1 *SRC=1N4728A;DI_1N4728A;Diodes;Zener <=10V; 3.30V 1.00W Diodes Inc.
\r
4 .SUBCKT DI_1N4728A 1 2
\r
9 .MODEL DF D ( IS=125p RS=0.620 N=1.10
\r
10 + CJO=364p VJ=0.750 M=0.330 TT=50.1n )
\r
11 .MODEL DR D ( IS=25.0f RS=1.24 N=3.00 )
\r
14 *SRC=1N4729A;DI_1N4729A;Diodes;Zener <=10V; 3.60V 1.00W Diodes Inc.
\r
17 .SUBCKT DI_1N4729A 1 2
\r
22 .MODEL DF D ( IS=114p RS=0.620 N=1.10
\r
23 + CJO=319p VJ=0.750 M=0.330 TT=50.1n )
\r
24 .MODEL DR D ( IS=22.9f RS=0.923 N=3.00 )
\r
27 *SRC=1N4730A;DI_1N4730A;Diodes;Zener <=10V; 3.90V 1.00W Diodes Inc.
\r
30 .SUBCKT DI_1N4730A 1 2
\r
35 .MODEL DF D ( IS=106p RS=0.620 N=1.10
\r
36 + CJO=283p VJ=0.750 M=0.330 TT=50.1n )
\r
37 .MODEL DR D ( IS=21.1f RS=0.645 N=3.00 )
\r
40 *SRC=1N4732A;DI_1N4732A;Diodes;Zener <=10V; 4.70V 1.00W Diodes Inc.
\r
43 .SUBCKT DI_1N4732A 1 2
\r
48 .MODEL DF D ( IS=87.7p RS=0.620 N=1.10
\r
49 + CJO=214p VJ=0.750 M=0.330 TT=50.1n )
\r
50 .MODEL DR D ( IS=17.5f RS=0.333 N=2.28 )
\r
53 *SRC=1N4733A;DI_1N4733A;Diodes;Zener <=10V; 5.10V 1.00W Diodes Inc.
\r
56 .SUBCKT DI_1N4733A 1 2
\r
61 .MODEL DF D ( IS=80.8p RS=0.620 N=1.10
\r
62 + CJO=189p VJ=0.750 M=0.330 TT=50.1n )
\r
63 .MODEL DR D ( IS=16.2f RS=0.296 N=1.87 )
\r
66 *SRC=1N4734A;DI_1N4734A;Diodes;Zener <=10V; 5.60V 1.00W Diodes Inc.
\r
69 .SUBCKT DI_1N4734A 1 2
\r
74 .MODEL DF D ( IS=73.6p RS=0.620 N=1.10
\r
75 + CJO=165p VJ=0.750 M=0.330 TT=50.1n )
\r
76 .MODEL DR D ( IS=14.7f RS=0.256 N=1.49 )
\r
79 *SRC=1N4735A;DI_1N4735A;Diodes;Zener <=10V; 6.20V 1.00W Diodes Inc.
\r
82 .SUBCKT DI_1N4735A 1 2
\r
87 .MODEL DF D ( IS=66.5p RS=0.620 N=1.10
\r
88 + CJO=141p VJ=0.750 M=0.330 TT=50.1n )
\r
89 .MODEL DR D ( IS=13.3f RS=0.218 N=1.16 )
\r
92 *SRC=1N4736A;DI_1N4736A;Diodes;Zener <=10V; 6.80V 1.00W Diodes Inc.
\r
95 .SUBCKT DI_1N4736A 1 2
\r
100 .MODEL DF D ( IS=60.6p RS=0.620 N=1.10
\r
101 + CJO=123p VJ=0.750 M=0.330 TT=50.1n )
\r
102 .MODEL DR D ( IS=12.1f RS=0.209 N=1.00 )
\r
105 *SRC=1N4737A;DI_1N4737A;Diodes;Zener <=10V; 7.50V 1.00W Diodes Inc.
\r
108 .SUBCKT DI_1N4737A 1 2
\r
113 .MODEL DF D ( IS=54.9p RS=0.620 N=1.10
\r
114 + CJO=106p VJ=0.750 M=0.330 TT=50.1n )
\r
115 .MODEL DR D ( IS=11.0f RS=0.247 N=1.09 )
\r
118 *SRC=1N4738A;DI_1N4738A;Diodes;Zener <=10V; 8.20V 1.00W Diodes Inc.
\r
121 .SUBCKT DI_1N4738A 1 2
\r
126 .MODEL DF D ( IS=50.2p RS=0.620 N=1.10
\r
127 + CJO=92.8p VJ=0.750 M=0.330 TT=50.1n )
\r
128 .MODEL DR D ( IS=10.0f RS=0.288 N=1.15 )
\r
131 *SRC=1N4739A;DI_1N4739A;Diodes;Zener <=10V; 9.10V 1.00W Diodes Inc.
\r
134 .SUBCKT DI_1N4739A 1 2
\r
139 .MODEL DF D ( IS=45.3p RS=0.620 N=1.10
\r
140 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
\r
141 .MODEL DR D ( IS=9.05f RS=0.344 N=1.24 )
\r
144 *SRC=1N4740A;DI_1N4740A;Diodes;Zener <=10V; 10.0V 1.00W Diodes Inc.
\r
147 .SUBCKT DI_1N4740A 1 2
\r
152 .MODEL DF D ( IS=41.2p RS=0.620 N=1.10
\r
153 + CJO=68.9p VJ=0.750 M=0.330 TT=50.1n )
\r
154 .MODEL DR D ( IS=8.24f RS=0.403 N=1.30 )
\r
157 *SRC=1N4741A;DI_1N4741A;Diodes;Zener 10V-50V; 11.0V 1.00W Diodes Inc.
\r
160 .SUBCKT DI_1N4741A 1 2
\r
165 .MODEL DF D ( IS=37.5p RS=0.620 N=1.10
\r
166 + CJO=101p VJ=1.00 M=0.330 TT=50.1n )
\r
167 .MODEL DR D ( IS=7.49f RS=0.474 N=1.41 )
\r
170 *SRC=1N4742A;DI_1N4742A;Diodes;Zener 10V-50V; 12.0V 1.00W Diodes Inc.
\r
173 .SUBCKT DI_1N4742A 1 2
\r
178 .MODEL DF D ( IS=34.3p RS=0.620 N=1.10
\r
179 + CJO=94.2p VJ=1.00 M=0.330 TT=50.1n )
\r
180 .MODEL DR D ( IS=6.87f RS=0.550 N=1.49 )
\r
183 *SRC=1N4743A;DI_1N4743A;Diodes;Zener 10V-50V; 13.0V 1.00W Diodes Inc.
\r
186 .SUBCKT DI_1N4743A 1 2
\r
191 .MODEL DF D ( IS=31.7p RS=0.620 N=1.10
\r
192 + CJO=88.1p VJ=1.00 M=0.330 TT=50.1n )
\r
193 .MODEL DR D ( IS=6.34f RS=0.630 N=1.55 )
\r
196 *SRC=1N4744A;DI_1N4744A;Diodes;Zener 10V-50V; 15.0V 1.00W Diodes Inc.
\r
199 .SUBCKT DI_1N4744A 1 2
\r
204 .MODEL DF D ( IS=27.5p RS=0.620 N=1.10
\r
205 + CJO=78.3p VJ=1.00 M=0.330 TT=50.1n )
\r
206 .MODEL DR D ( IS=5.49f RS=0.804 N=1.77 )
\r
209 *SRC=1N4745A;DI_1N4745A;Diodes;Zener 10V-50V; 16.0V 1.00W Diodes Inc.
\r
212 .SUBCKT DI_1N4745A 1 2
\r
217 .MODEL DF D ( IS=25.7p RS=0.620 N=1.10
\r
218 + CJO=74.4p VJ=1.00 M=0.330 TT=50.1n )
\r
219 .MODEL DR D ( IS=5.15f RS=0.897 N=1.80 )
\r
222 *SRC=1N4746A;DI_1N4746A;Diodes;Zener 10V-50V; 18.0V 1.00W Diodes Inc.
\r
225 .SUBCKT DI_1N4746A 1 2
\r
230 .MODEL DF D ( IS=22.9p RS=0.620 N=1.10
\r
231 + CJO=67.8p VJ=1.00 M=0.330 TT=50.1n )
\r
232 .MODEL DR D ( IS=4.58f RS=1.10 N=1.98 )
\r
235 *SRC=1N4747A;DI_1N4747A;Diodes;Zener 10V-50V; 20.0V 1.00W Diodes Inc.
\r
238 .SUBCKT DI_1N4747A 1 2
\r
243 .MODEL DF D ( IS=20.6p RS=0.620 N=1.10
\r
244 + CJO=62.5p VJ=1.00 M=0.330 TT=50.1n )
\r
245 .MODEL DR D ( IS=4.12f RS=1.31 N=2.12 )
\r
248 *SRC=1N4748A;DI_1N4748A;Diodes;Zener 10V-50V; 22.0V 1.00W Diodes Inc.
\r
251 .SUBCKT DI_1N4748A 1 2
\r
256 .MODEL DF D ( IS=18.7p RS=0.620 N=1.10
\r
257 + CJO=58.2p VJ=1.00 M=0.330 TT=50.1n )
\r
258 .MODEL DR D ( IS=3.75f RS=1.54 N=2.29 )
\r
261 *SRC=1N4749A;DI_1N4749A;Diodes;Zener 10V-50V; 24.0V 1.00W Diodes Inc.
\r
264 .SUBCKT DI_1N4749A 1 2
\r
269 .MODEL DF D ( IS=17.2p RS=0.620 N=1.10
\r
270 + CJO=54.6p VJ=1.00 M=0.330 TT=50.1n )
\r
271 .MODEL DR D ( IS=3.43f RS=1.79 N=2.42 )
\r
274 *SRC=1N4750A;DI_1N4750A;Diodes;Zener 10V-50V; 27.0V 1.00W Diodes Inc.
\r
277 .SUBCKT DI_1N4750A 1 2
\r
282 .MODEL DF D ( IS=15.3p RS=0.620 N=1.10
\r
283 + CJO=50.2p VJ=1.00 M=0.330 TT=50.1n )
\r
284 .MODEL DR D ( IS=3.05f RS=2.18 N=2.68 )
\r
287 *SRC=1N4751A;DI_1N4751A;Diodes;Zener 10V-50V; 30.0V 1.00W Diodes Inc.
\r
290 .SUBCKT DI_1N4751A 1 2
\r
295 .MODEL DF D ( IS=13.7p RS=0.620 N=1.10
\r
296 + CJO=46.7p VJ=1.00 M=0.330 TT=50.1n )
\r
297 .MODEL DR D ( IS=2.75f RS=2.61 N=2.87 )
\r
300 *SRC=1N4752A;DI_1N4752A;Diodes;Zener 10V-50V; 33.0V 1.00W Diodes Inc.
\r
303 .SUBCKT DI_1N4752A 1 2
\r
308 .MODEL DF D ( IS=12.5p RS=0.620 N=1.10
\r
309 + CJO=43.8p VJ=1.00 M=0.330 TT=50.1n )
\r
310 .MODEL DR D ( IS=2.50f RS=3.07 N=2.98 )
\r
313 *SRC=1N4753A;DI_1N4753A;Diodes;Zener 10V-50V; 36.0V 1.00W Diodes Inc.
\r
316 .SUBCKT DI_1N4753A 1 2
\r
321 .MODEL DF D ( IS=11.4p RS=0.620 N=1.10
\r
322 + CJO=41.4p VJ=1.00 M=0.330 TT=50.1n )
\r
323 .MODEL DR D ( IS=2.29f RS=4.38 N=3.00 )
\r
326 *SRC=1N4754A;DI_1N4754A;Diodes;Zener 10V-50V; 39.0V 1.00W Diodes Inc.
\r
329 .SUBCKT DI_1N4754A 1 2
\r
334 .MODEL DF D ( IS=10.6p RS=0.620 N=1.10
\r
335 + CJO=39.4p VJ=1.00 M=0.330 TT=50.1n )
\r
336 .MODEL DR D ( IS=2.11f RS=5.78 N=3.00 )
\r
339 *SRC=1N4755A;DI_1N4755A;Diodes;Zener 10V-50V; 43.0V 1.00W Diodes Inc.
\r
342 .SUBCKT DI_1N4755A 1 2
\r
347 .MODEL DF D ( IS=9.58p RS=0.620 N=1.10
\r
348 + CJO=37.1p VJ=1.00 M=0.330 TT=50.1n )
\r
349 .MODEL DR D ( IS=1.92f RS=7.99 N=3.00 )
\r
352 *SRC=1N4756A;DI_1N4756A;Diodes;Zener 10V-50V; 47.0V 1.00W Diodes Inc.
\r
355 .SUBCKT DI_1N4756A 1 2
\r
360 .MODEL DF D ( IS=8.77p RS=0.620 N=1.10
\r
361 + CJO=35.2p VJ=1.00 M=0.330 TT=50.1n )
\r
362 .MODEL DR D ( IS=1.75f RS=10.2 N=3.00 )
\r
365 *SRC=1N4757A;DI_1N4757A;Diodes;Zener >50V; 51.0V 1.00W Diodes Inc. Zener
\r
367 .SUBCKT DI_1N4757A 1 2
\r
372 .MODEL DF D ( IS=8.08p RS=0.620 N=1.10
\r
373 + CJO=33.6p VJ=1.00 M=0.330 TT=50.1n )
\r
374 .MODEL DR D ( IS=1.62f RS=12.4 N=3.00 )
\r
377 *SRC=1N4758A;DI_1N4758A;Diodes;Zener >50V; 56.0V 1.00W Diodes Inc. Zener
\r
379 .SUBCKT DI_1N4758A 1 2
\r
384 .MODEL DF D ( IS=7.36p RS=0.620 N=1.10
\r
385 + CJO=32.0p VJ=1.00 M=0.330 TT=50.1n )
\r
386 .MODEL DR D ( IS=1.47f RS=15.5 N=3.00 )
\r
389 *SRC=1N4759A;DI_1N4759A;Diodes;Zener >50V; 62.0V 1.00W Diodes Inc. Zener
\r
391 .SUBCKT DI_1N4759A 1 2
\r
396 .MODEL DF D ( IS=6.65p RS=0.620 N=1.10
\r
397 + CJO=30.3p VJ=1.00 M=0.330 TT=50.1n )
\r
398 .MODEL DR D ( IS=1.33f RS=19.6 N=3.00 )
\r
401 *SRC=1N4760A;DI_1N4760A;Diodes;Zener >50V; 68.0V 1.00W Diodes Inc. Zener
\r
403 .SUBCKT DI_1N4760A 1 2
\r
408 .MODEL DF D ( IS=6.06p RS=0.620 N=1.10
\r
409 + CJO=29.0p VJ=1.00 M=0.330 TT=50.1n )
\r
410 .MODEL DR D ( IS=1.21f RS=24.6 N=3.00 )
\r
413 *SRC=1N4761A;DI_1N4761A;Diodes;Zener >50V; 75.0V 1.00W Diodes Inc. Zener
\r
415 .SUBCKT DI_1N4761A 1 2
\r
420 .MODEL DF D ( IS=5.49p RS=0.620 N=1.10
\r
421 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n )
\r
422 .MODEL DR D ( IS=1.10f RS=30.4 N=3.00 )
\r
425 *SRC=1N4762A;DI_1N4762A;Diodes;Zener >50V; 82.0V 1.00W Diodes Inc. Zener
\r
427 .SUBCKT DI_1N4762A 1 2
\r
432 .MODEL DF D ( IS=5.02p RS=0.620 N=1.10
\r
433 + CJO=26.6p VJ=1.00 M=0.330 TT=50.1n )
\r
434 .MODEL DR D ( IS=1.00f RS=36.8 N=3.00 )
\r
437 *SRC=1N4763A;DI_1N4763A;Diodes;Zener >50V; 91.0V 1.00W Diodes Inc. Zener
\r
439 .SUBCKT DI_1N4763A 1 2
\r
444 .MODEL DF D ( IS=4.53p RS=0.620 N=1.10
\r
445 + CJO=25.4p VJ=1.00 M=0.330 TT=50.1n )
\r
446 .MODEL DR D ( IS=9.05e-016 RS=47.1 N=3.00 )
\r
449 *SRC=1N4764A;DI_1N4764A;Diodes;Zener >50V; 100V 1.00W Diodes Inc. Zener
\r
451 .SUBCKT DI_1N4764A 1 2
\r
456 .MODEL DF D ( IS=4.12p RS=0.620 N=1.10
\r
457 + CJO=24.5p VJ=1.00 M=0.330 TT=50.1n )
\r
458 .MODEL DR D ( IS=8.24e-016 RS=56.8 N=3.00 )
\r
461 *SRC=1N5221B;DI_1N5221B;Diodes;Zener <=10V; 2.40V 0.500W DIODES INC ZENER
\r
463 .SUBCKT DI_1N5221B 1 2
\r
468 .MODEL DF D ( IS=85.8p RS=2.47m N=1.10
\r
469 + CJO=388p VJ=0.750 M=0.330 TT=50.1n )
\r
470 .MODEL DR D ( IS=17.2f RS=26.1 N=3.00 )
\r
473 *SRC=1N5231B;DI_1N5231B;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc.
