*SRC=1N4728A;DI_1N4728A;Diodes;Zener <=10V; 3.30V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4728A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.972 .MODEL DF D ( IS=125p RS=0.620 N=1.10 + CJO=364p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=25.0f RS=1.24 N=3.00 ) .ENDS *SRC=1N4729A;DI_1N4729A;Diodes;Zener <=10V; 3.60V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4729A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.30 .MODEL DF D ( IS=114p RS=0.620 N=1.10 + CJO=319p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=22.9f RS=0.923 N=3.00 ) .ENDS *SRC=1N4730A;DI_1N4730A;Diodes;Zener <=10V; 3.90V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4730A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.63 .MODEL DF D ( IS=106p RS=0.620 N=1.10 + CJO=283p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=21.1f RS=0.645 N=3.00 ) .ENDS *SRC=1N4732A;DI_1N4732A;Diodes;Zener <=10V; 4.70V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4732A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.99 .MODEL DF D ( IS=87.7p RS=0.620 N=1.10 + CJO=214p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=17.5f RS=0.333 N=2.28 ) .ENDS *SRC=1N4733A;DI_1N4733A;Diodes;Zener <=10V; 5.10V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4733A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.69 .MODEL DF D ( IS=80.8p RS=0.620 N=1.10 + CJO=189p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=16.2f RS=0.296 N=1.87 ) .ENDS *SRC=1N4734A;DI_1N4734A;Diodes;Zener <=10V; 5.60V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4734A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.48 .MODEL DF D ( IS=73.6p RS=0.620 N=1.10 + CJO=165p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=14.7f RS=0.256 N=1.49 ) .ENDS *SRC=1N4735A;DI_1N4735A;Diodes;Zener <=10V; 6.20V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4735A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.33 .MODEL DF D ( IS=66.5p RS=0.620 N=1.10 + CJO=141p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=13.3f RS=0.218 N=1.16 ) .ENDS *SRC=1N4736A;DI_1N4736A;Diodes;Zener <=10V; 6.80V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4736A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.05 .MODEL DF D ( IS=60.6p RS=0.620 N=1.10 + CJO=123p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.1f RS=0.209 N=1.00 ) .ENDS *SRC=1N4737A;DI_1N4737A;Diodes;Zener <=10V; 7.50V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4737A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.68 .MODEL DF D ( IS=54.9p RS=0.620 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=11.0f RS=0.247 N=1.09 ) .ENDS *SRC=1N4738A;DI_1N4738A;Diodes;Zener <=10V; 8.20V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4738A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.33 .MODEL DF D ( IS=50.2p RS=0.620 N=1.10 + CJO=92.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.0f RS=0.288 N=1.15 ) .ENDS *SRC=1N4739A;DI_1N4739A;Diodes;Zener <=10V; 9.10V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4739A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.16 .MODEL DF D ( IS=45.3p RS=0.620 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.05f RS=0.344 N=1.24 ) .ENDS *SRC=1N4740A;DI_1N4740A;Diodes;Zener <=10V; 10.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4740A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.02 .MODEL DF D ( IS=41.2p RS=0.620 N=1.10 + CJO=68.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24f RS=0.403 N=1.30 ) .ENDS *SRC=1N4741A;DI_1N4741A;Diodes;Zener 10V-50V; 11.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4741A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.94 .MODEL DF D ( IS=37.5p RS=0.620 N=1.10 + CJO=101p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49f RS=0.474 N=1.41 ) .ENDS *SRC=1N4742A;DI_1N4742A;Diodes;Zener 10V-50V; 12.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4742A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.9 .MODEL DF D ( IS=34.3p RS=0.620 N=1.10 + CJO=94.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=0.550 N=1.49 ) .ENDS *SRC=1N4743A;DI_1N4743A;Diodes;Zener 10V-50V; 13.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4743A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.8 .MODEL DF D ( IS=31.7p RS=0.620 N=1.10 + CJO=88.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.34f RS=0.630 N=1.55 ) .ENDS *SRC=1N4744A;DI_1N4744A;Diodes;Zener 10V-50V; 15.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4744A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=27.5p RS=0.620 N=1.10 + CJO=78.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=0.804 N=1.77 ) .ENDS *SRC=1N4745A;DI_1N4745A;Diodes;Zener 10V-50V; 16.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4745A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 14.6 .MODEL DF D ( IS=25.7p RS=0.620 N=1.10 + CJO=74.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=0.897 N=1.80 ) .ENDS *SRC=1N4746A;DI_1N4746A;Diodes;Zener 10V-50V; 18.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4746A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 16.5 .MODEL DF D ( IS=22.9p RS=0.620 N=1.10 + CJO=67.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=1.10 N=1.98 ) .ENDS *SRC=1N4747A;DI_1N4747A;Diodes;Zener 10V-50V; 20.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4747A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 18.4 .MODEL DF D ( IS=20.6p RS=0.620 N=1.10 + CJO=62.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=1.31 N=2.12 ) .ENDS *SRC=1N4748A;DI_1N4748A;Diodes;Zener 10V-50V; 22.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4748A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 20.3 .MODEL DF D ( IS=18.7p RS=0.620 N=1.10 + CJO=58.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=1.54 N=2.29 ) .ENDS *SRC=1N4749A;DI_1N4749A;Diodes;Zener 10V-50V; 24.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4749A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 22.2 .MODEL DF D ( IS=17.2p RS=0.620 N=1.10 + CJO=54.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=1.79 N=2.42 ) .ENDS *SRC=1N4750A;DI_1N4750A;Diodes;Zener 10V-50V; 27.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4750A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.0 .MODEL DF D ( IS=15.3p RS=0.620 N=1.10 + CJO=50.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.05f RS=2.18 N=2.68 ) .ENDS *SRC=1N4751A;DI_1N4751A;Diodes;Zener 10V-50V; 30.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4751A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.8 .MODEL DF D ( IS=13.7p RS=0.620 N=1.10 + CJO=46.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=2.61 N=2.87 ) .ENDS *SRC=1N4752A;DI_1N4752A;Diodes;Zener 10V-50V; 33.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4752A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.8 .MODEL DF D ( IS=12.5p RS=0.620 N=1.10 + CJO=43.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.50f RS=3.07 N=2.98 ) .ENDS *SRC=1N4753A;DI_1N4753A;Diodes;Zener 10V-50V; 36.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4753A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.7 .MODEL DF D ( IS=11.4p RS=0.620 N=1.10 + CJO=41.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=4.38 N=3.00 ) .ENDS *SRC=1N4754A;DI_1N4754A;Diodes;Zener 10V-50V; 39.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4754A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.7 .MODEL DF D ( IS=10.6p RS=0.620 N=1.10 + CJO=39.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.11f RS=5.78 N=3.00 ) .ENDS *SRC=1N4755A;DI_1N4755A;Diodes;Zener 10V-50V; 43.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4755A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.7 .MODEL DF D ( IS=9.58p RS=0.620 N=1.10 + CJO=37.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.92f RS=7.99 N=3.00 ) .ENDS *SRC=1N4756A;DI_1N4756A;Diodes;Zener 10V-50V; 47.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4756A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 44.7 .MODEL DF D ( IS=8.77p RS=0.620 N=1.10 + CJO=35.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.75f RS=10.2 N=3.00 ) .ENDS *SRC=1N4757A;DI_1N4757A;Diodes;Zener >50V; 51.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4757A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.7 .MODEL DF D ( IS=8.08p RS=0.620 N=1.10 + CJO=33.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.62f RS=12.4 N=3.00 ) .ENDS *SRC=1N4758A;DI_1N4758A;Diodes;Zener >50V; 56.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4758A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 53.7 .MODEL DF D ( IS=7.36p RS=0.620 N=1.10 + CJO=32.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.47f RS=15.5 N=3.00 ) .ENDS *SRC=1N4759A;DI_1N4759A;Diodes;Zener >50V; 62.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4759A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 59.7 .MODEL DF D ( IS=6.65p RS=0.620 N=1.10 + CJO=30.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.33f RS=19.6 N=3.00 ) .ENDS *SRC=1N4760A;DI_1N4760A;Diodes;Zener >50V; 68.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4760A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 65.7 .MODEL DF D ( IS=6.06p RS=0.620 N=1.10 + CJO=29.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.21f RS=24.6 N=3.00 ) .ENDS *SRC=1N4761A;DI_1N4761A;Diodes;Zener >50V; 75.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4761A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 72.7 .MODEL DF D ( IS=5.49p RS=0.620 N=1.10 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=30.4 N=3.00 ) .ENDS *SRC=1N4762A;DI_1N4762A;Diodes;Zener >50V; 82.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4762A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 79.7 .MODEL DF D ( IS=5.02p RS=0.620 N=1.10 + CJO=26.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.00f RS=36.8 N=3.00 ) .ENDS *SRC=1N4763A;DI_1N4763A;Diodes;Zener >50V; 91.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4763A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 88.6 .MODEL DF D ( IS=4.53p RS=0.620 N=1.10 + CJO=25.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.05e-016 RS=47.1 N=3.00 ) .ENDS *SRC=1N4764A;DI_1N4764A;Diodes;Zener >50V; 100V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N4764A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 97.6 .MODEL DF D ( IS=4.12p RS=0.620 N=1.10 + CJO=24.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=56.8 N=3.00 ) .ENDS *SRC=1N5221B;DI_1N5221B;Diodes;Zener <=10V; 2.40V 0.500W DIODES INC ZENER *SYM=HZEN .SUBCKT DI_1N5221B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=85.8p RS=2.47m N=1.10 + CJO=388p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=17.2f RS=26.1 N=3.00 ) .ENDS *SRC=1N5231B;DI_1N5231B;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_1N5231B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.62 .MODEL DF D ( IS=40.4p RS=2.32 N=1.10 + CJO=94.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=13.1 N=3.00 ) .ENDS *SRC=1N5233B;DI_1N5233B;Diodes;Zener <=10V; 6.00V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N5233B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.11 .MODEL DF D ( IS=34.3p RS=1.24 N=1.10 + CJO=74.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=0.460 N=1.19 ) .ENDS *SRC=1N5235B;DI_1N5235B;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N5235B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.56 .MODEL DF D ( IS=30.3p RS=1.24 N=1.10 + CJO=61.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=1.15 N=2.97 ) .ENDS *SRC=1N5239B;DI_1N5239B;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N5239B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.72 .MODEL DF D ( IS=22.6p RS=2.24 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=6.11 N=3.00 ) .ENDS *SRC=1N5241B;DI_1N5241B;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_1N5241B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.12 .MODEL DF D ( IS=18.7p RS=1.24 N=1.10 + CJO=58.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=0.949 N=2.45 ) .ENDS *SRC=AZ23C10;DI_AZ23C10;Diodes;Zener <=10V; 10.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.35 .MODEL DF D ( IS=12.4p RS=31.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) *SRC=AZ23C10W;DI_AZ23C10W;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C10W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.32 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=3.45 N=2.23 ) *SRC=AZ23C11;DI_AZ23C11;Diodes;Zener 10V-50V; 11.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.79 .MODEL DF D ( IS=11.2p RS=31.3 N=1.10 + CJO=41.5p VJ=1.00 M=0.330 TT=50.1n ) *SRC=AZ23C12;DI_AZ23C12;Diodes;Zener 10V-50V; 12.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.78 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=39.0p VJ=1.00 M=0.330 TT=50.1n ) *SRC=AZ23C13;DI_AZ23C13;Diodes;Zener 10V-50V; 13.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=9.51p RS=30.8 N=1.10 + CJO=37.7p VJ=1.00 M=0.330 TT=50.1n ) *SRC=AZ23C15;DI_AZ23C15;Diodes;Zener 10V-50V; 15.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) *SRC=AZ23C16;DI_AZ23C16;Diodes;Zener 10V-50V; 16.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=7.72p RS=30.2 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) *SRC=AZ23C18;DI_AZ23C18;Diodes;Zener 10V-50V; 18.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) *SRC=AZ23C18W;DI_AZ23C18W;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C18W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.5 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=34.5 N=3.00 ) *SRC=AZ23C20;DI_AZ23C20;Diodes;Zener 10V-50V; 20.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) *SRC=AZ23C22;DI_AZ23C22;Diodes;Zener 10V-50V; 22.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=AZ23C24;DI_AZ23C24;Diodes;Zener 10V-50V; 24.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) *SRC=AZ23C27;DI_AZ23C27;Diodes;Zener 10V-50V; 27.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C27 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.4 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=20.7p VJ=1.00 M=0.330 TT=50.1n ) *SRC=AZ23C2V7;DI_AZ23C2V7;Diodes;Zener <=10V; 2.70V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C2V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.263 .MODEL DF D ( IS=45.8p RS=35.3 N=1.10 + CJO=450p VJ=0.750 M=0.330 TT=50.1n ) *SRC=AZ23C30;DI_AZ23C30;Diodes;Zener 10V-50V; 30.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C30 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.4 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=19.5p VJ=1.00 M=0.330 TT=50.1n ) *SRC=AZ23C33;DI_AZ23C33;Diodes;Zener 10V-50V; 33.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) *SRC=AZ23C36;DI_AZ23C36;Diodes;Zener 10V-50V; 36.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.3 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=AZ23C39;DI_AZ23C39;Diodes;Zener 10V-50V; 39.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C39 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.3 .MODEL DF D ( IS=3.17p RS=27.7 N=1.10 + CJO=17.0p VJ=1.00 M=0.330 TT=50.1n ) *SRC=AZ23C3V0;DI_AZ23C3V0;Diodes;Zener <=10V; 3.00V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C3V0 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.495 .MODEL DF D ( IS=41.2p RS=35.0 N=1.10 + CJO=417p VJ=0.750 M=0.330 TT=50.1n ) *SRC=AZ23C3V3;DI_AZ23C3V3;Diodes;Zener <=10V; 3.30V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C3V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.787 .MODEL DF D ( IS=37.5p RS=34.7 N=1.10 + CJO=397p VJ=0.750 M=0.330 TT=50.1n ) *SRC=AZ23C3V6;DI_AZ23C3V6;Diodes;Zener <=10V; 3.60V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C3V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.08 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) *SRC=AZ23C3V9;DI_AZ23C3V9;Diodes;Zener <=10V; 3.60V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C3V9 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.08 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=370p VJ=0.750 M=0.330 TT=50.1n ) *SRC=AZ23C43;DI_AZ23C43;Diodes;Zener 10V-50V; 43.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.3 .MODEL DF D ( IS=2.87p RS=27.4 N=1.10 + CJO=16.7p VJ=1.00 M=0.330 TT=50.1n ) *SRC=AZ23C47;DI_AZ23C47;Diodes;Zener 10V-50V; 47.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C47 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 44.3 .MODEL DF D ( IS=2.63p RS=27.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) *SRC=AZ23C4V3;DI_AZ23C4V3;Diodes;Zener <=10V; 4.30V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C4V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.77 .MODEL DF D ( IS=28.7p RS=34.0 N=1.10 + CJO=357p VJ=0.750 M=0.330 TT=50.1n ) *SRC=AZ23C4V7;DI_AZ23C4V7;Diodes;Zener <=10V; 4.70V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C4V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.24 .MODEL DF D ( IS=26.3p RS=33.7 N=1.10 + CJO=350p VJ=0.750 M=0.330 TT=50.1n ) *SRC=AZ23C51;DI_AZ23C51;Diodes;Zener >50V; 51.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C51 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.2 .MODEL DF D ( IS=2.42p RS=26.9 N=1.10 + CJO=16.2p VJ=1.00 M=0.330 TT=50.1n ) *SRC=AZ23C5V1;DI_AZ23C5V1;Diodes;Zener <=10V; 5.10V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C5V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.73 .MODEL DF D ( IS=24.2p RS=33.5 N=1.10 + CJO=132p VJ=0.750 M=0.330 TT=50.1n ) *SRC=AZ23C5V6;DI_AZ23C5V6;Diodes;Zener <=10V; 5.60V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.32 .MODEL DF D ( IS=22.1p RS=33.2 N=1.10 + CJO=102p VJ=0.750 M=0.330 TT=50.1n ) *SRC=AZ23C5V6W;DI_AZ23C5V6W;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C5V6W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=102p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=24.5 N=3.00 ) *SRC=AZ23C6V2;DI_AZ23C6V2;Diodes;Zener <=10V; 6.20V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.12 .MODEL DF D ( IS=19.9p RS=32.9 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) *SRC=AZ23C6V8;DI_AZ23C6V8;Diodes;Zener <=10V; 6.80V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.93 .MODEL DF D ( IS=18.2p RS=32.7 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) *SRC=AZ23C6V8W;DI_AZ23C6V8W;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C6V8W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=3.45 N=2.23 ) *SRC=AZ23C7V5;DI_AZ23C7V5;Diodes;Zener <=10V; 7.50V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.74 .MODEL DF D ( IS=16.5p RS=32.4 N=1.10 + CJO=59.5p VJ=0.750 M=0.330 TT=50.1n ) *SRC=AZ23C8V2;DI_AZ23C8V2;Diodes;Zener <=10V; 8.20V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=15.1p RS=32.1 N=1.10 + CJO=54.2p VJ=0.750 M=0.330 TT=50.1n ) *SRC=AZ23C9V1;DI_AZ23C9V1;Diodes;Zener <=10V; 9.10V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_AZ23C9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.00 .MODEL DF D ( IS=13.6p RS=31.8 N=1.10 + CJO=48.9p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZT52C10;DI_BZT52C10;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.84 .MODEL DF D ( IS=20.6p RS=1.22 N=1.10 + CJO=45.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=4.60 N=2.97 ) .ENDS *SRC=BZT52C10S;DI_BZT52C10S;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C10S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.76 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZT52C11;DI_BZT52C11;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.83 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=44.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=4.60 N=2.97 *SRC=BZT52C11S;DI_BZT52C11S;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C11S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.76 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=44.0p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZT52C12;DI_BZT52C12;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.78 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=9.46 N=3.00 *SRC=BZT52C12S;DI_BZT52C12S;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C12S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZT52C13;DI_BZT52C13;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.4 .MODEL DF D ( IS=15.8p RS=1.24 N=1.10 + CJO=51.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=1.26 N=0.814 ) .ENDS *SRC=BZT52C13S;DI_BZT52C13S;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C13S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=25.8p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZT52C15;DI_BZT52C15;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=14.5 N=3.00 *SRC=BZT52C15S;DI_BZT52C15S;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C15S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=25.5p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZT52C16;DI_BZT52C16;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=24.5 N=3.00 *SRC=BZT52C16S;DI_BZT52C16S;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C16S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=25.4p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZT52C18;DI_BZT52C18;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=29.5 N=3.00 ********************************************************************************************************************************** *SRC=BZT52C18S;DI_BZT52C18S;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C18S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=25.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 ) .ENDS ********************************************************************************************************************************* *SRC=BZT52C20;DI_BZT52C20;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=39.5 N=3.00 *SRC=BZT52C20S;DI_BZT52C20S;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C20S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZT52C22;DI_BZT52C22;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=39.5 N=3.00 *SRC=BZT52C22S;DI_BZT52C22S;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C22S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZT52C24;DI_BZT52C24;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.5 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=54.5 N=3.00 *SRC=BZT52C24S;DI_BZT52C24S;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C24S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZT52C27;DI_BZT52C27;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C27 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=41.1 N=3.00 *SRC=BZT52C27S;DI_BZT52C27S;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C27S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZT52C2V0;DI_BZT52C2V0;Diodes;Zener <=10V; 2.00V 0.500W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZT52C2V0 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=103p RS=37.6 N=1.10 + CJO=516p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=20.6f RS=84.5 N=3.00 *SRC=BZT52C2V0S;DI_BZT52C2V0S;Diodes;Zener <=10V; 2.00V 0.200W Diodes Inc. 200 mW Zener *SYM=HZEN .SUBCKT DI_BZT52C2V0S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=41.2p RS=35.0 N=1.10 + CJO=503p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZT52C2V4;DI_BZT52C2V4;Diodes;Zener <=10V; 2.40V 0.500W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZT52C2V4 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=85.8p RS=37.1 N=1.10 + CJO=461p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=17.2f RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C2V4S;DI_BZT52C2V4S;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. 200 mW Zener *SYM=HZEN .SUBCKT DI_BZT52C2V4S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=460p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZT52C2V7;DI_BZT52C2V7;Diodes;Zener <=10V; 2.70V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C2V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.217 .MODEL DF D ( IS=76.3p RS=36.7 N=1.10 + CJO=461p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=15.3f RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C2V7S;DI_BZT52C2V7S;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. 200 mW Zener *SYM=HZEN .SUBCKT DI_BZT52C2V7S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.146 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=410p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZT52C30;DI_BZT52C30;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C30 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.7 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=41.1 N=3.00 *SRC=BZT52C30S;DI_BZT52C30S;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C30S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.7 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZT52C33;DI_BZT52C33;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.7 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.25f RS=41.1 N=3.00 *SRC=BZT52C33S;DI_BZT52C33S;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C33S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.7 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZT52C36;DI_BZT52C36;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.7 .MODEL DF D ( IS=5.72p RS=1.27 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=51.1 N=3.00 ) .ENDS *SRC=BZT52C36S;DI_BZT52C36S;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C36S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.7 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=17.3p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZT52C39;DI_BZT52C39;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C39 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.6 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.06f RS=91.1 N=3.00 *SRC=BZT52C39S;DI_BZT52C39S;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C39S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZT52C3V0;DI_BZT52C3V0;Diodes;Zener <=10V; 3.00V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V0 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.534 .MODEL DF D ( IS=68.7p RS=36.4 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=13.7f RS=79.5 N=3.00 ) .ENDS *SRC=BZT52C3V0S;DI_BZT52C3V0S;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. 200 mW Zener *SYM=HZEN .SUBCKT DI_BZT52C3V0S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.463 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=403p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZT52C3V3;DI_BZT52C3V3;Diodes;Zener <=10V; 3.30V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.827 .MODEL DF D ( IS=62.4p RS=36.2 N=1.10 + CJO=403p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.5f RS=79.5 N=3.00 *SRC=BZT52C3V3S;DI_BZT52C3V3S;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C3V3S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.756 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=403p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZT52C3V6;DI_BZT52C3V6;Diodes;Zener <=10V; 3.60V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.15 .MODEL DF D ( IS=57.2p RS=35.9 N=1.10 + CJO=390p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=11.4f RS=74.5 N=3.00 *SRC=BZT52C3V6S;DI_BZT52C3V6S;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C3V6S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.07 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=390p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZT52C3V9;DI_BZT52C3V9;Diodes;Zener <=10V; 3.90V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C3V9 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.44 .MODEL DF D ( IS=52.8p RS=35.7 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.6f RS=74.5 N=3.00 ******************************************************************************************************************************** *SRC=BZT52C3V9S;DI_BZT52C3V9S;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C3V9S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.37 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23f RS=74.5 N=3.00 ) .ENDS ******************************************************************************************************************************** *SRC=BZT52C43;DI_BZT52C43;Diodes;Zener 10V-50V; 43.0V 0.410W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.3 .MODEL DF D ( IS=3.93p RS=1.51 N=1.10 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.86e-016 RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C47;DI_BZT52C47;Diodes;Zener 10V-50V; 47.0V 0.410W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C47 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 44.3 .MODEL DF D ( IS=3.59p RS=1.48 N=1.10 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.19e-016 RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C4V3;DI_BZT52C4V3;Diodes;Zener <=10V; 4.30V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C4V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.83 .MODEL DF D ( IS=47.9p RS=35.4 N=1.10 + CJO=370p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58f RS=74.5 N=3.00 *SRC=BZT52C4V3S;DI_BZT52C4V3S;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C4V3S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.76 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=370p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZT52C4V7;DI_BZT52C4V7;Diodes;Zener <=10V; 4.70V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C4V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.27 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10 + CJO=357p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.77f RS=64.5 N=3.00 *SRC=BZT52C4V7S;DI_BZT52C4V7S;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C4V7S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.20 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=357p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZT52C51;DI_BZT52C51;Diodes;Zener >50V; 51.0V 0.410W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_BZT52C51 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.3 .MODEL DF D ( IS=3.31p RS=1.45 N=1.10 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.62e-016 RS=84.5 N=3.00 ) .ENDS *SRC=BZT52C5V1;DI_BZT52C5V1;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C5V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.77 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=44.5 N=3.00 *SRC=BZT52C5V1S;DI_BZT52C5V1S;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C5V1S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.70 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZT52C5V6;DI_BZT52C5V6;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.36 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=99.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=24.5 N=3.00 *SRC=BZT52C5V6S;DI_BZT52C5V6S;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C5V6S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=99.2p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZT52C6V2;DI_BZT52C6V2;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=2.30 N=1.49 *SRC=BZT52C6V2S;DI_BZT52C6V2S;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C6V2S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.10 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZT52C6V8;DI_BZT52C6V8;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.20 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=3.45 N=2.23 *SRC=BZT52C6V8S;DI_BZT52C6V8S;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C6V8S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZT52C7V5;DI_BZT52C7V5;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.89 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=3.45 N=2.23 *SRC=BZT52C7V5S;DI_BZT52C7V5S;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C7V5S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.84 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=54.2p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZT52C8V2;DI_BZT52C8V2;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.59 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=38.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=3.45 N=2.23 ) .ENDS *SRC=BZT52C8V2S;DI_BZT52C8V2S;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C8V2S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.53 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=51.6p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZT52C9V1;DI_BZT52C9V1;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZT52C9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.48 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=35.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=3.45 N=2.23 ) .ENDS *SRC=BZT52C9V1S;DI_BZT52C9V1S;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZT52C9V1S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=48.9p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C10;DI_BZX84C10;Diodes;Zener <=10V; 10.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.81 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.88f RS=4.60 N=2.97 ) .ENDS *SRC=BZX84C10S;DI_BZX84C10S;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C10S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.76 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C10T;DI_BZX84C10T;Diodes;Zener <=10V; 10.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C10T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.74 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C10TS;DI_BZX84C10TS;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C10TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.76 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C10W;DI_BZX84C10W;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C10W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.76 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C11;DI_BZX84C11;Diodes;Zener 10V-50V; 11.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.80 .MODEL DF D ( IS=13.1p RS=31.7 N=1.10 + CJO=45.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.62f RS=4.60 N=2.97 ) .ENDS *SRC=BZX84C11S;DI_BZX84C11S;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C11S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.76 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=45.1p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C11T;DI_BZX84C11T;Diodes;Zener 10V-50V; 11.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C11T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.74 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10 + CJO=45.1p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C11TS;DI_BZX84C11TS;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C11TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.76 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=45.1p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C11W;DI_BZX84C11W;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C11W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.76 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=45.1p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C12;DI_BZX84C12;Diodes;Zener 10V-50V; 12.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.75 .MODEL DF D ( IS=12.0p RS=31.5 N=1.10 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.40f RS=9.46 N=3.00 ) .ENDS *SRC=BZX84C12S;DI_BZX84C12S;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C12S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=42.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C12T;DI_BZX84C12T;Diodes;Zener 10V-50V; 12.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C12T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.68 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=42.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C12TS;DI_BZX84C12TS;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C12TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=42.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C12W;DI_BZX84C12W;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C12W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=42.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C13;DI_BZX84C13;Diodes;Zener 10V-50V; 13.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=11.1p RS=31.3 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.22f RS=14.5 N=3.00 ) .ENDS *SRC=BZX84C13S;DI_BZX84C13S;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C13S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C13T;DI_BZX84C13T;Diodes;Zener 10V-50V; 13.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C13T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=4.75p RS=28.8 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C13TS;DI_BZX84C13TS;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C13TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C13W;DI_BZX84C13W;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C13W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C15;DI_BZX84C15;Diodes;Zener 10V-50V; 15.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=9.61p RS=30.8 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.92f RS=14.5 N=3.00 ) .ENDS *SRC=BZX84C15S;DI_BZX84C15S;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C15S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C15T;DI_BZX84C15T;Diodes;Zener 10V-50V; 15.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C15T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C15TS;DI_BZX84C15TS;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C15TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C15W;DI_BZX84C15W;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C15W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C16;DI_BZX84C16;Diodes;Zener 10V-50V; 16.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=9.01p RS=30.7 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.80f RS=24.5 N=3.00 ) .ENDS *SRC=BZX84C16S;DI_BZX84C16S;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C16S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C16T;DI_BZX84C16T;Diodes;Zener 10V-50V; 16.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C16T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=3.86p RS=28.2 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C16TS;DI_BZX84C16TS;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C16TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C16W;DI_BZX84C16W;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C16W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C18;DI_BZX84C18;Diodes;Zener 10V-50V; 18.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=8.01p RS=30.3 N=1.10 + CJO=33.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.60f RS=29.5 N=3.00 ) .ENDS *SRC=BZX84C18S;DI_BZX84C18S;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C18S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=33.4p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C18T;DI_BZX84C18T;Diodes;Zener 10V-50V; 18.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C18T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=33.4p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C18TS;DI_BZX84C18TS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C18TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=33.4p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C18W;DI_BZX84C18W;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C18W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=33.4p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C20;DI_BZX84C20;Diodes;Zener 10V-50V; 20.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=7.21p RS=30.0 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.44f RS=39.5 N=3.00 ) .ENDS *SRC=BZX84C20S;DI_BZX84C20S;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C20S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C20T;DI_BZX84C20T;Diodes;Zener 10V-50V; 20.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C20T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=3.09p RS=27.6 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C20TS;DI_BZX84C20TS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C20TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C20W;DI_BZX84C20W;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C20W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C22;DI_BZX84C22;Diodes;Zener 10V-50V; 22.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=6.55p RS=29.8 N=1.10 + CJO=30.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.31f RS=39.5 N=3.00 ) .ENDS *SRC=BZX84C22S;DI_BZX84C22S;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C22S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=30.0p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C22T;DI_BZX84C22T;Diodes;Zener 10V-50V; 22.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C22T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=2.81p RS=27.3 N=1.10 + CJO=30.0p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C22TS;DI_BZX84C22TS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C22TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=30.0p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C22W;DI_BZX84C22W;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C22W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=30.0p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C24;DI_BZX84C24;Diodes;Zener 10V-50V; 24.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.5 .MODEL DF D ( IS=6.01p RS=29.5 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.20f RS=54.5 N=3.00 ) .ENDS *SRC=BZX84C24S;DI_BZX84C24S;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C24S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C24T;DI_BZX84C24T;Diodes;Zener 10V-50V; 24.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C24T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=2.57p RS=27.1 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C24TS;DI_BZX84C24TS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C24TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C24W;DI_BZX84C24W;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C24W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C27;DI_BZX84C27;Diodes;Zener 10V-50V; 27.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C27 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.4 .MODEL DF D ( IS=5.34p RS=29.2 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.07f RS=64.5 N=3.00 ) .ENDS *SRC=BZX84C27S;DI_BZX84C27S;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C27S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C27T;DI_BZX84C27T;Diodes;Zener 10V-50V; 27.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C27T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C27TS;DI_BZX84C27TS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C27TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C27W;DI_BZX84C27W;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C27W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.7 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C2V4;DI_BZX84C2V4;Diodes;Zener <=10V; 2.40V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C2V4 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=60.1p RS=36.1 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.0f RS=84.5 N=3.00 ) .ENDS *SRC=BZX84C2V4S;DI_BZX84C2V4S;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C2V4S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C2V4T;DI_BZX84C2V4T;Diodes;Zener <=10V; 2.40V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C2V4T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C2V4TS;DI_BZX84C2V4TS;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C2V4TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C2V4W;DI_BZX84C2V4W;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C2V4W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C2V7;DI_BZX84C2V7;Diodes;Zener <=10V; 2.70V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C2V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.190 .MODEL DF D ( IS=53.4p RS=35.7 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.7f RS=84.5 N=3.00 ) .ENDS *SRC=BZX84C2V7S;DI_BZX84C2V7S;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C2V7S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.146 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C2V7T;DI_BZX84C2V7T;Diodes;Zener <=10V; 2.70V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C2V7T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.124 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C2V7TS;DI_BZX84C2V7TS;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C2V7TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.146 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C2V7W;DI_BZX84C2V7W;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C2V7W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.146 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C30;DI_BZX84C30;Diodes;Zener 10V-50V; 30.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C30 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.4 .MODEL DF D ( IS=4.81p RS=28.9 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.61e-016 RS=64.5 N=3.00 ) .ENDS *SRC=BZX84C30S;DI_BZX84C30S;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C30S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.7 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C30T;DI_BZX84C30T;Diodes;Zener 10V-50V; 30.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C30T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.06p RS=26.5 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C30TS;DI_BZX84C30TS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C30TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.7 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C30W;DI_BZX84C30W;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C30W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.7 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C33;DI_BZX84C33;Diodes;Zener 10V-50V; 33.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=4.37p RS=28.6 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.74e-016 RS=64.5 N=3.00 ) .ENDS *SRC=BZX84C33S;DI_BZX84C33S;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C33S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.7 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C33T;DI_BZX84C33T;Diodes;Zener 10V-50V; 33.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C33T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=1.87p RS=26.2 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C33TS;DI_BZX84C33TS;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C33TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.7 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C33W;DI_BZX84C33W;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C33W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.7 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C36;DI_BZX84C36;Diodes;Zener 10V-50V; 36.