DF D ( IS=11.4p RS=31.3 N=1.10\r
-+ CJO=25.8p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5248BS;DI_MMSZ5248BS;Diodes;Zener 10V-50V; 18.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5248BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.7\r
-.MODEL DF D ( IS=11.4p RS=31.3 N=1.10\r
-+ CJO=25.8p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5250B;DI_MMSZ5250B;Diodes;Zener 10V-50V; 20.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5250B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.7\r
-.MODEL DF D ( IS=10.3p RS=31.0 N=1.10\r
-+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5250BS;DI_MMSZ5250BS;Diodes;Zener 10V-50V; 20.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5250BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.7\r
-.MODEL DF D ( IS=10.3p RS=31.0 N=1.10\r
-+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5251B;DI_MMSZ5251B;Diodes;Zener 10V-50V; 22.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5251B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.7\r
-.MODEL DF D ( IS=9.36p RS=30.8 N=1.10\r
-+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5251BS;DI_MMSZ5251BS;Diodes;Zener 10V-50V; 22.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5251BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.7\r
-.MODEL DF D ( IS=9.36p RS=30.8 N=1.10\r
-+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5252B;DI_MMSZ5252B;Diodes;Zener 10V-50V; 24.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5252B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.7\r
-.MODEL DF D ( IS=8.58p RS=30.5 N=1.10\r
-+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5252BS;DI_MMSZ5252BS;Diodes;Zener 10V-50V; 24.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5252BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.7\r
-.MODEL DF D ( IS=8.58p RS=30.5 N=1.10\r
-+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5254B;DI_MMSZ5254B;Diodes;Zener 10V-50V; 27.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5254B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 24.6\r
-.MODEL DF D ( IS=7.63p RS=30.2 N=1.10\r
-+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5254BS;DI_MMSZ5254BS;Diodes;Zener 10V-50V; 27.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5254BS 1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 24.6\r
-.MODEL DF D ( IS=7.63p RS=30.2 N=1.10\r
-+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5255B;DI_MMSZ5255B;Diodes;Zener 10V-50V; 28.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5255B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 25.6\r
-.MODEL DF D ( IS=7.36p RS=30.1 N=1.10\r
-+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5255BS;DI_MMSZ5255BS;Diodes;Zener 10V-50V; 28.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5255BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 25.6\r
-.MODEL DF D ( IS=7.36p RS=30.1 N=1.10\r
-+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5256B;DI_MMSZ5256B;Diodes;Zener 10V-50V; 30.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5256B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.6\r
-.MODEL DF D ( IS=6.87p RS=29.9 N=1.10\r
-+ CJO=14.5p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5256BS;DI_MMSZ5256BS;Diodes;Zener 10V-50V; 30.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5256BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.6\r
-.MODEL DF D ( IS=6.87p RS=29.9 N=1.10\r
-+ CJO=14.5p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5257B;DI_MMSZ5257B;Diodes;Zener 10V-50V; 33.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5257B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 30.6\r
-.MODEL DF D ( IS=6.24p RS=29.6 N=1.10\r
-+ CJO=14.1p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5257BS;DI_MMSZ5257BS;Diodes;Zener 10V-50V; 33.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5257BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 30.6\r
-.MODEL DF D ( IS=6.24p RS=29.6 N=1.10\r
-+ CJO=14.1p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5258B;DI_MMSZ5258B;Diodes;Zener 10V-50V; 36.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5258B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 33.6\r
-.MODEL DF D ( IS=5.72p RS=29.4 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5258BS;DI_MMSZ5258BS;Diodes;Zener 10V-50V; 36.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5258BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 33.6\r
-.MODEL DF D ( IS=5.72p RS=29.4 N=1.10\r
-+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5259B;DI_MMSZ5259B;Diodes;Zener 10V-50V; 39.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5259B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.6\r
-.MODEL DF D ( IS=5.28p RS=29.1 N=1.10\r
-+ CJO=13.7p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=MMSZ5259BS;DI_MMSZ5259BS;Diodes;Zener 10V-50V; 39.0V  0.500W   Diodes Inc. 500 mW Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_MMSZ5259BS  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.6\r
-.MODEL DF D ( IS=5.28p RS=29.1 N=1.10\r
-+ CJO=13.7p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=QZX363C12;DI_QZX363C12;Diodes;Zener 10V-50V; 12.0V  0.200W   Diodes Inc. Zener Diode Array, quad, one node of four\r
-*SYM=HZEN\r
-.SUBCKT DI_QZX363C12  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.71\r
-.MODEL DF D ( IS=6.87p RS=29.9 N=1.10\r
-+ CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=QZX363C15;DI_QZX363C15;Diodes;Zener 10V-50V; 15.0V  0.200W   Diodes Inc. Zener Diode Array, quad, one node of four\r
-*SYM=HZEN\r
-.SUBCKT DI_QZX363C15  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.7\r
-.MODEL DF D ( IS=5.49p RS=29.3 N=1.10\r
-+ CJO=25.8p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=QZX363C20;DI_QZX363C20;Diodes;Zener 10V-50V; 20.0V  0.200W   Diodes Inc. Zener Diode Array, quad, one node of four\r
-*SYM=HZEN\r
-.SUBCKT DI_QZX363C20  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.5\r
-.MODEL DF D ( IS=4.12p RS=28.4 N=1.10\r
-+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )\r
-\r
-*SRC=QZX363C5V6;DI_QZX363C5V6;Diodes;Zener <=10V; 5.60V  0.200W   Diodes Inc. Zener Diode Array, quad, one node of four\r
-*SYM=HZEN\r
-.SUBCKT DI_QZX363C5V6  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.29\r
-.MODEL DF D ( IS=14.7p RS=32.1 N=1.10\r
-+ CJO=92.6p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=QZX363C6V8;DI_QZX363C6V8;Diodes;Zener <=10V; 6.80V  0.200W   Diodes Inc. Zener Diode Array, quad, one node of four\r
-*SYM=HZEN\r
-.SUBCKT DI_QZX363C6V8  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.15\r
-.MODEL DF D ( IS=12.1p RS=31.5 N=1.10\r
-+ CJO=66.1p VJ=0.750 M=0.330 TT=50.1n )\r
-\r
-*SRC=SMAZ10;DI_SMAZ10;Diodes;Zener <=10V; 10.0V  1.00W   Diodes Inc. Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_SMAZ10  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.20\r
-.MODEL DF D ( IS=41.2p RS=0.823 N=1.10\r
-+ CJO=661p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.24f RS=0.161 N=1.04 )\r
-.ENDS\r
-\r
-*SRC=SMAZ12;DI_SMAZ12;Diodes;Zener 10V-50V; 12.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_SMAZ12  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 10.8\r
-.MODEL DF D ( IS=34.3p RS=0.797 N=1.10\r
-+ CJO=377p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.87f RS=0.230 N=1.49 )\r
-.ENDS\r
-\r
-*SRC=SMAZ15;DI_SMAZ15;Diodes;Zener 10V-50V; 15.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_SMAZ15  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 13.8\r
-.MODEL DF D ( IS=27.5p RS=0.765 N=1.10\r
-+ CJO=377p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.49f RS=0.230 N=1.49 )\r
-.ENDS\r
-\r
-*SRC=SMAZ16;DI_SMAZ16;Diodes;Zener 10V-50V; 16.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_SMAZ16  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 14.9\r
-.MODEL DF D ( IS=25.7p RS=0.756 N=1.10\r
-+ CJO=377p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.15f RS=0.460 N=1.49 )\r
-.ENDS\r
-\r
-*SRC=SMAZ18;DI_SMAZ18;Diodes;Zener 10V-50V; 18.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_SMAZ18  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 16.6\r
-.MODEL DF D ( IS=22.9p RS=0.739 N=1.10\r
-+ CJO=251p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.58f RS=0.575 N=1.86 )\r
-.ENDS\r
-\r
-*SRC=SMAZ20;DI_SMAZ20;Diodes;Zener 10V-50V; 20.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_SMAZ20  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 18.3\r
-.MODEL DF D ( IS=20.6p RS=0.724 N=1.10\r
-+ CJO=251p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.12f RS=0.690 N=2.23 )\r
-.ENDS\r
-\r
-*SRC=SMAZ22;DI_SMAZ22;Diodes;Zener 10V-50V; 22.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_SMAZ22  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 20.2\r
-.MODEL DF D ( IS=18.7p RS=0.711 N=1.10\r
-+ CJO=251p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.75f RS=0.736 N=2.38 )\r
-.ENDS\r
-\r
-*SRC=SMAZ24;DI_SMAZ24;Diodes;Zener 10V-50V; 24.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_SMAZ24  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.7\r
-.MODEL DF D ( IS=17.2p RS=0.698 N=1.10\r
-+ CJO=226p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.43f RS=0.920 N=2.97 )\r
-.ENDS\r
-\r
-*SRC=SMAZ27;DI_SMAZ27;Diodes;Zener 10V-50V; 27.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_SMAZ27  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 25.0\r
-.MODEL DF D ( IS=15.3p RS=0.681 N=1.10\r
-+ CJO=226p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.05f RS=0.805 N=2.60 )\r
-.ENDS\r
-\r
-*SRC=SMAZ30;DI_SMAZ30;Diodes;Zener 10V-50V; 30.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_SMAZ30  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.6\r
-.MODEL DF D ( IS=13.7p RS=0.666 N=1.10\r
-+ CJO=226p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.75f RS=2.39 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=SMAZ33;DI_SMAZ33;Diodes;Zener 10V-50V; 33.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_SMAZ33  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 30.6\r
-.MODEL DF D ( IS=12.5p RS=0.653 N=1.10\r
-+ CJO=189p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.50f RS=2.89 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=SMAZ36;DI_SMAZ36;Diodes;Zener 10V-50V; 36.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_SMAZ36  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 34.4\r
-.MODEL DF D ( IS=11.4p RS=0.640 N=1.10\r
-+ CJO=189p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.29f RS=1.61 N=2.08 )\r
-.ENDS\r
-\r
-*SRC=SMAZ39;DI_SMAZ39;Diodes;Zener 10V-50V; 39.0V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_SMAZ39  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 37.2\r
-.MODEL DF D ( IS=10.6p RS=0.629 N=1.10\r
-+ CJO=189p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.11f RS=1.84 N=2.38 )\r
-.ENDS\r
-\r
-*SRC=SMAZ5V1;DI_SMAZ5V1;Diodes;Zener <=10V; 5.10V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_SMAZ5V1  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 4.41\r
-.MODEL DF D ( IS=80.8p RS=0.919 N=1.10\r
-+ CJO=1.06n VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=16.2f RS=69.0m N=0.892 )\r
-.ENDS\r
-\r
-*SRC=SMAZ6V2;DI_SMAZ6V2;Diodes;Zener <=10V; 6.20V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_SMAZ6V2  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.28\r
-.MODEL DF D ( IS=66.5p RS=0.891 N=1.10\r
-+ CJO=1.06n VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=13.3f RS=92.0m N=1.19 )\r
-.ENDS\r
-\r
-*SRC=SMAZ6V2;DI_SMAZ6V2;Diodes;Zener <=10V; 6.20V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_SMAZ6V2  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.28\r
-.MODEL DF D ( IS=66.5p RS=0.891 N=1.10\r
-+ CJO=1.06n VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=13.3f RS=92.0m N=1.19 )\r
-.ENDS\r
-\r
-*SRC=SMAZ6V8;DI_SMAZ6V8;Diodes;Zener <=10V; 6.80V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_SMAZ6V8  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.87\r
-.MODEL DF D ( IS=60.6p RS=0.878 N=1.10\r
-+ CJO=926p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=12.1f RS=92.0m N=1.19 )\r
-.ENDS\r
-\r
-*SRC=SMAZ7V5;DI_SMAZ7V5;Diodes;Zener <=10V; 7.50V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_SMAZ7V5  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.55\r
-.MODEL DF D ( IS=54.9p RS=0.864 N=1.10\r
-+ CJO=926p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=11.0f RS=94.3m N=1.22 )\r
-.ENDS\r
-\r
-*SRC=SMAZ8V2;DI_SMAZ8V2;Diodes;Zener <=10V; 8.20V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_SMAZ8V2  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.04\r
-.MODEL DF D ( IS=50.2p RS=0.851 N=1.10\r
-+ CJO=794p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=10.0f RS=0.115 N=1.49 )\r
-.ENDS\r
-\r
-*SRC=SMAZ9V1;DI_SMAZ9V1;Diodes;Zener <=10V; 9.10V  1.00W   Diodes Inc.\r
-Zener\r
-*SYM=HZEN\r
-.SUBCKT DI_SMAZ9V1  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.30\r
-.MODEL DF D ( IS=45.3p RS=0.836 N=1.10\r
-+ CJO=661p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=9.05f RS=0.161 N=1.04 )\r
-.ENDS\r
-\r
-*SRC=ZM4728A;DI_ZM4728A;Diodes;Zener <=10V; 3.30V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4728A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.384\r
-.MODEL DF D ( IS=125p RS=2.98 N=1.10\r
-+ CJO=364p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=25.0f RS=8.98 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4729A;DI_ZM4729A;Diodes;Zener <=10V; 3.60V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4729A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 0.755\r
-.MODEL DF D ( IS=114p RS=2.97 N=1.10\r
-+ CJO=319p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=22.9f RS=8.87 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4730A;DI_ZM4730A;Diodes;Zener <=10V; 3.90V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4730A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.17\r
-.MODEL DF D ( IS=106p RS=2.96 N=1.10\r
-+ CJO=283p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=21.1f RS=7.79 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4731A;DI_ZM4731A;Diodes;Zener <=10V; 4.30V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4731A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 1.68\r
-.MODEL DF D ( IS=95.8p RS=2.94 N=1.10\r
-+ CJO=244p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=19.2f RS=6.66 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4732A;DI_ZM4732A;Diodes;Zener <=10V; 4.70V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4732A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.12\r
-.MODEL DF D ( IS=87.7p RS=2.93 N=1.10\r
-+ CJO=214p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=17.5f RS=6.53 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4733A;DI_ZM4733A;Diodes;Zener <=10V; 5.10V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4733A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 2.60\r
-.MODEL DF D ( IS=80.8p RS=2.92 N=1.10\r
-+ CJO=189p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=16.2f RS=5.41 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4734A;DI_ZM4734A;Diodes;Zener <=10V; 5.60V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4734A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 3.22\r
-.MODEL DF D ( IS=73.6p RS=2.91 N=1.10\r
-+ CJO=165p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=14.7f RS=3.27 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4735A;DI_ZM4735A;Diodes;Zener <=10V; 6.20V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4735A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 4.37\r
-.MODEL DF D ( IS=66.5p RS=2.89 N=1.10\r
-+ CJO=141p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=13.3f RS=0.460 N=2.44 )\r
-.ENDS\r
-\r
-*SRC=ZM4736A;DI_ZM4736A;Diodes;Zener <=10V; 6.80V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4736A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 4.51\r
-.MODEL DF D ( IS=60.6p RS=2.88 N=1.10\r
-+ CJO=123p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=12.1f RS=1.40 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4737A;DI_ZM4737A;Diodes;Zener <=10V; 7.50V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4737A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.21\r
-.MODEL DF D ( IS=54.9p RS=2.86 N=1.10\r
-+ CJO=106p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=11.0f RS=1.71 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4738A;DI_ZM4738A;Diodes;Zener <=10V; 8.20V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4738A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 5.90\r
-.MODEL DF D ( IS=50.2p RS=2.85 N=1.10\r
-+ CJO=92.8p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=10.0f RS=1.99 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4739A;DI_ZM4739A;Diodes;Zener <=10V; 9.10V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4739A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 6.80\r
-.MODEL DF D ( IS=45.3p RS=2.84 N=1.10\r
-+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=9.05f RS=2.23 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4740A;DI_ZM4740A;Diodes;Zener <=10V; 10.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4740A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 7.67\r
-.MODEL DF D ( IS=41.2p RS=2.82 N=1.10\r
-+ CJO=68.9p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.24f RS=3.89 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4741A;DI_ZM4741A;Diodes;Zener 10V-50V; 11.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4741A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 8.66\r
-.MODEL DF D ( IS=37.5p RS=2.81 N=1.10\r
-+ CJO=101p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=7.49f RS=4.62 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4742A;DI_ZM4742A;Diodes;Zener 10V-50V; 12.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4742A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 9.65\r
-.MODEL DF D ( IS=34.3p RS=2.80 N=1.10\r
-+ CJO=94.2p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.87f RS=5.30 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4743A;DI_ZM4743A;Diodes;Zener 10V-50V; 13.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4743A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 10.7\r
-.MODEL DF D ( IS=31.7p RS=2.79 N=1.10\r
-+ CJO=88.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.34f RS=5.91 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4744A;DI_ZM4744A;Diodes;Zener 10V-50V; 15.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4744A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 12.6\r
-.MODEL DF D ( IS=27.5p RS=2.77 N=1.10\r
-+ CJO=78.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.49f RS=9.43 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4745A;DI_ZM4745A;Diodes;Zener 10V-50V; 16.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4745A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 13.6\r
-.MODEL DF D ( IS=25.7p RS=2.76 N=1.10\r
-+ CJO=74.4p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=5.15f RS=11.0 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4746A;DI_ZM4746A;Diodes;Zener 10V-50V; 18.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4746A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 15.6\r
-.MODEL DF D ( IS=22.9p RS=2.74 N=1.10\r
-+ CJO=67.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.58f RS=14.4 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4747A;DI_ZM4747A;Diodes;Zener 10V-50V; 20.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4747A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 17.6\r
-.MODEL DF D ( IS=20.6p RS=2.72 N=1.10\r
-+ CJO=62.5p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=4.12f RS=15.8 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4748A;DI_ZM4748A;Diodes;Zener 10V-50V; 22.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4748A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 19.6\r
-.MODEL DF D ( IS=18.7p RS=2.71 N=1.10\r
-+ CJO=58.2p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.75f RS=16.2 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4749A;DI_ZM4749A;Diodes;Zener 10V-50V; 24.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4749A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 21.6\r
-.MODEL DF D ( IS=17.2p RS=2.70 N=1.10\r
-+ CJO=54.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.43f RS=17.6 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4750A;DI_ZM4750A;Diodes;Zener 10V-50V; 27.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4750A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 24.5\r
-.MODEL DF D ( IS=15.3p RS=2.68 N=1.10\r
-+ CJO=50.2p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=3.05f RS=26.8 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4751A;DI_ZM4751A;Diodes;Zener 10V-50V; 30.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4751A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 27.5\r
-.MODEL DF D ( IS=13.7p RS=2.67 N=1.10\r
-+ CJO=46.7p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.75f RS=30.9 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4752A;DI_ZM4752A;Diodes;Zener 10V-50V; 33.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4752A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 30.5\r
-.MODEL DF D ( IS=12.5p RS=2.65 N=1.10\r
-+ CJO=43.8p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.50f RS=34.6 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4753A;DI_ZM4753A;Diodes;Zener 10V-50V; 36.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4753A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 33.5\r
-.MODEL DF D ( IS=11.4p RS=2.64 N=1.10\r
-+ CJO=41.4p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.29f RS=38.9 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4754A;DI_ZM4754A;Diodes;Zener 10V-50V; 39.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4754A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 36.5\r
-.MODEL DF D ( IS=10.6p RS=2.63 N=1.10\r
-+ CJO=39.4p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=2.11f RS=48.0 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4755A;DI_ZM4755A;Diodes;Zener 10V-50V; 43.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4755A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 40.4\r
-.MODEL DF D ( IS=9.58p RS=2.62 N=1.10\r
-+ CJO=37.1p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.92f RS=57.0 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4756A;DI_ZM4756A;Diodes;Zener 10V-50V; 47.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4756A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 44.4\r
-.MODEL DF D ( IS=8.77p RS=2.60 N=1.10\r
-+ CJO=35.2p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.75f RS=65.9 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4757A;DI_ZM4757A;Diodes;Zener >50V; 51.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4757A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 48.4\r
-.MODEL DF D ( IS=8.08p RS=2.59 N=1.10\r
-+ CJO=33.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.62f RS=79.5 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4758A;DI_ZM4758A;Diodes;Zener >50V; 56.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4758A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 53.3\r
-.MODEL DF D ( IS=7.36p RS=2.58 N=1.10\r
-+ CJO=32.0p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.47f RS=92.7 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4759A;DI_ZM4759A;Diodes;Zener >50V; 62.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4759A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 59.3\r
-.MODEL DF D ( IS=6.65p RS=2.56 N=1.10\r
-+ CJO=30.3p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.33f RS=106 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4760A;DI_ZM4760A;Diodes;Zener >50V; 68.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4760A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 65.3\r
-.MODEL DF D ( IS=6.06p RS=2.55 N=1.10\r
-+ CJO=29.0p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.21f RS=129 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4761A;DI_ZM4761A;Diodes;Zener >50V; 75.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4761A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 72.3\r
-.MODEL DF D ( IS=5.49p RS=2.54 N=1.10\r
-+ CJO=27.7p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.10f RS=151 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4762A;DI_ZM4762A;Diodes;Zener >50V; 82.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4762A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 79.2\r
-.MODEL DF D ( IS=5.02p RS=2.52 N=1.10\r
-+ CJO=26.6p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=1.00f RS=174 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4763A;DI_ZM4763A;Diodes;Zener >50V; 91.0V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4763A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 88.1\r
-.MODEL DF D ( IS=4.53p RS=2.51 N=1.10\r
-+ CJO=25.4p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=9.05e-016 RS=222 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZM4764A;DI_ZM4764A;Diodes;Zener >50V; 100V  1.00W   Diodes Inc. \r
-*SYM=HZEN\r
-.SUBCKT DI_ZM4764A  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 97.0\r
-.MODEL DF D ( IS=4.12p RS=2.49 N=1.10\r
-+ CJO=24.5p VJ=1.00 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=8.24e-016 RS=319 N=3.00 )\r
-.ENDS\r
-\r
-*SRC=ZMM5235B;DI_ZMM5235B;Diodes;Zener <=10V; 6.80V  0.500W   Diodes Inc. zener\r
-*SYM=HZEN\r
-.SUBCKT DI_ZMM5235B  1 2\r
-*        Terminals    A   K\r
-D1 1 2 DF\r
-DZ 3 1 DR\r
-VZ 2 3 4.56\r
-.MODEL DF D ( IS=30.3p RS=4.28 N=1.10\r
-+ CJO=196p VJ=0.750 M=0.330 TT=50.1n )\r
-.MODEL DR D ( IS=6.06f RS=1.15 N=2.97 )\r
-.ENDS\r
-\r
-*SRC=ZMM5260B;DI_ZMM5260B;Diodes;Zener 10V-50V; 43.0V  0.500W   Diodes Inc. Zener \r
-*SYM=HZEN \r
-.SUBCKT DI_ZMM5260B  1 2 \r
-*        Terminals    A   K \r
-D1 1 2 DF \r
-DZ 3 1 DR \r
-VZ 2 3 40.7 \r
-.MODEL DF D ( IS=4.79p RS=1.24 N=1.10 \r
-+ CJO=26.0p VJ=1.00 M=0.330 TT=50.1n ) \r
-.MODEL DR D ( IS=9.58e-016 RS=16.0 N=3.00 ) \r
-.ENDS\r
-\r
-*SRC=ZMM5262B;DI_ZMM5262B;Diodes;Zener >50V; 51.0V  0.500W   Diodes Inc. Zener \r
-*SYM=HZEN \r
-.SUBCKT DI_ZMM5262B  1 2 \r
-*        Terminals    A   K \r
-D1 1 2 DF \r
-DZ 3 1 DR \r
-VZ 2 3 48.7 \r
-.MODEL DF D ( IS=4.04p RS=1.24 N=1.10 \r
-+ CJO=24.3p VJ=1.00 M=0.330 TT=50.1n ) \r
-.MODEL DR D ( IS=8.08e-016 RS=30.1 N=3.00 ) \r
-.ENDS\r
-\r
-*SRC=1N4148;DI_1N4148;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. -\r
-.MODEL DI_1N4148 D  ( IS=222p RS=68.6m BV=75.0 IBV=1.00u\r
-+ CJO=4.00p  M=0.333 N=1.65 TT=5.76n )\r
-\r
-*SRC=1N4148W;1N4148W;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. \r
-.MODEL 1N4148W D  ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u\r
-+ CJO=2.00p  M=0.333 N=2.07 TT=5.76n )\r
-\r
-*SRC=1N4148WS;1N4148WS;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.\r
-Switching Diode\r
-.MODEL 1N4148WS D  ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u\r
-+ CJO=2.00p  M=0.333 N=2.07 TT=5.76n )\r
-\r
-*SRC=1N4148WT;DI_1N4148WT;Diodes;Si;  80.0V  0.125A  4.00ns   Diodes Inc.\r
-Switching\r
-.MODEL DI_1N4148WT D  ( IS=111n RS=0.628 BV=80.0 IBV=1.00u\r
-+ CJO=2.00p  M=0.333 N=1.70 TT=5.76n )\r
-\r
-*SRC=1N4448HWS;DI_1N4448HWS;Diodes;Si;  80.0V  0.500A  4.00ns   Diodes Inc. Switching Diode\r.MODEL DI_1N4448HWS D  ( IS=24.7n RS=84.4m BV=80.0 IBV=100n\r+ CJO=3.50p  M=0.333 N=2.12 TT=5.76n )\r
-\r
-*SRC=1N4448HWT;DI_1N4448HWT;Diodes;Si;  80.0V  0.250A  4.00ns   Diodes Inc.\r
-Switching\r
-.MODEL DI_1N4448HWT D  ( IS=137f RS=0.168 BV=80.0 IBV=100n\r
-+ CJO=3.56p  M=0.333 N=1.11 TT=5.76n )\r
-\r
-*SRC=1N4448W;DI_1N4448W;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. \r
-.MODEL DI_1N4448W D  ( IS=355p RS=0.168 BV=75.0 IBV=2.50u\r
-+ CJO=4.00p  M=0.333 N=1.70 TT=5.76n )\r
-\r
-*SRC=1N4448WS;DI_1N4448WS;Diodes;Si;  75.0V  0.500A  4.00ns   Diodes Inc. Switching Diode\r
-.MODEL DI_1N4448WS D  ( IS=24.7n RS=84.4m BV=75.0 IBV=2.50u\r
-+ CJO=4.00p  M=0.333 N=2.12 TT=5.76n )\r
-\r
-*SRC=BAL99;DI_BAL99;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.\r
-Switching Diode\r
-.MODEL DI_BAL99 D  ( IS=31.2n RS=0.360 BV=75.0 IBV=2.50u\r
-+ CJO=1.72p  M=0.333 N=2.35 TT=5.76n )\r
-\r
-*SRC=BAS116;DI_BAS116;Diodes;Si;  60.0V  0.215A  3.00us   Diodes Inc.\r
-Switching Diode\r
-.MODEL DI_BAS116 D  ( IS=4.53u RS=0.383 BV=60.0 IBV=5.00n\r
-+ CJO=1.72p  M=0.333 N=4.07 TT=4.32u )\r
-\r
-*SRC=BAS116T;DI_BAS116T;Diodes;Si;  85.0V  0.215A  3.00us   Diodes Inc. Switching Diode\r
-.MODEL DI_BAS116T D  ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n\r
-+ CJO=2.00p  M=0.333 N=1.61 TT=4.32u )\r
-\r
-*SRC=MMBD4148;DI_MMBD4148;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. Switching \r
-.MODEL DI_MMBD4148 D  ( IS=126n RS=0.140 BV=75.0 IBV=1.00u \r
-+ CJO=2.65p  M=0.333 N=2.60 TT=5.76n )\r
-\r
-*SRC=BAS16T;DI_BAS16T;Diodes;Si;  85.0V  0.155A  4.00ns   Diodes Inc.\r
-Switching Diode\r
-.MODEL DI_BAS16T D  ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u\r
-+ CJO=1.99p  M=0.333 N=1.95 TT=5.76n\r
-************************************************************************************************************************\r
-\r
-*SRC=BAS16TW;DI_BAS16TW;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.\r
-Switching Diode\r
-.MODEL DI_BAS16TW D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u\r
-+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )\r
-\r
-*SRC=BAS16W;DI_BAS16W;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.\r
-Switching Diode\r
-.MODEL DI_BAS16W D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u\r
-+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )\r
-\r
-*SRC=BAS19;DI_BAS19;Diodes;Si;  100V  0.400A  50.0ns   Diodes Inc.\r
-Switching Diode\r
-.MODEL DI_BAS19 D  ( IS=41.7n RS=0.270 BV=100 IBV=100n\r
-+ CJO=2.98p  M=0.333 N=2.35 TT=72.0n )\r
-\r
-*SRC=BAS19W;DI_BAS19W;Diodes;Si;  100V  0.400A  50.0ns   Diodes Inc.\r
-Switching Diode\r
-.MODEL DI_BAS19W D  ( IS=114n RS=0.172 BV=100 IBV=100n\r
-+ CJO=2.98p  M=0.333 N=2.58 TT=72.0n )\r
-\r
-*SRC=BAS20;DI_BAS20;Diodes;Si;  150V  0.400A  50.0ns   Diodes Inc.\r
-Switching Diode\r
-.MODEL DI_BAS20 D  ( IS=41.7n RS=0.270 BV=150 IBV=100n\r
-+ CJO=2.98p  M=0.333 N=2.35 TT=72.0n )\r
-\r
-*SRC=BAS20W;DI_BAS20W;Diodes;Si;  150V  0.400A  50.0ns   Diodes Inc.\r
-Switching Diode\r
-.MODEL DI_BAS20W D  ( IS=114n RS=0.172 BV=150 IBV=100n\r
-+ CJO=2.98p  M=0.333 N=2.58 TT=72.0n )\r
-\r
-*SRC=BAS21;DI_BAS21;Diodes;Si;  200V  0.400A  50.0ns   Diodes Inc.\r
-Switching Diode\r
-.MODEL DI_BAS21 D  ( IS=41.7n RS=0.270 BV=200 IBV=100n\r
-+ CJO=2.98p  M=0.333 N=2.35 TT=72.0n )\r
-\r
-*SRC=BAS21T;DI_BAS21T;Diodes;Si;  200V  0.400A  50.0ns   Diodes Inc. Switching Diode\r
-.MODEL DI_BAS21T D  ( IS=401n RS=0.105 BV=200 IBV=100n\r
-+ CJO=5.00p  M=0.333 N=2.87 TT=72.0n )\r
-\r
-*SRC=BAS21W;DI_BAS21W;Diodes;Si;  200V  0.400A  50.0ns   Diodes Inc.\r
-Switching Diode\r
-.MODEL DI_BAS21W D  ( IS=114n RS=0.172 BV=200 IBV=100n\r
-+ CJO=2.98p  M=0.333 N=2.58 TT=72.0n )\r
-\r
-*SRC=BAV101;DI_BAV101;Diodes;Si;  100V  0.250A  50.0ns   Diodes Inc. Switching \r
-.MODEL DI_BAV101 D  ( IS=680n RS=0.168 BV=100 IBV=100n \r
-+ CJO=1.99p  M=0.333 N=3.29 TT=72.0n )\r
-\r
-*SRC=BAV102;DI_BAV102;Diodes;Si;  150V  0.250A  50.0ns   Diodes Inc. Switching \r
-.MODEL DI_BAV102 D  ( IS=680n RS=0.168 BV=150 IBV=100n \r
-+ CJO=1.99p  M=0.333 N=3.29 TT=72.0n )\r
-\r
-*SRC=BAV103;DI_BAV103;Diodes;Si;  200V  0.250A  50.0ns   Diodes Inc. Switching \r
-.MODEL DI_BAV103 D  ( IS=680n RS=0.168 BV=200 IBV=100n \r
-+ CJO=1.99p  M=0.333 N=3.29 TT=72.0n )\r
-\r
-*SRC=BAV116W;DI_BAV116W;Diodes;Si;  130V  0.215A  3.00us   Diodes Inc. Low leakage diode\r
-.MODEL DI_BAV116W D  ( IS=22.5p RS=0.282 BV=130 IBV=5.00n\r
-+ CJO=2.40p  M=0.333 N=1.67 TT=4.32u )\r
-\r
-*SRC=BAV16W;BAV16W;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. -\r
-.MODEL BAV16W D  ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u\r
-+ CJO=2.00p  M=0.333 N=2.07 TT=5.76n )\r
-\r
-*SRC=BAV16WS;BAV16WS;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.\r
-Switching Diode\r
-.MODEL BAV16WS D  ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u\r
-+ CJO=2.00p  M=0.333 N=2.07 TT=5.76n )\r
-\r
-*SRC=BAV170;DI_BAV170;Diodes;Si;  85.0V  0.215A  3.00us   Diodes, Inc. diode\r
-.MODEL DI_BAV170 D  ( IS=31.5p RS=0.195 BV=85.0 IBV=5.00n\r
-+ CJO=2.00p  M=0.333 N=1.70 TT=4.32u\r
-\r
-*SRC=BAV170T;DI_BAV170T;Diodes;Si;  85.0V  0.125A  3.00us   Diodes Inc. Switching Diode, dual, model for one element\r
-.MODEL DI_BAV170T D  ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n\r
-+ CJO=2.00p  M=0.333 N=1.61 TT=4.32u )\r
-\r
-*SRC=BAV199;DI_BAV199;Diodes;Si;  85.0V  0.160A  3.00us   Diodes, Inc. diode\r
-.MODEL DI_BAV199 D  ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n\r
-+ CJO=2.00p  M=0.333 N=1.78 TT=4.32u )\r
-\r
-*SRC=BAV199DW;DI_BAV199DW;Diodes;Si;  85.0V  0.160A  3.00us   Diodes, Inc.\r
-Switching - one element of BAV199DW array\r
-.MODEL DI_BAV199DW D  ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n\r
-+ CJO=2.00p  M=0.333 N=1.78 TT=4.32u )\r
-\r
-*SRC=BAV199T;DI_BAV199T;Diodes;Si;  85.0V  0.125A  3.00us   Diodes Inc. Switching Diode, dual, model for one element\r
-.MODEL DI_BAV199T D  ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n\r
-+ CJO=2.00p  M=0.333 N=1.61 TT=4.32u )\r
-\r
-*SRC=BAV19W;BAV19W;Diodes;Si;  100V  0.400A  50.0ns   Diodes Inc. -\r
-.MODEL BAV19W D  ( IS=1.09u RS=0.105 BV=100 IBV=100n\r
-+ CJO=5.00p  M=0.333 N=3.29 TT=72.0n )\r
-\r
-*SRC=BAV19WS;BAV19WS;Diodes;Si;  100V  0.400A  50.0ns   Diodes Inc.\r
-Switching Diode\r
-.MODEL BAV19WS D  ( IS=1.09u RS=0.105 BV=100 IBV=100n\r
-+ CJO=5.00p  M=0.333 N=3.29 TT=72.0n )\r
-\r
-*SRC=BAV20W;DI_BAV20W;Diodes;Si;  150V  0.400A  50.0ns   Diodes Inc. -\r
-.MODEL DI_BAV20W D  ( IS=1.09u RS=0.105 BV=150 IBV=100n\r
-+ CJO=5.00p  M=0.333 N=3.29 TT=72.0n )\r
-\r
-*SRC=BAV20WS;DI_BAV20WS;Diodes;Si;  150V  0.400A  50.0ns   Diodes Inc.\r
-Switching Diode\r
-.MODEL DI_BAV20WS D  ( IS=1.09u RS=0.105 BV=150 IBV=100n\r
-+ CJO=5.00p  M=0.333 N=3.29 TT=72.0n )\r
-\r
-*SRC=BAV21W;DI_BAV21W;Diodes;Si;  200V  0.400A  50.0ns   Diodes Inc. -\r
-.MODEL DI_BAV21W D  ( IS=1.09u RS=0.105 BV=200 IBV=100n\r
-+ CJO=5.00p  M=0.333 N=3.29 TT=72.0n )\r
-\r
-*SRC=BAV21WS;DI_BAV21WS;Diodes;Si;  200V  0.400A  50.0ns   Diodes Inc.\r
-Switching Diode\r
-.MODEL DI_BAV21WS D  ( IS=1.09u RS=0.105 BV=200 IBV=100n\r
-+ CJO=5.00p  M=0.333 N=3.29 TT=72.0n )\r
-\r
-*SRC=BAV23A;DI_BAV23A;Diodes;Si;  200V  0.400A  50.0ns   Diodes Inc. Switching Diode \r
-.MODEL DI_BAV23A D  ( IS=237n RS=0.260 BV=200 IBV=100n \r
-+ CJO=3.05p  M=0.333 N=2.69 TT=72.0n )\r
-\r
-*SRC=BAV23C;DI_BAV23C;Diodes;Si;  200V  0.400A  50.0ns   Diodes Inc. Switching Diode \r
-.MODEL DI_BAV23C D  ( IS=237n RS=0.260 BV=200 IBV=100n \r
-+ CJO=3.05p  M=0.333 N=2.69 TT=72.0n )\r
-\r
-*SRC=BAV23S;DI_BAV23S;Diodes;Si;  200V  0.400A  50.0ns   Diodes Inc. Switching Diode \r
-.MODEL DI_BAV23S D  ( IS=237n RS=0.260 BV=200 IBV=100n \r
-+ CJO=3.05p  M=0.333 N=2.69 TT=72.0n )\r
-\r
-*SRC=BAV3004W;DI_BAV3004W;Diodes;Si;  300V  0.225A  50.0ns   Diodes Inc.\r
-Switching\r
-.MODEL DI_BAV3004W D  ( IS=2.76u RS=0.187 BV=300 IBV=100n\r
-+ CJO=1.17p  M=0.333 N=1.70 TT=72.0n )\r
-\r
-*SRC=BAV70;DI_BAV70;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes, Inc. switching\r
-.MODEL DI_BAV70 D  ( IS=308p RS=0.329 BV=75.0 IBV=2.50u\r
-+ CJO=2.65p  M=0.333 N=1.70 TT=5.76n )\r
-\r
-*SRC=BAV70;DI_BAV70;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes, Inc. switching\r
-.MODEL DI_BAV70 D  ( IS=308p RS=0.329 BV=75.0 IBV=2.50u\r
-+ CJO=2.65p  M=0.333 N=1.70 TT=5.76n )\r
-\r