\r
476 .SUBCKT DI_1N5231B 1 2
\r
481 .MODEL DF D ( IS=40.4p RS=2.32 N=1.10
\r
482 + CJO=94.6p VJ=0.750 M=0.330 TT=50.1n )
\r
483 .MODEL DR D ( IS=8.08f RS=13.1 N=3.00 )
\r
486 *SRC=1N5233B;DI_1N5233B;Diodes;Zener <=10V; 6.00V 0.500W Diodes Inc. Zener
\r
488 .SUBCKT DI_1N5233B 1 2
\r
493 .MODEL DF D ( IS=34.3p RS=1.24 N=1.10
\r
494 + CJO=74.2p VJ=0.750 M=0.330 TT=50.1n )
\r
495 .MODEL DR D ( IS=6.87f RS=0.460 N=1.19 )
\r
498 *SRC=1N5235B;DI_1N5235B;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. Zener
\r
500 .SUBCKT DI_1N5235B 1 2
\r
505 .MODEL DF D ( IS=30.3p RS=1.24 N=1.10
\r
506 + CJO=61.5p VJ=0.750 M=0.330 TT=50.1n )
\r
507 .MODEL DR D ( IS=6.06f RS=1.15 N=2.97 )
\r
510 *SRC=1N5239B;DI_1N5239B;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc.
\r
513 .SUBCKT DI_1N5239B 1 2
\r
518 .MODEL DF D ( IS=22.6p RS=2.24 N=1.10
\r
519 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )
\r
520 .MODEL DR D ( IS=4.53f RS=6.11 N=3.00 )
\r
523 *SRC=1N5241B;DI_1N5241B;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. Zener
\r
525 .SUBCKT DI_1N5241B 1 2
\r
530 .MODEL DF D ( IS=18.7p RS=1.24 N=1.10
\r
531 + CJO=58.2p VJ=1.00 M=0.330 TT=50.1n )
\r
532 .MODEL DR D ( IS=3.75f RS=0.949 N=2.45 )
\r
535 *SRC=AZ23C10;DI_AZ23C10;Diodes;Zener <=10V; 10.0V 0.300W Diodes Inc. Per node. Device contains two
\r
537 .SUBCKT DI_AZ23C10 1 2
\r
542 .MODEL DF D ( IS=12.4p RS=31.6 N=1.10
\r
543 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
\r
545 *SRC=AZ23C10W;DI_AZ23C10W;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. Per node. Device contains two
\r
547 .SUBCKT DI_AZ23C10W 1 2
\r
552 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10
\r
553 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
\r
554 .MODEL DR D ( IS=1.65f RS=3.45 N=2.23 )
\r
556 *SRC=AZ23C11;DI_AZ23C11;Diodes;Zener 10V-50V; 11.0V 0.300W Diodes Inc. Per node. Device contains two
\r
558 .SUBCKT DI_AZ23C11 1 2
\r
563 .MODEL DF D ( IS=11.2p RS=31.3 N=1.10
\r
564 + CJO=41.5p VJ=1.00 M=0.330 TT=50.1n )
\r
566 *SRC=AZ23C12;DI_AZ23C12;Diodes;Zener 10V-50V; 12.0V 0.300W Diodes Inc. Per node. Device contains two
\r
568 .SUBCKT DI_AZ23C12 1 2
\r
573 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10
\r
574 + CJO=39.0p VJ=1.00 M=0.330 TT=50.1n )
\r
576 *SRC=AZ23C13;DI_AZ23C13;Diodes;Zener 10V-50V; 13.0V 0.300W Diodes Inc. Per node. Device contains two
\r
578 .SUBCKT DI_AZ23C13 1 2
\r
583 .MODEL DF D ( IS=9.51p RS=30.8 N=1.10
\r
584 + CJO=37.7p VJ=1.00 M=0.330 TT=50.1n )
\r
586 *SRC=AZ23C15;DI_AZ23C15;Diodes;Zener 10V-50V; 15.0V 0.300W Diodes Inc. Per node. Device contains two
\r
588 .SUBCKT DI_AZ23C15 1 2
\r
593 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10
\r
594 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n )
\r
596 *SRC=AZ23C16;DI_AZ23C16;Diodes;Zener 10V-50V; 16.0V 0.300W Diodes Inc. Per node. Device contains two
\r
598 .SUBCKT DI_AZ23C16 1 2
\r
603 .MODEL DF D ( IS=7.72p RS=30.2 N=1.10
\r
604 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )
\r
606 *SRC=AZ23C18;DI_AZ23C18;Diodes;Zener 10V-50V; 18.0V 0.300W Diodes Inc. Per node. Device contains two
\r
608 .SUBCKT DI_AZ23C18 1 2
\r
613 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10
\r
614 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )
\r
616 *SRC=AZ23C18W;DI_AZ23C18W;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. Per node. Device contains two
\r
618 .SUBCKT DI_AZ23C18W 1 2
\r
623 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10
\r
624 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )
\r
625 .MODEL DR D ( IS=9.16e-016 RS=34.5 N=3.00 )
\r
627 *SRC=AZ23C20;DI_AZ23C20;Diodes;Zener 10V-50V; 20.0V 0.300W Diodes Inc. Per node. Device contains two
\r
629 .SUBCKT DI_AZ23C20 1 2
\r
634 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10
\r
635 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )
\r
637 *SRC=AZ23C22;DI_AZ23C22;Diodes;Zener 10V-50V; 22.0V 0.300W Diodes Inc. Per node. Device contains two
\r
639 .SUBCKT DI_AZ23C22 1 2
\r
644 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10
\r
645 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
647 *SRC=AZ23C24;DI_AZ23C24;Diodes;Zener 10V-50V; 24.0V 0.300W Diodes Inc. Per node. Device contains two
\r
649 .SUBCKT DI_AZ23C24 1 2
\r
654 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10
\r
655 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )
\r
657 *SRC=AZ23C27;DI_AZ23C27;Diodes;Zener 10V-50V; 27.0V 0.300W Diodes Inc. Per node. Device contains two
\r
659 .SUBCKT DI_AZ23C27 1 2
\r
664 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10
\r
665 + CJO=20.7p VJ=1.00 M=0.330 TT=50.1n )
\r
667 *SRC=AZ23C2V7;DI_AZ23C2V7;Diodes;Zener <=10V; 2.70V 0.300W Diodes Inc. Per node. Device contains two
\r
669 .SUBCKT DI_AZ23C2V7 1 2
\r
674 .MODEL DF D ( IS=45.8p RS=35.3 N=1.10
\r
675 + CJO=450p VJ=0.750 M=0.330 TT=50.1n )
\r
677 *SRC=AZ23C30;DI_AZ23C30;Diodes;Zener 10V-50V; 30.0V 0.300W Diodes Inc. Per node. Device contains two
\r
679 .SUBCKT DI_AZ23C30 1 2
\r
684 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10
\r
685 + CJO=19.5p VJ=1.00 M=0.330 TT=50.1n )
\r
687 *SRC=AZ23C33;DI_AZ23C33;Diodes;Zener 10V-50V; 33.0V 0.300W Diodes Inc. Per node. Device contains two
\r
689 .SUBCKT DI_AZ23C33 1 2
\r
694 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10
\r
695 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
\r
697 *SRC=AZ23C36;DI_AZ23C36;Diodes;Zener 10V-50V; 36.0V 0.300W Diodes Inc. Per node. Device contains two
\r
699 .SUBCKT DI_AZ23C36 1 2
\r
704 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10
\r
705 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r
707 *SRC=AZ23C39;DI_AZ23C39;Diodes;Zener 10V-50V; 39.0V 0.300W Diodes Inc. Per node. Device contains two
\r
709 .SUBCKT DI_AZ23C39 1 2
\r
714 .MODEL DF D ( IS=3.17p RS=27.7 N=1.10
\r
715 + CJO=17.0p VJ=1.00 M=0.330 TT=50.1n )
\r
717 *SRC=AZ23C3V0;DI_AZ23C3V0;Diodes;Zener <=10V; 3.00V 0.300W Diodes Inc. Per node. Device contains two
\r
719 .SUBCKT DI_AZ23C3V0 1 2
\r
724 .MODEL DF D ( IS=41.2p RS=35.0 N=1.10
\r
725 + CJO=417p VJ=0.750 M=0.330 TT=50.1n )
\r
727 *SRC=AZ23C3V3;DI_AZ23C3V3;Diodes;Zener <=10V; 3.30V 0.300W Diodes Inc. Per node. Device contains two
\r
729 .SUBCKT DI_AZ23C3V3 1 2
\r
734 .MODEL DF D ( IS=37.5p RS=34.7 N=1.10
\r
735 + CJO=397p VJ=0.750 M=0.330 TT=50.1n )
\r
737 *SRC=AZ23C3V6;DI_AZ23C3V6;Diodes;Zener <=10V; 3.60V 0.300W Diodes Inc. Per node. Device contains two
\r
739 .SUBCKT DI_AZ23C3V6 1 2
\r
744 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10
\r
745 + CJO=384p VJ=0.750 M=0.330 TT=50.1n )
\r
747 *SRC=AZ23C3V9;DI_AZ23C3V9;Diodes;Zener <=10V; 3.60V 0.300W Diodes Inc. Per node. Device contains two
\r
749 .SUBCKT DI_AZ23C3V9 1 2
\r
754 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10
\r
755 + CJO=370p VJ=0.750 M=0.330 TT=50.1n )
\r
757 *SRC=AZ23C43;DI_AZ23C43;Diodes;Zener 10V-50V; 43.0V 0.300W Diodes Inc. Per node. Device contains two
\r
759 .SUBCKT DI_AZ23C43 1 2
\r
764 .MODEL DF D ( IS=2.87p RS=27.4 N=1.10
\r
765 + CJO=16.7p VJ=1.00 M=0.330 TT=50.1n )
\r
767 *SRC=AZ23C47;DI_AZ23C47;Diodes;Zener 10V-50V; 47.0V 0.300W Diodes Inc. Per node. Device contains two
\r
769 .SUBCKT DI_AZ23C47 1 2
\r
774 .MODEL DF D ( IS=2.63p RS=27.2 N=1.10
\r
775 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r
777 *SRC=AZ23C4V3;DI_AZ23C4V3;Diodes;Zener <=10V; 4.30V 0.300W Diodes Inc. Per node. Device contains two
\r
779 .SUBCKT DI_AZ23C4V3 1 2
\r
784 .MODEL DF D ( IS=28.7p RS=34.0 N=1.10
\r
785 + CJO=357p VJ=0.750 M=0.330 TT=50.1n )
\r
787 *SRC=AZ23C4V7;DI_AZ23C4V7;Diodes;Zener <=10V; 4.70V 0.300W Diodes Inc. Per node. Device contains two
\r
789 .SUBCKT DI_AZ23C4V7 1 2
\r
794 .MODEL DF D ( IS=26.3p RS=33.7 N=1.10
\r
795 + CJO=350p VJ=0.750 M=0.330 TT=50.1n )
\r
797 *SRC=AZ23C51;DI_AZ23C51;Diodes;Zener >50V; 51.0V 0.300W Diodes Inc. Per node. Device contains two
\r
799 .SUBCKT DI_AZ23C51 1 2
\r
804 .MODEL DF D ( IS=2.42p RS=26.9 N=1.10
\r
805 + CJO=16.2p VJ=1.00 M=0.330 TT=50.1n )
\r
807 *SRC=AZ23C5V1;DI_AZ23C5V1;Diodes;Zener <=10V; 5.10V 0.300W Diodes Inc. Per node. Device contains two
\r
809 .SUBCKT DI_AZ23C5V1 1 2
\r
814 .MODEL DF D ( IS=24.2p RS=33.5 N=1.10
\r
815 + CJO=132p VJ=0.750 M=0.330 TT=50.1n )
\r
817 *SRC=AZ23C5V6;DI_AZ23C5V6;Diodes;Zener <=10V; 5.60V 0.300W Diodes Inc. Per node. Device contains two
\r
819 .SUBCKT DI_AZ23C5V6 1 2
\r
824 .MODEL DF D ( IS=22.1p RS=33.2 N=1.10
\r
825 + CJO=102p VJ=0.750 M=0.330 TT=50.1n )
\r
827 *SRC=AZ23C5V6W;DI_AZ23C5V6W;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. Per node. Device contains two
\r
829 .SUBCKT DI_AZ23C5V6W 1 2
\r
834 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10
\r
835 + CJO=102p VJ=0.750 M=0.330 TT=50.1n )
\r
836 .MODEL DR D ( IS=2.94f RS=24.5 N=3.00 )
\r
838 *SRC=AZ23C6V2;DI_AZ23C6V2;Diodes;Zener <=10V; 6.20V 0.300W Diodes Inc. Per node. Device contains two
\r
840 .SUBCKT DI_AZ23C6V2 1 2
\r
845 .MODEL DF D ( IS=19.9p RS=32.9 N=1.10
\r
846 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
\r
848 *SRC=AZ23C6V8;DI_AZ23C6V8;Diodes;Zener <=10V; 6.80V 0.300W Diodes Inc. Per node. Device contains two
\r
850 .SUBCKT DI_AZ23C6V8 1 2
\r
855 .MODEL DF D ( IS=18.2p RS=32.7 N=1.10
\r
856 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
\r
858 *SRC=AZ23C6V8W;DI_AZ23C6V8W;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. Per node. Device contains two
\r
860 .SUBCKT DI_AZ23C6V8W 1 2
\r
865 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10
\r
866 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
\r
867 .MODEL DR D ( IS=2.42f RS=3.45 N=2.23 )
\r
869 *SRC=AZ23C7V5;DI_AZ23C7V5;Diodes;Zener <=10V; 7.50V 0.300W Diodes Inc. Per node. Device contains two
\r
871 .SUBCKT DI_AZ23C7V5 1 2
\r
876 .MODEL DF D ( IS=16.5p RS=32.4 N=1.10
\r
877 + CJO=59.5p VJ=0.750 M=0.330 TT=50.1n )
\r
879 *SRC=AZ23C8V2;DI_AZ23C8V2;Diodes;Zener <=10V; 8.20V 0.300W Diodes Inc. Per node. Device contains two
\r
881 .SUBCKT DI_AZ23C8V2 1 2
\r
886 .MODEL DF D ( IS=15.1p RS=32.1 N=1.10
\r
887 + CJO=54.2p VJ=0.750 M=0.330 TT=50.1n )
\r
889 *SRC=AZ23C9V1;DI_AZ23C9V1;Diodes;Zener <=10V; 9.10V 0.300W Diodes Inc. Per node. Device contains two
\r
891 .SUBCKT DI_AZ23C9V1 1 2
\r
896 .MODEL DF D ( IS=13.6p RS=31.8 N=1.10
\r
897 + CJO=48.9p VJ=0.750 M=0.330 TT=50.1n )
\r
899 *SRC=BZT52C10;DI_BZT52C10;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. Zener
\r
901 .SUBCKT DI_BZT52C10 1 2
\r
906 .MODEL DF D ( IS=20.6p RS=1.22 N=1.10
\r
907 + CJO=45.6p VJ=0.750 M=0.330 TT=50.1n )
\r
908 .MODEL DR D ( IS=4.12f RS=4.60 N=2.97 )
\r
911 *SRC=BZT52C10S;DI_BZT52C10S;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER
\r
913 .SUBCKT DI_BZT52C10S 1 2
\r
918 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10
\r
919 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n )
\r
921 *SRC=BZT52C11;DI_BZT52C11;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C11 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 8.83
\r.MODEL DF D ( IS=18.7p RS=32.7 N=1.10
\r+ CJO=44.0p VJ=1.00 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=3.75f RS=4.60 N=2.97
\r
923 *SRC=BZT52C11S;DI_BZT52C11S;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER
\r
925 .SUBCKT DI_BZT52C11S 1 2
\r
930 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10
\r
931 + CJO=44.0p VJ=1.00 M=0.330 TT=50.1n )
\r
933 *SRC=BZT52C12;DI_BZT52C12;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C12 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 9.78
\r.MODEL DF D ( IS=17.2p RS=32.5 N=1.10
\r+ CJO=42.7p VJ=1.00 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=3.43f RS=9.46 N=3.00
\r
935 *SRC=BZT52C12S;DI_BZT52C12S;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER
\r
937 .SUBCKT DI_BZT52C12S 1 2
\r
942 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10
\r
943 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n )
\r
945 *SRC=BZT52C13;DI_BZT52C13;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. Zener
\r
947 .SUBCKT DI_BZT52C13 1 2
\r
952 .MODEL DF D ( IS=15.8p RS=1.24 N=1.10
\r
953 + CJO=51.5p VJ=1.00 M=0.330 TT=50.1n )
\r
954 .MODEL DR D ( IS=3.17f RS=1.26 N=0.814 )
\r
957 *SRC=BZT52C13S;DI_BZT52C13S;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER
\r
959 .SUBCKT DI_BZT52C13S 1 2
\r
964 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10
\r
965 + CJO=25.8p VJ=1.00 M=0.330 TT=50.1n )
\r
967 *SRC=BZT52C15;DI_BZT52C15;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C15 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 12.7
\r.MODEL DF D ( IS=13.7p RS=31.9 N=1.10
\r+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=2.75f RS=14.5 N=3.00
\r
969 *SRC=BZT52C15S;DI_BZT52C15S;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER
\r
971 .SUBCKT DI_BZT52C15S 1 2
\r
976 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10
\r
977 + CJO=25.5p VJ=1.00 M=0.330 TT=50.1n )
\r
979 *SRC=BZT52C16;DI_BZT52C16;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C16 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 13.7
\r.MODEL DF D ( IS=12.9p RS=31.7 N=1.10
\r+ CJO=31.4p VJ=1.00 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=2.58f RS=24.5 N=3.00
\r
981 *SRC=BZT52C16S;DI_BZT52C16S;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER
\r
983 .SUBCKT DI_BZT52C16S 1 2
\r
988 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10
\r
989 + CJO=25.4p VJ=1.00 M=0.330 TT=50.1n )
\r
991 *SRC=BZT52C18;DI_BZT52C18;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C18 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 15.6
\r.MODEL DF D ( IS=11.4p RS=31.3 N=1.10
\r+ CJO=27.7p VJ=1.00 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=2.29f RS=29.5 N=3.00
\r
993 **********************************************************************************************************************************
\r
994 *SRC=BZT52C18S;DI_BZT52C18S;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER
\r
996 .SUBCKT DI_BZT52C18S 1 2
\r
1001 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10
\r
1002 + CJO=25.3p VJ=1.00 M=0.330 TT=50.1n )
\r
1003 .MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 )
\r
1005 *********************************************************************************************************************************
\r
1007 *SRC=BZT52C20;DI_BZT52C20;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C20 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 17.6
\r.MODEL DF D ( IS=10.3p RS=31.0 N=1.10
\r+ CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=2.06f RS=39.5 N=3.00
\r
1009 *SRC=BZT52C20S;DI_BZT52C20S;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER
\r
1011 .SUBCKT DI_BZT52C20S 1 2
\r
1016 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10
\r
1017 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )
\r
1019 *SRC=BZT52C22;DI_BZT52C22;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C22 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 19.6
\r.MODEL DF D ( IS=9.36p RS=30.8 N=1.10
\r+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=1.87f RS=39.5 N=3.00
\r
1021 *SRC=BZT52C22S;DI_BZT52C22S;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER
\r
1023 .SUBCKT DI_BZT52C22S 1 2
\r
1028 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10
\r
1029 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
1031 *SRC=BZT52C24;DI_BZT52C24;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C24 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 21.5
\r.MODEL DF D ( IS=8.58p RS=30.5 N=1.10
\r+ CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=1.72f RS=54.5 N=3.00
\r
1033 *SRC=BZT52C24S;DI_BZT52C24S;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER
\r
1035 .SUBCKT DI_BZT52C24S 1 2
\r
1040 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10
\r
1041 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )
\r
1043 *SRC=BZT52C27;DI_BZT52C27;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C27 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 24.7
\r.MODEL DF D ( IS=7.63p RS=30.2 N=1.10
\r+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=1.53f RS=41.1 N=3.00
\r
1045 *SRC=BZT52C27S;DI_BZT52C27S;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER
\r
1047 .SUBCKT DI_BZT52C27S 1 2
\r
1052 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10
\r
1053 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )
\r
1055 *SRC=BZT52C2V0;DI_BZT52C2V0;Diodes;Zener <=10V; 2.00V 0.500W Diodes Inc.