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.3 .MODEL DF D ( IS=4.01p RS=28.4 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.01e-016 RS=74.5 N=3.00 ) .ENDS *SRC=BZX84C36S;DI_BZX84C36S;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C36S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.6 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C36T;DI_BZX84C36T;Diodes;Zener >50V; 536V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C36T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 533 .MODEL DF D ( IS=115f RS=18.2 N=1.10 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C36TS;DI_BZX84C36TS;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C36TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.6 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C36W;DI_BZX84C36W;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C36W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.6 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C39;DI_BZX84C39;Diodes;Zener 10V-50V; 39.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C39 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.1 .MODEL DF D ( IS=3.70p RS=28.1 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39e-016 RS=114 N=3.00 ) .ENDS *SRC=BZX84C39S;DI_BZX84C39S;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C39S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C39T;DI_BZX84C39T;Diodes;Zener 10V-50V; 39.0V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C39T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=1.58p RS=25.7 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C39TS;DI_BZX84C39TS;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C39TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C39W;DI_BZX84C39W;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C39W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n ) *SRC=BZX84C3V0;DI_BZX84C3V0;Diodes;Zener <=10V; 3.00V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C3V0 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.507 .MODEL DF D ( IS=48.1p RS=35.4 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.61f RS=79.5 N=3.00 ) .ENDS *SRC=BZX84C3V0S;DI_BZX84C3V0S;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V0S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.463 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C3V0T;DI_BZX84C3V0T;Diodes;Zener <=10V; 3.00V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V0T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.441 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C3V0TS;DI_BZX84C3V0TS;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V0TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.463 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C3V0W;DI_BZX84C3V0W;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V0W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.463 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C3V3;DI_BZX84C3V3;Diodes;Zener <=10V; 3.30V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C3V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.799 .MODEL DF D ( IS=43.7p RS=35.2 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.74f RS=79.5 N=3.00 ) .ENDS *SRC=BZX84C3V3S;DI_BZX84C3V3S;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V3S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.756 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C3V3T;DI_BZX84C3V3T;Diodes;Zener <=10V; 3.30V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V3T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.733 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C3V3TS;DI_BZX84C3V3TS;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V3TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.756 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C3V3W;DI_BZX84C3V3W;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V3W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.756 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C3V6;DI_BZX84C3V6;Diodes;Zener <=10V; 3.60V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C3V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.12 .MODEL DF D ( IS=40.1p RS=34.9 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.01f RS=74.5 N=3.00 ) .ENDS *SRC=BZX84C3V6S;DI_BZX84C3V6S;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V6S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.07 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C3V6T;DI_BZX84C3V6T;Diodes;Zener <=10V; 3.60V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V6T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.05 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C3V6TS;DI_BZX84C3V6TS;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V6TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.07 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C3V6W;DI_BZX84C3V6W;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V6W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.07 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C3V9;DI_BZX84C3V9;Diodes;Zener <=10V; 3.90V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C3V9 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.41 .MODEL DF D ( IS=37.0p RS=34.7 N=1.10 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39f RS=74.5 N=3.00 ) .ENDS *SRC=BZX84C3V9S;DI_BZX84C3V9S;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V9S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.37 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=94.1p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C3V9T;DI_BZX84C3V9T;Diodes;Zener <=10V; 3.90V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V9T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.35 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=94.1p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C3V9TS;DI_BZX84C3V9TS;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C3V9TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.37 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=94.1p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C3V9W;DI_BZX84C3V9W;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C3V9W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.37 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=94.1p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C43;DI_BZX84C43;Diodes;Zener 10V-50V; 43.0V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.0 .MODEL DF D ( IS=3.35p RS=27.8 N=1.10 + CJO=22.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.71e-016 RS=134 N=3.00 ) .ENDS *SRC=BZX84C47;DI_BZX84C47;Diodes;Zener 10V-50V; 47.0V 0.350W Diodes Inc. - *SYM=HZEN .SUBCKT DI_BZX84C47 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 43.9 .MODEL DF D ( IS=3.07p RS=27.6 N=1.10 + CJO=22.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.14e-016 RS=154 N=3.00 ) .ENDS *SRC=BZX84C4V3;DI_BZX84C4V3;Diodes;Zener <=10V; 4.30V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C4V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.80 .MODEL DF D ( IS=33.5p RS=34.4 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.71f RS=74.5 N=3.00 ) .ENDS *SRC=BZX84C4V3S;DI_BZX84C4V3S;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C4V3S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.76 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C4V3T;DI_BZX84C4V3T;Diodes;Zener <=10V; 4.30V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C4V3T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.74 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C4V3TS;DI_BZX84C4V3TS;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C4V3TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.76 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C4V3W;DI_BZX84C4V3W;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C4V3W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.76 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C4V7;DI_BZX84C4V7;Diodes;Zener <=10V; 4.70V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C4V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.25 .MODEL DF D ( IS=30.7p RS=34.2 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.14f RS=64.5 N=3.00 ) .ENDS *SRC=BZX84C4V7S;DI_BZX84C4V7S;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C4V7S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.20 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C4V7T;DI_BZX84C4V7T;Diodes;Zener <=10V; 4.70V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C4V7T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.18 .MODEL DF D ( IS=13.1p RS=31.7 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C4V7TS;DI_BZX84C4V7TS;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C4V7TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.20 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C4V7W;DI_BZX84C4V7W;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C4V7W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.20 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n ) *SRC=bzx84c51;DI_BZX84C51;Diodes;Zener >50V; 51.0V 0.350W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_BZX84C51 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.5 .MODEL DF D ( IS=2.83p RS=1.77 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.65e-016 RS=141 N=3.00 ) .ENDS *SRC=BZX84C5V1;DI_BZX84C5V1;Diodes;Zener <=10V; 5.10V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C5V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.74 .MODEL DF D ( IS=28.3p RS=33.9 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.65f RS=44.5 N=3.00 ) .ENDS *SRC=BZX84C5V1S;DI_BZX84C5V1S;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C5V1S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.70 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C5V1T;DI_BZX84C5V1T;Diodes;Zener <=10V; 5.10V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C5V1T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.67 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C5V1TS;DI_BZX84C5V1TS;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C5V1TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.70 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C5V1W;DI_BZX84C5V1W;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C5V1W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.70 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C5V6;DI_BZX84C5V6;Diodes;Zener <=10V; 5.60V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.33 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=24.5 N=3.00 ) .ENDS *SRC=BZX84C5V6S;DI_BZX84C5V6S;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C5V6S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C5V6T;DI_BZX84C5V6T;Diodes;Zener <=10V; 5.60V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C5V6T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.27 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C5V6TS;DI_BZX84C5V6TS;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C5V6TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C5V6W;DI_BZX84C5V6W;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C5V6W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C6V2;DI_BZX84C6V2;Diodes;Zener <=10V; 6.20V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.12 .MODEL DF D ( IS=23.3p RS=33.4 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.65f RS=2.30 N=1.49 ) .ENDS *SRC=BZX84C6V2S;DI_BZX84C6V2S;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C6V2S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.10 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C6V2T;DI_BZX84C6V2T;Diodes;Zener <=10V; 6.20V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C6V2T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.09 .MODEL DF D ( IS=9.97p RS=31.0 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C6V2TS;DI_BZX84C6V2TS;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C6V2TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.10 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C6V2W;DI_BZX84C6V2W;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C6V2W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.10 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C6V8;DI_BZX84C6V8;Diodes;Zener <=10V; 6.80V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.18 .MODEL DF D ( IS=21.2p RS=33.1 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.24f RS=3.45 N=2.23 ) .ENDS *SRC=BZX84C6V8S;DI_BZX84C6V8S;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C6V8S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) SRC=BZX84C6V8T;DI_BZX84C6V8T;Diodes;Zener <=10V; 6.80V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C6V8T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.13 .MODEL DF D ( IS=9.09p RS=30.7 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.82f RS=3.45 N=2.23 ) .ENDS *SRC=BZX84C6V8TS;DI_BZX84C6V8TS;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C6V8TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C6V8W;DI_BZX84C6V8W;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C6V8W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C7V5;DI_C;Diodes;Zener <=10V; 7.50V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.87 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.85f RS=3.45 N=2.23 ) .ENDS *SRC=BZX84C7V5S;DI_BZX84C7V5S;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C7V5S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.84 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C7V5T;DI_BZX84C7V5T;Diodes;Zener <=10V; 7.50V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C7V5T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.82 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C7V5TS;DI_BZX84C7V5TS;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C7V5TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.84 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C7V5W;DI_BZX84C7V5W;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C7V5W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.84 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C8V2;DI_BZX84C8V2;Diodes;Zener <=10V; 8.20V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.57 .MODEL DF D ( IS=17.6p RS=32.6 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.52f RS=3.45 N=2.23 ) .ENDS *SRC=BZX84C8V2S;DI_BZX84C8V2S;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C8V2S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.53 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C8V2T;DI_BZX84C8V2T;Diodes;Zener <=10V; 8.20V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C8V2T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.52 .MODEL DF D ( IS=7.54p RS=30.2 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C8V2TS;DI_BZX84C8V2TS;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C8V2TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.53 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C8V2W;DI_BZX84C8V2W;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C8V2W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.53 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C9V1;DI_BZX84C9V1;Diodes;Zener <=10V; 9.10V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_BZX84C9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.46 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=3.45 N=2.23 ) .ENDS *SRC=BZX84C9V1S;DI_BZX84C9V1S;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER Dual, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C9V1S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C9V1T;DI_BZX84C9V1T;Diodes;Zener <=10V; 9.10V 0.150W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C9V1T 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.41 .MODEL DF D ( IS=6.79p RS=29.9 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C9V1TS;DI_BZX84C9V1TS;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER Triple, Apply ea. node *SYM=HZEN .SUBCKT DI_BZX84C9V1TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) *SRC=BZX84C9V1W;DI_BZX84C9V1W;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_BZX84C9V1W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n ) *SRC=DDZ10C;DI_DDZ10C;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ10C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.65 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=4.11 N=3.00 ) .ENDS *SRC=DDZ10CS;DI_DDZ10CS;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ10CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.58 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=4.11 N=3.00 ) .ENDS *SRC=DDZ11C;DI_DDZ11C;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ11C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.77 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=2.30 N=2.97 ) .ENDS *SRC=DDZ11CS;DI_DDZ11CS;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ11CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.70 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=2.30 N=2.97 ) .ENDS *SRC=DDZ12C;DI_DDZ12C;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ12C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.73 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=4.23 N=3.00 ) .ENDS *SRC=DDZ12CS;DI_DDZ12CS;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ12CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.66 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=4.23 N=3.00 ) .ENDS *SRC=DDZ13B;DI_DDZ13B;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ13B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=6.23 N=3.00 ) .ENDS *SRC=DDZ13BS;DI_DDZ13BS;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ13BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.6 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=6.23 N=3.00 ) .ENDS *SRC=DDZ14;DI_DDZ14;Diodes;Zener 10V-50V; 14.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ14 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=8.23 N=3.00 ) .ENDS *SRC=DDZ14S;DI_DDZ14S;Diodes;Zener 10V-50V; 14.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ14S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.6 .MODEL DF D ( IS=5.89p RS=29.4 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.18f RS=8.23 N=3.00 ) .ENDS *SRC=DDZ15;DI_DDZ15;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=10.2 N=3.00 ) .ENDS *SRC=DDZ15S;DI_DDZ15S;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ15S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=10.2 N=3.00 ) .ENDS *SRC=DDZ16;DI_DDZ16;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=10.2 N=3.00 ) .ENDS *SRC=DDZ16S;DI_DDZ16S;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ16S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=10.2 N=3.00 ) .ENDS *SRC=DDZ18C;DI_DDZ18C;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ18C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=15.2 N=3.00 ) .ENDS *SRC=DDZ18CS;DI_DDZ18CS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ18CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.5 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=15.2 N=3.00 ) .ENDS *SRC=DDZ20C;DI_DDZ20C;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ20C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=20.2 N=3.00 ) .ENDS *SRC=DDZ20CS;DI_DDZ20CS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ20CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=20.2 N=3.00 ) .ENDS *SRC=DDZ22D;DI_DDZ22D;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ22D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=14.5 N=3.00 ) .ENDS *SRC=DDZ22DS;DI_DDZ22DS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ22DS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=14.5 N=3.00 ) .ENDS *SRC=DDZ24C;DI_DDZ24C;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ24C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.7 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=19.5 N=3.00 ) .ENDS *SRC=DDZ24CS;DI_DDZ24CS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ24CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=19.5 N=3.00 ) .ENDS *SRC=DDZ27D;DI_DDZ27D;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ27D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=29.5 N=3.00 ) .ENDS *SRC=DDZ27DS;DI_DDZ27DS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ27DS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.5 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=29.5 N=3.00 ) .ENDS *SRC=DDZ30D;DI_DDZ30D;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ30D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=39.5 N=3.00 ) .ENDS *SRC=DDZ30DS;DI_DDZ30DS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ30DS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.5 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=39.5 N=3.00 ) .ENDS *SRC=DDZ33;DI_DDZ33;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.25f RS=59.5 N=3.00 ) .ENDS *SRC=DDZ33S;DI_DDZ33S;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ33S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=59.5 N=3.00 ) .ENDS *SRC=DDZ36;DI_DDZ36;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.4 .MODEL DF D ( IS=5.72p RS=29.4 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=69.5 N=3.00 ) .ENDS *SRC=DDZ36S;DI_DDZ36S;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ36S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.3 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=69.5 N=3.00 ) .ENDS *SRC=DDZ39F;DI_DDZ39F;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ39F 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.4 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.06f RS=69.5 N=3.00 ) .ENDS *SRC=DDZ39FS;DI_DDZ39FS;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ39FS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.3 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=69.5 N=3.00 ) .ENDS *SRC=DDZ43;DI_DDZ43;Diodes;Zener 10V-50V; 43.0V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.4 .MODEL DF D ( IS=4.79p RS=28.9 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58e-016 RS=74.5 N=3.00 ) .ENDS *SRC=DDZ43S;DI_DDZ43S;Diodes;Zener 10V-50V; 43.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ43S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.3 .MODEL DF D ( IS=1.92p RS=26.3 N=1.10 + CJO=12.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83e-016 RS=74.5 N=3.00 ) .ENDS *SRC=DDZ47S;DI_DDZ47S;Diodes;Zener 10V-50V; 47.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ47S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 44.3 .MODEL DF D ( IS=1.75p RS=26.0 N=1.10 + CJO=12.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51e-016 RS=74.5 N=3.00 ) .ENDS *SRC=DDZ5V1B;DI_DDZ5V1B;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ5V1B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.62 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=13.1 N=3.00 ) .ENDS *SRC=DDZ5V1BS;DI_DDZ5V1BS;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ5V1BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.55 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=13.1 N=3.00 ) .ENDS *SRC=DDZ5V6B;DI_DDZ5V6B;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ5V6B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.23 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=7.11 N=3.00 ) .ENDS *SRC=DDZ5V6BS;DI_DDZ5V6BS;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ5V6BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.16 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=7.11 N=3.00 ) .ENDS *SRC=DDZ6V2B;DI_DDZ6V2B;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ6V2B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.91 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=80.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=3.11 N=3.00 ) .ENDS *SRC=DDZ6V2BS;DI_DDZ6V2BS;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ6V2BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.83 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=80.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=3.11 N=3.00 ) .ENDS *SRC=DDZ6V8C;DI_DDZ6V8C;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ6V8C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.56 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=1.15 N=2.97 ) .ENDS *SRC=DDZ6V8CS;DI_DDZ6V8CS;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ6V8CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.49 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=1.15 N=2.97 ) .ENDS *SRC=DDZ7V5C;DI_DDZ7V5C;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ7V5C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.21 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=2.12 N=3.00 ) .ENDS *SRC=DDZ7V5CS;DI_DDZ7V5CS;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ7V5CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=2.12 N=3.00 ) .ENDS *SRC=DDZ8V2C;DI_DDZ8V2C;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ8V2C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.86 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=4.11 N=3.00 ) .ENDS *SRC=DDZ8V2CS;DI_DDZ8V2CS;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ8V2CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.79 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=4.11 N=3.00 ) .ENDS *SRC=DDZ9688;DI_DDZ9688;Diodes;Zener <=10V; 4.70V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9688 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.63 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.77f RS=6.45k N=3.00 ) .ENDS *SRC=DDZ9688S;DI_DDZ9688S;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9688S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.56 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=6.45k N=3.00 ) .ENDS *SRC=DDZ9689;DI_DDZ9689;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9689 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.15 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08f RS=3.95k N=3.00 ) .ENDS *SRC=DDZ9689S;DI_DDZ9689S;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9689S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.08 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=3.95k N=3.00 ) .ENDS *SRC=DDZ9690;DI_DDZ9690;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9690 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.79 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.36f RS=946 N=3.00 ) .ENDS *SRC=DDZ9690S;DI_DDZ9690S;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9690S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.72 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=946 N=3.00 ) .ENDS *SRC=DDZ9691;DI_DDZ9691;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9691 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.31 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.65f RS=230 N=1.49 ) .ENDS *SRC=DDZ9691S;DI_DDZ9691S;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9691S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.28 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=230 N=1.49 ) .ENDS *SRC=DDZ9692;DI_DDZ9692;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9692 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.71 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=23.0 N=0.149 ) .ENDS *SRC=DDZ9692S;DI_DDZ9692S;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9692S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.71 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=23.0 N=0.149 ) .ENDS *SRC=DDZ9693;DI_DDZ9693;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9693 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.41 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=23.0 N=0.149 ) .ENDS *SRC=DDZ9693S;DI_DDZ9693S;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9693S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.41 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=23.0 N=0.149 ) .ENDS *SRC=DDZ9694;DI_DDZ9694;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9694 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.07 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.02f RS=34.5 N=0.223 ) .ENDS *SRC=DDZ9694S;DI_DDZ9694S;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9694S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.06 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=34.5 N=0.223 ) .ENDS *SRC=DDZ9696;DI_DDZ9696;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9696 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.90 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=50.6 N=0.327 ) .ENDS *SRC=DDZ9696S;DI_DDZ9696S;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9696S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.89 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=50.6 N=0.327 ) .ENDS *SRC=DDZ9697;DI_DDZ9697;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9697 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.73 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9697S;DI_DDZ9697S;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9697S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.72 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9698;DI_DDZ9698;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9698 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=35.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9699;DI_DDZ9699;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9699 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9699S;DI_DDZ9699S;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9699S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9700;DI_DDZ9700;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9700 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.17f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9700S;DI_DDZ9700S;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9700S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9701;DI_DDZ9701;Diodes;Zener 10V-50V; 14.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9701 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9702;DI_DDZ9702;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9702 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 14.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9702S;DI_DDZ9702S;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9702S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 14.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9703;DI_DDZ9703;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9703 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.58f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9703S;DI_DDZ9703S;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9703S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9705;DI_DDZ9705;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9705 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9705S;DI_DDZ9705S;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9705S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9707;DI_DDZ9707;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9707 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9707S;DI_DDZ9707S;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9707S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=69.0 N=0.446 ) .ENDS *SRC=DDZ9708;DI_DDZ9708;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9708 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.87f RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9708S;DI_DDZ9708S;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9708S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9709;DI_DDZ9709;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9709 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 23.6 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.72f RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9709S;DI_DDZ9709S;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9709S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 23.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9711;DI_DDZ9711;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9711 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 26.6 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.53f RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9711S;DI_DDZ9711S;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9711S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 26.6 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9712;DI_DDZ9712;Diodes;Zener 10V-50V; 28.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9712 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=7.36p RS=30.1 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.47f RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9712S;DI_DDZ9712S;Diodes;Zener 10V-50V; 28.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9712S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.94p RS=27.5 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.89e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9713;DI_DDZ9713;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9713 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 29.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9713S;DI_DDZ9713S;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9713S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 29.6 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZ9714;DI_DDZ9714;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9714 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 31.0 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.25f RS=1.35k N=3.00 ) .ENDS *SRC=DDZ9714S;DI_DDZ9714S;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9714S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 31.0 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=1.35k N=3.00 ) .ENDS *SRC=DDZ9715;DI_DDZ9715;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9715 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.9 .MODEL DF D ( IS=5.72p RS=29.4 N=1.10 + CJO=13.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.14f RS=4.45k N=3.00 ) .ENDS *SRC=DDZ9715S;DI_DDZ9715S;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9715S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 34.0 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=13.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=1.45k N=3.00 ) .ENDS *SRC=DDZ9716;DI_DDZ9716;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9716 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.9 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10 + CJO=24.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.06f RS=4.45k N=3.00 ) .ENDS *SRC=DDZ9716S;DI_DDZ9716S;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9716S 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.9 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=12.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=1.45k N=3.00 ) .ENDS *SRC=DDZ9717;DI_DDZ9717;Diodes;Zener 10V-50V; 43.0V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZ9717 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.8 .MODEL DF D ( IS=4.79p RS=28.9 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58e-016 RS=6.25k N=3.00 ) .ENDS *SRC=DDZ9V1C;DI_DDZ9V1C;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ9V1C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.76 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.53f RS=4.11 N=3.00 ) .ENDS *SRC=DDZ9V1CS;DI_DDZ9V1CS;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZ9V1CS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.68 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=4.11 N=3.00 ) .ENDS *SRC=DDZX10C;DI_DDZX10C;Diodes;Zener <=10V; 10.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX10C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.61 .MODEL DF D ( IS=12.4p RS=31.6 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.47f RS=4.11 N=3.00 ) .ENDS *SRC=DDZX10CTS;DI_DDZX10CTS;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX10CTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.58 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=4.11 N=3.00 ) .ENDS *SRC=DDZX10CW;DI_DDZX10CW;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX10CW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.58 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=4.11 N=3.00 ) .ENDS *SRC=DDZX11C;DI_DDZX11C;Diodes;Zener 10V-50V; 11.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX11C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.74 .MODEL DF D ( IS=11.2p RS=31.3 N=1.10 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.25f RS=2.30 N=2.97 ) .ENDS *SRC=DDZX11CTS;DI_DDZX11CTS;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX11CTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.70 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=2.30 N=2.97 ) .ENDS *SRC=DDZX11CW;DI_DDZX11CW;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX11CW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.70 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.50f RS=2.30 N=2.97 ) .ENDS *SRC=DDZX12C;DI_DDZX12C;Diodes;Zener 10V-50V; 12.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX12C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.69 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=4.23 N=3.00 ) .ENDS *SRC=DDZX12CTS;DI_DDZX12CTS;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX12CTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.66 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=4.23 N=3.00 ) .ENDS *SRC=DDZX12CW;DI_DDZX12CW;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX12CW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.66 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=4.23 N=3.00 ) .ENDS *SRC=DDZX13B;DI_DDZX13B;Diodes;Zener 10V-50V; 13.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX13B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=9.51p RS=30.8 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.90f RS=6.23 N=3.00 ) .ENDS *SRC=DDZX13BTS;DI_DDZX13BTS;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX13BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.6 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=6.23 N=3.00 ) .ENDS *SRC=DDZX13BW;DI_DDZX13BW;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX13BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.6 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=6.23 N=3.00 ) .ENDS *SRC=DDZX14;DI_DDZX14;Diodes;Zener 10V-50V; 14.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX14 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.6 .MODEL DF D ( IS=8.83p RS=30.6 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.77f RS=8.23 N=3.00 ) .ENDS *SRC=DDZX14TS;DI_DDZX14TS;Diodes;Zener 10V-50V; 14.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX14TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.6 .MODEL DF D ( IS=5.89p RS=29.4 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.18f RS=8.23 N=3.00 ) .ENDS *SRC=DDZX14W;DI_DDZX14W;Diodes;Zener 10V-50V; 14.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX14W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.6 .MODEL DF D ( IS=5.89p RS=29.4 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.18f RS=8.23 N=3.00 ) .ENDS *SRC=DDZX15;DI_DDZX15;Diodes;Zener 10V-50V; 15.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=10.2 N=3.00 ) .ENDS *SRC=DDZX15TS;DI_DDZX15TS;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX15TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=10.2 N=3.00 ) .ENDS *SRC=DDZX15W;DI_DDZX15W;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX15W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=10.2 N=3.00 ) .ENDS *SRC=DDZX16;DI_DDZX16;Diodes;Zener 10V-50V; 16.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=7.72p RS=30.2 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.55f RS=10.2 N=3.00 ) .ENDS *SRC=DDZX16TS;DI_DDZX16TS;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX16TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=10.2 N=3.00 ) .ENDS *SRC=DDZX16W;DI_DDZX16W;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX16W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=10.2 N=3.00 ) .ENDS *SRC=DDZX18C;DI_DDZX18C;Diodes;Zener 10V-50V; 18.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX18C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.5 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=15.2 N=3.00 ) .ENDS *SRC=DDZX18CTS;DI_DDZX18CTS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX18CTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.5 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=15.2 N=3.00 ) .ENDS *SRC=DDZX18CW;DI_DDZX18CW;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX18CW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.5 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=15.2 N=3.00 ) .ENDS *SRC=DDZX20C;DI_DDZX20C;Diodes;Zener 10V-50V; 20.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX20C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.24f RS=20.2 N=3.00 ) .ENDS *SRC=DDZX20CTS;DI_DDZX20CTS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX20CTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=20.2 N=3.00 ) .ENDS *SRC=DDZX20CW;DI_DDZX20CW;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX20CW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=20.2 N=3.00 ) .ENDS *SRC=DDZX22D;DI_DDZX22D;Diodes;Zener 10V-50V; 22.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX22D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.12f RS=14.5 N=3.00 ) .ENDS *SRC=DDZX22DTS;DI_DDZX22DTS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX22DTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=14.5 N=3.00 ) .ENDS *SRC=DDZX22DW;DI_DDZX22DW;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX22DW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=14.5 N=3.00 ) .ENDS *SRC=DDZX24C;DI_DDZX24C;Diodes;Zener 10V-50V; 24.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX24C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=19.5 N=3.00 ) .ENDS *SRC=DDZX24CTS;DI_DDZX24CTS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX24CTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=19.5 N=3.00 ) .ENDS *SRC=DDZX24CW;DI_DDZX24CW;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX24CW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=19.5 N=3.00 ) .ENDS *SRC=DDZX27D;DI_DDZX27D;Diodes;Zener 10V-50V; 27.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX27D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 ) .ENDS *SRC=DDZX27DTS;DI_DDZX27DTS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX27DTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.5 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=29.5 N=3.00 ) .ENDS *SRC=DDZX27DW;DI_DDZX27DW;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX27DW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.5 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=29.5 N=3.00 ) .ENDS *SRC=DDZX30D;DI_DDZX30D;Diodes;Zener 10V-50V; 30.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX30D 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 ) .ENDS *SRC=DDZX30DS;DI_DDZX30DS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX30DS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.5 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=39.5 N=3.00 ) .ENDS *SRC=DDZX30DW;DI_DDZX30DW;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX30DW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.5 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=39.5 N=3.00 ) .ENDS *SRC=DDZX33;DI_DDZX33;Diodes;Zener 10V-50V; 33.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=59.5 N=3.00 ) .ENDS *SRC=DDZX33TS;DI_DDZX33TS;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX33TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=59.5 N=3.00 ) .ENDS *SRC=DDZX33W;DI_DDZX33W;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX33W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=59.5 N=3.00 ) .ENDS *SRC=DDZX36;DI_DDZX36;Diodes;Zener 10V-50V; 36.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.4 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=69.5 N=3.00 ) .ENDS *SRC=DDZX36TS;DI_DDZX36TS;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX36TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.3 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=69.5 N=3.00 ) .ENDS *SRC=DDZX36W;DI_DDZX36W;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX36W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.3 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=69.5 N=3.00 ) .ENDS *SRC=DDZX39F;DI_DDZX39F;Diodes;Zener 10V-50V; 39.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX39F 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.3 .MODEL DF D ( IS=3.17p RS=27.7 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.34e-016 RS=69.5 N=3.00 ) .ENDS *SRC=DDZX39FTS;DI_DDZX39FTS;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX39FTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.3 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=69.5 N=3.00 ) .ENDS *SRC=DDZX39FW;DI_DDZX39FW;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX39FW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.3 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=69.5 N=3.00 ) .ENDS *SRC=DDZX43;DI_DDZX43;Diodes;Zener 10V-50V; 43.0V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.3 .MODEL DF D ( IS=2.87p RS=27.4 N=1.10 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.75e-016 RS=74.5 N=3.00 ) .ENDS *SRC=DDZX43TS;DI_DDZX43TS;Diodes;Zener 10V-50V; 43.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX43TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.3 .MODEL DF D ( IS=1.92p RS=26.3 N=1.10 + CJO=12.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83e-016 RS=74.5 N=3.00 ) .ENDS *SRC=DDZX43W;DI_DDZX43W;Diodes;Zener 10V-50V; 43.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX43W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.3 .MODEL DF D ( IS=1.92p RS=26.3 N=1.10 + CJO=12.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.83e-016 RS=74.5 N=3.00 ) .ENDS *SRC=DDZX47TS;DI_DDZX47TS;Diodes;Zener 10V-50V; 47.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX47TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 44.3 .MODEL DF D ( IS=1.75p RS=26.0 N=1.10 + CJO=12.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51e-016 RS=74.5 N=3.00 ) .ENDS *SRC=DDZX47W;DI_DDZX47W;Diodes;Zener 10V-50V; 47.0V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX47W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 44.3 .MODEL DF D ( IS=1.75p RS=26.0 N=1.10 + CJO=12.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51e-016 RS=74.5 N=3.00 ) .ENDS *SRC=DDZX5V1B;DI_DDZX5V1B;Diodes;Zener <=10V; 5.10V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX5V1B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.58 .MODEL DF D ( IS=24.2p RS=33.5 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.85f RS=13.1 N=3.00 ) .ENDS *SRC=DDZX5V1BTS;DI_DDZX5V1BTS;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX5V1BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.55 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=13.1 N=3.00 ) .ENDS *SRC=DDZX5V1BW;DI_DDZX5V1BW;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX5V1BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.55 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=13.1 N=3.00 ) .ENDS *SRC=DDZX5V6B;DI_DDZX5V6B;Diodes;Zener <=10V; 5.60V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX5V6B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.19 .MODEL DF D ( IS=22.1p RS=33.2 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.41f RS=7.11 N=3.00 ) .ENDS *SRC=DDZX5V6BTS;DI_DDZX5V6BTS;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX5V6BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.16 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=7.11 N=3.00 ) .ENDS *SRC=DDZX5V6BW;DI_DDZX5V6BW;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX5V6BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.16 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=7.11 N=3.00 ) .ENDS *SRC=DDZX6V2B;DI_DDZX6V2B;Diodes;Zener <=10V; 6.20V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX6V2B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.87 .MODEL DF D ( IS=19.9p RS=32.9 N=1.10 + CJO=80.