-*SRC=BAV70T;DI_BAV70T;Diodes;Si;  85.0V  0.155A  4.00ns   Diodes Inc.\r
-Switching Diode - one element of device\r
-.MODEL DI_BAV70T D  ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u\r
-+ CJO=1.99p  M=0.333 N=1.95 TT=5.76n )\r
-\r
-*SRC=BAV70W;DI_BAV70W;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.\r
-Switching Diode\r
-.MODEL DI_BAV70W D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u\r
-+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )\r
-\r
-*SRC=BAV756DW;DI_BAV756DW;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. Switching - one element of device \r
-.MODEL DI_BAV756DW D  ( IS=49.2n RS=0.141 BV=75.0 IBV=2.50u \r
-+ CJO=2.65p  M=0.333 N=2.45 TT=5.76n )\r
-\r
-\r
-\r
-76n )\r
-\r
-*SRC=BAV99DW;DI_BAV99DW;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. Switching Diode, Quad, Model for one element\r
-.MODEL DI_BAV99DW D  ( IS=412p RS=0.140 BV=75.0 IBV=2.50u\r
-+ CJO=2.00p  M=0.333 N=1.70 TT=5.76n )\r
-\r
-*SRC=BAV99T;DI_BAV99T;Diodes;Si;  85.0V  0.155A  4.00ns   Diodes Inc.\r
-Switching Diode - one element of device\r
-.MODEL DI_BAV99T D  ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u\r
-+ CJO=1.99p  M=0.333 N=1.95 TT=5.76n )\r
-\r
-*SRC=BAV99W;DI_BAV99W;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.\r
-Switching Diode\r
-.MODEL DI_BAV99W D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u\r
-+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )\r
-\r
-*SRC=BAW156;DI_BAW156;Diodes;Si;  85.0V  0.160A  3.00us   Diodes, Inc. diode\r
-.MODEL DI_BAW156 D  ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n\r
-+ CJO=2.00p  M=0.333 N=1.78 TT=4.32u )\r
-\r
-*SRC=BAW156T;DI_BAW156T;Diodes;Si;  85.0V  0.125A  3.00us   Diodes Inc. Switching Diode, dual, model for one element\r
-.MODEL DI_BAW156T D  ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n\r
-+ CJO=2.00p  M=0.333 N=1.61 TT=4.32u )\r
-\r
-*SRC=BAW56;DI_BAW56;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. Switching Diode \r
-.MODEL DI_BAW56 D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u \r
-+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )\r
-\r
-*SRC=BAW567DW;DI_BAW567DW;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. Switching Diode \r
-.MODEL DI_BAW567DW D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u \r
-+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )\r
-\r
-*SRC=BAW56DW;DI_BAW56DW;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. Switching Diode \r
-.MODEL DI_BAW56DW D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u \r
-+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )\r
-\r
-*SRC=BAW56T;DI_BAW56T;Diodes;Si;  85.0V  0.155A  4.00ns   Diodes Inc.\r
-Switching Diode - one element of device\r
-.MODEL DI_BAW56T D  ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u\r
-+ CJO=1.99p  M=0.333 N=1.95 TT=5.76n )\r
-\r
-*SRC=BAW56W;DI_BAW56W;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.\r
-Switching Diode\r
-.MODEL DI_BAW56W D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u\r
-+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )\r
-\r
-*SRC=LL4148;DI_LL4148;Diodes;Si;  75.0V  0.300A  4.00us   Diodes Inc fast switching diode\r
-.MODEL DI_LL4148 D  ( IS=1.06n RS=0.316 BV=75.0 IBV=5.00u\r
-+ CJO=3.00p  M=0.333 N=1.87 TT=5.76u )\r
-\r
-*SRC=MMBD2004S;DI_MMBD2004S;Diodes;Si;  240V  0.225A  50.0ns   Diodes Inc. Switching \r
-.MODEL DI_MMBD2004S D  ( IS=1.76u RS=0.187 BV=240 IBV=100n \r
-+ CJO=6.63p  M=0.333 N=1.70 TT=72.0n )\r
-\r
-*SRC=MMBD3004BRM;DI_MMBD3004BRM;Diodes;Si;  300V  0.225A  50.0ns   Diodes\r
-Inc. Switching - one element of MMBD3004BRM\r
-.MODEL DI_MMBD3004BRM D  ( IS=2.76u RS=0.187 BV=300 IBV=100n\r
-+ CJO=1.17p  M=0.333 N=1.70 TT=72.0n )\r
-\r
-*SRC=MMBD3004S;DI_MMBD3004S;Diodes;Si;  300V  0.225A  50.0ns   Diodes Inc. Switching \r
-.MODEL DI_MMBD3004S D  ( IS=2.76u RS=0.187 BV=300 IBV=100n \r
-+ CJO=1.17p  M=0.333 N=1.70 TT=72.0n )\r
-\r
-*SRC=MMBD4148;DI_MMBD4148;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. Switching Diode \r
-.MODEL DI_MMBD4148 D  ( IS=300n RS=0.422 BV=75.0 IBV=2.50u \r
-+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )\r
-\r
-*SRC=MMBD4148W;DI_MMBD4148W;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.\r
-Switching Diode\r
-.MODEL DI_MMBD4148W D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u\r
-+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )\r
-\r
-*SRC=MMBD4448;DI_MMBD4448;Diodes;Si;  75.0V  0.250A  4.00ns   Diodes Inc. Switching Diode\r
-.MODEL DI_MMBD4448 D  ( IS=300n RS=0.422 BV=75.0 IBV=2.50u\r
-+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )\r
-\r
-*SRC=MMBD4448H;DI_MMBD4448H;Diodes;Si;  80.0V  0.250A  4.00ns   Diodes Inc. Switching Diode \r
-.MODEL DI_MMBD4448H D  ( IS=300n RS=0.422 BV=80.0 IBV=100n \r
-+ CJO=1.99p  M=0.333 N=2.77 TT=5.76n )\r
-\r
-*SRC=MMBD4448HADW;DI_MMBD4448HADW;Diodes;Si;  80.0V  0.500A  1.50ns\r
-Diodes Inc. Switching - model for one node of four\r
-.MODEL DI_MMBD4448HADW D  ( IS=1.12n RS=84.0m BV=80.0 IBV=100n\r
-+ CJO=2.92p  M=0.333 N=1.70 TT=2.16n )\r
-\r
-*SRC=MMBD4448HAQW;DI_MMBD4448HAQW;Diodes;Si;  80.0V  0.500A  1.50ns\r
-Diodes Inc. Switching - model for one node of four\r
-.MODEL DI_MMBD4448HAQW D  ( IS=1.12n RS=84.0m BV=80.0 IBV=100n\r
-+ CJO=2.92p  M=0.333 N=1.70 TT=2.16n )\r
-\r
-*SRC=MMBD4448HCQW;DI_MMBD4448HCQW;Diodes;Si;  80.0V  0.500A  1.50ns\r
-Diodes Inc. Switching - model for one node of four\r
-.MODEL DI_MMBD4448HCQW D  ( IS=1.12n RS=84.0m BV=80.0 IBV=100n\r
-+ CJO=2.92p  M=0.333 N=1.70 TT=2.16n )\r
-\r
-*SRC=MMBD4448HSDW;DI_MMBD4448HSDW;Diodes;Si;  80.0V  0.500A  1.50ns\r
-Diodes Inc. Switching - model for one node of four\r
-.MODEL DI_MMBD4448HSDW D  ( IS=1.12n RS=84.0m BV=80.0 IBV=100n\r
-+ CJO=2.92p  M=0.333 N=1.70 TT=2.16n )\r
-\r
-*SRC=MMBD4448HT;DI_MMBD4448HT;Diodes;Si;  80.0V  0.500A  4.00ns   Diodes\r
-Inc. Switching Diode\r
-.MODEL DI_MMBD4448HT D  ( IS=787n RS=0.208 BV=80.0 IBV=100n\r
-+ CJO=1.99p  M=0.333 N=2.86 TT=5.76n )\r
-\r
-*SRC=MMBD4448HTA;DI_MMBD4448HTA;Diodes;Si;  80.0V  0.500A  4.00ns   Diodes\r
-Inc. Switching Diode, dual, model for one element\r
-.MODEL DI_MMBD4448HTA D  ( IS=787n RS=0.208 BV=80.0 IBV=100n\r
-+ CJO=1.99p  M=0.333 N=2.86 TT=5.76n )\r
-\r
-*SRC=MMBD4448HTC;DI_MMBD4448HTC;Diodes;Si;  80.0V  0.500A  4.00ns   Diodes\r
-Inc. Switching Diode, dual, model for one element\r
-.MODEL DI_MMBD4448HTC D  ( IS=787n RS=0.208 BV=80.0 IBV=100n\r
-+ CJO=1.99p  M=0.333 N=2.86 TT=5.76n )\r
-\r
-*SRC=MMBD4448HTS;DI_MMBD4448HTS;Diodes;Si;  80.0V  0.500A  4.00ns   Diodes\r
-Inc. Switching Diode, dual, model for one element\r
-.MODEL DI_MMBD4448HTS D  ( IS=787n RS=0.208 BV=80.0 IBV=100n\r
-+ CJO=1.99p  M=0.333 N=2.86 TT=5.76n )\r
-\r
-*SRC=MMBD4448HTW;DI_MMBD4448HTW;Diodes;Si;  80.0V  0.500A  1.50ns\r
-Diodes Inc. Switching - model for one node of three\r
-.MODEL DI_MMBD4448HTW D  ( IS=1.12n RS=84.0m BV=80.0 IBV=100n\r
-+ CJO=2.92p  M=0.333 N=1.70 TT=2.16n )\r
-\r
-*SRC=MMBD4448HW;DI_MMBD4448HW;Diodes;Si;  80.0V  0.500A  4.00ns   Diodes Inc. Switching Diode\r
-.MODEL DI_MMBD4448HW D  ( IS=77.0n RS=84.0m BV=80.0 IBV=100n\r
-+ CJO=1.99p  M=0.333 N=2.37 TT=5.76n )\r
-\r
-*SRC=MMBD4448W;DI_MMBD4448W;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc.\r
-Switching Diode\r
-.MODEL DI_MMBD4448W D  ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u\r
-+ CJO=1.72p  M=0.333 N=2.34 TT=5.76n )\r
-\r
-*SRC=MMBD7000;DI_MMBD7000;Diodes;Si;  75.0V  0.300A  4.00us   Diodes Inc. \r
-.MODEL DI_MMBD7000 D  ( IS=5.08n RS=0.140 BV=75.0 IBV=2.00u\r
-+ CJO=2.00p  M=0.333 N=2.03 TT=5.76u )\r
-\r
-*SRC=MMBD4148;DI_MMBD4148;Diodes;Si;  75.0V  0.300A  4.00ns   Diodes Inc. Switching \r
-.MODEL DI_MMBD4148 D  ( IS=126n RS=0.140 BV=75.0 IBV=1.00u \r
-+ CJO=2.65p  M=0.333 N=2.60 TT=5.76n )\r
-\r
-*SRC=1N5711;DI_1N5711;Diodes;Si;  70.0V  15.0mA  1.00ns   Diodes Inc. -\r
-.MODEL DI_1N5711 D  ( IS=315n RS=2.80 BV=70.0 IBV=10.0u\r
-+ CJO=2.00p  M=0.333 N=2.03 TT=1.44n )\r
-\r
-*SRC=1N5711W;DI_1N5711W;Diodes;Si;  70.0V  15.0mA  1.00ns   Diodes Inc. -\r
-.MODEL DI_1N5711W D  ( IS=315n RS=2.80 BV=70.0 IBV=10.0u\r
-+ CJO=2.00p  M=0.333 N=2.03 TT=1.44n )\r
-\r
-*SRC=1N5711WS;DI_1N5711WS;Diodes;Si;  70.0V  15.0mA  1.00ns   Diodes Inc. \r
-.MODEL DI_1N5711WS D  ( IS=315n RS=2.80 BV=70.0 IBV=10.0u\r
-+ CJO=2.00p  M=0.333 N=2.03 TT=1.44n )\r
-\r
-*SRC=1N6263W;DI_1N6263W;Diodes;Si;  60.0V  15.0mA  1.00ns   Diodes Inc. Schottky \r
-.MODEL DI_1N6263W D  ( IS=1.82u RS=2.80 BV=60.0 IBV=200n \r
-+ CJO=2.65p  M=0.333 N=1.70 TT=1.44n )\r
-\r
-*SRC=BAS40;DI_BAS40;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode \r
-.MODEL DI_BAS40 D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n \r
-+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )\r
-\r
-*SRC=BAS40-04;DI_BAS40-04;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two \r.MODEL DI_BAS40-04 D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n \r+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )\r
-\r
-*SRC=BAS40-04T;DI_BAS40-04T;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two \r.MODEL DI_BAS40-04T D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n \r+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )\r
-\r
-*SRC=BAS40-05;DI_BAS40-05;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two \r.MODEL DI_BAS40-05 D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n \r+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )\r
-\r
-*SRC=BAS40-05T;DI_BAS40-05T;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two \r.MODEL DI_BAS40-05T D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n \r+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )\r
-\r
-*SRC=BAS40-06;DI_BAS40-06;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two \r.MODEL DI_BAS40-06 D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n \r+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )\r
-\r
-*SRC=BAS40-06T;DI_BAS40-06T;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two \r.MODEL DI_BAS40-06T D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n \r+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )\r
-\r
-*SRC=BAS40BRW;DI_BAS40BRW;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, Quad, one node of four\r.MODEL DI_BAS40BRW D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n \r+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )\r
-\r
-*SRC=BAS40DW-04;DI_BAS40DW-04;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, Quad, one node of four\r.MODEL DI_BAS40DW-04 D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n \r+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )\r
-\r
-*SRC=BAS40DW-05;DI_BAS40DW-05;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, Quad, one node of four\r.MODEL DI_BAS40DW-05 D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n \r+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )\r
-\r
-*SRC=BAS40DW-06;DI_BAS40DW-06;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, Quad, one node of four\r.MODEL DI_BAS40DW-06 D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n \r+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )\r
-\r
-*SRC=BAS40T;DI_BAS40T;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode \r.MODEL DI_BAS40T D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n \r+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )\r
-\r
-*SRC=BAS40TW;DI_BAS40TW;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, Tripple, one node of three\r.MODEL DI_BAS40TW D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n \r+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )\r
-\r
-*SRC=BAS40W;DI_BAS40W;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode\r.MODEL DI_BAS40W D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n \r+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )\r
-\r
-*SRC=BAS40W-04;DI_BAS40W-04;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAS40W-04 D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n \r+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )\r
-\r
-*SRC=BAS40W-05;DI_BAS40W-05;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAS40W-05 D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n \r+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )\r
-\r
-*SRC=BAS40W-06;DI_BAS40W-06;Diodes;Si;  40.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAS40W-06 D  ( IS=6.12u RS=0.120 BV=40.0 IBV=200n \r+ CJO=5.00p  M=0.333 N=2.61 TT=7.20n )\r
-\r
-*SRC=BAS70;DI_BAS70;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. -\r
-.MODEL DI_BAS70 D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u\r
-+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAS70-04;DI_BAS70-04;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAS70-04 D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u\r+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAS70-04T;DI_BAS70-04T;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAS70-04T D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u\r+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAS70-05;DI_BAS70-05;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAS70-05 D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u\r+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAS70-05T;DI_BAS70-05T;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAS70-05T D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u\r+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAS70-06;DI_BAS70-06;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAS70-06 D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u\r+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAS70-06T;DI_BAS70-06T;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAS70-06T D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u\r+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAS70BRW;DI_BAS70BRW;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, quad, one node of four\r.MODEL DI_BAS70BRW D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u\r+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAS70DW-04;DI_BAS70DW-04;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, quad, one node of four\r.MODEL DI_BAS70DW-04 D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u\r+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAS70DW-05;DI_BAS70DW-05;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, quad, one node of four\r.MODEL DI_BAS70DW-05 D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u\r+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAS70DW-06;DI_BAS70DW-06;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, quad, one node of four\r.MODEL DI_BAS70DW-06 D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u\r+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAS70JW;DI_BAS70JW;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAS70JW D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u\r+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAS70T;DI_BAS70T;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode\r.MODEL DI_BAS70T D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u\r+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAS70TW;DI_BAS70TW;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, tripple, one node of three\r.MODEL DI_BAS70TW D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u\r+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAS70W;DI_BAS70W;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode\r.MODEL DI_BAS70W D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u\r+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAS70W-04;DI_BAS70W-04;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAS70W-04 D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u\r+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAS70W-05;DI_BAS70W-05;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAS70W-05 D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u\r+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAS70W-06;DI_BAS70W-06;Diodes;Si;  70.0V  70.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAS70W-06 D  ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u\r+ CJO=2.00p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAT42;DI_BAT42;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc.\r
-Schottky\r
-.MODEL DI_BAT42 D  ( IS=2.46u RS=0.210 BV=30.0 IBV=500n\r
-+ CJO=13.3p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAT42W;DI_BAT42W;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc Schottky Diode\r.MODEL DI_BAT42W D  ( IS=87.5u RS=18.1m BV=30.0 IBV=500n\r+ CJO=8.88p  M=0.333 N=3.51 TT=7.20n )\r
-\r
-*SRC=BAT42WS;DI_BAT42WS;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc\r
-Schottky Diode\r
-.MODEL DI_BAT42WS D  ( IS=87.5u RS=18.1m BV=30.0 IBV=500n\r
-+ CJO=8.88p  M=0.333 N=3.51 TT=7.20n )\r
-\r
-*SRC=BAT43W;DI_BAT43W;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc Schottky Diode \r.MODEL DI_BAT43W D  ( IS=87.5u RS=18.1m BV=30.0 IBV=500n \r+ CJO=8.88p  M=0.333 N=3.51 TT=7.20n )\r
-\r
-*SRC=BAT43WS;DI_BAT43WS;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc Schottky Diode \r
-.MODEL DI_BAT43WS D  ( IS=87.5u RS=18.1m BV=30.0 IBV=500n \r
-+ CJO=8.88p  M=0.333 N=3.51 TT=7.20n )\r
-\r
-*SRC=BAT46;DI_BAT46;Diodes;Si;  100V  0.150A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_BAT46 D  ( IS=603n RS=0.280 BV=100 IBV=5.00u \r
-+ CJO=7.96p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAT46W;DI_BAT46W;Diodes;Si;  100V  0.150A  5.00ns   Diodes Inc. Schottky \r.MODEL DI_BAT46W D  ( IS=603n RS=0.280 BV=100 IBV=5.00u \r+ CJO=7.96p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAT54;DI_BAT54;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_BAT54 D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u\r
-+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )\r
-\r
-*SRC=BAT54A;DI_BAT54A;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAT54A D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u\r+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )\r
-\r
-*SRC=BAT54ADW;DI_BAT54ADW;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, quad, one node of four\r.MODEL DI_BAT54ADW D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u\r+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )\r
-\r
-*SRC=BAT54AT;DI_BAT54AT;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAT54AT D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u\r+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )\r
-\r
-*SRC=BAT54AW;DI_BAT54AW;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAT54AW D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u\r+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )\r
-\r
-*SRC=BAT54BRW;DI_BAT54BRW;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, quad, one node of four\r.MODEL DI_BAT54BRW D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u\r+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )\r
-\r
-*SRC=BAT54C;DI_BAT54C;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAT54C D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u\r+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )\r
-\r
-*SRC=BAT54CDW;DI_BAT54CDW;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, quad, one node of four\r.MODEL DI_BAT54CDW D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u\r+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )\r
-\r
-*SRC=BAT54CT;DI_BAT54CT;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAT54CT D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u\r+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )\r
-\r
-*SRC=BAT54CW;DI_BAT54CW;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAT54CW D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u\r+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )\r
-\r
-*******************************************************************************************************************************************\r
-*SRC=BAT54DW;DI_BAT54DW;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky, dual, one of two nodes\r
-.MODEL DI_BAT54DW D  ( IS=235n RS=0.210 BV=30.0 IBV=2.00u\r
-+ CJO=13.3p  M=0.333 N=1.28 TT=7.20n )\r
-*******************************************************************************************************************************************\r
-\r
-*SRC=BAT54JW;DI_BAT54JW;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAT54JW D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u\r+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )\r
-\r
-*SRC=BAT54S;DI_BAT54S;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAT54S D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u\r+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )\r
-\r
-*SRC=BAT54SDW;DI_BAT54SDW;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, quad, one node of four\r.MODEL DI_BAT54SDW D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u\r+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )\r
-\r
-*SRC=BAT54ST;DI_BAT54ST;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAT54ST D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u\r+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )\r
-\r
-*SRC=BAT54SW;DI_BAT54SW;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, dual, one node of two\r.MODEL DI_BAT54SW D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u\r+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )\r
-\r
-*SRC=BAT54T;DI_BAT54T;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode\r.MODEL DI_BAT54T D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u\r+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )\r
-\r
-*SRC=BAT54TW;DI_BAT54TW;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode, tripple, one node of three\r.MODEL DI_BAT54TW D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u\r+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )\r
-\r
-*SRC=BAT54W;DI_BAT54W;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode\r.MODEL DI_BAT54W D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u\r+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )\r
-\r
-*SRC=BAT54WS;DI_BAT54WS;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc. Schottky diode\r
-.MODEL DI_BAT54WS D  ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u\r
-+ CJO=13.3p  M=0.333 N=2.28 TT=7.20n )\r
-\r
-*SRC=LLSD101A;DI_LLSD101A;Diodes;Si;  60.0V  15.0mA  1.00ns   Diodes Inc. Schottky \r.MODEL DI_LLSD101A D  ( IS=1.82u RS=2.80 BV=60.0 IBV=200n \r+ CJO=2.65p  M=0.333 N=1.70 TT=1.44n )\r
-\r
-*SRC=LLSD101B;DI_LLSD101B;Diodes;Si;  50.0V  15.0mA  1.00ns   Diodes Inc. Schottky \r.MODEL DI_LLSD101B D  ( IS=1.82u RS=2.80 BV=50.0 IBV=200n \r+ CJO=2.65p  M=0.333 N=1.70 TT=1.44n )\r
-\r
-*SRC=LLSD101C;DI_LLSD101C;Diodes;Si;  40.0V  15.0mA  1.00ns   Diodes Inc. Schottky \r.MODEL DI_LLSD101C D  ( IS=1.82u RS=2.80 BV=40.0 IBV=200n \r+ CJO=2.65p  M=0.333 N=1.70 TT=1.44n )\r
-\r
-*SRC=LLSD103A;DI_LLSD103A;Diodes;Si;  40.0V  0.350A  10.0ns   Diodes Inc. Schottky \r.MODEL DI_LLSD103A D  ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u \r+ CJO=53.0p  M=0.333 N=1.70 TT=14.4n )\r
-\r
-*SRC=LLSD103B;DI_LLSD103B;Diodes;Si;  30.0V  0.350A  10.0ns   Diodes Inc. Schottky \r.MODEL DI_LLSD103B D  ( IS=8.65u RS=0.120 BV=30.0 IBV=5.00u \r+ CJO=53.0p  M=0.333 N=1.70 TT=14.4n )\r
-\r
-*SRC=LLSD103C;DI_LLSD103C;Diodes;Si;  20.0V  0.350A  10.0ns   Diodes Inc. Schottky \r.MODEL DI_LLSD103C D  ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u \r+ CJO=53.0p  M=0.333 N=1.70 TT=14.4n )\r
-\r
-*SRC=SD101A;DI_SD101A;Diodes;Si;  60.0V  15.0mA  1.00ns   Diodes Inc. Schottky \r.MODEL DI_SD101A D  ( IS=1.82u RS=2.80 BV=60.0 IBV=200n \r+ CJO=2.65p  M=0.333 N=1.70 TT=1.44n )\r
-\r
-*SRC=SD101AW;DI_SD101AW;Diodes;Si;  60.0V  15.0mA  1.00ns   Diodes Inc. Schottky \r
-.MODEL DI_SD101AW D  ( IS=1.82u RS=2.80 BV=60.0 IBV=200n \r
-+ CJO=2.65p  M=0.333 N=1.70 TT=1.44n )\r
-\r
-*******************************************************************************************************************************************\r
-*SRC=SD101AWS;DI_SD101AWS;Diodes;Si;  60.0V  15.0mA  1.00ns   Diodes Inc. Schottky- SD101AWS/BWS/CWS\r
-.MODEL DI_SD101AWS D  ( IS=230n RS=2.13 BV=60.0 IBV=200n\r
-+ CJO=2.00p  M=0.333 N=1.96 TT=1.44n )\r
-*******************************************************************************************************************************************\r
-\r
-*SRC=SD101B;DI_SD101B;Diodes;Si;  50.0V  15.0mA  1.00ns   Diodes Inc. Schottky \r.MODEL DI_SD101B D  ( IS=1.82u RS=2.80 BV=50.0 IBV=200n \r+ CJO=2.65p  M=0.333 N=1.70 TT=1.44n )\r
-\r
-*SRC=SD101BW;DI_SD101BW;Diodes;Si;  50.0V  15.0mA  1.00ns   Diodes Inc. Schottky \r
-.MODEL DI_SD101BW D  ( IS=1.82u RS=2.80 BV=50.0 IBV=200n \r
-+ CJO=2.65p  M=0.333 N=1.70 TT=1.44n )\r
-\r
-*SRC=SD101BWS;DI_SD101BWS;Diodes;Si;  50.0V  15.0mA  1.00ns   Diodes Inc. Schottky \r.MODEL DI_SD101BWS D  ( IS=1.82u RS=2.80 BV=50.0 IBV=200n \r+ CJO=2.65p  M=0.333 N=1.70 TT=1.44n )\r
-\r
-*SRC=SD101C;DI_SD101C;Diodes;Si;  40.0V  15.0mA  1.00ns   Diodes Inc. Schottky \r.MODEL DI_SD101C D  ( IS=1.82u RS=2.80 BV=40.0 IBV=200n \r+ CJO=2.65p  M=0.333 N=1.70 TT=1.44n )\r
-\r
-*SRC=SD101CW;DI_SD101CW;Diodes;Si;  40.0V  15.0mA  1.00ns   Diodes Inc. Schottky \r
-.MODEL DI_SD101CW D  ( IS=1.82u RS=2.80 BV=40.0 IBV=200n \r
-+ CJO=2.65p  M=0.333 N=1.70 TT=1.44n )\r
-\r
-*SRC=SD101CWS;DI_SD101CWS;Diodes;Si;  40.0V  15.0mA  1.00ns   Diodes Inc. Schottky \r.MODEL DI_SD101CWS D  ( IS=1.82u RS=2.80 BV=40.0 IBV=200n \r+ CJO=2.65p  M=0.333 N=1.70 TT=1.44n )\r
-\r
-*SRC=SD103ASDM;DI_SD103ASDM;Diodes;Si;  40.0V  0.350A  10.0ns   Diodes Inc. Schottky Barrier Diode, quad, one node of four\r
-.MODEL DI_SD103ASDM D  ( IS=646n RS=0.120 BV=40.0 IBV=5.00u\r
-+ CJO=29.2  M=0.333 N=1.28 TT=14.4n )\r
-\r
-*SRC=SD103ATW;DI_SD103ATW;Diodes;Si;  40.0V  0.350A  10.0ns   Diodes Inc. Schottky Barrier Diode, tripple, one node of three\r
-.MODEL DI_SD103ATW D  ( IS=646n RS=0.120 BV=40.0 IBV=5.00u\r
-+ CJO=29.2  M=0.333 N=1.28 TT=14.4n )\r
-\r
-*SRC=SD103AW;DI_SD103AW;Diodes;Si;  40.0V  0.350A  10.0ns   Diodes Inc. Schottky \r
-.MODEL DI_SD103AW D  ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u \r
-+ CJO=53.0p  M=0.333 N=1.70 TT=14.4n )\r
-\r
-*SRC=SD103AWS;DI_SD103AWS;Diodes;Si;  40.0V  0.350A  10.0ns   Diodes Inc.\r
-Schottky\r
-.MODEL DI_SD103AWS D  ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u\r
-+ CJO=53.0p  M=0.333 N=1.70 TT=14.4n )\r
-\r
-\r
-\r
-*SRC=SD103BWS;DI_SD103BWS;Diodes;Si;  30.0V  0.350A  10.0ns   Diodes Inc. Schottky \r\r
-.MODEL DI_SD103BWS D  ( IS=8.65u RS=0.120 BV=30.0 IBV=5.00u \r\r
-+ CJO=53.0p  M=0.333 N=1.70 TT=14.4n )\r
-\r
-*SRC=SD103CW;DI_SD103CW;Diodes;Si;  20.0V  0.350A  10.0ns   Diodes Inc. Schottky \r
-.MODEL DI_SD103CW D  ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u \r
-+ CJO=53.0p  M=0.333 N=1.70 TT=14.4n )\r
-\r
-*SRC=SD103CWS;DI_SD103CWS;Diodes;Si;  20.0V  0.350A  10.0ns   Diodes Inc. Schottky \r
-.MODEL DI_SD103CWS D  ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u \r
-+ CJO=53.0p  M=0.333 N=1.70 TT=14.4n )\r
-\r
-*SRC=SDM03MT40;DI_SDM03MT40;Diodes;Si;  40.0V  30.0mA  3.00us   Diodes Inc. Schottky Barrier Diode, tripple, one node of three\r
-.MODEL DI_SDM03MT40 D  ( IS=12.5u RS=1.41 BV=40.0 IBV=1.00u\r
-+ CJO=2.00p  M=0.333 N=2.79 TT=4.32u )\r
-**************************************************************************************************************************************************************\r
-\r
-*SRC=SDM03U40;DI_SDM03U40;Diodes;Si;  30.0V  30.0mA  1.00ns   Diodes Inc.\r
-Schottky\r
-.MODEL DI_SDM03U40 D  ( IS=16.5u RS=2.20 BV=30.0 IBV=500n\r
-+ CJO=2.59p  M=0.333 N=2.92 TT=1.44n )\r
-\r
-*SRC=SDM10M45SD;DI_SDM10M45SD;Diodes;Si;  45.0V  0.100A  3.00us   Diodes Inc. Schottky Barrier Diode\r
-.MODEL DI_SDM10M45SD D  ( IS=553n RS=0.420 BV=45.0 IBV=1.00u\r
-+ CJO=10.6p  M=0.333 N=1.36 TT=4.32u )\r
-**********************************************************************************************************************************\r
-\r
-*SRC=SDM10P45;DI_SDM10P45;Diodes;Si;  45.0V  0.100A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_SDM10P45 D  ( IS=745n RS=0.792 BV=45.0 IBV=1.00u \r
-+ CJO=11.2p  M=0.333 N=1.39 TT=7.20n )\r
-\r
-*SRC=SDM10U45;DI_SDM10U45;Diodes;Si;  40.0V  0.300A  5.00ns   Diodes Inc.\r
-Schottky\r
-.MODEL DI_SDM10U45 D  ( IS=26.8u RS=0.140 BV=40.0 IBV=1.00u\r
-+ CJO=10.6p  M=0.333 N=2.45 TT=7.20n )\r
-\r
-*SRC=SDM20E40C;DI_SDM20E40C;Diodes;Si;  40.0V  0.400A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_SDM20E40C D  ( IS=3.15u RS=0.165 BV=40.0 IBV=70.0u \r
-+ CJO=39.8p  M=0.333 N=1.16 TT=7.20n )\r
-\r
-*SRC=SDM20U30;DI_SDM20U30;Diodes;Si;  30.0V  0.200A  5.00ns   Diodes Inc.\r
-Schottky\r
-.MODEL DI_SDM20U30 D  ( IS=59.4n RS=0.210 BV=30.0 IBV=150u\r
-+ CJO=19.9p  M=0.333 N=0.700 TT=7.20n )\r
-\r
-*SRC=SDM20U40;DI_SDM20U40;Diodes;Si;  40.0V  0.250A  10.0ns   Diodes Inc.\r
-Schottky\r
-.MODEL DI_SDM20U40 D  ( IS=4.32u RS=0.168 BV=40.0 IBV=5.00u\r
-+ CJO=39.8p  M=0.333 N=1.70 TT=14.4n )\r
-\r
-*SRC=SDM40E20LS;DI_SDM40E20LS;Diodes;Si;  20.0V  0.400A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_SDM40E20LS D  ( IS=54.8u RS=0.132 BV=20.0 IBV=250u \r
-+ CJO=199p  M=0.333 N=1.34 TT=7.20n )\r
-\r
-*SRC=SDMG0340L;DI_SDMG0340L;Diodes;Si;  40.0V  30.0mA  1.00ns   Diodes Inc. \r
-.MODEL DI_SBMG0340L D  ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u\r
-+ CJO=2.65p  M=0.333 N=2.82 TT=1.44n )\r
-\r
-*SRC=SDMG0340LA;DI_SDMG0340LA;Diodes;Si;  40.0V  30.0mA  1.00ns   Diodes Inc. Schottky diode, dual, one node of two \r
-.MODEL DI_SBMG0340LA D  ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u\r
-+ CJO=2.65p  M=0.333 N=2.82 TT=1.44n )\r
-\r
-*SRC=SDMG0340LC;DI_SDMG0340LC;Diodes;Si;  40.0V  30.0mA  1.00ns   Diodes Inc. Schottky diode, dual, one node of two \r
-.MODEL DI_SBMG0340LC D  ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u\r
-+ CJO=2.65p  M=0.333 N=2.82 TT=1.44n )\r
-\r
-*SRC=SDMG0340LS;DI_SDMG0340LS;Diodes;Si;  40.0V  30.0mA  1.00ns   Diodes Inc. Schottky diode, dual, one node of two \r
-.MODEL DI_SBMG0340LS D  ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u\r
-+ CJO=2.65p  M=0.333 N=2.82 TT=1.44n )\r
-\r
-*SRC=SDMK0340L;DI_SDMK0340L;Diodes;Si;  40.0V  30.0mA  3.00us   Diodes Inc. Schottky Barrier Diode\r
-.MODEL DI_SDMK0340L D  ( IS=11.2u RS=3.64 BV=40.0 IBV=500n\r
-+ CJO=2.65p  M=0.333 N=2.69 TT=4.32u )\r
-******************************************************************************************************************************\r
-\r
-*SRC=SDMP0340LAT;DI_SDMP0340LAT;Diodes;Si;  40.0V  30.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two \r
-.MODEL DI_SDMP0340LAT D  ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u \r
-+ CJO=2.65p  M=0.333 N=2.92 TT=7.20n )\r
-**************************************************************************************************************************************************\r
-\r
-*SRC=SDMP0340LCT;DI_SDMP0340LCT;Diodes;Si;  40.0V  30.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two \r
-.MODEL DI_SDMP0340LCT D  ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u \r
-+ CJO=2.65p  M=0.333 N=2.92 TT=7.20n )\r
-**************************************************************************************************************************************************\r
-\r
-*SRC=SDMP0340LST;DI_SDMP0340LST;Diodes;Si;  40.0V  30.0mA  5.00ns   Diodes Inc. Schottky diode, dual, one node of two \r
-.MODEL DI_SDMP0340LST D  ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u \r
-+ CJO=2.65p  M=0.333 N=2.92 TT=7.20n )\r
-**************************************************************************************************************************************************\r
-\r
-*SRC=SDMP0340LT;DI_SDMP0340LT;Diodes;Si;  40.0V  30.0mA  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_SDMP0340LT D  ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u \r
-+ CJO=2.65p  M=0.333 N=2.92 TT=7.20n )\r
-\r
-*SRC=2W005G;DI_2W005G;Diodes;Si;  50.0V  2.00A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_2W005G D  ( IS=28.4n RS=21.1m BV=50.0 IBV=5.00u\r+ CJO=29.6p  M=0.333 N=1.95 TT=4.32u )\r
-\r
-*SRC=2W01G;DI_2W01G;Diodes;Si;  100V  2.00A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_2W01G D  ( IS=28.4n RS=21.1m BV=100 IBV=5.00u\r+ CJO=29.6p  M=0.333 N=1.95 TT=4.32u )\r
-\r
-*SRC=2W02G;DI_2W02G;Diodes;Si;  200V  2.00A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_2W02G D  ( IS=28.4n RS=21.1m BV=200 IBV=5.00u\r+ CJO=29.6p  M=0.333 N=1.95 TT=4.32u )\r
-\r
-*SRC=2W04G;DI_2W04G;Diodes;Si;  400V  2.00A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_2W04G D  ( IS=28.4n RS=21.1m BV=400 IBV=5.00u\r+ CJO=29.6p  M=0.333 N=1.95 TT=4.32u )\r
-\r
-*SRC=2W06G;DI_2W06G;Diodes;Si;  600V  2.00A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_2W06G D  ( IS=28.4n RS=21.1m BV=600 IBV=5.00u\r+ CJO=29.6p  M=0.333 N=1.95 TT=4.32u )\r
-\r
-*SRC=2W08G;DI_2W08G;Diodes;Si;  800V  2.00A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_2W08G D  ( IS=28.4n RS=21.1m BV=800 IBV=5.00u\r+ CJO=29.6p  M=0.333 N=1.95 TT=4.32u )\r
-\r
-*SRC=2W10G;DI_2W10G;Diodes;Si;  1.00kV  2.00A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_2W10G D  ( IS=28.4n RS=21.1m BV=1.00k IBV=5.00u\r+ CJO=29.6p  M=0.333 N=1.95 TT=4.32u )\r
-\r
-*SRC=DF005M;DI_DF005M;Diodes;Si;  50.0V  1.00A  3.00us   Diodes Inc. Bridge -- for one element \r
-.MODEL DI_DF005M D  ( IS=4.42n RS=42.0m BV=50.0 IBV=10.0u \r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF005S;DI_DF005S;Diodes;Si;  50.0V  1.00A  3.00us   Diodes Inc. Bridge -- for one element \r
-.MODEL DI_DF005S D  ( IS=4.42n RS=42.0m BV=50.0 IBV=10.0u \r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF01M;DI_DF01M;Diodes;Si;  100V  1.00A  3.00us   Diodes Inc. Bridge -- for one element \r
-.MODEL DI_DF01M D  ( IS=4.42n RS=42.0m BV=100 IBV=10.0u \r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF01S;DI_DF01S;Diodes;Si;  100V  1.00A  3.00us   Diodes Inc. Bridge -- for one element \r
-.MODEL DI_DF01S D  ( IS=4.42n RS=42.0m BV=100 IBV=10.0u \r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF02M;DI_DF02M;Diodes;Si;  200V  1.00A  3.00us   Diodes Inc. Bridge -- for one element \r
-.MODEL DI_DF02M D  ( IS=4.42n RS=42.0m BV=200 IBV=10.0u \r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF02S;DI_DF02S;Diodes;Si;  200V  1.00A  3.00us   Diodes Inc. Bridge -- for one element \r
-.MODEL DI_DF02S D  ( IS=4.42n RS=42.0m BV=200 IBV=10.0u \r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF04M;DI_DF04M;Diodes;Si;  400V  1.00A  3.00us   Diodes Inc. Bridge -- for one element \r
-.MODEL DI_DF04M D  ( IS=4.42n RS=42.0m BV=400 IBV=10.0u \r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF04S;DI_DF04S;Diodes;Si;  400V  1.00A  3.00us   Diodes Inc. Bridge -- for one element \r
-.MODEL DI_DF04S D  ( IS=4.42n RS=42.0m BV=400 IBV=10.0u \r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF06M;DI_DF06M;Diodes;Si;  600V  1.00A  3.00us   Diodes Inc. Bridge -- for one element \r
-.MODEL DI_DF06M D  ( IS=4.42n RS=42.0m BV=600 IBV=10.0u \r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF06S;DI_DF06S;Diodes;Si;  600V  1.00A  3.00us   Diodes Inc. Bridge -- for one element \r
-.MODEL DI_DF06S D  ( IS=4.42n RS=42.0m BV=600 IBV=10.0u \r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF08M;DI_DF08M;Diodes;Si;  800V  1.00A  3.00us   Diodes Inc. Bridge -- for one element \r
-.MODEL DI_DF08M D  ( IS=4.42n RS=42.0m BV=800 IBV=10.0u \r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF08S;DI_DF08S;Diodes;Si;  800V  1.00A  3.00us   Diodes Inc. Bridge -- for one element \r
-.MODEL DI_DF08S D  ( IS=4.42n RS=42.0m BV=800 IBV=10.0u \r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF10M;DI_DF10M;Diodes;Si;  1.00kV  1.00A  3.00us   Diodes Inc. Bridge -- for one element \r