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C2V0 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 0
\r.MODEL DF D ( IS=103p RS=37.6 N=1.10
\r+ CJO=516p VJ=0.750 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=20.6f RS=84.5 N=3.00
\r
1057 *SRC=BZT52C2V0S;DI_BZT52C2V0S;Diodes;Zener <=10V; 2.00V 0.200W Diodes Inc. 200 mW Zener
\r
1059 .SUBCKT DI_BZT52C2V0S 1 2
\r
1064 .MODEL DF D ( IS=41.2p RS=35.0 N=1.10
\r
1065 + CJO=503p VJ=0.750 M=0.330 TT=50.1n )
\r
1067 *SRC=BZT52C2V4;DI_BZT52C2V4;Diodes;Zener <=10V; 2.40V 0.500W Diodes Inc.
\r
1069 .SUBCKT DI_BZT52C2V4 1 2
\r
1074 .MODEL DF D ( IS=85.8p RS=37.1 N=1.10
\r
1075 + CJO=461p VJ=0.750 M=0.330 TT=50.1n )
\r
1076 .MODEL DR D ( IS=17.2f RS=84.5 N=3.00 )
\r
1079 *SRC=BZT52C2V4S;DI_BZT52C2V4S;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. 200 mW Zener
\r
1081 .SUBCKT DI_BZT52C2V4S 1 2
\r
1086 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10
\r
1087 + CJO=460p VJ=0.750 M=0.330 TT=50.1n )
\r
1089 *SRC=BZT52C2V7;DI_BZT52C2V7;Diodes;Zener <=10V; 2.70V 0.500W Diodes Inc. -
\r
1091 .SUBCKT DI_BZT52C2V7 1 2
\r
1096 .MODEL DF D ( IS=76.3p RS=36.7 N=1.10
\r
1097 + CJO=461p VJ=0.750 M=0.330 TT=50.1n )
\r
1098 .MODEL DR D ( IS=15.3f RS=84.5 N=3.00 )
\r
1101 *SRC=BZT52C2V7S;DI_BZT52C2V7S;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. 200 mW Zener
\r
1103 .SUBCKT DI_BZT52C2V7S 1 2
\r
1108 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10
\r
1109 + CJO=410p VJ=0.750 M=0.330 TT=50.1n )
\r
1111 *SRC=BZT52C30;DI_BZT52C30;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C30 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 27.7
\r.MODEL DF D ( IS=6.87p RS=29.9 N=1.10
\r+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=1.37f RS=41.1 N=3.00
\r
1113 *SRC=BZT52C30S;DI_BZT52C30S;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER
\r
1115 .SUBCKT DI_BZT52C30S 1 2
\r
1120 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10
\r
1121 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
\r
1123 *SRC=BZT52C33;DI_BZT52C33;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C33 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 30.7
\r.MODEL DF D ( IS=6.24p RS=29.6 N=1.10
\r+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=1.25f RS=41.1 N=3.00
\r
1125 *SRC=BZT52C33S;DI_BZT52C33S;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER
\r
1127 .SUBCKT DI_BZT52C33S 1 2
\r
1132 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10
\r
1133 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r
1135 *SRC=BZT52C36;DI_BZT52C36;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. Zener
\r
1137 .SUBCKT DI_BZT52C36 1 2
\r
1142 .MODEL DF D ( IS=5.72p RS=1.27 N=1.10
\r
1143 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
\r
1144 .MODEL DR D ( IS=1.14f RS=51.1 N=3.00 )
\r
1147 *SRC=BZT52C36S;DI_BZT52C36S;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER
\r
1149 .SUBCKT DI_BZT52C36S 1 2
\r
1154 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10
\r
1155 + CJO=17.3p VJ=1.00 M=0.330 TT=50.1n )
\r
1157 *SRC=BZT52C39;DI_BZT52C39;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C39 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 36.6
\r.MODEL DF D ( IS=5.28p RS=29.1 N=1.10
\r+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=1.06f RS=91.1 N=3.00
\r
1159 *SRC=BZT52C39S;DI_BZT52C39S;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER
\r
1161 .SUBCKT DI_BZT52C39S 1 2
\r
1166 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10
\r
1167 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r
1169 *SRC=BZT52C3V0;DI_BZT52C3V0;Diodes;Zener <=10V; 3.00V 0.500W Diodes Inc. -
\r
1171 .SUBCKT DI_BZT52C3V0 1 2
\r
1176 .MODEL DF D ( IS=68.7p RS=36.4 N=1.10
\r
1177 + CJO=384p VJ=0.750 M=0.330 TT=50.1n )
\r
1178 .MODEL DR D ( IS=13.7f RS=79.5 N=3.00 )
\r
1181 *SRC=BZT52C3V0S;DI_BZT52C3V0S;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. 200 mW Zener
\r
1183 .SUBCKT DI_BZT52C3V0S 1 2
\r
1188 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10
\r
1189 + CJO=403p VJ=0.750 M=0.330 TT=50.1n )
\r
1191 *SRC=BZT52C3V3;DI_BZT52C3V3;Diodes;Zener <=10V; 3.30V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C3V3 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 0.827
\r.MODEL DF D ( IS=62.4p RS=36.2 N=1.10
\r+ CJO=403p VJ=0.750 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=12.5f RS=79.5 N=3.00
\r
1193 *SRC=BZT52C3V3S;DI_BZT52C3V3S;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. ZENER
\r
1195 .SUBCKT DI_BZT52C3V3S 1 2
\r
1200 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10
\r
1201 + CJO=403p VJ=0.750 M=0.330 TT=50.1n )
\r
1203 *SRC=BZT52C3V6;DI_BZT52C3V6;Diodes;Zener <=10V; 3.60V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C3V6 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 1.15
\r.MODEL DF D ( IS=57.2p RS=35.9 N=1.10
\r+ CJO=390p VJ=0.750 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=11.4f RS=74.5 N=3.00
\r
1205 *SRC=BZT52C3V6S;DI_BZT52C3V6S;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. ZENER
\r
1207 .SUBCKT DI_BZT52C3V6S 1 2
\r
1212 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10
\r
1213 + CJO=390p VJ=0.750 M=0.330 TT=50.1n )
\r
1215 *SRC=BZT52C3V9;DI_BZT52C3V9;Diodes;Zener <=10V; 3.90V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C3V9 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 1.44
\r.MODEL DF D ( IS=52.8p RS=35.7 N=1.10
\r+ CJO=384p VJ=0.750 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=10.6f RS=74.5 N=3.00
\r
1217 ********************************************************************************************************************************
\r
1218 *SRC=BZT52C3V9S;DI_BZT52C3V9S;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER
\r
1220 .SUBCKT DI_BZT52C3V9S 1 2
\r
1225 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10
\r
1226 + CJO=384p VJ=0.750 M=0.330 TT=50.1n )
\r
1227 .MODEL DR D ( IS=4.23f RS=74.5 N=3.00 )
\r
1229 ********************************************************************************************************************************
\r
1231 *SRC=BZT52C43;DI_BZT52C43;Diodes;Zener 10V-50V; 43.0V 0.410W Diodes Inc. Zener
\r
1233 .SUBCKT DI_BZT52C43 1 2
\r
1238 .MODEL DF D ( IS=3.93p RS=1.51 N=1.10
\r
1239 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n )
\r
1240 .MODEL DR D ( IS=7.86e-016 RS=84.5 N=3.00 )
\r
1243 *SRC=BZT52C47;DI_BZT52C47;Diodes;Zener 10V-50V; 47.0V 0.410W Diodes Inc. Zener
\r
1245 .SUBCKT DI_BZT52C47 1 2
\r
1250 .MODEL DF D ( IS=3.59p RS=1.48 N=1.10
\r
1251 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n )
\r
1252 .MODEL DR D ( IS=7.19e-016 RS=84.5 N=3.00 )
\r
1255 *SRC=BZT52C4V3;DI_BZT52C4V3;Diodes;Zener <=10V; 4.30V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C4V3 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 1.83
\r.MODEL DF D ( IS=47.9p RS=35.4 N=1.10
\r+ CJO=370p VJ=0.750 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=9.58f RS=74.5 N=3.00
\r
1257 *SRC=BZT52C4V3S;DI_BZT52C4V3S;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. ZENER
\r
1259 .SUBCKT DI_BZT52C4V3S 1 2
\r
1264 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10
\r
1265 + CJO=370p VJ=0.750 M=0.330 TT=50.1n )
\r
1267 *SRC=BZT52C4V7;DI_BZT52C4V7;Diodes;Zener <=10V; 4.70V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C4V7 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 2.27
\r.MODEL DF D ( IS=43.8p RS=35.2 N=1.10
\r+ CJO=357p VJ=0.750 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=8.77f RS=64.5 N=3.00
\r
1269 *SRC=BZT52C4V7S;DI_BZT52C4V7S;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. ZENER
\r
1271 .SUBCKT DI_BZT52C4V7S 1 2
\r
1276 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10
\r
1277 + CJO=357p VJ=0.750 M=0.330 TT=50.1n )
\r
1279 *SRC=BZT52C51;DI_BZT52C51;Diodes;Zener >50V; 51.0V 0.410W Diodes Inc. Zener
\r
1281 .SUBCKT DI_BZT52C51 1 2
\r
1286 .MODEL DF D ( IS=3.31p RS=1.45 N=1.10
\r
1287 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n )
\r
1288 .MODEL DR D ( IS=6.62e-016 RS=84.5 N=3.00 )
\r
1291 *SRC=BZT52C5V1;DI_BZT52C5V1;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C5V1 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 2.77
\r.MODEL DF D ( IS=40.4p RS=34.9 N=1.10
\r+ CJO=145p VJ=0.750 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=8.08f RS=44.5 N=3.00
\r
1293 *SRC=BZT52C5V1S;DI_BZT52C5V1S;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER
\r
1295 .SUBCKT DI_BZT52C5V1S 1 2
\r
1300 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10
\r
1301 + CJO=145p VJ=0.750 M=0.330 TT=50.1n )
\r
1303 *SRC=BZT52C5V6;DI_BZT52C5V6;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C5V6 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 3.36
\r.MODEL DF D ( IS=36.8p RS=34.7 N=1.10
\r+ CJO=99.2p VJ=0.750 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=7.36f RS=24.5 N=3.00
\r
1305 *SRC=BZT52C5V6S;DI_BZT52C5V6S;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER
\r
1307 .SUBCKT DI_BZT52C5V6S 1 2
\r
1312 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10
\r
1313 + CJO=99.2p VJ=0.750 M=0.330 TT=50.1n )
\r
1315 *SRC=BZT52C6V2;DI_BZT52C6V2;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C6V2 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 5.14
\r.MODEL DF D ( IS=33.2p RS=34.4 N=1.10
\r+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=6.65f RS=2.30 N=1.49
\r
1317 *SRC=BZT52C6V2S;DI_BZT52C6V2S;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER
\r
1319 .SUBCKT DI_BZT52C6V2S 1 2
\r
1324 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10
\r
1325 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
\r
1327 *SRC=BZT52C6V8;DI_BZT52C6V8;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C6V8 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 5.20
\r.MODEL DF D ( IS=30.3p RS=34.1 N=1.10
\r+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=6.06f RS=3.45 N=2.23
\r
1329 *SRC=BZT52C6V8S;DI_BZT52C6V8S;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER
\r
1331 .SUBCKT DI_BZT52C6V8S 1 2
\r
1336 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10
\r
1337 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
\r
1339 *SRC=BZT52C7V5;DI_BZT52C7V5;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc.
\r-
\r*SYM=HZEN
\r.SUBCKT DI_BZT52C7V5 1 2
\r* Terminals A K
\rD1 1 2 DF
\rDZ 3 1 DR
\rVZ 2 3 5.89
\r.MODEL DF D ( IS=27.5p RS=33.8 N=1.10
\r+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
\r.MODEL DR D ( IS=5.49f RS=3.45 N=2.23
\r
1341 *SRC=BZT52C7V5S;DI_BZT52C7V5S;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER
\r
1343 .SUBCKT DI_BZT52C7V5S 1 2
\r
1348 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10
\r
1349 + CJO=54.2p VJ=0.750 M=0.330 TT=50.1n )
\r
1351 *SRC=BZT52C8V2;DI_BZT52C8V2;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. -
\r
1353 .SUBCKT DI_BZT52C8V2 1 2
\r
1358 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10
\r
1359 + CJO=38.4p VJ=0.750 M=0.330 TT=50.1n )
\r
1360 .MODEL DR D ( IS=5.02f RS=3.45 N=2.23 )
\r
1363 *SRC=BZT52C8V2S;DI_BZT52C8V2S;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER
\r
1365 .SUBCKT DI_BZT52C8V2S 1 2
\r
1370 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10
\r
1371 + CJO=51.6p VJ=0.750 M=0.330 TT=50.1n )
\r
1373 *SRC=BZT52C9V1;DI_BZT52C9V1;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. -
\r
1375 .SUBCKT DI_BZT52C9V1 1 2
\r
1380 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10
\r
1381 + CJO=35.3p VJ=0.750 M=0.330 TT=50.1n )
\r
1382 .MODEL DR D ( IS=4.53f RS=3.45 N=2.23 )
\r
1385 *SRC=BZT52C9V1S;DI_BZT52C9V1S;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER
\r
1387 .SUBCKT DI_BZT52C9V1S 1 2
\r
1392 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10
\r
1393 + CJO=48.9p VJ=0.750 M=0.330 TT=50.1n )
\r
1395 *SRC=BZX84C10;DI_BZX84C10;Diodes;Zener <=10V; 10.0V 0.350W Diodes Inc.
\r
1397 .SUBCKT DI_BZX84C10 1 2
\r
1402 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10
\r
1403 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n )
\r
1404 .MODEL DR D ( IS=2.88f RS=4.60 N=2.97 )
\r
1407 *SRC=BZX84C10S;DI_BZX84C10S;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
1409 .SUBCKT DI_BZX84C10S 1 2
\r
1414 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10
\r
1415 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n )
\r
1417 *SRC=BZX84C10T;DI_BZX84C10T;Diodes;Zener <=10V; 10.0V 0.150W Diodes Inc. ZENER
\r
1419 .SUBCKT DI_BZX84C10T 1 2
\r
1424 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10
\r
1425 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n )
\r
1427 *SRC=BZX84C10TS;DI_BZX84C10TS;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
1429 .SUBCKT DI_BZX84C10TS 1 2
\r
1434 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10
\r
1435 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n )
\r
1437 *SRC=BZX84C10W;DI_BZX84C10W;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER
\r
1439 .SUBCKT DI_BZX84C10W 1 2
\r
1444 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10
\r
1445 + CJO=24.1p VJ=0.750 M=0.330 TT=50.1n )
\r
1447 *SRC=BZX84C11;DI_BZX84C11;Diodes;Zener 10V-50V; 11.0V 0.350W Diodes Inc.