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.99f RS=3.11 N=3.00 ) .ENDS *SRC=DDZX6V2BTS;DI_DDZX6V2BTS;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX6V2BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.83 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=80.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=3.11 N=3.00 ) .ENDS *SRC=DDZX6V2BW;DI_DDZX6V2BW;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX6V2BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.83 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=80.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=3.11 N=3.00 ) .ENDS *SRC=DDZX6V8C;DI_DDZX6V8C;Diodes;Zener <=10V; 6.80V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX6V8C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.52 .MODEL DF D ( IS=18.2p RS=32.7 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.64f RS=1.15 N=2.97 ) .ENDS *SRC=DDZX6V8CTS;DI_DDZX6V8CTS;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX6V8CTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.49 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=1.15 N=2.97 ) .ENDS *SRC=DDZX6V8CW;DI_DDZX6V8CW;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX6V8CW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.49 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=1.15 N=2.97 ) .ENDS *SRC=DDZX7V5C;DI_DDZX7V5C;Diodes;Zener <=10V; 7.50V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX7V5C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.17 .MODEL DF D ( IS=16.5p RS=32.4 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.30f RS=2.12 N=3.00 ) .ENDS *SRC=DDZX7V5CTS;DI_DDZX7V5CTS;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX7V5CTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=2.12 N=3.00 ) .ENDS *SRC=DDZX7V5CW;DI_DDZX7V5CW;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX7V5CW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.14 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=2.12 N=3.00 ) .ENDS *SRC=DDZX8V2C;DI_DDZX8V2C;Diodes;Zener <=10V; 8.20V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX8V2C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.82 .MODEL DF D ( IS=15.1p RS=32.1 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.01f RS=4.11 N=3.00 ) .ENDS *SRC=DDZX8V2CTS;DI_DDZX8V2CTS;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX8V2CTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.79 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=4.11 N=3.00 ) .ENDS *SRC=DDZX8V2CW;DI_DDZX8V2CW;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX8V2CW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.79 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=4.11 N=3.00 ) .ENDS *SRC=DDZX9688;DI_DDZX9688;Diodes;Zener <=10V; 4.70V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9688 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.59 .MODEL DF D ( IS=26.3p RS=33.7 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.26f RS=6.45k N=3.00 ) .ENDS *SRC=DDZX9688TS;DI_DDZX9688TS;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9688TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.56 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=6.45k N=3.00 ) .ENDS *SRC=DDZX9688W;DI_DDZX9688W;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9688W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.56 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.51f RS=6.45k N=3.00 ) .ENDS *SRC=DDZX9689;DI_DDZX9689;Diodes;Zener <=10V; 5.10V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9689 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.11 .MODEL DF D ( IS=24.2p RS=33.5 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.85f RS=3.95k N=3.00 ) .ENDS *SRC=DDZX9689TS;DI_DDZX9689TS;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9689TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.08 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=3.95k N=3.00 ) .ENDS *SRC=DDZX9689W;DI_DDZX9689W;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9689W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.08 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10 + CJO=119p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.23f RS=3.95k N=3.00 ) .ENDS *SRC=DDZX9690;DI_DDZX9690;Diodes;Zener <=10V; 5.60V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9690 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.75 .MODEL DF D ( IS=22.1p RS=33.2 N=1.10 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.41f RS=946 N=3.00 ) .ENDS *SRC=DDZX9690TS;DI_DDZX9690TS;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9690TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.72 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=946 N=3.00 ) .ENDS *SRC=DDZX9690W;DI_DDZX9690W;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9690W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.72 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.94f RS=946 N=3.00 ) .ENDS *SRC=DDZX9691;DI_DDZX9691;Diodes;Zener <=10V; 6.20V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9691 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.29 .MODEL DF D ( IS=19.9p RS=32.9 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.99f RS=230 N=1.49 ) .ENDS *SRC=DDZX9691TS;DI_DDZX9691TS;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9691TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.28 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=230 N=1.49 ) .ENDS *SRC=DDZX9691W;DI_DDZX9691W;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9691W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.28 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.66f RS=230 N=1.49 ) .ENDS *SRC=DDZX9692;DI_DDZX9692;Diodes;Zener <=10V; 6.80V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9692 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.71 .MODEL DF D ( IS=18.2p RS=32.7 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.64f RS=23.0 N=0.149 ) .ENDS *SRC=DDZX9692TS;DI_DDZX9692TS;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9692TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.71 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=23.0 N=0.149 ) .ENDS *SRC=DDZX9692W;DI_DDZX9692W;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9692W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.71 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.42f RS=23.0 N=0.149 ) .ENDS *SRC=DDZX9693;DI_DDZX9693;Diodes;Zener <=10V; 7.50V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9693 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.41 .MODEL DF D ( IS=16.5p RS=32.4 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.30f RS=23.0 N=0.149 ) .ENDS *SRC=DDZX9693TS;DI_DDZX9693TS;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9693TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.41 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=23.0 N=0.149 ) .ENDS *SRC=DDZX9693W;DI_DDZX9693W;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9693W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.41 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.20f RS=23.0 N=0.149 ) .ENDS *SRC=DDZX9694;DI_DDZX9694;Diodes;Zener <=10V; 8.20V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9694 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.06 .MODEL DF D ( IS=15.1p RS=32.1 N=1.10 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.01f RS=34.5 N=0.223 ) .ENDS *SRC=DDZX9694TS;DI_DDZX9694TS;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9694TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.06 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=34.5 N=0.223 ) .ENDS *SRC=DDZX9694W;DI_DDZX9694W;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9694W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.06 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.01f RS=34.5 N=0.223 ) .ENDS *SRC=DDZX9696;DI_DDZX9696;Diodes;Zener <=10V; 9.10V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9696 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.90 .MODEL DF D ( IS=13.6p RS=31.8 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.72f RS=50.6 N=0.327 ) .ENDS *SRC=DDZX9696TS;DI_DDZX9696TS;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9696TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.89 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=50.6 N=0.327 ) .ENDS *SRC=DDZX9696W;DI_DDZX9696W;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9696W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.89 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=50.6 N=0.327 ) .ENDS *SRC=DDZX9697;DI_DDZX9697;Diodes;Zener <=10V; 10.0V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9697 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.72 .MODEL DF D ( IS=12.4p RS=31.6 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.47f RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9697TS;DI_DDZX9697TS;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9697TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.72 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9697W;DI_DDZX9697W;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9697W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.72 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9699;DI_DDZX9699;Diodes;Zener 10V-50V; 12.0V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9699 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.06f RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9699TS;DI_DDZX9699TS;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9699TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9699W;DI_DDZX9699W;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9699W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 11.7 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9700;DI_DDZX9700;Diodes;Zener 10V-50V; 13.0V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9700 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=9.51p RS=30.8 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.90f RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9700TS;DI_DDZX9700TS;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9700TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9700W;DI_DDZX9700W;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9700W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.27f RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9702;DI_DDZX9702;Diodes;Zener 10V-50V; 15.0V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9702 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 14.7 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.65f RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9702TS;DI_DDZX9702TS;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9702TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 14.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9702W;DI_DDZX9702W;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9702W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 14.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9703;DI_DDZX9703;Diodes;Zener 10V-50V; 16.0V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9703 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=7.72p RS=30.2 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.54f RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9703TS;DI_DDZX9703TS;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9703TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9703W;DI_DDZX9703W;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9703W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9705;DI_DDZX9705;Diodes;Zener 10V-50V; 18.0V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9705 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.37f RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9705TS;DI_DDZX9705TS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9705TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9705W;DI_DDZX9705W;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9705W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9707;DI_DDZX9707;Diodes;Zener 10V-50V; 20.0V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9707 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.24f RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9707TS;DI_DDZX9707TS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9707TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9707W;DI_DDZX9707W;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9707W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=69.0 N=0.446 ) .ENDS *SRC=DDZX9708;DI_DDZX9708;Diodes;Zener 10V-50V; 22.0V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9708 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.12f RS=92.0 N=0.594 ) .ENDS *SRC=DDZX9708TS;DI_DDZX9708TS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9708TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZX9708W;DI_DDZX9708W;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9708W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZX9709;DI_DDZX9709;Diodes;Zener 10V-50V; 24.0V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9709 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 23.6 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.03f RS=92.0 N=0.594 ) .ENDS *SRC=DDZX9709TS;DI_DDZX9709TS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9709TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 23.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZX9709W;DI_DDZX9709W;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9709W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 23.6 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZX9711;DI_DDZX9711;Diodes;Zener 10V-50V; 27.0V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9711 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 26.6 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.16e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZX9711TS;DI_DDZX9711TS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9711TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 26.6 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZX9711W;DI_DDZX9711W;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9711W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 26.6 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.10e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZX9712;DI_DDZX9712;Diodes;Zener 10V-50V; 28.0V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9712 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=4.41p RS=28.6 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.83e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZX9712TS;DI_DDZX9712TS;Diodes;Zener 10V-50V; 28.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9712TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.94p RS=27.5 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.89e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZX9712W;DI_DDZX9712W;Diodes;Zener 10V-50V; 28.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9712W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=2.94p RS=27.5 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.89e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZX9713;DI_DDZX9713;Diodes;Zener 10V-50V; 30.0V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9713 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 29.6 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZX9713TS;DI_DDZX9713TS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9713TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 29.6 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZX9713W;DI_DDZX9713W;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9713W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 29.6 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49e-016 RS=92.0 N=0.594 ) .ENDS *SRC=DDZX9714;DI_DDZX9714;Diodes;Zener 10V-50V; 33.0V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9714 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 31.0 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49e-016 RS=1.35k N=3.00 ) .ENDS *SRC=DDZX9714TS;DI_DDZX9714TS;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9714TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 31.0 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=1.35k N=3.00 ) .ENDS *SRC=DDZX9714W;DI_DDZX9714W;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9714W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 31.0 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.99e-016 RS=1.35k N=3.00 ) .ENDS *SRC=DDZX9715;DI_DDZX9715;Diodes;Zener 10V-50V; 36.0V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9715 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.8 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=13.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87e-016 RS=4.45k N=3.00 ) .ENDS *SRC=DDZX9715TS;DI_DDZX9715TS;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9715TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 34.0 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=13.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=1.45k N=3.00 ) .ENDS *SRC=DDZX9715W;DI_DDZX9715W;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9715W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 34.0 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10 + CJO=13.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58e-016 RS=1.45k N=3.00 ) .ENDS *SRC=DDZX9716;DI_DDZX9716;Diodes;Zener 10V-50V; 39.0V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9716 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.8 .MODEL DF D ( IS=3.17p RS=27.7 N=1.10 + CJO=24.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.34e-016 RS=4.45k N=3.00 ) .ENDS *SRC=DDZX9716TS;DI_DDZX9716TS;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9716TS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.9 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=12.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=1.45k N=3.00 ) .ENDS *SRC=DDZX9716W;DI_DDZX9716W;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9716W 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.9 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10 + CJO=12.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.23e-016 RS=1.45k N=3.00 ) .ENDS *SRC=DDZX9717;DI_DDZX9717;Diodes;Zener 10V-50V; 43.0V 0.300W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_DDZX9717 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.7 .MODEL DF D ( IS=2.87p RS=27.4 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.75e-016 RS=6.25k N=3.00 ) .ENDS *SRC=DDZX9V1C;DI_DDZX9V1C;Diodes;Zener <=10V; 9.10V 0.300W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX9V1C 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.72 .MODEL DF D ( IS=13.6p RS=31.8 N=1.10 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.72f RS=4.11 N=3.00 ) .ENDS *SRC=DDZX9V1CTS;DI_DDZX9V1CTS;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX9V1CTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.68 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=4.11 N=3.00 ) .ENDS *SRC=DDZX9V1CW;DI_DDZX9V1CW;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER *SYM=HZEN .SUBCKT DI_DDZX9V1CW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.68 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.81f RS=4.11 N=3.00 ) .ENDS *SRC=DZ23C10;DI_DZ23C10;Diodes;Zener <=10V; 10.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.35 .MODEL DF D ( IS=12.4p RS=31.6 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) *SRC=DZ23C11;DI_DZ23C11;Diodes;Zener 10V-50V; 11.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C11 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.79 .MODEL DF D ( IS=11.2p RS=31.3 N=1.10 + CJO=41.5p VJ=1.00 M=0.330 TT=50.1n ) *SRC=DZ23C12;DI_DZ23C12;Diodes;Zener 10V-50V; 12.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.78 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=39.0p VJ=1.00 M=0.330 TT=50.1n ) *SRC=DZ23C13;DI_DZ23C13;Diodes;Zener 10V-50V; 13.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C13 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=9.51p RS=30.8 N=1.10 + CJO=37.7p VJ=1.00 M=0.330 TT=50.1n ) *SRC=DZ23C15;DI_DZ23C15;Diodes;Zener 10V-50V; 15.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) *SRC=DZ23C16;DI_DZ23C16;Diodes;Zener 10V-50V; 16.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=7.72p RS=30.2 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) *SRC=DZ23C18;DI_DZ23C18;Diodes;Zener 10V-50V; 18.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) *SRC=DZ23C20;DI_DZ23C20;Diodes;Zener 10V-50V; 20.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n ) *SRC=DZ23C22;DI_DZ23C22;Diodes;Zener 10V-50V; 22.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.5 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=DZ23C24;DI_DZ23C24;Diodes;Zener 10V-50V; 24.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.4 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n ) *SRC=DZ23C27;DI_DZ23C27;Diodes;Zener 10V-50V; 27.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C27 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.4 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10 + CJO=20.7p VJ=1.00 M=0.330 TT=50.1n ) *SRC=DZ23C2V7;DI_DZ23C2V7;Diodes;Zener <=10V; 2.70V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C2V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.263 .MODEL DF D ( IS=45.8p RS=35.3 N=1.10 + CJO=450p VJ=0.750 M=0.330 TT=50.1n ) *SRC=DZ23C30;DI_DZ23C30;Diodes;Zener 10V-50V; 30.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C30 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.4 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=19.5p VJ=1.00 M=0.330 TT=50.1n ) *SRC=DZ23C33;DI_DZ23C33;Diodes;Zener 10V-50V; 33.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.4 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) *SRC=DZ23C36;DI_DZ23C36;Diodes;Zener 10V-50V; 36.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.3 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=DZ23C39;DI_DZ23C39;Diodes;Zener 10V-50V; 39.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C39 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.3 .MODEL DF D ( IS=3.17p RS=27.7 N=1.10 + CJO=17.0p VJ=1.00 M=0.330 TT=50.1n ) *SRC=DZ23C3V0;DI_DZ23C3V0;Diodes;Zener <=10V; 3.00V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C3V0 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.495 .MODEL DF D ( IS=41.2p RS=35.0 N=1.10 + CJO=417p VJ=0.750 M=0.330 TT=50.1n ) *SRC=DZ23C3V3;DI_DZ23C3V3;Diodes;Zener <=10V; 3.30V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C3V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.787 .MODEL DF D ( IS=37.5p RS=34.7 N=1.10 + CJO=397p VJ=0.750 M=0.330 TT=50.1n ) *SRC=DZ23C3V6;DI_DZ23C3V6;Diodes;Zener <=10V; 3.60V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C3V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.08 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=384p VJ=0.750 M=0.330 TT=50.1n ) *SRC=DZ23C3V9;DI_DZ23C3V9;Diodes;Zener <=10V; 3.60V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C3V9 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.08 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=370p VJ=0.750 M=0.330 TT=50.1n ) *SRC=DZ23C43;DI_DZ23C43;Diodes;Zener 10V-50V; 43.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C43 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.3 .MODEL DF D ( IS=2.87p RS=27.4 N=1.10 + CJO=16.7p VJ=1.00 M=0.330 TT=50.1n ) *SRC=DZ23C47;DI_DZ23C47;Diodes;Zener 10V-50V; 47.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C47 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 44.3 .MODEL DF D ( IS=2.63p RS=27.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) *SRC=DZ23C4V3;DI_DZ23C4V3;Diodes;Zener <=10V; 4.30V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C4V3 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.77 .MODEL DF D ( IS=28.7p RS=34.0 N=1.10 + CJO=357p VJ=0.750 M=0.330 TT=50.1n ) *SRC=DZ23C4V7;DI_DZ23C4V7;Diodes;Zener <=10V; 4.70V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C4V7 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.24 .MODEL DF D ( IS=26.3p RS=33.7 N=1.10 + CJO=350p VJ=0.750 M=0.330 TT=50.1n ) *SRC=DZ23C51;DI_DZ23C51;Diodes;Zener >50V; 51.0V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C51 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.2 .MODEL DF D ( IS=2.42p RS=26.9 N=1.10 + CJO=16.2p VJ=1.00 M=0.330 TT=50.1n ) *SRC=DZ23C5V1;DI_DZ23C5V1;Diodes;Zener <=10V; 5.10V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C5V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.73 .MODEL DF D ( IS=24.2p RS=33.5 N=1.10 + CJO=132p VJ=0.750 M=0.330 TT=50.1n ) *SRC=DZ23C5V6;DI_DZ23C5V6;Diodes;Zener <=10V; 5.60V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.32 .MODEL DF D ( IS=22.1p RS=33.2 N=1.10 + CJO=102p VJ=0.750 M=0.330 TT=50.1n ) *SRC=DZ23C6V2;DI_DZ23C6V2;Diodes;Zener <=10V; 6.20V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.12 .MODEL DF D ( IS=19.9p RS=32.9 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) *SRC=DZ23C6V8;DI_DZ23C6V8;Diodes;Zener <=10V; 6.80V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.93 .MODEL DF D ( IS=18.2p RS=32.7 N=1.10 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n ) *SRC=DZ23C7V5;DI_DZ23C7V5;Diodes;Zener <=10V; 7.50V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.74 .MODEL DF D ( IS=16.5p RS=32.4 N=1.10 + CJO=59.5p VJ=0.750 M=0.330 TT=50.1n ) *SRC=DZ23C8V2;DI_DZ23C8V2;Diodes;Zener <=10V; 8.20V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.43 .MODEL DF D ( IS=15.1p RS=32.1 N=1.10 + CJO=54.2p VJ=0.750 M=0.330 TT=50.1n ) *SRC=DZ23C9V1;DI_DZ23C9V1;Diodes;Zener <=10V; 9.10V 0.300W Diodes Inc. Per node. Device contains two *SYM=HZEN .SUBCKT DI_DZ23C9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.00 .MODEL DF D ( IS=13.6p RS=31.8 N=1.10 + CJO=48.9p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5221B;DI_MMBZ5221B;Diodes;Zener <=10V; 2.40V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5221B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=60.1p RS=36.1 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.0f RS=26.1 N=3.00 ) .ENDS *SRC=MMBZ5221BS;DI_MMBZ5221BS;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5221BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=340p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5221BT;DI_MMBZ5221BT;Diodes;Zener <=10V; 2.40V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5221BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5221BTS;DI_MMBZ5221BTS;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5221BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=340p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5221BW;DI_MMBZ5221BW;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5221BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=205p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5223B;DI_MMBZ5223B;Diodes;Zener <=10V; 2.70V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5223B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=53.4p RS=35.7 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.7f RS=26.1 N=3.00 ) .ENDS *SRC=MMBZ5223BS;DI_MMBZ5223BS;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5223BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=275p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5223BT;DI_MMBZ5223BT;Diodes;Zener <=10V; 2.70V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5223BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5223BTS;DI_MMBZ5223BTS;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5223BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=275p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5223BW;DI_MMBZ5223BW;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5223BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10 + CJO=172p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5225B;DI_MMBZ5225B;Diodes;Zener <=10V; 3.00V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5225B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.274 .MODEL DF D ( IS=48.1p RS=35.4 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.61f RS=26.1 N=3.00 ) .ENDS *SRC=MMBZ5225BS;DI_MMBZ5225BS;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5225BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.230 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=240p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5225BT;DI_MMBZ5225BT;Diodes;Zener <=10V; 3.00V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5225BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.208 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5225BTS;DI_MMBZ5225BTS;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5225BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.230 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=240p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5225BW;DI_MMBZ5225BW;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5225BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.230 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=147p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5226B;DI_MMBZ5226B;Diodes;Zener <=10V; 3.30V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5226B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.606 .MODEL DF D ( IS=43.7p RS=35.2 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.74f RS=24.1 N=3.00 ) .ENDS *SRC=MMBZ5226BS;DI_MMBZ5226BS;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5226BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.563 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=230p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5226BT;DI_MMBZ5226BT;Diodes;Zener <=10V; 3.30V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5226BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.541 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5226BTS;DI_MMBZ5226BTS;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5226BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.563 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=230p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5226BW;DI_MMBZ5226BW;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5226BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.563 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10 + CJO=127p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5227B;DI_MMBZ5227B;Diodes;Zener <=10V; 3.60V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5227B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.980 .MODEL DF D ( IS=40.1p RS=34.9 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.01f RS=20.1 N=3.00 ) .ENDS *SRC=MMBZ5227BS;DI_MMBZ5227BS;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5227BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.936 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=190p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5227BT;DI_MMBZ5227BT;Diodes;Zener <=10V; 3.60V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5227BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.914 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5227BTS;DI_MMBZ5227BTS;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5227BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.936 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=190p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5227BW;DI_MMBZ5227BW;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5227BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.936 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10 + CJO=112p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5228B;DI_MMBZ5228B;Diodes;Zener <=10V; 3.90V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5228B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.29 .MODEL DF D ( IS=37.0p RS=34.7 N=1.10 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.39f RS=19.1 N=3.00 ) .ENDS *SRC=MMBZ5228BS;DI_MMBZ5228BS;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5228BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.25 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=180p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5228BT;DI_MMBZ5228BT;Diodes;Zener <=10V; 3.90V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5228BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.23 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5228BTS;DI_MMBZ5228BTS;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5228BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.25 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=180p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5228BW;DI_MMBZ5228BW;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5228BW 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.25 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5229B;DI_MMBZ5229B;Diodes;Zener <=10V; 4.30V 0.350W Diodes Inc. *SYM=HZEN .SUBCKT DI_MMBZ5229B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.71 .MODEL DF D ( IS=33.5p RS=34.4 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.71f RS=18.1 N=3.00 ) .ENDS *SRC=MMBZ5229BS;DI_MMBZ5229BS;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5229BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.66 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=170p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5229BT;DI_MMBZ5229BT;Diodes;Zener <=10V; 4.30V 0.150W Diodes Inc. - *SYM=HZEN .SUBCKT DI_MMBZ5229BT 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.64 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMBZ5229BTS;DI_MMBZ5229BTS;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5229BTS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.66 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10 + CJO=170p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5221B;DI_MMSZ5221B;Diodes;Zener <=10V; 2.40V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5221B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=85.8p RS=37.1 N=1.10 + CJO=794p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5221BS;DI_MMSZ5221BS;Diodes;Zener <=10V; 2.40V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5221BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0 .MODEL DF D ( IS=85.8p RS=37.1 N=1.10 + CJO=794p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5223B;DI_MMSZ5223B;Diodes;Zener <=10V; 2.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5223B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.75m .MODEL DF D ( IS=76.3p RS=36.7 N=1.10 + CJO=463p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5223BS;DI_MMSZ5223BS;Diodes;Zener <=10V; 2.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5223BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.75m .MODEL DF D ( IS=76.3p RS=36.7 N=1.10 + CJO=463p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5225B;DI_MMSZ5225B;Diodes;Zener <=10V; 3.00V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5225B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.302 .MODEL DF D ( IS=68.7p RS=36.4 N=1.10 + CJO=397p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5225BS;DI_MMSZ5225BS;Diodes;Zener <=10V; 3.00V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5225BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.302 .MODEL DF D ( IS=68.7p RS=36.4 N=1.10 + CJO=397p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5226B;DI_MMSZ5226B;Diodes;Zener <=10V; 3.30V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5226B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.634 .MODEL DF D ( IS=62.4p RS=36.2 N=1.10 + CJO=251p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5226BS;DI_MMSZ5226BS;Diodes;Zener <=10V; 3.30V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5226BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.634 .MODEL DF D ( IS=62.4p RS=36.2 N=1.10 + CJO=251p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5227B;DI_MMSZ5227B;Diodes;Zener <=10V; 3.60V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5227B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.01 .MODEL DF D ( IS=57.2p RS=35.9 N=1.10 + CJO=238p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5227BS;DI_MMSZ5227BS;Diodes;Zener <=10V; 3.60V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5227BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.01 .MODEL DF D ( IS=57.2p RS=35.9 N=1.10 + CJO=238p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5228B;DI_MMSZ5228B;Diodes;Zener <=10V; 3.90V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5228B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.32 .MODEL DF D ( IS=52.8p RS=35.7 N=1.10 + CJO=159p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5228BS;DI_MMSZ5228BS;Diodes;Zener <=10V; 3.90V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5228BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.32 .MODEL DF D ( IS=52.8p RS=35.7 N=1.10 + CJO=159p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5229B;DI_MMSZ5229B;Diodes;Zener <=10V; 4.30V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5229B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.73 .MODEL DF D ( IS=47.9p RS=35.4 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5229BS;DI_MMSZ5229BS;Diodes;Zener <=10V; 4.30V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5229BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.73 .MODEL DF D ( IS=47.9p RS=35.4 N=1.10 + CJO=145p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5230B;DI_MMSZ5230B;Diodes;Zener <=10V; 4.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5230B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.19 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10 + CJO=139p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5230BS;DI_MMSZ5230BS;Diodes;Zener <=10V; 4.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5230BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.19 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10 + CJO=139p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5231B;DI_MMSZ5231B;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5231B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.62 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=132p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5231BS;DI_MMSZ5231BS;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5231BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.62 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10 + CJO=132p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5232B;DI_MMSZ5232B;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5232B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.23 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5232BS;DI_MMSZ5232BS;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5232BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.23 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5233B;DI_MMSZ5233B;Diodes;Zener <=10V; 6.00V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5233B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.71 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=83.3p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5233BS;DI_MMSZ5233BS;Diodes;Zener <=10V; 6.00V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5233BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.71 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10 + CJO=83.3p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5234B;DI_MMSZ5234B;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5234B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.91 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5234BS;DI_MMSZ5234BS;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5234BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.91 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5235B;DI_MMSZ5235B;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5235B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.56 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=71.4p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5235BS;DI_MMSZ5235BS;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5235BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.56 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10 + CJO=71.4p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5236B;DI_MMSZ5236B;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5236B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.21 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=58.2p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5236BS;DI_MMSZ5236BS;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5236BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.21 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10 + CJO=58.2p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5237B;DI_MMSZ5237B;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5237B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.86 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5237BS;DI_MMSZ5237BS;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5237BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.86 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5238B;DI_MMSZ5238B;Diodes;Zener <=10V; 8.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5238B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.36 .MODEL DF D ( IS=23.7p RS=33.4 N=1.10 + CJO=51.6p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5238BS;DI_MMSZ5238BS;Diodes;Zener <=10V; 8.70V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5238BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.36 .MODEL DF D ( IS=23.7p RS=33.4 N=1.10 + CJO=51.6p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5239B;DI_MMSZ5239B;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5239B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.72 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=50.3p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5239BS;DI_MMSZ5239BS;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5239BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.72 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10 + CJO=50.3p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5240B;DI_MMSZ5240B;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5240B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.47 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5240BS;DI_MMSZ5240BS;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5240BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.47 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n ) *SRC=MMSZ5241B;DI_MMSZ5241B;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5241B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.36 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5241BS;DI_MMSZ5241BS;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5241BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.36 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5242B;DI_MMSZ5242B;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5242B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.19 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5242BS;DI_MMSZ5242BS;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5242BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.19 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5243B;DI_MMSZ5243B;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5243B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5243BS;DI_MMSZ5243BS;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5243BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5245B;DI_MMSZ5245B;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5245B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5245BS;DI_MMSZ5245BS;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5245BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5246B;DI_MMSZ5246B;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5246B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5246BS;DI_MMSZ5246BS;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5246BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.7 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5248B;DI_MMSZ5248B;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5248B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=25.8p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5248BS;DI_MMSZ5248BS;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5248BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.7 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10 + CJO=25.8p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5250B;DI_MMSZ5250B;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5250B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5250BS;DI_MMSZ5250BS;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5250BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.7 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5251B;DI_MMSZ5251B;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5251B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5251BS;DI_MMSZ5251BS;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5251BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.7 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5252B;DI_MMSZ5252B;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5252B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.7 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5252BS;DI_MMSZ5252BS;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5252BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.7 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5254B;DI_MMSZ5254B;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5254B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5254BS;DI_MMSZ5254BS;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5254BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.6 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5255B;DI_MMSZ5255B;Diodes;Zener 10V-50V; 28.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5255B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.6 .MODEL DF D ( IS=7.36p RS=30.1 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5255BS;DI_MMSZ5255BS;Diodes;Zener 10V-50V; 28.