-.MODEL DI_DF10M D  ( IS=4.42n RS=42.0m BV=1.00k IBV=10.0u \r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF10S;DI_DF10S;Diodes;Si;  1.00kV  1.00A  3.00us   Diodes Inc. Bridge -- for one element \r
-.MODEL DI_DF10S D  ( IS=4.42n RS=42.0m BV=1.00k IBV=10.0u \r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF15005M;DI_DF15005M;Diodes;Si;  50.0V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_DF15005M D  ( IS=2.06n RS=28.1m BV=50.0 IBV=10.0u\r+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF15005S;DI_DF15005S;Diodes;Si;  50.0V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_DF15005S D  ( IS=2.06n RS=28.1m BV=50.0 IBV=10.0u\r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF1501M;DI_DF1501M;Diodes;Si;  100V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_DF1501M D  ( IS=2.06n RS=28.1m BV=100 IBV=10.0u\r+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF1501S;DI_DF1501S;Diodes;Si;  100V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_DF1501S D  ( IS=2.06n RS=28.1m BV=100 IBV=10.0u\r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF1502M;DI_DF1502M;Diodes;Si;  200V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_DF1502M D  ( IS=2.06n RS=28.1m BV=200 IBV=10.0u\r+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF1502S;DI_DF1502S;Diodes;Si;  200V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_DF1502S D  ( IS=2.06n RS=28.1m BV=200 IBV=10.0u\r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF1504M;DI_DF1504M;Diodes;Si;  400V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_DF1504M D  ( IS=2.06n RS=28.1m BV=400 IBV=10.0u\r+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF1504S;DI_DF1504S;Diodes;Si;  400V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_DF1504S D  ( IS=2.06n RS=28.1m BV=400 IBV=10.0u\r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF1506M;DI_DF1506M;Diodes;Si;  600V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_DF1506M D  ( IS=2.06n RS=28.1m BV=600 IBV=10.0u\r+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF1506S;DI_DF1506S;Diodes;Si;  600V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_DF1506S D  ( IS=2.06n RS=28.1m BV=600 IBV=10.0u\r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF1508M;DI_DF1508M;Diodes;Si;  800V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_DF1508M D  ( IS=2.06n RS=28.1m BV=800 IBV=10.0u\r+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF1508S;DI_DF1508S;Diodes;Si;  800V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_DF1508S D  ( IS=2.06n RS=28.1m BV=800 IBV=10.0u\r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF1510M;DI_DF1510M;Diodes;Si;  1.00kV  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_DF1510M D  ( IS=2.06n RS=28.1m BV=1.00k IBV=10.0u\r+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=DF1510S;DI_DF1510S;Diodes;Si;  1.00kV  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_DF1510S D  ( IS=2.06n RS=28.1m BV=1.00k IBV=10.0u\r
-+ CJO=65.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=GBJ15005;DI_GBJ15005;Diodes;Si;  50.0V  15.0A  3.00us   Diodes Inc.\r
-Bridge Rectifier -- for one element\r
-.MODEL DI_GBJ15005 D  ( IS=5.11u RS=3.43m BV=50.0 IBV=10.0u\r
-+ CJO=106p  M=0.333 N=2.44 TT=4.32u )\r
-\r
-*SRC=GBJ1501;DI_GBJ1501;Diodes;Si;  100V  15.0A  3.00us   Diodes Inc.\r
-Bridge Rectifier -- for one element\r
-.MODEL DI_GBJ1501 D  ( IS=5.11u RS=3.43m BV=100 IBV=10.0u\r
-+ CJO=106p  M=0.333 N=2.44 TT=4.32u )\r
-\r
-*SRC=GBJ1502;DI_GBJ1502;Diodes;Si;  200V  15.0A  3.00us   Diodes Inc.\r
-Bridge Rectifier -- for one element\r
-.MODEL DI_GBJ1502 D  ( IS=5.11u RS=3.43m BV=200 IBV=10.0u\r
-+ CJO=106p  M=0.333 N=2.44 TT=4.32u )\r
-\r
-*SRC=GBJ1504;DI_GBJ1504;Diodes;Si;  400V  15.0A  3.00us   Diodes Inc.\r
-Bridge Rectifier -- for one element\r
-.MODEL DI_GBJ1504 D  ( IS=5.11u RS=3.43m BV=400 IBV=10.0u\r
-+ CJO=106p  M=0.333 N=2.44 TT=4.32u )\r
-\r
-*SRC=GBJ1506;DI_GBJ1506;Diodes;Si;  600V  15.0A  3.00us   Diodes Inc.\r
-Bridge Rectifier -- for one element\r
-.MODEL DI_GBJ1506 D  ( IS=5.11u RS=3.43m BV=600 IBV=10.0u\r
-+ CJO=106p  M=0.333 N=2.44 TT=4.32u )\r
-\r
-*SRC=GBJ1508;DI_GBJ1508;Diodes;Si;  800V  15.0A  3.00us   Diodes Inc.\r
-Bridge Rectifier -- for one element\r
-.MODEL DI_GBJ1508 D  ( IS=5.11u RS=3.43m BV=800 IBV=10.0u\r
-+ CJO=106p  M=0.333 N=2.44 TT=4.32u )\r
-\r
-*SRC=GBJ1510;DI_GBJ1510;Diodes;Si;  1.00kV  15.0A  3.00us   Diodes Inc.\r
-Bridge Rectifier -- for one element\r
-.MODEL DI_GBJ1510 D  ( IS=5.11u RS=3.43m BV=1.00k IBV=10.0u\r
-+ CJO=106p  M=0.333 N=2.44 TT=4.32u )\r
-\r
-*SRC=GBJ20005;DI_GBJ20005;Diodes;Si;  50.0V  20.0A  3.00us   Diodes Inc.\r
-Bridge Rect. This model covers only one element.  There are four elements per pkg. .MODEL DI_GBJ20005 D  ( IS=15.1u RS=2.96m BV=50.0 IBV=10.0u\r
-+ CJO=111p  M=0.333 N=2.84 TT=4.32u )\r
-\r
-*SRC=GBJ2001;DI_GBJ2001;Diodes;Si;  100V  20.0A  3.00us   Diodes Inc.\r
-Bridge Rect. This model covers only one element.  There are four elements per pkg. .MODEL DI_GBJ2001 D  ( IS=15.1u RS=2.96m BV=100 IBV=10.0u\r
-+ CJO=111p  M=0.333 N=2.84 TT=4.32u )\r
-\r
-*SRC=GBJ2002;DI_GBJ2002;Diodes;Si;  200V  20.0A  3.00us   Diodes Inc.\r
-Bridge Rect. This model covers only one element.  There are four elements per pkg. .MODEL DI_GBJ2002 D  ( IS=15.1u RS=2.96m BV=200 IBV=10.0u\r
-+ CJO=111p  M=0.333 N=2.84 TT=4.32u )\r
-\r
-*SRC=GBJ2004;DI_GBJ2004;Diodes;Si;  400V  20.0A  3.00us   Diodes Inc.\r
-Bridge Rect. This model covers only one element.  There are four elements per pkg. .MODEL DI_GBJ2004 D  ( IS=15.1u RS=2.96m BV=400 IBV=10.0u\r
-+ CJO=111p  M=0.333 N=2.84 TT=4.32u )\r
-\r
-*SRC=GBJ2006;DI_GBJ2006;Diodes;Si;  600V  20.0A  3.00us   Diodes Inc.\r
-Bridge Rect. This model covers only one element.  There are four elements per pkg. .MODEL DI_GBJ2006 D  ( IS=15.1u RS=2.96m BV=600 IBV=10.0u\r
-+ CJO=111p  M=0.333 N=2.84 TT=4.32u )\r
-\r
-*SRC=GBJ2008;DI_GBJ2008;Diodes;Si;  800V  20.0A  3.00us   Diodes Inc.\r
-Bridge Rect. This model covers only one element.  There are four elements per pkg. .MODEL DI_GBJ2008 D  ( IS=15.1u RS=2.96m BV=800 IBV=10.0u\r
-+ CJO=111p  M=0.333 N=2.84 TT=4.32u )\r
-\r
-*SRC=GBJ2010;DI_GBJ2010;Diodes;Si;  1.00kV  20.0A  3.00us   Diodes Inc.\r
-Bridge Rect. This model covers only one element.  There are four elements per pkg. .MODEL DI_GBJ2010 D  ( IS=15.1u RS=2.96m BV=1.00k IBV=10.0u\r
-+ CJO=111p  M=0.333 N=2.84 TT=4.32u )\r
-\r
-*SRC=GBJ2510;DI_GBJ2510;Diodes;Si;  1.00kV  25.0A  3.00us   Diodes Inc. Bridge Rectifier--Per Element\r
-.MODEL DI_GBJ2510 D  ( IS=379n RS=2.84m BV=1.00k IBV=10.0u\r
-+ CJO=146p  M=0.333 N=2.07 TT=4.32u )\r
-\r
-*SRC=GBPC3506;DI_GBPC3506;Diodes;Si;  600V  35.0A  3.00us   Diodes Inc Rectifier\r
-.MODEL DI_GBPC3506 D  ( IS=162u RS=3.32m BV=600 IBV=5.00u\r
-+ CJO=477p  M=0.333 N=3.01 TT=4.32u )\r
-\r
-*SRC=GBU1002;DI_GBU1002;Diodes;Si;  200V  10.0A  3.00us   Diodes Inc.\r
-Bridge Rectifier -- Per Element\r
-.MODEL DI_GBU1002 D  ( IS=1.71f RS=7.00m BV=200 IBV=5.00u\r
-+ CJO=133p  M=0.333 N=0.900 TT=4.32u )\r
-\r
-*SRC=HD01;DI_HD01;Diodes;Si;  100V  0.800A  3.00us   Diodes Inc. Bridge\r
-Rectifier -- for one element\r
-.MODEL DI_HD01 D  ( IS=3.47n RS=42.6m BV=100 IBV=5.00u\r
-+ CJO=25.2p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=HD02;DI_HD02;Diodes;Si;  200V  0.800A  3.00us   Diodes Inc. Bridge\r
-Rectifier -- for one element\r
-.MODEL DI_HD02 D  ( IS=3.47n RS=42.6m BV=200 IBV=5.00u\r
-+ CJO=25.2p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=HD04;DI_HD04;Diodes;Si;  400V  0.800A  3.00us   Diodes Inc. Bridge\r
-Rectifier -- for one element\r
-.MODEL DI_HD04 D  ( IS=3.47n RS=42.6m BV=400 IBV=5.00u\r
-+ CJO=25.2p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=HD06;DI_HD06;Diodes;Si;  600V  0.800A  3.00us   Diodes Inc. Bridge\r
-Rectifier -- for one element\r
-.MODEL DI_HD06 D  ( IS=3.47n RS=42.6m BV=600 IBV=5.00u\r
-+ CJO=25.2p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=KBP005G;DI_KBP005G;Diodes;Si;  50.0V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_KBP005G D  ( IS=39.2u RS=28.1m BV=50.0 IBV=5.00u\r+ CJO=26.5p  M=0.333 N=4.38 TT=4.32u )\r
-\r
-*SRC=KBP01G;DI_KBP01G;Diodes;Si;  100V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_KBP01G D  ( IS=39.2u RS=28.1m BV=100 IBV=5.00u\r+ CJO=26.5p  M=0.333 N=4.38 TT=4.32u )\r
-\r
-*SRC=KBP02G;DI_KBP02G;Diodes;Si;  200V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_KBP02G D  ( IS=39.2u RS=28.1m BV=200 IBV=5.00u\r+ CJO=26.5p  M=0.333 N=4.38 TT=4.32u )\r
-\r
-*SRC=KBP04G;DI_KBP04G;Diodes;Si;  400V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_KBP04G D  ( IS=39.2u RS=28.1m BV=400 IBV=5.00u\r+ CJO=26.5p  M=0.333 N=4.38 TT=4.32u )\r
-\r
-*SRC=KBP06G;DI_KBP06G;Diodes;Si;  600V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_KBP06G D  ( IS=39.2u RS=28.1m BV=600 IBV=5.00u\r+ CJO=26.5p  M=0.333 N=4.38 TT=4.32u )\r
-\r
-*SRC=KBP08G;DI_KBP08G;Diodes;Si;  800V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_KBP08G D  ( IS=39.2u RS=28.1m BV=800 IBV=5.00u\r+ CJO=26.5p  M=0.333 N=4.38 TT=4.32u )\r
-\r
-*SRC=KBP10G;DI_KBP10G;Diodes;Si;  1.00kV  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r.MODEL DI_KBP10G D  ( IS=39.2u RS=28.1m BV=1.00k IBV=5.00u\r+ CJO=26.5p  M=0.333 N=4.38 TT=4.32u )\r
-\r
-*SRC=KBP2005G;DI_KBP2005G;Diodes;Si;  50.0V  2.00A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_KBP2005G D  ( IS=143n RS=21.1m BV=50.0 IBV=5.00u\r
-+ CJO=46.2p  M=0.333 N=2.12 TT=4.32u )\r
-\r
-*SRC=KBP201G;DI_KBP201G;Diodes;Si;  100V  2.00A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_KBP201G D  ( IS=143n RS=21.1m BV=100 IBV=5.00u\r
-+ CJO=46.2p  M=0.333 N=2.12 TT=4.32u )\r
-\r
-*SRC=KBP202G;DI_KBP202G;Diodes;Si;  200V  2.00A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_KBP202G D  ( IS=143n RS=21.1m BV=200 IBV=5.00u\r
-+ CJO=46.2p  M=0.333 N=2.12 TT=4.32u )\r
-\r
-*SRC=KBP204G;DI_KBP204G;Diodes;Si;  400V  2.00A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_KBP204G D  ( IS=143n RS=21.1m BV=400 IBV=5.00u\r
-+ CJO=46.2p  M=0.333 N=2.12 TT=4.32u )\r
-\r
-*SRC=KBP206G;DI_KBP206G;Diodes;Si;  600V  2.00A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_KBP206G D  ( IS=143n RS=21.1m BV=600 IBV=5.00u\r
-+ CJO=46.2p  M=0.333 N=2.12 TT=4.32u )\r
-\r
-*SRC=KBP208G;DI_KBP208G;Diodes;Si;  800V  2.00A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_KBP208G D  ( IS=143n RS=21.1m BV=800 IBV=5.00u\r
-+ CJO=46.2p  M=0.333 N=2.12 TT=4.32u )\r
-\r
-*SRC=KBP210G;DI_KBP210G;Diodes;Si;  1.00kV  2.00A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_KBP210G D  ( IS=143n RS=21.1m BV=1.00k IBV=5.00u\r
-+ CJO=46.2p  M=0.333 N=2.12 TT=4.32u )\r
-\r
-*SRC=PBPC301;DI_PBPC301;Diodes;Si;  50.0V  3.00A  3.00us   Diodes Inc. Bridge Rectifier, per element\r.MODEL DI_PBPC301 D  ( IS=492n RS=14.1m BV=50.0 IBV=10.0u\r+ CJO=102p  M=0.333 N=2.45 TT=4.32u ) )\r
-\r
-*SRC=PBPC302;DI_PBPC302;Diodes;Si;  100V  3.00A  3.00us   Diodes Inc. Bridge Rectifier, per element\r.MODEL DI_PBPC302 D  ( IS=492n RS=14.1m BV=100 IBV=10.0u\r+ CJO=102p  M=0.333 N=2.45 TT=4.32u ) )\r
-\r
-*SRC=PBPC303;DI_PBPC303;Diodes;Si;  200V  3.00A  3.00us   Diodes Inc. Bridge Rectifier, per element\r.MODEL DI_PBPC303 D  ( IS=492n RS=14.1m BV=200 IBV=10.0u\r+ CJO=102p  M=0.333 N=2.45 TT=4.32u ) )\r
-\r
-*SRC=PBPC304;DI_PBPC304;Diodes;Si;  400V  3.00A  3.00us   Diodes Inc. Bridge Rectifier, per element\r.MODEL DI_PBPC304 D  ( IS=492n RS=14.1m BV=400 IBV=10.0u\r+ CJO=102p  M=0.333 N=2.45 TT=4.32u ) )\r
-\r
-*SRC=PBPC305;DI_PBPC305;Diodes;Si;  600V  3.00A  3.00us   Diodes Inc. Bridge Rectifier, per element\r.MODEL DI_PBPC305 D  ( IS=492n RS=14.1m BV=600 IBV=10.0u\r+ CJO=102p  M=0.333 N=2.45 TT=4.32u ) )\r
-\r
-*SRC=PBPC306;DI_PBPC306;Diodes;Si;  800V  3.00A  3.00us   Diodes Inc. Bridge Rectifier, per element\r.MODEL DI_PBPC306 D  ( IS=492n RS=14.1m BV=800 IBV=10.0u\r+ CJO=102p  M=0.333 N=2.45 TT=4.32u ) )\r
-\r
-*SRC=PBPC307;DI_PBPC307;Diodes;Si;  1.00kV  3.00A  3.00us   Diodes Inc. Bridge Rectifier, per element\r.MODEL DI_PBPC307 D  ( IS=492n RS=14.1m BV=1.00k IBV=10.0u\r+ CJO=102p  M=0.333 N=2.45 TT=4.32u ) )\r
-\r
-*SRC=RH02;DI_RH02;Diodes;Si;  200V  0.500A  150ns   Diodes Inc. Fast Recovery Bridge Rectifier, per node\r
-.MODEL DI_RH02 D  ( IS=2.25n RS=0.100 BV=200 IBV=5.00u\r
-+ CJO=24.0p  M=0.333 N=1.70 TT=216n )\r
-\r
-*SRC=RH04;DI_RH04;Diodes;Si;  400V  0.500A  150ns   Diodes Inc. Fast Recovery Bridge Rectifier, per node\r
-.MODEL DI_RH04 D  ( IS=2.25n RS=0.100 BV=400 IBV=5.00u\r
-+ CJO=24.0p  M=0.333 N=1.70 TT=216n )\r
-\r
-*SRC=RH06;DI_RH06;Diodes;Si;  600V  0.500A  250ns   Diodes Inc. Fast Recovery Bridge Rectifier, per node\r
-.MODEL DI_RH06 D  ( IS=2.25n RS=0.100 BV=600 IBV=5.00u\r
-+ CJO=24.0p  M=0.333 N=1.70 TT=360n )\r
-\r
-*SRC=W005G;DI_W005G;Diodes;Si;  50.0V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_W005G D  ( IS=8.63u RS=28.0m BV=50.0 IBV=5.00u\r
-+ CJO=22.5p  M=0.333 N=3.21 TT=4.32u )\r
-\r
-*SRC=W01G;DI_W01G;Diodes;Si;  100V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_W01G D  ( IS=8.63u RS=28.0m BV=100 IBV=5.00u\r
-+ CJO=22.5p  M=0.333 N=3.21 TT=4.32u )\r
-\r
-*SRC=W02G;DI_W02G;Diodes;Si;  200V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_W02G D  ( IS=8.63u RS=28.0m BV=200 IBV=5.00u\r
-+ CJO=22.5p  M=0.333 N=3.21 TT=4.32u )\r
-\r
-*SRC=W04G;DI_W04G;Diodes;Si;  400V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_W04G D  ( IS=8.63u RS=28.0m BV=400 IBV=5.00u\r
-+ CJO=22.5p  M=0.333 N=3.21 TT=4.32u )\r
-\r
-*SRC=W06G;DI_W06G;Diodes;Si;  600V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_W06G D  ( IS=8.63u RS=28.0m BV=600 IBV=5.00u\r
-+ CJO=22.5p  M=0.333 N=3.21 TT=4.32u )\r
-\r
-*SRC=W08G;DI_W08G;Diodes;Si;  800V  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_W08G D  ( IS=8.63u RS=28.0m BV=800 IBV=5.00u\r
-+ CJO=22.5p  M=0.333 N=3.21 TT=4.32u )\r
-\r
-*SRC=W10G;DI_W10G;Diodes;Si;  1.00kV  1.50A  3.00us   Diodes Inc. Bridge -- for one element\r
-.MODEL DI_W10G D  ( IS=8.63u RS=28.0m BV=1.00k IBV=5.00u\r
-+ CJO=22.5p  M=0.333 N=3.21 TT=4.32u )\r
-\r
-*SRC=1N5817M;DI_1N5817M;Diodes;Si;  20.0V  1.00A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_1N5817M D  ( IS=363u RS=25.0m BV=20.0 IBV=1.00m \r
-+ CJO=239p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=1N5818M;DI_1N5818M;Diodes;Si;  30.0V  1.00A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_1N5818M D  ( IS=388u RS=55.3m BV=30.0 IBV=1.00m \r
-+ CJO=239p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=1N5819HW;DI_1N5819HW;Diodes;Si;  40.0V  1.00A  5.00ns   Diodes Inc.\r
-Schottky\r
-.MODEL DI_1N5819HW D  ( IS=191u RS=42.0m BV=40.0 IBV=1.00m\r
-+ CJO=239p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=1N5819M;DI_1N5819M;Diodes;Si;  40.0V  1.00A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_1N5819M D  ( IS=41.5u RS=70.4m BV=40.0 IBV=1.00m \r
-+ CJO=239p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=B0520LW;DI_B0520LW;Diodes;Si;  20.0V  0.500A  5.00ns   Diodes Inc. Schottky\r\r
-.MODEL DI_B0520LW D  ( IS=195u RS=49.4m BV=20.0 IBV=250u\r\r
-+ CJO=199p  M=0.333 N=1.72 TT=7.20n )\r
-\r
-*SRC=B0520WS;DI_B0520WS;Diodes;Si;  20.0V  0.500A  5.00ns   Diodes Inc. Schottky rectifier \r
-.MODEL DI_B0520WS D  ( IS=1.96u RS=0.131 BV=20.0 IBV=250u \r
-+ CJO=170p  M=0.333 N=0.907 TT=7.20u )\r
-\r
-*SRC=B0530W;DI_B0530W;Diodes;Si;  30.0V  0.500A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_B0530W D  ( IS=47.4u RS=26.8m BV=30.0 IBV=130u \r
-+ CJO=225p  M=0.333 N=1.66 TT=7.20n )\r
-\r
-*SRC=B0530WS;DI_B0530WS;Diodes;Si;  30.0V  0.500A  10.0ns   Diodes Inc. Schottky \r
-.MODEL DI_B0530WS D  ( IS=897u RS=72.9m BV=30.0 IBV=500u \r
-+ CJO=79.6p  M=0.333 N=2.85 TT=14.4n )\r
-\r
-*SRC=B0540W;DI_B0540W;Diodes;Si;  40.0V  0.500A  10.0ns   Diodes Inc. Schottky \r
-.MODEL DI_B0540W D  ( IS=55.9p RS=0.125 BV=40.0 IBV=20.0u \r
-+ CJO=225p  M=0.333 N=0.700 TT=14.4n )\r
-\r
-*SRC=B1100;DI_B1100;Diodes;Si;  100V  1.00A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_B1100 D  ( IS=89.3u RS=42.2m BV=100 IBV=500n \r
-+ CJO=66.3p  M=0.333 N=2.45 TT=7.20n )\r
-\r
-*SRC=B1100B;DI_B1100B;Diodes;Si;  100V  1.00A  5.00ns   Diodes Inc.\r
-Schottky\r
-.MODEL DI_B1100B D  ( IS=89.3u RS=42.2m BV=100 IBV=500n\r
-+ CJO=66.3p  M=0.333 N=2.45 TT=7.20n )\r
-\r
-*SRC=B1100LB;DI_B1100LB;Diodes;Si;  100V  1.00A  10.0ns   Diodes Inc.\r
-Schottky\r
-.MODEL DI_B1100LB D  ( IS=20.0n RS=24.7m BV=100 IBV=500n\r
-+ CJO=225p  M=0.333 N=1.22 TT=14.4n )\r
-\r
-*SRC=B120;DI_B120;Diodes;Si;  20.0V  1.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B120 D  ( IS=39.6u RS=50.2m BV=20.0 IBV=500u\r
-+ CJO=265p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=B120B;DI_B120B;Diodes;Si;  20.0V  1.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B120B D  ( IS=39.6u RS=50.2m BV=20.0 IBV=500u\r
-+ CJO=265p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=B130;DI_B130;Diodes;Si;  30.0V  1.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B130 D  ( IS=39.6u RS=50.2m BV=30.0 IBV=500u\r
-+ CJO=265p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=B130B;DI_B130B;Diodes;Si;  30.0V  1.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B130B D  ( IS=39.6u RS=50.2m BV=30.0 IBV=500u\r
-+ CJO=265p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=B130L;DI_B130L;Diodes;Si;  30.0V  1.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B130L D  ( IS=188u RS=18.5m BV=30.0 IBV=1.00m\r
-+ CJO=331p  M=0.333 N=1.65 TT=7.20n )\r
-\r
-*SRC=B130LAW;DI_B130LAW;Diodes;Si;  30.0V  1.00A  5.00ns   Diodes Inc.\r
-Schottky\r
-.MODEL DI_B130LAW D  ( IS=407u RS=75.5m BV=30.0 IBV=1.00m\r
-+ CJO=119p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=B130LB;DI_B130LB;Diodes;Si;  30.0V  1.00A  10.0ns   Diodes Inc.\r
-Schottky\r
-.MODEL DI_B130LB D  ( IS=458u RS=28.0m BV=30.0 IBV=1.00m\r
-+ CJO=159p  M=0.333 N=1.70 TT=14.4n )\r
-\r
-*SRC=B140;DI_B140;Diodes;Si;  40.0V  1.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B140 D  ( IS=39.6u RS=50.2m BV=40.0 IBV=500u\r
-+ CJO=265p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=B140B;DI_B140B;Diodes;Si;  40.0V  1.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B140B D  ( IS=39.6u RS=50.2m BV=40.0 IBV=500u\r
-+ CJO=265p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=B140HB;DI_B140HB;Diodes;Si;  40.0V  1.00A  10.0ns   Diodes Inc.\r
-Schottky\r
-.MODEL DI_B140HB D  ( IS=31.0u RS=42.1m BV=40.0 IBV=1.00m\r
-+ CJO=159p  M=0.333 N=1.70 TT=14.4n )\r
-\r
-*SRC=B150;DI_B150;Diodes;Si;  50.0V  1.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B150 D  ( IS=15.7u RS=42.0m BV=50.0 IBV=500u\r
-+ CJO=133p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=B150B;DI_B150B;Diodes;Si;  50.0V  1.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B150B D  ( IS=15.7u RS=42.0m BV=50.0 IBV=500u\r
-+ CJO=133p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=B160;DI_B160;Diodes;Si;  60.0V  1.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B160 D  ( IS=15.7u RS=42.0m BV=60.0 IBV=500u\r
-+ CJO=133p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=B160B;DI_B160B;Diodes;Si;  60.0V  1.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B160B D  ( IS=15.7u RS=42.0m BV=60.0 IBV=500u\r
-+ CJO=133p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=B170;DI_B170;Diodes;Si;  70.0V  1.00A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_B170 D  ( IS=89.3u RS=42.2m BV=70.0 IBV=500n \r
-+ CJO=66.3p  M=0.333 N=2.45 TT=7.20n )\r
-\r
-*SRC=B170B;DI_B170B;Diodes;Si;  70.0V  1.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B170B D  ( IS=89.3u RS=42.2m BV=70.0 IBV=500n\r
-+ CJO=66.3p  M=0.333 N=2.45 TT=7.20n )\r
-\r
-*SRC=B180;DI_B180;Diodes;Si;  80.0V  1.00A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_B180 D  ( IS=89.3u RS=42.2m BV=80.0 IBV=500n \r
-+ CJO=66.3p  M=0.333 N=2.45 TT=7.20n )\r
-\r
-*SRC=B180B;DI_B180B;Diodes;Si;  80.0V  1.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B180B D  ( IS=89.3u RS=42.2m BV=80.0 IBV=500n\r
-+ CJO=66.3p  M=0.333 N=2.45 TT=7.20n )\r
-\r
-*SRC=B190;DI_B190;Diodes;Si;  90.0V  1.00A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_B190 D  ( IS=89.3u RS=42.2m BV=90.0 IBV=500n \r
-+ CJO=66.3p  M=0.333 N=2.45 TT=7.20n )\r
-\r
-*SRC=B190B;DI_B190B;Diodes;Si;  90.0V  1.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B190B D  ( IS=89.3u RS=42.2m BV=90.0 IBV=500n\r
-+ CJO=66.3p  M=0.333 N=2.45 TT=7.20n )\r
-\r
-*SRC=B2100;DI_B2100;Diodes;Si;  100.0V  2.00A  10.0ns   Diodes Inc Schottky\r
-.MODEL DI_B2100 D  ( IS=746u RS=21.0m BV=100.0 IBV=500u\r
-+ CJO=179p  M=0.333 N=2.87 TT=14.4n )\r
-\r
-*SRC=B220;DI_B220;Diodes;Si;  20.0V  2.00A  1.00ns   Diodes Inc. \r
-.MODEL DI_B220 D  ( IS=7.98u RS=13.4m BV=20.0 IBV=500u\r
-+ CJO=370p  M=0.333 N=1.13 TT=1.44n )\r
-\r
-*SRC=B220A;DI_B220A;Diodes;Si;  20.0V  2.00A  1.00ns   Diodes Inc. \r
-.MODEL DI_B220A D  ( IS=7.98u RS=13.4m BV=20.0 IBV=500u\r
-+ CJO=370p  M=0.333 N=1.13 TT=1.44n )\r
-\r
-*SRC=B230;DI_B230;Diodes;Si;  30.0V  2.00A  1.00ns   Diodes Inc. \r
-.MODEL DI_B230 D  ( IS=7.98u RS=13.4m BV=30.0 IBV=500u\r
-+ CJO=370p  M=0.333 N=1.13 TT=1.44n )\r
-\r
-*SRC=B230A;DI_B230A;Diodes;Si;  30.0V  2.00A  1.00ns   Diodes Inc. \r
-.MODEL DI_B230A D  ( IS=7.98u RS=13.4m BV=30.0 IBV=500u\r
-+ CJO=370p  M=0.333 N=1.13 TT=1.44n )\r
-\r
-*SRC=B240;DI_B240;Diodes;Si;  40.0V  2.00A  1.00ns   Diodes Inc. \r
-.MODEL DI_B240 D  ( IS=7.98u RS=13.4m BV=40.0 IBV=500u\r
-+ CJO=370p  M=0.333 N=1.13 TT=1.44n )\r
-\r
-*SRC=B240A;DI_B240A;Diodes;Si;  40.0V  2.00A  1.00ns   Diodes Inc. \r
-.MODEL DI_B240A D  ( IS=7.98u RS=13.4m BV=40.0 IBV=500u\r
-+ CJO=370p  M=0.333 N=1.13 TT=1.44n )\r
-\r
-*SRC=B250;DI_B250;Diodes;Si;  50.0V  2.00A  1.00ns   Diodes Inc. \r
-.MODEL DI_B250 D  ( IS=6.08u RS=14.9m BV=50.0 IBV=500u\r
-+ CJO=370p  M=0.333 N=1.55 TT=1.44n )\r
-\r
-*SRC=B250A;DI_B250A;Diodes;Si;  50.0V  2.00A  1.00ns   Diodes Inc. \r
-.MODEL DI_B250A D  ( IS=6.08u RS=14.9m BV=50.0 IBV=500u\r
-+ CJO=370p  M=0.333 N=1.55 TT=1.44n )\r
-\r
-*SRC=B260;DI_B260;Diodes;Si;  60.0V  2.00A  1.00ns   Diodes Inc. \r
-.MODEL DI_B260 D  ( IS=6.08u RS=14.9m BV=60.0 IBV=500u\r
-+ CJO=370p  M=0.333 N=1.55 TT=1.44n )\r
-\r
-*SRC=B260A;DI_B260A;Diodes;Si;  60.0V  2.00A  1.00ns   Diodes Inc. \r
-.MODEL DI_B260A D  ( IS=6.08u RS=14.9m BV=60.0 IBV=500u\r
-+ CJO=370p  M=0.333 N=1.55 TT=1.44n )\r
-\r
-*SRC=B270;DI_B270;Diodes;Si;  70.0V  2.00A  10.0ns   Diodes Inc Schottky\r
-.MODEL DI_B270 D  ( IS=746u RS=21.0m BV=70.0 IBV=500u\r
-+ CJO=179p  M=0.333 N=2.87 TT=14.4n )\r
-\r
-*SRC=B280;DI_B280;Diodes;Si;  80.0V  2.00A  10.0ns   Diodes Inc Schottky\r
-.MODEL DI_B280 D  ( IS=746u RS=21.0m BV=80.0 IBV=500u\r
-+ CJO=179p  M=0.333 N=2.87 TT=14.4n )\r
-\r
-*SRC=B290;DI_B290;Diodes;Si;  90.0V  2.00A  10.0ns   Diodes Inc Schottky\r
-.MODEL DI_B290 D  ( IS=746u RS=21.0m BV=90.0 IBV=500u\r
-+ CJO=179p  M=0.333 N=2.87 TT=14.4n )\r
-\r
-*SRC=B3100;DI_B3100;Diodes;Si;  100V  3.00A  10.0ns   Diodes Inc. Schottky\r
-.MODEL DI_B3100 D  ( IS=916u RS=14.1m BV=100 IBV=500u\r
-+ CJO=159p  M=0.333 N=3.04 TT=14.4n )\r
-\r
-*SRC=B320;DI_B320;Diodes;Si;  20.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B320 D  ( IS=9.90n RS=14.0m BV=20.0 IBV=500u\r
-+ CJO=464p  M=0.333 N=0.775 TT=7.20n )\r
-\r
-*SRC=B320A;DI_B320A;Diodes;Si;  20.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B320A D  ( IS=9.90n RS=14.0m BV=20.0 IBV=500u\r
-+ CJO=464p  M=0.333 N=0.775 TT=7.20n )\r
-\r
-*SRC=B320B;DI_B320B;Diodes;Si;  20.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B320B D  ( IS=9.90n RS=14.0m BV=20.0 IBV=500u\r
-+ CJO=464p  M=0.333 N=0.775 TT=7.20n )\r
-\r
-*SRC=B330;DI_B330;Diodes;Si;  30.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B330 D  ( IS=9.90n RS=14.0m BV=30.0 IBV=500u\r
-+ CJO=464p  M=0.333 N=0.775 TT=7.20n )\r
-\r
-*SRC=B330A;DI_B330A;Diodes;Si;  30.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B330A D  ( IS=9.90n RS=14.0m BV=30.0 IBV=500u\r
-+ CJO=464p  M=0.333 N=0.775 TT=7.20n )\r
-\r
-*SRC=B330B;DI_B330B;Diodes;Si;  30.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B330B D  ( IS=9.90n RS=14.0m BV=30.0 IBV=500u\r
-+ CJO=464p  M=0.333 N=0.775 TT=7.20n )\r
-\r
-*SRC=B340;DI_B340;Diodes;Si;  40.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B340 D  ( IS=9.90n RS=14.0m BV=40.0 IBV=500u\r
-+ CJO=464p  M=0.333 N=0.775 TT=7.20n )\r
-\r
-*SRC=B340A;DI_B340A;Diodes;Si;  40.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B340A D  ( IS=9.90n RS=14.0m BV=40.0 IBV=500u\r
-+ CJO=464p  M=0.333 N=0.775 TT=7.20n )\r
-\r
-*SRC=B340B;DI_B340B;Diodes;Si;  40.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B340B D  ( IS=9.90n RS=14.0m BV=40.0 IBV=500u\r
-+ CJO=464p  M=0.333 N=0.775 TT=7.20n )\r
-\r
-*SRC=B340LA;DI_B340LA;Diodes;Si;  40.0V  3.00A  10.0ns   Diodes Inc.\r
-Schottky\r
-.MODEL DI_B340LA D  ( IS=1.15m RS=17.8m BV=40.0 IBV=2.00m\r
-+ CJO=411p  M=0.333 N=1.70 TT=14.4n )\r
-\r
-*SRC=B340LB;DI_B340LB;Diodes;Si;  40.0V  3.00A  10.0ns   Diodes Inc.\r
-Schottky\r
-.MODEL DI_B340LB D  ( IS=1.15m RS=17.8m BV=40.0 IBV=2.00m\r
-+ CJO=411p  M=0.333 N=1.70 TT=14.4n )\r
-\r
-*SRC=B350;DI_B350;Diodes;Si;  50.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B350 D  ( IS=9.90n RS=14.0m BV=50.0 IBV=500u\r
-+ CJO=464p  M=0.333 N=0.775 TT=7.20n )\r
-\r
-*SRC=B350A;DI_B350A;Diodes;Si;  50.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B350A D  ( IS=9.90n RS=14.0m BV=50.0 IBV=500u\r
-+ CJO=464p  M=0.333 N=0.775 TT=7.20n )\r
-\r
-*SRC=B350B;DI_B350B;Diodes;Si;  50.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B350B D  ( IS=9.90n RS=14.0m BV=50.0 IBV=500u\r
-+ CJO=464p  M=0.333 N=0.775 TT=7.20n )\r
-\r
-*SRC=B360;DI_B360;Diodes;Si;  60.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B360 D  ( IS=9.90n RS=14.0m BV=60.0 IBV=500u\r
-+ CJO=464p  M=0.333 N=0.775 TT=7.20n )\r
-\r
-*SRC=B360A;DI_B360A;Diodes;Si;  60.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B360A D  ( IS=9.90n RS=14.0m BV=60.0 IBV=500u\r
-+ CJO=464p  M=0.333 N=0.775 TT=7.20n )\r
-\r
-*SRC=B360B;DI_B360B;Diodes;Si;  60.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_B360B D  ( IS=9.90n RS=14.0m BV=60.0 IBV=500u\r
-+ CJO=464p  M=0.333 N=0.775 TT=7.20n )\r
-\r
-*SRC=B370;DI_B370;Diodes;Si;  70.0V  3.00A  10.0ns   Diodes Inc. Schottky\r
-.MODEL DI_B370 D  ( IS=916u RS=14.1m BV=70.0 IBV=500u\r
-+ CJO=159p  M=0.333 N=3.04 TT=14.4n )\r
-\r
-*SRC=B380;DI_B380;Diodes;Si;  80.0V  3.00A  10.0ns   Diodes Inc. Schottky\r
-.MODEL DI_B380 D  ( IS=916u RS=14.1m BV=80.0 IBV=500u\r
-+ CJO=159p  M=0.333 N=3.04 TT=14.4n )\r
-\r
-*SRC=B390;DI_B390;Diodes;Si;  90.0V  3.00A  10.0ns   Diodes Inc. Schottky\r
-.MODEL DI_B390 D  ( IS=916u RS=14.1m BV=90.0 IBV=500u\r
-+ CJO=159p  M=0.333 N=3.04 TT=14.4n )\r
-\r
-*SRC=B520C;DI_B520C;Diodes;Si;  20.0V  5.00A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_B520C D  ( IS=617u RS=10.0m BV=20.0 IBV=500u \r
-+ CJO=497p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=B530C;DI_B530C;Diodes;Si;  30.0V  5.00A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_B530C D  ( IS=617u RS=10.0m BV=30.0 IBV=500u \r
-+ CJO=497p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=B540C;DI_B540C;Diodes;Si;  40.0V  5.00A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_B540C D  ( IS=617u RS=10.0m BV=40.0 IBV=500u \r
-+ CJO=497p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=B550C;DI_B550C;Diodes;Si;  50.0V  5.00A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_B550C D  ( IS=66.7u RS=14.1m BV=50.0 IBV=500u \r
-+ CJO=497p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=B560C;DI_B560C;Diodes;Si;  60.0V  5.00A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_B560C D  ( IS=66.7u RS=14.1m BV=60.0 IBV=500u \r
-+ CJO=497p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BAT1000;DI_BAT1000;Diodes;Si;  40.0V  1.00A  5.00ns   Diodes Inc. Schottky Barrier Rectifier \r
-.MODEL DI_BAT1000 D  ( IS=874n RS=65.3m BV=40.0 IBV=100u \r
-+ CJO=175p  M=0.333 N=0.823 TT=7.20n )\r
-\r
-*SRC=BAT400D;DI_BAT400D;Diodes;Si;  40.0V  0.500A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_BAT400D D  ( IS=1.80u RS=0.103 BV=40.0 IBV=50.0u \r
-+ CJO=119p  M=0.333 N=1.26 TT=7.20n )\r
-\r
-*SRC=BAT750;DI_BAT750;Diodes;Si;  40.0V  0.750A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_BAT750 D  ( IS=23.1u RS=82.3m BV=40.0 IBV=100u \r
-+ CJO=225p  M=0.333 N=1.16 TT=7.20n )\r
-\r
-*SRC=MBRB1530CT;DI_MBRB1530CT;Diodes;Si;  30.0V  15.0A  30.0ns   Diodes\r
-Inc. Schottky -- one element of device\r
-.MODEL DI_MBRB1530CT D  ( IS=71.5u RS=2.81m BV=30.0 IBV=100u\r
-+ CJO=464p  M=0.333 N=1.61 TT=43.2n )\r
-\r
-*SRC=MBRB1535CT;DI_MBRB1535CT;Diodes;Si;  35.0V  15.0A  30.0ns   Diodes\r
-Inc. Schottky -- one element of device\r
-.MODEL DI_MBRB1535CT D  ( IS=71.5u RS=2.81m BV=35.0 IBV=100u\r
-+ CJO=464p  M=0.333 N=1.61 TT=43.2n )\r
-\r
-*SRC=MBRB1540CT;DI_MBRB1540CT;Diodes;Si;  40.0V  15.0A  30.0ns   Diodes\r
-Inc. Schottky -- one element of device\r
-.MODEL DI_MBRB1540CT D  ( IS=71.5u RS=2.81m BV=40.0 IBV=100u\r
-+ CJO=464p  M=0.333 N=1.61 TT=43.2n )\r
-\r
-*SRC=MBRB1540CT;DI_MBRB1540CT;Diodes;Si;  40.0V  15.0A  30.0ns   Diodes\r
-Inc. Schottky -- one element of device\r
-.MODEL DI_MBRB1540CT D  ( IS=71.5u RS=2.81m BV=40.0 IBV=100u\r
-+ CJO=464p  M=0.333 N=1.61 TT=43.2n )\r
-\r
-*SRC=MBRB20100CT;DI_MBRB20100CT;Diodes;Si;  100V  20.0A  10.0ns   Diodes Inc. Schottky Rectifier, Dual Unit, Model for One Node\r
-.MODEL DI_MBRB20100CT D  ( IS=750u RS=3.34m BV=100 IBV=100u\r
-+ CJO=508p  M=0.333 N=2.41 TT=14.4n )\r
-\r
-*SRC=MBRB2070CT;DI_MBRB2070CT;Diodes;Si;  70.0V  20.0A  10.0ns   Diodes Inc. Schottky Rectifier, Dual Unit, Model for One Node\r
-.MODEL DI_MBRB2070CT D  ( IS=750u RS=3.34m BV=70.0 IBV=100u\r
-+ CJO=508p  M=0.333 N=2.41 TT=14.4n )\r
-\r
-*SRC=MBRB2080CT;DI_MBRB2080CT;Diodes;Si;  80.0V  20.0A  10.0ns   Diodes Inc. Schottky Rectifier, Dual Unit, Model for One Node\r
-.MODEL DI_MBRB2080CT D  ( IS=750u RS=3.34m BV=80.0 IBV=100u\r
-+ CJO=508p  M=0.333 N=2.41 TT=14.4n )\r
-\r
-*SRC=MBRB2090CT;DI_MBRB2090CT;Diodes;Si;  90.0V  20.0A  10.0ns   Diodes Inc. Schottky Rectifier, Dual Unit, Model for One Node\r
-.MODEL DI_MBRB2090CT D  ( IS=750u RS=3.34m BV=90.0 IBV=100u\r
-+ CJO=508p  M=0.333 N=2.41 TT=14.4n )\r
-\r
-*SRC=MBRD1035CTL;DI_MBRD1035CTL;Diodes;Si;  35.0V  5.00A  10.0ns   Diodes Inc Schottky, Dual, Model for one node\r.MODEL DI_MBRD1035CTL D  ( IS=2.14m RS=6.38m BV=35.0 IBV=2.00m\r+ CJO=629p  M=0.333 N=3.30 TT=14.4n )\r
-\r
-*SRC=MBRD1040;DI_MBRD1040;Diodes;Si;  40.0V  10.0A  5.00ns   Diodes Inc.\r
-Schottky\r
-.MODEL DI_MBRD1040 D  ( IS=354u RS=4.20m BV=40.0 IBV=300u\r
-+ CJO=2.65n  M=0.333 N=1.19 TT=7.20n )\r
-\r
-*SRC=MBRD1040CT;DI_MBRD1040CT;Diodes;Si;  40.0V  5.00A  10.0ns   Diodes Inc Schottky, Dual, Model for one node\r.MODEL DI_MBRD1040CT D  ( IS=2.14m RS=6.38m BV=40.0 IBV=150u\r+ CJO=925p  M=0.333 N=3.30 TT=14.4n )\r
-\r
-*SRC=MBRD460CT;DI_MBRD460CT;Diodes;Si;  60.0V  2.00A  10.0ns   Diodes Inc Schottky, Dual, Model for one node\r.MODEL DI_MBRD460CT D  ( IS=1.45m RS=7.62u BV=60.0 IBV=100u\r+ CJO=333p  M=0.333 N=4.78 TT=14.4n )\r
-\r
-*SRC=MBRD835L;DI_MBRD835L;Diodes;Si;  35.0V  8.00A  10.0ns   Diodes Inc Schottky\r.MODEL DI_MBRD835L D  ( IS=9.28u RS=9.26m BV=35.0 IBV=1.40m\r+ CJO=1.11n  M=0.333 N=1.06 TT=14.4n )\r
-\r
-*SRC=MBRM3100;DI_MBRM3100;Diodes;Si;  100V  3.00A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_MBRM3100 D  ( IS=88.1u RS=14.0m BV=100 IBV=100u \r
-+ CJO=239p  M=0.333 N=2.12 TT=7.20n )\r
-\r
-*SRC=MBRM360;DI_MBRM360;Diodes;Si;  60.0V  3.00A  10.0ns   Diodes Inc. Schottky \r
-.MODEL DI_MBRM360 D  ( IS=5.99u RS=16.5m BV=60.0 IBV=200u \r
-+ CJO=240p  M=0.333 N=1.27 TT=14.4n )\r
-\r
-*SRC=MBRM5100;DI_MBRM5100;Diodes;Si;  100V  5.00A  10.0ns   Diodes Inc. Schottky \r
-.MODEL DI_MBRM5100 D  ( IS=62.9u RS=6.79m BV=100 IBV=200u \r
-+ CJO=530p  M=0.333 N=1.88 TT=14.4n )\r
-\r
-*SRC=MBRM560;DI_MBRM560;Diodes;Si;  60.0V  5.00A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_MBRM560 D  ( IS=20.1u RS=8.40m BV=60.0 IBV=200u \r
-+ CJO=207p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=MBRM760;DI_MBRM760;Diodes;Si;  60.0V  7.00A  10.0ns   Diodes Inc Schottky\r.MODEL DI_MBRM760 D  ( IS=849n RS=9.63m BV=60.0 IBV=200u\r+ CJO=693p  M=0.333 N=1.07 TT=14.4n )\r
-\r
-*SRC=SBG1025L;DI_SBG1025L;Diodes;Si;  25.0V  10.0A  5.00ns   Diodes Inc.\r
-Schottky\r
-.MODEL DI_SBG1025L D  ( IS=2.36u RS=7.72m BV=25.0 IBV=1.00m\r
-+ CJO=636p  M=0.333 N=0.722 TT=7.20n )\r
-\r
-*SRC=SBG1030CT;DI_SBG1030CT;Diodes;Si;  30.0V  10.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBG1030CT D  ( IS=47.2u RS=6.69m BV=30.0 IBV=1.00m\r+ CJO=398p  M=0.333 N=1.41 TT=7.20n )\r
-\r
-*SRC=SBG1030L;DI_SBG1030L;Diodes;Si;  30.0V  10.0A  5.00ns   Diodes Inc.\r
-Schottky\r
-.MODEL DI_SBG1030L D  ( IS=2.36u RS=7.72m BV=30.0 IBV=1.00m\r
-+ CJO=636p  M=0.333 N=0.722 TT=7.20n )\r
-\r
-*SRC=SBG1035CT;DI_SBG1035CT;Diodes;Si;  35.0V  10.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBG1035CT D  ( IS=47.2u RS=6.69m BV=35.0 IBV=1.00m\r+ CJO=398p  M=0.333 N=1.41 TT=7.20n )\r
-\r
-*SRC=SBG1040CT;DI_SBG1040CT;Diodes;Si;  40.0V  10.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBG1040CT D  ( IS=47.2u RS=6.69m BV=40.0 IBV=1.00m\r+ CJO=398p  M=0.333 N=1.41 TT=7.20n )\r
-\r
-*SRC=SBG1045CT;DI_SBG1045CT;Diodes;Si;  45.0V  10.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBG1045CT D  ( IS=47.2u RS=6.69m BV=45.0 IBV=1.00m\r+ CJO=398p  M=0.333 N=1.41 TT=7.20n )\r
-\r
-*SRC=SBG1630CT;DI_SBG1630CT;Diodes;Si;  30.0V  16.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBG1630CT D  ( IS=47.2u RS=6.69m BV=30.0 IBV=1.00m\r+ CJO=464p  M=0.333 N=1.41 TT=7.20n )\r
-\r
-*SRC=SBG1635CT;DI_SBG1635CT;Diodes;Si;  35.0V  16.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBG1635CT D  ( IS=47.2u RS=6.69m BV=35.0 IBV=1.00m\r+ CJO=464p  M=0.333 N=1.41 TT=7.20n )\r
-\r
-*SRC=SBG1640CT;DI_SBG1640CT;Diodes;Si;  40.0V  16.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBG1640CT D  ( IS=47.2u RS=6.69m BV=40.0 IBV=1.00m\r+ CJO=464p  M=0.333 N=1.41 TT=7.20n )\r
-\r
-*SRC=SBG1645CT;DI_SBG1645CT;Diodes;Si;  45.0V  16.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBG1645CT D  ( IS=47.2u RS=6.69m BV=45.0 IBV=1.00m\r
-+ CJO=464p  M=0.333 N=1.41 TT=7.20n )\r
-\r
-*SRC=SBG2030CT;DI_SBG2030CT;Diodes;Si;  30.0V  20.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBG2030CT D  ( IS=7.84m RS=3.91m BV=30.0 IBV=1.00m\r
-+ CJO=1.72n  M=0.333 N=2.73 TT=7.20n )\r
-===============================================================================================\r
-\r
-*SRC=SBG2035CT;DI_SBG2035CT;Diodes;Si;  35.0V  20.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBG2035CT D  ( IS=7.84m RS=3.91m BV=35.0 IBV=1.00m\r
-+ CJO=1.72n  M=0.333 N=2.73 TT=7.20n )\r
-===============================================================================================\r
-\r
-*SRC=SBG2040CT;DI_SBG2040CT;Diodes;Si;  40.0V  20.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBG2040CT D  ( IS=7.84m RS=3.91m BV=40.0 IBV=1.00m\r
-+ CJO=1.72n  M=0.333 N=2.73 TT=7.20n )\r
-===============================================================================================\r
-\r
-*SRC=SBG2045CT;DI_SBG2045CT;Diodes;Si;  45.0V  20.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBG2045CT D  ( IS=7.84m RS=3.91m BV=45.0 IBV=1.00m\r
-+ CJO=1.72n  M=0.333 N=2.73 TT=7.20n )\r
-===============================================================================================\r
-\r
-*SRC=SBG3030CT;DI_SBG3030CT;Diodes;Si;  30.0V  30.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBG3030CT D  ( IS=31.1u RS=3.70m BV=30.0 IBV=1.00m\r
-+ CJO=796p  M=0.333 N=1.17 TT=7.20n )\r
-===============================================================================================\r
-\r