\r
1449 .SUBCKT DI_BZX84C11 1 2
\r
1454 .MODEL DF D ( IS=13.1p RS=31.7 N=1.10
\r
1455 + CJO=45.2p VJ=1.00 M=0.330 TT=50.1n )
\r
1456 .MODEL DR D ( IS=2.62f RS=4.60 N=2.97 )
\r
1459 *SRC=BZX84C11S;DI_BZX84C11S;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
1461 .SUBCKT DI_BZX84C11S 1 2
\r
1466 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10
\r
1467 + CJO=45.1p VJ=1.00 M=0.330 TT=50.1n )
\r
1469 *SRC=BZX84C11T;DI_BZX84C11T;Diodes;Zener 10V-50V; 11.0V 0.150W Diodes Inc. ZENER
\r
1471 .SUBCKT DI_BZX84C11T 1 2
\r
1476 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10
\r
1477 + CJO=45.1p VJ=1.00 M=0.330 TT=50.1n )
\r
1479 *SRC=BZX84C11TS;DI_BZX84C11TS;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
1481 .SUBCKT DI_BZX84C11TS 1 2
\r
1486 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10
\r
1487 + CJO=45.1p VJ=1.00 M=0.330 TT=50.1n )
\r
1489 *SRC=BZX84C11W;DI_BZX84C11W;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER
\r
1491 .SUBCKT DI_BZX84C11W 1 2
\r
1496 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10
\r
1497 + CJO=45.1p VJ=1.00 M=0.330 TT=50.1n )
\r
1499 *SRC=BZX84C12;DI_BZX84C12;Diodes;Zener 10V-50V; 12.0V 0.350W Diodes Inc.
\r
1501 .SUBCKT DI_BZX84C12 1 2
\r
1506 .MODEL DF D ( IS=12.0p RS=31.5 N=1.10
\r
1507 + CJO=42.7p VJ=1.00 M=0.330 TT=50.1n )
\r
1508 .MODEL DR D ( IS=2.40f RS=9.46 N=3.00 )
\r
1511 *SRC=BZX84C12S;DI_BZX84C12S;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
1513 .SUBCKT DI_BZX84C12S 1 2
\r
1518 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10
\r
1519 + CJO=42.6p VJ=1.00 M=0.330 TT=50.1n )
\r
1521 *SRC=BZX84C12T;DI_BZX84C12T;Diodes;Zener 10V-50V; 12.0V 0.150W Diodes Inc. ZENER
\r
1523 .SUBCKT DI_BZX84C12T 1 2
\r
1528 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10
\r
1529 + CJO=42.6p VJ=1.00 M=0.330 TT=50.1n )
\r
1531 *SRC=BZX84C12TS;DI_BZX84C12TS;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
1533 .SUBCKT DI_BZX84C12TS 1 2
\r
1538 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10
\r
1539 + CJO=42.6p VJ=1.00 M=0.330 TT=50.1n )
\r
1541 *SRC=BZX84C12W;DI_BZX84C12W;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER
\r
1543 .SUBCKT DI_BZX84C12W 1 2
\r
1548 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10
\r
1549 + CJO=42.6p VJ=1.00 M=0.330 TT=50.1n )
\r
1551 *SRC=BZX84C13;DI_BZX84C13;Diodes;Zener 10V-50V; 13.0V 0.350W Diodes Inc.
\r
1553 .SUBCKT DI_BZX84C13 1 2
\r
1558 .MODEL DF D ( IS=11.1p RS=31.3 N=1.10
\r
1559 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )
\r
1560 .MODEL DR D ( IS=2.22f RS=14.5 N=3.00 )
\r
1563 *SRC=BZX84C13S;DI_BZX84C13S;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
1565 .SUBCKT DI_BZX84C13S 1 2
\r
1570 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10
\r
1571 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )
\r
1573 *SRC=BZX84C13T;DI_BZX84C13T;Diodes;Zener 10V-50V; 13.0V 0.150W Diodes Inc. ZENER
\r
1575 .SUBCKT DI_BZX84C13T 1 2
\r
1580 .MODEL DF D ( IS=4.75p RS=28.8 N=1.10
\r
1581 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )
\r
1583 *SRC=BZX84C13TS;DI_BZX84C13TS;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
1585 .SUBCKT DI_BZX84C13TS 1 2
\r
1590 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10
\r
1591 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )
\r
1593 *SRC=BZX84C13W;DI_BZX84C13W;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER
\r
1595 .SUBCKT DI_BZX84C13W 1 2
\r
1600 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10
\r
1601 + CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )
\r
1603 *SRC=BZX84C15;DI_BZX84C15;Diodes;Zener 10V-50V; 15.0V 0.350W Diodes Inc.
\r
1605 .SUBCKT DI_BZX84C15 1 2
\r
1610 .MODEL DF D ( IS=9.61p RS=30.8 N=1.10
\r
1611 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n )
\r
1612 .MODEL DR D ( IS=1.92f RS=14.5 N=3.00 )
\r
1615 *SRC=BZX84C15S;DI_BZX84C15S;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
1617 .SUBCKT DI_BZX84C15S 1 2
\r
1622 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10
\r
1623 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n )
\r
1625 *SRC=BZX84C15T;DI_BZX84C15T;Diodes;Zener 10V-50V; 15.0V 0.150W Diodes Inc. ZENER
\r
1627 .SUBCKT DI_BZX84C15T 1 2
\r
1632 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10
\r
1633 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n )
\r
1635 *SRC=BZX84C15TS;DI_BZX84C15TS;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
1637 .SUBCKT DI_BZX84C15TS 1 2
\r
1642 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10
\r
1643 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n )
\r
1645 *SRC=BZX84C15W;DI_BZX84C15W;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER
\r
1647 .SUBCKT DI_BZX84C15W 1 2
\r
1652 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10
\r
1653 + CJO=37.2p VJ=1.00 M=0.330 TT=50.1n )
\r
1655 *SRC=BZX84C16;DI_BZX84C16;Diodes;Zener 10V-50V; 16.0V 0.350W Diodes Inc.
\r
1657 .SUBCKT DI_BZX84C16 1 2
\r
1662 .MODEL DF D ( IS=9.01p RS=30.7 N=1.10
\r
1663 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n )
\r
1664 .MODEL DR D ( IS=1.80f RS=24.5 N=3.00 )
\r
1667 *SRC=BZX84C16S;DI_BZX84C16S;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
1669 .SUBCKT DI_BZX84C16S 1 2
\r
1674 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10
\r
1675 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n )
\r
1677 *SRC=BZX84C16T;DI_BZX84C16T;Diodes;Zener 10V-50V; 16.0V 0.150W Diodes Inc. ZENER
\r
1679 .SUBCKT DI_BZX84C16T 1 2
\r
1684 .MODEL DF D ( IS=3.86p RS=28.2 N=1.10
\r
1685 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n )
\r
1687 *SRC=BZX84C16TS;DI_BZX84C16TS;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
1689 .SUBCKT DI_BZX84C16TS 1 2
\r
1694 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10
\r
1695 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n )
\r
1697 *SRC=BZX84C16W;DI_BZX84C16W;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER
\r
1699 .SUBCKT DI_BZX84C16W 1 2
\r
1704 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10
\r
1705 + CJO=35.8p VJ=1.00 M=0.330 TT=50.1n )
\r
1707 *SRC=BZX84C18;DI_BZX84C18;Diodes;Zener 10V-50V; 18.0V 0.350W Diodes Inc.
\r
1709 .SUBCKT DI_BZX84C18 1 2
\r
1714 .MODEL DF D ( IS=8.01p RS=30.3 N=1.10
\r
1715 + CJO=33.5p VJ=1.00 M=0.330 TT=50.1n )
\r
1716 .MODEL DR D ( IS=1.60f RS=29.5 N=3.00 )
\r
1719 *SRC=BZX84C18S;DI_BZX84C18S;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
1721 .SUBCKT DI_BZX84C18S 1 2
\r
1726 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10
\r
1727 + CJO=33.4p VJ=1.00 M=0.330 TT=50.1n )
\r
1729 *SRC=BZX84C18T;DI_BZX84C18T;Diodes;Zener 10V-50V; 18.0V 0.150W Diodes Inc. ZENER
\r
1731 .SUBCKT DI_BZX84C18T 1 2
\r
1736 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10
\r
1737 + CJO=33.4p VJ=1.00 M=0.330 TT=50.1n )
\r
1739 *SRC=BZX84C18TS;DI_BZX84C18TS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
1741 .SUBCKT DI_BZX84C18TS 1 2
\r
1746 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10
\r
1747 + CJO=33.4p VJ=1.00 M=0.330 TT=50.1n )
\r
1749 *SRC=BZX84C18W;DI_BZX84C18W;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER
\r
1751 .SUBCKT DI_BZX84C18W 1 2
\r
1756 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10
\r
1757 + CJO=33.4p VJ=1.00 M=0.330 TT=50.1n )
\r
1759 *SRC=BZX84C20;DI_BZX84C20;Diodes;Zener 10V-50V; 20.0V 0.350W Diodes Inc.
\r
1761 .SUBCKT DI_BZX84C20 1 2
\r
1766 .MODEL DF D ( IS=7.21p RS=30.0 N=1.10
\r
1767 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n )
\r
1768 .MODEL DR D ( IS=1.44f RS=39.5 N=3.00 )
\r
1771 *SRC=BZX84C20S;DI_BZX84C20S;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
1773 .SUBCKT DI_BZX84C20S 1 2
\r
1778 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10
\r
1779 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n )
\r
1781 *SRC=BZX84C20T;DI_BZX84C20T;Diodes;Zener 10V-50V; 20.0V 0.150W Diodes Inc. ZENER
\r
1783 .SUBCKT DI_BZX84C20T 1 2
\r
1788 .MODEL DF D ( IS=3.09p RS=27.6 N=1.10
\r
1789 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n )
\r
1791 *SRC=BZX84C20TS;DI_BZX84C20TS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
1793 .SUBCKT DI_BZX84C20TS 1 2
\r
1798 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10
\r
1799 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n )
\r
1801 *SRC=BZX84C20W;DI_BZX84C20W;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER
\r
1803 .SUBCKT DI_BZX84C20W 1 2
\r
1808 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10
\r
1809 + CJO=31.6p VJ=1.00 M=0.330 TT=50.1n )
\r
1811 *SRC=BZX84C22;DI_BZX84C22;Diodes;Zener 10V-50V; 22.0V 0.350W Diodes Inc.
\r
1813 .SUBCKT DI_BZX84C22 1 2
\r
1818 .MODEL DF D ( IS=6.55p RS=29.8 N=1.10
\r
1819 + CJO=30.1p VJ=1.00 M=0.330 TT=50.1n )
\r
1820 .MODEL DR D ( IS=1.31f RS=39.5 N=3.00 )
\r
1823 *SRC=BZX84C22S;DI_BZX84C22S;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
1825 .SUBCKT DI_BZX84C22S 1 2
\r
1830 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10
\r
1831 + CJO=30.0p VJ=1.00 M=0.330 TT=50.1n )
\r
1833 *SRC=BZX84C22T;DI_BZX84C22T;Diodes;Zener 10V-50V; 22.0V 0.150W Diodes Inc. ZENER
\r
1835 .SUBCKT DI_BZX84C22T 1 2
\r
1840 .MODEL DF D ( IS=2.81p RS=27.3 N=1.10
\r
1841 + CJO=30.0p VJ=1.00 M=0.330 TT=50.1n )
\r
1843 *SRC=BZX84C22TS;DI_BZX84C22TS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
1845 .SUBCKT DI_BZX84C22TS 1 2
\r
1850 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10
\r
1851 + CJO=30.0p VJ=1.00 M=0.330 TT=50.1n )
\r
1853 *SRC=BZX84C22W;DI_BZX84C22W;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER
\r
1855 .SUBCKT DI_BZX84C22W 1 2
\r
1860 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10
\r
1861 + CJO=30.0p VJ=1.00 M=0.330 TT=50.1n )
\r
1863 *SRC=BZX84C24;DI_BZX84C24;Diodes;Zener 10V-50V; 24.0V 0.350W Diodes Inc.
\r
1865 .SUBCKT DI_BZX84C24 1 2
\r
1870 .MODEL DF D ( IS=6.01p RS=29.5 N=1.10
\r
1871 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )
\r
1872 .MODEL DR D ( IS=1.20f RS=54.5 N=3.00 )
\r
1875 *SRC=BZX84C24S;DI_BZX84C24S;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
1877 .SUBCKT DI_BZX84C24S 1 2
\r
1882 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10
\r
1883 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )
\r
1885 *SRC=BZX84C24T;DI_BZX84C24T;Diodes;Zener 10V-50V; 24.0V 0.150W Diodes Inc. ZENER
\r
1887 .SUBCKT DI_BZX84C24T 1 2
\r
1892 .MODEL DF D ( IS=2.57p RS=27.1 N=1.10
\r
1893 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )
\r
1895 *SRC=BZX84C24TS;DI_BZX84C24TS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
1897 .SUBCKT DI_BZX84C24TS 1 2
\r
1902 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10
\r
1903 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )
\r
1905 *SRC=BZX84C24W;DI_BZX84C24W;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER
\r
1907 .SUBCKT DI_BZX84C24W 1 2
\r
1912 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10
\r
1913 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )
\r
1915 *SRC=BZX84C27;DI_BZX84C27;Diodes;Zener 10V-50V; 27.0V 0.350W Diodes Inc.
\r
1917 .SUBCKT DI_BZX84C27 1 2
\r
1922 .MODEL DF D ( IS=5.34p RS=29.2 N=1.10
\r
1923 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n )
\r
1924 .MODEL DR D ( IS=1.07f RS=64.5 N=3.00 )
\r
1927 *SRC=BZX84C27S;DI_BZX84C27S;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
1929 .SUBCKT DI_BZX84C27S 1 2
\r
1934 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10
\r
1935 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n )
\r
1937 *SRC=BZX84C27T;DI_BZX84C27T;Diodes;Zener 10V-50V; 27.0V 0.150W Diodes Inc. ZENER
\r
1939 .SUBCKT DI_BZX84C27T 1 2
\r
1944 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10
\r
1945 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n )
\r
1947 *SRC=BZX84C27TS;DI_BZX84C27TS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
1949 .SUBCKT DI_BZX84C27TS 1 2
\r
1954 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10
\r
1955 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n )
\r
1957 *SRC=BZX84C27W;DI_BZX84C27W;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER
\r
1959 .SUBCKT DI_BZX84C27W 1 2
\r
1964 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10
\r
1965 + CJO=27.3p VJ=1.00 M=0.330 TT=50.1n )
\r
1967 *SRC=BZX84C2V4;DI_BZX84C2V4;Diodes;Zener <=10V; 2.40V 0.350W Diodes Inc.
\r
1969 .SUBCKT DI_BZX84C2V4 1 2
\r
1974 .MODEL DF D ( IS=60.1p RS=36.1 N=1.10
\r
1975 + CJO=205p VJ=0.750 M=0.330 TT=50.1n )
\r
1976 .MODEL DR D ( IS=12.0f RS=84.5 N=3.00 )
\r
1979 *SRC=BZX84C2V4S;DI_BZX84C2V4S;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
1981 .SUBCKT DI_BZX84C2V4S 1 2
\r
1986 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10
\r
1987 + CJO=205p VJ=0.750 M=0.330 TT=50.1n )
\r
1989 *SRC=BZX84C2V4T;DI_BZX84C2V4T;Diodes;Zener <=10V; 2.40V 0.150W Diodes Inc. ZENER
\r
1991 .SUBCKT DI_BZX84C2V4T 1 2
\r
1996 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10
\r
1997 + CJO=205p VJ=0.750 M=0.330 TT=50.1n )
\r
1999 *SRC=BZX84C2V4TS;DI_BZX84C2V4TS;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
2001 .SUBCKT DI_BZX84C2V4TS 1 2
\r
2006 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10
\r
2007 + CJO=205p VJ=0.750 M=0.330 TT=50.1n )
\r
2009 *SRC=BZX84C2V4W;DI_BZX84C2V4W;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. ZENER
\r
2011 .SUBCKT DI_BZX84C2V4W 1 2
\r
2016 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10
\r
2017 + CJO=205p VJ=0.750 M=0.330 TT=50.1n )
\r
2019 *SRC=BZX84C2V7;DI_BZX84C2V7;Diodes;Zener <=10V; 2.70V 0.350W Diodes Inc.
\r
2021 .SUBCKT DI_BZX84C2V7 1 2
\r
2026 .MODEL DF D ( IS=53.4p RS=35.7 N=1.10
\r
2027 + CJO=172p VJ=0.750 M=0.330 TT=50.1n )
\r
2028 .MODEL DR D ( IS=10.7f RS=84.5 N=3.00 )
\r
2031 *SRC=BZX84C2V7S;DI_BZX84C2V7S;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
2033 .SUBCKT DI_BZX84C2V7S 1 2
\r
2038 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10
\r
2039 + CJO=172p VJ=0.750 M=0.330 TT=50.1n )
\r
2041 *SRC=BZX84C2V7T;DI_BZX84C2V7T;Diodes;Zener <=10V; 2.70V 0.150W Diodes Inc. ZENER
\r
2043 .SUBCKT DI_BZX84C2V7T 1 2
\r
2048 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10
\r
2049 + CJO=172p VJ=0.750 M=0.330 TT=50.1n )
\r
2051 *SRC=BZX84C2V7TS;DI_BZX84C2V7TS;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
2053 .SUBCKT DI_BZX84C2V7TS 1 2
\r
2058 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10
\r
2059 + CJO=172p VJ=0.750 M=0.330 TT=50.1n )
\r
2061 *SRC=BZX84C2V7W;DI_BZX84C2V7W;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. ZENER
\r
2063 .SUBCKT DI_BZX84C2V7W 1 2
\r
2068 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10
\r
2069 + CJO=172p VJ=0.750 M=0.330 TT=50.1n )
\r
2071 *SRC=BZX84C30;DI_BZX84C30;Diodes;Zener 10V-50V; 30.0V 0.350W Diodes Inc.