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5255BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.6 .MODEL DF D ( IS=7.36p RS=30.1 N=1.10 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5256B;DI_MMSZ5256B;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5256B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=14.5p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5256BS;DI_MMSZ5256BS;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5256BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=14.5p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5257B;DI_MMSZ5257B;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5257B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10 + CJO=14.1p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5257BS;DI_MMSZ5257BS;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5257BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10 + CJO=14.1p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5258B;DI_MMSZ5258B;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5258B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.6 .MODEL DF D ( IS=5.72p RS=29.4 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5258BS;DI_MMSZ5258BS;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5258BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.6 .MODEL DF D ( IS=5.72p RS=29.4 N=1.10 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5259B;DI_MMSZ5259B;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5259B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.6 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10 + CJO=13.7p VJ=1.00 M=0.330 TT=50.1n ) *SRC=MMSZ5259BS;DI_MMSZ5259BS;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. 500 mW Zener *SYM=HZEN .SUBCKT DI_MMSZ5259BS 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.6 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10 + CJO=13.7p VJ=1.00 M=0.330 TT=50.1n ) *SRC=QZX363C12;DI_QZX363C12;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four *SYM=HZEN .SUBCKT DI_QZX363C12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.71 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n ) *SRC=QZX363C15;DI_QZX363C15;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four *SYM=HZEN .SUBCKT DI_QZX363C15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.7 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10 + CJO=25.8p VJ=1.00 M=0.330 TT=50.1n ) *SRC=QZX363C20;DI_QZX363C20;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four *SYM=HZEN .SUBCKT DI_QZX363C20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.5 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n ) *SRC=QZX363C5V6;DI_QZX363C5V6;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four *SYM=HZEN .SUBCKT DI_QZX363C5V6 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.29 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n ) *SRC=QZX363C6V8;DI_QZX363C6V8;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four *SYM=HZEN .SUBCKT DI_QZX363C6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.15 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10 + CJO=66.1p VJ=0.750 M=0.330 TT=50.1n ) *SRC=SMAZ10;DI_SMAZ10;Diodes;Zener <=10V; 10.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_SMAZ10 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.20 .MODEL DF D ( IS=41.2p RS=0.823 N=1.10 + CJO=661p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24f RS=0.161 N=1.04 ) .ENDS *SRC=SMAZ12;DI_SMAZ12;Diodes;Zener 10V-50V; 12.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_SMAZ12 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.8 .MODEL DF D ( IS=34.3p RS=0.797 N=1.10 + CJO=377p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=0.230 N=1.49 ) .ENDS *SRC=SMAZ15;DI_SMAZ15;Diodes;Zener 10V-50V; 15.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_SMAZ15 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.8 .MODEL DF D ( IS=27.5p RS=0.765 N=1.10 + CJO=377p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=0.230 N=1.49 ) .ENDS *SRC=SMAZ16;DI_SMAZ16;Diodes;Zener 10V-50V; 16.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_SMAZ16 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 14.9 .MODEL DF D ( IS=25.7p RS=0.756 N=1.10 + CJO=377p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=0.460 N=1.49 ) .ENDS *SRC=SMAZ18;DI_SMAZ18;Diodes;Zener 10V-50V; 18.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_SMAZ18 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 16.6 .MODEL DF D ( IS=22.9p RS=0.739 N=1.10 + CJO=251p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=0.575 N=1.86 ) .ENDS *SRC=SMAZ20;DI_SMAZ20;Diodes;Zener 10V-50V; 20.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_SMAZ20 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 18.3 .MODEL DF D ( IS=20.6p RS=0.724 N=1.10 + CJO=251p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=0.690 N=2.23 ) .ENDS *SRC=SMAZ22;DI_SMAZ22;Diodes;Zener 10V-50V; 22.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_SMAZ22 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 20.2 .MODEL DF D ( IS=18.7p RS=0.711 N=1.10 + CJO=251p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=0.736 N=2.38 ) .ENDS *SRC=SMAZ24;DI_SMAZ24;Diodes;Zener 10V-50V; 24.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_SMAZ24 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.7 .MODEL DF D ( IS=17.2p RS=0.698 N=1.10 + CJO=226p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=0.920 N=2.97 ) .ENDS *SRC=SMAZ27;DI_SMAZ27;Diodes;Zener 10V-50V; 27.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_SMAZ27 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 25.0 .MODEL DF D ( IS=15.3p RS=0.681 N=1.10 + CJO=226p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.05f RS=0.805 N=2.60 ) .ENDS *SRC=SMAZ30;DI_SMAZ30;Diodes;Zener 10V-50V; 30.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_SMAZ30 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.6 .MODEL DF D ( IS=13.7p RS=0.666 N=1.10 + CJO=226p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=2.39 N=3.00 ) .ENDS *SRC=SMAZ33;DI_SMAZ33;Diodes;Zener 10V-50V; 33.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_SMAZ33 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.6 .MODEL DF D ( IS=12.5p RS=0.653 N=1.10 + CJO=189p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.50f RS=2.89 N=3.00 ) .ENDS *SRC=SMAZ36;DI_SMAZ36;Diodes;Zener 10V-50V; 36.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_SMAZ36 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 34.4 .MODEL DF D ( IS=11.4p RS=0.640 N=1.10 + CJO=189p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=1.61 N=2.08 ) .ENDS *SRC=SMAZ39;DI_SMAZ39;Diodes;Zener 10V-50V; 39.0V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_SMAZ39 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 37.2 .MODEL DF D ( IS=10.6p RS=0.629 N=1.10 + CJO=189p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.11f RS=1.84 N=2.38 ) .ENDS *SRC=SMAZ5V1;DI_SMAZ5V1;Diodes;Zener <=10V; 5.10V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_SMAZ5V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.41 .MODEL DF D ( IS=80.8p RS=0.919 N=1.10 + CJO=1.06n VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=16.2f RS=69.0m N=0.892 ) .ENDS *SRC=SMAZ6V2;DI_SMAZ6V2;Diodes;Zener <=10V; 6.20V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_SMAZ6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.28 .MODEL DF D ( IS=66.5p RS=0.891 N=1.10 + CJO=1.06n VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=13.3f RS=92.0m N=1.19 ) .ENDS *SRC=SMAZ6V2;DI_SMAZ6V2;Diodes;Zener <=10V; 6.20V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_SMAZ6V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.28 .MODEL DF D ( IS=66.5p RS=0.891 N=1.10 + CJO=1.06n VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=13.3f RS=92.0m N=1.19 ) .ENDS *SRC=SMAZ6V8;DI_SMAZ6V8;Diodes;Zener <=10V; 6.80V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_SMAZ6V8 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.87 .MODEL DF D ( IS=60.6p RS=0.878 N=1.10 + CJO=926p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.1f RS=92.0m N=1.19 ) .ENDS *SRC=SMAZ7V5;DI_SMAZ7V5;Diodes;Zener <=10V; 7.50V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_SMAZ7V5 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.55 .MODEL DF D ( IS=54.9p RS=0.864 N=1.10 + CJO=926p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=11.0f RS=94.3m N=1.22 ) .ENDS *SRC=SMAZ8V2;DI_SMAZ8V2;Diodes;Zener <=10V; 8.20V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_SMAZ8V2 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.04 .MODEL DF D ( IS=50.2p RS=0.851 N=1.10 + CJO=794p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.0f RS=0.115 N=1.49 ) .ENDS *SRC=SMAZ9V1;DI_SMAZ9V1;Diodes;Zener <=10V; 9.10V 1.00W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_SMAZ9V1 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.30 .MODEL DF D ( IS=45.3p RS=0.836 N=1.10 + CJO=661p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.05f RS=0.161 N=1.04 ) .ENDS *SRC=ZM4728A;DI_ZM4728A;Diodes;Zener <=10V; 3.30V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4728A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.384 .MODEL DF D ( IS=125p RS=2.98 N=1.10 + CJO=364p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=25.0f RS=8.98 N=3.00 ) .ENDS *SRC=ZM4729A;DI_ZM4729A;Diodes;Zener <=10V; 3.60V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4729A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 0.755 .MODEL DF D ( IS=114p RS=2.97 N=1.10 + CJO=319p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=22.9f RS=8.87 N=3.00 ) .ENDS *SRC=ZM4730A;DI_ZM4730A;Diodes;Zener <=10V; 3.90V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4730A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.17 .MODEL DF D ( IS=106p RS=2.96 N=1.10 + CJO=283p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=21.1f RS=7.79 N=3.00 ) .ENDS *SRC=ZM4731A;DI_ZM4731A;Diodes;Zener <=10V; 4.30V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4731A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 1.68 .MODEL DF D ( IS=95.8p RS=2.94 N=1.10 + CJO=244p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=19.2f RS=6.66 N=3.00 ) .ENDS *SRC=ZM4732A;DI_ZM4732A;Diodes;Zener <=10V; 4.70V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4732A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.12 .MODEL DF D ( IS=87.7p RS=2.93 N=1.10 + CJO=214p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=17.5f RS=6.53 N=3.00 ) .ENDS *SRC=ZM4733A;DI_ZM4733A;Diodes;Zener <=10V; 5.10V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4733A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 2.60 .MODEL DF D ( IS=80.8p RS=2.92 N=1.10 + CJO=189p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=16.2f RS=5.41 N=3.00 ) .ENDS *SRC=ZM4734A;DI_ZM4734A;Diodes;Zener <=10V; 5.60V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4734A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 3.22 .MODEL DF D ( IS=73.6p RS=2.91 N=1.10 + CJO=165p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=14.7f RS=3.27 N=3.00 ) .ENDS *SRC=ZM4735A;DI_ZM4735A;Diodes;Zener <=10V; 6.20V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4735A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.37 .MODEL DF D ( IS=66.5p RS=2.89 N=1.10 + CJO=141p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=13.3f RS=0.460 N=2.44 ) .ENDS *SRC=ZM4736A;DI_ZM4736A;Diodes;Zener <=10V; 6.80V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4736A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.51 .MODEL DF D ( IS=60.6p RS=2.88 N=1.10 + CJO=123p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=12.1f RS=1.40 N=3.00 ) .ENDS *SRC=ZM4737A;DI_ZM4737A;Diodes;Zener <=10V; 7.50V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4737A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.21 .MODEL DF D ( IS=54.9p RS=2.86 N=1.10 + CJO=106p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=11.0f RS=1.71 N=3.00 ) .ENDS *SRC=ZM4738A;DI_ZM4738A;Diodes;Zener <=10V; 8.20V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4738A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 5.90 .MODEL DF D ( IS=50.2p RS=2.85 N=1.10 + CJO=92.8p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=10.0f RS=1.99 N=3.00 ) .ENDS *SRC=ZM4739A;DI_ZM4739A;Diodes;Zener <=10V; 9.10V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4739A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 6.80 .MODEL DF D ( IS=45.3p RS=2.84 N=1.10 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.05f RS=2.23 N=3.00 ) .ENDS *SRC=ZM4740A;DI_ZM4740A;Diodes;Zener <=10V; 10.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4740A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 7.67 .MODEL DF D ( IS=41.2p RS=2.82 N=1.10 + CJO=68.9p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24f RS=3.89 N=3.00 ) .ENDS *SRC=ZM4741A;DI_ZM4741A;Diodes;Zener 10V-50V; 11.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4741A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 8.66 .MODEL DF D ( IS=37.5p RS=2.81 N=1.10 + CJO=101p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=7.49f RS=4.62 N=3.00 ) .ENDS *SRC=ZM4742A;DI_ZM4742A;Diodes;Zener 10V-50V; 12.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4742A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 9.65 .MODEL DF D ( IS=34.3p RS=2.80 N=1.10 + CJO=94.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.87f RS=5.30 N=3.00 ) .ENDS *SRC=ZM4743A;DI_ZM4743A;Diodes;Zener 10V-50V; 13.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4743A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 10.7 .MODEL DF D ( IS=31.7p RS=2.79 N=1.10 + CJO=88.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.34f RS=5.91 N=3.00 ) .ENDS *SRC=ZM4744A;DI_ZM4744A;Diodes;Zener 10V-50V; 15.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4744A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 12.6 .MODEL DF D ( IS=27.5p RS=2.77 N=1.10 + CJO=78.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.49f RS=9.43 N=3.00 ) .ENDS *SRC=ZM4745A;DI_ZM4745A;Diodes;Zener 10V-50V; 16.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4745A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 13.6 .MODEL DF D ( IS=25.7p RS=2.76 N=1.10 + CJO=74.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=5.15f RS=11.0 N=3.00 ) .ENDS *SRC=ZM4746A;DI_ZM4746A;Diodes;Zener 10V-50V; 18.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4746A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 15.6 .MODEL DF D ( IS=22.9p RS=2.74 N=1.10 + CJO=67.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.58f RS=14.4 N=3.00 ) .ENDS *SRC=ZM4747A;DI_ZM4747A;Diodes;Zener 10V-50V; 20.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4747A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 17.6 .MODEL DF D ( IS=20.6p RS=2.72 N=1.10 + CJO=62.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=4.12f RS=15.8 N=3.00 ) .ENDS *SRC=ZM4748A;DI_ZM4748A;Diodes;Zener 10V-50V; 22.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4748A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 19.6 .MODEL DF D ( IS=18.7p RS=2.71 N=1.10 + CJO=58.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.75f RS=16.2 N=3.00 ) .ENDS *SRC=ZM4749A;DI_ZM4749A;Diodes;Zener 10V-50V; 24.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4749A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 21.6 .MODEL DF D ( IS=17.2p RS=2.70 N=1.10 + CJO=54.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.43f RS=17.6 N=3.00 ) .ENDS *SRC=ZM4750A;DI_ZM4750A;Diodes;Zener 10V-50V; 27.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4750A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 24.5 .MODEL DF D ( IS=15.3p RS=2.68 N=1.10 + CJO=50.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=3.05f RS=26.8 N=3.00 ) .ENDS *SRC=ZM4751A;DI_ZM4751A;Diodes;Zener 10V-50V; 30.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4751A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 27.5 .MODEL DF D ( IS=13.7p RS=2.67 N=1.10 + CJO=46.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.75f RS=30.9 N=3.00 ) .ENDS *SRC=ZM4752A;DI_ZM4752A;Diodes;Zener 10V-50V; 33.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4752A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 30.5 .MODEL DF D ( IS=12.5p RS=2.65 N=1.10 + CJO=43.8p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.50f RS=34.6 N=3.00 ) .ENDS *SRC=ZM4753A;DI_ZM4753A;Diodes;Zener 10V-50V; 36.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4753A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 33.5 .MODEL DF D ( IS=11.4p RS=2.64 N=1.10 + CJO=41.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.29f RS=38.9 N=3.00 ) .ENDS *SRC=ZM4754A;DI_ZM4754A;Diodes;Zener 10V-50V; 39.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4754A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 36.5 .MODEL DF D ( IS=10.6p RS=2.63 N=1.10 + CJO=39.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=2.11f RS=48.0 N=3.00 ) .ENDS *SRC=ZM4755A;DI_ZM4755A;Diodes;Zener 10V-50V; 43.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4755A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.4 .MODEL DF D ( IS=9.58p RS=2.62 N=1.10 + CJO=37.1p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.92f RS=57.0 N=3.00 ) .ENDS *SRC=ZM4756A;DI_ZM4756A;Diodes;Zener 10V-50V; 47.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4756A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 44.4 .MODEL DF D ( IS=8.77p RS=2.60 N=1.10 + CJO=35.2p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.75f RS=65.9 N=3.00 ) .ENDS *SRC=ZM4757A;DI_ZM4757A;Diodes;Zener >50V; 51.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4757A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.4 .MODEL DF D ( IS=8.08p RS=2.59 N=1.10 + CJO=33.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.62f RS=79.5 N=3.00 ) .ENDS *SRC=ZM4758A;DI_ZM4758A;Diodes;Zener >50V; 56.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4758A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 53.3 .MODEL DF D ( IS=7.36p RS=2.58 N=1.10 + CJO=32.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.47f RS=92.7 N=3.00 ) .ENDS *SRC=ZM4759A;DI_ZM4759A;Diodes;Zener >50V; 62.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4759A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 59.3 .MODEL DF D ( IS=6.65p RS=2.56 N=1.10 + CJO=30.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.33f RS=106 N=3.00 ) .ENDS *SRC=ZM4760A;DI_ZM4760A;Diodes;Zener >50V; 68.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4760A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 65.3 .MODEL DF D ( IS=6.06p RS=2.55 N=1.10 + CJO=29.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.21f RS=129 N=3.00 ) .ENDS *SRC=ZM4761A;DI_ZM4761A;Diodes;Zener >50V; 75.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4761A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 72.3 .MODEL DF D ( IS=5.49p RS=2.54 N=1.10 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.10f RS=151 N=3.00 ) .ENDS *SRC=ZM4762A;DI_ZM4762A;Diodes;Zener >50V; 82.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4762A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 79.2 .MODEL DF D ( IS=5.02p RS=2.52 N=1.10 + CJO=26.6p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=1.00f RS=174 N=3.00 ) .ENDS *SRC=ZM4763A;DI_ZM4763A;Diodes;Zener >50V; 91.0V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4763A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 88.1 .MODEL DF D ( IS=4.53p RS=2.51 N=1.10 + CJO=25.4p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.05e-016 RS=222 N=3.00 ) .ENDS *SRC=ZM4764A;DI_ZM4764A;Diodes;Zener >50V; 100V 1.00W Diodes Inc. *SYM=HZEN .SUBCKT DI_ZM4764A 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 97.0 .MODEL DF D ( IS=4.12p RS=2.49 N=1.10 + CJO=24.5p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.24e-016 RS=319 N=3.00 ) .ENDS *SRC=ZMM5235B;DI_ZMM5235B;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. zener *SYM=HZEN .SUBCKT DI_ZMM5235B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 4.56 .MODEL DF D ( IS=30.3p RS=4.28 N=1.10 + CJO=196p VJ=0.750 M=0.330 TT=50.1n ) .MODEL DR D ( IS=6.06f RS=1.15 N=2.97 ) .ENDS *SRC=ZMM5260B;DI_ZMM5260B;Diodes;Zener 10V-50V; 43.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_ZMM5260B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 40.7 .MODEL DF D ( IS=4.79p RS=1.24 N=1.10 + CJO=26.0p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=9.58e-016 RS=16.0 N=3.00 ) .ENDS *SRC=ZMM5262B;DI_ZMM5262B;Diodes;Zener >50V; 51.0V 0.500W Diodes Inc. Zener *SYM=HZEN .SUBCKT DI_ZMM5262B 1 2 * Terminals A K D1 1 2 DF DZ 3 1 DR VZ 2 3 48.7 .MODEL DF D ( IS=4.04p RS=1.24 N=1.10 + CJO=24.3p VJ=1.00 M=0.330 TT=50.1n ) .MODEL DR D ( IS=8.08e-016 RS=30.1 N=3.00 ) .ENDS *SRC=1N4148;DI_1N4148;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. - .MODEL DI_1N4148 D ( IS=222p RS=68.6m BV=75.0 IBV=1.00u + CJO=4.00p M=0.333 N=1.65 TT=5.76n ) *SRC=1N4148W;1N4148W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. .MODEL 1N4148W D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) *SRC=1N4148WS;1N4148WS;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL 1N4148WS D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) *SRC=1N4148WT;DI_1N4148WT;Diodes;Si; 80.0V 0.125A 4.00ns Diodes Inc. Switching .MODEL DI_1N4148WT D ( IS=111n RS=0.628 BV=80.0 IBV=1.00u + CJO=2.00p M=0.333 N=1.70 TT=5.76n ) *SRC=1N4448HWS;DI_1N4448HWS;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc. Switching Diode .MODEL DI_1N4448HWS D ( IS=24.7n RS=84.4m BV=80.0 IBV=100n + CJO=3.50p M=0.333 N=2.12 TT=5.76n ) *SRC=1N4448HWT;DI_1N4448HWT;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc. Switching .MODEL DI_1N4448HWT D ( IS=137f RS=0.168 BV=80.0 IBV=100n + CJO=3.56p M=0.333 N=1.11 TT=5.76n ) *SRC=1N4448W;DI_1N4448W;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. .MODEL DI_1N4448W D ( IS=355p RS=0.168 BV=75.0 IBV=2.50u + CJO=4.00p M=0.333 N=1.70 TT=5.76n ) *SRC=1N4448WS;DI_1N4448WS;Diodes;Si; 75.0V 0.500A 4.00ns Diodes Inc. Switching Diode .MODEL DI_1N4448WS D ( IS=24.7n RS=84.4m BV=75.0 IBV=2.50u + CJO=4.00p M=0.333 N=2.12 TT=5.76n ) *SRC=BAL99;DI_BAL99;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAL99 D ( IS=31.2n RS=0.360 BV=75.0 IBV=2.50u + CJO=1.72p M=0.333 N=2.35 TT=5.76n ) *SRC=BAS116;DI_BAS116;Diodes;Si; 60.0V 0.215A 3.00us Diodes Inc. Switching Diode .MODEL DI_BAS116 D ( IS=4.53u RS=0.383 BV=60.0 IBV=5.00n + CJO=1.72p M=0.333 N=4.07 TT=4.32u ) *SRC=BAS116T;DI_BAS116T;Diodes;Si; 85.0V 0.215A 3.00us Diodes Inc. Switching Diode .MODEL DI_BAS116T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.61 TT=4.32u ) *SRC=MMBD4148;DI_MMBD4148;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching .MODEL DI_MMBD4148 D ( IS=126n RS=0.140 BV=75.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.60 TT=5.76n ) *SRC=BAS16T;DI_BAS16T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAS16T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u + CJO=1.99p M=0.333 N=1.95 TT=5.76n ************************************************************************************************************************ *SRC=BAS16TW;DI_BAS16TW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAS16TW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAS16W;DI_BAS16W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAS16W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAS19;DI_BAS19;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS19 D ( IS=41.7n RS=0.270 BV=100 IBV=100n + CJO=2.98p M=0.333 N=2.35 TT=72.0n ) *SRC=BAS19W;DI_BAS19W;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS19W D ( IS=114n RS=0.172 BV=100 IBV=100n + CJO=2.98p M=0.333 N=2.58 TT=72.0n ) *SRC=BAS20;DI_BAS20;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS20 D ( IS=41.7n RS=0.270 BV=150 IBV=100n + CJO=2.98p M=0.333 N=2.35 TT=72.0n ) *SRC=BAS20W;DI_BAS20W;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS20W D ( IS=114n RS=0.172 BV=150 IBV=100n + CJO=2.98p M=0.333 N=2.58 TT=72.0n ) *SRC=BAS21;DI_BAS21;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS21 D ( IS=41.7n RS=0.270 BV=200 IBV=100n + CJO=2.98p M=0.333 N=2.35 TT=72.0n ) *SRC=BAS21T;DI_BAS21T;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS21T D ( IS=401n RS=0.105 BV=200 IBV=100n + CJO=5.00p M=0.333 N=2.87 TT=72.0n ) *SRC=BAS21W;DI_BAS21W;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAS21W D ( IS=114n RS=0.172 BV=200 IBV=100n + CJO=2.98p M=0.333 N=2.58 TT=72.0n ) *SRC=BAV101;DI_BAV101;Diodes;Si; 100V 0.250A 50.0ns Diodes Inc. Switching .MODEL DI_BAV101 D ( IS=680n RS=0.168 BV=100 IBV=100n + CJO=1.99p M=0.333 N=3.29 TT=72.0n ) *SRC=BAV102;DI_BAV102;Diodes;Si; 150V 0.250A 50.0ns Diodes Inc. Switching .MODEL DI_BAV102 D ( IS=680n RS=0.168 BV=150 IBV=100n + CJO=1.99p M=0.333 N=3.29 TT=72.0n ) *SRC=BAV103;DI_BAV103;Diodes;Si; 200V 0.250A 50.0ns Diodes Inc. Switching .MODEL DI_BAV103 D ( IS=680n RS=0.168 BV=200 IBV=100n + CJO=1.99p M=0.333 N=3.29 TT=72.0n ) *SRC=BAV116W;DI_BAV116W;Diodes;Si; 130V 0.215A 3.00us Diodes Inc. Low leakage diode .MODEL DI_BAV116W D ( IS=22.5p RS=0.282 BV=130 IBV=5.00n + CJO=2.40p M=0.333 N=1.67 TT=4.32u ) *SRC=BAV16W;BAV16W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. - .MODEL BAV16W D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) *SRC=BAV16WS;BAV16WS;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL BAV16WS D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.07 TT=5.76n ) *SRC=BAV170;DI_BAV170;Diodes;Si; 85.0V 0.215A 3.00us Diodes, Inc. diode .MODEL DI_BAV170 D ( IS=31.5p RS=0.195 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.70 TT=4.32u *SRC=BAV170T;DI_BAV170T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching Diode, dual, model for one element .MODEL DI_BAV170T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.61 TT=4.32u ) *SRC=BAV199;DI_BAV199;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. diode .MODEL DI_BAV199 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.78 TT=4.32u ) *SRC=BAV199DW;DI_BAV199DW;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. Switching - one element of BAV199DW array .MODEL DI_BAV199DW D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.78 TT=4.32u ) *SRC=BAV199T;DI_BAV199T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching Diode, dual, model for one element .MODEL DI_BAV199T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.61 TT=4.32u ) *SRC=BAV19W;BAV19W;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc. - .MODEL BAV19W D ( IS=1.09u RS=0.105 BV=100 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) *SRC=BAV19WS;BAV19WS;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL BAV19WS D ( IS=1.09u RS=0.105 BV=100 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) *SRC=BAV20W;DI_BAV20W;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc. - .MODEL DI_BAV20W D ( IS=1.09u RS=0.105 BV=150 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) *SRC=BAV20WS;DI_BAV20WS;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAV20WS D ( IS=1.09u RS=0.105 BV=150 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) *SRC=BAV21W;DI_BAV21W;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. - .MODEL DI_BAV21W D ( IS=1.09u RS=0.105 BV=200 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) *SRC=BAV21WS;DI_BAV21WS;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAV21WS D ( IS=1.09u RS=0.105 BV=200 IBV=100n + CJO=5.00p M=0.333 N=3.29 TT=72.0n ) *SRC=BAV23A;DI_BAV23A;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAV23A D ( IS=237n RS=0.260 BV=200 IBV=100n + CJO=3.05p M=0.333 N=2.69 TT=72.0n ) *SRC=BAV23C;DI_BAV23C;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAV23C D ( IS=237n RS=0.260 BV=200 IBV=100n + CJO=3.05p M=0.333 N=2.69 TT=72.0n ) *SRC=BAV23S;DI_BAV23S;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode .MODEL DI_BAV23S D ( IS=237n RS=0.260 BV=200 IBV=100n + CJO=3.05p M=0.333 N=2.69 TT=72.0n ) *SRC=BAV3004W;DI_BAV3004W;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc. Switching .MODEL DI_BAV3004W D ( IS=2.76u RS=0.187 BV=300 IBV=100n + CJO=1.17p M=0.333 N=1.70 TT=72.0n ) *SRC=BAV70;DI_BAV70;Diodes;Si; 75.0V 0.300A 4.00ns Diodes, Inc. switching .MODEL DI_BAV70 D ( IS=308p RS=0.329 BV=75.0 IBV=2.50u + CJO=2.65p M=0.333 N=1.70 TT=5.76n ) *SRC=BAV70;DI_BAV70;Diodes;Si; 75.0V 0.300A 4.00ns Diodes, Inc. switching .MODEL DI_BAV70 D ( IS=308p RS=0.329 BV=75.0 IBV=2.50u + CJO=2.65p M=0.333 N=1.70 TT=5.76n ) *SRC=BAV70T;DI_BAV70T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc. Switching Diode - one element of device .MODEL DI_BAV70T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u + CJO=1.99p M=0.333 N=1.95 TT=5.76n ) *SRC=BAV70W;DI_BAV70W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAV70W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAV756DW;DI_BAV756DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching - one element of device .MODEL DI_BAV756DW D ( IS=49.2n RS=0.141 BV=75.0 IBV=2.50u + CJO=2.65p M=0.333 N=2.45 TT=5.76n ) 76n ) *SRC=BAV99DW;DI_BAV99DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode, Quad, Model for one element .MODEL DI_BAV99DW D ( IS=412p RS=0.140 BV=75.0 IBV=2.50u + CJO=2.00p M=0.333 N=1.70 TT=5.76n ) *SRC=BAV99T;DI_BAV99T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc. Switching Diode - one element of device .MODEL DI_BAV99T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u + CJO=1.99p M=0.333 N=1.95 TT=5.76n ) *SRC=BAV99W;DI_BAV99W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAV99W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAW156;DI_BAW156;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. diode .MODEL DI_BAW156 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.78 TT=4.32u ) *SRC=BAW156T;DI_BAW156T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching Diode, dual, model for one element .MODEL DI_BAW156T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n + CJO=2.00p M=0.333 N=1.61 TT=4.32u ) *SRC=BAW56;DI_BAW56;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAW56 D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAW567DW;DI_BAW567DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAW567DW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAW56DW;DI_BAW56DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAW56DW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=BAW56T;DI_BAW56T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc. Switching Diode - one element of device .MODEL DI_BAW56T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u + CJO=1.99p M=0.333 N=1.95 TT=5.76n ) *SRC=BAW56W;DI_BAW56W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_BAW56W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=LL4148;DI_LL4148;Diodes;Si; 75.0V 0.300A 4.00us Diodes Inc fast switching diode .MODEL DI_LL4148 D ( IS=1.06n RS=0.316 BV=75.0 IBV=5.00u + CJO=3.00p M=0.333 N=1.87 TT=5.76u ) *SRC=MMBD2004S;DI_MMBD2004S;Diodes;Si; 240V 0.225A 50.0ns Diodes Inc. Switching .MODEL DI_MMBD2004S D ( IS=1.76u RS=0.187 BV=240 IBV=100n + CJO=6.63p M=0.333 N=1.70 TT=72.0n ) *SRC=MMBD3004BRM;DI_MMBD3004BRM;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc. Switching - one element of MMBD3004BRM .MODEL DI_MMBD3004BRM D ( IS=2.76u RS=0.187 BV=300 IBV=100n + CJO=1.17p M=0.333 N=1.70 TT=72.0n ) *SRC=MMBD3004S;DI_MMBD3004S;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc. Switching .MODEL DI_MMBD3004S D ( IS=2.76u RS=0.187 BV=300 IBV=100n + CJO=1.17p M=0.333 N=1.70 TT=72.0n ) *SRC=MMBD4148;DI_MMBD4148;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4148 D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) *SRC=MMBD4148W;DI_MMBD4148W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4148W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=MMBD4448;DI_MMBD4448;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4448 D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) *SRC=MMBD4448H;DI_MMBD4448H;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4448H D ( IS=300n RS=0.422 BV=80.0 IBV=100n + CJO=1.99p M=0.333 N=2.77 TT=5.76n ) *SRC=MMBD4448HADW;DI_MMBD4448HADW;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - model for one node of four .MODEL DI_MMBD4448HADW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) *SRC=MMBD4448HAQW;DI_MMBD4448HAQW;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - model for one node of four .MODEL DI_MMBD4448HAQW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) *SRC=MMBD4448HCQW;DI_MMBD4448HCQW;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - model for one node of four .MODEL DI_MMBD4448HCQW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) *SRC=MMBD4448HSDW;DI_MMBD4448HSDW;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - model for one node of four .MODEL DI_MMBD4448HSDW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) *SRC=MMBD4448HT;DI_MMBD4448HT;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4448HT D ( IS=787n RS=0.208 BV=80.0 IBV=100n + CJO=1.99p M=0.333 N=2.86 TT=5.76n ) *SRC=MMBD4448HTA;DI_MMBD4448HTA;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc. Switching Diode, dual, model for one element .MODEL DI_MMBD4448HTA D ( IS=787n RS=0.208 BV=80.0 IBV=100n + CJO=1.99p M=0.333 N=2.86 TT=5.76n ) *SRC=MMBD4448HTC;DI_MMBD4448HTC;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc. Switching Diode, dual, model for one element .MODEL DI_MMBD4448HTC D ( IS=787n RS=0.208 BV=80.0 IBV=100n + CJO=1.99p M=0.333 N=2.86 TT=5.76n ) *SRC=MMBD4448HTS;DI_MMBD4448HTS;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc. Switching Diode, dual, model for one element .MODEL DI_MMBD4448HTS D ( IS=787n RS=0.208 BV=80.0 IBV=100n + CJO=1.99p M=0.333 N=2.86 TT=5.76n ) *SRC=MMBD4448HTW;DI_MMBD4448HTW;Diodes;Si; 80.0V 0.500A 1.50ns Diodes Inc. Switching - model for one node of three .MODEL DI_MMBD4448HTW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n + CJO=2.92p M=0.333 N=1.70 TT=2.16n ) *SRC=MMBD4448HW;DI_MMBD4448HW;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4448HW D ( IS=77.0n RS=84.0m BV=80.0 IBV=100n + CJO=1.99p M=0.333 N=2.37 TT=5.76n ) *SRC=MMBD4448W;DI_MMBD4448W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode .MODEL DI_MMBD4448W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u + CJO=1.72p M=0.333 N=2.34 TT=5.76n ) *SRC=MMBD7000;DI_MMBD7000;Diodes;Si; 75.0V 0.300A 4.00us Diodes Inc. .MODEL DI_MMBD7000 D ( IS=5.08n RS=0.140 BV=75.0 IBV=2.00u + CJO=2.00p M=0.333 N=2.03 TT=5.76u ) *SRC=MMBD4148;DI_MMBD4148;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching .MODEL DI_MMBD4148 D ( IS=126n RS=0.140 BV=75.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.60 TT=5.76n ) *SRC=1N5711;DI_1N5711;Diodes;Si; 70.0V 15.0mA 1.00ns Diodes Inc. - .MODEL DI_1N5711 D ( IS=315n RS=2.80 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=2.03 TT=1.44n ) *SRC=1N5711W;DI_1N5711W;Diodes;Si; 70.0V 15.0mA 1.00ns Diodes Inc. - .MODEL DI_1N5711W D ( IS=315n RS=2.80 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=2.03 TT=1.44n ) *SRC=1N5711WS;DI_1N5711WS;Diodes;Si; 70.0V 15.0mA 1.00ns Diodes Inc. .MODEL DI_1N5711WS D ( IS=315n RS=2.80 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=2.03 TT=1.44n ) *SRC=1N6263W;DI_1N6263W;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_1N6263W D ( IS=1.82u RS=2.80 BV=60.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=BAS40;DI_BAS40;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS40 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40-04;DI_BAS40-04;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-04 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40-04T;DI_BAS40-04T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-04T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40-05;DI_BAS40-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40-05T;DI_BAS40-05T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-05T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40-06;DI_BAS40-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40-06T;DI_BAS40-06T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40-06T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40BRW;DI_BAS40BRW;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four .MODEL DI_BAS40BRW D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40DW-04;DI_BAS40DW-04;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four .MODEL DI_BAS40DW-04 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40DW-05;DI_BAS40DW-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four .MODEL DI_BAS40DW-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40DW-06;DI_BAS40DW-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four .MODEL DI_BAS40DW-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40T;DI_BAS40T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS40T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40TW;DI_BAS40TW;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Tripple, one node of three .MODEL DI_BAS40TW D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40W;DI_BAS40W;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS40W D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40W-04;DI_BAS40W-04;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40W-04 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40W-05;DI_BAS40W-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40W-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS40W-06;DI_BAS40W-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS40W-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n + CJO=5.00p M=0.333 N=2.61 TT=7.20n ) *SRC=BAS70;DI_BAS70;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. - .MODEL DI_BAS70 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-04;DI_BAS70-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-04T;DI_BAS70-04T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-04T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-05;DI_BAS70-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-05T;DI_BAS70-05T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-05T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-06;DI_BAS70-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70-06T;DI_BAS70-06T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70-06T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70BRW;DI_BAS70BRW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAS70BRW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70DW-04;DI_BAS70DW-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAS70DW-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70DW-05;DI_BAS70DW-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAS70DW-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70DW-06;DI_BAS70DW-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAS70DW-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70JW;DI_BAS70JW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70JW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70T;DI_BAS70T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS70T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70TW;DI_BAS70TW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, tripple, one node of three .MODEL DI_BAS70TW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70W;DI_BAS70W;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAS70W D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70W-04;DI_BAS70W-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70W-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70W-05;DI_BAS70W-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70W-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAS70W-06;DI_BAS70W-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAS70W-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u + CJO=2.00p M=0.333 N=1.70 TT=7.20n ) *SRC=BAT42;DI_BAT42;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT42 D ( IS=2.46u RS=0.210 BV=30.0 IBV=500n + CJO=13.3p M=0.333 N=1.70 TT=7.20n ) *SRC=BAT42W;DI_BAT42W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode .MODEL DI_BAT42W D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n + CJO=8.88p M=0.333 N=3.51 TT=7.20n ) *SRC=BAT42WS;DI_BAT42WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode .MODEL DI_BAT42WS D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n + CJO=8.88p M=0.333 N=3.51 TT=7.20n ) *SRC=BAT43W;DI_BAT43W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode .MODEL DI_BAT43W D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n + CJO=8.88p M=0.333 N=3.51 TT=7.20n ) *SRC=BAT43WS;DI_BAT43WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode .MODEL DI_BAT43WS D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n + CJO=8.88p M=0.333 N=3.51 TT=7.20n ) *SRC=BAT46;DI_BAT46;Diodes;Si; 100V 0.150A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT46 D ( IS=603n RS=0.280 BV=100 IBV=5.00u + CJO=7.96p M=0.333 N=1.70 TT=7.20n ) *SRC=BAT46W;DI_BAT46W;Diodes;Si; 100V 0.150A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT46W D ( IS=603n RS=0.280 BV=100 IBV=5.00u + CJO=7.96p M=0.333 N=1.70 TT=7.20n ) *SRC=BAT54;DI_BAT54;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT54 D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54A;DI_BAT54A;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54A D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54ADW;DI_BAT54ADW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAT54ADW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54AT;DI_BAT54AT;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54AT D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54AW;DI_BAT54AW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54AW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54BRW;DI_BAT54BRW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAT54BRW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54C;DI_BAT54C;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54C D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54CDW;DI_BAT54CDW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAT54CDW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54CT;DI_BAT54CT;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54CT D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54CW;DI_BAT54CW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54CW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) ******************************************************************************************************************************************* *SRC=BAT54DW;DI_BAT54DW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky, dual, one of two nodes .MODEL DI_BAT54DW D ( IS=235n RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=1.28 TT=7.20n ) ******************************************************************************************************************************************* *SRC=BAT54JW;DI_BAT54JW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54JW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54S;DI_BAT54S;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54S D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54SDW;DI_BAT54SDW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four .MODEL DI_BAT54SDW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54ST;DI_BAT54ST;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54ST D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54SW;DI_BAT54SW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_BAT54SW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54T;DI_BAT54T;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAT54T D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54TW;DI_BAT54TW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, tripple, one node of three .MODEL DI_BAT54TW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54W;DI_BAT54W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAT54W D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=BAT54WS;DI_BAT54WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode .MODEL DI_BAT54WS D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u + CJO=13.3p M=0.333 N=2.28 TT=7.20n ) *SRC=LLSD101A;DI_LLSD101A;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_LLSD101A D ( IS=1.82u RS=2.80 BV=60.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=LLSD101B;DI_LLSD101B;Diodes;Si; 50.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_LLSD101B D ( IS=1.82u RS=2.80 BV=50.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=LLSD101C;DI_LLSD101C;Diodes;Si; 40.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_LLSD101C D ( IS=1.82u RS=2.80 BV=40.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=LLSD103A;DI_LLSD103A;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_LLSD103A D ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=LLSD103B;DI_LLSD103B;Diodes;Si; 30.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_LLSD103B D ( IS=8.65u RS=0.120 BV=30.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=LLSD103C;DI_LLSD103C;Diodes;Si; 20.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_LLSD103C D ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SD101A;DI_SD101A;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101A D ( IS=1.82u RS=2.80 BV=60.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=SD101AW;DI_SD101AW;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101AW D ( IS=1.82u RS=2.80 BV=60.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) ******************************************************************************************************************************************* *SRC=SD101AWS;DI_SD101AWS;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky- SD101AWS/BWS/CWS .MODEL DI_SD101AWS D ( IS=230n RS=2.13 BV=60.0 IBV=200n + CJO=2.00p M=0.333 N=1.96 TT=1.44n ) ******************************************************************************************************************************************* *SRC=SD101B;DI_SD101B;Diodes;Si; 50.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101B D ( IS=1.82u RS=2.80 BV=50.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=SD101BW;DI_SD101BW;Diodes;Si; 50.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101BW D ( IS=1.82u RS=2.80 BV=50.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=SD101BWS;DI_SD101BWS;Diodes;Si; 50.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101BWS D ( IS=1.82u RS=2.80 BV=50.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=SD101C;DI_SD101C;Diodes;Si; 40.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101C D ( IS=1.82u RS=2.80 BV=40.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=SD101CW;DI_SD101CW;Diodes;Si; 40.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101CW D ( IS=1.82u RS=2.80 BV=40.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=SD101CWS;DI_SD101CWS;Diodes;Si; 40.0V 15.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SD101CWS D ( IS=1.82u RS=2.80 BV=40.0 IBV=200n + CJO=2.65p M=0.333 N=1.70 TT=1.44n ) *SRC=SD103ASDM;DI_SD103ASDM;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky Barrier Diode, quad, one node of four .MODEL DI_SD103ASDM D ( IS=646n RS=0.120 BV=40.0 IBV=5.00u + CJO=29.2 M=0.333 N=1.28 TT=14.4n ) *SRC=SD103ATW;DI_SD103ATW;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky Barrier Diode, tripple, one node of three .MODEL DI_SD103ATW D ( IS=646n RS=0.120 BV=40.0 IBV=5.00u + CJO=29.2 M=0.333 N=1.28 TT=14.4n ) *SRC=SD103AW;DI_SD103AW;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103AW D ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SD103AWS;DI_SD103AWS;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103AWS D ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SD103BWS;DI_SD103BWS;Diodes;Si; 30.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103BWS D ( IS=8.65u RS=0.120 BV=30.