-*SRC=SBG3040CT;DI_SBG3040CT;Diodes;Si;  40.0V  30.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBG3040CT D  ( IS=31.1u RS=3.70m BV=40.0 IBV=1.00m\r
-+ CJO=796p  M=0.333 N=1.17 TT=7.20n )\r
-===============================================================================================\r
-\r
-*SRC=SBG3045CT;DI_SBG3045CT;Diodes;Si;  45.0V  30.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBG3045CT D  ( IS=31.1u RS=3.70m BV=45.0 IBV=1.00m\r
-+ CJO=796p  M=0.333 N=1.17 TT=7.20n )\r
-===============================================================================================\r
-\r
-*SRC=SBG3050CT;DI_SBG3050CT;Diodes;Si;  50.0V  30.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBG3050CT D  ( IS=319u RS=3.50m BV=50.0 IBV=1.00m\r
-+ CJO=796p  M=0.333 N=1.69 TT=7.20n )\r
-===============================================================================================\r
-\r
-*SRC=SBG3060CT;DI_SBG3060CT;Diodes;Si;  60.0V  30.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBG3060CT D  ( IS=319u RS=3.50m BV=60.0 IBV=1.00m\r
-+ CJO=796p  M=0.333 N=1.69 TT=7.20n )\r
-===============================================================================================\r
-\r
-*SRC=SBM1040;DI_SBM1040;Diodes;Si;  40.0V  10.0A  10.0ns   Diodes Inc Schottky Rectifier \r
-.MODEL DI_SBM1040 D  ( IS=63.8u RS=4.18m BV=40.0 IBV=300u \r
-+ CJO=2.39n  M=0.333 N=1.36 TT=14.4n )\r
-\r
-*SRC=SBM1040CT;DI_SBM1040CT;Diodes;Si;  40.0V  5.00A  3.00us   Diodes Inc. Schottky, dual, per node\r
-.MODEL DI_SBM1040CT D  ( IS=2.88u RS=8.40m BV=40.0 IBV=150u\r
-+ CJO=1.33n  M=0.333 N=1.03 TT=4.32u )\r
-\r
-*SRC=SBM340;DI_SBM340;Diodes;Si;  40.0V  3.00A  10.0ns   Diodes Inc. Schottky \r
-.MODEL DI_SBM340 D  ( IS=2.98n RS=19.4m BV=40.0 IBV=500u \r
-+ CJO=333p  M=0.333 N=0.700 TT=14.4n )\r
-\r
-*SRC=SBM540;DI_SBM540;Diodes;Si;  40.0V  5.00A  10.0ns   Diodes Inc. Schottky \r
-.MODEL DI_SBM540 D  ( IS=19.7u RS=8.40m BV=40.0 IBV=500u \r
-+ CJO=557p  M=0.333 N=1.28 TT=14.4n )\r
-\r
-*SRC=SK32;DI_SK32;Diodes;Si;  20.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_SK32 D  ( IS=50.5n RS=23.8m BV=20.0 IBV=500u\r
-+ CJO=555p  M=0.333 N=0.700 TT=7.20n )\r
-\r
-*SRC=SK33;DI_SK33;Diodes;Si;  30.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_SK33 D  ( IS=50.5n RS=23.8m BV=30.0 IBV=500u\r
-+ CJO=555p  M=0.333 N=0.700 TT=7.20n )\r
-\r
-*SRC=SK34;DI_SK34;Diodes;Si;  50.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_SK34 D  ( IS=50.5n RS=23.8m BV=50.0 IBV=500u\r
-+ CJO=555p  M=0.333 N=0.700 TT=7.20n )\r
-\r
-*SRC=SK35;DI_SK35;Diodes;Si;  50.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_SK35 D  ( IS=234u RS=24.0m BV=50.0 IBV=500u\r
-+ CJO=555p  M=0.333 N=1.90 TT=7.20n )\r
-\r
-*SRC=SK36;DI_SK36;Diodes;Si;  60.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_SK36 D  ( IS=234u RS=24.0m BV=60.0 IBV=500u\r
-+ CJO=555p  M=0.333 N=1.90 TT=7.20n )\r
-\r
-*SRC=1N4001;DI_1N4001;Diodes;Si;  50.0V  1.00A  3.00us   Diodes, Inc. diode\r
-.MODEL DI_1N4001 D  ( IS=76.9p RS=42.0m BV=50.0 IBV=5.00u\r
-+ CJO=39.8p  M=0.333 N=1.45 TT=4.32u )\r
-\r
-***************************************************************************************************************************************\r
-*SRC=1N4001G;DI_1N4001G;Diodes;Si;  50.0V  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier\r
-.MODEL DI_1N4001G D  ( IS=65.4p RS=42.2m BV=50.0 IBV=5.00u\r
-+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )\r
-***************************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-*SRC=1N4001GL;DI_1N4001GL;Diodes;Si;  50.0V  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier\r
-.MODEL DI_1N4001GL D  ( IS=65.4p RS=42.2m BV=50.0 IBV=5.00u\r
-+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )\r
-***************************************************************************************************************************************\r
-\r
-*SRC=1N4002;DI_1N4002;Diodes;Si;  100V  1.00A  3.00us   Diodes, Inc. diode\r
-.MODEL DI_1N4002 D  ( IS=76.9p RS=42.0m BV=100 IBV=5.00u\r
-+ CJO=39.8p  M=0.333 N=1.45 TT=4.32u )\r
-\r
-***************************************************************************************************************************************\r
-*SRC=1N4002G;DI_1N4002G;Diodes;Si;  100V  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier\r
-.MODEL DI_1N4002G D  ( IS=65.4p RS=42.2m BV=100 IBV=5.00u\r
-+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )\r
-***************************************************************************************************************************************\r
-\r
-***************************************************************************************************************************************\r
-*SRC=1N4002GL;DI_1N4002GL;Diodes;Si;  100V  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier\r
-.MODEL DI_1N4002GL D  ( IS=65.4p RS=42.2m BV=100 IBV=5.00u\r
-+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )\r
-***************************************************************************************************************************************\r
-\r
-*SRC=1N4003;DI_1N4003;Diodes;Si;  200V  1.00A  3.00us   Diodes, Inc. diode\r
-.MODEL DI_1N4003 D  ( IS=76.9p RS=42.0m BV=200 IBV=5.00u\r
-+ CJO=39.8p  M=0.333 N=1.45 TT=4.32u )\r
-\r
-***************************************************************************************************************************************\r
-*SRC=1N4003G;DI_1N4003G;Diodes;Si;  200V  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier\r
-.MODEL DI_1N4003G D  ( IS=65.4p RS=42.2m BV=200 IBV=5.00u\r
-+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )\r
-***************************************************************************************************************************************\r
-\r
-***************************************************************************************************************************************\r
-*SRC=1N4003GL;DI_1N4003GL;Diodes;Si;  200V  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier\r
-.MODEL DI_1N4003GL D  ( IS=65.4p RS=42.2m BV=200 IBV=5.00u\r
-+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )\r
-***************************************************************************************************************************************\r
-\r
-*SRC=1N4004;DI_1N4004;Diodes;Si;  400V  1.00A  3.00us   Diodes, Inc. diode\r
-.MODEL DI_1N4004 D  ( IS=76.9p RS=42.0m BV=400 IBV=5.00u\r
-+ CJO=39.8p  M=0.333 N=1.45 TT=4.32u )\r
-\r
-***************************************************************************************************************************************\r
-*SRC=1N4004G;DI_1N4004G;Diodes;Si;  400V  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier\r
-.MODEL DI_1N4004G D  ( IS=65.4p RS=42.2m BV=400 IBV=5.00u\r
-+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )\r
-***************************************************************************************************************************************\r
-\r
-***************************************************************************************************************************************\r
-*SRC=1N4004GL;DI_1N4004GL;Diodes;Si;  400V  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier\r
-.MODEL DI_1N4004GL D  ( IS=65.4p RS=42.2m BV=400 IBV=5.00u\r
-+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )\r
-***************************************************************************************************************************************\r
-\r
-*SRC=1N4005;DI_1N4005;Diodes;Si;  600V  1.00A  3.00us   Diodes, Inc. diode\r
-.MODEL DI_1N4005 D  ( IS=76.9p RS=42.0m BV=600 IBV=5.00u\r
-+ CJO=26.5p  M=0.333 N=1.45 TT=4.32u )\r
-\r
-***************************************************************************************************************************************\r
-*SRC=1N4005G;DI_1N4005G;Diodes;Si;  600V  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier\r
-.MODEL DI_1N4005G D  ( IS=65.4p RS=42.2m BV=600 IBV=5.00u\r
-+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )\r
-***************************************************************************************************************************************\r
-\r
-***************************************************************************************************************************************\r
-*SRC=1N4005GL;DI_1N4005GL;Diodes;Si;  600V  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier\r
-.MODEL DI_1N4005GL D  ( IS=65.4p RS=42.2m BV=600 IBV=5.00u\r
-+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )\r
-***************************************************************************************************************************************\r
-\r
-*SRC=1N4006;DI_1N4006;Diodes;Si;  800V  1.00A  3.00us   Diodes, Inc. diode\r
-.MODEL DI_1N4006 D  ( IS=76.9p RS=42.0m BV=800 IBV=5.00u\r
-+ CJO=26.5p  M=0.333 N=1.45 TT=4.32u )\r
-\r
-***************************************************************************************************************************************\r
-*SRC=1N4006G;DI_1N4006G;Diodes;Si;  800V  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier\r
-.MODEL DI_1N4006G D  ( IS=65.4p RS=42.2m BV=800 IBV=5.00u\r
-+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )\r
-***************************************************************************************************************************************\r
-\r
-***************************************************************************************************************************************\r
-*SRC=1N4006GL;DI_1N4006GL;Diodes;Si;  800V  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier\r
-.MODEL DI_1N4006GL D  ( IS=65.4p RS=42.2m BV=800 IBV=5.00u\r
-+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )\r
-***************************************************************************************************************************************\r
-\r
-*SRC=1N4007;DI_1N4007;Diodes;Si;  1.00kV  1.00A  3.00us   Diodes, Inc. diode\r
-.MODEL DI_1N4007 D  ( IS=76.9p RS=42.0m BV=1.00k IBV=5.00u\r
-+ CJO=26.5p  M=0.333 N=1.45 TT=4.32u )\r
-\r
-***************************************************************************************************************************************\r
-*SRC=1N4007G;DI_1N4007G;Diodes;Si;  1.00kV  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier\r
-.MODEL DI_1N4007G D  ( IS=65.4p RS=42.2m BV=1.00k IBV=5.00u\r
-+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )\r
-**************************************************************************************************************************************\r
-\r
-***************************************************************************************************************************************\r
-*SRC=1N4007GL;DI_1N4007GL;Diodes;Si;  1.00kV  1.00A  2.00us   Diodes Inc. Glass Passivated Rectifier\r
-.MODEL DI_1N4007GL D  ( IS=65.4p RS=42.2m BV=1.00k IBV=5.00u\r
-+ CJO=14.8p  M=0.333 N=1.36 TT=2.88u )\r
-**************************************************************************************************************************************\r
-\r
-*SRC=1N5400;DI_1N5400;Diodes;Si;  50.0V  3.00A  3.00us   Diodes Inc. Standard Rectifier \r
-.MODEL DI_1N5400 D  ( IS=63.0n RS=14.1m BV=50.0 IBV=10.0u \r
-+ CJO=125p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=1N5401;DI_1N5401;Diodes;Si;  100V  3.00A  3.00us   Diodes Inc. Standard Rectifier \r
-.MODEL DI_1N5401 D  ( IS=63.0n RS=14.1m BV=100 IBV=10.0u \r
-+ CJO=125p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=1N5402;DI_1N5402;Diodes;Si;  200V  3.00A  3.00us   Diodes Inc. Standard Rectifier \r
-.MODEL DI_1N5402 D  ( IS=63.0n RS=14.1m BV=200 IBV=10.0u \r
-+ CJO=125p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=1N5404;DI_1N5404;Diodes;Si;  400V  3.00A  3.00us   Diodes Inc. Standard Rectifier \r
-.MODEL DI_1N5404 D  ( IS=63.0n RS=14.1m BV=400 IBV=10.0u \r
-+ CJO=125p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=1N5406;DI_1N5406;Diodes;Si;  600V  3.00A  3.00us   Diodes Inc. Standard Rectifier \r
-.MODEL DI_1N5406 D  ( IS=63.0n RS=14.1m BV=600 IBV=10.0u \r
-+ CJO=53.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=1N5407;DI_1N5407;Diodes;Si;  800V  3.00A  3.00us   Diodes Inc. Standard Rectifier \r
-.MODEL DI_1N5407 D  ( IS=63.0n RS=14.1m BV=800 IBV=10.0u \r
-+ CJO=53.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=1N5408;DI_1N5408;Diodes;Si;  1.00kV  3.00A  3.00us   Diodes Inc. Standard Rectifier \r
-.MODEL DI_1N5408 D  ( IS=63.0n RS=14.1m BV=1.00k IBV=10.0u \r
-+ CJO=53.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=6A05;DI_6A05;Diodes;Si;  50.0V  6.00A  2.00us   Diodes Inc. \r
-.MODEL DI_6A05 D  ( IS=52.4n RS=7.00m BV=50.0 IBV=10.0u\r
-+ CJO=60.0p  M=0.333 N=1.70 TT=2.88u )\r
-\r
-*SRC=6A1;DI_6A1;Diodes;Si;  100V  6.00A  2.00us   Diodes Inc. \r
-.MODEL DI_6A1 D  ( IS=52.4n RS=7.00m BV=100 IBV=10.0u\r
-+ CJO=60.0p  M=0.333 N=1.70 TT=2.88u )\r
-\r
-*SRC=6A10;DI_6A10;Diodes;Si;  1.00kV  6.00A  2.00us   Diodes Inc. \r
-.MODEL DI_6A10 D  ( IS=52.4n RS=7.00m BV=1.00k IBV=10.0u\r
-+ CJO=60.0p  M=0.333 N=1.70 TT=2.88u )\r
-\r
-*SRC=6A2;DI_6A2;Diodes;Si;  200V  6.00A  2.00us   Diodes Inc. \r
-.MODEL DI_6A2 D  ( IS=52.4n RS=7.00m BV=200 IBV=10.0u\r
-+ CJO=60.0p  M=0.333 N=1.70 TT=2.88u )\r
-\r
-*SRC=6A4;DI_6A4;Diodes;Si;  400V  6.00A  2.00us   Diodes Inc. \r
-.MODEL DI_6A4 D  ( IS=52.4n RS=7.00m BV=400 IBV=10.0u\r
-+ CJO=60.0p  M=0.333 N=1.70 TT=2.88u )\r
-\r
-*SRC=6A6;DI_6A6;Diodes;Si;  600V  6.00A  2.00us   Diodes Inc. \r
-.MODEL DI_6A6 D  ( IS=52.4n RS=7.00m BV=600 IBV=10.0u\r
-+ CJO=60.0p  M=0.333 N=1.70 TT=2.88u )\r
-\r
-*SRC=6A8;DI_6A8;Diodes;Si;  800V  6.00A  2.00us   Diodes Inc. \r
-.MODEL DI_6A8 D  ( IS=52.4n RS=7.00m BV=800 IBV=10.0u\r
-+ CJO=60.0p  M=0.333 N=1.70 TT=2.88u )\r
-\r
-*SRC=S1A;DI_S1A;Diodes;Si;  50.0V  1.00A  3.00us   Diodes Inc. Rectifier\r
-.MODEL DI_S1A D  ( IS=7.31e-018 RS=42.0m BV=50.0 IBV=5.00u\r
-+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )\r
-\r
-*SRC=S1AB;DI_S1AB;Diodes;Si;  50.0V  1.00A  3.00us   Diodes Inc. Rectifier\r
-.MODEL DI_S1AB D  ( IS=7.31e-018 RS=42.0m BV=50.0 IBV=5.00u\r
-+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )\r
-\r
-*SRC=S1B;DI_S1B;Diodes;Si;  100V  1.00A  3.00us   Diodes Inc. Rectifier\r
-.MODEL DI_S1B D  ( IS=7.31e-018 RS=42.0m BV=100 IBV=5.00u\r
-+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )\r
-\r
-*SRC=S1BB;DI_S1BB;Diodes;Si;  100V  1.00A  3.00us   Diodes Inc. Rectifier\r
-.MODEL DI_S1BB D  ( IS=7.31e-018 RS=42.0m BV=100 IBV=5.00u\r
-+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )\r
-\r
-*SRC=S1D;DI_S1D;Diodes;Si;  200V  1.00A  3.00us   Diodes Inc. Rectifier\r
-.MODEL DI_S1D D  ( IS=7.31e-018 RS=42.0m BV=200 IBV=5.00u\r
-+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )\r
-\r
-*SRC=S1DB;DI_S1DB;Diodes;Si;  200V  1.00A  3.00us   Diodes Inc. Rectifier\r
-.MODEL DI_S1DB D  ( IS=7.31e-018 RS=42.0m BV=200 IBV=5.00u\r
-+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )\r
-\r
-*SRC=S1G;DI_S1G;Diodes;Si;  400V  1.00A  3.00us   Diodes Inc. Rectifier\r
-.MODEL DI_S1G D  ( IS=7.31e-018 RS=42.0m BV=400 IBV=5.00u\r
-+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )\r
-\r
-*SRC=S1GB;DI_S1GB;Diodes;Si;  400V  1.00A  3.00us   Diodes Inc. Rectifier\r
-.MODEL DI_S1GB D  ( IS=7.31e-018 RS=42.0m BV=400 IBV=5.00u\r
-+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )\r
-\r
-*SRC=S1J;DI_S1J;Diodes;Si;  600V  1.00A  3.00us   Diodes Inc. Rectifier\r
-.MODEL DI_S1J D  ( IS=7.31e-018 RS=42.0m BV=600 IBV=5.00u\r
-+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )\r
-\r
-*SRC=S1JB;DI_S1JB;Diodes;Si;  600V  1.00A  3.00us   Diodes Inc. Rectifier\r
-.MODEL DI_S1JB D  ( IS=7.31e-018 RS=42.0m BV=600 IBV=5.00u\r
-+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )\r
-\r
-*SRC=S1K;DI_S1K;Diodes;Si;  800V  1.00A  3.00us   Diodes Inc. Rectifier\r
-.MODEL DI_S1K D  ( IS=7.31e-018 RS=42.0m BV=800 IBV=5.00u\r
-+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )\r
-\r
-*SRC=S1KB;DI_S1KB;Diodes;Si;  800V  1.00A  3.00us   Diodes Inc. Rectifier\r
-.MODEL DI_S1KB D  ( IS=7.31e-018 RS=42.0m BV=800 IBV=5.00u\r
-+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )\r
-\r
-*SRC=S1M;DI_S1M;Diodes;Si;  1.00kV  1.00A  3.00us   Diodes Inc. Rectifier\r
-.MODEL DI_S1M D  ( IS=7.31e-018 RS=42.0m BV=1.00k IBV=5.00u\r
-+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )\r
-\r
-*SRC=S1MB;DI_S1MB;Diodes;Si;  1.00kV  1.00A  3.00us   Diodes Inc. Rectifier\r
-.MODEL DI_S1MB D  ( IS=7.31e-018 RS=42.0m BV=1.00k IBV=5.00u\r
-+ CJO=42.4p  M=0.333 N=0.775 TT=4.32u )\r
-\r
-*SRC=S2A;DI_S2A;Diodes;Si;  50.0V  1.50A  3.00us   Diodes Inc. \r
-.MODEL DI_S2A D  ( IS=1.30u RS=8.92m BV=50.0 IBV=5.00u\r
-+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )\r
-\r
-*SRC=S2AA;DI_S2AA;Diodes;Si;  50.0V  1.50A  3.00us   Diodes Inc. \r
-.MODEL DI_S2AA D  ( IS=1.30u RS=8.92m BV=50.0 IBV=5.00u\r
-+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )\r
-\r
-*SRC=S2B;DI_S2B;Diodes;Si;  100V  1.50A  3.00us   Diodes Inc. \r
-.MODEL DI_S2B D  ( IS=1.30u RS=8.92m BV=100 IBV=5.00u\r
-+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )\r
-\r
-*SRC=S2BA;DI_S2BA;Diodes;Si;  100V  1.50A  3.00us   Diodes Inc. \r
-.MODEL DI_S2BA D  ( IS=1.30u RS=8.92m BV=100 IBV=5.00u\r
-+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )\r
-\r
-*SRC=S2D;DI_S2D;Diodes;Si;  200V  1.50A  3.00us   Diodes Inc. \r
-.MODEL DI_S2D D  ( IS=1.30u RS=8.92m BV=200 IBV=5.00u\r
-+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )\r
-\r
-*SRC=S2DA;DI_S2DA;Diodes;Si;  200V  1.50A  3.00us   Diodes Inc. \r
-.MODEL DI_S2DA D  ( IS=1.30u RS=8.92m BV=200 IBV=5.00u\r
-+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )\r
-\r
-*SRC=S2G;DI_S2G;Diodes;Si;  400V  1.50A  3.00us   Diodes Inc. \r
-.MODEL DI_S2G D  ( IS=1.30u RS=8.92m BV=400 IBV=5.00u\r
-+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )\r
-\r
-*SRC=S2GA;DI_S2GA;Diodes;Si;  400V  1.50A  3.00us   Diodes Inc. \r
-.MODEL DI_S2GA D  ( IS=1.30u RS=8.92m BV=400 IBV=5.00u\r
-+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )\r
-\r
-*SRC=S2J;DI_S2J;Diodes;Si;  600V  1.50A  3.00us   Diodes Inc. \r
-.MODEL DI_S2J D  ( IS=1.30u RS=8.92m BV=600 IBV=5.00u\r
-+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )\r
-\r
-*SRC=S2JA;DI_S2JA;Diodes;Si;  600V  1.50A  3.00us   Diodes Inc. \r
-.MODEL DI_S2JA D  ( IS=1.30u RS=8.92m BV=600 IBV=5.00u\r
-+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )\r
-\r
-*SRC=S2K;DI_S2K;Diodes;Si;  800V  1.50A  3.00us   Diodes Inc. \r
-.MODEL DI_S2K D  ( IS=1.30u RS=8.92m BV=800 IBV=5.00u\r
-+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )\r
-\r
-*SRC=S2KA;DI_S2KA;Diodes;Si;  800V  1.50A  3.00us   Diodes Inc. \r
-.MODEL DI_S2KA D  ( IS=1.30u RS=8.92m BV=800 IBV=5.00u\r
-+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )\r
-\r
-*SRC=S2M;DI_S2M;Diodes;Si;  1.00kV  1.50A  3.00us   Diodes Inc. \r
-.MODEL DI_S2M D  ( IS=1.30u RS=8.92m BV=1.00k IBV=5.00u\r
-+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )\r
-\r
-*SRC=S2MA;DI_S2MA;Diodes;Si;  1.00kV  1.50A  3.00us   Diodes Inc. \r
-.MODEL DI_S2MA D  ( IS=1.30u RS=8.92m BV=1.00k IBV=5.00u\r
-+ CJO=37.0p  M=0.333 N=2.58 TT=4.32u )\r
-\r
-*SRC=S3A;DI_S3A;Diodes;Si;  50.0V  3.00A  3.00us   Diodes Inc. -\r
-.MODEL DI_S3A D  ( IS=1.37n RS=14.0m BV=50.0 IBV=10.0u\r
-+ CJO=74.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=S3A;DI_S3A;Diodes;Si;  50.0V  3.00A  3.00us   Diodes Inc. -\r
-.MODEL DI_S3A D  ( IS=1.37n RS=14.0m BV=50.0 IBV=10.0u\r
-+ CJO=74.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=S3BB;S3BB;Diodes;Si;  100V  3.00A  3.00us   Diodes Inc. -\r
-.MODEL S3BB D  ( IS=1.37n RS=14.0m BV=100 IBV=10.0u\r
-+ CJO=74.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=S3BB;S3BB;Diodes;Si;  100V  3.00A  3.00us   Diodes Inc. -\r
-.MODEL S3BB D  ( IS=1.37n RS=14.0m BV=100 IBV=10.0u\r
-+ CJO=74.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=S3D;DI_S3D;Diodes;Si;  200V  3.00A  3.00us   Diodes Inc. -\r
-.MODEL DI_S3D D  ( IS=1.37n RS=14.0m BV=200 IBV=10.0u\r
-+ CJO=74.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=S3DB;DI_S3DB;Diodes;Si;  200V  3.00A  3.00us   Diodes Inc. -\r
-.MODEL DI_S3DB D  ( IS=1.37n RS=14.0m BV=200 IBV=10.0u\r
-+ CJO=74.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=S3GB;DI_S3GB;Diodes;Si;  400V  3.00A  3.00us   Diodes Inc. -\r
-.MODEL DI_S3GB D  ( IS=1.37n RS=14.0m BV=400 IBV=10.0u\r
-+ CJO=74.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=S3GB;DI_S3GB;Diodes;Si;  400V  3.00A  3.00us   Diodes Inc. -\r
-.MODEL DI_S3GB D  ( IS=1.37n RS=14.0m BV=400 IBV=10.0u\r
-+ CJO=74.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=S3K;DI_S3K;Diodes;Si;  800V  3.00A  3.00us   Diodes Inc. -\r
-.MODEL DI_S3K D  ( IS=1.37n RS=14.0m BV=800 IBV=10.0u\r
-+ CJO=74.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=S3K;DI_S3K;Diodes;Si;  800V  3.00A  3.00us   Diodes Inc. -\r
-.MODEL DI_S3K D  ( IS=1.37n RS=14.0m BV=800 IBV=10.0u\r
-+ CJO=74.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=S3M;DI_S3M;Diodes;Si;  1.00kV  3.00A  3.00us   Diodes Inc. -\r
-.MODEL DI_S3M D  ( IS=1.37n RS=14.0m BV=1.00k IBV=10.0u\r
-+ CJO=74.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=S3M;DI_S3M;Diodes;Si;  1.00kV  3.00A  3.00us   Diodes Inc. -\r
-.MODEL DI_S3M D  ( IS=1.37n RS=14.0m BV=1.00k IBV=10.0u\r
-+ CJO=74.0p  M=0.333 N=1.70 TT=4.32u )\r
-\r
-*SRC=S5AC;DI_S5AC;Diodes;Si;  50.0V  5.00A  2.00us   Diodes Inc. -\r
-.MODEL DI_S5AC D  ( IS=2.28n RS=8.40m BV=50.0 IBV=10.0u\r
-+ CJO=74.0p  M=0.333 N=1.70 TT=2.88u )\r
-\r
-*SRC=S5BC;DI_S5BC;Diodes;Si;  100V  5.00A  2.00us   Diodes Inc. -\r
-.MODEL DI_S5BC D  ( IS=2.28n RS=8.40m BV=100 IBV=10.0u\r
-+ CJO=74.0p  M=0.333 N=1.70 TT=2.88u )\r
-\r
-*SRC=S5DC;DI_S5DC;Diodes;Si;  200V  5.00A  2.00us   Diodes Inc. -\r
-.MODEL DI_S5DC D  ( IS=2.28n RS=8.40m BV=200 IBV=10.0u\r
-+ CJO=74.0p  M=0.333 N=1.70 TT=2.88u )\r
-\r
-*SRC=S5GC;DI_S5GC;Diodes;Si;  400V  5.00A  2.00us   Diodes Inc. \r
-.MODEL DI_S5GC D  ( IS=2.28n RS=8.40m BV=400 IBV=10.0u\r
-+ CJO=74.0p  M=0.333 N=1.70 TT=2.88u )\r
-\r
-*SRC=S5JC;DI_S5JC;Diodes;Si;  600V  5.00A  2.00us   Diodes Inc. -\r
-.MODEL DI_S5JC D  ( IS=2.28n RS=8.40m BV=600 IBV=10.0u\r
-+ CJO=74.0p  M=0.333 N=1.70 TT=2.88u )\r
-\r
-*SRC=S5KC;DI_S5KC;Diodes;Si;  800V  5.00A  2.00us   Diodes Inc. -\r
-.MODEL DI_S5KC D  ( IS=2.28n RS=8.40m BV=800 IBV=10.0u\r
-+ CJO=74.0p  M=0.333 N=1.70 TT=2.88u )\r
-\r
-*SRC=S5MC;DI_S5MC;Diodes;Si;  1.00kV  5.00A  2.00us   Diodes Inc. -\r
-.MODEL DI_S5MC D  ( IS=2.28n RS=8.40m BV=1.00k IBV=10.0u\r
-+ CJO=74.0p  M=0.333 N=1.70 TT=2.88u )\r
-\r
-*SRC=1N4933;DI_1N4933;Diodes;Si;  50.0V  1.00A  200ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_1N4933 D  ( IS=830n RS=34.0m BV=50.0 IBV=5.00u\r
-+ CJO=26.5p  M=0.333 N=2.46 TT=288n )\r
-\r
-*SRC=1N4934;DI_1N4934;Diodes;Si;  100V  1.00A  200ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_1N4934 D  ( IS=830n RS=34.0m BV=100 IBV=5.00u\r
-+ CJO=26.5p  M=0.333 N=2.46 TT=288n )\r
-\r
-*SRC=1N4935;DI_1N4935;Diodes;Si;  200V  1.00A  200ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_1N4935 D  ( IS=830n RS=34.0m BV=200 IBV=5.00u\r
-+ CJO=26.5p  M=0.333 N=2.46 TT=288n )\r
-\r
-*SRC=1N4936;DI_1N4936;Diodes;Si;  400V  1.00A  200ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_1N4936 D  ( IS=830n RS=34.0m BV=400 IBV=5.00u\r
-+ CJO=26.5p  M=0.333 N=2.46 TT=288n )\r
-\r
-*SRC=1N4937;DI_1N4937;Diodes;Si;  600V  1.00A  200ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_1N4937 D  ( IS=830n RS=34.0m BV=600 IBV=5.00u\r
-+ CJO=26.5p  M=0.333 N=2.46 TT=288n )\r
-\r
-*SRC=DL4933;DI_DL4933;Diodes;Si;  50.0V  1.00A  200ns   Diodes Inc. Fast Recovery Rectifier \r
-.MODEL DI_DL4933 D  ( IS=4.25n RS=25.0m BV=50.0 IBV=100u \r
-+ CJO=26.5p  M=0.333 N=1.70 TT=288n )\r
-\r
-*SRC=DL4934;DI_DL4934;Diodes;Si;  100V  1.00A  200ns   Diodes Inc. Fast Recovery Rectifier \r
-.MODEL DI_DL4934 D  ( IS=4.25n RS=25.0m BV=100 IBV=100u \r
-+ CJO=26.5p  M=0.333 N=1.70 TT=288n )\r
-\r
-*SRC=DL4935;DI_DL4935;Diodes;Si;  200V  1.00A  200ns   Diodes Inc. Fast Recovery Rectifier \r
-.MODEL DI_DL4935 D  ( IS=4.25n RS=25.0m BV=200 IBV=100u \r
-+ CJO=26.5p  M=0.333 N=1.70 TT=288n )\r
-\r
-*SRC=DL4936;DI_DL4936;Diodes;Si;  400V  1.00A  200ns   Diodes Inc. Fast Recovery Rectifier \r
-.MODEL DI_DL4936 D  ( IS=4.25n RS=25.0m BV=400 IBV=100u \r
-+ CJO=26.5p  M=0.333 N=1.70 TT=288n )\r
-\r
-*SRC=DL4937;DI_DL4937;Diodes;Si;  600V  1.00A  200ns   Diodes Inc. Fast Recovery Rectifier \r
-.MODEL DI_DL4937 D  ( IS=4.25n RS=25.0m BV=600 IBV=100u \r
-+ CJO=26.5p  M=0.333 N=1.70 TT=288n )\r
-\r
-*SRC=ES1A;DI_ES1A;Diodes;Si;  50.0V  1.00A  20.0ns   Diodes Inc. \r
-.MODEL DI_ES1A D  ( IS=123n RS=42.0m BV=50.0 IBV=5.00u\r
-+ CJO=18.5p  M=0.333 N=2.12 TT=28.8n )\r
-\r
-*SRC=ES1B;DI_ES1B;Diodes;Si;  100V  1.00A  20.0ns   Diodes Inc. \r
-.MODEL DI_ES1B D  ( IS=123n RS=42.0m BV=100 IBV=5.00u\r
-+ CJO=18.5p  M=0.333 N=2.12 TT=28.8n )\r
-\r
-*SRC=ES1C;DI_ES1C;Diodes;Si;  150V  1.00A  20.0ns   Diodes Inc. \r
-.MODEL DI_ES1C D  ( IS=123n RS=42.0m BV=150 IBV=5.00u\r
-+ CJO=18.5p  M=0.333 N=2.12 TT=28.8n )\r
-\r
-*SRC=ES1D;DI_ES1D;Diodes;Si;  200V  1.00A  20.0ns   Diodes Inc. \r
-.MODEL DI_ES1D D  ( IS=123n RS=42.0m BV=200 IBV=5.00u\r
-+ CJO=18.5p  M=0.333 N=2.12 TT=28.8n )\r
-\r
-*SRC=ES1G;DI_ES1G;Diodes;Si;  400V  1.00A  20.0ns   Diodes Inc. \r
-.MODEL DI_ES1G D  ( IS=373n RS=64.3m BV=400 IBV=5.00u\r
-+ CJO=18.5p  M=0.333 N=2.84 TT=28.8n )\r
-\r
-*SRC=ES2A;DI_ES2A;Diodes;Si;  50.0V  2.00A  25.0ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_ES2A D  ( IS=267n RS=21.0m BV=50.0 IBV=5.00u\r
-+ CJO=83.5p  M=0.333 N=1.70 TT=36.0n )\r
-\r
-*****************************************************************************************\r
-*SRC=ES2AA;DI_ES2AA;Diodes;Si;  50.0V  2.00A  25.0ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_ES2AA D  ( IS=267n RS=21.0m BV=50.0 IBV=5.00u\r
-+ CJO=83.5p  M=0.333 N=1.70 TT=36.0n )\r
-****************************************************************************************\r
-\r
-*SRC=ES2B;DI_ES2B;Diodes;Si;  100V  2.00A  25.0ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_ES2B D  ( IS=267n RS=21.0m BV=100 IBV=5.00u\r
-+ CJO=83.5p  M=0.333 N=1.70 TT=36.0n )\r
-\r
-****************************************************************************************\r
-SRC=ES2BA;DI_ES2BA;Diodes;Si;  100V  2.00A  25.0ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_ES2BA D  ( IS=267n RS=21.0m BV=100 IBV=5.00u\r
-+ CJO=83.5p  M=0.333 N=1.70 TT=36.0n )\r
-***************************************************************************************\r
-\r
-*SRC=ES2C;DI_ES2C;Diodes;Si;  150V  2.00A  25.0ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_ES2C D  ( IS=267n RS=21.0m BV=150 IBV=5.00u\r
-+ CJO=83.5p  M=0.333 N=1.70 TT=36.0n )\r
-\r
-***************************************************************************************\r
-*SRC=ES2CA;DI_ES2CA;Diodes;Si;  150V  2.00A  25.0ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_ES2CA D  ( IS=267n RS=21.0m BV=150 IBV=5.00u\r
-+ CJO=83.5p  M=0.333 N=1.70 TT=36.0n )\r
-*****************************************************************************************\r
-\r
-*SRC=ES2D;DI_ES2D;Diodes;Si;  200V  2.00A  25.0ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_ES2D D  ( IS=267n RS=21.0m BV=200 IBV=5.00u\r
-+ CJO=83.5p  M=0.333 N=1.70 TT=36.0n )\r
-\r
-*****************************************************************************************\r
-*SRC=ES2DA;DI_ES2DA;Diodes;Si;  200V  2.00A  25.0ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_ES2DA D  ( IS=267n RS=21.0m BV=200 IBV=5.00u\r
-+ CJO=83.5p  M=0.333 N=1.70 TT=36.0n )\r
-*****************************************************************************************\r
-\r
-*SRC=ES2G;DI_ES2G;Diodes;Si;  400V  2.00A  25.0ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_ES2G D  ( IS=3.92n RS=21.0m BV=400 IBV=5.00u\r
-+ CJO=83.5p  M=0.333 N=1.95 TT=36.0n )\r
-\r
-*SRC=ES3A;DI_ES3A;Diodes;Si;  50.0V  3.00A  25.0ns   Diodes Inc. \r
-.MODEL DI_ES3A D  ( IS=7.27p RS=22.4m BV=50.0 IBV=10.0u\r
-+ CJO=83.2p  M=0.333 N=0.700 TT=36.0n )\r
-\r
-*SRC=ES3AB;DI_ES3AB;Diodes;Si;  50.0V  3.00A  25.0ns   Diodes Inc. \r
-.MODEL DI_ES3AB D  ( IS=7.27p RS=22.4m BV=50.0 IBV=10.0u\r
-+ CJO=83.2p  M=0.333 N=0.700 TT=36.0n )\r
-\r
-*SRC=ES3B;DI_ES3B;Diodes;Si;  100V  3.00A  25.0ns   Diodes Inc. \r
-.MODEL DI_ES3B D  ( IS=7.27p RS=22.4m BV=100 IBV=10.0u\r
-+ CJO=83.2p  M=0.333 N=0.700 TT=36.0n )\r
-\r
-*SRC=ES3BB;DI_ES3BB;Diodes;Si;  100V  3.00A  25.0ns   Diodes Inc. \r
-.MODEL DI_ES3BB D  ( IS=7.27p RS=22.4m BV=100 IBV=10.0u\r
-+ CJO=83.2p  M=0.333 N=0.700 TT=36.0n )\r
-\r
-*SRC=ES3C;DI_ES3C;Diodes;Si;  150V  3.00A  25.0ns   Diodes Inc. \r
-.MODEL DI_ES3C D  ( IS=7.27p RS=22.4m BV=150 IBV=10.0u\r
-+ CJO=83.2p  M=0.333 N=0.700 TT=36.0n )\r
-\r
-*SRC=ES3CB;DI_ES3CB;Diodes;Si;  150V  3.00A  25.0ns   Diodes Inc. \r
-.MODEL DI_ES3CB D  ( IS=7.27p RS=22.4m BV=150 IBV=10.0u\r
-+ CJO=83.2p  M=0.333 N=0.700 TT=36.0n )\r
-\r
-*SRC=ES3D;DI_ES3D;Diodes;Si;  200V  3.00A  25.0ns   Diodes Inc. \r
-.MODEL DI_ES3D D  ( IS=7.27p RS=22.4m BV=200 IBV=10.0u\r
-+ CJO=83.2p  M=0.333 N=0.700 TT=36.0n )\r
-\r
-*SRC=ES3DB;DI_ES3DB;Diodes;Si;  200V  3.00A  25.0ns   Diodes Inc. \r
-.MODEL DI_ES3DB D  ( IS=7.27p RS=22.4m BV=200 IBV=10.0u\r
-+ CJO=83.2p  M=0.333 N=0.700 TT=36.0n )\r
-\r
-*SRC=MURB1610CT;DI_MURB1610CT;Diodes;Si;  100V  16.0A  25.0ns   Diodes Inc.\r
-Fast Rectifier -- for one element\r
-.MODEL DI_MURB1610CT D  ( IS=3.19n RS=3.67m BV=100 IBV=5.00u\r
-+ CJO=225p  M=0.333 N=1.59 TT=36.0n )\r
-\r
-*SRC=MURB1620CT;DI_MURB1620CT;Diodes;Si;  200V  16.0A  25.0ns   Diodes Inc.\r
-Fast Rectifier -- for one element\r
-.MODEL DI_MURB1620CT D  ( IS=3.19n RS=3.67m BV=200 IBV=5.00u\r
-+ CJO=225p  M=0.333 N=1.59 TT=36.0n )\r
-\r
-*SRC=MURS120;DI_MURS120;Diodes;Si;  200V  1.00A  25.0ns   Diodes Inc. Super Fast Rectifier\r
-.MODEL DI_MURS120 D  ( IS=17.1n RS=20.6m BV=200 IBV=2.00u\r
-+ CJO=60.0p  M=0.333 N=1.73 TT=36.0n )\r
-************************************************************************************************************************************\r
-\r
-*SRC=MURS140;DI_MURS140;Diodes;Si;  400V  1.00A  50.0ns   Diodes Inc. Super Fast Rectifier\r
-.MODEL DI_MURS140 D  ( IS=17.1n RS=20.6m BV=400 IBV=2.00u\r
-+ CJO=45.0p  M=0.333 N=1.73 TT=72.0n )\r
-***********************************************************************************************************************************\r
-\r
-*SRC=MURS160;DI_MURS160;Diodes;Si;  600V  1.00A  50.0ns   Diodes Inc. Super Fast Rectifier\r
-.MODEL DI_MURS160 D  ( IS=17.1n RS=20.6m BV=600 IBV=2.00u\r
-+ CJO=45.0p  M=0.333 N=1.73 TT=72.0n )\r
-***********************************************************************************************************************************\r
-\r
-*SRC=MURS320;DI_MURS320;Diodes;Si;  200V  3.00A  25.0ns   Diodes Inc. Super Fast Rectifier\r
-.MODEL DI_MURS320 D  ( IS=11.8n RS=7.89m BV=200 IBV=5.00u\r
-+ CJO=45.0p  M=0.333 N=1.56 TT=36.0n )\r
-***********************************************************************************************************************************\r
-\r
-*SRC=PR1001G;DI_PR1001G;Diodes;Si;  50.0V  1.00A  150ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_PR1001G D  ( IS=5.00n RS=29.8m BV=50.0 IBV=5.00u\r
-+ CJO=27.8p  M=0.333 N=1.72 TT=216n )\r
-\r
-*SRC=PR1002G;DI_PR1002G;Diodes;Si;  100V  1.00A  150ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_PR1002G D  ( IS=5.00n RS=29.8m BV=100 IBV=5.00u\r
-+ CJO=27.8p  M=0.333 N=1.72 TT=216n )\r
-\r
-*SRC=PR1003G;DI_PR1003G;Diodes;Si;  200V  1.00A  150ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_PR1003G D  ( IS=5.00n RS=29.8m BV=200 IBV=5.00u\r
-+ CJO=27.8p  M=0.333 N=1.72 TT=216n )\r
-\r
-*SRC=PR1004G;DI_PR1004G;Diodes;Si;  400V  1.00A  150ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_PR1004G D  ( IS=5.00n RS=29.8m BV=400 IBV=5.00u\r
-+ CJO=27.8p  M=0.333 N=1.72 TT=216n )\r
-\r
-*SRC=PR1005G;DI_PR1005G;Diodes;Si;  600V  1.00A  250ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_PR1005G D  ( IS=5.00n RS=29.8m BV=600 IBV=5.00u\r
-+ CJO=19.9p  M=0.333 N=1.72 TT=360n )\r
-\r
-*SRC=PR1006G;DI_PR1006G;Diodes;Si;  800V  1.00A  500ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_PR1006G D  ( IS=5.00n RS=29.8m BV=800 IBV=5.00u\r
-+ CJO=19.9p  M=0.333 N=1.72 TT=720n )\r
-\r
-*SRC=PR1007G;DI_PR1007G;Diodes;Si;  1.00kV  1.00A  500ns   Diodes Inc. Fast\r
-Rectifier\r
-.MODEL DI_PR1007G D  ( IS=5.00n RS=29.8m BV=1.00k IBV=5.00u\r
-+ CJO=19.9p  M=0.333 N=1.72 TT=720n )\r
-\r
-*SRC=PR6001;DI_PR6001;Diodes;Si;  50.0V  6.00A  150ns   Diodes Inc. Fast Rectifier \r
-.MODEL DI_PR6001 D  ( IS=863n RS=12.6m BV=50.0 IBV=10.0u \r
-+ CJO=663p  M=0.333 N=1.70 TT=216n )\r
-\r
-*SRC=RS1A;DI_RS1A;Diodes;Si;  50.0V  1.00A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS1A D  ( IS=948n RS=81.3m BV=50.0 IBV=5.00u\r
-+ CJO=27.7p  M=0.333 N=2.48 TT=216n )\r
-*************************************************************************************************************************************\r
-\r
-*SRC=RS1AB;DI_RS1AB;Diodes;Si;  50.0V  1.00A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS1AB D  ( IS=948n RS=81.3m BV=50.0 IBV=5.00u\r
-+ CJO=27.7p  M=0.333 N=2.48 TT=216n )\r
-*************************************************************************************************************************************\r
-\r
-*SRC=RS1B;DI_RS1B;Diodes;Si;  100V  1.00A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS1B D  ( IS=948n RS=81.3m BV=100 IBV=5.00u\r
-+ CJO=27.7p  M=0.333 N=2.48 TT=216n )\r
-**************************************************************************************************************************************\r
-\r
-*SRC=RS1BB;DI_RS1BB;Diodes;Si;  100V  1.00A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS1BB D  ( IS=948n RS=81.3m BV=100 IBV=5.00u\r
-+ CJO=27.7p  M=0.333 N=2.48 TT=216n )\r
-**************************************************************************************************************************************\r
-\r
-*SRC=RS1D;DI_RS1D;Diodes;Si;  200V  1.00A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS1D D  ( IS=948n RS=81.3m BV=200 IBV=5.00u\r
-+ CJO=27.7p  M=0.333 N=2.48 TT=216n )\r
-**************************************************************************************************************************************\r
-\r
-*SRC=RS1DB;DI_RS1DB;Diodes;Si;  200V  1.00A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS1DB D  ( IS=948n RS=81.3m BV=200 IBV=5.00u\r
-+ CJO=27.7p  M=0.333 N=2.48 TT=216n )\r
-**************************************************************************************************************************************\r
-\r
-*SRC=RS1G;DI_RS1G;Diodes;Si;  400V  1.00A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS1G D  ( IS=948n RS=81.3m BV=400 IBV=5.00u\r
-+ CJO=27.7p  M=0.333 N=2.48 TT=216n )\r
-**************************************************************************************************************************************\r
-\r
-*SRC=RS1GB;DI_RS1GB;Diodes;Si;  400V  1.00A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS1GB D  ( IS=948n RS=81.3m BV=400 IBV=5.00u\r
-+ CJO=27.7p  M=0.333 N=2.48 TT=216n )\r
-**************************************************************************************************************************************\r
-\r
-*SRC=RS1J;DI_RS1J;Diodes;Si;  600V  1.00A  250ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS1J D  ( IS=948n RS=81.3m BV=600 IBV=5.00u\r
-+ CJO=27.7p  M=0.333 N=2.48 TT=360n )\r
-**************************************************************************************************************************************\r
-\r