\r
2073 .SUBCKT DI_BZX84C30 1 2
\r
2078 .MODEL DF D ( IS=4.81p RS=28.9 N=1.10
\r
2079 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )
\r
2080 .MODEL DR D ( IS=9.61e-016 RS=64.5 N=3.00 )
\r
2083 *SRC=BZX84C30S;DI_BZX84C30S;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
2085 .SUBCKT DI_BZX84C30S 1 2
\r
2090 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10
\r
2091 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )
\r
2093 *SRC=BZX84C30T;DI_BZX84C30T;Diodes;Zener 10V-50V; 30.0V 0.150W Diodes Inc. ZENER
\r
2095 .SUBCKT DI_BZX84C30T 1 2
\r
2100 .MODEL DF D ( IS=2.06p RS=26.5 N=1.10
\r
2101 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )
\r
2103 *SRC=BZX84C30TS;DI_BZX84C30TS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
2105 .SUBCKT DI_BZX84C30TS 1 2
\r
2110 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10
\r
2111 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )
\r
2113 *SRC=BZX84C30W;DI_BZX84C30W;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER
\r
2115 .SUBCKT DI_BZX84C30W 1 2
\r
2120 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10
\r
2121 + CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )
\r
2123 *SRC=BZX84C33;DI_BZX84C33;Diodes;Zener 10V-50V; 33.0V 0.350W Diodes Inc.
\r
2125 .SUBCKT DI_BZX84C33 1 2
\r
2130 .MODEL DF D ( IS=4.37p RS=28.6 N=1.10
\r
2131 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
\r
2132 .MODEL DR D ( IS=8.74e-016 RS=64.5 N=3.00 )
\r
2135 *SRC=BZX84C33S;DI_BZX84C33S;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
2137 .SUBCKT DI_BZX84C33S 1 2
\r
2142 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10
\r
2143 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
\r
2145 *SRC=BZX84C33T;DI_BZX84C33T;Diodes;Zener 10V-50V; 33.0V 0.150W Diodes Inc. ZENER
\r
2147 .SUBCKT DI_BZX84C33T 1 2
\r
2152 .MODEL DF D ( IS=1.87p RS=26.2 N=1.10
\r
2153 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
\r
2155 *SRC=BZX84C33TS;DI_BZX84C33TS;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
2157 .SUBCKT DI_BZX84C33TS 1 2
\r
2162 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10
\r
2163 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
\r
2165 *SRC=BZX84C33W;DI_BZX84C33W;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER
\r
2167 .SUBCKT DI_BZX84C33W 1 2
\r
2172 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10
\r
2173 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
\r
2175 *SRC=BZX84C36;DI_BZX84C36;Diodes;Zener 10V-50V; 36.0V 0.350W Diodes Inc.
\r
2177 .SUBCKT DI_BZX84C36 1 2
\r
2182 .MODEL DF D ( IS=4.01p RS=28.4 N=1.10
\r
2183 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n )
\r
2184 .MODEL DR D ( IS=8.01e-016 RS=74.5 N=3.00 )
\r
2187 *SRC=BZX84C36S;DI_BZX84C36S;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
2189 .SUBCKT DI_BZX84C36S 1 2
\r
2194 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10
\r
2195 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n )
\r
2197 *SRC=BZX84C36T;DI_BZX84C36T;Diodes;Zener >50V; 536V 0.150W Diodes Inc. ZENER
\r
2199 .SUBCKT DI_BZX84C36T 1 2
\r
2204 .MODEL DF D ( IS=115f RS=18.2 N=1.10
\r
2205 + CJO=24.1p VJ=1.00 M=0.330 TT=50.1n )
\r
2207 *SRC=BZX84C36TS;DI_BZX84C36TS;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
2209 .SUBCKT DI_BZX84C36TS 1 2
\r
2214 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10
\r
2215 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n )
\r
2217 *SRC=BZX84C36W;DI_BZX84C36W;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER
\r
2219 .SUBCKT DI_BZX84C36W 1 2
\r
2224 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10
\r
2225 + CJO=24.2p VJ=1.00 M=0.330 TT=50.1n )
\r
2227 *SRC=BZX84C39;DI_BZX84C39;Diodes;Zener 10V-50V; 39.0V 0.350W Diodes Inc.
\r
2229 .SUBCKT DI_BZX84C39 1 2
\r
2234 .MODEL DF D ( IS=3.70p RS=28.1 N=1.10
\r
2235 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n )
\r
2236 .MODEL DR D ( IS=7.39e-016 RS=114 N=3.00 )
\r
2239 *SRC=BZX84C39S;DI_BZX84C39S;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
2241 .SUBCKT DI_BZX84C39S 1 2
\r
2246 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10
\r
2247 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n )
\r
2249 *SRC=BZX84C39T;DI_BZX84C39T;Diodes;Zener 10V-50V; 39.0V 0.150W Diodes Inc. ZENER
\r\r
2251 .SUBCKT DI_BZX84C39T 1 2
\r\r
2256 .MODEL DF D ( IS=1.58p RS=25.7 N=1.10
\r\r
2257 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n )
\r
2259 *SRC=BZX84C39TS;DI_BZX84C39TS;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
2261 .SUBCKT DI_BZX84C39TS 1 2
\r
2266 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10
\r
2267 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n )
\r
2269 *SRC=BZX84C39W;DI_BZX84C39W;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER
\r
2271 .SUBCKT DI_BZX84C39W 1 2
\r
2276 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10
\r
2277 + CJO=23.5p VJ=1.00 M=0.330 TT=50.1n )
\r
2279 *SRC=BZX84C3V0;DI_BZX84C3V0;Diodes;Zener <=10V; 3.00V 0.350W Diodes Inc.
\r
2281 .SUBCKT DI_BZX84C3V0 1 2
\r
2286 .MODEL DF D ( IS=48.1p RS=35.4 N=1.10
\r
2287 + CJO=147p VJ=0.750 M=0.330 TT=50.1n )
\r
2288 .MODEL DR D ( IS=9.61f RS=79.5 N=3.00 )
\r
2291 *SRC=BZX84C3V0S;DI_BZX84C3V0S;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
2293 .SUBCKT DI_BZX84C3V0S 1 2
\r
2298 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10
\r
2299 + CJO=147p VJ=0.750 M=0.330 TT=50.1n )
\r
2301 *SRC=BZX84C3V0T;DI_BZX84C3V0T;Diodes;Zener <=10V; 3.00V 0.150W Diodes Inc. ZENER
\r
2303 .SUBCKT DI_BZX84C3V0T 1 2
\r
2308 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10
\r
2309 + CJO=147p VJ=0.750 M=0.330 TT=50.1n )
\r
2311 *SRC=BZX84C3V0TS;DI_BZX84C3V0TS;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
2313 .SUBCKT DI_BZX84C3V0TS 1 2
\r
2318 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10
\r
2319 + CJO=147p VJ=0.750 M=0.330 TT=50.1n )
\r
2321 *SRC=BZX84C3V0W;DI_BZX84C3V0W;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. ZENER
\r
2323 .SUBCKT DI_BZX84C3V0W 1 2
\r
2328 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10
\r
2329 + CJO=147p VJ=0.750 M=0.330 TT=50.1n )
\r
2331 *SRC=BZX84C3V3;DI_BZX84C3V3;Diodes;Zener <=10V; 3.30V 0.350W Diodes Inc.
\r
2333 .SUBCKT DI_BZX84C3V3 1 2
\r
2338 .MODEL DF D ( IS=43.7p RS=35.2 N=1.10
\r
2339 + CJO=127p VJ=0.750 M=0.330 TT=50.1n )
\r
2340 .MODEL DR D ( IS=8.74f RS=79.5 N=3.00 )
\r
2343 *SRC=BZX84C3V3S;DI_BZX84C3V3S;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
2345 .SUBCKT DI_BZX84C3V3S 1 2
\r
2350 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10
\r
2351 + CJO=127p VJ=0.750 M=0.330 TT=50.1n )
\r
2353 *SRC=BZX84C3V3T;DI_BZX84C3V3T;Diodes;Zener <=10V; 3.30V 0.150W Diodes Inc. ZENER
\r
2355 .SUBCKT DI_BZX84C3V3T 1 2
\r
2360 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10
\r
2361 + CJO=127p VJ=0.750 M=0.330 TT=50.1n )
\r
2363 *SRC=BZX84C3V3TS;DI_BZX84C3V3TS;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
2365 .SUBCKT DI_BZX84C3V3TS 1 2
\r
2370 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10
\r
2371 + CJO=127p VJ=0.750 M=0.330 TT=50.1n )
\r
2373 *SRC=BZX84C3V3W;DI_BZX84C3V3W;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. ZENER
\r
2375 .SUBCKT DI_BZX84C3V3W 1 2
\r
2380 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10
\r
2381 + CJO=127p VJ=0.750 M=0.330 TT=50.1n )
\r
2383 *SRC=BZX84C3V6;DI_BZX84C3V6;Diodes;Zener <=10V; 3.60V 0.350W Diodes Inc.
\r
2385 .SUBCKT DI_BZX84C3V6 1 2
\r
2390 .MODEL DF D ( IS=40.1p RS=34.9 N=1.10
\r
2391 + CJO=112p VJ=0.750 M=0.330 TT=50.1n )
\r
2392 .MODEL DR D ( IS=8.01f RS=74.5 N=3.00 )
\r
2395 *SRC=BZX84C3V6S;DI_BZX84C3V6S;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
2397 .SUBCKT DI_BZX84C3V6S 1 2
\r
2402 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10
\r
2403 + CJO=112p VJ=0.750 M=0.330 TT=50.1n )
\r
2405 *SRC=BZX84C3V6T;DI_BZX84C3V6T;Diodes;Zener <=10V; 3.60V 0.150W Diodes Inc. ZENER
\r
2407 .SUBCKT DI_BZX84C3V6T 1 2
\r
2412 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10
\r
2413 + CJO=112p VJ=0.750 M=0.330 TT=50.1n )
\r
2415 *SRC=BZX84C3V6TS;DI_BZX84C3V6TS;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
2417 .SUBCKT DI_BZX84C3V6TS 1 2
\r
2422 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10
\r
2423 + CJO=112p VJ=0.750 M=0.330 TT=50.1n )
\r
2425 *SRC=BZX84C3V6W;DI_BZX84C3V6W;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. ZENER
\r
2427 .SUBCKT DI_BZX84C3V6W 1 2
\r
2432 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10
\r
2433 + CJO=112p VJ=0.750 M=0.330 TT=50.1n )
\r
2435 *SRC=BZX84C3V9;DI_BZX84C3V9;Diodes;Zener <=10V; 3.90V 0.350W Diodes Inc.
\r
2437 .SUBCKT DI_BZX84C3V9 1 2
\r
2442 .MODEL DF D ( IS=37.0p RS=34.7 N=1.10
\r
2443 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n )
\r
2444 .MODEL DR D ( IS=7.39f RS=74.5 N=3.00 )
\r
2447 *SRC=BZX84C3V9S;DI_BZX84C3V9S;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
2449 .SUBCKT DI_BZX84C3V9S 1 2
\r
2454 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10
\r
2455 + CJO=94.1p VJ=0.750 M=0.330 TT=50.1n )
\r
2457 *SRC=BZX84C3V9T;DI_BZX84C3V9T;Diodes;Zener <=10V; 3.90V 0.150W Diodes Inc. ZENER
\r
2459 .SUBCKT DI_BZX84C3V9T 1 2
\r
2464 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10
\r
2465 + CJO=94.1p VJ=0.750 M=0.330 TT=50.1n )
\r
2467 *SRC=BZX84C3V9TS;DI_BZX84C3V9TS;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
2469 .SUBCKT DI_BZX84C3V9TS 1 2
\r
2474 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10
\r
2475 + CJO=94.1p VJ=0.750 M=0.330 TT=50.1n )
\r
2477 *SRC=BZX84C3V9W;DI_BZX84C3V9W;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER
\r
2479 .SUBCKT DI_BZX84C3V9W 1 2
\r
2484 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10
\r
2485 + CJO=94.1p VJ=0.750 M=0.330 TT=50.1n )
\r
2487 *SRC=BZX84C43;DI_BZX84C43;Diodes;Zener 10V-50V; 43.0V 0.350W Diodes Inc.
\r
2489 .SUBCKT DI_BZX84C43 1 2
\r
2494 .MODEL DF D ( IS=3.35p RS=27.8 N=1.10
\r
2495 + CJO=22.7p VJ=1.00 M=0.330 TT=50.1n )
\r
2496 .MODEL DR D ( IS=6.71e-016 RS=134 N=3.00 )
\r
2499 *SRC=BZX84C47;DI_BZX84C47;Diodes;Zener 10V-50V; 47.0V 0.350W Diodes Inc. -
\r
2501 .SUBCKT DI_BZX84C47 1 2
\r
2506 .MODEL DF D ( IS=3.07p RS=27.6 N=1.10
\r
2507 + CJO=22.1p VJ=1.00 M=0.330 TT=50.1n )
\r
2508 .MODEL DR D ( IS=6.14e-016 RS=154 N=3.00 )
\r
2511 *SRC=BZX84C4V3;DI_BZX84C4V3;Diodes;Zener <=10V; 4.30V 0.350W Diodes Inc.
\r
2513 .SUBCKT DI_BZX84C4V3 1 2
\r
2518 .MODEL DF D ( IS=33.5p RS=34.4 N=1.10
\r
2519 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )
\r
2520 .MODEL DR D ( IS=6.71f RS=74.5 N=3.00 )
\r
2523 *SRC=BZX84C4V3S;DI_BZX84C4V3S;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
2525 .SUBCKT DI_BZX84C4V3S 1 2
\r
2530 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10
\r
2531 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )
\r
2533 *SRC=BZX84C4V3T;DI_BZX84C4V3T;Diodes;Zener <=10V; 4.30V 0.150W Diodes Inc. ZENER
\r
2535 .SUBCKT DI_BZX84C4V3T 1 2
\r
2540 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10
\r
2541 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )
\r
2543 *SRC=BZX84C4V3TS;DI_BZX84C4V3TS;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
2545 .SUBCKT DI_BZX84C4V3TS 1 2
\r
2550 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10
\r
2551 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )
\r
2553 *SRC=BZX84C4V3W;DI_BZX84C4V3W;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. ZENER
\r
2555 .SUBCKT DI_BZX84C4V3W 1 2
\r
2560 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10
\r
2561 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )
\r
2563 *SRC=BZX84C4V7;DI_BZX84C4V7;Diodes;Zener <=10V; 4.70V 0.350W Diodes Inc.
\r
2565 .SUBCKT DI_BZX84C4V7 1 2
\r
2570 .MODEL DF D ( IS=30.7p RS=34.2 N=1.10
\r
2571 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )
\r
2572 .MODEL DR D ( IS=6.14f RS=64.5 N=3.00 )
\r
2575 *SRC=BZX84C4V7S;DI_BZX84C4V7S;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
2577 .SUBCKT DI_BZX84C4V7S 1 2
\r
2582 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10
\r
2583 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )
\r
2585 *SRC=BZX84C4V7T;DI_BZX84C4V7T;Diodes;Zener <=10V; 4.70V 0.150W Diodes Inc. ZENER
\r
2587 .SUBCKT DI_BZX84C4V7T 1 2
\r
2592 .MODEL DF D ( IS=13.1p RS=31.7 N=1.10
\r
2593 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )
\r
2595 *SRC=BZX84C4V7TS;DI_BZX84C4V7TS;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
2597 .SUBCKT DI_BZX84C4V7TS 1 2
\r
2602 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10
\r
2603 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )
\r
2605 *SRC=BZX84C4V7W;DI_BZX84C4V7W;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. ZENER
\r
2607 .SUBCKT DI_BZX84C4V7W 1 2
\r
2612 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10
\r
2613 + CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )
\r
2615 *SRC=bzx84c51;DI_BZX84C51;Diodes;Zener >50V; 51.0V 0.350W Diodes Inc. zener
\r
2617 .SUBCKT DI_BZX84C51 1 2
\r
2622 .MODEL DF D ( IS=2.83p RS=1.77 N=1.10
\r
2623 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
2624 .MODEL DR D ( IS=5.65e-016 RS=141 N=3.00 )
\r
2627 *SRC=BZX84C5V1;DI_BZX84C5V1;Diodes;Zener <=10V; 5.10V 0.350W Diodes Inc.
\r
2629 .SUBCKT DI_BZX84C5V1 1 2
\r
2634 .MODEL DF D ( IS=28.3p RS=33.9 N=1.10
\r
2635 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n )
\r
2636 .MODEL DR D ( IS=5.65f RS=44.5 N=3.00 )
\r
2639 *SRC=BZX84C5V1S;DI_BZX84C5V1S;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
2641 .SUBCKT DI_BZX84C5V1S 1 2
\r
2646 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10
\r
2647 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n )
\r
2649 *SRC=BZX84C5V1T;DI_BZX84C5V1T;Diodes;Zener <=10V; 5.10V 0.150W Diodes Inc. ZENER
\r
2651 .SUBCKT DI_BZX84C5V1T 1 2
\r
2656 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10
\r
2657 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n )
\r
2659 *SRC=BZX84C5V1TS;DI_BZX84C5V1TS;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
2661 .SUBCKT DI_BZX84C5V1TS 1 2
\r
2666 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10
\r
2667 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n )
\r
2669 *SRC=BZX84C5V1W;DI_BZX84C5V1W;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER
\r
2671 .SUBCKT DI_BZX84C5V1W 1 2
\r
2676 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10
\r
2677 + CJO=66.2p VJ=0.750 M=0.330 TT=50.1n )
\r
2679 *SRC=BZX84C5V6;DI_BZX84C5V6;Diodes;Zener <=10V; 5.60V 0.350W Diodes Inc.