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SD103CW;DI_SD103CW;Diodes;Si; 20.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103CW D ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SD103CWS;DI_SD103CWS;Diodes;Si; 20.0V 0.350A 10.0ns Diodes Inc. Schottky .MODEL DI_SD103CWS D ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u + CJO=53.0p M=0.333 N=1.70 TT=14.4n ) *SRC=SDM03MT40;DI_SDM03MT40;Diodes;Si; 40.0V 30.0mA 3.00us Diodes Inc. Schottky Barrier Diode, tripple, one node of three .MODEL DI_SDM03MT40 D ( IS=12.5u RS=1.41 BV=40.0 IBV=1.00u + CJO=2.00p M=0.333 N=2.79 TT=4.32u ) ************************************************************************************************************************************************************** *SRC=SDM03U40;DI_SDM03U40;Diodes;Si; 30.0V 30.0mA 1.00ns Diodes Inc. Schottky .MODEL DI_SDM03U40 D ( IS=16.5u RS=2.20 BV=30.0 IBV=500n + CJO=2.59p M=0.333 N=2.92 TT=1.44n ) *SRC=SDM10M45SD;DI_SDM10M45SD;Diodes;Si; 45.0V 0.100A 3.00us Diodes Inc. Schottky Barrier Diode .MODEL DI_SDM10M45SD D ( IS=553n RS=0.420 BV=45.0 IBV=1.00u + CJO=10.6p M=0.333 N=1.36 TT=4.32u ) ********************************************************************************************************************************** *SRC=SDM10P45;DI_SDM10P45;Diodes;Si; 45.0V 0.100A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM10P45 D ( IS=745n RS=0.792 BV=45.0 IBV=1.00u + CJO=11.2p M=0.333 N=1.39 TT=7.20n ) *SRC=SDM10U45;DI_SDM10U45;Diodes;Si; 40.0V 0.300A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM10U45 D ( IS=26.8u RS=0.140 BV=40.0 IBV=1.00u + CJO=10.6p M=0.333 N=2.45 TT=7.20n ) *SRC=SDM20E40C;DI_SDM20E40C;Diodes;Si; 40.0V 0.400A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM20E40C D ( IS=3.15u RS=0.165 BV=40.0 IBV=70.0u + CJO=39.8p M=0.333 N=1.16 TT=7.20n ) *SRC=SDM20U30;DI_SDM20U30;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM20U30 D ( IS=59.4n RS=0.210 BV=30.0 IBV=150u + CJO=19.9p M=0.333 N=0.700 TT=7.20n ) *SRC=SDM20U40;DI_SDM20U40;Diodes;Si; 40.0V 0.250A 10.0ns Diodes Inc. Schottky .MODEL DI_SDM20U40 D ( IS=4.32u RS=0.168 BV=40.0 IBV=5.00u + CJO=39.8p M=0.333 N=1.70 TT=14.4n ) *SRC=SDM40E20LS;DI_SDM40E20LS;Diodes;Si; 20.0V 0.400A 5.00ns Diodes Inc. Schottky .MODEL DI_SDM40E20LS D ( IS=54.8u RS=0.132 BV=20.0 IBV=250u + CJO=199p M=0.333 N=1.34 TT=7.20n ) *SRC=SDMG0340L;DI_SDMG0340L;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. .MODEL DI_SBMG0340L D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u + CJO=2.65p M=0.333 N=2.82 TT=1.44n ) *SRC=SDMG0340LA;DI_SDMG0340LA;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SBMG0340LA D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u + CJO=2.65p M=0.333 N=2.82 TT=1.44n ) *SRC=SDMG0340LC;DI_SDMG0340LC;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SBMG0340LC D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u + CJO=2.65p M=0.333 N=2.82 TT=1.44n ) *SRC=SDMG0340LS;DI_SDMG0340LS;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SBMG0340LS D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u + CJO=2.65p M=0.333 N=2.82 TT=1.44n ) *SRC=SDMK0340L;DI_SDMK0340L;Diodes;Si; 40.0V 30.0mA 3.00us Diodes Inc. Schottky Barrier Diode .MODEL DI_SDMK0340L D ( IS=11.2u RS=3.64 BV=40.0 IBV=500n + CJO=2.65p M=0.333 N=2.69 TT=4.32u ) ****************************************************************************************************************************** *SRC=SDMP0340LAT;DI_SDMP0340LAT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SDMP0340LAT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.92 TT=7.20n ) ************************************************************************************************************************************************** *SRC=SDMP0340LCT;DI_SDMP0340LCT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SDMP0340LCT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.92 TT=7.20n ) ************************************************************************************************************************************************** *SRC=SDMP0340LST;DI_SDMP0340LST;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two .MODEL DI_SDMP0340LST D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.92 TT=7.20n ) ************************************************************************************************************************************************** *SRC=SDMP0340LT;DI_SDMP0340LT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky .MODEL DI_SDMP0340LT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u + CJO=2.65p M=0.333 N=2.92 TT=7.20n ) *SRC=2W005G;DI_2W005G;Diodes;Si; 50.0V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_2W005G D ( IS=28.4n RS=21.1m BV=50.0 IBV=5.00u + CJO=29.6p M=0.333 N=1.95 TT=4.32u ) *SRC=2W01G;DI_2W01G;Diodes;Si; 100V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_2W01G D ( IS=28.4n RS=21.1m BV=100 IBV=5.00u + CJO=29.6p M=0.333 N=1.95 TT=4.32u ) *SRC=2W02G;DI_2W02G;Diodes;Si; 200V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_2W02G D ( IS=28.4n RS=21.1m BV=200 IBV=5.00u + CJO=29.6p M=0.333 N=1.95 TT=4.32u ) *SRC=2W04G;DI_2W04G;Diodes;Si; 400V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_2W04G D ( IS=28.4n RS=21.1m BV=400 IBV=5.00u + CJO=29.6p M=0.333 N=1.95 TT=4.32u ) *SRC=2W06G;DI_2W06G;Diodes;Si; 600V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_2W06G D ( IS=28.4n RS=21.1m BV=600 IBV=5.00u + CJO=29.6p M=0.333 N=1.95 TT=4.32u ) *SRC=2W08G;DI_2W08G;Diodes;Si; 800V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_2W08G D ( IS=28.4n RS=21.1m BV=800 IBV=5.00u + CJO=29.6p M=0.333 N=1.95 TT=4.32u ) *SRC=2W10G;DI_2W10G;Diodes;Si; 1.00kV 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_2W10G D ( IS=28.4n RS=21.1m BV=1.00k IBV=5.00u + CJO=29.6p M=0.333 N=1.95 TT=4.32u ) *SRC=DF005M;DI_DF005M;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF005M D ( IS=4.42n RS=42.0m BV=50.0 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF005S;DI_DF005S;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF005S D ( IS=4.42n RS=42.0m BV=50.0 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF01M;DI_DF01M;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF01M D ( IS=4.42n RS=42.0m BV=100 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF01S;DI_DF01S;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF01S D ( IS=4.42n RS=42.0m BV=100 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF02M;DI_DF02M;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF02M D ( IS=4.42n RS=42.0m BV=200 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF02S;DI_DF02S;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF02S D ( IS=4.42n RS=42.0m BV=200 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF04M;DI_DF04M;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF04M D ( IS=4.42n RS=42.0m BV=400 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF04S;DI_DF04S;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF04S D ( IS=4.42n RS=42.0m BV=400 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF06M;DI_DF06M;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF06M D ( IS=4.42n RS=42.0m BV=600 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF06S;DI_DF06S;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF06S D ( IS=4.42n RS=42.0m BV=600 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF08M;DI_DF08M;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF08M D ( IS=4.42n RS=42.0m BV=800 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF08S;DI_DF08S;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF08S D ( IS=4.42n RS=42.0m BV=800 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF10M;DI_DF10M;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF10M D ( IS=4.42n RS=42.0m BV=1.00k IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF10S;DI_DF10S;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF10S D ( IS=4.42n RS=42.0m BV=1.00k IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF15005M;DI_DF15005M;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF15005M D ( IS=2.06n RS=28.1m BV=50.0 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF15005S;DI_DF15005S;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF15005S D ( IS=2.06n RS=28.1m BV=50.0 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1501M;DI_DF1501M;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1501M D ( IS=2.06n RS=28.1m BV=100 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1501S;DI_DF1501S;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1501S D ( IS=2.06n RS=28.1m BV=100 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1502M;DI_DF1502M;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1502M D ( IS=2.06n RS=28.1m BV=200 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1502S;DI_DF1502S;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1502S D ( IS=2.06n RS=28.1m BV=200 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1504M;DI_DF1504M;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1504M D ( IS=2.06n RS=28.1m BV=400 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1504S;DI_DF1504S;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1504S D ( IS=2.06n RS=28.1m BV=400 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1506M;DI_DF1506M;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1506M D ( IS=2.06n RS=28.1m BV=600 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1506S;DI_DF1506S;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1506S D ( IS=2.06n RS=28.1m BV=600 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1508M;DI_DF1508M;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1508M D ( IS=2.06n RS=28.1m BV=800 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1508S;DI_DF1508S;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1508S D ( IS=2.06n RS=28.1m BV=800 IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1510M;DI_DF1510M;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1510M D ( IS=2.06n RS=28.1m BV=1.00k IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=DF1510S;DI_DF1510S;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_DF1510S D ( IS=2.06n RS=28.1m BV=1.00k IBV=10.0u + CJO=65.0p M=0.333 N=1.70 TT=4.32u ) *SRC=GBJ15005;DI_GBJ15005;Diodes;Si; 50.0V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ15005 D ( IS=5.11u RS=3.43m BV=50.0 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1501;DI_GBJ1501;Diodes;Si; 100V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1501 D ( IS=5.11u RS=3.43m BV=100 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1502;DI_GBJ1502;Diodes;Si; 200V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1502 D ( IS=5.11u RS=3.43m BV=200 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1504;DI_GBJ1504;Diodes;Si; 400V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1504 D ( IS=5.11u RS=3.43m BV=400 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1506;DI_GBJ1506;Diodes;Si; 600V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1506 D ( IS=5.11u RS=3.43m BV=600 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1508;DI_GBJ1508;Diodes;Si; 800V 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1508 D ( IS=5.11u RS=3.43m BV=800 IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ1510;DI_GBJ1510;Diodes;Si; 1.00kV 15.0A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_GBJ1510 D ( IS=5.11u RS=3.43m BV=1.00k IBV=10.0u + CJO=106p M=0.333 N=2.44 TT=4.32u ) *SRC=GBJ20005;DI_GBJ20005;Diodes;Si; 50.0V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ20005 D ( IS=15.1u RS=2.96m BV=50.0 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2001;DI_GBJ2001;Diodes;Si; 100V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2001 D ( IS=15.1u RS=2.96m BV=100 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2002;DI_GBJ2002;Diodes;Si; 200V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2002 D ( IS=15.1u RS=2.96m BV=200 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2004;DI_GBJ2004;Diodes;Si; 400V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2004 D ( IS=15.1u RS=2.96m BV=400 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2006;DI_GBJ2006;Diodes;Si; 600V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2006 D ( IS=15.1u RS=2.96m BV=600 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2008;DI_GBJ2008;Diodes;Si; 800V 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2008 D ( IS=15.1u RS=2.96m BV=800 IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2010;DI_GBJ2010;Diodes;Si; 1.00kV 20.0A 3.00us Diodes Inc. Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2010 D ( IS=15.1u RS=2.96m BV=1.00k IBV=10.0u + CJO=111p M=0.333 N=2.84 TT=4.32u ) *SRC=GBJ2510;DI_GBJ2510;Diodes;Si; 1.00kV 25.0A 3.00us Diodes Inc. Bridge Rectifier--Per Element .MODEL DI_GBJ2510 D ( IS=379n RS=2.84m BV=1.00k IBV=10.0u + CJO=146p M=0.333 N=2.07 TT=4.32u ) *SRC=GBPC3506;DI_GBPC3506;Diodes;Si; 600V 35.0A 3.00us Diodes Inc Rectifier .MODEL DI_GBPC3506 D ( IS=162u RS=3.32m BV=600 IBV=5.00u + CJO=477p M=0.333 N=3.01 TT=4.32u ) *SRC=GBU1002;DI_GBU1002;Diodes;Si; 200V 10.0A 3.00us Diodes Inc. Bridge Rectifier -- Per Element .MODEL DI_GBU1002 D ( IS=1.71f RS=7.00m BV=200 IBV=5.00u + CJO=133p M=0.333 N=0.900 TT=4.32u ) *SRC=HD01;DI_HD01;Diodes;Si; 100V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD01 D ( IS=3.47n RS=42.6m BV=100 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=HD02;DI_HD02;Diodes;Si; 200V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD02 D ( IS=3.47n RS=42.6m BV=200 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=HD04;DI_HD04;Diodes;Si; 400V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD04 D ( IS=3.47n RS=42.6m BV=400 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=HD06;DI_HD06;Diodes;Si; 600V 0.800A 3.00us Diodes Inc. Bridge Rectifier -- for one element .MODEL DI_HD06 D ( IS=3.47n RS=42.6m BV=600 IBV=5.00u + CJO=25.2p M=0.333 N=1.70 TT=4.32u ) *SRC=KBP005G;DI_KBP005G;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP005G D ( IS=39.2u RS=28.1m BV=50.0 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP01G;DI_KBP01G;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP01G D ( IS=39.2u RS=28.1m BV=100 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP02G;DI_KBP02G;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP02G D ( IS=39.2u RS=28.1m BV=200 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP04G;DI_KBP04G;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP04G D ( IS=39.2u RS=28.1m BV=400 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP06G;DI_KBP06G;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP06G D ( IS=39.2u RS=28.1m BV=600 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP08G;DI_KBP08G;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP08G D ( IS=39.2u RS=28.1m BV=800 IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP10G;DI_KBP10G;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP10G D ( IS=39.2u RS=28.1m BV=1.00k IBV=5.00u + CJO=26.5p M=0.333 N=4.38 TT=4.32u ) *SRC=KBP2005G;DI_KBP2005G;Diodes;Si; 50.0V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP2005G D ( IS=143n RS=21.1m BV=50.0 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP201G;DI_KBP201G;Diodes;Si; 100V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP201G D ( IS=143n RS=21.1m BV=100 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP202G;DI_KBP202G;Diodes;Si; 200V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP202G D ( IS=143n RS=21.1m BV=200 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP204G;DI_KBP204G;Diodes;Si; 400V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP204G D ( IS=143n RS=21.1m BV=400 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP206G;DI_KBP206G;Diodes;Si; 600V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP206G D ( IS=143n RS=21.1m BV=600 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP208G;DI_KBP208G;Diodes;Si; 800V 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP208G D ( IS=143n RS=21.1m BV=800 IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=KBP210G;DI_KBP210G;Diodes;Si; 1.00kV 2.00A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_KBP210G D ( IS=143n RS=21.1m BV=1.00k IBV=5.00u + CJO=46.2p M=0.333 N=2.12 TT=4.32u ) *SRC=PBPC301;DI_PBPC301;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. Bridge Rectifier, per element .MODEL DI_PBPC301 D ( IS=492n RS=14.1m BV=50.0 IBV=10.0u + CJO=102p M=0.333 N=2.45 TT=4.32u ) ) *SRC=PBPC302;DI_PBPC302;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. Bridge Rectifier, per element .MODEL DI_PBPC302 D ( IS=492n RS=14.1m BV=100 IBV=10.0u + CJO=102p M=0.333 N=2.45 TT=4.32u ) ) *SRC=PBPC303;DI_PBPC303;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. Bridge Rectifier, per element .MODEL DI_PBPC303 D ( IS=492n RS=14.1m BV=200 IBV=10.0u + CJO=102p M=0.333 N=2.45 TT=4.32u ) ) *SRC=PBPC304;DI_PBPC304;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. Bridge Rectifier, per element .MODEL DI_PBPC304 D ( IS=492n RS=14.1m BV=400 IBV=10.0u + CJO=102p M=0.333 N=2.45 TT=4.32u ) ) *SRC=PBPC305;DI_PBPC305;Diodes;Si; 600V 3.00A 3.00us Diodes Inc. Bridge Rectifier, per element .MODEL DI_PBPC305 D ( IS=492n RS=14.1m BV=600 IBV=10.0u + CJO=102p M=0.333 N=2.45 TT=4.32u ) ) *SRC=PBPC306;DI_PBPC306;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. Bridge Rectifier, per element .MODEL DI_PBPC306 D ( IS=492n RS=14.1m BV=800 IBV=10.0u + CJO=102p M=0.333 N=2.45 TT=4.32u ) ) *SRC=PBPC307;DI_PBPC307;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. Bridge Rectifier, per element .MODEL DI_PBPC307 D ( IS=492n RS=14.1m BV=1.00k IBV=10.0u + CJO=102p M=0.333 N=2.45 TT=4.32u ) ) *SRC=RH02;DI_RH02;Diodes;Si; 200V 0.500A 150ns Diodes Inc. Fast Recovery Bridge Rectifier, per node .MODEL DI_RH02 D ( IS=2.25n RS=0.100 BV=200 IBV=5.00u + CJO=24.0p M=0.333 N=1.70 TT=216n ) *SRC=RH04;DI_RH04;Diodes;Si; 400V 0.500A 150ns Diodes Inc. Fast Recovery Bridge Rectifier, per node .MODEL DI_RH04 D ( IS=2.25n RS=0.100 BV=400 IBV=5.00u + CJO=24.0p M=0.333 N=1.70 TT=216n ) *SRC=RH06;DI_RH06;Diodes;Si; 600V 0.500A 250ns Diodes Inc. Fast Recovery Bridge Rectifier, per node .MODEL DI_RH06 D ( IS=2.25n RS=0.100 BV=600 IBV=5.00u + CJO=24.0p M=0.333 N=1.70 TT=360n ) *SRC=W005G;DI_W005G;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_W005G D ( IS=8.63u RS=28.0m BV=50.0 IBV=5.00u + CJO=22.5p M=0.333 N=3.21 TT=4.32u ) *SRC=W01G;DI_W01G;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_W01G D ( IS=8.63u RS=28.0m BV=100 IBV=5.00u + CJO=22.5p M=0.333 N=3.21 TT=4.32u ) *SRC=W02G;DI_W02G;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_W02G D ( IS=8.63u RS=28.0m BV=200 IBV=5.00u + CJO=22.5p M=0.333 N=3.21 TT=4.32u ) *SRC=W04G;DI_W04G;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_W04G D ( IS=8.63u RS=28.0m BV=400 IBV=5.00u + CJO=22.5p M=0.333 N=3.21 TT=4.32u ) *SRC=W06G;DI_W06G;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_W06G D ( IS=8.63u RS=28.0m BV=600 IBV=5.00u + CJO=22.5p M=0.333 N=3.21 TT=4.32u ) *SRC=W08G;DI_W08G;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_W08G D ( IS=8.63u RS=28.0m BV=800 IBV=5.00u + CJO=22.5p M=0.333 N=3.21 TT=4.32u ) *SRC=W10G;DI_W10G;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. Bridge -- for one element .MODEL DI_W10G D ( IS=8.63u RS=28.0m BV=1.00k IBV=5.00u + CJO=22.5p M=0.333 N=3.21 TT=4.32u ) *SRC=1N5817M;DI_1N5817M;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_1N5817M D ( IS=363u RS=25.0m BV=20.0 IBV=1.00m + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=1N5818M;DI_1N5818M;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_1N5818M D ( IS=388u RS=55.3m BV=30.0 IBV=1.00m + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=1N5819HW;DI_1N5819HW;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_1N5819HW D ( IS=191u RS=42.0m BV=40.0 IBV=1.00m + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=1N5819M;DI_1N5819M;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_1N5819M D ( IS=41.5u RS=70.4m BV=40.0 IBV=1.00m + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=B0520LW;DI_B0520LW;Diodes;Si; 20.0V 0.500A 5.00ns Diodes Inc. Schottky .MODEL DI_B0520LW D ( IS=195u RS=49.4m BV=20.0 IBV=250u + CJO=199p M=0.333 N=1.72 TT=7.20n ) *SRC=B0520WS;DI_B0520WS;Diodes;Si; 20.0V 0.500A 5.00ns Diodes Inc. Schottky rectifier .MODEL DI_B0520WS D ( IS=1.96u RS=0.131 BV=20.0 IBV=250u + CJO=170p M=0.333 N=0.907 TT=7.20u ) *SRC=B0530W;DI_B0530W;Diodes;Si; 30.0V 0.500A 5.00ns Diodes Inc. Schottky .MODEL DI_B0530W D ( IS=47.4u RS=26.8m BV=30.0 IBV=130u + CJO=225p M=0.333 N=1.66 TT=7.20n ) *SRC=B0530WS;DI_B0530WS;Diodes;Si; 30.0V 0.500A 10.0ns Diodes Inc. Schottky .MODEL DI_B0530WS D ( IS=897u RS=72.9m BV=30.0 IBV=500u + CJO=79.6p M=0.333 N=2.85 TT=14.4n ) *SRC=B0540W;DI_B0540W;Diodes;Si; 40.0V 0.500A 10.0ns Diodes Inc. Schottky .MODEL DI_B0540W D ( IS=55.9p RS=0.125 BV=40.0 IBV=20.0u + CJO=225p M=0.333 N=0.700 TT=14.4n ) *SRC=B1100;DI_B1100;Diodes;Si; 100V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B1100 D ( IS=89.3u RS=42.2m BV=100 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B1100B;DI_B1100B;Diodes;Si; 100V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B1100B D ( IS=89.3u RS=42.2m BV=100 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B1100LB;DI_B1100LB;Diodes;Si; 100V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B1100LB D ( IS=20.0n RS=24.7m BV=100 IBV=500n + CJO=225p M=0.333 N=1.22 TT=14.4n ) *SRC=B120;DI_B120;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B120 D ( IS=39.6u RS=50.2m BV=20.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B120B;DI_B120B;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B120B D ( IS=39.6u RS=50.2m BV=20.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B130;DI_B130;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130 D ( IS=39.6u RS=50.2m BV=30.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B130B;DI_B130B;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130B D ( IS=39.6u RS=50.2m BV=30.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B130L;DI_B130L;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130L D ( IS=188u RS=18.5m BV=30.0 IBV=1.00m + CJO=331p M=0.333 N=1.65 TT=7.20n ) *SRC=B130LAW;DI_B130LAW;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B130LAW D ( IS=407u RS=75.5m BV=30.0 IBV=1.00m + CJO=119p M=0.333 N=1.70 TT=7.20n ) *SRC=B130LB;DI_B130LB;Diodes;Si; 30.0V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B130LB D ( IS=458u RS=28.0m BV=30.0 IBV=1.00m + CJO=159p M=0.333 N=1.70 TT=14.4n ) *SRC=B140;DI_B140;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B140 D ( IS=39.6u RS=50.2m BV=40.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B140B;DI_B140B;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B140B D ( IS=39.6u RS=50.2m BV=40.0 IBV=500u + CJO=265p M=0.333 N=1.70 TT=7.20n ) *SRC=B140HB;DI_B140HB;Diodes;Si; 40.0V 1.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B140HB D ( IS=31.0u RS=42.1m BV=40.0 IBV=1.00m + CJO=159p M=0.333 N=1.70 TT=14.4n ) *SRC=B150;DI_B150;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B150 D ( IS=15.7u RS=42.0m BV=50.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) *SRC=B150B;DI_B150B;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B150B D ( IS=15.7u RS=42.0m BV=50.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) *SRC=B160;DI_B160;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B160 D ( IS=15.7u RS=42.0m BV=60.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) *SRC=B160B;DI_B160B;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B160B D ( IS=15.7u RS=42.0m BV=60.0 IBV=500u + CJO=133p M=0.333 N=1.70 TT=7.20n ) *SRC=B170;DI_B170;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B170 D ( IS=89.3u RS=42.2m BV=70.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B170B;DI_B170B;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B170B D ( IS=89.3u RS=42.2m BV=70.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B180;DI_B180;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B180 D ( IS=89.3u RS=42.2m BV=80.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B180B;DI_B180B;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B180B D ( IS=89.3u RS=42.2m BV=80.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B190;DI_B190;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B190 D ( IS=89.3u RS=42.2m BV=90.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B190B;DI_B190B;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B190B D ( IS=89.3u RS=42.2m BV=90.0 IBV=500n + CJO=66.3p M=0.333 N=2.45 TT=7.20n ) *SRC=B2100;DI_B2100;Diodes;Si; 100.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B2100 D ( IS=746u RS=21.0m BV=100.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) *SRC=B220;DI_B220;Diodes;Si; 20.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B220 D ( IS=7.98u RS=13.4m BV=20.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B220A;DI_B220A;Diodes;Si; 20.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B220A D ( IS=7.98u RS=13.4m BV=20.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B230;DI_B230;Diodes;Si; 30.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B230 D ( IS=7.98u RS=13.4m BV=30.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B230A;DI_B230A;Diodes;Si; 30.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B230A D ( IS=7.98u RS=13.4m BV=30.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B240;DI_B240;Diodes;Si; 40.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B240 D ( IS=7.98u RS=13.4m BV=40.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B240A;DI_B240A;Diodes;Si; 40.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B240A D ( IS=7.98u RS=13.4m BV=40.0 IBV=500u + CJO=370p M=0.333 N=1.13 TT=1.44n ) *SRC=B250;DI_B250;Diodes;Si; 50.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B250 D ( IS=6.08u RS=14.9m BV=50.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) *SRC=B250A;DI_B250A;Diodes;Si; 50.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B250A D ( IS=6.08u RS=14.9m BV=50.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) *SRC=B260;DI_B260;Diodes;Si; 60.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B260 D ( IS=6.08u RS=14.9m BV=60.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) *SRC=B260A;DI_B260A;Diodes;Si; 60.0V 2.00A 1.00ns Diodes Inc. .MODEL DI_B260A D ( IS=6.08u RS=14.9m BV=60.0 IBV=500u + CJO=370p M=0.333 N=1.55 TT=1.44n ) *SRC=B270;DI_B270;Diodes;Si; 70.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B270 D ( IS=746u RS=21.0m BV=70.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) *SRC=B280;DI_B280;Diodes;Si; 80.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B280 D ( IS=746u RS=21.0m BV=80.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) *SRC=B290;DI_B290;Diodes;Si; 90.0V 2.00A 10.0ns Diodes Inc Schottky .MODEL DI_B290 D ( IS=746u RS=21.0m BV=90.0 IBV=500u + CJO=179p M=0.333 N=2.87 TT=14.4n ) *SRC=B3100;DI_B3100;Diodes;Si; 100V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B3100 D ( IS=916u RS=14.1m BV=100 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) *SRC=B320;DI_B320;Diodes;Si; 20.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B320 D ( IS=9.90n RS=14.0m BV=20.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B320A;DI_B320A;Diodes;Si; 20.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B320A D ( IS=9.90n RS=14.0m BV=20.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B320B;DI_B320B;Diodes;Si; 20.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B320B D ( IS=9.90n RS=14.0m BV=20.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B330;DI_B330;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B330 D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B330A;DI_B330A;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B330A D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B330B;DI_B330B;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B330B D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B340;DI_B340;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B340 D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B340A;DI_B340A;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B340A D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B340B;DI_B340B;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B340B D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B340LA;DI_B340LA;Diodes;Si; 40.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B340LA D ( IS=1.15m RS=17.8m BV=40.0 IBV=2.00m + CJO=411p M=0.333 N=1.70 TT=14.4n ) *SRC=B340LB;DI_B340LB;Diodes;Si; 40.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B340LB D ( IS=1.15m RS=17.8m BV=40.0 IBV=2.00m + CJO=411p M=0.333 N=1.70 TT=14.4n ) *SRC=B350;DI_B350;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B350 D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B350A;DI_B350A;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B350A D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B350B;DI_B350B;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B350B D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B360;DI_B360;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B360 D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B360A;DI_B360A;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B360A D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B360B;DI_B360B;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B360B D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u + CJO=464p M=0.333 N=0.775 TT=7.20n ) *SRC=B370;DI_B370;Diodes;Si; 70.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B370 D ( IS=916u RS=14.1m BV=70.0 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) *SRC=B380;DI_B380;Diodes;Si; 80.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B380 D ( IS=916u RS=14.1m BV=80.0 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) *SRC=B390;DI_B390;Diodes;Si; 90.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_B390 D ( IS=916u RS=14.1m BV=90.0 IBV=500u + CJO=159p M=0.333 N=3.04 TT=14.4n ) *SRC=B520C;DI_B520C;Diodes;Si; 20.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B520C D ( IS=617u RS=10.0m BV=20.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) *SRC=B530C;DI_B530C;Diodes;Si; 30.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B530C D ( IS=617u RS=10.0m BV=30.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) *SRC=B540C;DI_B540C;Diodes;Si; 40.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B540C D ( IS=617u RS=10.0m BV=40.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) *SRC=B550C;DI_B550C;Diodes;Si; 50.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B550C D ( IS=66.7u RS=14.1m BV=50.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) *SRC=B560C;DI_B560C;Diodes;Si; 60.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_B560C D ( IS=66.7u RS=14.1m BV=60.0 IBV=500u + CJO=497p M=0.333 N=1.70 TT=7.20n ) *SRC=BAT1000;DI_BAT1000;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky Barrier Rectifier .MODEL DI_BAT1000 D ( IS=874n RS=65.3m BV=40.0 IBV=100u + CJO=175p M=0.333 N=0.823 TT=7.20n ) *SRC=BAT400D;DI_BAT400D;Diodes;Si; 40.0V 0.500A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT400D D ( IS=1.80u RS=0.103 BV=40.0 IBV=50.0u + CJO=119p M=0.333 N=1.26 TT=7.20n ) *SRC=BAT750;DI_BAT750;Diodes;Si; 40.0V 0.750A 5.00ns Diodes Inc. Schottky .MODEL DI_BAT750 D ( IS=23.1u RS=82.3m BV=40.0 IBV=100u + CJO=225p M=0.333 N=1.16 TT=7.20n ) *SRC=MBRB1530CT;DI_MBRB1530CT;Diodes;Si; 30.0V 15.0A 30.0ns Diodes Inc. Schottky -- one element of device .MODEL DI_MBRB1530CT D ( IS=71.5u RS=2.81m BV=30.0 IBV=100u + CJO=464p M=0.333 N=1.61 TT=43.2n ) *SRC=MBRB1535CT;DI_MBRB1535CT;Diodes;Si; 35.0V 15.0A 30.0ns Diodes Inc. Schottky -- one element of device .MODEL DI_MBRB1535CT D ( IS=71.5u RS=2.81m BV=35.0 IBV=100u + CJO=464p M=0.333 N=1.61 TT=43.2n ) *SRC=MBRB1540CT;DI_MBRB1540CT;Diodes;Si; 40.0V 15.0A 30.0ns Diodes Inc. Schottky -- one element of device .MODEL DI_MBRB1540CT D ( IS=71.5u RS=2.81m BV=40.0 IBV=100u + CJO=464p M=0.333 N=1.61 TT=43.2n ) *SRC=MBRB1540CT;DI_MBRB1540CT;Diodes;Si; 40.0V 15.0A 30.0ns Diodes Inc. Schottky -- one element of device .MODEL DI_MBRB1540CT D ( IS=71.5u RS=2.81m BV=40.0 IBV=100u + CJO=464p M=0.333 N=1.61 TT=43.2n ) *SRC=MBRB20100CT;DI_MBRB20100CT;Diodes;Si; 100V 20.0A 10.0ns Diodes Inc. Schottky Rectifier, Dual Unit, Model for One Node .MODEL DI_MBRB20100CT D ( IS=750u RS=3.34m BV=100 IBV=100u + CJO=508p M=0.333 N=2.41 TT=14.4n ) *SRC=MBRB2070CT;DI_MBRB2070CT;Diodes;Si; 70.0V 20.0A 10.0ns Diodes Inc. Schottky Rectifier, Dual Unit, Model for One Node .MODEL DI_MBRB2070CT D ( IS=750u RS=3.34m BV=70.0 IBV=100u + CJO=508p M=0.333 N=2.41 TT=14.4n ) *SRC=MBRB2080CT;DI_MBRB2080CT;Diodes;Si; 80.0V 20.0A 10.0ns Diodes Inc. Schottky Rectifier, Dual Unit, Model for One Node .MODEL DI_MBRB2080CT D ( IS=750u RS=3.34m BV=80.0 IBV=100u + CJO=508p M=0.333 N=2.41 TT=14.4n ) *SRC=MBRB2090CT;DI_MBRB2090CT;Diodes;Si; 90.0V 20.0A 10.0ns Diodes Inc. Schottky Rectifier, Dual Unit, Model for One Node .MODEL DI_MBRB2090CT D ( IS=750u RS=3.34m BV=90.0 IBV=100u + CJO=508p M=0.333 N=2.41 TT=14.4n ) *SRC=MBRD1035CTL;DI_MBRD1035CTL;Diodes;Si; 35.0V 5.00A 10.0ns Diodes Inc Schottky, Dual, Model for one node .MODEL DI_MBRD1035CTL D ( IS=2.14m RS=6.38m BV=35.0 IBV=2.00m + CJO=629p M=0.333 N=3.30 TT=14.4n ) *SRC=MBRD1040;DI_MBRD1040;Diodes;Si; 40.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_MBRD1040 D ( IS=354u RS=4.20m BV=40.0 IBV=300u + CJO=2.65n M=0.333 N=1.19 TT=7.20n ) *SRC=MBRD1040CT;DI_MBRD1040CT;Diodes;Si; 40.0V 5.00A 10.0ns Diodes Inc Schottky, Dual, Model for one node .MODEL DI_MBRD1040CT D ( IS=2.14m RS=6.38m BV=40.0 IBV=150u + CJO=925p M=0.333 N=3.30 TT=14.4n ) *SRC=MBRD460CT;DI_MBRD460CT;Diodes;Si; 60.0V 2.00A 10.0ns Diodes Inc Schottky, Dual, Model for one node .MODEL DI_MBRD460CT D ( IS=1.45m RS=7.62u BV=60.0 IBV=100u + CJO=333p M=0.333 N=4.78 TT=14.4n ) *SRC=MBRD835L;DI_MBRD835L;Diodes;Si; 35.0V 8.00A 10.0ns Diodes Inc Schottky .MODEL DI_MBRD835L D ( IS=9.28u RS=9.26m BV=35.0 IBV=1.40m + CJO=1.11n M=0.333 N=1.06 TT=14.4n ) *SRC=MBRM3100;DI_MBRM3100;Diodes;Si; 100V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_MBRM3100 D ( IS=88.1u RS=14.0m BV=100 IBV=100u + CJO=239p M=0.333 N=2.12 TT=7.20n ) *SRC=MBRM360;DI_MBRM360;Diodes;Si; 60.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_MBRM360 D ( IS=5.99u RS=16.5m BV=60.0 IBV=200u + CJO=240p M=0.333 N=1.27 TT=14.4n ) *SRC=MBRM5100;DI_MBRM5100;Diodes;Si; 100V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_MBRM5100 D ( IS=62.9u RS=6.79m BV=100 IBV=200u + CJO=530p M=0.333 N=1.88 TT=14.4n ) *SRC=MBRM560;DI_MBRM560;Diodes;Si; 60.0V 5.00A 5.00ns Diodes Inc. Schottky .MODEL DI_MBRM560 D ( IS=20.1u RS=8.40m BV=60.0 IBV=200u + CJO=207p M=0.333 N=1.70 TT=7.20n ) *SRC=MBRM760;DI_MBRM760;Diodes;Si; 60.0V 7.00A 10.0ns Diodes Inc Schottky .MODEL DI_MBRM760 D ( IS=849n RS=9.63m BV=60.0 IBV=200u + CJO=693p M=0.333 N=1.07 TT=14.4n ) *SRC=SBG1025L;DI_SBG1025L;Diodes;Si; 25.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBG1025L D ( IS=2.36u RS=7.72m BV=25.0 IBV=1.00m + CJO=636p M=0.333 N=0.722 TT=7.20n ) *SRC=SBG1030CT;DI_SBG1030CT;Diodes;Si; 30.0V 10.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG1030CT D ( IS=47.2u RS=6.69m BV=30.0 IBV=1.00m + CJO=398p M=0.333 N=1.41 TT=7.20n ) *SRC=SBG1030L;DI_SBG1030L;Diodes;Si; 30.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBG1030L D ( IS=2.36u RS=7.72m BV=30.0 IBV=1.00m + CJO=636p M=0.333 N=0.722 TT=7.20n ) *SRC=SBG1035CT;DI_SBG1035CT;Diodes;Si; 35.0V 10.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG1035CT D ( IS=47.2u RS=6.69m BV=35.0 IBV=1.00m + CJO=398p M=0.333 N=1.41 TT=7.20n ) *SRC=SBG1040CT;DI_SBG1040CT;Diodes;Si; 40.0V 10.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG1040CT D ( IS=47.2u RS=6.69m BV=40.0 IBV=1.00m + CJO=398p M=0.333 N=1.41 TT=7.20n ) *SRC=SBG1045CT;DI_SBG1045CT;Diodes;Si; 45.0V 10.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG1045CT D ( IS=47.2u RS=6.69m BV=45.0 IBV=1.00m + CJO=398p M=0.333 N=1.41 TT=7.20n ) *SRC=SBG1630CT;DI_SBG1630CT;Diodes;Si; 30.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG1630CT D ( IS=47.2u RS=6.69m BV=30.0 IBV=1.00m + CJO=464p M=0.333 N=1.41 TT=7.20n ) *SRC=SBG1635CT;DI_SBG1635CT;Diodes;Si; 35.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG1635CT D ( IS=47.2u RS=6.69m BV=35.0 IBV=1.00m + CJO=464p M=0.333 N=1.41 TT=7.20n ) *SRC=SBG1640CT;DI_SBG1640CT;Diodes;Si; 40.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG1640CT D ( IS=47.2u RS=6.69m BV=40.0 IBV=1.00m + CJO=464p M=0.333 N=1.41 TT=7.20n ) *SRC=SBG1645CT;DI_SBG1645CT;Diodes;Si; 45.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG1645CT D ( IS=47.2u RS=6.69m BV=45.0 IBV=1.00m + CJO=464p M=0.333 N=1.41 TT=7.20n ) *SRC=SBG2030CT;DI_SBG2030CT;Diodes;Si; 30.0V 20.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG2030CT D ( IS=7.84m RS=3.91m BV=30.0 IBV=1.00m + CJO=1.72n M=0.333 N=2.73 TT=7.20n ) =============================================================================================== *SRC=SBG2035CT;DI_SBG2035CT;Diodes;Si; 35.0V 20.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG2035CT D ( IS=7.84m RS=3.91m BV=35.0 IBV=1.00m + CJO=1.72n M=0.333 N=2.73 TT=7.20n ) =============================================================================================== *SRC=SBG2040CT;DI_SBG2040CT;Diodes;Si; 40.0V 20.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG2040CT D ( IS=7.84m RS=3.91m BV=40.0 IBV=1.00m + CJO=1.72n M=0.333 N=2.73 TT=7.20n ) =============================================================================================== *SRC=SBG2045CT;DI_SBG2045CT;Diodes;Si; 45.0V 20.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG2045CT D ( IS=7.84m RS=3.91m BV=45.0 IBV=1.00m + CJO=1.72n M=0.333 N=2.73 TT=7.20n ) =============================================================================================== *SRC=SBG3030CT;DI_SBG3030CT;Diodes;Si; 30.0V 30.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG3030CT D ( IS=31.1u RS=3.70m BV=30.0 IBV=1.00m + CJO=796p M=0.333 N=1.17 TT=7.20n ) =============================================================================================== *SRC=SBG3040CT;DI_SBG3040CT;Diodes;Si; 40.0V 30.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG3040CT D ( IS=31.1u RS=3.70m BV=40.0 IBV=1.00m + CJO=796p M=0.333 N=1.17 TT=7.20n ) =============================================================================================== *SRC=SBG3045CT;DI_SBG3045CT;Diodes;Si; 45.0V 30.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG3045CT D ( IS=31.1u RS=3.70m BV=45.0 IBV=1.00m + CJO=796p M=0.333 N=1.17 TT=7.20n ) =============================================================================================== *SRC=SBG3050CT;DI_SBG3050CT;Diodes;Si; 50.0V 30.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG3050CT D ( IS=319u RS=3.50m BV=50.0 IBV=1.00m + CJO=796p M=0.333 N=1.69 TT=7.20n ) =============================================================================================== *SRC=SBG3060CT;DI_SBG3060CT;Diodes;Si; 60.0V 30.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBG3060CT D ( IS=319u RS=3.50m BV=60.0 IBV=1.00m + CJO=796p M=0.333 N=1.69 TT=7.20n ) =============================================================================================== *SRC=SBM1040;DI_SBM1040;Diodes;Si; 40.0V 10.0A 10.0ns Diodes Inc Schottky Rectifier .MODEL DI_SBM1040 D ( IS=63.8u RS=4.18m BV=40.0 IBV=300u + CJO=2.39n M=0.333 N=1.36 TT=14.4n ) *SRC=SBM1040CT;DI_SBM1040CT;Diodes;Si; 40.0V 5.00A 3.00us Diodes Inc. Schottky, dual, per node .MODEL DI_SBM1040CT D ( IS=2.88u RS=8.40m BV=40.0 IBV=150u + CJO=1.33n M=0.333 N=1.03 TT=4.32u ) *SRC=SBM340;DI_SBM340;Diodes;Si; 40.0V 3.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBM340 D ( IS=2.98n RS=19.4m BV=40.0 IBV=500u + CJO=333p M=0.333 N=0.700 TT=14.4n ) *SRC=SBM540;DI_SBM540;Diodes;Si; 40.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBM540 D ( IS=19.7u RS=8.40m BV=40.0 IBV=500u + CJO=557p M=0.333 N=1.28 TT=14.4n ) *SRC=SK32;DI_SK32;Diodes;Si; 20.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SK32 D ( IS=50.5n RS=23.8m BV=20.0 IBV=500u + CJO=555p M=0.333 N=0.700 TT=7.20n ) *SRC=SK33;DI_SK33;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SK33 D ( IS=50.5n RS=23.8m BV=30.0 IBV=500u + CJO=555p M=0.333 N=0.700 TT=7.20n ) *SRC=SK34;DI_SK34;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SK34 D ( IS=50.5n RS=23.8m BV=50.0 IBV=500u + CJO=555p M=0.333 N=0.700 TT=7.20n ) *SRC=SK35;DI_SK35;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SK35 D ( IS=234u RS=24.0m BV=50.0 IBV=500u + CJO=555p M=0.333 N=1.90 TT=7.20n ) *SRC=SK36;DI_SK36;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SK36 D ( IS=234u RS=24.0m BV=60.0 IBV=500u + CJO=555p M=0.333 N=1.90 TT=7.20n ) *SRC=1N4001;DI_1N4001;Diodes;Si; 50.0V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4001 D ( IS=76.9p RS=42.0m BV=50.0 IBV=5.00u + CJO=39.8p M=0.333 N=1.45 TT=4.32u ) *************************************************************************************************************************************** *SRC=1N4001G;DI_1N4001G;Diodes;Si; 50.0V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4001G D ( IS=65.4p RS=42.2m BV=50.0 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** ************************************************************************************************************************************** *SRC=1N4001GL;DI_1N4001GL;Diodes;Si; 50.0V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4001GL D ( IS=65.4p RS=42.2m BV=50.0 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *SRC=1N4002;DI_1N4002;Diodes;Si; 100V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4002 D ( IS=76.9p RS=42.0m BV=100 IBV=5.00u + CJO=39.8p M=0.333 N=1.45 TT=4.32u ) *************************************************************************************************************************************** *SRC=1N4002G;DI_1N4002G;Diodes;Si; 100V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4002G D ( IS=65.4p RS=42.2m BV=100 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *************************************************************************************************************************************** *SRC=1N4002GL;DI_1N4002GL;Diodes;Si; 100V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4002GL D ( IS=65.4p RS=42.2m BV=100 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *SRC=1N4003;DI_1N4003;Diodes;Si; 200V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4003 D ( IS=76.9p RS=42.0m BV=200 IBV=5.00u + CJO=39.8p M=0.333 N=1.45 TT=4.32u ) *************************************************************************************************************************************** *SRC=1N4003G;DI_1N4003G;Diodes;Si; 200V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4003G D ( IS=65.4p RS=42.2m BV=200 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *************************************************************************************************************************************** *SRC=1N4003GL;DI_1N4003GL;Diodes;Si; 200V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4003GL D ( IS=65.4p RS=42.2m BV=200 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *SRC=1N4004;DI_1N4004;Diodes;Si; 400V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4004 D ( IS=76.9p RS=42.0m BV=400 IBV=5.00u + CJO=39.8p M=0.333 N=1.45 TT=4.32u ) *************************************************************************************************************************************** *SRC=1N4004G;DI_1N4004G;Diodes;Si; 400V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4004G D ( IS=65.4p RS=42.2m BV=400 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *************************************************************************************************************************************** *SRC=1N4004GL;DI_1N4004GL;Diodes;Si; 400V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4004GL D ( IS=65.4p RS=42.2m BV=400 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *SRC=1N4005;DI_1N4005;Diodes;Si; 600V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4005 D ( IS=76.9p RS=42.0m BV=600 IBV=5.00u + CJO=26.5p M=0.333 N=1.45 TT=4.32u ) *************************************************************************************************************************************** *SRC=1N4005G;DI_1N4005G;Diodes;Si; 600V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4005G D ( IS=65.4p RS=42.2m BV=600 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *************************************************************************************************************************************** *SRC=1N4005GL;DI_1N4005GL;Diodes;Si; 600V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4005GL D ( IS=65.4p RS=42.2m BV=600 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *SRC=1N4006;DI_1N4006;Diodes;Si; 800V 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4006 D ( IS=76.9p RS=42.0m BV=800 IBV=5.00u + CJO=26.5p M=0.333 N=1.45 TT=4.32u ) *************************************************************************************************************************************** *SRC=1N4006G;DI_1N4006G;Diodes;Si; 800V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4006G D ( IS=65.4p RS=42.2m BV=800 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *************************************************************************************************************************************** *SRC=1N4006GL;DI_1N4006GL;Diodes;Si; 800V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4006GL D ( IS=65.4p RS=42.2m BV=800 IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) *************************************************************************************************************************************** *SRC=1N4007;DI_1N4007;Diodes;Si; 1.00kV 1.00A 3.00us Diodes, Inc. diode .MODEL DI_1N4007 D ( IS=76.9p RS=42.0m BV=1.00k IBV=5.00u + CJO=26.5p M=0.333 N=1.45 TT=4.32u ) *************************************************************************************************************************************** *SRC=1N4007G;DI_1N4007G;Diodes;Si; 1.00kV 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4007G D ( IS=65.4p RS=42.2m BV=1.00k IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) ************************************************************************************************************************************** *************************************************************************************************************************************** *SRC=1N4007GL;DI_1N4007GL;Diodes;Si; 1.00kV 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier .MODEL DI_1N4007GL D ( IS=65.4p RS=42.2m BV=1.00k IBV=5.00u + CJO=14.8p M=0.333 N=1.36 TT=2.88u ) ************************************************************************************************************************************** *SRC=1N5400;DI_1N5400;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5400 D ( IS=63.0n RS=14.1m BV=50.0 IBV=10.0u + CJO=125p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5401;DI_1N5401;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5401 D ( IS=63.0n RS=14.1m BV=100 IBV=10.0u + CJO=125p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5402;DI_1N5402;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5402 D ( IS=63.0n RS=14.1m BV=200 IBV=10.0u + CJO=125p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5404;DI_1N5404;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5404 D ( IS=63.0n RS=14.1m BV=400 IBV=10.0u + CJO=125p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5406;DI_1N5406;Diodes;Si; 600V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5406 D ( IS=63.0n RS=14.1m BV=600 IBV=10.0u + CJO=53.0p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5407;DI_1N5407;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5407 D ( IS=63.0n RS=14.1m BV=800 IBV=10.0u + CJO=53.0p M=0.333 N=1.70 TT=4.32u ) *SRC=1N5408;DI_1N5408;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. Standard Rectifier .MODEL DI_1N5408 D ( IS=63.0n RS=14.1m BV=1.00k IBV=10.0u + CJO=53.0p M=0.333 N=1.70 TT=4.32u ) *SRC=6A05;DI_6A05;Diodes;Si; 50.0V 6.00A 2.00us Diodes Inc. .MODEL DI_6A05 D ( IS=52.4n RS=7.00m BV=50.0 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=6A1;DI_6A1;Diodes;Si; 100V 6.00A 2.00us Diodes Inc. .MODEL DI_6A1 D ( IS=52.4n RS=7.00m BV=100 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=6A10;DI_6A10;Diodes;Si; 1.00kV 6.00A 2.00us Diodes Inc. .MODEL DI_6A10 D ( IS=52.4n RS=7.00m BV=1.00k IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=6A2;DI_6A2;Diodes;Si; 200V 6.00A 2.00us Diodes Inc. .MODEL DI_6A2 D ( IS=52.4n RS=7.00m BV=200 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=6A4;DI_6A4;Diodes;Si; 400V 6.00A 2.00us Diodes Inc. .MODEL DI_6A4 D ( IS=52.4n RS=7.00m BV=400 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=6A6;DI_6A6;Diodes;Si; 600V 6.00A 2.00us Diodes Inc. .MODEL DI_6A6 D ( IS=52.4n RS=7.00m BV=600 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=6A8;DI_6A8;Diodes;Si; 800V 6.00A 2.00us Diodes Inc. .MODEL DI_6A8 D ( IS=52.4n RS=7.00m BV=800 IBV=10.0u + CJO=60.