-*SRC=RS1JB;DI_RS1JB;Diodes;Si;  600V  1.00A  250ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS1JB D  ( IS=948n RS=81.3m BV=600 IBV=5.00u\r
-+ CJO=27.7p  M=0.333 N=2.48 TT=360n )\r
-**************************************************************************************************************************************\r
-\r
-*SRC=RS1K;DI_RS1K;Diodes;Si;  800V  1.00A  500ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS1K D  ( IS=948n RS=81.3m BV=800 IBV=5.00u\r
-+ CJO=27.7p  M=0.333 N=2.48 TT=720n )\r
-**************************************************************************************************************************************\r
-\r
-*SRC=RS1KB;DI_RS1KB;Diodes;Si;  800V  1.00A  500ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS1KB D  ( IS=948n RS=81.3m BV=800 IBV=5.00u\r
-+ CJO=27.7p  M=0.333 N=2.48 TT=720n )\r
-**************************************************************************************************************************************\r
-\r
-*SRC=RS1M;DI_RS1M;Diodes;Si;  1.00kV  1.00A  500ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS1M D  ( IS=948n RS=81.3m BV=1.00k IBV=5.00u\r
-+ CJO=27.7p  M=0.333 N=2.48 TT=720n )\r
-**************************************************************************************************************************************\r
-\r
-*SRC=RS1MB;DI_RS1MB;Diodes;Si;  1.00kV  1.00A  500ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS1MB D  ( IS=948n RS=81.3m BV=1.00k IBV=5.00u\r
-+ CJO=27.7p  M=0.333 N=2.48 TT=720n )\r
-**************************************************************************************************************************************\r
-\r
-*SRC=RS2A;DI_RS2A;Diodes;Si;  50.0V  1.50A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS2A D  ( IS=169u RS=4.81m BV=50.0 IBV=5.00u\r
-+ CJO=55.5p  M=0.333 N=6.02 TT=216n )\r
-******************************************************************************************************\r
-\r
-*SRC=RS2AA;DI_RS2AA;Diodes;Si;  50.0V  1.50A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS2AA D  ( IS=169u RS=4.81m BV=50.0 IBV=5.00u\r
-+ CJO=55.5p  M=0.333 N=6.02 TT=216n )\r
-******************************************************************************************************\r
-\r
-*SRC=RS2B;DI_RS2B;Diodes;Si;  100V  1.50A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS2B D  ( IS=169u RS=4.81m BV=100 IBV=5.00u\r
-+ CJO=55.5p  M=0.333 N=6.02 TT=216n )\r
-******************************************************************************************************\r
-\r
-*SRC=RS2BA;DI_RS2BA;Diodes;Si;  100V  1.50A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS2BA D  ( IS=169u RS=4.81m BV=100 IBV=5.00u\r
-+ CJO=55.5p  M=0.333 N=6.02 TT=216n )\r
-******************************************************************************************************\r
-\r
-*SRC=RS2D;DI_RS2D;Diodes;Si;  200V  1.50A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS2D D  ( IS=169u RS=4.81m BV=200 IBV=5.00u\r
-+ CJO=55.5p  M=0.333 N=6.02 TT=216n )\r
-******************************************************************************************************\r
-\r
-*SRC=RS2DA;DI_RS2DA;Diodes;Si;  200V  1.50A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS2DA D  ( IS=169u RS=4.81m BV=200 IBV=5.00u\r
-+ CJO=55.5p  M=0.333 N=6.02 TT=216n )\r
-******************************************************************************************************\r
-\r
-*SRC=RS2G;DI_RS2G;Diodes;Si;  400V  1.50A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS2G D  ( IS=169u RS=4.81m BV=400 IBV=5.00u\r
-+ CJO=55.5p  M=0.333 N=6.02 TT=216n )\r
-******************************************************************************************************\r
-\r
-*SRC=RS2GA;DI_RS2GA;Diodes;Si;  400V  1.50A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS2GA D  ( IS=169u RS=4.81m BV=400 IBV=5.00u\r
-+ CJO=55.5p  M=0.333 N=6.02 TT=216n )\r
-******************************************************************************************************\r
-\r
-*SRC=RS2J;DI_RS2J;Diodes;Si;  600V  1.50A  250ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS2J D  ( IS=169u RS=4.81m BV=600 IBV=5.00u\r
-+ CJO=55.5p  M=0.333 N=6.02 TT=360n )\r
-******************************************************************************************************\r
-\r
-*SRC=RS2JA;DI_RS2JA;Diodes;Si;  600V  1.50A  250ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS2JA D  ( IS=169u RS=4.81m BV=600 IBV=5.00u\r
-+ CJO=55.5p  M=0.333 N=6.02 TT=360n )\r
-******************************************************************************************************\r
-\r
-*SRC=RS2K;DI_RS2K;Diodes;Si;  800V  1.50A  500ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS2K D  ( IS=169u RS=4.81m BV=800 IBV=5.00u\r
-+ CJO=55.5p  M=0.333 N=6.02 TT=720n )\r
-******************************************************************************************************\r
-\r
-*SRC=RS2KA;DI_RS2KA;Diodes;Si;  800V  1.50A  500ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS2KA D  ( IS=169u RS=4.81m BV=800 IBV=5.00u\r
-+ CJO=55.5p  M=0.333 N=6.02 TT=720n )\r
-******************************************************************************************************\r
-\r
-*SRC=RS2M;DI_RS2M;Diodes;Si;  1.00kV  1.50A  500ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS2M D  ( IS=169u RS=4.81m BV=1.00k IBV=5.00u\r
-+ CJO=55.5p  M=0.333 N=6.02 TT=720n )\r
-******************************************************************************************************\r
-\r
-*SRC=RS2MA;DI_RS2MA;Diodes;Si;  1.00kV  1.50A  500ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS2MA D  ( IS=169u RS=4.81m BV=1.00k IBV=5.00u\r
-+ CJO=55.5p  M=0.333 N=6.02 TT=720n )\r
-******************************************************************************************************\r
-\r
-*SRC=RS3A;DI_RS3A;Diodes;Si;  50.0V  3.00A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS3A D  ( IS=200n RS=25.4m BV=50.0 IBV=5.00u\r
-+ CJO=92.5p  M=0.333 N=2.23 TT=216n )\r
-**********************************************************************************************************\r
-\r
-*SRC=RS3AB;DI_RS3AB;Diodes;Si;  50.0V  3.00A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS3AB D  ( IS=200n RS=25.4m BV=50.0 IBV=5.00u\r
-+ CJO=92.5p  M=0.333 N=2.23 TT=216n )\r
-**********************************************************************************************************\r
-\r
-*SRC=RS3B;DI_RS3B;Diodes;Si;  100V  3.00A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS3B D  ( IS=200n RS=25.4m BV=100 IBV=5.00u\r
-+ CJO=92.5p  M=0.333 N=2.23 TT=216n )\r
-**********************************************************************************************************\r
-\r
-*SRC=RS3BB;DI_RS3BB;Diodes;Si;  100V  3.00A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS3BB D  ( IS=200n RS=25.4m BV=100 IBV=5.00u\r
-+ CJO=92.5p  M=0.333 N=2.23 TT=216n )\r
-**********************************************************************************************************\r
-\r
-*SRC=RS3D;DI_RS3D;Diodes;Si;  200V  3.00A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS3D D  ( IS=200n RS=25.4m BV=200 IBV=5.00u\r
-+ CJO=92.5p  M=0.333 N=2.23 TT=216n )\r
-**********************************************************************************************************\r
-\r
-*SRC=RS3DB;DI_RS3DB;Diodes;Si;  200V  3.00A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS3DB D  ( IS=200n RS=25.4m BV=200 IBV=5.00u\r
-+ CJO=92.5p  M=0.333 N=2.23 TT=216n )\r
-**********************************************************************************************************\r
-\r
-*SRC=RS3G;DI_RS3G;Diodes;Si;  400V  3.00A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS3G D  ( IS=200n RS=25.4m BV=400 IBV=5.00u\r
-+ CJO=92.5p  M=0.333 N=2.23 TT=216n )\r
-**********************************************************************************************************\r
-\r
-*SRC=RS3GB;DI_RS3GB;Diodes;Si;  400V  3.00A  150ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS3GB D  ( IS=200n RS=25.4m BV=400 IBV=5.00u\r
-+ CJO=92.5p  M=0.333 N=2.23 TT=216n )\r
-**********************************************************************************************************\r
-\r
-*SRC=RS3J;DI_RS3J;Diodes;Si;  600V  3.00A  250ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS3J D  ( IS=200n RS=25.4m BV=600 IBV=5.00u\r
-+ CJO=92.5p  M=0.333 N=2.23 TT=360n )\r
-**********************************************************************************************************\r
-\r
-*SRC=RS3JB;DI_RS3JB;Diodes;Si;  600V  3.00A  250ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS3JB D  ( IS=200n RS=25.4m BV=600 IBV=5.00u\r
-+ CJO=92.5p  M=0.333 N=2.23 TT=360n )\r
-**********************************************************************************************************\r
-\r
-*SRC=RS3K;DI_RS3K;Diodes;Si;  800V  3.00A  500ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS3K D  ( IS=200n RS=25.4m BV=800 IBV=5.00u\r
-+ CJO=92.5p  M=0.333 N=2.23 TT=720n )\r
-***********************************************************************************************************\r
-\r
-*SRC=RS3KB;DI_RS3KB;Diodes;Si;  800V  3.00A  500ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS3KB D  ( IS=200n RS=25.4m BV=800 IBV=5.00u\r
-+ CJO=92.5p  M=0.333 N=2.23 TT=720n )\r
-***********************************************************************************************************\r
-\r
-*SRC=RS3M;DI_RS3M;Diodes;Si;  1.00kV  3.00A  500ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS3M D  ( IS=200n RS=25.4m BV=1.00k IBV=5.00u\r
-+ CJO=92.5p  M=0.333 N=2.23 TT=720n )\r
-***********************************************************************************************************\r
-\r
-*SRC=RS3MB;DI_RS3MB;Diodes;Si;  1.00kV  3.00A  500ns   Diodes Inc. Fast Rectifier\r
-.MODEL DI_RS3MB D  ( IS=200n RS=25.4m BV=1.00k IBV=5.00u\r
-+ CJO=92.5p  M=0.333 N=2.23 TT=720n )\r
-***********************************************************************************************************\r
-\r
-*SRC=SF10AG;DI_SF10AG;Diodes;Si;  50.0V  1.00A  35.0ns   Diodes Inc. \r
-.MODEL DI_SF10AG D  ( IS=1.42n RS=42.0m BV=50.0 IBV=10.0u\r
-+ CJO=139p  M=0.333 N=1.70 TT=50.4n )\r
-\r
-*SRC=SF10BG;DI_SF10BG;Diodes;Si;  100V  1.00A  35.0ns   Diodes Inc. \r
-.MODEL DI_SF10BG D  ( IS=1.42n RS=42.0m BV=100 IBV=10.0u\r
-+ CJO=139p  M=0.333 N=1.70 TT=50.4n )\r
-\r
-*SRC=SF10CG;DI_SF10CG;Diodes;Si;  150V  1.00A  35.0ns   Diodes Inc. \r
-.MODEL DI_SF10CG D  ( IS=1.42n RS=42.0m BV=150 IBV=10.0u\r
-+ CJO=139p  M=0.333 N=1.70 TT=50.4n )\r
-\r
-*SRC=SF10DG;DI_SF10DG;Diodes;Si;  200V  1.00A  35.0ns   Diodes Inc. \r
-.MODEL DI_SF10DG D  ( IS=1.42n RS=42.0m BV=200 IBV=10.0u\r
-+ CJO=139p  M=0.333 N=1.70 TT=50.4n )\r
-\r
-*SRC=SF10FG;DI_SF10FG;Diodes;Si; 300V 1.00A 40.0ns Diodes Inc. -\r
-.MODEL DI_SF10FG D ( IS=50.9p RS=75.5m BV=300 IBV=10.0u\r
-+ CJO=139p M=0.333 N=1.70 TT=57.6n )\r
-\r
-*SRC=SF10GG;DI_SF10GG;Diodes;Si; 400V 1.00A 40.0ns Diodes Inc. -\r
-.MODEL DI_SF10GG D ( IS=50.9p RS=75.5m BV=400 IBV=10.0u\r
-+ CJO=139p M=0.333 N=1.70 TT=57.6n )\r
-\r
-*SRC=SF10HG;DI_SF10HG;Diodes;Si; 500V 1.00A 50.0ns Diodes Inc. -\r
-.MODEL DI_SF10HG D ( IS=13.5u RS=30.9m BV=500 IBV=10.0u\r
-+ CJO=92.5p M=0.333 N=5.40 TT=72.0n )\r
-\r
-*SRC=SF10JG;DI_SF10JG;Diodes;Si;  600V  1.00A  50.0ns   Diodes Inc. -\r
-.MODEL DI_SF10JG D  ( IS=13.5u RS=30.9m BV=600 IBV=10.0u\r
-+ CJO=92.5p  M=0.333 N=5.40 TT=72.0n )\r
-\r
-*SRC=US1A;DI_US1A;Diodes;Si;  50.0V  1.00A  50.0ns   Diodes Inc. -\r
-.MODEL DI_US1A D  ( IS=667n RS=72.0m BV=50.0 IBV=5.00u\r
-+ CJO=37.0p  M=0.333 N=2.41 TT=72.0n )\r
-\r
-*SRC=US1B;DI_US1B;Diodes;Si;  100V  1.00A  50.0ns   Diodes Inc. -\r
-.MODEL DI_US1B D  ( IS=667n RS=72.0m BV=100 IBV=5.00u\r
-+ CJO=37.0p  M=0.333 N=2.41 TT=72.0n )\r
-\r
-*SRC=US1D;DI_US1D;Diodes;Si;  200V  1.00A  50.0ns   Diodes Inc. -\r
-.MODEL DI_US1D D  ( IS=667n RS=72.0m BV=200 IBV=5.00u\r
-+ CJO=37.0p  M=0.333 N=2.41 TT=72.0n )\r
-\r
-*SRC=US1G;DI_US1G;Diodes;Si;  400V  1.00A  50.0ns   Diodes Inc. \r
-.MODEL DI_US1G D  ( IS=540p RS=0.116 BV=400 IBV=5.00u\r
-+ CJO=37.0p  M=0.333 N=1.70 TT=72.0n )\r
-\r
-*SRC=US1J;DI_US1J;Diodes;Si;  600V  1.00A  75.0ns   Diodes Inc. -\r
-.MODEL DI_US1J D  ( IS=709n RS=82.3m BV=600 IBV=5.00u\r
-+ CJO=18.5p  M=0.333 N=3.23 TT=108n )\r
-\r
-*SRC=US1K;DI_US1K;Diodes;Si;  800V  1.00A  75.0ns   Diodes Inc. -\r
-.MODEL DI_US1K D  ( IS=709n RS=82.3m BV=800 IBV=5.00u\r
-+ CJO=18.5p  M=0.333 N=3.23 TT=108n )\r
-\r
-*SRC=US1M;DI_US1M;Diodes;Si;  1.00kV  1.00A  75.0ns   Diodes Inc. -\r
-.MODEL DI_US1M D  ( IS=709n RS=82.3m BV=1.00k IBV=5.00u\r
-+ CJO=18.5p  M=0.333 N=3.23 TT=108n )\r
-\r
-*SRC=MBR10100CT;DI_MBR10100CT;Diodes;Si;  100V  10.0A  5.00ns   Diodes Inc. \r
-.MODEL DI_MBR10100CT D  ( IS=27.9n RS=4.20m BV=100 IBV=100u\r
-+ CJO=555p  M=0.333 N=1.28 TT=7.20n )\r
-\r
-*SRC=MBR1030CT;DI_MBR1030CT;Diodes;Si;  30.0V  10.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r\r
-.MODEL DI_MBR1030CT D  ( IS=4.25u RS=13.0m BV=30.0 IBV=100u\r\r
-+ CJO=318p  M=0.333 N=1.15 TT=14.4n )\r
-\r
-*SRC=MBR1040CT;DI_MBR1040CT;Diodes;Si;  40.0V  10.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r\r
-.MODEL DI_MBR1040CT D  ( IS=4.25u RS=13.0m BV=40.0 IBV=100u\r\r
-+ CJO=318p  M=0.333 N=1.15 TT=14.4n )\r
-\r
-*SRC=MBR1045CT;DI_MBR1045CT;Diodes;Si;  45.0V  10.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r\r
-.MODEL DI_MBR1045CT D  ( IS=4.25u RS=13.0m BV=45.0 IBV=100u\r\r
-+ CJO=318p  M=0.333 N=1.15 TT=14.4n )\r
-\r
-*SRC=MBR1050CT;DI_MBR1050CT;Diodes;Si;  50.0V  10.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r\r
-.MODEL DI_MBR1050CT D  ( IS=7.24u RS=14.5m BV=50.0 IBV=100u\r\r
-+ CJO=318p  M=0.333 N=1.29 TT=14.4n )\r
-\r
-*SRC=MBR1060CT;DI_MBR1060CT;Diodes;Si;  60.0V  10.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r\r
-.MODEL DI_MBR1060CT D  ( IS=7.24u RS=14.5m BV=60.0 IBV=100u\r\r
-+ CJO=318p  M=0.333 N=1.29 TT=14.4n )\r
-\r
-*SRC=SB1100;DI_SB1100;Diodes;Si;  100.0V  1.00A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_SB1100 D  ( IS=6.63u RS=62.3m BV=100.0 IBV=500u \r
-+ CJO=199p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=SB120;DI_SB120;Diodes;Si;  20.0V  1.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_SB120 D  ( IS=31.5u RS=49.2m BV=20.0 IBV=500u\r
-+ CJO=239p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=SB130;DI_SB130;Diodes;Si;  30.0V  1.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_SB130 D  ( IS=31.5u RS=49.2m BV=30.0 IBV=500u\r
-+ CJO=239p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=SB140;DI_SB140;Diodes;Si;  40.0V  1.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_SB140 D  ( IS=31.5u RS=49.2m BV=40.0 IBV=500u\r
-+ CJO=239p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=SB150;DI_SB150;Diodes;Si;  50.0V  1.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_SB150 D  ( IS=1.17u RS=42.0m BV=50.0 IBV=500u\r
-+ CJO=172p  M=0.333 N=1.28 TT=7.20n )\r
-\r
-*SRC=SB160;DI_SB160;Diodes;Si;  60.0V  1.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_SB160 D  ( IS=1.17u RS=42.0m BV=60.0 IBV=500u\r
-+ CJO=172p  M=0.333 N=1.28 TT=7.20n )\r
-\r
-*SRC=SB170;DI_SB170;Diodes;Si;  70.0V  1.00A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_SB170 D  ( IS=6.63u RS=62.3m BV=70.0 IBV=500u \r
-+ CJO=199p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=SB180;DI_SB180;Diodes;Si;  80.0V  1.00A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_SB180 D  ( IS=6.63u RS=62.3m BV=80.0 IBV=500u \r
-+ CJO=199p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=SB190;DI_SB190;Diodes;Si;  90.0V  1.00A  5.00ns   Diodes Inc. Schottky \r
-.MODEL DI_SB190 D  ( IS=6.63u RS=62.3m BV=90.0 IBV=500u \r
-+ CJO=199p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=SB340;DI_SB340;Diodes;Si;  40.0V  3.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_SB340 D  ( IS=85.9n RS=18.5m BV=40.0 IBV=70.0u\r
-+ CJO=411p  M=0.333 N=0.754 TT=7.20n )\r
-\r
-*SRC=SBL1030;DI_SBL1030;Diodes;Si;  30.0V  10.0A  5.00ns   Diodes Inc. Schottky \r.MODEL DI_SBL1030 D  ( IS=759u RS=4.20m BV=30.0 IBV=1.00m\r+ CJO=2.12n  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=SBL1030CT;DI_SBL1030CT;Diodes;Si;  30.0V  10.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL1030CT D  ( IS=759u RS=4.20m BV=30.0 IBV=500u\r+ CJO=941p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=SBL1035;DI_SBL1035;Diodes;Si;  35.0V  10.0A  5.00ns   Diodes Inc. Schottky \r.MODEL DI_SBL1035 D  ( IS=759u RS=4.20m BV=35.0 IBV=1.00m\r+ CJO=2.12n  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=SBL1035CT;DI_SBL1035CT;Diodes;Si;  35.0V  10.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL1035CT D  ( IS=759u RS=4.20m BV=35.0 IBV=500u\r+ CJO=941p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=SBL1040;DI_SBL1040;Diodes;Si;  40.0V  10.0A  5.00ns   Diodes Inc. Schottky \r.MODEL DI_SBL1040 D  ( IS=759u RS=4.20m BV=40.0 IBV=1.00m\r+ CJO=2.12n  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=SBL1040CT;DI_SBL1040CT;Diodes;Si;  40.0V  10.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL1040CT D  ( IS=759u RS=4.20m BV=40.0 IBV=500u\r+ CJO=941p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=SBL1045;DI_SBL1045;Diodes;Si;  45.0V  10.0A  5.00ns   Diodes Inc. Schottky \r.MODEL DI_SBL1045 D  ( IS=759u RS=4.20m BV=45.0 IBV=1.00m\r+ CJO=2.12n  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=SBL1045CT;DI_SBL1045CT;Diodes;Si;  45.0V  10.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL1045CT D  ( IS=759u RS=4.20m BV=45.0 IBV=500u\r+ CJO=941p  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=SBL1050;DI_SBL1050;Diodes;Si;  50.0V  10.0A  5.00ns   Diodes Inc. Schottky \r.MODEL DI_SBL1050 D  ( IS=210u RS=4.22m BV=50.0 IBV=1.00m\r+ CJO=2.12n  M=0.333 N=2.03 TT=7.20n )\r
-\r
-*SRC=SBL1050CT;DI_SBL1050CT;Diodes;Si;  50.0V  10.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL1050CT D  ( IS=210u RS=4.22m BV=50.0 IBV=500u\r+ CJO=941p  M=0.333 N=2.03 TT=7.20n )\r
-\r
-*SRC=SBL1060;DI_SBL1060;Diodes;Si;  60.0V  10.0A  5.00ns   Diodes Inc. Schottky \r.MODEL DI_SBL1060 D  ( IS=210u RS=4.22m BV=60.0 IBV=1.00m\r+ CJO=2.12n  M=0.333 N=2.03 TT=7.20n )\r
-\r
-*SRC=SBL1060CT;DI_SBL1060CT;Diodes;Si;  60.0V  10.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL1060CT D  ( IS=210u RS=4.22m BV=60.0 IBV=500u\r+ CJO=941p  M=0.333 N=2.03 TT=7.20n )\r
-\r
-*SRC=SBL1630;DI_SBL1630;Diodes;Si;  30.0V  16.0A  5.00ns   Diodes Inc. Schottky\r.MODEL DI_SBL1630 D  ( IS=903u RS=3.60m BV=30.0 IBV=1.00m\r+ CJO=1.72n  M=0.333 N=1.67 TT=7.20n )\r
-\r
-*SRC=SBL1630PT;DI_SBL1630PT;Diodes;Si;  30.0V  16.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBL1630PT D  ( IS=575u RS=3.47m BV=30.0 IBV=500u\r
-+ CJO=1.86n  M=0.333 N=1.68 TT=7.20n )\r
-\r
-*SRC=SBL1635;DI_SBL1635;Diodes;Si;  35.0V  16.0A  5.00ns   Diodes Inc. Schottky\r.MODEL DI_SBL1635 D  ( IS=903u RS=3.60m BV=35.0 IBV=1.00m\r+ CJO=1.72n  M=0.333 N=1.67 TT=7.20n )\r
-\r
-*SRC=SBL1635PT;DI_SBL1635PT;Diodes;Si;  35.0V  16.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBL1635PT D  ( IS=575u RS=3.47m BV=35.0 IBV=500u\r
-+ CJO=1.86n  M=0.333 N=1.68 TT=7.20n )\r
-\r
-*SRC=SBL1640;DI_SBL1640;Diodes;Si;  40.0V  16.0A  5.00ns   Diodes Inc. Schottky\r.MODEL DI_SBL1640 D  ( IS=903u RS=3.60m BV=40.0 IBV=1.00m\r+ CJO=1.72n  M=0.333 N=1.67 TT=7.20n )\r
-\r
-*SRC=SBL1640PT;DI_SBL1640PT;Diodes;Si;  40.0V  16.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBL1640PT D  ( IS=575u RS=3.47m BV=40.0 IBV=500u\r
-+ CJO=1.86n  M=0.333 N=1.68 TT=7.20n )\r
-\r
-*SRC=SBL1645;DI_SBL1645;Diodes;Si;  45.0V  16.0A  5.00ns   Diodes Inc. Schottky\r.MODEL DI_SBL1645 D  ( IS=903u RS=3.60m BV=45.0 IBV=1.00m\r+ CJO=1.72n  M=0.333 N=1.67 TT=7.20n )\r
-\r
-*SRC=SBL1645PT;DI_SBL1645PT;Diodes;Si;  45.0V  16.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBL1645PT D  ( IS=575u RS=3.47m BV=45.0 IBV=500u\r
-+ CJO=1.86n  M=0.333 N=1.68 TT=7.20n )\r
-\r
-*SRC=SBL1650;DI_SBL1650;Diodes;Si;  50.0V  16.0A  5.00ns   Diodes Inc. Schottky\r.MODEL DI_SBL1650 D  ( IS=1.38m RS=3.22m BV=50.0 IBV=1.00m\r+ CJO=1.72n  M=0.333 N=2.27 TT=7.20n )\r
-\r
-*SRC=SBL1650PT;DI_SBL1650PT;Diodes;Si;  50.0V  16.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBL1650PT D  ( IS=89.9u RS=3.60m BV=50.0 IBV=500u\r
-+ CJO=1.86n  M=0.333 N=1.67 TT=7.20n )\r
-\r
-*SRC=SBL1660;DI_SBL1660;Diodes;Si;  60.0V  16.0A  5.00ns   Diodes Inc. Schottky\r.MODEL DI_SBL1660 D  ( IS=1.38m RS=3.22m BV=60.0 IBV=1.00m\r+ CJO=1.72n  M=0.333 N=2.27 TT=7.20n )\r
-\r
-*SRC=SBL1660PT;DI_SBL1660PT;Diodes;Si;  60.0V  16.0A  5.00ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBL1660PT D  ( IS=89.9u RS=3.60m BV=60.0 IBV=500u\r
-+ CJO=1.86n  M=0.333 N=1.67 TT=7.20n )\r
-\r
-*SRC=SBL2030CT;DI_SBL2030CT;Diodes;Si;  30.0V  20.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL2030CT D  ( IS=4.83m RS=2.37m BV=30.0 IBV=1.00m\r+ CJO=1.34n  M=0.333 N=2.28 TT=14.4n )\r
-\r
-*SRC=SBL2030PT;DI_SBL2030PT;Diodes;Si;  30.0V  20.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL2030PT D  ( IS=597u RS=2.88m BV=30.0 IBV=1.00m\r+ CJO=2.52n  M=0.333 N=1.59 TT=14.4n )\r
-\r
-*SRC=SBL2035CT;DI_SBL2035CT;Diodes;Si;  35.0V  20.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL2035CT D  ( IS=4.83m RS=2.37m BV=35.0 IBV=1.00m\r+ CJO=1.34n  M=0.333 N=2.28 TT=14.4n )\r
-\r
-*SRC=SBL2035PT;DI_SBL2035PT;Diodes;Si;  35.0V  20.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL2035PT D  ( IS=597u RS=2.88m BV=35.0 IBV=1.00m\r+ CJO=2.52n  M=0.333 N=1.59 TT=14.4n )\r
-\r
-*SRC=SBL2040CT;DI_SBL2040CT;Diodes;Si;  40.0V  20.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL2040CT D  ( IS=4.83m RS=2.37m BV=40.0 IBV=1.00m\r+ CJO=1.34n  M=0.333 N=2.28 TT=14.4n )\r
-\r
-*SRC=SBL2040PT;DI_SBL2040PT;Diodes;Si;  40.0V  20.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL2040PT D  ( IS=597u RS=2.88m BV=40.0 IBV=1.00m\r+ CJO=2.52n  M=0.333 N=1.59 TT=14.4n )\r
-\r
-*SRC=SBL2045CT;DI_SBL2045CT;Diodes;Si;  45.0V  20.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL2045CT D  ( IS=4.83m RS=2.37m BV=45.0 IBV=1.00m\r+ CJO=1.34n  M=0.333 N=2.28 TT=14.4n )\r
-\r
-*SRC=SBL2045PT;DI_SBL2045PT;Diodes;Si;  45.0V  20.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL2045PT D  ( IS=597u RS=2.88m BV=45.0 IBV=1.00m\r+ CJO=2.52n  M=0.333 N=1.59 TT=14.4n )\r
-\r
-*SRC=SBL2050CT;DI_SBL2050CT;Diodes;Si;  50.0V  20.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL2050CT D  ( IS=3.50m RS=2.11m BV=50.0 IBV=1.00m\r+ CJO=1.34n  M=0.333 N=2.95 TT=14.4n )\r
-\r
-*SRC=SBL2050PT;DI_SBL2050PT;Diodes;Si;  50.0V  20.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL2050PT D  ( IS=587u RS=2.11m BV=50.0 IBV=1.00m\r+ CJO=2.52n  M=0.333 N=2.12 TT=14.4n )\r
-\r
-*SRC=SBL2060CT;DI_SBL2060CT;Diodes;Si;  60.0V  20.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL2060CT D  ( IS=3.50m RS=2.11m BV=60.0 IBV=1.00m\r+ CJO=1.34n  M=0.333 N=2.95 TT=14.4n )\r
-\r
-*SRC=SBL2060PT;DI_SBL2060PT;Diodes;Si;  60.0V  20.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL2060PT D  ( IS=587u RS=2.11m BV=60.0 IBV=1.00m\r+ CJO=2.52n  M=0.333 N=2.12 TT=14.4n )\r
-\r
-*SRC=SBL3030CT;DI_SBL3030CT;Diodes;Si;  30.0V  30.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL3030CT D  ( IS=200u RS=1.92m BV=30.0 IBV=1.00m\r+ CJO=809p  M=0.333 N=1.42 TT=14.4n )\r
-\r
-*SRC=SBL3030PT;DI_SBL3030PT;Diodes;Si;  30.0V  30.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBL3030PT D  ( IS=441u RS=1.92m BV=30.0 IBV=1.00m\r
-+ CJO=1.33n  M=0.333 N=1.51 TT=14.4n )\r
-\r
-*SRC=SBL3035PT;DI_SBL3035PT;Diodes;Si;  35.0V  30.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBL3035PT D  ( IS=441u RS=1.92m BV=35.0 IBV=1.00m\r
-+ CJO=1.33n  M=0.333 N=1.51 TT=14.4n )\r
-\r
-*SRC=SBL3040CT;DI_SBL3040CT;Diodes;Si;  40.0V  30.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL3040CT D  ( IS=200u RS=1.92m BV=40.0 IBV=1.00m\r+ CJO=809p  M=0.333 N=1.42 TT=14.4n )\r
-\r
-*SRC=SBL3040PT;DI_SBL3040PT;Diodes;Si;  40.0V  30.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBL3040PT D  ( IS=441u RS=1.92m BV=40.0 IBV=1.00m\r
-+ CJO=1.33n  M=0.333 N=1.51 TT=14.4n )\r
-\r
-*SRC=SBL3045CT;DI_SBL3045CT;Diodes;Si;  45.0V  30.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL3045CT D  ( IS=200u RS=1.92m BV=45.0 IBV=1.00m\r+ CJO=809p  M=0.333 N=1.42 TT=14.4n )\r
-\r
-*SRC=SBL3045PT;DI_SBL3045PT;Diodes;Si;  45.0V  30.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBL3045PT D  ( IS=441u RS=1.92m BV=45.0 IBV=1.00m\r
-+ CJO=1.33n  M=0.333 N=1.51 TT=14.4n )\r
-\r
-*SRC=SBL3050CT;DI_SBL3050CT;Diodes;Si;  50.0V  30.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL3050CT D  ( IS=264u RS=1.99m BV=50.0 IBV=1.00m\r+ CJO=809p  M=0.333 N=1.67 TT=14.4n )\r
-\r
-*SRC=SBL3050PT;DI_SBL3050PT;Diodes;Si;  50.0V  30.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBL3050PT D  ( IS=346u RS=1.61m BV=50.0 IBV=1.00m\r
-+ CJO=1.33n  M=0.333 N=2.02 TT=14.4n )\r
-\r
-*SRC=SBL3060CT;DI_SBL3060CT;Diodes;Si;  60.0V  30.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL3060CT D  ( IS=264u RS=1.99m BV=60.0 IBV=1.00m\r+ CJO=809p  M=0.333 N=1.67 TT=14.4n )\r
-\r
-*SRC=SBL3060PT;DI_SBL3060PT;Diodes;Si;  60.0V  30.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBL3060PT D  ( IS=346u RS=1.61m BV=60.0 IBV=1.00m\r
-+ CJO=1.33n  M=0.333 N=2.02 TT=14.4n)\r
-\r
-*SRC=SBL4030PT;DI_SBL4030PT;Diodes;Si;  30.0V  40.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBL4030PT D  ( IS=10.9u RS=1.53m BV=30.0 IBV=1.00m\r
-+ CJO=1.33n  M=0.333 N=1.08 TT=14.4n )\r
-\r
-*SRC=SBL4035PT;DI_SBL4035PT;Diodes;Si;  35.0V  40.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBL4035PT D  ( IS=10.9u RS=1.53m BV=35.0 IBV=1.00m\r
-+ CJO=1.33n  M=0.333 N=1.08 TT=14.4n )\r
-\r
-*SRC=SBL4040PT;DI_SBL4040PT;Diodes;Si;  40.0V  40.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL4040PT D  ( IS=10.9u RS=1.53m BV=40.0 IBV=1.00m\r+ CJO=1.33n  M=0.333 N=1.08 TT=14.4n )\r
-\r
-*SRC=SBL4045PT;DI_SBL4045PT;Diodes;Si;  45.0V  40.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBL4045PT D  ( IS=10.9u RS=1.53m BV=45.0 IBV=1.00m\r
-+ CJO=1.33n  M=0.333 N=1.08 TT=14.4n )\r
-\r
-*SRC=SBL4050PT;DI_SBL4050PT;Diodes;Si;  50.0V  40.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBL4050PT D  ( IS=53.0u RS=1.26m BV=50.0 IBV=1.00m\r
-+ CJO=1.33n  M=0.333 N=1.70 TT=14.4n )\r
-\r
-*SRC=SBL4060PT;DI_SBL4060PT;Diodes;Si;  60.0V  40.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r
-.MODEL DI_SBL4060PT D  ( IS=53.0u RS=1.26m BV=60.0 IBV=1.00m\r
-+ CJO=1.33n  M=0.333 N=1.70 TT=14.4n )\r
-\r
-*SRC=SBL530;DI_SBL530;Diodes;Si;  30.0V  5.00A  10.0ns   Diodes Inc. Schottky\r.MODEL DI_SBL530 D  ( IS=926u RS=9.47m BV=30.0 IBV=500u\r+ CJO=968p  M=0.333 N=1.69 TT=14.4n )\r
-\r
-*SRC=SBL535;DI_SBL535;Diodes;Si;  35.0V  5.00A  10.0ns   Diodes Inc. Schottky\r.MODEL DI_SBL535 D  ( IS=926u RS=9.47m BV=35.0 IBV=500u\r+ CJO=968p  M=0.333 N=1.69 TT=14.4n )\r
-\r
-*SRC=SBL540;DI_SBL540;Diodes;Si;  40.0V  5.00A  10.0ns   Diodes Inc. Schottky\r.MODEL DI_SBL540 D  ( IS=926u RS=9.47m BV=40.0 IBV=500u\r+ CJO=968p  M=0.333 N=1.69 TT=14.4n )\r
-\r
-*SRC=SBL545;DI_SBL545;Diodes;Si;  45.0V  5.00A  10.0ns   Diodes Inc. Schottky\r.MODEL DI_SBL545 D  ( IS=926u RS=9.47m BV=45.0 IBV=500u\r+ CJO=968p  M=0.333 N=1.69 TT=14.4n )\r
-\r
-*SRC=SBL550;DI_SBL550;Diodes;Si;  50.0V  5.00A  10.0ns   Diodes Inc. Schottky\r.MODEL DI_SBL550 D  ( IS=14.0u RS=8.33m BV=50.0 IBV=500u\r+ CJO=968p  M=0.333 N=1.70 TT=14.4n )\r
-\r
-*SRC=SBL560;DI_SBL560;Diodes;Si;  60.0V  5.00A  10.0ns   Diodes Inc. Schottky\r.MODEL DI_SBL560 D  ( IS=14.0u RS=8.33m BV=60.0 IBV=500u\r+ CJO=968p  M=0.333 N=1.70 TT=14.4n )\r
-\r
-*SRC=SBL6030PT;DI_SBL6030PT;Diodes;Si;  30.0V  60.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL6030PT D  ( IS=1.93m RS=917u BV=30.0 IBV=20.0m\r+ CJO=3.25n  M=0.333 N=1.68 TT=14.4n )\r
-\r
-*SRC=SBL6040PT;DI_SBL6040PT;Diodes;Si;  40.0V  60.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL6040PT D  ( IS=1.93m RS=917u BV=40.0 IBV=20.0m\r+ CJO=3.25n  M=0.333 N=1.68 TT=14.4n )\r
-\r
-*SRC=SBL6050PT;DI_SBL6050PT;Diodes;Si;  50.0V  60.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL6050PT D  ( IS=353u RS=909u BV=50.0 IBV=20.0m\r+ CJO=3.25n  M=0.333 N=1.76 TT=14.4n )\r
-\r
-*SRC=SBL6060PT;DI_SBL6060PT;Diodes;Si;  60.0V  60.0A  10.0ns   Diodes Inc. Schottky - Single device of dual\r.MODEL DI_SBL6060PT D  ( IS=353u RS=909u BV=60.0 IBV=20.0m\r+ CJO=3.25n  M=0.333 N=1.76 TT=14.4n )\r
-\r
-*SRC=SBL830;DI_SBL830;Diodes;Si;  30.0V  8.00A  10.0ns   Diodes Inc. Schottky\r
-.MODEL DI_SBL830 D  ( IS=396u RS=4.50m BV=30.0 IBV=500u\r
-+ CJO=1.72n  M=0.333 N=1.71 TT=14.4n )\r
-\r
-*SRC=SBL835;DI_SBL835;Diodes;Si;  35.0V  8.00A  10.0ns   Diodes Inc. Schottky\r
-.MODEL DI_SBL835 D  ( IS=396u RS=4.50m BV=35.0 IBV=500u\r
-+ CJO=1.72n  M=0.333 N=1.71 TT=14.4n )\r
-\r
-*SRC=SBL840;DI_SBL840;Diodes;Si;  40.0V  8.00A  10.0ns   Diodes Inc. Schottky\r
-.MODEL DI_SBL840 D  ( IS=396u RS=4.50m BV=40.0 IBV=500u\r
-+ CJO=1.72n  M=0.333 N=1.71 TT=14.4n )\r
-\r
-*SRC=SBL845;DI_SBL845;Diodes;Si;  45.0V  8.00A  10.0ns   Diodes Inc. Schottky\r
-.MODEL DI_SBL845 D  ( IS=396u RS=4.50m BV=45.0 IBV=500u\r
-+ CJO=1.72n  M=0.333 N=1.71 TT=14.4n )\r
-\r
-*SRC=SBL850;DI_SBL850;Diodes;Si;  50.0V  8.00A  10.0ns   Diodes Inc. Schottky\r
-.MODEL DI_SBL850 D  ( IS=30.8u RS=5.66m BV=50.0 IBV=500u\r
-+ CJO=1.72n  M=0.333 N=1.69 TT=14.4n )\r
-\r
-*SRC=SBL860;DI_SBL860;Diodes;Si;  60.0V  8.00A  10.0ns   Diodes Inc. Schottky\r
-.MODEL DI_SBL860 D  ( IS=30.8u RS=5.66m BV=60.0 IBV=500u\r
-+ CJO=1.72n  M=0.333 N=1.69 TT=14.4n )\r
-\r
-*SRC=SD830;DI_SD830;Diodes;Si;  30.0V  8.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_SD830 D  ( IS=248u RS=5.25m BV=30.0 IBV=1.00m\r
-+ CJO=1.06n  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=SD840;DI_SD840;Diodes;Si;  40.0V  8.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_SD840 D  ( IS=248u RS=5.25m BV=40.0 IBV=1.00m\r
-+ CJO=1.06n  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=SD845;DI_SD845;Diodes;Si;  45.0V  8.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_SD845 D  ( IS=248u RS=5.25m BV=45.0 IBV=1.00m\r
-+ CJO=1.06n  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=SD860;DI_SD860;Diodes;Si;  60.0V  8.00A  5.00ns   Diodes Inc. Schottky\r
-.MODEL DI_SD860 D  ( IS=248u RS=5.25m BV=60.0 IBV=1.00m\r
-+ CJO=1.06n  M=0.333 N=1.70 TT=7.20n )\r
-\r
-*SRC=BC807-16;DI_BC807-16;BJTs PNP; Si;  45.0V  0.500A  220MHz   Diodes\r
-Inc. BJTs\r
-.MODEL DI_BC807-16  PNP (IS=50.7f NF=1.00 BF=342 VAF=121\r
-+ IKF=0.273 ISE=24.2p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m\r
-+ XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 \r
-+ TF=631p TR=111n EG=1.12 )\r
-\r
-*SRC=BC807-25;DI_BC807-25;BJTs PNP; Si;  45.0V  0.500A  220MHz   Diodes\r
-Inc. BJTs\r
-.MODEL DI_BC807-25  PNP (IS=50.7f NF=1.00 BF=547 VAF=121\r
-+ IKF=0.273 ISE=15.1p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m\r
-+ XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 \r
-+ TF=631p TR=109n EG=1.12 )\r
-\r
-*SRC=BC807-40;DI_BC807-40;BJTs PNP; Si;  45.0V  0.500A  220MHz   Diodes\r
-Inc. BJTs\r
-.MODEL DI_BC807-40  PNP (IS=50.7f NF=1.00 BF=821 VAF=121\r
-+ IKF=0.273 ISE=10.1p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m\r
-+ XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 \r
-+ TF=631p TR=108n EG=1.12 )\r
-\r
-*SRC=BC817-16;DI_BC817-16;BJTs NPN; Si;  45.0V  0.800A  220MHz   Diodes\r
-Inc. BJTs\r
-.MODEL DI_BC817-16  NPN (IS=4.04n NF=1.00 BF=342 VAF=121\r
-+ IKF=0.273 ISE=6.86n NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m\r
-+ XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 \r
-+ TF=651p TR=111n EG=1.12 )\r
-\r
-*SRC=BC817-25;DI_BC817-25;BJTs NPN; Si;  45.0V  0.800A  220MHz   Diodes\r
-Inc. BJTs\r
-.MODEL DI_BC817-25  NPN (IS=4.04n NF=1.00 BF=548 VAF=121\r
-+ IKF=0.273 ISE=4.29n NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m\r
-+ XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 \r
-+ TF=651p TR=109n EG=1.12 )\r
-\r
-*SRC=BC817-40;DI_BC817-40;BJTs NPN; Si;  45.0V  0.800A  220MHz   Diodes\r
-Inc. BJTs\r
-.MODEL DI_BC817-40  NPN (IS=4.04n NF=1.00 BF=822 VAF=121\r
-+ IKF=0.273 ISE=2.86n NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m\r
-+ XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 \r
-+ TF=651p TR=108n EG=1.12 )\r
-\r
-*SRC=BC846A;DI_BC846A;BJTs NPN; Si;  65.0V  0.100A  300MHz   Diodes Inc\r
-BJTs\r
-.MODEL DI_BC846A  NPN (IS=10.2f NF=1.00 BF=305 VAF=145\r
-+ IKF=53.6m ISE=5.86p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.915 RB=3.66 RC=0.366\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 \r
-+ TF=416p TR=50.3n EG=1.12 )\r
-\r
-*SRC=BC846AW;DI_BC846AW;BJTs NPN; Si;  65.0V  0.100A  300MHz   Diodes Inc\r
-BJTs\r
-.MODEL DI_BC846AW  NPN (IS=10.2f NF=1.00 BF=305 VAF=145\r
-+ IKF=53.6m ISE=5.86p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.915 RB=3.66 RC=0.366\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 \r
-+ TF=416p TR=50.3n EG=1.12 )\r
-\r
-*SRC=BC846B;DI_BC846B;BJTs NPN; Si;  65.0V  0.100A  300MHz   Diodes Inc\r
-BJTs\r
-.MODEL DI_BC846B  NPN (IS=10.2f NF=1.00 BF=650 VAF=145\r
-+ IKF=39.5m ISE=2.93p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.105 RE=0.915 RB=3.66 RC=0.366\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 \r
-+ TF=385p TR=49.0n EG=1.12 )\r
-\r
-*SRC=BC846BW;DI_BC846BW;BJTs NPN; Si;  65.0V  0.100A  300MHz   Diodes Inc\r
-BJTs\r
-.MODEL DI_BC846BW  NPN (IS=10.2f NF=1.00 BF=650 VAF=145\r
-+ IKF=39.5m ISE=2.93p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.105 RE=0.915 RB=3.66 RC=0.366\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 \r
-+ TF=385p TR=49.0n EG=1.12 )\r
-\r
-*SRC=BC846C;DI_BC846C;BJTs NPN; Si;  65.0V  0.100A  300MHz   Diodes Inc\r
-BJTs\r
-.MODEL DI_BC846C  NPN (IS=10.2f NF=1.00 BF=1.09k VAF=145\r
-+ IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 \r
-+ TF=427p TR=48.6n EG=1.12 )\r
-\r
-*SRC=BC846CW;DI_BC846CW;BJTs NPN; Si;  65.0V  0.100A  300MHz   Diodes Inc\r
-BJTs\r
-.MODEL DI_BC846CW  NPN (IS=10.2f NF=1.00 BF=1.09k VAF=145\r
-+ IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 \r
-+ TF=427p TR=48.6n EG=1.12 )\r
-\r
-*SRC=BC847A;DI_BC847A;BJTs NPN; Si;  45.0V  0.100A  300MHz   Diodes Inc\r
-BJTs\r
-.MODEL DI_BC847A  NPN (IS=10.2f NF=1.00 BF=301 VAF=121\r
-+ IKF=60.7m ISE=5.82p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 \r
-+ TF=427p TR=50.3n EG=1.12 )\r
-\r
-*SRC=BC847AT;DI_BC847AT;BJTs NPN; Si;  45.0V  0.100A  300MHz   Diodes Inc\r
-BJTs\r
-.MODEL DI_BC847AT  NPN (IS=9.98f NF=1.00 BF=301 VAF=121\r
-+ IKF=60.7m ISE=5.75p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300 \r
-+ TF=423p TR=50.3n EG=1.12 )\r
-\r
-*SRC=BC847AW;DI_BC847AW;BJTs NPN; Si;  45.0V  0.100A  300MHz   Diodes Inc\r
-BJTs\r
-.MODEL DI_BC847AW  NPN (IS=10.2f NF=1.00 BF=301 VAF=121\r
-+ IKF=60.7m ISE=5.82p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 \r
-+ TF=427p TR=50.3n EG=1.12 )\r
-\r
-*SRC=BC847B;DI_BC847B;BJTs NPN; Si;  45.0V  0.100A  300MHz   Diodes, Inc. transistor\r
-.MODEL DI_BC847B  NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121\r
-+ IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306\r
-+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300\r
-+ MJC=0.300 TF=520p TR=78.9n EG=1.12 )\r
-\r
-*SRC=BC847BS;DI_BC847BS;BJTs NPN; Si;  45.0V  0.100A  250MHz   Diodes Inc.\r
-BJTs\r
-.MODEL DI_BC847BS  NPN (IS=9.98f NF=1.00 BF=616 VAF=121\r
-+ IKF=60.7m ISE=2.81p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=4.33p VJC=0.300 MJC=0.300 \r
-+ TF=585p TR=49.1n EG=1.12 )\r
-\r
-*SRC=BC847BT;DI_BC847BT;BJTs NPN; Si;  45.0V  0.100A  300MHz   Diodes Inc\r
-BJTs\r
-.MODEL DI_BC847BT  NPN (IS=9.98f NF=1.00 BF=616 VAF=121\r
-+ IKF=60.7m ISE=2.81p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300 \r
-+ TF=423p TR=49.1n EG=1.12 )\r
-\r