\r
2681 .SUBCKT DI_BZX84C5V6 1 2
\r
2686 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10
\r
2687 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n )
\r
2688 .MODEL DR D ( IS=5.15f RS=24.5 N=3.00 )
\r
2691 *SRC=BZX84C5V6S;DI_BZX84C5V6S;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
2693 .SUBCKT DI_BZX84C5V6S 1 2
\r
2698 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10
\r
2699 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n )
\r
2701 *SRC=BZX84C5V6T;DI_BZX84C5V6T;Diodes;Zener <=10V; 5.60V 0.150W Diodes Inc. ZENER
\r
2703 .SUBCKT DI_BZX84C5V6T 1 2
\r
2708 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10
\r
2709 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n )
\r
2711 *SRC=BZX84C5V6TS;DI_BZX84C5V6TS;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
2713 .SUBCKT DI_BZX84C5V6TS 1 2
\r
2718 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10
\r
2719 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n )
\r
2721 *SRC=BZX84C5V6W;DI_BZX84C5V6W;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER
\r
2723 .SUBCKT DI_BZX84C5V6W 1 2
\r
2728 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10
\r
2729 + CJO=57.6p VJ=0.750 M=0.330 TT=50.1n )
\r
2731 *SRC=BZX84C6V2;DI_BZX84C6V2;Diodes;Zener <=10V; 6.20V 0.350W Diodes Inc.
\r
2733 .SUBCKT DI_BZX84C6V2 1 2
\r
2738 .MODEL DF D ( IS=23.3p RS=33.4 N=1.10
\r
2739 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n )
\r
2740 .MODEL DR D ( IS=4.65f RS=2.30 N=1.49 )
\r
2743 *SRC=BZX84C6V2S;DI_BZX84C6V2S;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
2745 .SUBCKT DI_BZX84C6V2S 1 2
\r
2750 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10
\r
2751 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n )
\r
2753 *SRC=BZX84C6V2T;DI_BZX84C6V2T;Diodes;Zener <=10V; 6.20V 0.150W Diodes Inc. ZENER
\r
2755 .SUBCKT DI_BZX84C6V2T 1 2
\r
2760 .MODEL DF D ( IS=9.97p RS=31.0 N=1.10
\r
2761 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n )
\r
2763 *SRC=BZX84C6V2TS;DI_BZX84C6V2TS;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
2765 .SUBCKT DI_BZX84C6V2TS 1 2
\r
2770 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10
\r
2771 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n )
\r
2773 *SRC=BZX84C6V2W;DI_BZX84C6V2W;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER
\r
2775 .SUBCKT DI_BZX84C6V2W 1 2
\r
2780 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10
\r
2781 + CJO=49.4p VJ=0.750 M=0.330 TT=50.1n )
\r
2783 *SRC=BZX84C6V8;DI_BZX84C6V8;Diodes;Zener <=10V; 6.80V 0.350W Diodes Inc.
\r
2785 .SUBCKT DI_BZX84C6V8 1 2
\r
2790 .MODEL DF D ( IS=21.2p RS=33.1 N=1.10
\r
2791 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n )
\r
2792 .MODEL DR D ( IS=4.24f RS=3.45 N=2.23 )
\r
2795 *SRC=BZX84C6V8S;DI_BZX84C6V8S;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
2797 .SUBCKT DI_BZX84C6V8S 1 2
\r
2802 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10
\r
2803 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n )
\r
2805 SRC=BZX84C6V8T;DI_BZX84C6V8T;Diodes;Zener <=10V; 6.80V 0.150W Diodes Inc. ZENER
\r\r
2807 .SUBCKT DI_BZX84C6V8T 1 2
\r\r
2812 .MODEL DF D ( IS=9.09p RS=30.7 N=1.10
\r\r
2813 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n )
\r\r
2814 .MODEL DR D ( IS=1.82f RS=3.45 N=2.23 )
\r\r
2817 *SRC=BZX84C6V8TS;DI_BZX84C6V8TS;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
2819 .SUBCKT DI_BZX84C6V8TS 1 2
\r
2824 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10
\r
2825 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n )
\r
2827 *SRC=BZX84C6V8W;DI_BZX84C6V8W;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER
\r
2829 .SUBCKT DI_BZX84C6V8W 1 2
\r
2834 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10
\r
2835 + CJO=43.0p VJ=0.750 M=0.330 TT=50.1n )
\r
2837 *SRC=BZX84C7V5;DI_C;Diodes;Zener <=10V; 7.50V 0.350W Diodes Inc.
\r
2839 .SUBCKT DI_BZX84C7V5 1 2
\r
2844 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10
\r
2845 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )
\r
2846 .MODEL DR D ( IS=3.85f RS=3.45 N=2.23 )
\r
2849 *SRC=BZX84C7V5S;DI_BZX84C7V5S;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
2851 .SUBCKT DI_BZX84C7V5S 1 2
\r
2856 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10
\r
2857 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )
\r
2859 *SRC=BZX84C7V5T;DI_BZX84C7V5T;Diodes;Zener <=10V; 7.50V 0.150W Diodes Inc. ZENER
\r
2861 .SUBCKT DI_BZX84C7V5T 1 2
\r
2866 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10
\r
2867 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )
\r
2869 *SRC=BZX84C7V5TS;DI_BZX84C7V5TS;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
2871 .SUBCKT DI_BZX84C7V5TS 1 2
\r
2876 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10
\r
2877 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )
\r
2879 *SRC=BZX84C7V5W;DI_BZX84C7V5W;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER
\r
2881 .SUBCKT DI_BZX84C7V5W 1 2
\r
2886 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10
\r
2887 + CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )
\r
2889 *SRC=BZX84C8V2;DI_BZX84C8V2;Diodes;Zener <=10V; 8.20V 0.350W Diodes Inc.
\r
2891 .SUBCKT DI_BZX84C8V2 1 2
\r
2896 .MODEL DF D ( IS=17.6p RS=32.6 N=1.10
\r
2897 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )
\r
2898 .MODEL DR D ( IS=3.52f RS=3.45 N=2.23 )
\r
2901 *SRC=BZX84C8V2S;DI_BZX84C8V2S;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
2903 .SUBCKT DI_BZX84C8V2S 1 2
\r
2908 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10
\r
2909 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )
\r
2911 *SRC=BZX84C8V2T;DI_BZX84C8V2T;Diodes;Zener <=10V; 8.20V 0.150W Diodes Inc. ZENER
\r
2913 .SUBCKT DI_BZX84C8V2T 1 2
\r
2918 .MODEL DF D ( IS=7.54p RS=30.2 N=1.10
\r
2919 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )
\r
2921 *SRC=BZX84C8V2TS;DI_BZX84C8V2TS;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
2923 .SUBCKT DI_BZX84C8V2TS 1 2
\r
2928 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10
\r
2929 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )
\r
2931 *SRC=BZX84C8V2W;DI_BZX84C8V2W;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER
\r
2933 .SUBCKT DI_BZX84C8V2W 1 2
\r
2938 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10
\r
2939 + CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )
\r
2941 *SRC=BZX84C9V1;DI_BZX84C9V1;Diodes;Zener <=10V; 9.10V 0.350W Diodes Inc.
\r
2943 .SUBCKT DI_BZX84C9V1 1 2
\r
2948 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10
\r
2949 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n )
\r
2950 .MODEL DR D ( IS=3.17f RS=3.45 N=2.23 )
\r
2953 *SRC=BZX84C9V1S;DI_BZX84C9V1S;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER Dual, Apply ea. node
\r
2955 .SUBCKT DI_BZX84C9V1S 1 2
\r
2960 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10
\r
2961 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n )
\r
2963 *SRC=BZX84C9V1T;DI_BZX84C9V1T;Diodes;Zener <=10V; 9.10V 0.150W Diodes Inc. ZENER
\r
2965 .SUBCKT DI_BZX84C9V1T 1 2
\r
2970 .MODEL DF D ( IS=6.79p RS=29.9 N=1.10
\r
2971 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n )
\r
2973 *SRC=BZX84C9V1TS;DI_BZX84C9V1TS;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER Triple, Apply ea. node
\r
2975 .SUBCKT DI_BZX84C9V1TS 1 2
\r
2980 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10
\r
2981 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n )
\r
2983 *SRC=BZX84C9V1W;DI_BZX84C9V1W;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER
\r
2985 .SUBCKT DI_BZX84C9V1W 1 2
\r
2990 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10
\r
2991 + CJO=27.8p VJ=0.750 M=0.330 TT=50.1n )
\r
2993 *SRC=DDZ10C;DI_DDZ10C;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. ZENER
\r
2995 .SUBCKT DI_DDZ10C 1 2
\r
3000 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10
\r
3001 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )
\r
3002 .MODEL DR D ( IS=4.12f RS=4.11 N=3.00 )
\r
3005 *SRC=DDZ10CS;DI_DDZ10CS;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER
\r
3007 .SUBCKT DI_DDZ10CS 1 2
\r
3012 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10
\r
3013 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )
\r
3014 .MODEL DR D ( IS=1.65f RS=4.11 N=3.00 )
\r
3017 *SRC=DDZ11C;DI_DDZ11C;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. ZENER
\r
3019 .SUBCKT DI_DDZ11C 1 2
\r
3024 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10
\r
3025 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n )
\r
3026 .MODEL DR D ( IS=3.75f RS=2.30 N=2.97 )
\r
3029 *SRC=DDZ11CS;DI_DDZ11CS;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER
\r
3031 .SUBCKT DI_DDZ11CS 1 2
\r
3036 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10
\r
3037 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n )
\r
3038 .MODEL DR D ( IS=1.50f RS=2.30 N=2.97 )
\r
3041 *SRC=DDZ12C;DI_DDZ12C;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. ZENER
\r
3043 .SUBCKT DI_DDZ12C 1 2
\r
3048 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10
\r
3049 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
\r
3050 .MODEL DR D ( IS=3.43f RS=4.23 N=3.00 )
\r
3053 *SRC=DDZ12CS;DI_DDZ12CS;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER
\r
3055 .SUBCKT DI_DDZ12CS 1 2
\r
3060 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10
\r
3061 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
\r
3062 .MODEL DR D ( IS=1.37f RS=4.23 N=3.00 )
\r
3065 *SRC=DDZ13B;DI_DDZ13B;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. ZENER
\r
3067 .SUBCKT DI_DDZ13B 1 2
\r
3072 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10
\r
3073 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )
\r
3074 .MODEL DR D ( IS=3.17f RS=6.23 N=3.00 )
\r
3077 *SRC=DDZ13BS;DI_DDZ13BS;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER
\r
3079 .SUBCKT DI_DDZ13BS 1 2
\r
3084 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10
\r
3085 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )
\r
3086 .MODEL DR D ( IS=1.27f RS=6.23 N=3.00 )
\r
3089 *SRC=DDZ14;DI_DDZ14;Diodes;Zener 10V-50V; 14.0V 0.500W Diodes Inc. ZENER
\r
3091 .SUBCKT DI_DDZ14 1 2
\r
3096 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10
\r
3097 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
\r
3098 .MODEL DR D ( IS=2.94f RS=8.23 N=3.00 )
\r
3101 *SRC=DDZ14S;DI_DDZ14S;Diodes;Zener 10V-50V; 14.0V 0.200W Diodes Inc. ZENER
\r
3103 .SUBCKT DI_DDZ14S 1 2
\r
3108 .MODEL DF D ( IS=5.89p RS=29.4 N=1.10
\r
3109 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
\r
3110 .MODEL DR D ( IS=1.18f RS=8.23 N=3.00 )
\r
3113 *SRC=DDZ15;DI_DDZ15;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. ZENER
\r
3115 .SUBCKT DI_DDZ15 1 2
\r
3120 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10
\r
3121 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
3122 .MODEL DR D ( IS=2.75f RS=10.2 N=3.00 )
\r
3125 *SRC=DDZ15S;DI_DDZ15S;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER
\r
3127 .SUBCKT DI_DDZ15S 1 2
\r
3132 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10
\r
3133 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
3134 .MODEL DR D ( IS=1.10f RS=10.2 N=3.00 )
\r
3137 *SRC=DDZ16;DI_DDZ16;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. ZENER
\r
3139 .SUBCKT DI_DDZ16 1 2
\r
3144 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10
\r
3145 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
3146 .MODEL DR D ( IS=2.58f RS=10.2 N=3.00 )
\r
3149 *SRC=DDZ16S;DI_DDZ16S;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER
\r
3151 .SUBCKT DI_DDZ16S 1 2
\r
3156 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10
\r
3157 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
3158 .MODEL DR D ( IS=1.03f RS=10.2 N=3.00 )
\r
3161 *SRC=DDZ18C;DI_DDZ18C;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. ZENER
\r
3163 .SUBCKT DI_DDZ18C 1 2
\r
3168 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10
\r
3169 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )
\r
3170 .MODEL DR D ( IS=2.29f RS=15.2 N=3.00 )
\r
3173 *SRC=DDZ18CS;DI_DDZ18CS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER
\r
3175 .SUBCKT DI_DDZ18CS 1 2
\r
3180 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10
\r
3181 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )
\r
3182 .MODEL DR D ( IS=9.16e-016 RS=15.2 N=3.00 )
\r
3185 *SRC=DDZ20C;DI_DDZ20C;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. ZENER
\r
3187 .SUBCKT DI_DDZ20C 1 2
\r
3192 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10
\r
3193 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )
\r
3194 .MODEL DR D ( IS=2.06f RS=20.2 N=3.00 )
\r
3197 *SRC=DDZ20CS;DI_DDZ20CS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER
\r
3199 .SUBCKT DI_DDZ20CS 1 2
\r
3204 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10
\r
3205 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )
\r
3206 .MODEL DR D ( IS=8.24e-016 RS=20.2 N=3.00 )
\r
3209 *SRC=DDZ22D;DI_DDZ22D;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. ZENER
\r
3211 .SUBCKT DI_DDZ22D 1 2
\r
3216 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10
\r
3217 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
\r
3218 .MODEL DR D ( IS=1.87f RS=14.5 N=3.00 )
\r
3221 *SRC=DDZ22DS;DI_DDZ22DS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER
\r
3223 .SUBCKT DI_DDZ22DS 1 2
\r
3228 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10
\r
3229 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
\r
3230 .MODEL DR D ( IS=7.49e-016 RS=14.5 N=3.00 )
\r
3233 *SRC=DDZ24C;DI_DDZ24C;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. ZENER
\r
3235 .SUBCKT DI_DDZ24C 1 2
\r
3240 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10
\r
3241 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r
3242 .MODEL DR D ( IS=1.72f RS=19.5 N=3.00 )
\r
3245 *SRC=DDZ24CS;DI_DDZ24CS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER
\r
3247 .SUBCKT DI_DDZ24CS 1 2
\r
3252 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10
\r
3253 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r
3254 .MODEL DR D ( IS=6.87e-016 RS=19.5 N=3.00 )
\r
3257 *SRC=DDZ27D;DI_DDZ27D;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. ZENER
\r
3259 .SUBCKT DI_DDZ27D 1 2
\r
3264 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10
\r
3265 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r
3266 .MODEL DR D ( IS=1.53f RS=29.5 N=3.00 )
\r
3269 *SRC=DDZ27DS;DI_DDZ27DS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER
\r
3271 .SUBCKT DI_DDZ27DS 1 2
\r
3276 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10
\r
3277 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r
3278 .MODEL DR D ( IS=6.10e-016 RS=29.5 N=3.00 )
\r
3281 *SRC=DDZ30D;DI_DDZ30D;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. ZENER
\r
3283 .SUBCKT DI_DDZ30D 1 2
\r
3288 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10
\r
3289 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
\r
3290 .MODEL DR D ( IS=1.37f RS=39.5 N=3.00 )
\r
3293 *SRC=DDZ30DS;DI_DDZ30DS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER
\r
3295 .SUBCKT DI_DDZ30DS 1 2
\r
3300 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10
\r
3301 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
\r
3302 .MODEL DR D ( IS=5.49e-016 RS=39.5 N=3.00 )
\r
3305 *SRC=DDZ33;DI_DDZ33;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. ZENER
\r
3307 .SUBCKT DI_DDZ33 1 2
\r
3312 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10
\r
3313 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
3314 .MODEL DR D ( IS=1.25f RS=59.5 N=3.00 )
\r
3317 *SRC=DDZ33S;DI_DDZ33S;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER
\r
3319 .SUBCKT DI_DDZ33S 1 2
\r
3324 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10
\r
3325 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
3326 .MODEL DR D ( IS=4.99e-016 RS=59.5 N=3.00 )
\r
3329 *SRC=DDZ36;DI_DDZ36;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. ZENER
\r
3331 .SUBCKT DI_DDZ36 1 2
\r
3336 .MODEL DF D ( IS=5.72p RS=29.4 N=1.10
\r
3337 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )
\r
3338 .MODEL DR D ( IS=1.14f RS=69.5 N=3.00 )
\r
3341 *SRC=DDZ36S;DI_DDZ36S;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER
\r
3343 .SUBCKT DI_DDZ36S 1 2
\r
3348 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10