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S1A;DI_S1A;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1A D ( IS=7.31e-018 RS=42.0m BV=50.0 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1AB;DI_S1AB;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1AB D ( IS=7.31e-018 RS=42.0m BV=50.0 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1B;DI_S1B;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1B D ( IS=7.31e-018 RS=42.0m BV=100 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1BB;DI_S1BB;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1BB D ( IS=7.31e-018 RS=42.0m BV=100 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1D;DI_S1D;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1D D ( IS=7.31e-018 RS=42.0m BV=200 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1DB;DI_S1DB;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1DB D ( IS=7.31e-018 RS=42.0m BV=200 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1G;DI_S1G;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1G D ( IS=7.31e-018 RS=42.0m BV=400 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1GB;DI_S1GB;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1GB D ( IS=7.31e-018 RS=42.0m BV=400 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1J;DI_S1J;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1J D ( IS=7.31e-018 RS=42.0m BV=600 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1JB;DI_S1JB;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1JB D ( IS=7.31e-018 RS=42.0m BV=600 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1K;DI_S1K;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1K D ( IS=7.31e-018 RS=42.0m BV=800 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1KB;DI_S1KB;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1KB D ( IS=7.31e-018 RS=42.0m BV=800 IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1M;DI_S1M;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1M D ( IS=7.31e-018 RS=42.0m BV=1.00k IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S1MB;DI_S1MB;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Rectifier .MODEL DI_S1MB D ( IS=7.31e-018 RS=42.0m BV=1.00k IBV=5.00u + CJO=42.4p M=0.333 N=0.775 TT=4.32u ) *SRC=S2A;DI_S2A;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. .MODEL DI_S2A D ( IS=1.30u RS=8.92m BV=50.0 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2AA;DI_S2AA;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. .MODEL DI_S2AA D ( IS=1.30u RS=8.92m BV=50.0 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2B;DI_S2B;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. .MODEL DI_S2B D ( IS=1.30u RS=8.92m BV=100 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2BA;DI_S2BA;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. .MODEL DI_S2BA D ( IS=1.30u RS=8.92m BV=100 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2D;DI_S2D;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. .MODEL DI_S2D D ( IS=1.30u RS=8.92m BV=200 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2DA;DI_S2DA;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. .MODEL DI_S2DA D ( IS=1.30u RS=8.92m BV=200 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2G;DI_S2G;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. .MODEL DI_S2G D ( IS=1.30u RS=8.92m BV=400 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2GA;DI_S2GA;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. .MODEL DI_S2GA D ( IS=1.30u RS=8.92m BV=400 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2J;DI_S2J;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. .MODEL DI_S2J D ( IS=1.30u RS=8.92m BV=600 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2JA;DI_S2JA;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. .MODEL DI_S2JA D ( IS=1.30u RS=8.92m BV=600 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2K;DI_S2K;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. .MODEL DI_S2K D ( IS=1.30u RS=8.92m BV=800 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2KA;DI_S2KA;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. .MODEL DI_S2KA D ( IS=1.30u RS=8.92m BV=800 IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2M;DI_S2M;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. .MODEL DI_S2M D ( IS=1.30u RS=8.92m BV=1.00k IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S2MA;DI_S2MA;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. .MODEL DI_S2MA D ( IS=1.30u RS=8.92m BV=1.00k IBV=5.00u + CJO=37.0p M=0.333 N=2.58 TT=4.32u ) *SRC=S3A;DI_S3A;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3A D ( IS=1.37n RS=14.0m BV=50.0 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3A;DI_S3A;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3A D ( IS=1.37n RS=14.0m BV=50.0 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3BB;S3BB;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. - .MODEL S3BB D ( IS=1.37n RS=14.0m BV=100 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3BB;S3BB;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. - .MODEL S3BB D ( IS=1.37n RS=14.0m BV=100 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3D;DI_S3D;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3D D ( IS=1.37n RS=14.0m BV=200 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3DB;DI_S3DB;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3DB D ( IS=1.37n RS=14.0m BV=200 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3GB;DI_S3GB;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3GB D ( IS=1.37n RS=14.0m BV=400 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3GB;DI_S3GB;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3GB D ( IS=1.37n RS=14.0m BV=400 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3K;DI_S3K;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3K D ( IS=1.37n RS=14.0m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3K;DI_S3K;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. - .MODEL DI_S3K D ( IS=1.37n RS=14.0m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3M;DI_S3M;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. - .MODEL DI_S3M D ( IS=1.37n RS=14.0m BV=1.00k IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S3M;DI_S3M;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. - .MODEL DI_S3M D ( IS=1.37n RS=14.0m BV=1.00k IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=4.32u ) *SRC=S5AC;DI_S5AC;Diodes;Si; 50.0V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5AC D ( IS=2.28n RS=8.40m BV=50.0 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5BC;DI_S5BC;Diodes;Si; 100V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5BC D ( IS=2.28n RS=8.40m BV=100 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5DC;DI_S5DC;Diodes;Si; 200V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5DC D ( IS=2.28n RS=8.40m BV=200 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5GC;DI_S5GC;Diodes;Si; 400V 5.00A 2.00us Diodes Inc. .MODEL DI_S5GC D ( IS=2.28n RS=8.40m BV=400 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5JC;DI_S5JC;Diodes;Si; 600V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5JC D ( IS=2.28n RS=8.40m BV=600 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5KC;DI_S5KC;Diodes;Si; 800V 5.00A 2.00us Diodes Inc. - .MODEL DI_S5KC D ( IS=2.28n RS=8.40m BV=800 IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=S5MC;DI_S5MC;Diodes;Si; 1.00kV 5.00A 2.00us Diodes Inc. - .MODEL DI_S5MC D ( IS=2.28n RS=8.40m BV=1.00k IBV=10.0u + CJO=74.0p M=0.333 N=1.70 TT=2.88u ) *SRC=1N4933;DI_1N4933;Diodes;Si; 50.0V 1.00A 200ns Diodes Inc. Fast Rectifier .MODEL DI_1N4933 D ( IS=830n RS=34.0m BV=50.0 IBV=5.00u + CJO=26.5p M=0.333 N=2.46 TT=288n ) *SRC=1N4934;DI_1N4934;Diodes;Si; 100V 1.00A 200ns Diodes Inc. Fast Rectifier .MODEL DI_1N4934 D ( IS=830n RS=34.0m BV=100 IBV=5.00u + CJO=26.5p M=0.333 N=2.46 TT=288n ) *SRC=1N4935;DI_1N4935;Diodes;Si; 200V 1.00A 200ns Diodes Inc. Fast Rectifier .MODEL DI_1N4935 D ( IS=830n RS=34.0m BV=200 IBV=5.00u + CJO=26.5p M=0.333 N=2.46 TT=288n ) *SRC=1N4936;DI_1N4936;Diodes;Si; 400V 1.00A 200ns Diodes Inc. Fast Rectifier .MODEL DI_1N4936 D ( IS=830n RS=34.0m BV=400 IBV=5.00u + CJO=26.5p M=0.333 N=2.46 TT=288n ) *SRC=1N4937;DI_1N4937;Diodes;Si; 600V 1.00A 200ns Diodes Inc. Fast Rectifier .MODEL DI_1N4937 D ( IS=830n RS=34.0m BV=600 IBV=5.00u + CJO=26.5p M=0.333 N=2.46 TT=288n ) *SRC=DL4933;DI_DL4933;Diodes;Si; 50.0V 1.00A 200ns Diodes Inc. Fast Recovery Rectifier .MODEL DI_DL4933 D ( IS=4.25n RS=25.0m BV=50.0 IBV=100u + CJO=26.5p M=0.333 N=1.70 TT=288n ) *SRC=DL4934;DI_DL4934;Diodes;Si; 100V 1.00A 200ns Diodes Inc. Fast Recovery Rectifier .MODEL DI_DL4934 D ( IS=4.25n RS=25.0m BV=100 IBV=100u + CJO=26.5p M=0.333 N=1.70 TT=288n ) *SRC=DL4935;DI_DL4935;Diodes;Si; 200V 1.00A 200ns Diodes Inc. Fast Recovery Rectifier .MODEL DI_DL4935 D ( IS=4.25n RS=25.0m BV=200 IBV=100u + CJO=26.5p M=0.333 N=1.70 TT=288n ) *SRC=DL4936;DI_DL4936;Diodes;Si; 400V 1.00A 200ns Diodes Inc. Fast Recovery Rectifier .MODEL DI_DL4936 D ( IS=4.25n RS=25.0m BV=400 IBV=100u + CJO=26.5p M=0.333 N=1.70 TT=288n ) *SRC=DL4937;DI_DL4937;Diodes;Si; 600V 1.00A 200ns Diodes Inc. Fast Recovery Rectifier .MODEL DI_DL4937 D ( IS=4.25n RS=25.0m BV=600 IBV=100u + CJO=26.5p M=0.333 N=1.70 TT=288n ) *SRC=ES1A;DI_ES1A;Diodes;Si; 50.0V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1A D ( IS=123n RS=42.0m BV=50.0 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) *SRC=ES1B;DI_ES1B;Diodes;Si; 100V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1B D ( IS=123n RS=42.0m BV=100 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) *SRC=ES1C;DI_ES1C;Diodes;Si; 150V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1C D ( IS=123n RS=42.0m BV=150 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) *SRC=ES1D;DI_ES1D;Diodes;Si; 200V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1D D ( IS=123n RS=42.0m BV=200 IBV=5.00u + CJO=18.5p M=0.333 N=2.12 TT=28.8n ) *SRC=ES1G;DI_ES1G;Diodes;Si; 400V 1.00A 20.0ns Diodes Inc. .MODEL DI_ES1G D ( IS=373n RS=64.3m BV=400 IBV=5.00u + CJO=18.5p M=0.333 N=2.84 TT=28.8n ) *SRC=ES2A;DI_ES2A;Diodes;Si; 50.0V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2A D ( IS=267n RS=21.0m BV=50.0 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ***************************************************************************************** *SRC=ES2AA;DI_ES2AA;Diodes;Si; 50.0V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2AA D ( IS=267n RS=21.0m BV=50.0 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) **************************************************************************************** *SRC=ES2B;DI_ES2B;Diodes;Si; 100V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2B D ( IS=267n RS=21.0m BV=100 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) **************************************************************************************** SRC=ES2BA;DI_ES2BA;Diodes;Si; 100V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2BA D ( IS=267n RS=21.0m BV=100 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) *************************************************************************************** *SRC=ES2C;DI_ES2C;Diodes;Si; 150V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2C D ( IS=267n RS=21.0m BV=150 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) *************************************************************************************** *SRC=ES2CA;DI_ES2CA;Diodes;Si; 150V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2CA D ( IS=267n RS=21.0m BV=150 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ***************************************************************************************** *SRC=ES2D;DI_ES2D;Diodes;Si; 200V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2D D ( IS=267n RS=21.0m BV=200 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ***************************************************************************************** *SRC=ES2DA;DI_ES2DA;Diodes;Si; 200V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2DA D ( IS=267n RS=21.0m BV=200 IBV=5.00u + CJO=83.5p M=0.333 N=1.70 TT=36.0n ) ***************************************************************************************** *SRC=ES2G;DI_ES2G;Diodes;Si; 400V 2.00A 25.0ns Diodes Inc. Fast Rectifier .MODEL DI_ES2G D ( IS=3.92n RS=21.0m BV=400 IBV=5.00u + CJO=83.5p M=0.333 N=1.95 TT=36.0n ) *SRC=ES3A;DI_ES3A;Diodes;Si; 50.0V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3A D ( IS=7.27p RS=22.4m BV=50.0 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3AB;DI_ES3AB;Diodes;Si; 50.0V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3AB D ( IS=7.27p RS=22.4m BV=50.0 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3B;DI_ES3B;Diodes;Si; 100V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3B D ( IS=7.27p RS=22.4m BV=100 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3BB;DI_ES3BB;Diodes;Si; 100V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3BB D ( IS=7.27p RS=22.4m BV=100 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3C;DI_ES3C;Diodes;Si; 150V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3C D ( IS=7.27p RS=22.4m BV=150 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3CB;DI_ES3CB;Diodes;Si; 150V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3CB D ( IS=7.27p RS=22.4m BV=150 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3D;DI_ES3D;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3D D ( IS=7.27p RS=22.4m BV=200 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=ES3DB;DI_ES3DB;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. .MODEL DI_ES3DB D ( IS=7.27p RS=22.4m BV=200 IBV=10.0u + CJO=83.2p M=0.333 N=0.700 TT=36.0n ) *SRC=MURB1610CT;DI_MURB1610CT;Diodes;Si; 100V 16.0A 25.0ns Diodes Inc. Fast Rectifier -- for one element .MODEL DI_MURB1610CT D ( IS=3.19n RS=3.67m BV=100 IBV=5.00u + CJO=225p M=0.333 N=1.59 TT=36.0n ) *SRC=MURB1620CT;DI_MURB1620CT;Diodes;Si; 200V 16.0A 25.0ns Diodes Inc. Fast Rectifier -- for one element .MODEL DI_MURB1620CT D ( IS=3.19n RS=3.67m BV=200 IBV=5.00u + CJO=225p M=0.333 N=1.59 TT=36.0n ) *SRC=MURS120;DI_MURS120;Diodes;Si; 200V 1.00A 25.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MURS120 D ( IS=17.1n RS=20.6m BV=200 IBV=2.00u + CJO=60.0p M=0.333 N=1.73 TT=36.0n ) ************************************************************************************************************************************ *SRC=MURS140;DI_MURS140;Diodes;Si; 400V 1.00A 50.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MURS140 D ( IS=17.1n RS=20.6m BV=400 IBV=2.00u + CJO=45.0p M=0.333 N=1.73 TT=72.0n ) *********************************************************************************************************************************** *SRC=MURS160;DI_MURS160;Diodes;Si; 600V 1.00A 50.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MURS160 D ( IS=17.1n RS=20.6m BV=600 IBV=2.00u + CJO=45.0p M=0.333 N=1.73 TT=72.0n ) *********************************************************************************************************************************** *SRC=MURS320;DI_MURS320;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. Super Fast Rectifier .MODEL DI_MURS320 D ( IS=11.8n RS=7.89m BV=200 IBV=5.00u + CJO=45.0p M=0.333 N=1.56 TT=36.0n ) *********************************************************************************************************************************** *SRC=PR1001G;DI_PR1001G;Diodes;Si; 50.0V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_PR1001G D ( IS=5.00n RS=29.8m BV=50.0 IBV=5.00u + CJO=27.8p M=0.333 N=1.72 TT=216n ) *SRC=PR1002G;DI_PR1002G;Diodes;Si; 100V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_PR1002G D ( IS=5.00n RS=29.8m BV=100 IBV=5.00u + CJO=27.8p M=0.333 N=1.72 TT=216n ) *SRC=PR1003G;DI_PR1003G;Diodes;Si; 200V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_PR1003G D ( IS=5.00n RS=29.8m BV=200 IBV=5.00u + CJO=27.8p M=0.333 N=1.72 TT=216n ) *SRC=PR1004G;DI_PR1004G;Diodes;Si; 400V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_PR1004G D ( IS=5.00n RS=29.8m BV=400 IBV=5.00u + CJO=27.8p M=0.333 N=1.72 TT=216n ) *SRC=PR1005G;DI_PR1005G;Diodes;Si; 600V 1.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_PR1005G D ( IS=5.00n RS=29.8m BV=600 IBV=5.00u + CJO=19.9p M=0.333 N=1.72 TT=360n ) *SRC=PR1006G;DI_PR1006G;Diodes;Si; 800V 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_PR1006G D ( IS=5.00n RS=29.8m BV=800 IBV=5.00u + CJO=19.9p M=0.333 N=1.72 TT=720n ) *SRC=PR1007G;DI_PR1007G;Diodes;Si; 1.00kV 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_PR1007G D ( IS=5.00n RS=29.8m BV=1.00k IBV=5.00u + CJO=19.9p M=0.333 N=1.72 TT=720n ) *SRC=PR6001;DI_PR6001;Diodes;Si; 50.0V 6.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_PR6001 D ( IS=863n RS=12.6m BV=50.0 IBV=10.0u + CJO=663p M=0.333 N=1.70 TT=216n ) *SRC=RS1A;DI_RS1A;Diodes;Si; 50.0V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1A D ( IS=948n RS=81.3m BV=50.0 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************* *SRC=RS1AB;DI_RS1AB;Diodes;Si; 50.0V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1AB D ( IS=948n RS=81.3m BV=50.0 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************* *SRC=RS1B;DI_RS1B;Diodes;Si; 100V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1B D ( IS=948n RS=81.3m BV=100 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1BB;DI_RS1BB;Diodes;Si; 100V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1BB D ( IS=948n RS=81.3m BV=100 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1D;DI_RS1D;Diodes;Si; 200V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1D D ( IS=948n RS=81.3m BV=200 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1DB;DI_RS1DB;Diodes;Si; 200V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1DB D ( IS=948n RS=81.3m BV=200 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1G;DI_RS1G;Diodes;Si; 400V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1G D ( IS=948n RS=81.3m BV=400 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1GB;DI_RS1GB;Diodes;Si; 400V 1.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS1GB D ( IS=948n RS=81.3m BV=400 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=216n ) ************************************************************************************************************************************** *SRC=RS1J;DI_RS1J;Diodes;Si; 600V 1.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS1J D ( IS=948n RS=81.3m BV=600 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=360n ) ************************************************************************************************************************************** *SRC=RS1JB;DI_RS1JB;Diodes;Si; 600V 1.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS1JB D ( IS=948n RS=81.3m BV=600 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=360n ) ************************************************************************************************************************************** *SRC=RS1K;DI_RS1K;Diodes;Si; 800V 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS1K D ( IS=948n RS=81.3m BV=800 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=720n ) ************************************************************************************************************************************** *SRC=RS1KB;DI_RS1KB;Diodes;Si; 800V 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS1KB D ( IS=948n RS=81.3m BV=800 IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=720n ) ************************************************************************************************************************************** *SRC=RS1M;DI_RS1M;Diodes;Si; 1.00kV 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS1M D ( IS=948n RS=81.3m BV=1.00k IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=720n ) ************************************************************************************************************************************** *SRC=RS1MB;DI_RS1MB;Diodes;Si; 1.00kV 1.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS1MB D ( IS=948n RS=81.3m BV=1.00k IBV=5.00u + CJO=27.7p M=0.333 N=2.48 TT=720n ) ************************************************************************************************************************************** *SRC=RS2A;DI_RS2A;Diodes;Si; 50.0V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2A D ( IS=169u RS=4.81m BV=50.0 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2AA;DI_RS2AA;Diodes;Si; 50.0V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2AA D ( IS=169u RS=4.81m BV=50.0 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2B;DI_RS2B;Diodes;Si; 100V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2B D ( IS=169u RS=4.81m BV=100 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2BA;DI_RS2BA;Diodes;Si; 100V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2BA D ( IS=169u RS=4.81m BV=100 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2D;DI_RS2D;Diodes;Si; 200V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2D D ( IS=169u RS=4.81m BV=200 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2DA;DI_RS2DA;Diodes;Si; 200V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2DA D ( IS=169u RS=4.81m BV=200 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2G;DI_RS2G;Diodes;Si; 400V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2G D ( IS=169u RS=4.81m BV=400 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2GA;DI_RS2GA;Diodes;Si; 400V 1.50A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS2GA D ( IS=169u RS=4.81m BV=400 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=216n ) ****************************************************************************************************** *SRC=RS2J;DI_RS2J;Diodes;Si; 600V 1.50A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS2J D ( IS=169u RS=4.81m BV=600 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=360n ) ****************************************************************************************************** *SRC=RS2JA;DI_RS2JA;Diodes;Si; 600V 1.50A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS2JA D ( IS=169u RS=4.81m BV=600 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=360n ) ****************************************************************************************************** *SRC=RS2K;DI_RS2K;Diodes;Si; 800V 1.50A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS2K D ( IS=169u RS=4.81m BV=800 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=720n ) ****************************************************************************************************** *SRC=RS2KA;DI_RS2KA;Diodes;Si; 800V 1.50A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS2KA D ( IS=169u RS=4.81m BV=800 IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=720n ) ****************************************************************************************************** *SRC=RS2M;DI_RS2M;Diodes;Si; 1.00kV 1.50A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS2M D ( IS=169u RS=4.81m BV=1.00k IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=720n ) ****************************************************************************************************** *SRC=RS2MA;DI_RS2MA;Diodes;Si; 1.00kV 1.50A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS2MA D ( IS=169u RS=4.81m BV=1.00k IBV=5.00u + CJO=55.5p M=0.333 N=6.02 TT=720n ) ****************************************************************************************************** *SRC=RS3A;DI_RS3A;Diodes;Si; 50.0V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3A D ( IS=200n RS=25.4m BV=50.0 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3AB;DI_RS3AB;Diodes;Si; 50.0V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3AB D ( IS=200n RS=25.4m BV=50.0 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3B;DI_RS3B;Diodes;Si; 100V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3B D ( IS=200n RS=25.4m BV=100 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3BB;DI_RS3BB;Diodes;Si; 100V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3BB D ( IS=200n RS=25.4m BV=100 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3D;DI_RS3D;Diodes;Si; 200V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3D D ( IS=200n RS=25.4m BV=200 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3DB;DI_RS3DB;Diodes;Si; 200V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3DB D ( IS=200n RS=25.4m BV=200 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3G;DI_RS3G;Diodes;Si; 400V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3G D ( IS=200n RS=25.4m BV=400 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3GB;DI_RS3GB;Diodes;Si; 400V 3.00A 150ns Diodes Inc. Fast Rectifier .MODEL DI_RS3GB D ( IS=200n RS=25.4m BV=400 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=216n ) ********************************************************************************************************** *SRC=RS3J;DI_RS3J;Diodes;Si; 600V 3.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS3J D ( IS=200n RS=25.4m BV=600 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=360n ) ********************************************************************************************************** *SRC=RS3JB;DI_RS3JB;Diodes;Si; 600V 3.00A 250ns Diodes Inc. Fast Rectifier .MODEL DI_RS3JB D ( IS=200n RS=25.4m BV=600 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=360n ) ********************************************************************************************************** *SRC=RS3K;DI_RS3K;Diodes;Si; 800V 3.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS3K D ( IS=200n RS=25.4m BV=800 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=720n ) *********************************************************************************************************** *SRC=RS3KB;DI_RS3KB;Diodes;Si; 800V 3.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS3KB D ( IS=200n RS=25.4m BV=800 IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=720n ) *********************************************************************************************************** *SRC=RS3M;DI_RS3M;Diodes;Si; 1.00kV 3.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS3M D ( IS=200n RS=25.4m BV=1.00k IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=720n ) *********************************************************************************************************** *SRC=RS3MB;DI_RS3MB;Diodes;Si; 1.00kV 3.00A 500ns Diodes Inc. Fast Rectifier .MODEL DI_RS3MB D ( IS=200n RS=25.4m BV=1.00k IBV=5.00u + CJO=92.5p M=0.333 N=2.23 TT=720n ) *********************************************************************************************************** *SRC=SF10AG;DI_SF10AG;Diodes;Si; 50.0V 1.00A 35.0ns Diodes Inc. .MODEL DI_SF10AG D ( IS=1.42n RS=42.0m BV=50.0 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=50.4n ) *SRC=SF10BG;DI_SF10BG;Diodes;Si; 100V 1.00A 35.0ns Diodes Inc. .MODEL DI_SF10BG D ( IS=1.42n RS=42.0m BV=100 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=50.4n ) *SRC=SF10CG;DI_SF10CG;Diodes;Si; 150V 1.00A 35.0ns Diodes Inc. .MODEL DI_SF10CG D ( IS=1.42n RS=42.0m BV=150 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=50.4n ) *SRC=SF10DG;DI_SF10DG;Diodes;Si; 200V 1.00A 35.0ns Diodes Inc. .MODEL DI_SF10DG D ( IS=1.42n RS=42.0m BV=200 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=50.4n ) *SRC=SF10FG;DI_SF10FG;Diodes;Si; 300V 1.00A 40.0ns Diodes Inc. - .MODEL DI_SF10FG D ( IS=50.9p RS=75.5m BV=300 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=57.6n ) *SRC=SF10GG;DI_SF10GG;Diodes;Si; 400V 1.00A 40.0ns Diodes Inc. - .MODEL DI_SF10GG D ( IS=50.9p RS=75.5m BV=400 IBV=10.0u + CJO=139p M=0.333 N=1.70 TT=57.6n ) *SRC=SF10HG;DI_SF10HG;Diodes;Si; 500V 1.00A 50.0ns Diodes Inc. - .MODEL DI_SF10HG D ( IS=13.5u RS=30.9m BV=500 IBV=10.0u + CJO=92.5p M=0.333 N=5.40 TT=72.0n ) *SRC=SF10JG;DI_SF10JG;Diodes;Si; 600V 1.00A 50.0ns Diodes Inc. - .MODEL DI_SF10JG D ( IS=13.5u RS=30.9m BV=600 IBV=10.0u + CJO=92.5p M=0.333 N=5.40 TT=72.0n ) *SRC=US1A;DI_US1A;Diodes;Si; 50.0V 1.00A 50.0ns Diodes Inc. - .MODEL DI_US1A D ( IS=667n RS=72.0m BV=50.0 IBV=5.00u + CJO=37.0p M=0.333 N=2.41 TT=72.0n ) *SRC=US1B;DI_US1B;Diodes;Si; 100V 1.00A 50.0ns Diodes Inc. - .MODEL DI_US1B D ( IS=667n RS=72.0m BV=100 IBV=5.00u + CJO=37.0p M=0.333 N=2.41 TT=72.0n ) *SRC=US1D;DI_US1D;Diodes;Si; 200V 1.00A 50.0ns Diodes Inc. - .MODEL DI_US1D D ( IS=667n RS=72.0m BV=200 IBV=5.00u + CJO=37.0p M=0.333 N=2.41 TT=72.0n ) *SRC=US1G;DI_US1G;Diodes;Si; 400V 1.00A 50.0ns Diodes Inc. .MODEL DI_US1G D ( IS=540p RS=0.116 BV=400 IBV=5.00u + CJO=37.0p M=0.333 N=1.70 TT=72.0n ) *SRC=US1J;DI_US1J;Diodes;Si; 600V 1.00A 75.0ns Diodes Inc. - .MODEL DI_US1J D ( IS=709n RS=82.3m BV=600 IBV=5.00u + CJO=18.5p M=0.333 N=3.23 TT=108n ) *SRC=US1K;DI_US1K;Diodes;Si; 800V 1.00A 75.0ns Diodes Inc. - .MODEL DI_US1K D ( IS=709n RS=82.3m BV=800 IBV=5.00u + CJO=18.5p M=0.333 N=3.23 TT=108n ) *SRC=US1M;DI_US1M;Diodes;Si; 1.00kV 1.00A 75.0ns Diodes Inc. - .MODEL DI_US1M D ( IS=709n RS=82.3m BV=1.00k IBV=5.00u + CJO=18.5p M=0.333 N=3.23 TT=108n ) *SRC=MBR10100CT;DI_MBR10100CT;Diodes;Si; 100V 10.0A 5.00ns Diodes Inc. .MODEL DI_MBR10100CT D ( IS=27.9n RS=4.20m BV=100 IBV=100u + CJO=555p M=0.333 N=1.28 TT=7.20n ) *SRC=MBR1030CT;DI_MBR1030CT;Diodes;Si; 30.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_MBR1030CT D ( IS=4.25u RS=13.0m BV=30.0 IBV=100u + CJO=318p M=0.333 N=1.15 TT=14.4n ) *SRC=MBR1040CT;DI_MBR1040CT;Diodes;Si; 40.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_MBR1040CT D ( IS=4.25u RS=13.0m BV=40.0 IBV=100u + CJO=318p M=0.333 N=1.15 TT=14.4n ) *SRC=MBR1045CT;DI_MBR1045CT;Diodes;Si; 45.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_MBR1045CT D ( IS=4.25u RS=13.0m BV=45.0 IBV=100u + CJO=318p M=0.333 N=1.15 TT=14.4n ) *SRC=MBR1050CT;DI_MBR1050CT;Diodes;Si; 50.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_MBR1050CT D ( IS=7.24u RS=14.5m BV=50.0 IBV=100u + CJO=318p M=0.333 N=1.29 TT=14.4n ) *SRC=MBR1060CT;DI_MBR1060CT;Diodes;Si; 60.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_MBR1060CT D ( IS=7.24u RS=14.5m BV=60.0 IBV=100u + CJO=318p M=0.333 N=1.29 TT=14.4n ) *SRC=SB1100;DI_SB1100;Diodes;Si; 100.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB1100 D ( IS=6.63u RS=62.3m BV=100.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) *SRC=SB120;DI_SB120;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB120 D ( IS=31.5u RS=49.2m BV=20.0 IBV=500u + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=SB130;DI_SB130;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB130 D ( IS=31.5u RS=49.2m BV=30.0 IBV=500u + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=SB140;DI_SB140;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB140 D ( IS=31.5u RS=49.2m BV=40.0 IBV=500u + CJO=239p M=0.333 N=1.70 TT=7.20n ) *SRC=SB150;DI_SB150;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB150 D ( IS=1.17u RS=42.0m BV=50.0 IBV=500u + CJO=172p M=0.333 N=1.28 TT=7.20n ) *SRC=SB160;DI_SB160;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB160 D ( IS=1.17u RS=42.0m BV=60.0 IBV=500u + CJO=172p M=0.333 N=1.28 TT=7.20n ) *SRC=SB170;DI_SB170;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB170 D ( IS=6.63u RS=62.3m BV=70.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) *SRC=SB180;DI_SB180;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB180 D ( IS=6.63u RS=62.3m BV=80.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) *SRC=SB190;DI_SB190;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB190 D ( IS=6.63u RS=62.3m BV=90.0 IBV=500u + CJO=199p M=0.333 N=1.70 TT=7.20n ) *SRC=SB340;DI_SB340;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SB340 D ( IS=85.9n RS=18.5m BV=40.0 IBV=70.0u + CJO=411p M=0.333 N=0.754 TT=7.20n ) *SRC=SBL1030;DI_SBL1030;Diodes;Si; 30.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1030 D ( IS=759u RS=4.20m BV=30.0 IBV=1.00m + CJO=2.12n M=0.333 N=1.70 TT=7.20n ) *SRC=SBL1030CT;DI_SBL1030CT;Diodes;Si; 30.0V 10.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1030CT D ( IS=759u RS=4.20m BV=30.0 IBV=500u + CJO=941p M=0.333 N=1.70 TT=7.20n ) *SRC=SBL1035;DI_SBL1035;Diodes;Si; 35.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1035 D ( IS=759u RS=4.20m BV=35.0 IBV=1.00m + CJO=2.12n M=0.333 N=1.70 TT=7.20n ) *SRC=SBL1035CT;DI_SBL1035CT;Diodes;Si; 35.0V 10.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1035CT D ( IS=759u RS=4.20m BV=35.0 IBV=500u + CJO=941p M=0.333 N=1.70 TT=7.20n ) *SRC=SBL1040;DI_SBL1040;Diodes;Si; 40.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1040 D ( IS=759u RS=4.20m BV=40.0 IBV=1.00m + CJO=2.12n M=0.333 N=1.70 TT=7.20n ) *SRC=SBL1040CT;DI_SBL1040CT;Diodes;Si; 40.0V 10.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1040CT D ( IS=759u RS=4.20m BV=40.0 IBV=500u + CJO=941p M=0.333 N=1.70 TT=7.20n ) *SRC=SBL1045;DI_SBL1045;Diodes;Si; 45.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1045 D ( IS=759u RS=4.20m BV=45.0 IBV=1.00m + CJO=2.12n M=0.333 N=1.70 TT=7.20n ) *SRC=SBL1045CT;DI_SBL1045CT;Diodes;Si; 45.0V 10.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1045CT D ( IS=759u RS=4.20m BV=45.0 IBV=500u + CJO=941p M=0.333 N=1.70 TT=7.20n ) *SRC=SBL1050;DI_SBL1050;Diodes;Si; 50.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1050 D ( IS=210u RS=4.22m BV=50.0 IBV=1.00m + CJO=2.12n M=0.333 N=2.03 TT=7.20n ) *SRC=SBL1050CT;DI_SBL1050CT;Diodes;Si; 50.0V 10.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1050CT D ( IS=210u RS=4.22m BV=50.0 IBV=500u + CJO=941p M=0.333 N=2.03 TT=7.20n ) *SRC=SBL1060;DI_SBL1060;Diodes;Si; 60.0V 10.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1060 D ( IS=210u RS=4.22m BV=60.0 IBV=1.00m + CJO=2.12n M=0.333 N=2.03 TT=7.20n ) *SRC=SBL1060CT;DI_SBL1060CT;Diodes;Si; 60.0V 10.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1060CT D ( IS=210u RS=4.22m BV=60.0 IBV=500u + CJO=941p M=0.333 N=2.03 TT=7.20n ) *SRC=SBL1630;DI_SBL1630;Diodes;Si; 30.0V 16.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1630 D ( IS=903u RS=3.60m BV=30.0 IBV=1.00m + CJO=1.72n M=0.333 N=1.67 TT=7.20n ) *SRC=SBL1630PT;DI_SBL1630PT;Diodes;Si; 30.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1630PT D ( IS=575u RS=3.47m BV=30.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) *SRC=SBL1635;DI_SBL1635;Diodes;Si; 35.0V 16.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1635 D ( IS=903u RS=3.60m BV=35.0 IBV=1.00m + CJO=1.72n M=0.333 N=1.67 TT=7.20n ) *SRC=SBL1635PT;DI_SBL1635PT;Diodes;Si; 35.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1635PT D ( IS=575u RS=3.47m BV=35.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) *SRC=SBL1640;DI_SBL1640;Diodes;Si; 40.0V 16.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1640 D ( IS=903u RS=3.60m BV=40.0 IBV=1.00m + CJO=1.72n M=0.333 N=1.67 TT=7.20n ) *SRC=SBL1640PT;DI_SBL1640PT;Diodes;Si; 40.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1640PT D ( IS=575u RS=3.47m BV=40.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) *SRC=SBL1645;DI_SBL1645;Diodes;Si; 45.0V 16.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1645 D ( IS=903u RS=3.60m BV=45.0 IBV=1.00m + CJO=1.72n M=0.333 N=1.67 TT=7.20n ) *SRC=SBL1645PT;DI_SBL1645PT;Diodes;Si; 45.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1645PT D ( IS=575u RS=3.47m BV=45.0 IBV=500u + CJO=1.86n M=0.333 N=1.68 TT=7.20n ) *SRC=SBL1650;DI_SBL1650;Diodes;Si; 50.0V 16.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1650 D ( IS=1.38m RS=3.22m BV=50.0 IBV=1.00m + CJO=1.72n M=0.333 N=2.27 TT=7.20n ) *SRC=SBL1650PT;DI_SBL1650PT;Diodes;Si; 50.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1650PT D ( IS=89.9u RS=3.60m BV=50.0 IBV=500u + CJO=1.86n M=0.333 N=1.67 TT=7.20n ) *SRC=SBL1660;DI_SBL1660;Diodes;Si; 60.0V 16.0A 5.00ns Diodes Inc. Schottky .MODEL DI_SBL1660 D ( IS=1.38m RS=3.22m BV=60.0 IBV=1.00m + CJO=1.72n M=0.333 N=2.27 TT=7.20n ) *SRC=SBL1660PT;DI_SBL1660PT;Diodes;Si; 60.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL1660PT D ( IS=89.9u RS=3.60m BV=60.0 IBV=500u + CJO=1.86n M=0.333 N=1.67 TT=7.20n ) *SRC=SBL2030CT;DI_SBL2030CT;Diodes;Si; 30.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2030CT D ( IS=4.83m RS=2.37m BV=30.0 IBV=1.00m + CJO=1.34n M=0.333 N=2.28 TT=14.4n ) *SRC=SBL2030PT;DI_SBL2030PT;Diodes;Si; 30.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2030PT D ( IS=597u RS=2.88m BV=30.0 IBV=1.00m + CJO=2.52n M=0.333 N=1.59 TT=14.4n ) *SRC=SBL2035CT;DI_SBL2035CT;Diodes;Si; 35.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2035CT D ( IS=4.83m RS=2.37m BV=35.0 IBV=1.00m + CJO=1.34n M=0.333 N=2.28 TT=14.4n ) *SRC=SBL2035PT;DI_SBL2035PT;Diodes;Si; 35.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2035PT D ( IS=597u RS=2.88m BV=35.0 IBV=1.00m + CJO=2.52n M=0.333 N=1.59 TT=14.4n ) *SRC=SBL2040CT;DI_SBL2040CT;Diodes;Si; 40.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2040CT D ( IS=4.83m RS=2.37m BV=40.0 IBV=1.00m + CJO=1.34n M=0.333 N=2.28 TT=14.4n ) *SRC=SBL2040PT;DI_SBL2040PT;Diodes;Si; 40.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2040PT D ( IS=597u RS=2.88m BV=40.0 IBV=1.00m + CJO=2.52n M=0.333 N=1.59 TT=14.4n ) *SRC=SBL2045CT;DI_SBL2045CT;Diodes;Si; 45.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2045CT D ( IS=4.83m RS=2.37m BV=45.0 IBV=1.00m + CJO=1.34n M=0.333 N=2.28 TT=14.4n ) *SRC=SBL2045PT;DI_SBL2045PT;Diodes;Si; 45.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2045PT D ( IS=597u RS=2.88m BV=45.0 IBV=1.00m + CJO=2.52n M=0.333 N=1.59 TT=14.4n ) *SRC=SBL2050CT;DI_SBL2050CT;Diodes;Si; 50.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2050CT D ( IS=3.50m RS=2.11m BV=50.0 IBV=1.00m + CJO=1.34n M=0.333 N=2.95 TT=14.4n ) *SRC=SBL2050PT;DI_SBL2050PT;Diodes;Si; 50.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2050PT D ( IS=587u RS=2.11m BV=50.0 IBV=1.00m + CJO=2.52n M=0.333 N=2.12 TT=14.4n ) *SRC=SBL2060CT;DI_SBL2060CT;Diodes;Si; 60.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2060CT D ( IS=3.50m RS=2.11m BV=60.0 IBV=1.00m + CJO=1.34n M=0.333 N=2.95 TT=14.4n ) *SRC=SBL2060PT;DI_SBL2060PT;Diodes;Si; 60.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL2060PT D ( IS=587u RS=2.11m BV=60.0 IBV=1.00m + CJO=2.52n M=0.333 N=2.12 TT=14.4n ) *SRC=SBL3030CT;DI_SBL3030CT;Diodes;Si; 30.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL3030CT D ( IS=200u RS=1.92m BV=30.0 IBV=1.00m + CJO=809p M=0.333 N=1.42 TT=14.4n ) *SRC=SBL3030PT;DI_SBL3030PT;Diodes;Si; 30.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL3030PT D ( IS=441u RS=1.92m BV=30.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.51 TT=14.4n ) *SRC=SBL3035PT;DI_SBL3035PT;Diodes;Si; 35.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL3035PT D ( IS=441u RS=1.92m BV=35.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.51 TT=14.4n ) *SRC=SBL3040CT;DI_SBL3040CT;Diodes;Si; 40.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL3040CT D ( IS=200u RS=1.92m BV=40.0 IBV=1.00m + CJO=809p M=0.333 N=1.42 TT=14.4n ) *SRC=SBL3040PT;DI_SBL3040PT;Diodes;Si; 40.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL3040PT D ( IS=441u RS=1.92m BV=40.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.51 TT=14.4n ) *SRC=SBL3045CT;DI_SBL3045CT;Diodes;Si; 45.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL3045CT D ( IS=200u RS=1.92m BV=45.0 IBV=1.00m + CJO=809p M=0.333 N=1.42 TT=14.4n ) *SRC=SBL3045PT;DI_SBL3045PT;Diodes;Si; 45.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL3045PT D ( IS=441u RS=1.92m BV=45.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.51 TT=14.4n ) *SRC=SBL3050CT;DI_SBL3050CT;Diodes;Si; 50.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL3050CT D ( IS=264u RS=1.99m BV=50.0 IBV=1.00m + CJO=809p M=0.333 N=1.67 TT=14.4n ) *SRC=SBL3050PT;DI_SBL3050PT;Diodes;Si; 50.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL3050PT D ( IS=346u RS=1.61m BV=50.0 IBV=1.00m + CJO=1.33n M=0.333 N=2.02 TT=14.4n ) *SRC=SBL3060CT;DI_SBL3060CT;Diodes;Si; 60.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL3060CT D ( IS=264u RS=1.99m BV=60.0 IBV=1.00m + CJO=809p M=0.333 N=1.67 TT=14.4n ) *SRC=SBL3060PT;DI_SBL3060PT;Diodes;Si; 60.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL3060PT D ( IS=346u RS=1.61m BV=60.0 IBV=1.00m + CJO=1.33n M=0.333 N=2.02 TT=14.4n) *SRC=SBL4030PT;DI_SBL4030PT;Diodes;Si; 30.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4030PT D ( IS=10.9u RS=1.53m BV=30.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.08 TT=14.4n ) *SRC=SBL4035PT;DI_SBL4035PT;Diodes;Si; 35.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4035PT D ( IS=10.9u RS=1.53m BV=35.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.08 TT=14.4n ) *SRC=SBL4040PT;DI_SBL4040PT;Diodes;Si; 40.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4040PT D ( IS=10.9u RS=1.53m BV=40.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.08 TT=14.4n ) *SRC=SBL4045PT;DI_SBL4045PT;Diodes;Si; 45.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4045PT D ( IS=10.9u RS=1.53m BV=45.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.08 TT=14.4n ) *SRC=SBL4050PT;DI_SBL4050PT;Diodes;Si; 50.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4050PT D ( IS=53.0u RS=1.26m BV=50.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.70 TT=14.4n ) *SRC=SBL4060PT;DI_SBL4060PT;Diodes;Si; 60.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL4060PT D ( IS=53.0u RS=1.26m BV=60.0 IBV=1.00m + CJO=1.33n M=0.333 N=1.70 TT=14.4n ) *SRC=SBL530;DI_SBL530;Diodes;Si; 30.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL530 D ( IS=926u RS=9.47m BV=30.0 IBV=500u + CJO=968p M=0.333 N=1.69 TT=14.4n ) *SRC=SBL535;DI_SBL535;Diodes;Si; 35.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL535 D ( IS=926u RS=9.47m BV=35.0 IBV=500u + CJO=968p M=0.333 N=1.69 TT=14.4n ) *SRC=SBL540;DI_SBL540;Diodes;Si; 40.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL540 D ( IS=926u RS=9.47m BV=40.0 IBV=500u + CJO=968p M=0.333 N=1.69 TT=14.4n ) *SRC=SBL545;DI_SBL545;Diodes;Si; 45.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL545 D ( IS=926u RS=9.47m BV=45.0 IBV=500u + CJO=968p M=0.333 N=1.69 TT=14.4n ) *SRC=SBL550;DI_SBL550;Diodes;Si; 50.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL550 D ( IS=14.0u RS=8.33m BV=50.0 IBV=500u + CJO=968p M=0.333 N=1.70 TT=14.4n ) *SRC=SBL560;DI_SBL560;Diodes;Si; 60.0V 5.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL560 D ( IS=14.0u RS=8.33m BV=60.0 IBV=500u + CJO=968p M=0.333 N=1.70 TT=14.4n ) *SRC=SBL6030PT;DI_SBL6030PT;Diodes;Si; 30.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL6030PT D ( IS=1.93m RS=917u BV=30.0 IBV=20.0m + CJO=3.25n M=0.333 N=1.68 TT=14.4n ) *SRC=SBL6040PT;DI_SBL6040PT;Diodes;Si; 40.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL6040PT D ( IS=1.93m RS=917u BV=40.0 IBV=20.0m + CJO=3.25n M=0.333 N=1.68 TT=14.4n ) *SRC=SBL6050PT;DI_SBL6050PT;Diodes;Si; 50.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL6050PT D ( IS=353u RS=909u BV=50.0 IBV=20.0m + CJO=3.25n M=0.333 N=1.76 TT=14.4n ) *SRC=SBL6060PT;DI_SBL6060PT;Diodes;Si; 60.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual .MODEL DI_SBL6060PT D ( IS=353u RS=909u BV=60.0 IBV=20.0m + CJO=3.25n M=0.333 N=1.76 TT=14.4n ) *SRC=SBL830;DI_SBL830;Diodes;Si; 30.0V 8.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL830 D ( IS=396u RS=4.50m BV=30.0 IBV=500u + CJO=1.72n M=0.333 N=1.71 TT=14.4n ) *SRC=SBL835;DI_SBL835;Diodes;Si; 35.0V 8.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL835 D ( IS=396u RS=4.50m BV=35.0 IBV=500u + CJO=1.72n M=0.333 N=1.71 TT=14.4n ) *SRC=SBL840;DI_SBL840;Diodes;Si; 40.0V 8.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL840 D ( IS=396u RS=4.50m BV=40.0 IBV=500u + CJO=1.72n M=0.333 N=1.71 TT=14.4n ) *SRC=SBL845;DI_SBL845;Diodes;Si; 45.0V 8.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL845 D ( IS=396u RS=4.50m BV=45.0 IBV=500u + CJO=1.72n M=0.333 N=1.71 TT=14.4n ) *SRC=SBL850;DI_SBL850;Diodes;Si; 50.0V 8.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL850 D ( IS=30.8u RS=5.66m BV=50.0 IBV=500u + CJO=1.72n M=0.333 N=1.69 TT=14.4n ) *SRC=SBL860;DI_SBL860;Diodes;Si; 60.0V 8.00A 10.0ns Diodes Inc. Schottky .MODEL DI_SBL860 D ( IS=30.8u RS=5.66m BV=60.0 IBV=500u + CJO=1.72n M=0.333 N=1.69 TT=14.4n ) *SRC=SD830;DI_SD830;Diodes;Si; 30.0V 8.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SD830 D ( IS=248u RS=5.25m BV=30.0 IBV=1.00m + CJO=1.06n M=0.333 N=1.70 TT=7.20n ) *SRC=SD840;DI_SD840;Diodes;Si; 40.0V 8.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SD840 D ( IS=248u RS=5.25m BV=40.0 IBV=1.00m + CJO=1.06n M=0.333 N=1.70 TT=7.20n ) *SRC=SD845;DI_SD845;Diodes;Si; 45.0V 8.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SD845 D ( IS=248u RS=5.25m BV=45.0 IBV=1.00m + CJO=1.06n M=0.333 N=1.70 TT=7.20n ) *SRC=SD860;DI_SD860;Diodes;Si; 60.0V 8.00A 5.00ns Diodes Inc. Schottky .MODEL DI_SD860 D ( IS=248u RS=5.25m BV=60.0 IBV=1.00m + CJO=1.06n M=0.333 N=1.70 TT=7.20n ) *SRC=BC807-16;DI_BC807-16;BJTs PNP; Si; 45.0V 0.500A 220MHz Diodes Inc. BJTs .MODEL DI_BC807-16 PNP (IS=50.7f NF=1.00 BF=342 VAF=121 + IKF=0.273 ISE=24.