-*SRC=BC847BV;DI_BC847BV;BJTs NPN; Si;  45.0V  0.100A  200MHz   Diodes Inc. BJTs - Single device of dual\r.MODEL DI_BC847BV  NPN (IS=10.2f NF=1.00 BF=616 VAF=121\r+ IKF=42.5m ISE=2.38p NE=2.00 BR=4.00 NR=1.00\r+ VAR=24.0 IKR=0.105 RE=0.915 RB=3.66 RC=0.366\r+ XTB=1.5 CJE=35.8p VJE=1.10 MJE=0.500 CJC=11.6p VJC=0.300\r+ MJC=0.300 TF=665p TR=120n EG=1.12 )\r
-\r
-*SRC=BC847BW;DI_BC847BW;BJTs NPN; Si;  45.0V  0.100A  300MHz   Diodes Inc\r
-BJTs\r
-.MODEL DI_BC847BW  NPN (IS=10.2f NF=1.00 BF=616 VAF=121\r
-+ IKF=60.7m ISE=2.84p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 \r
-+ TF=427p TR=49.1n EG=1.12 )\r
-\r
-*SRC=BC847C;DI_BC847C;BJTs NPN; Si;  45.0V  0.100A  300MHz   Diodes Inc\r
-BJTs\r
-.MODEL DI_BC847C  NPN (IS=10.3f NF=1.00 BF=1.09k VAF=121\r
-+ IKF=60.7m ISE=1.61p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.150 RE=0.965 RB=3.86 RC=0.386\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 \r
-+ TF=427p TR=48.6n EG=1.12 )\r
-\r
-*SRC=BC847CT;DI_BC847CT;BJTs NPN; Si;  45.0V  0.100A  300MHz   Diodes Inc\r
-BJTs\r
-.MODEL DI_BC847CT  NPN (IS=9.98f NF=1.00 BF=1.09k VAF=121\r
-+ IKF=60.7m ISE=1.58p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300 \r
-+ TF=423p TR=48.6n EG=1.12 )\r
-\r
-*SRC=BC847CW;DI_BC847CW;BJTs NPN; Si;  45.0V  0.100A  300MHz   Diodes Inc\r
-BJTs\r
-.MODEL DI_BC847CW  NPN (IS=10.2f NF=1.00 BF=1.09k VAF=121\r
-+ IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 \r
-+ TF=427p TR=48.6n EG=1.12 )\r
-\r
-*****************************************************************************************************************************************\r
-*SRC=BC847PN;DI_BC847PN_NPN;BJTs NPN; Si;  45.0V  0.100A  250MHz   Diodes Inc BJTs - Complementary\r
-.MODEL DI_BC847PN_NPN  NPN (IS=9.98f NF=1.00 BF=616 VAF=121\r
-+ IKF=60.7m ISE=2.81p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=4.33p VJC=0.300\r
-+ MJC=0.300 TF=585p TR=49.1n EG=1.12 )\r
-\r
-*SRC=BC847PN;DI_BC847PN_PNP;BJTs PNP; Si;  45.0V  0.100A  250MHz   Diodes Inc. BJTs - Complementary\r
-.MODEL DI_BC847PN_PNP  PNP (IS=10.2f NF=1.00 BF=650 VAF=121\r
-+ IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286\r
-+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300\r
-+ MJC=0.300 TF=586p TR=95.9n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-*SRC=BC848A;DI_BC848A;BJTs NPN; Si;  30.0V  0.100A  300MHz   Diodes Inc\r
-BJTs\r
-.MODEL DI_BC848A  NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6\r
-+ IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 \r
-+ TF=427p TR=48.6n EG=1.12 )\r
-\r
-*SRC=BC848AW;DI_BC848AW;BJTs NPN; Si;  30.0V  0.100A  300MHz   Diodes Inc\r
-BJTs\r
-.MODEL DI_BC848AW  NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6\r
-+ IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 \r
-+ TF=427p TR=48.6n EG=1.12 )\r
-\r
-*SRC=BC848B;DI_BC848B;BJTs NPN; Si;  30.0V  0.100A  300MHz   Diodes Inc\r
-BJTs\r
-.MODEL DI_BC848B  NPN (IS=10.2f NF=1.00 BF=616 VAF=98.6\r
-+ IKF=60.7m ISE=2.84p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 \r
-+ TF=427p TR=49.1n EG=1.12 )\r
-\r
-*SRC=BC848BW;DI_BC848BW;BJTs NPN; Si;  30.0V  0.100A  300MHz   Diodes Inc\r
-BJTs\r
-.MODEL DI_BC848BW  NPN (IS=10.2f NF=1.00 BF=616 VAF=98.6\r
-+ IKF=60.7m ISE=2.84p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 \r
-+ TF=427p TR=49.1n EG=1.12 )\r
-\r
-*SRC=BC848C;DI_BC848C;BJTs NPN; Si;  30.0V  0.100A  300MHz   Diodes Inc\r
-BJTs\r
-.MODEL DI_BC848C  NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6\r
-+ IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 \r
-+ TF=427p TR=48.6n EG=1.12 )\r
-\r
-*SRC=BC848CW;DI_BC848CW;BJTs NPN; Si;  30.0V  0.100A  300MHz   Diodes Inc\r
-BJTs\r
-.MODEL DI_BC848CW  NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6\r
-+ IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 \r
-+ TF=427p TR=48.6n EG=1.12 )\r
-\r
-*SRC=BC856A;DI_BC856A;BJTs PNP; Si;  65.0V  0.100A  250MHz   Diodes Inc. BJTs\r\r
-.MODEL DI_BC856A  PNP (IS=10.2f NF=1.00 BF=342 VAF=145\r\r
-+ IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286\r\r
-+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300\r\r
-+ MJC=0.300 TF=581p TR=97.8n EG=1.12 )\r
-\r
-*SRC=BC856AW;DI_BC856AW;BJTs PNP; Si;  65.0V  0.100A  250MHz   Diodes Inc. BJTs\r\r
-.MODEL DI_BC856AW  PNP (IS=10.2f NF=1.00 BF=342 VAF=145\r\r
-+ IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286\r\r
-+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300\r\r
-+ MJC=0.300 TF=581p TR=97.8n EG=1.12 )\r
-\r
-*SRC=BC856B;DI_BC856B;BJTs PNP; Si;  80.0V  0.200A  257MHz   Diodes Inc. Transistor \r
-.MODEL DI_BC856B  PNP (IS=3.90f NF=1.00 BF=408 VAF=161 \r
-+ IKF=91.1m ISE=3.25p NE=2.00 BR=4.00 NR=1.00 \r
-+ VAR=20.0 IKR=0.225 RE=0.782 RB=3.13 RC=0.313 \r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 \r
-+ MJC=0.300 TF=548p TR=94.5n EG=1.12 )\r
-\r
-*SRC=BC856BW;DI_BC856BW;BJTs PNP; Si;  80.0V  0.200A  257MHz   Diodes Inc. Transistor\r
-.MODEL DI_BC856BW  PNP (IS=3.90f NF=1.00 BF=408 VAF=161\r
-+ IKF=91.1m ISE=3.25p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.225 RE=0.782 RB=3.13 RC=0.313\r
-+ XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300\r
-+ MJC=0.300 TF=548p TR=94.5n EG=1.12 )\r
-\r
-*SRC=BC857A;DI_BC857A;BJTs PNP; Si;  45.0V  0.100A  250MHz   Diodes Inc. BJTs\r\r
-.MODEL DI_BC857A  PNP (IS=10.2f NF=1.00 BF=342 VAF=121\r\r
-+ IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286\r\r
-+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300\r\r
-+ MJC=0.300 TF=581p TR=97.8n EG=1.12 )\r
-\r
-*SRC=BC857AT;DI_BC857AT;BJTs PNP; Si;  45.0V  0.100A  250MHz   Diodes Inc. BJTs\r\r
-.MODEL DI_BC857AT  PNP (IS=10.2f NF=1.00 BF=342 VAF=121\r\r
-+ IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286\r\r
-+ XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300\r\r
-+ MJC=0.300 TF=488p TR=97.8n EG=1.12 )\r
-\r
-*SRC=BC857AW;DI_BC857AW;BJTs PNP; Si;  45.0V  0.100A  250MHz   Diodes Inc. BJTs\r\r
-.MODEL DI_BC857AW  PNP (IS=10.2f NF=1.00 BF=342 VAF=121\r\r
-+ IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286\r\r
-+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300\r\r
-+ MJC=0.300 TF=581p TR=97.8n EG=1.12 )\r
-\r
-*SRC=BC857B;DI_BC857B;BJTs PNP; Si;  45.0V  0.100A  200MHz   Diodes, Inc. transistor\r
-.MODEL DI_BC857B  PNP (IS=5.51f NF=1.00 BF=424 VAF=121\r
-+ IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306\r
-+ XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300\r
-+ MJC=0.300 TF=700p TR=121n EG=1.12 )\r
-\r
-*SRC=BC857BS;DI_BC857BS;BJTs PNP; Si;  45.0V  0.100A  250MHz   Diodes Inc.\r
-BJTs - Single device of dual\r
-.MODEL DI_BC857BS  PNP (IS=10.2f NF=1.00 BF=650 VAF=121\r
-+ IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286\r
-+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 MJC=0.300 \r
-+ TF=586p TR=95.9n EG=1.12 )\r
-\r
-*SRC=BC857BT;DI_BC857BT;BJTs PNP; Si;  45.0V  0.100A  200MHz   Diodes, Inc. transistor\r
-.MODEL DI_BC857B  PNP (IS=5.51f NF=1.00 BF=424 VAF=121\r
-+ IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306\r
-+ XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300\r
-+ MJC=0.300 TF=700p TR=121n EG=1.12 )\r
-\r
-*SRC=BC857BV;DI_BC857BV;BJTs PNP; Si;  45.0V  0.100A  250MHz   Diodes Inc. BJTs\r\r
-.MODEL DI_BC857BV  PNP (IS=10.2f NF=1.00 BF=650 VAF=121\r\r
-+ IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286\r\r
-+ XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300\r\r
-+ MJC=0.300 TF=499p TR=95.9n EG=1.12 )=499p TR=95.9n EG=1.12 )\r
-\r
-*SRC=BC857BW;DI_BC857BW;BJTs PNP; Si;  45.0V  0.100A  200MHz   Diodes, Inc. transistor\r\r
-.MODEL DI_BC857BW  PNP (IS=5.51f NF=1.00 BF=424 VAF=121\r\r
-+ IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306\r\r
-+ XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300\r\r
-+ MJC=0.300 TF=700p TR=121n EG=1.12 )\r
-\r
-*SRC=BC857C;DI_BC857C;BJTs PNP; Si;  45.0V  0.100A  250MHz   Diodes Inc. BJTs\r\r
-.MODEL DI_BC857C  PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121\r\r
-+ IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286\r\r
-+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300\r\r
-+ MJC=0.300 TF=587p TR=95.0n EG=1.12 )\r
-\r
-*SRC=BC857CT;DI_BC857CT;BJTs PNP; Si;  45.0V  0.100A  250MHz   Diodes Inc. BJTs\r\r
-.MODEL DI_BC857CT  PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121\r\r
-+ IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286\r\r
-+ XTB=1.5 CJE=30.8p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300\r\r
-+ MJC=0.300 TF=526p TR=95.0n EG=1.12 )\r
-\r
-*SRC=BC857CW;DI_BC857CW;BJTs PNP; Si;  45.0V  0.100A  250MHz   Diodes Inc. BJTs\r\r
-.MODEL DI_BC857CW  PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121\r\r
-+ IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286\r\r
-+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300\r\r
-+ MJC=0.300 TF=587p TR=95.0n EG=1.12 )\r
-\r
-*SRC=BC858A;DIBC858A;BJTs PNP; Si;  30.0V  0.100A  250MHz   Diodes Inc. BJTs\r\r
-.MODEL DIBC858A  PNP (IS=10.2f NF=1.00 BF=342 VAF=98.6\r\r
-+ IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286\r\r
-+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300\r\r
-+ MJC=0.300 TF=581p TR=97.8n EG=1.12 )\r
-\r
-*SRC=BC858AW;DI_BC858AW;BJTs PNP; Si;  30.0V  0.100A  250MHz   Diodes Inc. BJTs\r\r
-.MODEL DI_BC858AW  PNP (IS=10.2f NF=1.00 BF=342 VAF=98.6\r\r
-+ IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286\r\r
-+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300\r\r
-+ MJC=0.300 TF=581p TR=97.8n EG=1.12 )\r
-\r
-*SRC=BC858B;DI_BC858B;BJTs PNP; Si;  30.0V  0.100A  250MHz   Diodes Inc. BJTs\r\r
-.MODEL DI_BC858B  PNP (IS=10.2f NF=1.00 BF=650 VAF=98.6\r\r
-+ IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286\r\r
-+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300\r\r
-+ MJC=0.300 TF=586p TR=95.9n EG=1.12 )\r
-\r
-*SRC=BC858BW;DI_BC858BW;BJTs PNP; Si;  30.0V  0.100A  200MHz   Diodes, Inc. transistor\r
-.MODEL DI_BC858BW  PNP (IS=5.51f NF=1.00 BF=424 VAF=98.6\r
-+ IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306\r
-+ XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300\r
-+ MJC=0.300 TF=700p TR=121n EG=1.12 )\r
-\r
-*SRC=BC858C;DI_BC858C;BJTs PNP; Si;  30.0V  0.100A  250MHz   Diodes Inc. BJTs\r\r
-.MODEL DI_BC858C  PNP (IS=10.2f NF=1.00 BF=1.09k VAF=98.6\r\r
-+ IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286\r\r
-+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300\r\r
-+ MJC=0.300 TF=587p TR=95.0n EG=1.12 )\r
-\r
-*SRC=BC858CW;DI_BC858CW;BJTs PNP; Si;  30.0V  0.100A  250MHz   Diodes Inc. BJTs\r\r
-.MODEL DI_BC858CW  PNP (IS=10.2f NF=1.00 BF=1.09k VAF=98.6\r\r
-+ IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286\r\r
-+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300\r\r
-+ MJC=0.300 TF=587p TR=95.0n EG=1.12 )\r
-\r
-*SRC=DMMT3904W;DI_DMMT3904W;BJTs NPN; Si;  40.0V  0.200A  347MHz   Diodes\r
-Inc. Matched Transistor\r
-.MODEL DI_DMMT3904W  NPN (IS=20.3f NF=1.00 BF=274 VAF=114\r
-+ IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=90.0m RE=0.657 RB=2.63 RC=0.263\r
-+ XTB=1.5 CJE=8.29p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300\r
-+ MJC=0.300 TF=426p TR=71.3n EG=1.12 )\r
-\r
-*****************************************************************************************************************************************\r
-*SRC=DMMT3906;DI_DMMT3906;BJTs PNP; Si;  40.0V  0.200A  257MHz   Diodes Inc. Matched BJTs - Single device of dual\r
-.MODEL DI_DMMT3906  PNP (IS=20.3f NF=1.00 BF=437 VAF=114\r
-+ IKF=44.6m ISE=6.81p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.120 RE=1.16 RB=4.63 RC=0.463\r
-+ XTB=1.5 CJE=23.5p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300\r
-+ MJC=0.300 TF=504p TR=94.3n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-*SRC=DMMT3906W;DI_DMMT3906W;BJTs PNP; Si;  40.0V  0.200A  257MHz   Diodes, Inc. PNP \r
-.MODEL DI_DMMT3906W  PNP (IS=20.3f NF=1.00 BF=274 VAF=114 \r
-+ IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00 \r
-+ VAR=20.0 IKR=90.0m RE=1.01 RB=4.03 RC=0.403 \r
-+ XTB=1.5 CJE=12.1p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 \r
-+ MJC=0.300 TF=531p TR=85.6n EG=1.12 )\r
-\r
-*SRC=DMMT5551;DI_DMMT5551;BJTs NPN; Si;  160V  0.200A  150MHz   Diodes Inc.  Matched BJTs - Single device of dual\r\r
-.MODEL DI_DMMT5551  NPN (IS=15.4f NF=1.00 BF=342 VAF=228\r\r
-+ IKF=42.5m ISE=5.27p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=24.0 IKR=0.105 RE=0.257 RB=1.03 RC=0.103\r\r
-+ XTB=1.5 CJE=52.0p VJE=1.10 MJE=0.500 CJC=16.8p VJC=0.300\r\r
-+ MJC=0.300 TF=873p TR=163n EG=1.12 )\r
-\r
-*SRC=IMT4;DI_IMT4;BJTs PNP; Si;  120V  50.0mA  200MHz   Diodes Inc.\r
-Transistor\r
-.MODEL DI_IMT4  PNP (IS=12.8f NF=1.00 BF=513 VAF=197\r
-+ IKF=30.4m ISE=2.70p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=75.0m RE=1.43 RB=5.72 RC=0.572\r
-+ XTB=1.5 CJE=19.1p VJE=1.10 MJE=0.500 CJC=6.15p VJC=0.300\r
-+ MJC=0.300 TF=710p TR=121n EG=1.12 )\r
-\r
-*SRC=IMX8;DI_IMX8;BJTs NPN; Si;  120V  50.0mA  300MHz   Diodes Inc.\r
-Transistor\r
-.MODEL DI_IMX8  NPN (IS=14.6f NF=1.00 BF=581 VAF=197\r
-+ IKF=30.4m ISE=2.54p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=75.0m RE=0.830 RB=3.32 RC=0.332\r
-+ XTB=1.5 CJE=12.5p VJE=1.10 MJE=0.500 CJC=4.02p VJC=0.300\r
-+ MJC=0.300 TF=475p TR=80.1n EG=1.12 )\r
-\r
-*SRC=MMBT123S;DI_MMBT123S;BJTs NPN; Si;  18.0V  1.00A  100MHz   Diodes Inc.\r
-BJTs\r
-.MODEL DI_MMBT123S  NPN (IS=102f NF=1.00 BF=1.09k VAF=76.4\r
-+ IKF=0.425 ISE=13.4p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=1.05 RE=0.181 RB=0.726 RC=72.6m\r
-+ XTB=1.5 CJE=71.7p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 MJC=0.300 \r
-+ TF=1.55n TR=238n EG=1.12 )\r
-\r
-*SRC=MMBT2222A;DI_MMBT2222A;BJTs NPN; Si;  40.0V  0.600A  200MHz   Diodes Inc. Transistor \r
-.MODEL DI_MMBT2222A  NPN (IS=25.4f NF=1.00 BF=274 VAF=114 \r
-+ IKF=0.121 ISE=14.3p NE=2.00 BR=4.00 NR=1.00 \r
-+ VAR=24.0 IKR=0.300 RE=0.219 RB=0.877 RC=87.7m \r
-+ XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 \r
-+ MJC=0.300 TF=622p TR=124n EG=1.12 )\r
-\r
-*SRC=MMBT2222AT;DI_MMBT2222AT;BJTs NPN; Si;  40.0V  0.600A  300MHz   Diodes\r
-Inc. BJTs\r
-.MODEL DI_MMBT2222AT  NPN (IS=60.4f NF=1.00 BF=301 VAF=114\r
-+ IKF=66.8m ISE=14.8p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.165 RE=0.261 RB=1.04 RC=0.104\r
-+ XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 MJC=0.300 \r
-+ TF=491p TR=82.1n EG=1.12 )\r
-\r
-*SRC=MMBT2907A;DI_MMBT2907A;BJTs PNP; Si;  60.0V  0.600A  200MHz   Diodes Inc. Transistor \r
-.MODEL DI_MMBT2907A  PNP (IS=60.7f NF=1.00 BF=312 VAF=139 \r
-+ IKF=0.219 ISE=26.0p NE=2.00 BR=4.00 NR=1.00 \r
-+ VAR=20.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m \r
-+ XTB=1.5 CJE=50.4p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 \r
-+ MJC=0.300 TF=758p TR=123n EG=1.12 )\r
-\r
-*SRC=MMBT2907AT;DI_MMBT2907AT;BJTs PNP; Si;  60.0V  0.500A  300MHz   Diodes Inc. BJTs \r.MODEL DI_MMBT2907AT  PNP (IS=50.0f NF=1.00 BF=410 VAF=139\r+ IKF=0.182 ISE=16.4p NE=2.00 BR=4.00 NR=1.00\r+ VAR=20.0 IKR=0.450 RE=0.343 RB=1.37 RC=0.137\r+ XTB=1.5 CJE=34.9p VJE=1.10 MJE=0.500 CJC=14.7p VJC=0.300\r+ MJC=0.300 TF=484p TR=29.9n EG=1.12 )\r
-\r
-*SRC=MMBT3904;DI_MMBT3904;BJTs NPN; Si;  40.0V  0.200A  347MHz   Diodes Inc. NPN Transistor\r
-.MODEL DI_MMBT3904  NPN (IS=48.3f NF=1.00 BF=410 VAF=114\r
-+ IKF=0.121 ISE=13.1p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.300 RE=2.63 RB=10.5 RC=1.05\r
-+ XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=8.70p VJC=0.300\r
-+ MJC=0.300 TF=440p TR=74.7n EG=1.12 )\r
-\r
-*SRC=MMBT3904T;DI_MMBT3904T;BJTs NPN; Si;  40.0V  0.200A  347MHz   Diodes\r
-Inc. BJTs\r
-.MODEL DI_MMBT3904T  NPN (IS=20.2f NF=1.00 BF=410 VAF=114\r
-+ IKF=30.4m ISE=4.25p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283\r
-+ XTB=1.5 CJE=8.92p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300 \r
-+ TF=383p TR=69.9n EG=1.12 )\r
-\r
-*SRC=MMBT3906;DI_MMBT3906;BJTs PNP; Si;  40.0V  0.200A  257MHz   Diodes Inc. Transistor\r
-.MODEL DI_MMBT3906  PNP (IS=20.3f NF=1.00 BF=192 VAF=114\r
-+ IKF=60.7m ISE=12.9p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.150 RE=1.16 RB=4.63 RC=0.463\r
-+ XTB=1.5 CJE=7.60p VJE=1.10 MJE=0.500 CJC=6.52p VJC=0.300\r
-+ MJC=0.300 TF=589p TR=98.4n EG=1.12 )\r
-\r
-*SRC=MMBT3906T;DI_MMBT3906T;BJTs PNP; Si;  40.0V  0.200A  257MHz   Didoes\r
-Inc. BJTs\r
-.MODEL DI_MMBT3906T  NPN (IS=7.21e-016 NF=1.00 BF=410 VAF=114\r
-+ IKF=60.7m ISE=1.13p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.150 RE=1.21 RB=4.83 RC=0.483\r
-+ XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=6.63p VJC=0.300 MJC=0.300 \r
-+ TF=571p TR=84.1n EG=1.12 )\r
-\r
-*SRC=MMBT4124;DI_MMBT4124;BJTs NPN; Si;  30.0V  0.200A  347MHz   Diodes Inc. NPN Transistor \r\r
-.MODEL DI_MMBT4124  NPN (IS=20.7f NF=1.00 BF=492 VAF=98.6 \r\r
-+ IKF=72.9m ISE=5.54p NE=2.00 BR=4.00 NR=1.00 \r\r
-+ VAR=20.0 IKR=0.180 RE=2.63 RB=10.5 RC=1.05 \r\r
-+ XTB=1.5 CJE=9.65p VJE=1.10 MJE=0.500 CJC=9.47p VJC=0.300 \r\r
-+ MJC=0.300 TF=415p TR=69.8n EG=1.12 ) \r\r
-\r\r
-*SRC=MMBT4126;DI_MMBT4126;BJTs PNP; Si;  25.0V  0.200A  257MHz   Diodes Inc. Transistor \r\r
-.MODEL DI_MMBT4126  PNP (IS=20.3f NF=1.00 BF=598 VAF=90.0 \r\r
-+ IKF=72.9m ISE=4.52p NE=2.00 BR=4.00 NR=1.00 \r\r
-+ VAR=16.0 IKR=0.180 RE=0.257 RB=1.03 RC=0.103 \r\r
-+ XTB=1.5 CJE=13.8p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 \r\r
-+ MJC=0.300 TF=569p TR=93.4n EG=1.12 )\r
-\r
-*SRC=MMBT4126;DI_MMBT4126;BJTs PNP; Si;  25.0V  0.200A  257MHz   Diodes Inc. Transistor \r
-.MODEL DI_MMBT4126  PNP (IS=20.3f NF=1.00 BF=598 VAF=90.0 \r
-+ IKF=72.9m ISE=4.52p NE=2.00 BR=4.00 NR=1.00 \r
-+ VAR=16.0 IKR=0.180 RE=0.257 RB=1.03 RC=0.103 \r
-+ XTB=1.5 CJE=13.8p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 \r
-+ MJC=0.300 TF=569p TR=93.4n EG=1.12 )\r
-\r
-*SRC=MMBT4401;DI_MMBT4401;BJTs NPN; Si;  40.0V  0.600A  200MHz   Diodes, Inc. transistor\r
-.MODEL DI_MMBT4401  NPN (IS=60.9f NF=1.00 BF=410 VAF=114\r
-+ IKF=0.364 ISE=25.5p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.900 RE=0.713 RB=2.85 RC=0.285\r
-+ XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300\r
-+ MJC=0.300 TF=717p TR=121n EG=1.12 )\r
-\r
-*SRC=MMBT4401T;DI_MMBT4401T;BJTs NPN; Si;  40.0V  0.600A  275MHz   Diodes\r
-Inc. BJTs\r
-.MODEL DI_MMBT4401T  NPN (IS=1.27p NF=1.00 BF=410 VAF=114\r
-+ IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104\r
-+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 MJC=0.300 \r
-+ TF=533p TR=84.1n EG=1.12 )\r
-\r
-*SRC=MMBT4403;DI_MMBT4403;BJTs PNP; Si;  40.0V  0.600A  300MHz   Diodes Inc. Transistor \r
-.MODEL DI_MMBT4403  PNP (IS=26.9f NF=1.00 BF=274 VAF=114 \r
-+ IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 \r
-+ VAR=20.0 IKR=0.750 RE=0.263 RB=1.05 RC=0.105 \r
-+ XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=24.6p VJC=0.300 \r
-+ MJC=0.300 TF=500p TR=82.4n EG=1.12 )\r
-\r
-*****************************************************************************************************************************************\r
-*SRC=MMBT4403T;DI_MMBT4403T;BJTs PNP; Si;  40.0V  0.600A  200MHz   Diodes Inc. BJTs\r
-.MODEL DI_MMBT4403T  PNP (IS=60.4f NF=1.00 BF=410 VAF=114\r
-+ IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104\r
-+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300\r
-+ MJC=0.300 TF=667p TR=84.1n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-*SRC=MMBT5401;DI_MMBT5401;BJTs PNP; Si;  150V  0.200A  300MHz   Diodes Inc.\r
-Transistor\r
-.MODEL DI_MMBT5401  PNP (IS=20.3f NF=1.00 BF=328 VAF=220\r
-+ IKF=72.9m ISE=8.24p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.180 RE=0.257 RB=1.03 RC=0.103\r
-+ XTB=1.5 CJE=54.3p VJE=1.10 MJE=0.500 CJC=17.5p VJC=0.300\r
-+ MJC=0.300 TF=315p TR=81.7n EG=1.12 )\r
-\r
-*SRC=MMBT5551;DI_MMBT5551;BJTs NPN; Si;  160V  0.200A  130MHz   Diodes Inc.\r
-Transistor\r
-.MODEL DI_MMBT5551  NPN (IS=20.2f NF=1.00 BF=219 VAF=228\r
-+ IKF=36.4m ISE=8.72p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=90.0m RE=0.257 RB=1.03 RC=0.103\r
-+ XTB=1.5 CJE=27.9p VJE=1.10 MJE=0.500 CJC=8.99p VJC=0.300 MJC=0.300 \r
-+ TF=1.13n TR=193n EG=1.12 )\r
-\r
-*SRC=MMBTA05;DI_MMBTA05;BJTs NPN; Si;  60.0V  0.500A  219MHz   Diodes Inc.\r
-BJTs\r
-.MODEL DI_MMBTA05  NPN (IS=51.3f NF=1.00 BF=547 VAF=139\r
-+ IKF=0.146 ISE=11.1p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=16.0 IKR=0.360 RE=0.223 RB=0.892 RC=89.2m\r
-+ XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 MJC=0.300 \r
-+ TF=631p TR=110n EG=1.12 )\r
-\r
-*SRC=MMBTA06;DI_MMBTA06;BJTs NPN; Si;  80.0V  0.500A  219MHz   Diodes Inc. Transistor \r
-.MODEL DI_MMBTA06  NPN (IS=50.8f NF=1.00 BF=479 VAF=161 \r
-+ IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00 \r
-+ VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m \r
-+ XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 \r
-+ MJC=0.300 TF=576p TR=110n EG=1.12 )\r
-\r
-*SRC=MMBTA42;DI_MMBTA42;BJTs NPN; Si;  300V  0.500A  219MHz   Diodes Inc. NPN Transistor \r
-.MODEL DI_MMBTA42  NPN (IS=51.0f NF=1.00 BF=194 VAF=312 \r
-+ IKF=0.182 ISE=34.9p NE=2.00 BR=4.00 NR=1.00 \r
-+ VAR=24.0 IKR=0.450 RE=11.6 RB=46.3 RC=4.63 \r
-+ XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 \r
-+ MJC=0.300 TF=481p TR=115n EG=1.12 )\r
-\r
-*SRC=MMBTA55;DI_MMBTA55;BJTs PNP; Si;  60.0V  0.500A  163MHz   Diodes Inc. Transistor \r
-.MODEL DI_MMBTA55  PNP (IS=50.8f NF=1.00 BF=479 VAF=139 \r
-+ IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00 \r
-+ VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m \r
-+ XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 \r
-+ MJC=0.300 TF=660p TR=149n EG=1.12 )\r
-\r
-*SRC=MMBTA56;DI_MMBTA56;BJTs PNP; Si;  80.0V  0.500A  163MHz   Diodes Inc.\r
-Transistor\r
-.MODEL DI_MMBTA56  PNP (IS=50.8f NF=1.00 BF=479 VAF=161\r
-+ IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m\r
-+ XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300\r
-+ MJC=0.300 TF=660p TR=149n EG=1.12 )\r
-\r
-*SRC=MMBTA92;DI_MMBTA92;BJTs PNP; Si;  300V  0.500A  60.0MHz   Diodes Inc.\r
-Transistor\r
-.MODEL DI_MMBTA92  PNP (IS=177f NF=1.00 BF=239 VAF=312\r
-+ IKF=72.9m ISE=33.4p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.180 RE=1.16 RB=4.63 RC=0.463\r
-+ XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 MJC=0.300 \r
-+ TF=2.18n TR=415n EG=1.12 )\r
-\r
-*SRC=MMBTH10;DI_MMBTH10;BJTs NPN; Si;  25.0V  50.0mA  1.00kMHz   Diodes Inc. Transistor \r
-.MODEL DI_MMBTH10  NPN (IS=1.26e-016 NF=1.00 BF=95.8 VAF=90.0 \r
-+ IKF=24.3m ISE=1.28p NE=2.00 BR=4.00 NR=1.00 \r
-+ VAR=12.0 IKR=60.0m RE=1.51 RB=6.05 RC=0.605 \r
-+ XTB=1.5 CJE=6.27p VJE=1.10 MJE=0.500 CJC=2.02p VJC=0.300 \r
-+ MJC=0.300 TF=130p TR=27.4n EG=1.12 )\r
-\r
-*SRC=MMBTH24;DI_MMBTH24;BJTs NPN; Si;  40.0V  50.0mA  1.00kMHz   Diodes Inc. Transistor \r
-.MODEL DI_MMBTH24  NPN (IS=1.26e-016 NF=1.00 BF=95.8 VAF=114 \r
-+ IKF=24.3m ISE=1.28p NE=2.00 BR=4.00 NR=1.00 \r
-+ VAR=16.0 IKR=60.0m RE=1.51 RB=6.05 RC=0.605 \r
-+ XTB=1.5 CJE=6.27p VJE=1.10 MJE=0.500 CJC=2.02p VJC=0.300 \r
-+ MJC=0.300 TF=130p TR=27.4n EG=1.12 )\r
-\r
-F=496p TR=81.1n EG=1.12 )\r
-\r
-*****************************************************************************************************************************************\r
-*SRC=MMDT2227;DI_MMDT2227_NPN;BJTs NPN; Si;  40.0V  0.600A  300MHz   Diodes Inc. BJTs - Complementary\r
-.MODEL DI_MMDT2227_NPN  NPN (IS=61.0f NF=1.00 BF=410 VAF=114\r
-+ IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108\r
-+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300\r
-+ MJC=0.300 TF=496p TR=81.1n EG=1.12 )\r
-\r
-*SRC=MMDT2227;DI_MMDT2227_PNP;BJTs PNP; Si;  60.0V  0.600A  300MHz   Diodes Inc. BJTs - Complementary\r
-.MODEL DI_MMDT2227_PNP  PNP (IS=61.2f NF=1.00 BF=410 VAF=139\r
-+ IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144\r
-+ XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300\r
-+ MJC=0.300 TF=491p TR=81.1n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-*****************************************************************************************************************************************\r
-*SRC=MMDT2907A;DI_MMDT2907A;BJTs PNP; Si;  60.0V  0.600A  300MHz   Diodes Inc. BJTs - Single device of  dual\r
-.MODEL DI_MMDT2907A  PNP (IS=61.2f NF=1.00 BF=410 VAF=139\r
-+ IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144\r
-+ XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300\r
-+ MJC=0.300 TF=491p TR=81.1n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-*SRC=MMDT3904;DI_MMDT3904;BJTs NPN; Si;  40.0V  0.200A  347MHz   Diodes\r
-Inc. BJTs - Single device of dual\r
-.MODEL DI_MMDT3904  NPN (IS=5.81e-016 NF=1.00 BF=410 VAF=114\r
-+ IKF=0.304 ISE=2.28p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.750 RE=0.707 RB=2.83 RC=0.283\r
-+ XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=6.86p VJC=0.300 MJC=0.300 \r
-+ TF=450p TR=70.2n EG=1.12 )\r
-\r
-*SRC=MMDT3906;DI_MMDT3906;BJTs PNP; Si;  40.0V  0.200A  257MHz   Diodes\r
-Inc. BJTs - Single device of dual\r
-.MODEL DI_MMDT3906  PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114\r
-+ IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483\r
-+ XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300 MJC=0.300 \r
-+ TF=558p TR=84.1n EG=1.12 )\r
-\r
-*****************************************************************************************************************************************\r
-*SRC=MMDT3946;DI_MMDT3946_NPN;BJTs NPN; Si;  40.0V  0.200A  347MHz   Diodes Inc. BJTs - Complementary\r
-.MODEL DI_MMDT3946_NPN  NPN (IS=5.81e-016 NF=1.00 BF=410 VAF=114\r
-+ IKF=0.304 ISE=2.28p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.750 RE=0.707 RB=2.83 RC=0.283\r
-+ XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=6.86p VJC=0.300\r
-+ MJC=0.300 TF=450p TR=70.2n EG=1.12 )\r
-\r
-*SRC=MMDT3946;DI_MMDT3946_PNP;BJTs PNP; Si;  40.0V  0.200A  257MHz   Diodes Inc. BJTs - Complementary\r
-.MODEL DI_MMDT3946_PNP  PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114\r
-+ IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483\r
-+ XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300\r
-+ MJC=0.300 TF=558p TR=84.1n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-*SRC=MMDT4124;DI_MMDT4124;BJTs NPN; Si;  25.0V  0.200A  347MHz   Diodes\r
-Inc. BTJs - Single device of dual\r
-.MODEL DI_MMDT4124  NPN (IS=5.81e-016 NF=1.00 BF=492 VAF=90.0\r
-+ IKF=30.4m ISE=600f NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283\r
-+ XTB=1.5 CJE=7.96p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300 \r
-+ TF=386p TR=69.8n EG=1.12 )\r
-\r
-*SRC=MMDT4126;DI_MMDT4126;BJTs PNP; Si;  25.0V  0.200A  257MHz   Diodes\r
-Inc. BTJs - Single device of dual\r
-.MODEL DI_MMDT4126  PNP (IS=7.06e-016 NF=1.00 BF=492 VAF=90.0\r
-+ IKF=60.7m ISE=935f NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=16.0 IKR=0.150 RE=1.16 RB=4.63 RC=0.463\r
-+ XTB=1.5 CJE=7.24p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300 \r
-+ TF=585p TR=94.0n EG=1.12 )\r
-\r
-*SRC=MMBT4124;DI_MMBT4124;BJTs NPN; Si;  30.0V  0.200A  347MHz   Diodes Inc. NPN Transistor \r
-.MODEL DI_MMBT4124  NPN (IS=20.7f NF=1.00 BF=492 VAF=98.6 \r
-+ IKF=72.9m ISE=5.54p NE=2.00 BR=4.00 NR=1.00 \r
-+ VAR=20.0 IKR=0.180 RE=2.63 RB=10.5 RC=1.05 \r
-+ XTB=1.5 CJE=9.65p VJE=1.10 MJE=0.500 CJC=9.47p VJC=0.300 \r
-+ MJC=0.300 TF=415p TR=69.8n EG=1.12 ) \r
-\r
-*SRC=MMBT4126;DI_MMBT4126;BJTs PNP; Si;  25.0V  0.200A  257MHz   Diodes Inc. Transistor \r
-.MODEL DI_MMBT4126  PNP (IS=20.3f NF=1.00 BF=598 VAF=90.0 \r
-+ IKF=72.9m ISE=4.52p NE=2.00 BR=4.00 NR=1.00 \r
-+ VAR=16.0 IKR=0.180 RE=0.257 RB=1.03 RC=0.103 \r
-+ XTB=1.5 CJE=13.8p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 \r
-+ MJC=0.300 TF=569p TR=93.4n EG=1.12 )\r
-\r
-*SRC=MMDT4401;DI_MMDT4401;BJTs NPN; Si;  40.0V  0.600A  275MHz   Diodes\r
-Inc. BJTs - Single device of dual\r
-.MODEL DI_MMDT4401  NPN (IS=60.7f NF=1.00 BF=410 VAF=114\r
-+ IKF=0.219 ISE=19.7p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m\r
-+ XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 MJC=0.300 \r
-+ TF=539p TR=84.1n EG=1.12 )\r
-\r
-*SRC=MMDT4403;DI_MMDT4403;BJTs PNP; Si;  40.0V  0.600A  275MHz   Diodes\r
-Inc. BJTs - Single device of dual\r
-.MODEL DI_MMDT4403  PNP (IS=61.0f NF=1.00 BF=410 VAF=114\r
-+ IKF=0.340 ISE=24.7p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.269 RB=1.08 RC=0.108\r
-+ XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 MJC=0.300 \r
-+ TF=516p TR=84.1n EG=1.12 )\r
-\r
-*****************************************************************************************************************************************\r
-*SRC=MMDT4413;DI_MMDT4413_NPN;BJTs NPN; Si;  40.0V  0.600A  275MHz   Diodes Inc. BJTs - Complementaryl\r
-.MODEL DI_MMDT4413_NPN  NPN (IS=60.7f NF=1.00 BF=410 VAF=114\r
-+ IKF=0.219 ISE=19.7p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m\r
-+ XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300\r
-+ MJC=0.300 TF=539p TR=84.1n EG=1.12 )\r
-\r
-*SRC=MMDT4413;DI_MMDT4413_PNP;BJTs PNP; Si;  40.0V  0.600A  275MHz   Diodes Inc. BJTs - Complementary\r
-.MODEL DI_MMDT4413_PNP  PNP (IS=61.0f NF=1.00 BF=410 VAF=114\r
-+ IKF=0.340 ISE=24.7p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.269 RB=1.08 RC=0.108\r
-+ XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300\r
-+ MJC=0.300 TF=516p TR=84.1n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-*SRC=MMDT5401;DI_MMDT5401;BJTs PNP; Si;  150V  0.200A  257MHz   Diodes Inc. BJTs - Single device of dual\r\r
-.MODEL DI_MMDT5401  PNP (IS=6.83f NF=1.00 BF=328 VAF=220\r\r
-+ IKF=72.9m ISE=4.78p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=20.0 IKR=0.180 RE=0.157 RB=0.630 RC=63.0m\r\r
-+ XTB=1.5 CJE=52.0p VJE=1.10 MJE=0.500 CJC=16.8p VJC=0.300\r\r
-+ MJC=0.300 TF=450p TR=95.4n EG=1.12 )\r
-\r
-*SRC=MMDT5551;DI_MMDT5551;BJTs NPN; Si;  160V  0.200A  130MHz   Diodes Inc.\r
-Transistor - single device of dual\r
-.MODEL DI_MMDT5551  NPN (IS=20.2f NF=1.00 BF=219 VAF=228\r
-+ IKF=36.4m ISE=8.72p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=90.0m RE=0.257 RB=1.03 RC=0.103\r
-+ XTB=1.5 CJE=27.9p VJE=1.10 MJE=0.500 CJC=8.99p VJC=0.300 MJC=0.300 \r
-+ TF=1.13n TR=193n EG=1.12 )\r
-\r
-*SRC=MMST2222A;DI_MMST2222A;BJTs NPN; Si;  40.0V  0.600A  300MHz   Diodes\r
-Inc. BJTs\r
-.MODEL DI_MMST2222A  NPN (IS=61.0f NF=1.00 BF=410 VAF=114\r
-+ IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108\r
-+ XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=15.0p VJC=0.300 MJC=0.300 \r
-+ TF=496p TR=84.1n EG=1.12 )\r
-\r
-*SRC=MMST2907A;DI_MMST2907A;BJTs PNP; Si;  60.0V  0.600A  275MHz   Diodes\r
-Inc. BJTs\r
-.MODEL DI_MMST2907A  PNP (IS=59.9f NF=1.00 BF=410 VAF=139\r
-+ IKF=0.273 ISE=21.9p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.675 RE=0.344 RB=1.38 RC=0.138\r
-+ XTB=1.5 CJE=30.2p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 MJC=0.300 \r
-+ TF=513p TR=29.9n EG=1.12 )\r
-\r
-*SRC=MMST3904;DI_MMST3904;BJTs NPN; Si;  40.0V  0.200A  347MHz   Diodes\r
-Inc. BJTs\r
-.MODEL DI_MMST3904  NPN (IS=3.95e-016 NF=1.00 BF=410 VAF=114\r
-+ IKF=30.4m ISE=593f NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283\r
-+ XTB=1.5 CJE=9.95p VJE=1.10 MJE=0.500 CJC=8.99p VJC=0.300 MJC=0.300 \r
-+ TF=367p TR=70.2n EG=1.12 )\r
-\r
-*SRC=MMST3906;DI_MMST3906;BJTs PNP; Si;  40.0V  0.200A  347MHz   Diodes\r
-Inc. BJTs\r
-.MODEL DI_MMST3906  PNP (IS=7.06e-016 NF=1.00 BF=410 VAF=114\r
-+ IKF=60.7m ISE=1.12p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.150 RE=1.16 RB=4.63 RC=0.463\r
-+ XTB=1.5 CJE=7.84p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300 \r
-+ TF=422p TR=84.1n EG=1.12 )\r
-\r
-*SRC=MMST4124;DI_MMST4124;BJTs NPN; Si;  25.0V  0.200A  347MHz   Diodes\r
-Inc. BJTs\r
-.MODEL DI_MMST4124  NPN (IS=5.81e-016 NF=1.00 BF=492 VAF=90.0\r
-+ IKF=30.4m ISE=600f NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283\r
-+ XTB=1.5 CJE=7.84p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300 \r
-+ TF=387p TR=69.8n EG=1.12 )\r
-\r
-*SRC=MMST4126;DI_MMST4126;BJTs PNP; Si;  25.0V  0.200A  257MHz   Diodes\r
-Inc. BJTs\r
-.MODEL DI_MMST4126  PNP (IS=7.06e-016 NF=1.00 BF=492 VAF=90.0\r
-+ IKF=48.6m ISE=836f NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=16.0 IKR=0.120 RE=1.16 RB=4.63 RC=0.463\r
-+ XTB=1.5 CJE=7.24p VJE=1.10 MJE=0.500 CJC=6.86p VJC=0.300 MJC=0.300 \r
-+ TF=576p TR=94.0n EG=1.12 )\r
-\r
-*SRC=MMST4401;DI_MMST4401;BJTs NPN; Si;  40.0V  0.600A  275MHz   Diodes Inc. BJTs\r
-.MODEL DI_MMST4401  NPN (IS=1.27p NF=1.00 BF=410 VAF=114\r
-+ IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104\r
-+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300\r
-+ MJC=0.300 TF=533p TR=84.1n EG=1.12 )\r
-\r
-*SRC=MMST4403;DI_MMST4403;BJTs PNP; Si;  40.0V  0.600A  300MHz   Diodes\r
-Inc. BJTs\r
-.MODEL DI_MMST4403  PNP (IS=60.4f NF=1.00 BF=410 VAF=114\r
-+ IKF=0.334 ISE=24.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.825 RE=0.261 RB=1.04 RC=0.104\r
-+ XTB=1.5 CJE=31.4p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 MJC=0.300 \r
-+ TF=486p TR=81.1n EG=1.12 )\r
-\r
-*SRC=MMST5401;DI_MMST5401;BJTs PNP; Si;  150V  0.200A  257MHz   Diodes Inc. BJTs - Single device of dual\r\r
-.MODEL DI_MMST5401  PNP (IS=6.83f NF=1.00 BF=328 VAF=220\r\r
-+ IKF=72.9m ISE=4.78p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=20.0 IKR=0.180 RE=0.157 RB=0.630 RC=63.0m\r\r
-+ XTB=1.5 CJE=52.0p VJE=1.10 MJE=0.500 CJC=16.8p VJC=0.300\r\r
-+ MJC=0.300 TF=450p TR=95.4n EG=1.12 )\r
-\r
-*SRC=MMST5551;DI_MMST5551;BJTs NPN; Si;  160V  0.200A  130MHz   Diodes Inc.\r
-Transistor\r
-.MODEL DI_MMST5551  NPN (IS=20.2f NF=1.00 BF=219 VAF=228\r
-+ IKF=36.4m ISE=8.72p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=90.0m RE=0.257 RB=1.03 RC=0.103\r
-+ XTB=1.5 CJE=27.9p VJE=1.10 MJE=0.500 CJC=8.99p VJC=0.300 MJC=0.300 \r
-+ TF=1.13n TR=193n EG=1.12 )\r
-\r
-*SRC=MMSTA05;DI_MMSTA05;BJTs NPN; Si;  60.0V  0.500A  219MHz   Diodes Inc.\r
-BJTs\r
-.MODEL DI_MMSTA05  NPN (IS=94.2f NF=1.00 BF=331 VAF=139\r
-+ IKF=0.146 ISE=24.9p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=16.0 IKR=0.360 RE=0.215 RB=0.860 RC=86.0m\r
-+ XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 MJC=0.300 \r
-+ TF=633p TR=112n EG=1.12 )\r
-\r
-*SRC=MMSTA06;DI_MMSTA06;BJTs NPN; Si;  80.0V  0.500A  219MHz   Diodes Inc.\r
-BJTs\r
-.MODEL DI_MMSTA06  NPN (IS=94.2f NF=1.00 BF=301 VAF=161\r
-+ IKF=0.146 ISE=27.4p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=16.0 IKR=0.360 RE=0.215 RB=0.860 RC=86.0m\r
-+ XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 MJC=0.300 \r
-+ TF=633p TR=112n EG=1.12 )\r
-\r
-*SRC=MMSTA42;DI_MMSTA42;BJTs NPN; Si;  300V  0.200A  347MHz   Diodes Inc. BJTs\r\r
-.MODEL DI_MMSTA42  NPN (IS=109f NF=1.00 BF=219 VAF=312\r\r
-+ IKF=0.425 ISE=69.3p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=24.0 IKR=1.05 RE=1.21 RB=4.86 RC=0.486\r\r
-+ XTB=1.5 CJE=32.9p VJE=1.10 MJE=0.500 CJC=10.6p VJC=0.300\r\r
-+ MJC=0.300 TF=441p TR=72.5n EG=1.12 )\r
-\r
-*SRC=MMSTA55;DI_MMSTA55;BJTs PNP; Si;  60.0V  0.500A  70.0MHz   Diodes Inc.\r
-BJTs\r
-.MODEL DI_MMSTA55  PNP (IS=50.2f NF=1.00 BF=331 VAF=139\r
-+ IKF=0.182 ISE=20.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=16.0 IKR=0.450 RE=0.133 RB=0.532 RC=53.2m\r
-+ XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 MJC=0.300 \r
-+ TF=2.16n TR=350n EG=1.12 )\r
-\r
-*SRC=MMSTA56;DI_MMSTA56;BJTs PNP; Si;  80.0V  0.500A  70.0MHz   Diodes Inc.\r
-BJTs\r
-.MODEL DI_MMSTA56  PNP (IS=50.2f NF=1.00 BF=331 VAF=161\r
-+ IKF=0.182 ISE=20.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=16.0 IKR=0.450 RE=0.133 RB=0.532 RC=53.2m\r
-+ XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 MJC=0.300 \r
-+ TF=2.16n TR=350n EG=1.12 )\r
-\r
-*SRC=MMSTA92;DI_MMSTA92;BJTs PNP; Si;  300V  0.100A  60.0MHz   Diodes Inc.  BJTs\r\r