\r
3349 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
3350 .MODEL DR D ( IS=4.58e-016 RS=69.5 N=3.00 )
\r
3353 *SRC=DDZ39F;DI_DDZ39F;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. ZENER
\r
3355 .SUBCKT DI_DDZ39F 1 2
\r
3360 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10
\r
3361 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
3362 .MODEL DR D ( IS=1.06f RS=69.5 N=3.00 )
\r
3365 *SRC=DDZ39FS;DI_DDZ39FS;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER
\r
3367 .SUBCKT DI_DDZ39FS 1 2
\r
3372 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10
\r
3373 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
3374 .MODEL DR D ( IS=4.23e-016 RS=69.5 N=3.00 )
\r
3377 *SRC=DDZ43;DI_DDZ43;Diodes;Zener 10V-50V; 43.0V 0.500W Diodes Inc. ZENER
\r
3379 .SUBCKT DI_DDZ43 1 2
\r
3384 .MODEL DF D ( IS=4.79p RS=28.9 N=1.10
\r
3385 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )
\r
3386 .MODEL DR D ( IS=9.58e-016 RS=74.5 N=3.00 )
\r
3389 *SRC=DDZ43S;DI_DDZ43S;Diodes;Zener 10V-50V; 43.0V 0.200W Diodes Inc. ZENER
\r
3391 .SUBCKT DI_DDZ43S 1 2
\r
3396 .MODEL DF D ( IS=1.92p RS=26.3 N=1.10
\r
3397 + CJO=12.6p VJ=1.00 M=0.330 TT=50.1n )
\r
3398 .MODEL DR D ( IS=3.83e-016 RS=74.5 N=3.00 )
\r
3401 *SRC=DDZ47S;DI_DDZ47S;Diodes;Zener 10V-50V; 47.0V 0.200W Diodes Inc. ZENER
\r
3403 .SUBCKT DI_DDZ47S 1 2
\r
3408 .MODEL DF D ( IS=1.75p RS=26.0 N=1.10
\r
3409 + CJO=12.6p VJ=1.00 M=0.330 TT=50.1n )
\r
3410 .MODEL DR D ( IS=3.51e-016 RS=74.5 N=3.00 )
\r
3413 *SRC=DDZ5V1B;DI_DDZ5V1B;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. ZENER
\r
3415 .SUBCKT DI_DDZ5V1B 1 2
\r
3420 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10
\r
3421 + CJO=119p VJ=0.750 M=0.330 TT=50.1n )
\r
3422 .MODEL DR D ( IS=8.08f RS=13.1 N=3.00 )
\r
3425 *SRC=DDZ5V1BS;DI_DDZ5V1BS;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER
\r
3427 .SUBCKT DI_DDZ5V1BS 1 2
\r
3432 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10
\r
3433 + CJO=119p VJ=0.750 M=0.330 TT=50.1n )
\r
3434 .MODEL DR D ( IS=3.23f RS=13.1 N=3.00 )
\r
3437 *SRC=DDZ5V6B;DI_DDZ5V6B;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. ZENER
\r
3439 .SUBCKT DI_DDZ5V6B 1 2
\r
3444 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10
\r
3445 + CJO=106p VJ=0.750 M=0.330 TT=50.1n )
\r
3446 .MODEL DR D ( IS=7.36f RS=7.11 N=3.00 )
\r
3449 *SRC=DDZ5V6BS;DI_DDZ5V6BS;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER
\r
3451 .SUBCKT DI_DDZ5V6BS 1 2
\r
3456 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10
\r
3457 + CJO=106p VJ=0.750 M=0.330 TT=50.1n )
\r
3458 .MODEL DR D ( IS=2.94f RS=7.11 N=3.00 )
\r
3461 *SRC=DDZ6V2B;DI_DDZ6V2B;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. ZENER
\r
3463 .SUBCKT DI_DDZ6V2B 1 2
\r
3468 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10
\r
3469 + CJO=80.7p VJ=0.750 M=0.330 TT=50.1n )
\r
3470 .MODEL DR D ( IS=6.65f RS=3.11 N=3.00 )
\r
3473 *SRC=DDZ6V2BS;DI_DDZ6V2BS;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER
\r
3475 .SUBCKT DI_DDZ6V2BS 1 2
\r
3480 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10
\r
3481 + CJO=80.7p VJ=0.750 M=0.330 TT=50.1n )
\r
3482 .MODEL DR D ( IS=2.66f RS=3.11 N=3.00 )
\r
3485 *SRC=DDZ6V8C;DI_DDZ6V8C;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. ZENER
\r
3487 .SUBCKT DI_DDZ6V8C 1 2
\r
3492 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10
\r
3493 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
\r
3494 .MODEL DR D ( IS=6.06f RS=1.15 N=2.97 )
\r
3497 *SRC=DDZ6V8CS;DI_DDZ6V8CS;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER
\r
3499 .SUBCKT DI_DDZ6V8CS 1 2
\r
3504 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10
\r
3505 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
\r
3506 .MODEL DR D ( IS=2.42f RS=1.15 N=2.97 )
\r
3509 *SRC=DDZ7V5C;DI_DDZ7V5C;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. ZENER
\r
3511 .SUBCKT DI_DDZ7V5C 1 2
\r
3516 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10
\r
3517 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
\r
3518 .MODEL DR D ( IS=5.49f RS=2.12 N=3.00 )
\r
3521 *SRC=DDZ7V5CS;DI_DDZ7V5CS;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER
\r
3523 .SUBCKT DI_DDZ7V5CS 1 2
\r
3528 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10
\r
3529 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
\r
3530 .MODEL DR D ( IS=2.20f RS=2.12 N=3.00 )
\r
3533 *SRC=DDZ8V2C;DI_DDZ8V2C;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. ZENER
\r
3535 .SUBCKT DI_DDZ8V2C 1 2
\r
3540 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10
\r
3541 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
\r
3542 .MODEL DR D ( IS=5.02f RS=4.11 N=3.00 )
\r
3545 *SRC=DDZ8V2CS;DI_DDZ8V2CS;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER
\r
3547 .SUBCKT DI_DDZ8V2CS 1 2
\r
3552 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10
\r
3553 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
\r
3554 .MODEL DR D ( IS=2.01f RS=4.11 N=3.00 )
\r
3557 *SRC=DDZ9688;DI_DDZ9688;Diodes;Zener <=10V; 4.70V 0.500W Diodes Inc. zener
\r
3559 .SUBCKT DI_DDZ9688 1 2
\r
3564 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10
\r
3565 + CJO=119p VJ=0.750 M=0.330 TT=50.1n )
\r
3566 .MODEL DR D ( IS=8.77f RS=6.45k N=3.00 )
\r
3569 *SRC=DDZ9688S;DI_DDZ9688S;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. zener
\r
3571 .SUBCKT DI_DDZ9688S 1 2
\r
3576 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10
\r
3577 + CJO=119p VJ=0.750 M=0.330 TT=50.1n )
\r
3578 .MODEL DR D ( IS=3.51f RS=6.45k N=3.00 )
\r
3581 *SRC=DDZ9689;DI_DDZ9689;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. zener
\r
3583 .SUBCKT DI_DDZ9689 1 2
\r
3588 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10
\r
3589 + CJO=119p VJ=0.750 M=0.330 TT=50.1n )
\r
3590 .MODEL DR D ( IS=8.08f RS=3.95k N=3.00 )
\r
3593 *SRC=DDZ9689S;DI_DDZ9689S;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. zener
\r
3595 .SUBCKT DI_DDZ9689S 1 2
\r
3600 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10
\r
3601 + CJO=119p VJ=0.750 M=0.330 TT=50.1n )
\r
3602 .MODEL DR D ( IS=3.23f RS=3.95k N=3.00 )
\r
3605 *SRC=DDZ9690;DI_DDZ9690;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. zener
\r
3607 .SUBCKT DI_DDZ9690 1 2
\r
3612 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10
\r
3613 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n )
\r
3614 .MODEL DR D ( IS=7.36f RS=946 N=3.00 )
\r
3617 *SRC=DDZ9690S;DI_DDZ9690S;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. zener
\r
3619 .SUBCKT DI_DDZ9690S 1 2
\r
3624 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10
\r
3625 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n )
\r
3626 .MODEL DR D ( IS=2.94f RS=946 N=3.00 )
\r
3629 *SRC=DDZ9691;DI_DDZ9691;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. zener
\r
3631 .SUBCKT DI_DDZ9691 1 2
\r
3636 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10
\r
3637 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
\r
3638 .MODEL DR D ( IS=6.65f RS=230 N=1.49 )
\r
3641 *SRC=DDZ9691S;DI_DDZ9691S;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. zener
\r
3643 .SUBCKT DI_DDZ9691S 1 2
\r
3648 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10
\r
3649 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
\r
3650 .MODEL DR D ( IS=2.66f RS=230 N=1.49 )
\r
3653 *SRC=DDZ9692;DI_DDZ9692;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. zener
\r
3655 .SUBCKT DI_DDZ9692 1 2
\r
3660 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10
\r
3661 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
\r
3662 .MODEL DR D ( IS=6.06f RS=23.0 N=0.149 )
\r
3665 *SRC=DDZ9692S;DI_DDZ9692S;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. zener
\r
3667 .SUBCKT DI_DDZ9692S 1 2
\r
3672 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10
\r
3673 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
\r
3674 .MODEL DR D ( IS=2.42f RS=23.0 N=0.149 )
\r
3677 *SRC=DDZ9693;DI_DDZ9693;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. zener
\r
3679 .SUBCKT DI_DDZ9693 1 2
\r
3684 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10
\r
3685 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
\r
3686 .MODEL DR D ( IS=5.49f RS=23.0 N=0.149 )
\r
3689 *SRC=DDZ9693S;DI_DDZ9693S;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. zener
\r
3691 .SUBCKT DI_DDZ9693S 1 2
\r
3696 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10
\r
3697 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
\r
3698 .MODEL DR D ( IS=2.20f RS=23.0 N=0.149 )
\r
3701 *SRC=DDZ9694;DI_DDZ9694;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. zener
\r
3703 .SUBCKT DI_DDZ9694 1 2
\r
3708 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10
\r
3709 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n )
\r
3710 .MODEL DR D ( IS=5.02f RS=34.5 N=0.223 )
\r
3713 *SRC=DDZ9694S;DI_DDZ9694S;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. zener
\r
3715 .SUBCKT DI_DDZ9694S 1 2
\r
3720 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10
\r
3721 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n )
\r
3722 .MODEL DR D ( IS=2.01f RS=34.5 N=0.223 )
\r
3725 *SRC=DDZ9696;DI_DDZ9696;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. zener
\r
3727 .SUBCKT DI_DDZ9696 1 2
\r
3732 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10
\r
3733 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
\r
3734 .MODEL DR D ( IS=4.53f RS=50.6 N=0.327 )
\r
3737 *SRC=DDZ9696S;DI_DDZ9696S;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. zener
\r
3739 .SUBCKT DI_DDZ9696S 1 2
\r
3744 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10
\r
3745 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
\r
3746 .MODEL DR D ( IS=1.81f RS=50.6 N=0.327 )
\r
3749 *SRC=DDZ9697;DI_DDZ9697;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. zener
\r
3751 .SUBCKT DI_DDZ9697 1 2
\r
3756 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10
\r
3757 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )
\r
3758 .MODEL DR D ( IS=4.12f RS=69.0 N=0.446 )
\r
3761 *SRC=DDZ9697S;DI_DDZ9697S;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. zener
\r
3763 .SUBCKT DI_DDZ9697S 1 2
\r
3768 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10
\r
3769 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )
\r
3770 .MODEL DR D ( IS=1.65f RS=69.0 N=0.446 )
\r
3773 *SRC=DDZ9698;DI_DDZ9698;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. zener
\r
3775 .SUBCKT DI_DDZ9698 1 2
\r
3780 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10
\r
3781 + CJO=35.2p VJ=1.00 M=0.330 TT=50.1n )
\r
3782 .MODEL DR D ( IS=3.75f RS=69.0 N=0.446 )
\r
3785 *SRC=DDZ9699;DI_DDZ9699;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. zener
\r
3787 .SUBCKT DI_DDZ9699 1 2
\r
3792 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10
\r
3793 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
\r
3794 .MODEL DR D ( IS=3.43f RS=69.0 N=0.446 )
\r
3797 *SRC=DDZ9699S;DI_DDZ9699S;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. zener
\r
3799 .SUBCKT DI_DDZ9699S 1 2
\r
3804 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10
\r
3805 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
\r
3806 .MODEL DR D ( IS=1.37f RS=69.0 N=0.446 )
\r
3809 *SRC=DDZ9700;DI_DDZ9700;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. zener
\r
3811 .SUBCKT DI_DDZ9700 1 2
\r
3816 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10
\r
3817 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )
\r
3818 .MODEL DR D ( IS=3.17f RS=69.0 N=0.446 )
\r
3821 *SRC=DDZ9700S;DI_DDZ9700S;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. zener
\r
3823 .SUBCKT DI_DDZ9700S 1 2
\r
3828 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10
\r
3829 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )
\r
3830 .MODEL DR D ( IS=1.27f RS=69.0 N=0.446 )
\r
3833 *SRC=DDZ9701;DI_DDZ9701;Diodes;Zener 10V-50V; 14.0V 0.500W Diodes Inc. zener
\r
3835 .SUBCKT DI_DDZ9701 1 2
\r
3840 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10
\r
3841 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n )
\r
3842 .MODEL DR D ( IS=2.94f RS=69.0 N=0.446 )
\r
3845 *SRC=DDZ9702;DI_DDZ9702;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. zener
\r
3847 .SUBCKT DI_DDZ9702 1 2
\r
3852 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10
\r
3853 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
\r
3854 .MODEL DR D ( IS=2.75f RS=69.0 N=0.446 )
\r
3857 *SRC=DDZ9702S;DI_DDZ9702S;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. zener
\r
3859 .SUBCKT DI_DDZ9702S 1 2
\r
3864 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10
\r
3865 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
\r
3866 .MODEL DR D ( IS=1.10f RS=69.0 N=0.446 )
\r
3869 *SRC=DDZ9703;DI_DDZ9703;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. zener
\r
3871 .SUBCKT DI_DDZ9703 1 2
\r
3876 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10
\r
3877 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
3878 .MODEL DR D ( IS=2.58f RS=69.0 N=0.446 )
\r
3881 *SRC=DDZ9703S;DI_DDZ9703S;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. zener
\r
3883 .SUBCKT DI_DDZ9703S 1 2
\r
3888 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10
\r
3889 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
3890 .MODEL DR D ( IS=1.03f RS=69.0 N=0.446 )
\r
3893 *SRC=DDZ9705;DI_DDZ9705;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. zener
\r
3895 .SUBCKT DI_DDZ9705 1 2
\r
3900 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10
\r
3901 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r
3902 .MODEL DR D ( IS=2.29f RS=69.0 N=0.446 )
\r
3905 *SRC=DDZ9705S;DI_DDZ9705S;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. zener
\r
3907 .SUBCKT DI_DDZ9705S 1 2
\r
3912 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10
\r
3913 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r
3914 .MODEL DR D ( IS=9.16e-016 RS=69.0 N=0.446 )
\r
3917 *SRC=DDZ9707;DI_DDZ9707;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. zener
\r
3919 .SUBCKT DI_DDZ9707 1 2
\r
3924 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10
\r
3925 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r
3926 .MODEL DR D ( IS=2.06f RS=69.0 N=0.446 )
\r
3929 *SRC=DDZ9707S;DI_DDZ9707S;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. zener
\r
3931 .SUBCKT DI_DDZ9707S 1 2
\r
3936 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10
\r
3937 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r
3938 .MODEL DR D ( IS=8.24e-016 RS=69.0 N=0.446 )
\r
3941 *SRC=DDZ9708;DI_DDZ9708;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. zener
\r
3943 .SUBCKT DI_DDZ9708 1 2
\r
3948 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10
\r
3949 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r
3950 .MODEL DR D ( IS=1.87f RS=92.0 N=0.594 )
\r
3953 *SRC=DDZ9708S;DI_DDZ9708S;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. zener
\r
3955 .SUBCKT DI_DDZ9708S 1 2
\r
3960 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10
\r
3961 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r
3962 .MODEL DR D ( IS=7.49e-016 RS=92.0 N=0.594 )
\r
3965 *SRC=DDZ9709;DI_DDZ9709;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. zener
\r
3967 .SUBCKT DI_DDZ9709 1 2
\r
3972 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10
\r
3973 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r
3974 .MODEL DR D ( IS=1.72f RS=92.0 N=0.594 )
\r
3977 *SRC=DDZ9709S;DI_DDZ9709S;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. zener
\r
3979 .SUBCKT DI_DDZ9709S 1 2
\r
3984 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10
\r
3985 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r
3986 .MODEL DR D ( IS=6.87e-016 RS=92.0 N=0.594 )
\r
3989 *SRC=DDZ9711;DI_DDZ9711;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. zener
\r
3991 .SUBCKT DI_DDZ9711 1 2
\r
3996 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10
\r
3997 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
\r
3998 .MODEL DR D ( IS=1.53f RS=92.0 N=0.594 )
\r
4001 *SRC=DDZ9711S;DI_DDZ9711S;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. zener
\r
4003 .SUBCKT DI_DDZ9711S 1 2
\r
4008 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10
\r
4009 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
\r