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=631p TR=111n EG=1.12 ) *SRC=BC807-25;DI_BC807-25;BJTs PNP; Si; 45.0V 0.500A 220MHz Diodes Inc. BJTs .MODEL DI_BC807-25 PNP (IS=50.7f NF=1.00 BF=547 VAF=121 + IKF=0.273 ISE=15.1p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=631p TR=109n EG=1.12 ) *SRC=BC807-40;DI_BC807-40;BJTs PNP; Si; 45.0V 0.500A 220MHz Diodes Inc. BJTs .MODEL DI_BC807-40 PNP (IS=50.7f NF=1.00 BF=821 VAF=121 + IKF=0.273 ISE=10.1p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=631p TR=108n EG=1.12 ) *SRC=BC817-16;DI_BC817-16;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes Inc. BJTs .MODEL DI_BC817-16 NPN (IS=4.04n NF=1.00 BF=342 VAF=121 + IKF=0.273 ISE=6.86n NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=651p TR=111n EG=1.12 ) *SRC=BC817-25;DI_BC817-25;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes Inc. BJTs .MODEL DI_BC817-25 NPN (IS=4.04n NF=1.00 BF=548 VAF=121 + IKF=0.273 ISE=4.29n NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=651p TR=109n EG=1.12 ) *SRC=BC817-40;DI_BC817-40;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes Inc. BJTs .MODEL DI_BC817-40 NPN (IS=4.04n NF=1.00 BF=822 VAF=121 + IKF=0.273 ISE=2.86n NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300 + TF=651p TR=108n EG=1.12 ) *SRC=BC846A;DI_BC846A;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC846A NPN (IS=10.2f NF=1.00 BF=305 VAF=145 + IKF=53.6m ISE=5.86p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=416p TR=50.3n EG=1.12 ) *SRC=BC846AW;DI_BC846AW;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC846AW NPN (IS=10.2f NF=1.00 BF=305 VAF=145 + IKF=53.6m ISE=5.86p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=416p TR=50.3n EG=1.12 ) *SRC=BC846B;DI_BC846B;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC846B NPN (IS=10.2f NF=1.00 BF=650 VAF=145 + IKF=39.5m ISE=2.93p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.105 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=385p TR=49.0n EG=1.12 ) *SRC=BC846BW;DI_BC846BW;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC846BW NPN (IS=10.2f NF=1.00 BF=650 VAF=145 + IKF=39.5m ISE=2.93p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.105 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=385p TR=49.0n EG=1.12 ) *SRC=BC846C;DI_BC846C;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC846C NPN (IS=10.2f NF=1.00 BF=1.09k VAF=145 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC846CW;DI_BC846CW;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC846CW NPN (IS=10.2f NF=1.00 BF=1.09k VAF=145 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC847A;DI_BC847A;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847A NPN (IS=10.2f NF=1.00 BF=301 VAF=121 + IKF=60.7m ISE=5.82p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=50.3n EG=1.12 ) *SRC=BC847AT;DI_BC847AT;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847AT NPN (IS=9.98f NF=1.00 BF=301 VAF=121 + IKF=60.7m ISE=5.75p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300 + TF=423p TR=50.3n EG=1.12 ) *SRC=BC847AW;DI_BC847AW;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847AW NPN (IS=10.2f NF=1.00 BF=301 VAF=121 + IKF=60.7m ISE=5.82p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=50.3n EG=1.12 ) *SRC=BC847B;DI_BC847B;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transistor .MODEL DI_BC847B NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121 + IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=520p TR=78.9n EG=1.12 ) *SRC=BC847BS;DI_BC847BS;BJTs NPN; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC847BS NPN (IS=9.98f NF=1.00 BF=616 VAF=121 + IKF=60.7m ISE=2.81p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=4.33p VJC=0.300 MJC=0.300 + TF=585p TR=49.1n EG=1.12 ) *SRC=BC847BT;DI_BC847BT;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847BT NPN (IS=9.98f NF=1.00 BF=616 VAF=121 + IKF=60.7m ISE=2.81p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300 + TF=423p TR=49.1n EG=1.12 ) *SRC=BC847BV;DI_BC847BV;BJTs NPN; Si; 45.0V 0.100A 200MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_BC847BV NPN (IS=10.2f NF=1.00 BF=616 VAF=121 + IKF=42.5m ISE=2.38p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.105 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=35.8p VJE=1.10 MJE=0.500 CJC=11.6p VJC=0.300 + MJC=0.300 TF=665p TR=120n EG=1.12 ) *SRC=BC847BW;DI_BC847BW;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847BW NPN (IS=10.2f NF=1.00 BF=616 VAF=121 + IKF=60.7m ISE=2.84p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=49.1n EG=1.12 ) *SRC=BC847C;DI_BC847C;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847C NPN (IS=10.3f NF=1.00 BF=1.09k VAF=121 + IKF=60.7m ISE=1.61p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.965 RB=3.86 RC=0.386 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC847CT;DI_BC847CT;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847CT NPN (IS=9.98f NF=1.00 BF=1.09k VAF=121 + IKF=60.7m ISE=1.58p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300 + TF=423p TR=48.6n EG=1.12 ) *SRC=BC847CW;DI_BC847CW;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC847CW NPN (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) ***************************************************************************************************************************************** *SRC=BC847PN;DI_BC847PN_NPN;BJTs NPN; Si; 45.0V 0.100A 250MHz Diodes Inc BJTs - Complementary .MODEL DI_BC847PN_NPN NPN (IS=9.98f NF=1.00 BF=616 VAF=121 + IKF=60.7m ISE=2.81p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=4.33p VJC=0.300 + MJC=0.300 TF=585p TR=49.1n EG=1.12 ) *SRC=BC847PN;DI_BC847PN_PNP;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs - Complementary .MODEL DI_BC847PN_PNP PNP (IS=10.2f NF=1.00 BF=650 VAF=121 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=586p TR=95.9n EG=1.12 ) ***************************************************************************************************************************************** *SRC=BC848A;DI_BC848A;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848A NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC848AW;DI_BC848AW;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848AW NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC848B;DI_BC848B;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848B NPN (IS=10.2f NF=1.00 BF=616 VAF=98.6 + IKF=60.7m ISE=2.84p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=49.1n EG=1.12 ) *SRC=BC848BW;DI_BC848BW;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848BW NPN (IS=10.2f NF=1.00 BF=616 VAF=98.6 + IKF=60.7m ISE=2.84p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=49.1n EG=1.12 ) *SRC=BC848C;DI_BC848C;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848C NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC848CW;DI_BC848CW;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc BJTs .MODEL DI_BC848CW NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300 + TF=427p TR=48.6n EG=1.12 ) *SRC=BC856A;DI_BC856A;BJTs PNP; Si; 65.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC856A PNP (IS=10.2f NF=1.00 BF=342 VAF=145 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) *SRC=BC856AW;DI_BC856AW;BJTs PNP; Si; 65.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC856AW PNP (IS=10.2f NF=1.00 BF=342 VAF=145 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) *SRC=BC856B;DI_BC856B;BJTs PNP; Si; 80.0V 0.200A 257MHz Diodes Inc. Transistor .MODEL DI_BC856B PNP (IS=3.90f NF=1.00 BF=408 VAF=161 + IKF=91.1m ISE=3.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.225 RE=0.782 RB=3.13 RC=0.313 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=548p TR=94.5n EG=1.12 ) *SRC=BC856BW;DI_BC856BW;BJTs PNP; Si; 80.0V 0.200A 257MHz Diodes Inc. Transistor .MODEL DI_BC856BW PNP (IS=3.90f NF=1.00 BF=408 VAF=161 + IKF=91.1m ISE=3.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.225 RE=0.782 RB=3.13 RC=0.313 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=548p TR=94.5n EG=1.12 ) *SRC=BC857A;DI_BC857A;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857A PNP (IS=10.2f NF=1.00 BF=342 VAF=121 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) *SRC=BC857AT;DI_BC857AT;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857AT PNP (IS=10.2f NF=1.00 BF=342 VAF=121 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300 + MJC=0.300 TF=488p TR=97.8n EG=1.12 ) *SRC=BC857AW;DI_BC857AW;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857AW PNP (IS=10.2f NF=1.00 BF=342 VAF=121 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) *SRC=BC857B;DI_BC857B;BJTs PNP; Si; 45.0V 0.100A 200MHz Diodes, Inc. transistor .MODEL DI_BC857B PNP (IS=5.51f NF=1.00 BF=424 VAF=121 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=700p TR=121n EG=1.12 ) *SRC=BC857BS;DI_BC857BS;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_BC857BS PNP (IS=10.2f NF=1.00 BF=650 VAF=121 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 MJC=0.300 + TF=586p TR=95.9n EG=1.12 ) *SRC=BC857BT;DI_BC857BT;BJTs PNP; Si; 45.0V 0.100A 200MHz Diodes, Inc. transistor .MODEL DI_BC857B PNP (IS=5.51f NF=1.00 BF=424 VAF=121 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=700p TR=121n EG=1.12 ) *SRC=BC857BV;DI_BC857BV;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857BV PNP (IS=10.2f NF=1.00 BF=650 VAF=121 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300 + MJC=0.300 TF=499p TR=95.9n EG=1.12 )=499p TR=95.9n EG=1.12 ) *SRC=BC857BW;DI_BC857BW;BJTs PNP; Si; 45.0V 0.100A 200MHz Diodes, Inc. transistor .MODEL DI_BC857BW PNP (IS=5.51f NF=1.00 BF=424 VAF=121 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=700p TR=121n EG=1.12 ) *SRC=BC857C;DI_BC857C;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857C PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=587p TR=95.0n EG=1.12 ) *SRC=BC857CT;DI_BC857CT;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857CT PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=30.8p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300 + MJC=0.300 TF=526p TR=95.0n EG=1.12 ) *SRC=BC857CW;DI_BC857CW;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC857CW PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=587p TR=95.0n EG=1.12 ) *SRC=BC858A;DIBC858A;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DIBC858A PNP (IS=10.2f NF=1.00 BF=342 VAF=98.6 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) *SRC=BC858AW;DI_BC858AW;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC858AW PNP (IS=10.2f NF=1.00 BF=342 VAF=98.6 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=581p TR=97.8n EG=1.12 ) *SRC=BC858B;DI_BC858B;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC858B PNP (IS=10.2f NF=1.00 BF=650 VAF=98.6 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=586p TR=95.9n EG=1.12 ) *SRC=BC858BW;DI_BC858BW;BJTs PNP; Si; 30.0V 0.100A 200MHz Diodes, Inc. transistor .MODEL DI_BC858BW PNP (IS=5.51f NF=1.00 BF=424 VAF=98.6 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 + MJC=0.300 TF=700p TR=121n EG=1.12 ) *SRC=BC858C;DI_BC858C;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC858C PNP (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=587p TR=95.0n EG=1.12 ) *SRC=BC858CW;DI_BC858CW;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs .MODEL DI_BC858CW PNP (IS=10.2f NF=1.00 BF=1.09k VAF=98.6 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 + MJC=0.300 TF=587p TR=95.0n EG=1.12 ) *SRC=DMMT3904W;DI_DMMT3904W;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. Matched Transistor .MODEL DI_DMMT3904W NPN (IS=20.3f NF=1.00 BF=274 VAF=114 + IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.657 RB=2.63 RC=0.263 + XTB=1.5 CJE=8.29p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 + MJC=0.300 TF=426p TR=71.3n EG=1.12 ) ***************************************************************************************************************************************** *SRC=DMMT3906;DI_DMMT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. Matched BJTs - Single device of dual .MODEL DI_DMMT3906 PNP (IS=20.3f NF=1.00 BF=437 VAF=114 + IKF=44.6m ISE=6.81p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=23.5p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 + MJC=0.300 TF=504p TR=94.3n EG=1.12 ) ***************************************************************************************************************************************** *SRC=DMMT3906W;DI_DMMT3906W;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes, Inc. PNP .MODEL DI_DMMT3906W PNP (IS=20.3f NF=1.00 BF=274 VAF=114 + IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=90.0m RE=1.01 RB=4.03 RC=0.403 + XTB=1.5 CJE=12.1p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 + MJC=0.300 TF=531p TR=85.6n EG=1.12 ) *SRC=DMMT5551;DI_DMMT5551;BJTs NPN; Si; 160V 0.200A 150MHz Diodes Inc. Matched BJTs - Single device of dual .MODEL DI_DMMT5551 NPN (IS=15.4f NF=1.00 BF=342 VAF=228 + IKF=42.5m ISE=5.27p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.105 RE=0.257 RB=1.03 RC=0.103 + XTB=1.5 CJE=52.0p VJE=1.10 MJE=0.500 CJC=16.8p VJC=0.300 + MJC=0.300 TF=873p TR=163n EG=1.12 ) *SRC=IMT4;DI_IMT4;BJTs PNP; Si; 120V 50.0mA 200MHz Diodes Inc. Transistor .MODEL DI_IMT4 PNP (IS=12.8f NF=1.00 BF=513 VAF=197 + IKF=30.4m ISE=2.70p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=75.0m RE=1.43 RB=5.72 RC=0.572 + XTB=1.5 CJE=19.1p VJE=1.10 MJE=0.500 CJC=6.15p VJC=0.300 + MJC=0.300 TF=710p TR=121n EG=1.12 ) *SRC=IMX8;DI_IMX8;BJTs NPN; Si; 120V 50.0mA 300MHz Diodes Inc. Transistor .MODEL DI_IMX8 NPN (IS=14.6f NF=1.00 BF=581 VAF=197 + IKF=30.4m ISE=2.54p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=75.0m RE=0.830 RB=3.32 RC=0.332 + XTB=1.5 CJE=12.5p VJE=1.10 MJE=0.500 CJC=4.02p VJC=0.300 + MJC=0.300 TF=475p TR=80.1n EG=1.12 ) *SRC=MMBT123S;DI_MMBT123S;BJTs NPN; Si; 18.0V 1.00A 100MHz Diodes Inc. BJTs .MODEL DI_MMBT123S NPN (IS=102f NF=1.00 BF=1.09k VAF=76.4 + IKF=0.425 ISE=13.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=1.05 RE=0.181 RB=0.726 RC=72.6m + XTB=1.5 CJE=71.7p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 MJC=0.300 + TF=1.55n TR=238n EG=1.12 ) *SRC=MMBT2222A;DI_MMBT2222A;BJTs NPN; Si; 40.0V 0.600A 200MHz Diodes Inc. Transistor .MODEL DI_MMBT2222A NPN (IS=25.4f NF=1.00 BF=274 VAF=114 + IKF=0.121 ISE=14.3p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.219 RB=0.877 RC=87.7m + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=622p TR=124n EG=1.12 ) *SRC=MMBT2222AT;DI_MMBT2222AT;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs .MODEL DI_MMBT2222AT NPN (IS=60.4f NF=1.00 BF=301 VAF=114 + IKF=66.8m ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.165 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 MJC=0.300 + TF=491p TR=82.1n EG=1.12 ) *SRC=MMBT2907A;DI_MMBT2907A;BJTs PNP; Si; 60.0V 0.600A 200MHz Diodes Inc. Transistor .MODEL DI_MMBT2907A PNP (IS=60.7f NF=1.00 BF=312 VAF=139 + IKF=0.219 ISE=26.0p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m + XTB=1.5 CJE=50.4p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 + MJC=0.300 TF=758p TR=123n EG=1.12 ) *SRC=MMBT2907AT;DI_MMBT2907AT;BJTs PNP; Si; 60.0V 0.500A 300MHz Diodes Inc. BJTs .MODEL DI_MMBT2907AT PNP (IS=50.0f NF=1.00 BF=410 VAF=139 + IKF=0.182 ISE=16.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.450 RE=0.343 RB=1.37 RC=0.137 + XTB=1.5 CJE=34.9p VJE=1.10 MJE=0.500 CJC=14.7p VJC=0.300 + MJC=0.300 TF=484p TR=29.9n EG=1.12 ) *SRC=MMBT3904;DI_MMBT3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. NPN Transistor .MODEL DI_MMBT3904 NPN (IS=48.3f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=13.1p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=2.63 RB=10.5 RC=1.05 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=8.70p VJC=0.300 + MJC=0.300 TF=440p TR=74.7n EG=1.12 ) *SRC=MMBT3904T;DI_MMBT3904T;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs .MODEL DI_MMBT3904T NPN (IS=20.2f NF=1.00 BF=410 VAF=114 + IKF=30.4m ISE=4.25p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=8.92p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300 + TF=383p TR=69.9n EG=1.12 ) *SRC=MMBT3906;DI_MMBT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. Transistor .MODEL DI_MMBT3906 PNP (IS=20.3f NF=1.00 BF=192 VAF=114 + IKF=60.7m ISE=12.9p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=7.60p VJE=1.10 MJE=0.500 CJC=6.52p VJC=0.300 + MJC=0.300 TF=589p TR=98.4n EG=1.12 ) *SRC=MMBT3906T;DI_MMBT3906T;BJTs PNP; Si; 40.0V 0.200A 257MHz Didoes Inc. BJTs .MODEL DI_MMBT3906T NPN (IS=7.21e-016 NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=1.13p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=1.21 RB=4.83 RC=0.483 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=6.63p VJC=0.300 MJC=0.300 + TF=571p TR=84.1n EG=1.12 ) *SRC=MMBT4124;DI_MMBT4124;BJTs NPN; Si; 30.0V 0.200A 347MHz Diodes Inc. NPN Transistor .MODEL DI_MMBT4124 NPN (IS=20.7f NF=1.00 BF=492 VAF=98.6 + IKF=72.9m ISE=5.54p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=2.63 RB=10.5 RC=1.05 + XTB=1.5 CJE=9.65p VJE=1.10 MJE=0.500 CJC=9.47p VJC=0.300 + MJC=0.300 TF=415p TR=69.8n EG=1.12 ) *SRC=MMBT4126;DI_MMBT4126;BJTs PNP; Si; 25.0V 0.200A 257MHz Diodes Inc. Transistor .MODEL DI_MMBT4126 PNP (IS=20.3f NF=1.00 BF=598 VAF=90.0 + IKF=72.9m ISE=4.52p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.180 RE=0.257 RB=1.03 RC=0.103 + XTB=1.5 CJE=13.8p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 + MJC=0.300 TF=569p TR=93.4n EG=1.12 ) *SRC=MMBT4126;DI_MMBT4126;BJTs PNP; Si; 25.0V 0.200A 257MHz Diodes Inc. Transistor .MODEL DI_MMBT4126 PNP (IS=20.3f NF=1.00 BF=598 VAF=90.0 + IKF=72.9m ISE=4.52p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.180 RE=0.257 RB=1.03 RC=0.103 + XTB=1.5 CJE=13.8p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 + MJC=0.300 TF=569p TR=93.4n EG=1.12 ) *SRC=MMBT4401;DI_MMBT4401;BJTs NPN; Si; 40.0V 0.600A 200MHz Diodes, Inc. transistor .MODEL DI_MMBT4401 NPN (IS=60.9f NF=1.00 BF=410 VAF=114 + IKF=0.364 ISE=25.5p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.900 RE=0.713 RB=2.85 RC=0.285 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 + MJC=0.300 TF=717p TR=121n EG=1.12 ) *SRC=MMBT4401T;DI_MMBT4401T;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_MMBT4401T NPN (IS=1.27p NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 MJC=0.300 + TF=533p TR=84.1n EG=1.12 ) *SRC=MMBT4403;DI_MMBT4403;BJTs PNP; Si; 40.0V 0.600A 300MHz Diodes Inc. Transistor .MODEL DI_MMBT4403 PNP (IS=26.9f NF=1.00 BF=274 VAF=114 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.263 RB=1.05 RC=0.105 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=24.6p VJC=0.300 + MJC=0.300 TF=500p TR=82.4n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMBT4403T;DI_MMBT4403T;BJTs PNP; Si; 40.0V 0.600A 200MHz Diodes Inc. BJTs .MODEL DI_MMBT4403T PNP (IS=60.4f NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=667p TR=84.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMBT5401;DI_MMBT5401;BJTs PNP; Si; 150V 0.200A 300MHz Diodes Inc. Transistor .MODEL DI_MMBT5401 PNP (IS=20.3f NF=1.00 BF=328 VAF=220 + IKF=72.9m ISE=8.24p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.257 RB=1.03 RC=0.103 + XTB=1.5 CJE=54.3p VJE=1.10 MJE=0.500 CJC=17.5p VJC=0.300 + MJC=0.300 TF=315p TR=81.7n EG=1.12 ) *SRC=MMBT5551;DI_MMBT5551;BJTs NPN; Si; 160V 0.200A 130MHz Diodes Inc. Transistor .MODEL DI_MMBT5551 NPN (IS=20.2f NF=1.00 BF=219 VAF=228 + IKF=36.4m ISE=8.72p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.257 RB=1.03 RC=0.103 + XTB=1.5 CJE=27.9p VJE=1.10 MJE=0.500 CJC=8.99p VJC=0.300 MJC=0.300 + TF=1.13n TR=193n EG=1.12 ) *SRC=MMBTA05;DI_MMBTA05;BJTs NPN; Si; 60.0V 0.500A 219MHz Diodes Inc. BJTs .MODEL DI_MMBTA05 NPN (IS=51.3f NF=1.00 BF=547 VAF=139 + IKF=0.146 ISE=11.1p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.360 RE=0.223 RB=0.892 RC=89.2m + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 MJC=0.300 + TF=631p TR=110n EG=1.12 ) *SRC=MMBTA06;DI_MMBTA06;BJTs NPN; Si; 80.0V 0.500A 219MHz Diodes Inc. Transistor .MODEL DI_MMBTA06 NPN (IS=50.8f NF=1.00 BF=479 VAF=161 + IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 + MJC=0.300 TF=576p TR=110n EG=1.12 ) *SRC=MMBTA42;DI_MMBTA42;BJTs NPN; Si; 300V 0.500A 219MHz Diodes Inc. NPN Transistor .MODEL DI_MMBTA42 NPN (IS=51.0f NF=1.00 BF=194 VAF=312 + IKF=0.182 ISE=34.9p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.450 RE=11.6 RB=46.3 RC=4.63 + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 + MJC=0.300 TF=481p TR=115n EG=1.12 ) *SRC=MMBTA55;DI_MMBTA55;BJTs PNP; Si; 60.0V 0.500A 163MHz Diodes Inc. Transistor .MODEL DI_MMBTA55 PNP (IS=50.8f NF=1.00 BF=479 VAF=139 + IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 + MJC=0.300 TF=660p TR=149n EG=1.12 ) *SRC=MMBTA56;DI_MMBTA56;BJTs PNP; Si; 80.0V 0.500A 163MHz Diodes Inc. Transistor .MODEL DI_MMBTA56 PNP (IS=50.8f NF=1.00 BF=479 VAF=161 + IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 + MJC=0.300 TF=660p TR=149n EG=1.12 ) *SRC=MMBTA92;DI_MMBTA92;BJTs PNP; Si; 300V 0.500A 60.0MHz Diodes Inc. Transistor .MODEL DI_MMBTA92 PNP (IS=177f NF=1.00 BF=239 VAF=312 + IKF=72.9m ISE=33.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 MJC=0.300 + TF=2.18n TR=415n EG=1.12 ) *SRC=MMBTH10;DI_MMBTH10;BJTs NPN; Si; 25.0V 50.0mA 1.00kMHz Diodes Inc. Transistor .MODEL DI_MMBTH10 NPN (IS=1.26e-016 NF=1.00 BF=95.8 VAF=90.0 + IKF=24.3m ISE=1.28p NE=2.00 BR=4.00 NR=1.00 + VAR=12.0 IKR=60.0m RE=1.51 RB=6.05 RC=0.605 + XTB=1.5 CJE=6.27p VJE=1.10 MJE=0.500 CJC=2.02p VJC=0.300 + MJC=0.300 TF=130p TR=27.4n EG=1.12 ) *SRC=MMBTH24;DI_MMBTH24;BJTs NPN; Si; 40.0V 50.0mA 1.00kMHz Diodes Inc. Transistor .MODEL DI_MMBTH24 NPN (IS=1.26e-016 NF=1.00 BF=95.8 VAF=114 + IKF=24.3m ISE=1.28p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=60.0m RE=1.51 RB=6.05 RC=0.605 + XTB=1.5 CJE=6.27p VJE=1.10 MJE=0.500 CJC=2.02p VJC=0.300 + MJC=0.300 TF=130p TR=27.4n EG=1.12 ) F=496p TR=81.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT2227;DI_MMDT2227_NPN;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT2227_NPN NPN (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300 + MJC=0.300 TF=496p TR=81.1n EG=1.12 ) *SRC=MMDT2227;DI_MMDT2227_PNP;BJTs PNP; Si; 60.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT2227_PNP PNP (IS=61.2f NF=1.00 BF=410 VAF=139 + IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=491p TR=81.1n EG=1.12 ) ***************************************************************************************************************************************** ***************************************************************************************************************************************** *SRC=MMDT2907A;DI_MMDT2907A;BJTs PNP; Si; 60.0V 0.600A 300MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT2907A PNP (IS=61.2f NF=1.00 BF=410 VAF=139 + IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=491p TR=81.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT3904;DI_MMDT3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT3904 NPN (IS=5.81e-016 NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=2.28p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.750 RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=6.86p VJC=0.300 MJC=0.300 + TF=450p TR=70.2n EG=1.12 ) *SRC=MMDT3906;DI_MMDT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT3906 PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114 + IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300 MJC=0.300 + TF=558p TR=84.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT3946;DI_MMDT3946_NPN;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT3946_NPN NPN (IS=5.81e-016 NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=2.28p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.750 RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=6.86p VJC=0.300 + MJC=0.300 TF=450p TR=70.2n EG=1.12 ) *SRC=MMDT3946;DI_MMDT3946_PNP;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT3946_PNP PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114 + IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300 + MJC=0.300 TF=558p TR=84.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT4124;DI_MMDT4124;BJTs NPN; Si; 25.0V 0.200A 347MHz Diodes Inc. BTJs - Single device of dual .MODEL DI_MMDT4124 NPN (IS=5.81e-016 NF=1.00 BF=492 VAF=90.0 + IKF=30.4m ISE=600f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=7.96p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300 + TF=386p TR=69.8n EG=1.12 ) *SRC=MMDT4126;DI_MMDT4126;BJTs PNP; Si; 25.0V 0.200A 257MHz Diodes Inc. BTJs - Single device of dual .MODEL DI_MMDT4126 PNP (IS=7.06e-016 NF=1.00 BF=492 VAF=90.0 + IKF=60.7m ISE=935f NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.150 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=7.24p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300 + TF=585p TR=94.0n EG=1.12 ) *SRC=MMBT4124;DI_MMBT4124;BJTs NPN; Si; 30.0V 0.200A 347MHz Diodes Inc. NPN Transistor .MODEL DI_MMBT4124 NPN (IS=20.7f NF=1.00 BF=492 VAF=98.6 + IKF=72.9m ISE=5.54p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=2.63 RB=10.5 RC=1.05 + XTB=1.5 CJE=9.65p VJE=1.10 MJE=0.500 CJC=9.47p VJC=0.300 + MJC=0.300 TF=415p TR=69.8n EG=1.12 ) *SRC=MMBT4126;DI_MMBT4126;BJTs PNP; Si; 25.0V 0.200A 257MHz Diodes Inc. Transistor .MODEL DI_MMBT4126 PNP (IS=20.3f NF=1.00 BF=598 VAF=90.0 + IKF=72.9m ISE=4.52p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.180 RE=0.257 RB=1.03 RC=0.103 + XTB=1.5 CJE=13.8p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300 + MJC=0.300 TF=569p TR=93.4n EG=1.12 ) *SRC=MMDT4401;DI_MMDT4401;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT4401 NPN (IS=60.7f NF=1.00 BF=410 VAF=114 + IKF=0.219 ISE=19.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 MJC=0.300 + TF=539p TR=84.1n EG=1.12 ) *SRC=MMDT4403;DI_MMDT4403;BJTs PNP; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT4403 PNP (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.340 ISE=24.7p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 MJC=0.300 + TF=516p TR=84.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT4413;DI_MMDT4413_NPN;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs - Complementaryl .MODEL DI_MMDT4413_NPN NPN (IS=60.7f NF=1.00 BF=410 VAF=114 + IKF=0.219 ISE=19.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 + MJC=0.300 TF=539p TR=84.1n EG=1.12 ) *SRC=MMDT4413;DI_MMDT4413_PNP;BJTs PNP; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs - Complementary .MODEL DI_MMDT4413_PNP PNP (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.340 ISE=24.7p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=516p TR=84.1n EG=1.12 ) ***************************************************************************************************************************************** *SRC=MMDT5401;DI_MMDT5401;BJTs PNP; Si; 150V 0.200A 257MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMDT5401 PNP (IS=6.83f NF=1.00 BF=328 VAF=220 + IKF=72.9m ISE=4.78p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.157 RB=0.630 RC=63.0m + XTB=1.5 CJE=52.0p VJE=1.10 MJE=0.500 CJC=16.8p VJC=0.300 + MJC=0.300 TF=450p TR=95.4n EG=1.12 ) *SRC=MMDT5551;DI_MMDT5551;BJTs NPN; Si; 160V 0.200A 130MHz Diodes Inc. Transistor - single device of dual .MODEL DI_MMDT5551 NPN (IS=20.2f NF=1.00 BF=219 VAF=228 + IKF=36.4m ISE=8.72p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.257 RB=1.03 RC=0.103 + XTB=1.5 CJE=27.9p VJE=1.10 MJE=0.500 CJC=8.99p VJC=0.300 MJC=0.300 + TF=1.13n TR=193n EG=1.12 ) *SRC=MMST2222A;DI_MMST2222A;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs .MODEL DI_MMST2222A NPN (IS=61.0f NF=1.00 BF=410 VAF=114 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=15.0p VJC=0.300 MJC=0.300 + TF=496p TR=84.1n EG=1.12 ) *SRC=MMST2907A;DI_MMST2907A;BJTs PNP; Si; 60.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_MMST2907A PNP (IS=59.9f NF=1.00 BF=410 VAF=139 + IKF=0.273 ISE=21.9p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.675 RE=0.344 RB=1.38 RC=0.138 + XTB=1.5 CJE=30.2p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 MJC=0.300 + TF=513p TR=29.9n EG=1.12 ) *SRC=MMST3904;DI_MMST3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs .MODEL DI_MMST3904 NPN (IS=3.95e-016 NF=1.00 BF=410 VAF=114 + IKF=30.4m ISE=593f NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=9.95p VJE=1.10 MJE=0.500 CJC=8.99p VJC=0.300 MJC=0.300 + TF=367p TR=70.2n EG=1.12 ) *SRC=MMST3906;DI_MMST3906;BJTs PNP; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs .MODEL DI_MMST3906 PNP (IS=7.06e-016 NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=1.12p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=7.84p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300 + TF=422p TR=84.1n EG=1.12 ) *SRC=MMST4124;DI_MMST4124;BJTs NPN; Si; 25.0V 0.200A 347MHz Diodes Inc. BJTs .MODEL DI_MMST4124 NPN (IS=5.81e-016 NF=1.00 BF=492 VAF=90.0 + IKF=30.4m ISE=600f NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283 + XTB=1.5 CJE=7.84p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300 + TF=387p TR=69.8n EG=1.12 ) *SRC=MMST4126;DI_MMST4126;BJTs PNP; Si; 25.0V 0.200A 257MHz Diodes Inc. BJTs .MODEL DI_MMST4126 PNP (IS=7.06e-016 NF=1.00 BF=492 VAF=90.0 + IKF=48.6m ISE=836f NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.120 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=7.24p VJE=1.10 MJE=0.500 CJC=6.86p VJC=0.300 MJC=0.300 + TF=576p TR=94.0n EG=1.12 ) *SRC=MMST4401;DI_MMST4401;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_MMST4401 NPN (IS=1.27p NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=533p TR=84.1n EG=1.12 ) *SRC=MMST4403;DI_MMST4403;BJTs PNP; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs .MODEL DI_MMST4403 PNP (IS=60.4f NF=1.00 BF=410 VAF=114 + IKF=0.334 ISE=24.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.825 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=31.4p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 MJC=0.300 + TF=486p TR=81.1n EG=1.12 ) *SRC=MMST5401;DI_MMST5401;BJTs PNP; Si; 150V 0.200A 257MHz Diodes Inc. BJTs - Single device of dual .MODEL DI_MMST5401 PNP (IS=6.83f NF=1.00 BF=328 VAF=220 + IKF=72.9m ISE=4.78p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.180 RE=0.157 RB=0.630 RC=63.0m + XTB=1.5 CJE=52.0p VJE=1.10 MJE=0.500 CJC=16.8p VJC=0.300 + MJC=0.300 TF=450p TR=95.4n EG=1.12 ) *SRC=MMST5551;DI_MMST5551;BJTs NPN; Si; 160V 0.200A 130MHz Diodes Inc. Transistor .MODEL DI_MMST5551 NPN (IS=20.2f NF=1.00 BF=219 VAF=228 + IKF=36.4m ISE=8.72p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=90.0m RE=0.257 RB=1.03 RC=0.103 + XTB=1.5 CJE=27.9p VJE=1.10 MJE=0.500 CJC=8.99p VJC=0.300 MJC=0.300 + TF=1.13n TR=193n EG=1.12 ) *SRC=MMSTA05;DI_MMSTA05;BJTs NPN; Si; 60.0V 0.500A 219MHz Diodes Inc. BJTs .MODEL DI_MMSTA05 NPN (IS=94.2f NF=1.00 BF=331 VAF=139 + IKF=0.146 ISE=24.9p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.360 RE=0.215 RB=0.860 RC=86.0m + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 MJC=0.300 + TF=633p TR=112n EG=1.12 ) *SRC=MMSTA06;DI_MMSTA06;BJTs NPN; Si; 80.0V 0.500A 219MHz Diodes Inc. BJTs .MODEL DI_MMSTA06 NPN (IS=94.2f NF=1.00 BF=301 VAF=161 + IKF=0.146 ISE=27.4p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.360 RE=0.215 RB=0.860 RC=86.0m + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 MJC=0.300 + TF=633p TR=112n EG=1.12 ) *SRC=MMSTA42;DI_MMSTA42;BJTs NPN; Si; 300V 0.200A 347MHz Diodes Inc. BJTs .MODEL DI_MMSTA42 NPN (IS=109f NF=1.00 BF=219 VAF=312 + IKF=0.425 ISE=69.3p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=1.05 RE=1.21 RB=4.86 RC=0.486 + XTB=1.5 CJE=32.9p VJE=1.10 MJE=0.500 CJC=10.6p VJC=0.300 + MJC=0.300 TF=441p TR=72.5n EG=1.12 ) *SRC=MMSTA55;DI_MMSTA55;BJTs PNP; Si; 60.0V 0.500A 70.0MHz Diodes Inc. BJTs .MODEL DI_MMSTA55 PNP (IS=50.2f NF=1.00 BF=331 VAF=139 + IKF=0.182 ISE=20.3p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.450 RE=0.133 RB=0.532 RC=53.2m + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 MJC=0.300 + TF=2.16n TR=350n EG=1.12 ) *SRC=MMSTA56;DI_MMSTA56;BJTs PNP; Si; 80.0V 0.500A 70.0MHz Diodes Inc. BJTs .MODEL DI_MMSTA56 PNP (IS=50.2f NF=1.00 BF=331 VAF=161 + IKF=0.182 ISE=20.3p NE=2.00 BR=4.00 NR=1.00 + VAR=16.0 IKR=0.450 RE=0.133 RB=0.532 RC=53.2m + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 MJC=0.300 + TF=2.16n TR=350n EG=1.12 ) *SRC=MMSTA92;DI_MMSTA92;BJTs PNP; Si; 300V 0.100A 60.0MHz Diodes Inc. BJTs .MODEL DI_MMSTA92 PNP (IS=53.7f NF=1.00 BF=164 VAF=312 + IKF=66.8m ISE=25.7p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.165 RE=0.565 RB=2.26 RC=0.226 + XTB=1.5 CJE=52.0p VJE=1.10 MJE=0.500 CJC=16.8p VJC=0.300 + MJC=0.300 TF=2.46n TR=426n EG=1.12 ) *SRC=MMBT6427;DI_MMBT6427;BJTs NPN;Darlington;40.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DII_MMBT6427 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=600f NF=1.00 BF=448 VAF=114 + IKF=0.400 ISE=10.9p NE=2.00 BR=4.00 NR=1.00 + VAR=48.0 IKR=0.600 RE=0.300 RB=1.20 RC=0.120 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=1.30n TR=659n ) *SRC=MMBTA13;DI_MMBTA13;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. NPN Darlington *SYM=DARBJTN .SUBCKT DI_MMBTA13 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=360f NF=1.00 BF=134 VAF=98.6 + IKF=0.240 ISE=21.9p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.360 RE=4.00 RB=16.0 RC=1.60 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=3.77n TR=617n ) .MODEL DSUB D( IS=360f N=1 RS=4.00 BV=30.0 + IBV=.001 CJO=13.9p TT=617n ) .ENDS *SRC=MMBTA14;DI_MMBTA14;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DI_MMBTA14 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=360f NF=1.00 BF=141 VAF=98.6 + IKF=0.240 ISE=20.8p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.360 RE=0.333 RB=1.33 RC=0.133 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n )=0.133 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n ) .MODEL DSUB D( IS=360f N=1 RS=0.333 BV=30.0 + IBV=.001 CJO=13.9p TT=614n ) *SRC=MMBTA28;DI_MMBTA28;BJTs NPN;Darlington;80.0V 0.500A Diodes Inc. NPN Darlington *SYM=DARBJTN .SUBCKT DI_MMBTA28 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=600f NF=1.00 BF=134 VAF=161 + IKF=0.400 ISE=36.5p NE=2.00 BR=4.00 NR=1.00 + VAR=48.0 IKR=0.600 RE=0.500 RB=2.00 RC=0.200 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=6.15n TR=1.01u ) .MODEL DSUB D( IS=600f N=1 RS=0.500 BV=80.0 + IBV=.001 CJO=13.9p TT=1.01u ) .ENDS *SRC=MMBTA63;DI_MMBTA63;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTP .SUBCKT DII_MMBTA63 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 col emtr DSUB D2 base eb DSUB .MODEL QPWR PNP (IS=600f NF=1.00 BF=100 VAF=98.6 + IKF=0.400 ISE=49.0p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136 + XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p + VJC=1.10 MJC=0.240 TF=5.05n TR=641n ) *SRC=MMBTA64;DI_MMBTA64;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTP .SUBCKT DII_MMBTA64 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 col emtr DSUB D2 base eb DSUB .MODEL QPWR PNP (IS=600f NF=1.00 BF=141 VAF=98.6 + IKF=0.400 ISE=34.6p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136 + XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n ) *SRC=MMST6427;DI_MMST6427;BJTs NPN;Darlington;40.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DII_MMST6427 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=600f NF=1.00 BF=448 VAF=114 + IKF=0.400 ISE=10.9p NE=2.00 BR=4.00 NR=1.00 + VAR=48.0 IKR=0.600 RE=0.300 RB=1.20 RC=0.120 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=1.30n TR=659n ) *SRC=MMSTA13;DI_MMSTA13;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DI_MMSTA13 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=360f NF=1.00 BF=100 VAF=98.6 + IKF=0.240 ISE=29.4p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.360 RE=0.333 RB=1.33 RC=0.133 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=5.05n TR=641n ) *SRC=MMSTA14;DI_MMSTA14;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor *SYM=DARBJTN .SUBCKT DI_MMSTA14 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 emtr col DSUB D2 eb base DSUB .MODEL QPWR NPN (IS=360f NF=1.00 BF=141 VAF=98.6 + IKF=0.240 ISE=20.8p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.360 RE=0.333 RB=1.33 RC=0.133 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n ) *SRC=MMSTA63;DI_MMSTA63;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTP .SUBCKT DII_MMSTA63 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 col emtr DSUB D2 base eb DSUB .MODEL QPWR PNP (IS=600f NF=1.00 BF=100 VAF=98.6 + IKF=0.400 ISE=49.0p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136 + XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p + VJC=1.10 MJC=0.240 TF=5.05n TR=641n ) *SRC=MMSTA64;DI_MMSTA64;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor *SYM=DARBJTP .SUBCKT DII_MMSTA64 col base emtr Q1 col base eb QPWR .1 Q2 col eb emtr QPWR D1 col emtr DSUB D2 base eb DSUB .MODEL QPWR PNP (IS=600f NF=1.00 BF=141 VAF=98.6 + IKF=0.400 ISE=34.6p NE=2.00 BR=4.00 NR=1.00 + VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136 + XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p + VJC=1.10 MJC=0.240 TF=3.57n TR=614n ) ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114EH;DI_DCX114EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114EH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114EH;DI_DCX114EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114EK;DI_DCX114EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114EK NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114EK;DI_DCX114EK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114EK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX123JU;DI_DCX123JU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX123JU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX123JU;DI_DCX123JU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX123JU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114TH;DI_DCX114TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114TH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114TH;DI_DCX114TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114TK;DI_DCX114TK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114TK NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114TK;DI_DCX114TK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114TK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114TU;DI_DCX114TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114TU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114TU;DI_DCX114TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114YH;DI_DCX114YH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114YH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114YH;DI_DCX114YH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114YH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114YK;DI_DCX114YK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114YK NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114YK;DI_DCX114YK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114YK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114YU;DI_DCX114YU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114YU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114YU;DI_DCX114YU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114YU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX122LH;DI_DCX122LH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX122LH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX122LH;DI_DCX122LH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX122LH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX122TH;DI_DCX122TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX122TH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX122TH;DI_DCX122TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX122TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX123JH;DI_DCX123JH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX123JH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX123JH;DI_DCX123JH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX123JH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX123JK;DI_DCX123JK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX123JK NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX123JK;DI_DCX123JK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX123JK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX123JU;DI_DCX123JU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX123JU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX123JU;DI_DCX123JU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX123JU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX124EH;DI_DCX124EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX124EH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX124EH;DI_DCX124EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX124EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* *SRC=DCX124EK;DI_DCX124EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX124EK NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX124EK;DI_DCX124EK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX124EK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX124EU;DI_DCX124EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX124EU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX124EU;DI_DCX124EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX124EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX142JH;DI_DCX142JH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX142JH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX142JH;DI_DCX142JH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX142JH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX142TH;DI_DCX142TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX142TH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX142TH;DI_DCX142TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX142TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143EH;DI_DCX143EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143EH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143EH;DI_DCX143EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114EH;DI_DCX114EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114EH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX114EH;DI_DCX114EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX114EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143TK;DI_DCX143TK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143TK NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143TK;DI_DCX143TK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143TK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143TU;DI_DCX143TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143TU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX143TU;DI_DCX143TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX143TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX144EH;DI_DCX144EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX144EH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX144EH;DI_DCX144EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX144EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX144EK;DI_DCX144EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX144EK NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX144EK;DI_DCX144EK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX144EK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX144EU;DI_DCX144EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX144EU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ******************************************************************************************************************************** *************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DCX144EU;DI_DCX144EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DCX144EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 )********* Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114EH;DI_DDA114EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114EH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114EK;DI_DDA114EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114EK NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114EU;DI_DDA114EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114EU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114TH;DI_DDA114TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114TH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114TK;DI_DDA114TK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114TK NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114TU;DI_DDA114TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114TU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114YH;DI_DDA114YH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114YH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114YK;DI_DDA114YK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114YK NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA114YU;DI_DDA114YU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA114YU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA122LH;DI_DDA122LH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA122LH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA122LU;DI_DDA122LU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA122LU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA122TH;DI_DDA122TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA122TH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA122TU;DI_DDA122TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA122TU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA123JH;DI_DDA123JH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA123JH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA123JK;DI_DDA123JK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA123JK NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA123JU;DI_DDA123JU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA123JU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA124EH;DI_DDA124EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA124EH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA124EK;DI_DDA124EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA124EK NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA124EU;DI_DDA124EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA124EU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA142JH;DI_DDA142JH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA142JH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA142JU;DI_DDA142JU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA142JU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA142TH;DI_DDA142TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA142TH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA142TU;DI_DDA142TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA142TU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA143EH;DI_DDA143EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA143EH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA143TH;DI_DDA143TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA143TH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA143TK;DI_DDA143TK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA143TK NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA143TU;DI_DDA143TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA143TU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA144EH;DI_DDA144EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA144EH NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA144EK;DI_DDA144EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA144EK NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDA144EU;DI_DDA144EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDA144EU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC114EH;DI_DDC114EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC114EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC114EK;DI_DDC114EK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC114EK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC114EU;DI_DDC114EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC114EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC114TH;DI_DDC114TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC114TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC114TK;DI_DDC114TK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC114TK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC114TU;DI_DDC114TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC114TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC114YH;DI_DDC114YH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC114YH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC114YK;DI_DDC114YK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC114YK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC114YU;DI_DDC114YU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC114YU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC122LH;DI_DDC122LH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC122LH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC122LH;DI_DDC122LH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC122LH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC122TH;DI_DDC122TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC122TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC122TU;DI_DDC122TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC122TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC123JH;DI_DDC123JH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC123JH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC123JK;DI_DDC123JK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC123JK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC123JU;DI_DDC123JU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC123JU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC124EH;DI_DDC124EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC124EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC124EK;DI_DDC124EK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC124EK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC124EU;DI_DDC124EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC124EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC142JH;DI_DDC142JH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC142JH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC142JU;DI_DDC142JU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC142JU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC142TH;DI_DDC142TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC142TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC142TU;DI_DDC142TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC142TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC143EH;DI_DDC143EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC143EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC143TH;DI_DDC143TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC143TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC143TK;DI_DDC143TK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC143TK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC143TU;DI_DDC143TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC143TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC144EH;DI_DDC144EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC144EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC144EK;DI_DDC144EK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC144EK NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDC144EU;DI_DDC144EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDC144EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA113TCA;DI_DDTA113TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA113TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA113TE;DI_DDTA113TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA113TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA113TKA;DI_DDTA113TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA113TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA113TUA;DI_DDTA113TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA113TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA113ZCA;DI_DDTA113ZCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA113ZCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA113ZE;DI_DDTA113ZE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA113ZE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA113ZKA;DI_DDTA113ZKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA113ZKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA113ZUA;DI_DDTA113ZUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA113ZUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114ECA;DI_DDTA114ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114ECA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114EE;DI_DDTA114EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114EKA;DI_DDTA114EKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114EKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114EUA;DI_DDTA114EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114EUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114GCA;DI_DDTA114GCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114GCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114GE;DI_DDTA114GE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114GE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114GUA;DI_DDTA114GUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114GUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114KA;DI_DDTA114KA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114KA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114TCA;DI_DDTA114TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114TE;DI_DDTA114TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114TKA;DI_DDTA114TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114TUA;DI_DDTA114TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114WCA;DI_DDTA114WCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114WCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114WE;DI_DDTA114WE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114WE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114WKA;DI_DDTA114WKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114WKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114WUA;DI_DDTA114WUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114WUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114YCA;DI_DDTA114YCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114YCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114YE;DI_DDTA114YE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114YE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114YKA;DI_DDTA114YKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114YKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA114YUA;DI_DDTA114YUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA114YUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115ECA;DI_DDTA115ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115ECA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115EE;DI_DDTA115EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115EKA;DI_DDTA115EKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115EKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115EUA;DI_DDTA115EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115EUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115GCA;DI_DDTA115GCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115GCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115GE;DI_DDTA115GE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115GE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115GUA;DI_DDTA115GUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115GUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115KA;DI_DDTA115KA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115KA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115TCA;DI_DDTA115TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115TE;DI_DDTA115TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115TKA;DI_DDTA115TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA115TUA;DI_DDTA115TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA115TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA122LE;DI_DDTA122LE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA122LE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA122LU;DI_DDTA122LU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA122LU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA122TE;DI_DDTA122TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA122TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA122TU;DI_DDTA122TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA122TU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123ECA;DI_DDTA123ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123ECA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123EE;DI_DDTA123EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123EKA;DI_DDTA123EKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123EKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123EUA;DI_DDTA123EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123EUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123JCA;DI_DDTA123JCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123JCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123JE;DI_DDTA123JE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123JE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123JKA;DI_DDTA123JKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123JKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123JUA;DI_DDTA123JUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123JUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123TCA;DI_DDTA123TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123TE;DI_DDTA123TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123TKA;DI_DDTA123TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123TUA;DI_DDTA123TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123YCA;DI_DDTA123YCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123YCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123YE;DI_DDTA123YE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123YE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123YKA;DI_DDTA123YKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123YKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA123YUA;DI_DDTA123YUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA123YUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124ECA;DI_DDTA124ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124ECA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124EE;DI_DDTA124EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124EKA;DI_DDTA124EKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124EKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124EUA;DI_DDTA124EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124EUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124GCA;DI_DDTA124GCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124GCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124GE;DI_DDTA124GE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124GE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124GUA;DI_DDTA124GUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124GUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124KA;DI_DDTA124KA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124KA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124TCA;DI_DDTA124TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124TE;DI_DDTA124TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124TKA;DI_DDTA124TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124TUA;DI_DDTA124TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124XCA;DI_DDTA124XCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124XCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124XE;DI_DDTA124XE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124XE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124XKA;DI_DDTA124XKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124XKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA124XUA;DI_DDTA124XUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA124XUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA125TCA;DI_DDTA125TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA125TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA125TE;DI_DDTA125TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA125TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA125TKA;DI_DDTA125TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA125TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA125TUA;DI_DDTA125TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA125TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA142JE;DI_DDTA142JE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA142JE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA142JU;DI_DDTA142JU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA142JU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA142TE;DI_DDTA142TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA142TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA142TU;DI_DDTA142TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA142TU NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143ECA;DI_DDTA143ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143ECA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143EE;DI_DDTA143EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143EKA;DI_DDTA143EKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143EKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143EUA;DI_DDTA143EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143EUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143FCA;DI_DDTA143FCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143FCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143FE;DI_DDTA143FE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143FE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143FKA;DI_DDTA143FKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143FKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143FUA;DI_DDTA143FUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143FUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143TCA;DI_DDTA143TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143TE;DI_DDTA143TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143TKA;DI_DDTA143TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143TUA;DI_DDTA143TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143XCA;DI_DDTA143XCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143XCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143XE;DI_DDTA143XE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143XE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143XKA;DI_DDTA143XKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143XKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143XUA;DI_DDTA143XUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143XUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143ZCA;DI_DDTA143ZCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143ZCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143ZE;DI_DDTA143ZE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143ZE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143ZKA;DI_DDTA143ZKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143ZKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA143ZUA;DI_DDTA143ZUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA143ZUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144ECA;DI_DDTA144ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144ECA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144EE;DI_DDTA144EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144EKA;DI_DDTA144EKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144EKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144EUA;DI_DDTA144EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144EUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144GCA;DI_DDTA144GCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144GCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144GE;DI_DDTA144GE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144GE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144GUA;DI_DDTA144GUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144GUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144KA;DI_DDTA144KA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144KA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144TCA;DI_DDTA144TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144TE;DI_DDTA144TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144TKA;DI_DDTA144TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144TUA;DI_DDTA144TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144VCA;DI_DDTA144VCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144VCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144VE;DI_DDTA144VE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144VE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144VKA;DI_DDTA144VKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144VKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144VUA;DI_DDTA144VUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144VUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144WCA;DI_DDTA144WCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144WCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144WE;DI_DDTA144WE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144WE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144WKA;DI_DDTA144WKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144WKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTA144WUA;DI_DDTA144WUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTA144WUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB113EC;DI_DDTB113EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB113EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB113EU;DI_DDTB113EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB113EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB113ZC;DI_DDTB113ZC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB113ZC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB113ZU;DI_DDTB113ZU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB113ZU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB114EC;DI_DDTB114EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB114EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB114EU;DI_DDTB114EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB114EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB114GC;DI_DDTB114GC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB114GC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB114GU;DI_DDTB114GU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB114GU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB114TC;DI_DDTB114TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB114TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB114TU;DI_DDTB114TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB114TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB122JC;DI_DDTB122JC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB122JC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB122JU;DI_DDTB122JU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB122JU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB122LC;DI_DDTB122LC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB122LC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB122LU;DI_DDTB122LU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB122LU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB122TC;DI_DDTB122TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB122TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB122TU;DI_DDTB122TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB122TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB123EC;DI_DDTB123EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB123EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB123EU;DI_DDTB123EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB123EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB123TC;DI_DDTB123TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB123TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB123TU;DI_DDTB123TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB123TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB123YC;DI_DDTB123YC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB123YC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB123YU;DI_DDTB123YU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB123YU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB133HC;DI_DDTB133HC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB133HC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB133HU;DI_DDTB133HU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB133HU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB142JC;DI_DDTB142JC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB142JC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB142JU;DI_DDTB142JU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB142JU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB142TC;DI_DDTB142TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB142TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB142TU;DI_DDTB142TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB142TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB143EC;DI_DDTB143EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB143EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB143EU;DI_DDTB143EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB143EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB143TC;DI_DDTB143TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB143TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTB143TU;DI_DDTB143TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTB143TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC113TCA;DI_DDTC113TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC113TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC113TE;DI_DDTC113TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC113TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC113TKA;DI_DDTC113TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC113TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC113TUA;DI_DDTC113TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC113TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC113ZCA;DI_DDTC113ZCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC113ZCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC113ZE;DI_DDTC113ZE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC113ZE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC113ZKA;DI_DDTC113ZKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC113ZKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) *SRC=DDTC113ZUA;DI_DDTC113ZUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC113ZUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114EE;DI_DDTC114EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114EKA;DI_DDTC114EKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114EKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114EUA;DI_DDTC114EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114GE;DI_DDTC114GE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114GE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114GKA;DI_DDTC114GKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114GKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114GUA;DI_DDTC114GUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114GUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114TCA;DI_DDTC114TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114TE;DI_DDTC114TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114TKA;DI_DDTC114TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114TUA;DI_DDTC114TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114WCA;DI_DDTC114WCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114WCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114WE;DI_DDTC114WE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114WE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114WKA;DI_DDTC114WKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114WKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114WUA;DI_DDTC114WUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114WUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114YCA;DI_DDTC114YCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114YCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114YE;DI_DDTC114YE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114YE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114YKA;DI_DDTC114YKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114YKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC114YUA;DI_DDTC114YUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC114YUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115EE;DI_DDTC115EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115EKA;DI_DDTC115EKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115EKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115EUA;DI_DDTC115EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115GE;DI_DDTC115GE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115GE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115GKA;DI_DDTC115GKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115GKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115GUA;DI_DDTC115GUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115GUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115TCA;DI_DDTC115TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115TE;DI_DDTC115TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115TKA;DI_DDTC115TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC115TUA;DI_DDTC115TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC115TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124GE;DI_DDTC124GE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124GE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC122LU;DI_DDTC122LU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC122LU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC142JE;DI_DDTC142JE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC142JE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC122TU;DI_DDTC122TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC122TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123EE;DI_DDTC123EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123EKA;DI_DDTC123EKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123EKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123EUA;DI_DDTC123EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123JCA;DI_DDTC123JCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123JCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123JE;DI_DDTC123JE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123JE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123JKA;DI_DDTC123JKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123JKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123JUA;DI_DDTC123JUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123JUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123TCA;DI_DDTC123TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123TE;DI_DDTC123TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123TKA;DI_DDTC123TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123TUA;DI_DDTC123TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123YCA;DI_DDTC123YCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123YCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123YE;DI_DDTC123YE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123YE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC123YKA;DI_DDTC123YKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123YKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) *SRC=DDTC123YUA;DI_DDTC123YUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC123YUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124EE;DI_DDTC124EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144EKA;DI_DDTC144EKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144EKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124EUA;DI_DDTC124EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124GE;DI_DDTC124GE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124GE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124GKA;DI_DDTC124GKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124GKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124GUA;DI_DDTC124GUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124GUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124TCA;DI_DDTC124TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124TE;DI_DDTC124TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124TKA;DI_DDTC124TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124TUA;DI_DDTC124TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124XCA;DI_DDTC124XCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124XCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124XE;DI_DDTC124XE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124XE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124XKA;DI_DDTC124XKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124XKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC124XUA;DI_DDTC124XUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC124XUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC125TCA;DI_DDTC125TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC125TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC125TE;DI_DDTC125TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC125TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC125TKA;DI_DDTC125TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC125TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC125TUA;DI_DDTC125TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC125TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC122LE;DI_DDTC122LE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC122LE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC122LE;DI_DDTC122LE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC122LE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC142TE;DI_DDTC142TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC142TE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC142TU;DI_DDTC142TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC142TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143EE;DI_DDTC143EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143EKA;DI_DDTC143EKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143EKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143EUA;DI_DDTC143EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143FCA;DI_DDTC143FCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143FCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143FE;DI_DDTC143FE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143FE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143FKA;DI_DDTC143FKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143FKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143FUA;DI_DDTC143FUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143FUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143TCA;DI_DDTC143TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143TE;DI_DDTC143TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143TKA;DI_DDTC143TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143TUA;DI_DDTC143TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143XCA;DI_DDTC143XCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143XCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143XE;DI_DDTC143XE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143XE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143XKA;DI_DDTC143XKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143XKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143XUA;DI_DDTC143XUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143XUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143ZCA;DI_DDTC143ZCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143ZCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143ZE;DI_DDTC143ZE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143ZE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143ZKA;DI_DDTC143ZKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143ZKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC143ZUA;DI_DDTC143ZUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC143ZUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144EE;DI_DDTC144EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144EKA;DI_DDTC144EKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144EKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144EUA;DI_DDTC144EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144GE;DI_DDTC144GE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144GE NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144GKA;DI_DDTC144GKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144GKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** ****************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144GUA;DI_DDTC144GUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144GUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ***************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144TCA;DI_DDTC144TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144TE;DI_DDTC144TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144TKA;DI_DDTC144TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144TUA;DI_DDTC144TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144VCA;DI_DDTC144VCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144VCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144VE;DI_DDTC144VE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144VE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144VKA;DI_DDTC144VKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144VKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144VUA;DI_DDTC144VUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144VUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144WCA;DI_DDTC144WCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144WCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144WE;DI_DDTC144WE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144WE NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144WKA;DI_DDTC144WKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144WKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTC144WUA;DI_DDTC144WUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_DDTC144WUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300 + MJC=0.300 TF=567p TR=119n EG=1.12 ) ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD113EC;DI_DDTD113EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD113EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD113EU;DI_DDTD113EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD113EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD113ZC;DI_DDTD113ZC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD113ZC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD113ZU;DI_DDTD113ZU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD113ZU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD114EC;DI_DDTD114EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD114EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD114EU;DI_DDTD114EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD114EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD114GC;DI_DDTD114GC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD114GC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD114GU;DI_DDTD114GU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD114GU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD114TC;DI_DDTD114TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD114TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD114TU;DI_DDTD114TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD114TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD122JC;DI_DDTD122JC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD122JC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD122JU;DI_DDTD122JU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD122JU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD122LC;DI_DDTD122LC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD122LC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD122LU;DI_DDTD122LU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD122LU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD122TC;DI_DDTD122TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD122TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD122TU;DI_DDTD122TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD122TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD123EC;DI_DDTD123EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD123EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD123EU;DI_DDTD123EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD123EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD123TC;DI_DDTD123TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD123TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD123TU;DI_DDTD123TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD123TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD123YC;DI_DDTD123YC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD123YC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD123YU;DI_DDTD123YU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD123YU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD133HC;DI_DDTD133HC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD133HC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD133HU;DI_DDTD133HU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD133HU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD142JC;DI_DDTD142JC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD142JC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD142JU;DI_DDTD142JU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD142JU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD142TC;DI_DDTD142TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD142TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD142TU;DI_DDTD142TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD142TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD143EC;DI_DDTD143EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD143EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD143EU;DI_DDTD143EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD143EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD143TC;DI_DDTD143TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD143TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ************************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=DDTD143TU;DI_DDTD143TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_DDTD143TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** ****************************************************************************************************************************** 500mA PNP ****************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=MIMD10A;DI_MIMD10A;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs .MODEL DI_MIMD10A PNP (IS=50.6f NF=1.00 BF=534 VAF=102 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300 + MJC=0.300 TF=605p TR=120n EG=1.12 ) ****************************************************************************************************************************** 100mA NPN ****************************************************************************************************************************** Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance. *SRC=MIMD10A;DI_MIMD10A;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs .MODEL DI_MIMD10A NPN (IS=16.8f NF=1.00 BF=766 VAF=127 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300 + MJC=0.300 TF=549p TR=119n EG=1.12 ) ****************************************************************************************************************************** *SRC=2N7002;2N7002;MOSFETs N;Enh;60.0V 0.115A 7.50ohms Diodes Inc. - .MODEL 2N7002 NMOS( LEVEL=1 VTO=2.50 KP=32.0m GAMMA=3.10 + PHI=.75 LAMBDA=39.9u RD=1.05 RS=1.05 + IS=57.5f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- *SRC=2N7002DW;DI_2N7002DW;MOSFETs N;Enh;60.0V 0.115A 3.20ohms Diodes Inc. MOSFET - One element of dual .MODEL DI_2N7002DW NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=34.2u RD=0.448 RS=0.448 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *SRC=2N7002E;DI_2N7002E;MOSFETs N;Enh;60.0V 0.240A 4.00ohms Diodes Inc. MOSFET .MODEL DI_2N7002E NMOS( LEVEL=1 VTO=2.50 KP=781u GAMMA=3.10 + PHI=.75 LAMBDA=83.2u RD=0.560 RS=0.560 + IS=120f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *SRC=2N7002T;DI_2N7002T;MOSFETs N;Enh;60.0V 0.115A 2.00ohms Didoes Inc. MOSFET .MODEL DI_2N7002T NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=40.0u RD=0.280 RS=0.280 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *SRC=2N7002W;DI_2N7002W;MOSFETs N;Enh;60.0V 0.115A 3.20ohms Diodes Inc. MOSFET .MODEL DI_2N7002W NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=40.0u RD=0.448 RS=0.448 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *SRC=BS870;DI_BS870;MOSFETs N;Enh;60.0V 0.250A 3.50ohms Diodes Inc. MOSFET .MODEL DI_BS870 NMOS( LEVEL=1 VTO=2.00 KP=32.0m GAMMA=2.48 + PHI=.75 LAMBDA=86.8u RD=0.490 RS=0.490 + IS=125f PB=0.800 MJ=0.460 CBD=29.8p + CBS=35.8p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- *SRC=BSS123;DI_BSS123;MOSFETs N;Enh;100V 0.170A 1.00ohms Diodes Inc. MOSFET .MODEL DI_BSS123 NMOS( LEVEL=1 VTO=1.00 KP=6.37m GAMMA=1.24 + PHI=.75 LAMBDA=625u RD=0.140 RS=0.140 + IS=85.0f PB=0.800 MJ=0.460 CBD=19.8p + CBS=23.7p CGSO=36.0n CGDO=30.0n CGBO=124n ) * -- Assumes default L=100U W=100U -- *SRC=BSS123W;DI_BSS123W;MOSFETs N;Enh;100V 0.170A 1.00ohms Diodes Inc. MOSFET .MODEL DI_BSS123W NMOS( LEVEL=1 VTO=1.40 KP=0.805 GAMMA=1.74 + PHI=.75 LAMBDA=41.8u RD=0.140 RS=0.140 + IS=85.0f PB=0.800 MJ=0.460 CBD=39.5p + CBS=47.4p CGSO=24.0n CGDO=20.0n CGBO=246n ) * -- Assumes default L=100U W=100U -- *SRC=BSS138;DI_BSS138;MOSFETs N;Enh;50.0V 0.200A 1.40ohms Diodes Inc. MOSFET .MODEL DI_BSS138 NMOS( LEVEL=1 VTO=1.20 KP=7.50m GAMMA=1.49 + PHI=.75 LAMBDA=1.25m RD=0.196 RS=0.196 + IS=100f PB=0.800 MJ=0.460 CBD=18.4p + CBS=22.0p CGSO=28.8n CGDO=24.0n CGBO=247n ) * -- Assumes default L=100U W=100U -- *SRC=BSS138DW;DI_BSS138DW;MOSFETs N;Enh;50.0V 0.200A 1.60ohms Diodes Inc. MOSFET - One element of dual .MODEL DI_BSS138DW NMOS( LEVEL=1 VTO=1.20 KP=50.0m GAMMA=1.49 + PHI=.75 LAMBDA=83.2u RD=0.224 RS=0.224 + IS=100f PB=0.800 MJ=0.460 CBD=56.3p + CBS=67.5p CGSO=96.0n CGDO=80.0n CGBO=324n ) * -- Assumes default L=100U W=100U -- *SRC=BSS138W;DI_BSS138W;MOSFETs N;Enh;50.0V 0.200A 1.60ohms Diodes Inc. MOSFET .MODEL DI_BSS138W NMOS( LEVEL=1 VTO=1.20 KP=50.0m GAMMA=1.49 + PHI=.75 LAMBDA=83.2u RD=0.224 RS=0.224 + IS=100f PB=0.800 MJ=0.460 CBD=56.3p + CBS=67.5p CGSO=96.0n CGDO=80.0n CGBO=324n ) * -- Assumes default L=100U W=100U -- *SRC=BSS84;DI_BSS84;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET .MODEL DI_BSS84 PMOS( LEVEL=1 VTO=-1.60 KP=4.87m GAMMA=1.98 + PHI=.75 LAMBDA=1.25m RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=46.6p + CBS=55.9p CGSO=50.7n CGDO=42.2n CGBO=69.5n ) * -- Assumes default L=100U W=100U -- *SRC=BSS84;DI_BSS84;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET .MODEL DI_BSS84 PMOS( LEVEL=1 VTO=-1.60 KP=4.87m GAMMA=1.98 + PHI=.75 LAMBDA=1.25m RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=46.6p + CBS=55.9p CGSO=50.7n CGDO=42.2n CGBO=69.5n ) * -- Assumes default L=100U W=100U -- *SRC=2N7002;2N7002;MOSFETs N;Enh;60.0V 0.115A 7.50ohms Diodes Inc. - .MODEL 2N7002 NMOS( LEVEL=1 VTO=2.50 KP=32.0m GAMMA=3.10 + PHI=.75 LAMBDA=39.9u RD=1.05 RS=1.05 + IS=57.5f PB=0.800 MJ=0.460 CBD=98.8p + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n ) * -- Assumes default L=100U W=100U -- *SRC=BSS84DW;DI_BSS84DW;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET- One element of dual .MODEL DI_BSS84DW PMOS( LEVEL=1 VTO=-1.60 KP=25.0m GAMMA=1.98 + PHI=.75 LAMBDA=108u RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=43.0p + CBS=51.7p CGSO=144n CGDO=120n CGBO=186n ) * -- Assumes default L=100U W=100U -- *SRC=BSS84W;DI_BSS84W;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET .MODEL DI_BSS84W PMOS( LEVEL=1 VTO=-1.60 KP=25.0m GAMMA=1.98 + PHI=.75 LAMBDA=108u RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=64.2p + CBS=77.1p CGSO=144n CGDO=120n CGBO=341n ) * -- Assumes default L=100U W=100U -- *SRC=DMN100;DI_DMN100;MOSFETs N;Enh;30.0V 1.10A 0.150ohms Diodes Inc. MOSFET .MODEL DI_DMN100 NMOS( LEVEL=1 VTO=2.00 KP=11.5 GAMMA=2.48 + PHI=.75 LAMBDA=306u RD=21.0m RS=21.0m + IS=550f PB=0.800 MJ=0.460 CBD=199p + CBS=238p CGSO=360n CGDO=300n CGBO=840n ) * -- Assumes default L=100U W=100U -- *SRC=MMBF170;DI_MMBF170;MOSFETs N;Enh;60.0V 0.500A 2.10ohms Diodes Inc. MOSFET .MODEL DI_MMBF170 NMOS( LEVEL=1 VTO=2.10 KP=18.8m GAMMA=2.60 + PHI=.75 LAMBDA=1.04m RD=0.294 RS=0.294 + IS=250f PB=0.800 MJ=0.460 CBD=29.8p + CBS=35.8p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- ******************************************************************************************************************************* *SRC=CTA2N1P;DI_CTA2N1P_BJT;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs .MODEL DI_CTA2N1P_BJT NPN (IS=1.27p NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 + MJC=0.300 TF=533p TR=84.1n EG=1.12 ) *SRC=CTA2N1P;DI_CTA2N1P_MOSFET;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET .MODEL DI_CTA2N1P_MOSFET PMOS( LEVEL=1 VTO=-1.60 KP=25.0m GAMMA=1.98 + PHI=.75 LAMBDA=108u RD=0.840 RS=0.840 + IS=65.0f PB=0.800 MJ=0.460 CBD=64.2p + CBS=77.1p CGSO=144n CGDO=120n CGBO=341n ) * -- Assumes default L=100U W=100U -- ******************************************************************************************************************************* ---------------------------------------------------------------------------------------------------------------------------------------------------------------- *SRC=CTA2P1N;DI_CTA2P1N_BJT;BJTs PNP; Si; 40.0V 0.600A 200MHz Diodes Inc. BJTs .MODEL DI_CTA2P1N_BJT PNP (IS=60.4f NF=1.00 BF=410 VAF=114 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 + MJC=0.300 TF=667p TR=84.1n EG=1.12 ) *SRC=CTA2P1N;DI_CTA2P1N_MOSFET;MOSFETs N;Enh;60.0V 0.115A 2.00ohms Didoes Inc. MOSFET .MODEL DI_CTA2P1N_MOSFET NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86 + PHI=.75 LAMBDA=40.0u RD=0.280 RS=0.280 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U -- -----------------------------------------------------------------------------------------------------------------------------------------------------------------