-.MODEL DI_MMSTA92  PNP (IS=53.7f NF=1.00 BF=164 VAF=312\r\r
-+ IKF=66.8m ISE=25.7p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=20.0 IKR=0.165 RE=0.565 RB=2.26 RC=0.226\r\r
-+ XTB=1.5 CJE=52.0p VJE=1.10 MJE=0.500 CJC=16.8p VJC=0.300\r\r
-+ MJC=0.300 TF=2.46n TR=426n EG=1.12 )\r
-\r
-*SRC=MMBT6427;DI_MMBT6427;BJTs NPN;Darlington;40.0V 0.500A Diodes Inc. Darlington Transistor\r*SYM=DARBJTN\r.SUBCKT DII_MMBT6427 col base emtr\rQ1 col base eb QPWR .1\rQ2 col eb emtr QPWR\rD1 emtr col  DSUB\rD2 eb base  DSUB\r.MODEL QPWR NPN  (IS=600f NF=1.00 BF=448  VAF=114\r+ IKF=0.400 ISE=10.9p NE=2.00 BR=4.00 NR=1.00\r+ VAR=48.0  IKR=0.600 RE=0.300 RB=1.20  RC=0.120\r+ XTB=1.5 CJE=189p  VJE=0.740 MJE=0.450 CJC=13.9p\r+  VJC=1.10 MJC=0.240 TF=1.30n  TR=659n )\r
-\r
-*SRC=MMBTA13;DI_MMBTA13;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. NPN Darlington \r
-*SYM=DARBJTN \r
-.SUBCKT DI_MMBTA13 col base emtr \r
-Q1 col base eb QPWR .1 \r
-Q2 col eb emtr QPWR \r
-D1 emtr col  DSUB \r
-D2 eb base  DSUB \r
-.MODEL QPWR NPN  (IS=360f NF=1.00 BF=134  VAF=98.6 \r
-+ IKF=0.240 ISE=21.9p NE=2.00 BR=4.00 NR=1.00 \r
-+ VAR=40.0  IKR=0.360 RE=4.00 RB=16.0  RC=1.60 \r
-+ XTB=1.5 CJE=189p  VJE=0.740 MJE=0.450 CJC=13.9p \r
-+  VJC=1.10 MJC=0.240 TF=3.77n  TR=617n ) \r
-.MODEL DSUB D( IS=360f N=1 RS=4.00  BV=30.0 \r
-+ IBV=.001  CJO=13.9p TT=617n ) \r
-.ENDS\r
-\r
-*SRC=MMBTA14;DI_MMBTA14;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor\r\r
-*SYM=DARBJTN\r\r
-.SUBCKT DI_MMBTA14 col base emtr\r\r
-Q1 col base eb QPWR .1\r\r
-Q2 col eb emtr QPWR\r\r
-D1 emtr col  DSUB\r\r
-D2 eb base  DSUB\r\r
-.MODEL QPWR NPN  (IS=360f NF=1.00 BF=141  VAF=98.6\r\r
-+ IKF=0.240 ISE=20.8p NE=2.00 BR=4.00 NR=1.00\r\r
-+ VAR=40.0  IKR=0.360 RE=0.333 RB=1.33  RC=0.133\r\r
-+ XTB=1.5 CJE=189p  VJE=0.740 MJE=0.450 CJC=13.9p\r\r
-+  VJC=1.10 MJC=0.240 TF=3.57n  TR=614n )=0.133\r\r
-+ XTB=1.5 CJE=189p  VJE=0.740 MJE=0.450 CJC=13.9p\r\r
-+  VJC=1.10 MJC=0.240 TF=3.57n  TR=614n )\r\r
-.MODEL DSUB D( IS=360f N=1 RS=0.333  BV=30.0\r\r
-+ IBV=.001  CJO=13.9p TT=614n )\r
-\r
-*SRC=MMBTA28;DI_MMBTA28;BJTs NPN;Darlington;80.0V 0.500A Diodes Inc. NPN Darlington \r
-*SYM=DARBJTN \r
-.SUBCKT DI_MMBTA28 col base emtr \r
-Q1 col base eb QPWR .1 \r
-Q2 col eb emtr QPWR \r
-D1 emtr col  DSUB \r
-D2 eb base  DSUB \r
-.MODEL QPWR NPN  (IS=600f NF=1.00 BF=134  VAF=161 \r
-+ IKF=0.400 ISE=36.5p NE=2.00 BR=4.00 NR=1.00 \r
-+ VAR=48.0  IKR=0.600 RE=0.500 RB=2.00  RC=0.200 \r
-+ XTB=1.5 CJE=189p  VJE=0.740 MJE=0.450 CJC=13.9p \r
-+  VJC=1.10 MJC=0.240 TF=6.15n  TR=1.01u ) \r
-.MODEL DSUB D( IS=600f N=1 RS=0.500  BV=80.0 \r
-+ IBV=.001  CJO=13.9p TT=1.01u ) \r
-.ENDS\r
-\r
-*SRC=MMBTA63;DI_MMBTA63;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc.  Darlington Transistor\r*SYM=DARBJTP\r.SUBCKT DII_MMBTA63 col base emtr\rQ1 col base eb QPWR .1\rQ2 col eb emtr QPWR\rD1  col emtr DSUB\rD2 base eb DSUB\r.MODEL QPWR PNP  (IS=600f NF=1.00 BF=100  VAF=98.6\r+ IKF=0.400 ISE=49.0p NE=2.00 BR=4.00 NR=1.00\r+ VAR=40.0  IKR=0.600 RE=0.340 RB=1.36  RC=0.136\r+ XTB=1.5 CJE=115p  VJE=0.740 MJE=0.450 CJC=16.5p\r+  VJC=1.10 MJC=0.240 TF=5.05n  TR=641n )\r
-\r
-*SRC=MMBTA64;DI_MMBTA64;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc.  Darlington Transistor\r*SYM=DARBJTP\r.SUBCKT DII_MMBTA64 col base emtr\rQ1 col base eb QPWR .1\rQ2 col eb emtr QPWR\rD1  col emtr DSUB\rD2 base eb DSUB\r.MODEL QPWR PNP  (IS=600f NF=1.00 BF=141  VAF=98.6\r+ IKF=0.400 ISE=34.6p NE=2.00 BR=4.00 NR=1.00\r+ VAR=40.0  IKR=0.600 RE=0.340 RB=1.36  RC=0.136\r+ XTB=1.5 CJE=115p  VJE=0.740 MJE=0.450 CJC=16.5p\r+  VJC=1.10 MJC=0.240 TF=3.57n  TR=614n )\r
-\r
-*SRC=MMST6427;DI_MMST6427;BJTs NPN;Darlington;40.0V 0.500A Diodes Inc. Darlington Transistor\r*SYM=DARBJTN\r.SUBCKT DII_MMST6427 col base emtr\rQ1 col base eb QPWR .1\rQ2 col eb emtr QPWR\rD1 emtr col  DSUB\rD2 eb base  DSUB\r.MODEL QPWR NPN  (IS=600f NF=1.00 BF=448  VAF=114\r+ IKF=0.400 ISE=10.9p NE=2.00 BR=4.00 NR=1.00\r+ VAR=48.0  IKR=0.600 RE=0.300 RB=1.20  RC=0.120\r+ XTB=1.5 CJE=189p  VJE=0.740 MJE=0.450 CJC=13.9p\r+  VJC=1.10 MJC=0.240 TF=1.30n  TR=659n )\r
-\r
-*SRC=MMSTA13;DI_MMSTA13;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor\r*SYM=DARBJTN\r.SUBCKT DI_MMSTA13 col base emtr\rQ1 col base eb QPWR .1\rQ2 col eb emtr QPWR\rD1 emtr col  DSUB\rD2 eb base  DSUB\r.MODEL QPWR NPN  (IS=360f NF=1.00 BF=100  VAF=98.6\r+ IKF=0.240 ISE=29.4p NE=2.00 BR=4.00 NR=1.00\r+ VAR=40.0  IKR=0.360 RE=0.333 RB=1.33  RC=0.133\r+ XTB=1.5 CJE=189p  VJE=0.740 MJE=0.450 CJC=13.9p\r+  VJC=1.10 MJC=0.240 TF=5.05n  TR=641n )\r
-\r
-*SRC=MMSTA14;DI_MMSTA14;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor\r
-*SYM=DARBJTN\r
-.SUBCKT DI_MMSTA14 col base emtr\r
-Q1 col base eb QPWR .1\r
-Q2 col eb emtr QPWR\r
-D1 emtr col  DSUB\r
-D2 eb base  DSUB\r
-.MODEL QPWR NPN  (IS=360f NF=1.00 BF=141  VAF=98.6\r
-+ IKF=0.240 ISE=20.8p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=40.0  IKR=0.360 RE=0.333 RB=1.33  RC=0.133\r
-+ XTB=1.5 CJE=189p  VJE=0.740 MJE=0.450 CJC=13.9p\r
-+  VJC=1.10 MJC=0.240 TF=3.57n  TR=614n )\r
-\r
-*SRC=MMSTA63;DI_MMSTA63;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc.  Darlington Transistor\r*SYM=DARBJTP\r.SUBCKT DII_MMSTA63 col base emtr\rQ1 col base eb QPWR .1\rQ2 col eb emtr QPWR\rD1  col emtr DSUB\rD2 base eb DSUB\r.MODEL QPWR PNP  (IS=600f NF=1.00 BF=100  VAF=98.6\r+ IKF=0.400 ISE=49.0p NE=2.00 BR=4.00 NR=1.00\r+ VAR=40.0  IKR=0.600 RE=0.340 RB=1.36  RC=0.136\r+ XTB=1.5 CJE=115p  VJE=0.740 MJE=0.450 CJC=16.5p\r+  VJC=1.10 MJC=0.240 TF=5.05n  TR=641n )\r
-\r
-*SRC=MMSTA64;DI_MMSTA64;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc.  Darlington Transistor\r*SYM=DARBJTP\r.SUBCKT DII_MMSTA64 col base emtr\rQ1 col base eb QPWR .1\rQ2 col eb emtr QPWR\rD1  col emtr DSUB\rD2 base eb DSUB\r.MODEL QPWR PNP  (IS=600f NF=1.00 BF=141  VAF=98.6\r+ IKF=0.400 ISE=34.6p NE=2.00 BR=4.00 NR=1.00\r+ VAR=40.0  IKR=0.600 RE=0.340 RB=1.36  RC=0.136\r+ XTB=1.5 CJE=115p  VJE=0.740 MJE=0.450 CJC=16.5p\r+  VJC=1.10 MJC=0.240 TF=3.57n  TR=614n )\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX114EH;DI_DCX114EH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX114EH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX114EH;DI_DCX114EH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX114EH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX114EK;DI_DCX114EK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX114EK  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX114EK;DI_DCX114EK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX114EK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX123JU;DI_DCX123JU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX123JU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX123JU;DI_DCX123JU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX123JU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX114TH;DI_DCX114TH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX114TH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX114TH;DI_DCX114TH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX114TH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX114TK;DI_DCX114TK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX114TK  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX114TK;DI_DCX114TK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX114TK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX114TU;DI_DCX114TU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX114TU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX114TU;DI_DCX114TU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX114TU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX114YH;DI_DCX114YH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX114YH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX114YH;DI_DCX114YH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX114YH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX114YK;DI_DCX114YK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX114YK  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX114YK;DI_DCX114YK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX114YK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX114YU;DI_DCX114YU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX114YU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX114YU;DI_DCX114YU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX114YU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX122LH;DI_DCX122LH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX122LH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX122LH;DI_DCX122LH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX122LH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX122TH;DI_DCX122TH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX122TH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX122TH;DI_DCX122TH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX122TH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX123JH;DI_DCX123JH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX123JH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX123JH;DI_DCX123JH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX123JH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX123JK;DI_DCX123JK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX123JK  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX123JK;DI_DCX123JK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX123JK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX123JU;DI_DCX123JU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX123JU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX123JU;DI_DCX123JU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX123JU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX124EH;DI_DCX124EH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX124EH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX124EH;DI_DCX124EH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX124EH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-*SRC=DCX124EK;DI_DCX124EK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX124EK  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX124EK;DI_DCX124EK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX124EK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX124EU;DI_DCX124EU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX124EU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX124EU;DI_DCX124EU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX124EU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX142JH;DI_DCX142JH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX142JH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX142JH;DI_DCX142JH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX142JH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX142TH;DI_DCX142TH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX142TH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX142TH;DI_DCX142TH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX142TH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX143EH;DI_DCX143EH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX143EH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX143EH;DI_DCX143EH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX143EH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX114EH;DI_DCX114EH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX114EH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX114EH;DI_DCX114EH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX114EH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX143TK;DI_DCX143TK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX143TK  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX143TK;DI_DCX143TK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX143TK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX143TU;DI_DCX143TU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX143TU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX143TU;DI_DCX143TU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX143TU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX144EH;DI_DCX144EH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX144EH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX144EH;DI_DCX144EH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX144EH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX144EK;DI_DCX144EK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX144EK  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX144EK;DI_DCX144EK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX144EK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DCX144EU;DI_DCX144EU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX144EU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-********************************************************************************************************************************\r
-***************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio\r
-tolerance.\r
-\r
-*SRC=DCX144EU;DI_DCX144EU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DCX144EU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA114EH;DI_DDA114EH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA114EH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA114EK;DI_DDA114EK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA114EK  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA114EU;DI_DDA114EU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA114EU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA114TH;DI_DDA114TH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA114TH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA114TK;DI_DDA114TK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA114TK  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA114TU;DI_DDA114TU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA114TU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA114YH;DI_DDA114YH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA114YH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA114YK;DI_DDA114YK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA114YK  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA114YU;DI_DDA114YU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA114YU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA122LH;DI_DDA122LH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA122LH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA122LU;DI_DDA122LU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA122LU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA122TH;DI_DDA122TH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA122TH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA122TU;DI_DDA122TU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA122TU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA123JH;DI_DDA123JH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA123JH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA123JK;DI_DDA123JK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA123JK  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA123JU;DI_DDA123JU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA123JU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA124EH;DI_DDA124EH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA124EH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA124EK;DI_DDA124EK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA124EK  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA124EU;DI_DDA124EU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA124EU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA142JH;DI_DDA142JH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA142JH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA142JU;DI_DDA142JU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA142JU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA142TH;DI_DDA142TH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA142TH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA142TU;DI_DDA142TU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA142TU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA143EH;DI_DDA143EH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA143EH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA143TH;DI_DDA143TH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA143TH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA143TK;DI_DDA143TK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA143TK  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA143TU;DI_DDA143TU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA143TU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA144EH;DI_DDA144EH;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA144EH  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA144EK;DI_DDA144EK;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA144EK  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDA144EU;DI_DDA144EU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDA144EU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC114EH;DI_DDC114EH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC114EH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC114EK;DI_DDC114EK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC114EK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC114EU;DI_DDC114EU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC114EU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC114TH;DI_DDC114TH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC114TH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC114TK;DI_DDC114TK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC114TK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC114TU;DI_DDC114TU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC114TU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC114YH;DI_DDC114YH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC114YH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC114YK;DI_DDC114YK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC114YK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC114YU;DI_DDC114YU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC114YU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC122LH;DI_DDC122LH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC122LH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC122LH;DI_DDC122LH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC122LH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC122TH;DI_DDC122TH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC122TH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC122TU;DI_DDC122TU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC122TU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC123JH;DI_DDC123JH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC123JH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC123JK;DI_DDC123JK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC123JK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC123JU;DI_DDC123JU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC123JU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC124EH;DI_DDC124EH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC124EH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC124EK;DI_DDC124EK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC124EK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC124EU;DI_DDC124EU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC124EU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC142JH;DI_DDC142JH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC142JH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC142JU;DI_DDC142JU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC142JU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC142TH;DI_DDC142TH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC142TH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC142TU;DI_DDC142TU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC142TU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC143EH;DI_DDC143EH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC143EH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC143TH;DI_DDC143TH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC143TH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC143TK;DI_DDC143TK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC143TK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC143TU;DI_DDC143TU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC143TU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC144EH;DI_DDC144EH;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC144EH  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC144EK;DI_DDC144EK;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC144EK  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDC144EU;DI_DDC144EU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDC144EU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA113TCA;DI_DDTA113TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA113TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA113TE;DI_DDTA113TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA113TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA113TKA;DI_DDTA113TKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA113TKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA113TUA;DI_DDTA113TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA113TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA113ZCA;DI_DDTA113ZCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA113ZCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA113ZE;DI_DDTA113ZE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA113ZE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA113ZKA;DI_DDTA113ZKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA113ZKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA113ZUA;DI_DDTA113ZUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA113ZUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA114ECA;DI_DDTA114ECA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA114ECA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA114EE;DI_DDTA114EE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA114EE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA114EKA;DI_DDTA114EKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA114EKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA114EUA;DI_DDTA114EUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA114EUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA114GCA;DI_DDTA114GCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA114GCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA114GE;DI_DDTA114GE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA114GE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA114GUA;DI_DDTA114GUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA114GUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA114KA;DI_DDTA114KA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA114KA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA114TCA;DI_DDTA114TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA114TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA114TE;DI_DDTA114TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA114TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA114TKA;DI_DDTA114TKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA114TKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA114TUA;DI_DDTA114TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA114TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA114WCA;DI_DDTA114WCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA114WCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA114WE;DI_DDTA114WE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA114WE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA114WKA;DI_DDTA114WKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA114WKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA114WUA;DI_DDTA114WUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA114WUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA114YCA;DI_DDTA114YCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA114YCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA114YE;DI_DDTA114YE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA114YE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA114YKA;DI_DDTA114YKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA114YKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA114YUA;DI_DDTA114YUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA114YUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA115ECA;DI_DDTA115ECA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA115ECA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA115EE;DI_DDTA115EE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA115EE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA115EKA;DI_DDTA115EKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA115EKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA115EUA;DI_DDTA115EUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA115EUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA115GCA;DI_DDTA115GCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA115GCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA115GE;DI_DDTA115GE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA115GE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA115GUA;DI_DDTA115GUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA115GUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA115KA;DI_DDTA115KA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA115KA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA115TCA;DI_DDTA115TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA115TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA115TE;DI_DDTA115TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA115TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA115TKA;DI_DDTA115TKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA115TKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA115TUA;DI_DDTA115TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA115TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA122LE;DI_DDTA122LE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA122LE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA122LU;DI_DDTA122LU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA122LU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA122TE;DI_DDTA122TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA122TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA122TU;DI_DDTA122TU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA122TU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA123ECA;DI_DDTA123ECA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA123ECA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA123EE;DI_DDTA123EE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA123EE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA123EKA;DI_DDTA123EKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA123EKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA123EUA;DI_DDTA123EUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA123EUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA123JCA;DI_DDTA123JCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA123JCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA123JE;DI_DDTA123JE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA123JE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA123JKA;DI_DDTA123JKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA123JKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA123JUA;DI_DDTA123JUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA123JUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA123TCA;DI_DDTA123TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA123TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA123TE;DI_DDTA123TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA123TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA123TKA;DI_DDTA123TKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA123TKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA123TUA;DI_DDTA123TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA123TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA123YCA;DI_DDTA123YCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA123YCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA123YE;DI_DDTA123YE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA123YE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA123YKA;DI_DDTA123YKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA123YKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA123YUA;DI_DDTA123YUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA123YUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA124ECA;DI_DDTA124ECA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA124ECA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA124EE;DI_DDTA124EE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA124EE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA124EKA;DI_DDTA124EKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA124EKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA124EUA;DI_DDTA124EUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA124EUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA124GCA;DI_DDTA124GCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA124GCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA124GE;DI_DDTA124GE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA124GE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA124GUA;DI_DDTA124GUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA124GUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA124KA;DI_DDTA124KA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA124KA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA124TCA;DI_DDTA124TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA124TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA124TE;DI_DDTA124TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA124TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA124TKA;DI_DDTA124TKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA124TKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA124TUA;DI_DDTA124TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA124TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA124XCA;DI_DDTA124XCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA124XCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA124XE;DI_DDTA124XE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA124XE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA124XKA;DI_DDTA124XKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA124XKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA124XUA;DI_DDTA124XUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA124XUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA125TCA;DI_DDTA125TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA125TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA125TE;DI_DDTA125TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA125TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA125TKA;DI_DDTA125TKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA125TKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA125TUA;DI_DDTA125TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA125TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA142JE;DI_DDTA142JE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA142JE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA142JU;DI_DDTA142JU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA142JU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA142TE;DI_DDTA142TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA142TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA142TU;DI_DDTA142TU;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA142TU  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA143ECA;DI_DDTA143ECA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA143ECA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA143EE;DI_DDTA143EE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA143EE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA143EKA;DI_DDTA143EKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA143EKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA143EUA;DI_DDTA143EUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA143EUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA143FCA;DI_DDTA143FCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA143FCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA143FE;DI_DDTA143FE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA143FE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA143FKA;DI_DDTA143FKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA143FKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA143FUA;DI_DDTA143FUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA143FUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA143TCA;DI_DDTA143TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA143TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA143TE;DI_DDTA143TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA143TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA143TKA;DI_DDTA143TKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA143TKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA143TUA;DI_DDTA143TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA143TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA143XCA;DI_DDTA143XCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA143XCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA143XE;DI_DDTA143XE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA143XE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA143XKA;DI_DDTA143XKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA143XKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA143XUA;DI_DDTA143XUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA143XUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA143ZCA;DI_DDTA143ZCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA143ZCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA143ZE;DI_DDTA143ZE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA143ZE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA143ZKA;DI_DDTA143ZKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA143ZKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA143ZUA;DI_DDTA143ZUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA143ZUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA144ECA;DI_DDTA144ECA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA144ECA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA144EE;DI_DDTA144EE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA144EE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA144EKA;DI_DDTA144EKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA144EKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA144EUA;DI_DDTA144EUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA144EUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA144GCA;DI_DDTA144GCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA144GCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA144GE;DI_DDTA144GE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA144GE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA144GUA;DI_DDTA144GUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA144GUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA144KA;DI_DDTA144KA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA144KA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA144TCA;DI_DDTA144TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA144TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA144TE;DI_DDTA144TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA144TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA144TKA;DI_DDTA144TKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA144TKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA144TUA;DI_DDTA144TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA144TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA144VCA;DI_DDTA144VCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA144VCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA144VE;DI_DDTA144VE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA144VE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA144VKA;DI_DDTA144VKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA144VKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA144VUA;DI_DDTA144VUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA144VUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA144WCA;DI_DDTA144WCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA144WCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA144WE;DI_DDTA144WE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA144WE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA144WKA;DI_DDTA144WKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA144WKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTA144WUA;DI_DDTA144WUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTA144WUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB113EC;DI_DDTB113EC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB113EC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB113EU;DI_DDTB113EU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB113EU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB113ZC;DI_DDTB113ZC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB113ZC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB113ZU;DI_DDTB113ZU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB113ZU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB114EC;DI_DDTB114EC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB114EC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB114EU;DI_DDTB114EU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB114EU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB114GC;DI_DDTB114GC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB114GC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB114GU;DI_DDTB114GU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB114GU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB114TC;DI_DDTB114TC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB114TC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB114TU;DI_DDTB114TU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB114TU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB122JC;DI_DDTB122JC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB122JC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB122JU;DI_DDTB122JU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB122JU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB122LC;DI_DDTB122LC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB122LC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB122LU;DI_DDTB122LU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB122LU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB122TC;DI_DDTB122TC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB122TC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB122TU;DI_DDTB122TU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB122TU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB123EC;DI_DDTB123EC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB123EC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB123EU;DI_DDTB123EU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB123EU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB123TC;DI_DDTB123TC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB123TC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB123TU;DI_DDTB123TU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB123TU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB123YC;DI_DDTB123YC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB123YC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB123YU;DI_DDTB123YU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB123YU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB133HC;DI_DDTB133HC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB133HC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB133HU;DI_DDTB133HU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB133HU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB142JC;DI_DDTB142JC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB142JC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB142JU;DI_DDTB142JU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB142JU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB142TC;DI_DDTB142TC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB142TC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB142TU;DI_DDTB142TU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB142TU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB143EC;DI_DDTB143EC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB143EC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB143EU;DI_DDTB143EU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB143EU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB143TC;DI_DDTB143TC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB143TC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTB143TU;DI_DDTB143TU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTB143TU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC113TCA;DI_DDTC113TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC113TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC113TE;DI_DDTC113TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC113TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC113TKA;DI_DDTC113TKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC113TKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC113TUA;DI_DDTC113TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC113TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC113ZCA;DI_DDTC113ZCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC113ZCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC113ZE;DI_DDTC113ZE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC113ZE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC113ZKA;DI_DDTC113ZKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC113ZKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-*SRC=DDTC113ZUA;DI_DDTC113ZUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC113ZUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC114EE;DI_DDTC114EE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC114EE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC114EKA;DI_DDTC114EKA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC114EKA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC114EUA;DI_DDTC114EUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC114EUA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC114GE;DI_DDTC114GE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC114GE  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC114GKA;DI_DDTC114GKA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC114GKA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC114GUA;DI_DDTC114GUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC114GUA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC114TCA;DI_DDTC114TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC114TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC114TE;DI_DDTC114TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC114TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC114TKA;DI_DDTC114TKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC114TKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC114TUA;DI_DDTC114TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC114TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC114WCA;DI_DDTC114WCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC114WCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC114WE;DI_DDTC114WE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC114WE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC114WKA;DI_DDTC114WKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC114WKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC114WUA;DI_DDTC114WUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC114WUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC114YCA;DI_DDTC114YCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC114YCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC114YE;DI_DDTC114YE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC114YE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC114YKA;DI_DDTC114YKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC114YKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC114YUA;DI_DDTC114YUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC114YUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC115EE;DI_DDTC115EE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC115EE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC115EKA;DI_DDTC115EKA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC115EKA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC115EUA;DI_DDTC115EUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC115EUA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC115GE;DI_DDTC115GE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC115GE  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC115GKA;DI_DDTC115GKA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC115GKA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC115GUA;DI_DDTC115GUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC115GUA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC115TCA;DI_DDTC115TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC115TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC115TE;DI_DDTC115TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC115TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC115TKA;DI_DDTC115TKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC115TKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC115TUA;DI_DDTC115TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC115TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC124GE;DI_DDTC124GE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC124GE  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC122LU;DI_DDTC122LU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC122LU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC142JE;DI_DDTC142JE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC142JE  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC122TU;DI_DDTC122TU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC122TU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC123EE;DI_DDTC123EE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC123EE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC123EKA;DI_DDTC123EKA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC123EKA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC123EUA;DI_DDTC123EUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC123EUA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC123JCA;DI_DDTC123JCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC123JCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC123JE;DI_DDTC123JE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC123JE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC123JKA;DI_DDTC123JKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC123JKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC123JUA;DI_DDTC123JUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC123JUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC123TCA;DI_DDTC123TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC123TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC123TE;DI_DDTC123TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC123TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC123TKA;DI_DDTC123TKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC123TKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC123TUA;DI_DDTC123TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC123TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC123YCA;DI_DDTC123YCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC123YCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC123YE;DI_DDTC123YE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC123YE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC123YKA;DI_DDTC123YKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC123YKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-*SRC=DDTC123YUA;DI_DDTC123YUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC123YUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC124EE;DI_DDTC124EE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC124EE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC144EKA;DI_DDTC144EKA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC144EKA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC124EUA;DI_DDTC124EUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC124EUA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC124GE;DI_DDTC124GE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC124GE  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC124GKA;DI_DDTC124GKA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC124GKA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC124GUA;DI_DDTC124GUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC124GUA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC124TCA;DI_DDTC124TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC124TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC124TE;DI_DDTC124TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC124TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC124TKA;DI_DDTC124TKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC124TKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC124TUA;DI_DDTC124TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC124TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC124XCA;DI_DDTC124XCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC124XCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC124XE;DI_DDTC124XE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC124XE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC124XKA;DI_DDTC124XKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC124XKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC124XUA;DI_DDTC124XUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC124XUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC125TCA;DI_DDTC125TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC125TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC125TE;DI_DDTC125TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC125TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC125TKA;DI_DDTC125TKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC125TKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC125TUA;DI_DDTC125TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC125TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC122LE;DI_DDTC122LE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC122LE  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC122LE;DI_DDTC122LE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC122LE  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC142TE;DI_DDTC142TE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC142TE  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC142TU;DI_DDTC142TU;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC142TU  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC143EE;DI_DDTC143EE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC143EE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC143EKA;DI_DDTC143EKA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC143EKA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC143EUA;DI_DDTC143EUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC143EUA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC143FCA;DI_DDTC143FCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC143FCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC143FE;DI_DDTC143FE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC143FE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC143FKA;DI_DDTC143FKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC143FKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC143FUA;DI_DDTC143FUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC143FUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC143TCA;DI_DDTC143TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC143TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC143TE;DI_DDTC143TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC143TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC143TKA;DI_DDTC143TKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC143TKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC143TUA;DI_DDTC143TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC143TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC143XCA;DI_DDTC143XCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC143XCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC143XE;DI_DDTC143XE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC143XE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC143XKA;DI_DDTC143XKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC143XKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC143XUA;DI_DDTC143XUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC143XUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC143ZCA;DI_DDTC143ZCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC143ZCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC143ZE;DI_DDTC143ZE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC143ZE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC143ZKA;DI_DDTC143ZKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC143ZKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC143ZUA;DI_DDTC143ZUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC143ZUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC144EE;DI_DDTC144EE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC144EE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC144EKA;DI_DDTC144EKA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC144EKA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC144EUA;DI_DDTC144EUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC144EUA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC144GE;DI_DDTC144GE;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC144GE  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC144GKA;DI_DDTC144GKA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC144GKA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-******************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.\r
-When applying this SPICE model to your circuit simulation be certain\r
-to add R1 and/or R2 values per the table found on sheet 1 of the data\r
-sheet.  Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio \r
-tolerance.\r
-\r
-*SRC=DDTC144GUA;DI_DDTC144GUA;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC144GUA  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-*****************************************************************************************************************************************\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC144TCA;DI_DDTC144TCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC144TCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC144TE;DI_DDTC144TE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC144TE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC144TKA;DI_DDTC144TKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC144TKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC144TUA;DI_DDTC144TUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC144TUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC144VCA;DI_DDTC144VCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC144VCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC144VE;DI_DDTC144VE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC144VE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC144VKA;DI_DDTC144VKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC144VKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC144VUA;DI_DDTC144VUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC144VUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC144WCA;DI_DDTC144WCA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC144WCA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC144WE;DI_DDTC144WE;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC144WE  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC144WKA;DI_DDTC144WKA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC144WKA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-Note:  The following SPICE model is for the transistor element.  \r
-When applying this SPICE model to your circuit simulation be certain to \r
-add R1 and/or R2 values per the table found on sheet 1 of the data sheet. \r
-Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTC144WUA;DI_DDTC144WUA;BJTs PNP; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTC144WUA  NPN (IS=9.98f NF=1.00 BF=766 VAF=127\r
-+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326\r
-+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300\r
-+ MJC=0.300 TF=567p TR=119n EG=1.12 )\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD113EC;DI_DDTD113EC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD113EC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD113EU;DI_DDTD113EU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD113EU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD113ZC;DI_DDTD113ZC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD113ZC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD113ZU;DI_DDTD113ZU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD113ZU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD114EC;DI_DDTD114EC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD114EC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD114EU;DI_DDTD114EU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD114EU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD114GC;DI_DDTD114GC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD114GC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD114GU;DI_DDTD114GU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD114GU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD114TC;DI_DDTD114TC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD114TC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD114TU;DI_DDTD114TU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD114TU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD122JC;DI_DDTD122JC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD122JC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD122JU;DI_DDTD122JU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD122JU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD122LC;DI_DDTD122LC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD122LC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD122LU;DI_DDTD122LU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD122LU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD122TC;DI_DDTD122TC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD122TC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD122TU;DI_DDTD122TU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD122TU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD123EC;DI_DDTD123EC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD123EC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD123EU;DI_DDTD123EU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD123EU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD123TC;DI_DDTD123TC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD123TC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD123TU;DI_DDTD123TU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD123TU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD123YC;DI_DDTD123YC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD123YC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD123YU;DI_DDTD123YU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD123YU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD133HC;DI_DDTD133HC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD133HC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD133HU;DI_DDTD133HU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD133HU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD142JC;DI_DDTD142JC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD142JC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD142JU;DI_DDTD142JU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD142JU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD142TC;DI_DDTD142TC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD142TC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD142TU;DI_DDTD142TU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD142TU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD143EC;DI_DDTD143EC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD143EC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD143EU;DI_DDTD143EU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD143EU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD143TC;DI_DDTD143TC;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD143TC  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-**************************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=DDTD143TU;DI_DDTD143TU;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_DDTD143TU  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-******************************************************************************************************************************\r
-500mA PNP\r
-******************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.  When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=MIMD10A;DI_MIMD10A;BJTs PNP; Si;  32.0V  0.500A  220MHz   Diodes Inc. PBTs\r
-.MODEL DI_MIMD10A  PNP (IS=50.6f NF=1.00 BF=534 VAF=102\r
-+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113\r
-+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300\r
-+ MJC=0.300 TF=605p TR=120n EG=1.12 )\r
-******************************************************************************************************************************\r
-100mA NPN\r
-******************************************************************************************************************************\r
-Note:  The following SPICE model is for the transistor element.  When applying this SPICE model to your circuit simulation be \r
-certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet.  Allow +/- 30% resistance tolerance and +/- \r
-20% for R2/R1 ratio tolerance.\r
-\r
-*SRC=MIMD10A;DI_MIMD10A;BJTs NPN; Si;  50.0V  0.150A  200MHz   Diodes Inc. PBTs\r
-.MODEL DI_MIMD10A  NPN (IS=16.8f NF=1.00 BF=766 VAF=127\r
-+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266\r
-+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300\r
-+ MJC=0.300 TF=549p TR=119n EG=1.12 )\r
-******************************************************************************************************************************\r
-\r
-*SRC=2N7002;2N7002;MOSFETs N;Enh;60.0V 0.115A 7.50ohms  Diodes Inc. -\r
-.MODEL 2N7002  NMOS( LEVEL=1 VTO=2.50 KP=32.0m  GAMMA=3.10\r
-+ PHI=.75  LAMBDA=39.9u RD=1.05 RS=1.05\r
-+ IS=57.5f  PB=0.800 MJ=0.460 CBD=98.8p \r
-+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )\r
-*   -- Assumes default L=100U W=100U --\r
-\r
-*SRC=2N7002DW;DI_2N7002DW;MOSFETs N;Enh;60.0V 0.115A 3.20ohms  Diodes Inc. MOSFET - One element of dual\r.MODEL DI_2N7002DW  NMOS( LEVEL=1 VTO=1.50 KP=32.0m  GAMMA=1.86\r+ PHI=.75  LAMBDA=34.2u RD=0.448 RS=0.448\r+ IS=57.5f  PB=0.800 MJ=0.460 CBD=44.5p \r+ CBS=53.4p  CGSO=24.0n CGDO=20.0n CGBO=176n  )  *   -- Assumes default L=100U W=100U --\r
-\r
-*SRC=2N7002E;DI_2N7002E;MOSFETs N;Enh;60.0V 0.240A 4.00ohms  Diodes Inc. MOSFET .MODEL DI_2N7002E  NMOS( LEVEL=1 VTO=2.50 KP=781u  GAMMA=3.10\r
-+ PHI=.75  LAMBDA=83.2u RD=0.560 RS=0.560\r
-+ IS=120f  PB=0.800 MJ=0.460 CBD=44.5p\r
-+ CBS=53.4p  CGSO=24.0n CGDO=20.0n CGBO=176n  )\r
-*   -- Assumes default L=100U W=100U --\r
-\r
-*SRC=2N7002T;DI_2N7002T;MOSFETs N;Enh;60.0V 0.115A 2.00ohms  Didoes Inc. MOSFET \r.MODEL DI_2N7002T  NMOS( LEVEL=1 VTO=1.50 KP=32.0m  GAMMA=1.86\r+ PHI=.75  LAMBDA=40.0u RD=0.280 RS=0.280\r+ IS=57.5f  PB=0.800 MJ=0.460 CBD=44.5p \r+ CBS=53.4p  CGSO=24.0n CGDO=20.0n CGBO=176n  )   *   -- Assumes default L=100U W=100U --\r
-\r
-*SRC=2N7002W;DI_2N7002W;MOSFETs N;Enh;60.0V 0.115A 3.20ohms  Diodes Inc. MOSFET \r.MODEL DI_2N7002W  NMOS( LEVEL=1 VTO=1.50 KP=32.0m  GAMMA=1.86\r+ PHI=.75  LAMBDA=40.0u RD=0.448 RS=0.448\r+ IS=57.5f  PB=0.800 MJ=0.460 CBD=44.5p \r+ CBS=53.4p  CGSO=24.0n CGDO=20.0n CGBO=176n  )   *   -- Assumes default L=100U W=100U --\r
-\r
-*SRC=BS870;DI_BS870;MOSFETs N;Enh;60.0V 0.250A 3.50ohms  Diodes Inc. MOSFET \r.MODEL DI_BS870  NMOS( LEVEL=1 VTO=2.00 KP=32.0m  GAMMA=2.48\r+ PHI=.75  LAMBDA=86.8u RD=0.490 RS=0.490\r+ IS=125f  PB=0.800 MJ=0.460 CBD=29.8p \r+ CBS=35.8p  CGSO=24.0n CGDO=20.0n CGBO=176n  )   *   -- Assumes default L=100U W=100U --\r
-\r
-*SRC=BSS123;DI_BSS123;MOSFETs N;Enh;100V 0.170A 1.00ohms  Diodes Inc.\r
-MOSFET\r
-.MODEL DI_BSS123  NMOS( LEVEL=1 VTO=1.00 KP=6.37m  GAMMA=1.24\r
-+ PHI=.75  LAMBDA=625u RD=0.140 RS=0.140\r
-+ IS=85.0f  PB=0.800 MJ=0.460 CBD=19.8p\r
-+ CBS=23.7p  CGSO=36.0n CGDO=30.0n CGBO=124n  )\r
-*   -- Assumes default L=100U W=100U --\r
-\r
-*SRC=BSS123W;DI_BSS123W;MOSFETs N;Enh;100V 0.170A 1.00ohms  Diodes Inc. MOSFET \r.MODEL DI_BSS123W  NMOS( LEVEL=1 VTO=1.40 KP=0.805  GAMMA=1.74\r+ PHI=.75  LAMBDA=41.8u RD=0.140 RS=0.140\r+ IS=85.0f  PB=0.800 MJ=0.460 CBD=39.5p \r+ CBS=47.4p  CGSO=24.0n CGDO=20.0n CGBO=246n  )   *   -- Assumes default L=100U W=100U --\r
-\r
-*SRC=BSS138;DI_BSS138;MOSFETs N;Enh;50.0V 0.200A 1.40ohms  Diodes Inc.\r
-MOSFET\r
-.MODEL DI_BSS138  NMOS( LEVEL=1 VTO=1.20 KP=7.50m  GAMMA=1.49\r
-+ PHI=.75  LAMBDA=1.25m RD=0.196 RS=0.196\r
-+ IS=100f  PB=0.800 MJ=0.460 CBD=18.4p\r
-+ CBS=22.0p  CGSO=28.8n CGDO=24.0n CGBO=247n  )\r
-*   -- Assumes default L=100U W=100U --\r
-\r
-*SRC=BSS138DW;DI_BSS138DW;MOSFETs N;Enh;50.0V 0.200A 1.60ohms  Diodes Inc. MOSFET - One element of dual \r.MODEL DI_BSS138DW  NMOS( LEVEL=1 VTO=1.20 KP=50.0m  GAMMA=1.49\r+ PHI=.75  LAMBDA=83.2u RD=0.224 RS=0.224\r+ IS=100f  PB=0.800 MJ=0.460 CBD=56.3p \r+ CBS=67.5p  CGSO=96.0n CGDO=80.0n CGBO=324n  )   *   -- Assumes default L=100U W=100U --\r
-\r
-*SRC=BSS138W;DI_BSS138W;MOSFETs N;Enh;50.0V 0.200A 1.60ohms  Diodes Inc. MOSFET\r.MODEL DI_BSS138W  NMOS( LEVEL=1 VTO=1.20 KP=50.0m  GAMMA=1.49\r+ PHI=.75  LAMBDA=83.2u RD=0.224 RS=0.224\r+ IS=100f  PB=0.800 MJ=0.460 CBD=56.3p \r+ CBS=67.5p  CGSO=96.0n CGDO=80.0n CGBO=324n  )   *   -- Assumes default L=100U W=100U --\r
-\r
-*SRC=BSS84;DI_BSS84;MOSFETs P;Enh;50.0V 0.130A 6.00ohms  Diodes Inc. MOSFET\r
-.MODEL DI_BSS84  PMOS( LEVEL=1 VTO=-1.60 KP=4.87m  GAMMA=1.98\r
-+ PHI=.75  LAMBDA=1.25m RD=0.840 RS=0.840\r
-+ IS=65.0f  PB=0.800 MJ=0.460 CBD=46.6p\r
-+ CBS=55.9p  CGSO=50.7n CGDO=42.2n CGBO=69.5n  )\r
-*   -- Assumes default L=100U W=100U --\r
-\r
-*SRC=BSS84;DI_BSS84;MOSFETs P;Enh;50.0V 0.130A 6.00ohms  Diodes Inc. MOSFET\r
-.MODEL DI_BSS84  PMOS( LEVEL=1 VTO=-1.60 KP=4.87m  GAMMA=1.98\r
-+ PHI=.75  LAMBDA=1.25m RD=0.840 RS=0.840\r
-+ IS=65.0f  PB=0.800 MJ=0.460 CBD=46.6p\r
-+ CBS=55.9p  CGSO=50.7n CGDO=42.2n CGBO=69.5n  )\r
-*   -- Assumes default L=100U W=100U -- \r
-\r
-*SRC=2N7002;2N7002;MOSFETs N;Enh;60.0V 0.115A 7.50ohms  Diodes Inc. -\r
-.MODEL 2N7002  NMOS( LEVEL=1 VTO=2.50 KP=32.0m  GAMMA=3.10\r
-+ PHI=.75  LAMBDA=39.9u RD=1.05 RS=1.05\r
-+ IS=57.5f  PB=0.800 MJ=0.460 CBD=98.8p \r
-+ CBS=119p  CGSO=60.0n CGDO=50.0n CGBO=390n  )\r
-*   -- Assumes default L=100U W=100U --\r
-\r
-*SRC=BSS84DW;DI_BSS84DW;MOSFETs P;Enh;50.0V 0.130A 6.00ohms  Diodes Inc. MOSFET- One element of dual\r.MODEL DI_BSS84DW  PMOS( LEVEL=1 VTO=-1.60 KP=25.0m  GAMMA=1.98\r+ PHI=.75  LAMBDA=108u RD=0.840 RS=0.840\r+ IS=65.0f  PB=0.800 MJ=0.460 CBD=43.0p \r+ CBS=51.7p  CGSO=144n CGDO=120n CGBO=186n  )   *   -- Assumes default L=100U W=100U --\r
-\r
-*SRC=BSS84W;DI_BSS84W;MOSFETs P;Enh;50.0V 0.130A 6.00ohms  Diodes Inc. MOSFET\r.MODEL DI_BSS84W  PMOS( LEVEL=1 VTO=-1.60 KP=25.0m  GAMMA=1.98\r+ PHI=.75  LAMBDA=108u RD=0.840 RS=0.840\r+ IS=65.0f  PB=0.800 MJ=0.460 CBD=64.2p \r+ CBS=77.1p  CGSO=144n CGDO=120n CGBO=341n  )   *   -- Assumes default L=100U W=100U --\r
-\r
-*SRC=DMN100;DI_DMN100;MOSFETs N;Enh;30.0V 1.10A 0.150ohms  Diodes Inc. MOSFET\r.MODEL DI_DMN100  NMOS( LEVEL=1 VTO=2.00 KP=11.5  GAMMA=2.48\r+ PHI=.75  LAMBDA=306u RD=21.0m RS=21.0m\r+ IS=550f  PB=0.800 MJ=0.460 CBD=199p \r+ CBS=238p  CGSO=360n CGDO=300n CGBO=840n  )   *   -- Assumes default L=100U W=100U --\r
-\r
-*SRC=MMBF170;DI_MMBF170;MOSFETs N;Enh;60.0V 0.500A 2.10ohms  Diodes Inc. MOSFET \r
-.MODEL DI_MMBF170  NMOS( LEVEL=1 VTO=2.10 KP=18.8m  GAMMA=2.60 \r
-+ PHI=.75  LAMBDA=1.04m RD=0.294 RS=0.294 \r
-+ IS=250f  PB=0.800 MJ=0.460 CBD=29.8p \r
-+ CBS=35.8p  CGSO=24.0n CGDO=20.0n CGBO=176n  ) \r
-*   -- Assumes default L=100U W=100U --\r
-\r
-*******************************************************************************************************************************\r
-*SRC=CTA2N1P;DI_CTA2N1P_BJT;BJTs NPN; Si;  40.0V  0.600A  275MHz   Diodes Inc. BJTs\r
-.MODEL DI_CTA2N1P_BJT  NPN (IS=1.27p NF=1.00 BF=410 VAF=114\r
-+ IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104\r
-+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300\r
-+ MJC=0.300 TF=533p TR=84.1n EG=1.12 )\r
-\r
-*SRC=CTA2N1P;DI_CTA2N1P_MOSFET;MOSFETs P;Enh;50.0V 0.130A 6.00ohms  Diodes Inc. MOSFET\r
-.MODEL DI_CTA2N1P_MOSFET  PMOS( LEVEL=1 VTO=-1.60 KP=25.0m  GAMMA=1.98\r
-+ PHI=.75  LAMBDA=108u RD=0.840 RS=0.840\r
-+ IS=65.0f  PB=0.800 MJ=0.460 CBD=64.2p \r
-+ CBS=77.1p  CGSO=144n CGDO=120n CGBO=341n  )\r
-*   -- Assumes default L=100U W=100U --\r
-*******************************************************************************************************************************\r
-\r
-----------------------------------------------------------------------------------------------------------------------------------------------------------------\r
-*SRC=CTA2P1N;DI_CTA2P1N_BJT;BJTs PNP; Si;  40.0V  0.600A  200MHz   Diodes Inc. BJTs\r
-.MODEL DI_CTA2P1N_BJT  PNP (IS=60.4f NF=1.00 BF=410 VAF=114\r
-+ IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00\r
-+ VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104\r
-+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300\r
-+ MJC=0.300 TF=667p TR=84.1n EG=1.12 )\r
-\r
-*SRC=CTA2P1N;DI_CTA2P1N_MOSFET;MOSFETs N;Enh;60.0V 0.115A 2.00ohms  Didoes Inc. MOSFET \r
-.MODEL DI_CTA2P1N_MOSFET  NMOS( LEVEL=1 VTO=1.50 KP=32.0m  GAMMA=1.86\r
-+ PHI=.75  LAMBDA=40.0u RD=0.280 RS=0.280\r
-+ IS=57.5f  PB=0.800 MJ=0.460 CBD=44.5p \r
-+ CBS=53.4p  CGSO=24.0n CGDO=20.0n CGBO=176n  )\r
-*   -- Assumes default L=100U W=100U --\r
------------------------------------------------------------------------------------------------------------------------------------------------------------------\r
-\r