4010 .MODEL DR D ( IS=6.10e-016 RS=92.0 N=0.594 )
\r
4013 *SRC=DDZ9712;DI_DDZ9712;Diodes;Zener 10V-50V; 28.0V 0.500W Diodes Inc. zener
\r
4015 .SUBCKT DI_DDZ9712 1 2
\r
4020 .MODEL DF D ( IS=7.36p RS=30.1 N=1.10
\r
4021 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
\r
4022 .MODEL DR D ( IS=1.47f RS=92.0 N=0.594 )
\r
4025 *SRC=DDZ9712S;DI_DDZ9712S;Diodes;Zener 10V-50V; 28.0V 0.200W Diodes Inc. zener
\r
4027 .SUBCKT DI_DDZ9712S 1 2
\r
4032 .MODEL DF D ( IS=2.94p RS=27.5 N=1.10
\r
4033 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
\r
4034 .MODEL DR D ( IS=5.89e-016 RS=92.0 N=0.594 )
\r
4037 *SRC=DDZ9713;DI_DDZ9713;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. zener
\r
4039 .SUBCKT DI_DDZ9713 1 2
\r
4044 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10
\r
4045 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
4046 .MODEL DR D ( IS=1.37f RS=92.0 N=0.594 )
\r
4049 *SRC=DDZ9713S;DI_DDZ9713S;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. zener
\r
4051 .SUBCKT DI_DDZ9713S 1 2
\r
4056 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10
\r
4057 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
4058 .MODEL DR D ( IS=5.49e-016 RS=92.0 N=0.594 )
\r
4061 *SRC=DDZ9714;DI_DDZ9714;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. zener
\r
4063 .SUBCKT DI_DDZ9714 1 2
\r
4068 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10
\r
4069 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
4070 .MODEL DR D ( IS=1.25f RS=1.35k N=3.00 )
\r
4073 *SRC=DDZ9714S;DI_DDZ9714S;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. zener
\r
4075 .SUBCKT DI_DDZ9714S 1 2
\r
4080 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10
\r
4081 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
4082 .MODEL DR D ( IS=4.99e-016 RS=1.35k N=3.00 )
\r
4085 *SRC=DDZ9715;DI_DDZ9715;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. zener
\r
4087 .SUBCKT DI_DDZ9715 1 2
\r
4092 .MODEL DF D ( IS=5.72p RS=29.4 N=1.10
\r
4093 + CJO=13.6p VJ=1.00 M=0.330 TT=50.1n )
\r
4094 .MODEL DR D ( IS=1.14f RS=4.45k N=3.00 )
\r
4097 *SRC=DDZ9715S;DI_DDZ9715S;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. zener
\r
4099 .SUBCKT DI_DDZ9715S 1 2
\r
4104 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10
\r
4105 + CJO=13.1p VJ=1.00 M=0.330 TT=50.1n )
\r
4106 .MODEL DR D ( IS=4.58e-016 RS=1.45k N=3.00 )
\r
4109 *SRC=DDZ9716;DI_DDZ9716;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. zener
\r
4111 .SUBCKT DI_DDZ9716 1 2
\r
4116 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10
\r
4117 + CJO=24.5p VJ=1.00 M=0.330 TT=50.1n )
\r
4118 .MODEL DR D ( IS=1.06f RS=4.45k N=3.00 )
\r
4121 *SRC=DDZ9716S;DI_DDZ9716S;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. zener
\r
4123 .SUBCKT DI_DDZ9716S 1 2
\r
4128 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10
\r
4129 + CJO=12.8p VJ=1.00 M=0.330 TT=50.1n )
\r
4130 .MODEL DR D ( IS=4.23e-016 RS=1.45k N=3.00 )
\r
4133 *SRC=DDZ9717;DI_DDZ9717;Diodes;Zener 10V-50V; 43.0V 0.500W Diodes Inc. zener
\r
4135 .SUBCKT DI_DDZ9717 1 2
\r
4140 .MODEL DF D ( IS=4.79p RS=28.9 N=1.10
\r
4141 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
4142 .MODEL DR D ( IS=9.58e-016 RS=6.25k N=3.00 )
\r
4145 *SRC=DDZ9V1C;DI_DDZ9V1C;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. ZENER
\r
4147 .SUBCKT DI_DDZ9V1C 1 2
\r
4152 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10
\r
4153 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n )
\r
4154 .MODEL DR D ( IS=4.53f RS=4.11 N=3.00 )
\r
4157 *SRC=DDZ9V1CS;DI_DDZ9V1CS;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER
\r
4159 .SUBCKT DI_DDZ9V1CS 1 2
\r
4164 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10
\r
4165 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n )
\r
4166 .MODEL DR D ( IS=1.81f RS=4.11 N=3.00 )
\r
4169 *SRC=DDZX10C;DI_DDZX10C;Diodes;Zener <=10V; 10.0V 0.300W Diodes Inc. ZENER
\r
4171 .SUBCKT DI_DDZX10C 1 2
\r
4176 .MODEL DF D ( IS=12.4p RS=31.6 N=1.10
\r
4177 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )
\r
4178 .MODEL DR D ( IS=2.47f RS=4.11 N=3.00 )
\r
4181 *SRC=DDZX10CTS;DI_DDZX10CTS;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER
\r
4183 .SUBCKT DI_DDZX10CTS 1 2
\r
4188 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10
\r
4189 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )
\r
4190 .MODEL DR D ( IS=1.65f RS=4.11 N=3.00 )
\r
4193 *SRC=DDZX10CW;DI_DDZX10CW;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. ZENER
\r
4195 .SUBCKT DI_DDZX10CW 1 2
\r
4200 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10
\r
4201 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )
\r
4202 .MODEL DR D ( IS=1.65f RS=4.11 N=3.00 )
\r
4205 *SRC=DDZX11C;DI_DDZX11C;Diodes;Zener 10V-50V; 11.0V 0.300W Diodes Inc. ZENER
\r
4207 .SUBCKT DI_DDZX11C 1 2
\r
4212 .MODEL DF D ( IS=11.2p RS=31.3 N=1.10
\r
4213 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n )
\r
4214 .MODEL DR D ( IS=2.25f RS=2.30 N=2.97 )
\r
4217 *SRC=DDZX11CTS;DI_DDZX11CTS;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER
\r
4219 .SUBCKT DI_DDZX11CTS 1 2
\r
4224 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10
\r
4225 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n )
\r
4226 .MODEL DR D ( IS=1.50f RS=2.30 N=2.97 )
\r
4229 *SRC=DDZX11CW;DI_DDZX11CW;Diodes;Zener 10V-50V; 11.0V 0.200W Diodes Inc. ZENER
\r
4231 .SUBCKT DI_DDZX11CW 1 2
\r
4236 .MODEL DF D ( IS=7.49p RS=30.1 N=1.10
\r
4237 + CJO=33.9p VJ=1.00 M=0.330 TT=50.1n )
\r
4238 .MODEL DR D ( IS=1.50f RS=2.30 N=2.97 )
\r
4241 *SRC=DDZX12C;DI_DDZX12C;Diodes;Zener 10V-50V; 12.0V 0.300W Diodes Inc. ZENER
\r
4243 .SUBCKT DI_DDZX12C 1 2
\r
4248 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10
\r
4249 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
\r
4250 .MODEL DR D ( IS=2.06f RS=4.23 N=3.00 )
\r
4253 *SRC=DDZX12CTS;DI_DDZX12CTS;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER
\r
4255 .SUBCKT DI_DDZX12CTS 1 2
\r
4260 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10
\r
4261 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
\r
4262 .MODEL DR D ( IS=1.37f RS=4.23 N=3.00 )
\r
4265 *SRC=DDZX12CW;DI_DDZX12CW;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. ZENER
\r
4267 .SUBCKT DI_DDZX12CW 1 2
\r
4272 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10
\r
4273 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
\r
4274 .MODEL DR D ( IS=1.37f RS=4.23 N=3.00 )
\r
4277 *SRC=DDZX13B;DI_DDZX13B;Diodes;Zener 10V-50V; 13.0V 0.300W Diodes Inc. ZENER
\r
4279 .SUBCKT DI_DDZX13B 1 2
\r
4284 .MODEL DF D ( IS=9.51p RS=30.8 N=1.10
\r
4285 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )
\r
4286 .MODEL DR D ( IS=1.90f RS=6.23 N=3.00 )
\r
4289 *SRC=DDZX13BTS;DI_DDZX13BTS;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER
\r
4291 .SUBCKT DI_DDZX13BTS 1 2
\r
4296 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10
\r
4297 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )
\r
4298 .MODEL DR D ( IS=1.27f RS=6.23 N=3.00 )
\r
4301 *SRC=DDZX13BW;DI_DDZX13BW;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. ZENER
\r
4303 .SUBCKT DI_DDZX13BW 1 2
\r
4308 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10
\r
4309 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )
\r
4310 .MODEL DR D ( IS=1.27f RS=6.23 N=3.00 )
\r
4313 *SRC=DDZX14;DI_DDZX14;Diodes;Zener 10V-50V; 14.0V 0.300W Diodes Inc. ZENER
\r
4315 .SUBCKT DI_DDZX14 1 2
\r
4320 .MODEL DF D ( IS=8.83p RS=30.6 N=1.10
\r
4321 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
\r
4322 .MODEL DR D ( IS=1.77f RS=8.23 N=3.00 )
\r
4325 *SRC=DDZX14TS;DI_DDZX14TS;Diodes;Zener 10V-50V; 14.0V 0.200W Diodes Inc. ZENER
\r
4327 .SUBCKT DI_DDZX14TS 1 2
\r
4332 .MODEL DF D ( IS=5.89p RS=29.4 N=1.10
\r
4333 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
\r
4334 .MODEL DR D ( IS=1.18f RS=8.23 N=3.00 )
\r
4337 *SRC=DDZX14W;DI_DDZX14W;Diodes;Zener 10V-50V; 14.0V 0.200W Diodes Inc. ZENER
\r
4339 .SUBCKT DI_DDZX14W 1 2
\r
4344 .MODEL DF D ( IS=5.89p RS=29.4 N=1.10
\r
4345 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
\r
4346 .MODEL DR D ( IS=1.18f RS=8.23 N=3.00 )
\r
4349 *SRC=DDZX15;DI_DDZX15;Diodes;Zener 10V-50V; 15.0V 0.300W Diodes Inc. ZENER
\r
4351 .SUBCKT DI_DDZX15 1 2
\r
4356 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10
\r
4357 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
4358 .MODEL DR D ( IS=1.65f RS=10.2 N=3.00 )
\r
4361 *SRC=DDZX15TS;DI_DDZX15TS;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER
\r
4363 .SUBCKT DI_DDZX15TS 1 2
\r
4368 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10
\r
4369 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
4370 .MODEL DR D ( IS=1.10f RS=10.2 N=3.00 )
\r
4373 *SRC=DDZX15W;DI_DDZX15W;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. ZENER
\r
4375 .SUBCKT DI_DDZX15W 1 2
\r
4380 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10
\r
4381 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
4382 .MODEL DR D ( IS=1.10f RS=10.2 N=3.00 )
\r
4385 *SRC=DDZX16;DI_DDZX16;Diodes;Zener 10V-50V; 16.0V 0.300W Diodes Inc. ZENER
\r
4387 .SUBCKT DI_DDZX16 1 2
\r
4392 .MODEL DF D ( IS=7.72p RS=30.2 N=1.10
\r
4393 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
4394 .MODEL DR D ( IS=1.55f RS=10.2 N=3.00 )
\r
4397 *SRC=DDZX16TS;DI_DDZX16TS;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER
\r
4399 .SUBCKT DI_DDZX16TS 1 2
\r
4404 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10
\r
4405 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
4406 .MODEL DR D ( IS=1.03f RS=10.2 N=3.00 )
\r
4409 *SRC=DDZX16W;DI_DDZX16W;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. ZENER
\r
4411 .SUBCKT DI_DDZX16W 1 2
\r
4416 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10
\r
4417 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
4418 .MODEL DR D ( IS=1.03f RS=10.2 N=3.00 )
\r
4421 *SRC=DDZX18C;DI_DDZX18C;Diodes;Zener 10V-50V; 18.0V 0.300W Diodes Inc. ZENER
\r
4423 .SUBCKT DI_DDZX18C 1 2
\r
4428 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10
\r
4429 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )
\r
4430 .MODEL DR D ( IS=1.37f RS=15.2 N=3.00 )
\r
4433 *SRC=DDZX18CTS;DI_DDZX18CTS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER
\r
4435 .SUBCKT DI_DDZX18CTS 1 2
\r
4440 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10
\r
4441 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )
\r
4442 .MODEL DR D ( IS=9.16e-016 RS=15.2 N=3.00 )
\r
4445 *SRC=DDZX18CW;DI_DDZX18CW;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER
\r
4447 .SUBCKT DI_DDZX18CW 1 2
\r
4452 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10
\r
4453 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )
\r
4454 .MODEL DR D ( IS=9.16e-016 RS=15.2 N=3.00 )
\r
4457 *SRC=DDZX20C;DI_DDZX20C;Diodes;Zener 10V-50V; 20.0V 0.300W Diodes Inc. ZENER
\r
4459 .SUBCKT DI_DDZX20C 1 2
\r
4464 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10
\r
4465 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )
\r
4466 .MODEL DR D ( IS=1.24f RS=20.2 N=3.00 )
\r
4469 *SRC=DDZX20CTS;DI_DDZX20CTS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER
\r
4471 .SUBCKT DI_DDZX20CTS 1 2
\r
4476 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10
\r
4477 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )
\r
4478 .MODEL DR D ( IS=8.24e-016 RS=20.2 N=3.00 )
\r
4481 *SRC=DDZX20CW;DI_DDZX20CW;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. ZENER
\r
4483 .SUBCKT DI_DDZX20CW 1 2
\r
4488 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10
\r
4489 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )
\r
4490 .MODEL DR D ( IS=8.24e-016 RS=20.2 N=3.00 )
\r
4493 *SRC=DDZX22D;DI_DDZX22D;Diodes;Zener 10V-50V; 22.0V 0.300W Diodes Inc. ZENER
\r
4495 .SUBCKT DI_DDZX22D 1 2
\r
4500 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10
\r
4501 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
\r
4502 .MODEL DR D ( IS=1.12f RS=14.5 N=3.00 )
\r
4505 *SRC=DDZX22DTS;DI_DDZX22DTS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER
\r
4507 .SUBCKT DI_DDZX22DTS 1 2
\r
4512 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10
\r
4513 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
\r
4514 .MODEL DR D ( IS=7.49e-016 RS=14.5 N=3.00 )
\r
4517 *SRC=DDZX22DW;DI_DDZX22DW;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. ZENER
\r
4519 .SUBCKT DI_DDZX22DW 1 2
\r
4524 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10
\r
4525 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
\r
4526 .MODEL DR D ( IS=7.49e-016 RS=14.5 N=3.00 )
\r
4529 *SRC=DDZX24C;DI_DDZX24C;Diodes;Zener 10V-50V; 24.0V 0.300W Diodes Inc. ZENER
\r
4531 .SUBCKT DI_DDZX24C 1 2
\r
4536 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10
\r
4537 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r
4538 .MODEL DR D ( IS=1.03f RS=19.5 N=3.00 )
\r
4541 *SRC=DDZX24CTS;DI_DDZX24CTS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER
\r
4543 .SUBCKT DI_DDZX24CTS 1 2
\r
4548 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10
\r
4549 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r
4550 .MODEL DR D ( IS=6.87e-016 RS=19.5 N=3.00 )
\r
4553 *SRC=DDZX24CW;DI_DDZX24CW;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. ZENER
\r
4555 .SUBCKT DI_DDZX24CW 1 2
\r
4560 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10
\r
4561 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r
4562 .MODEL DR D ( IS=6.87e-016 RS=19.5 N=3.00 )
\r
4565 *SRC=DDZX27D;DI_DDZX27D;Diodes;Zener 10V-50V; 27.0V 0.300W Diodes Inc. ZENER
\r
4567 .SUBCKT DI_DDZX27D 1 2
\r
4572 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10
\r
4573 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r
4574 .MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 )
\r
4577 *SRC=DDZX27DTS;DI_DDZX27DTS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER
\r
4579 .SUBCKT DI_DDZX27DTS 1 2
\r
4584 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10
\r
4585 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r
4586 .MODEL DR D ( IS=6.10e-016 RS=29.5 N=3.00 )
\r
4589 *SRC=DDZX27DW;DI_DDZX27DW;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. ZENER
\r
4591 .SUBCKT DI_DDZX27DW 1 2
\r
4596 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10
\r
4597 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r
4598 .MODEL DR D ( IS=6.10e-016 RS=29.5 N=3.00 )
\r
4601 *SRC=DDZX30D;DI_DDZX30D;Diodes;Zener 10V-50V; 30.0V 0.300W Diodes Inc. ZENER
\r
4603 .SUBCKT DI_DDZX30D 1 2
\r
4608 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10
\r
4609 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
\r
4610 .MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 )
\r
4613 *SRC=DDZX30DS;DI_DDZX30DS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER
\r
4615 .SUBCKT DI_DDZX30DS 1 2
\r
4620 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10
\r
4621 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
\r
4622 .MODEL DR D ( IS=5.49e-016 RS=39.5 N=3.00 )
\r
4625 *SRC=DDZX30DW;DI_DDZX30DW;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. ZENER
\r
4627 .SUBCKT DI_DDZX30DW 1 2
\r
4632 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10
\r
4633 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
\r
4634 .MODEL DR D ( IS=5.49e-016 RS=39.5 N=3.00 )
\r
4637 *SRC=DDZX33;DI_DDZX33;Diodes;Zener 10V-50V; 33.0V 0.300W Diodes Inc. ZENER
\r
4639 .SUBCKT DI_DDZX33 1 2
\r
4644 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10
\r
4645 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
4646 .MODEL DR D ( IS=7.49e-016 RS=59.5 N=3.00 )
\r
4649 *SRC=DDZX33TS;DI_DDZX33TS;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER
\r
4651 .SUBCKT DI_DDZX33TS 1 2
\r
4656 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10
\r
4657 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
4658 .MODEL DR D ( IS=4.99e-016 RS=59.5 N=3.00 )
\r
4661 *SRC=DDZX33W;DI_DDZX33W;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. ZENER
\r
4663 .SUBCKT DI_DDZX33W 1 2
\r
4668 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10
\r
4669 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
4670 .MODEL DR D ( IS=4.99e-016 RS=59.5 N=3.00 )
\r
4673 *SRC=DDZX36;DI_DDZX36;Diodes;Zener 10V-50V; 36.0V 0.300W Diodes Inc. ZENER
\r
4675 .SUBCKT DI_DDZX36 1 2
\r
4680 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10
\r
4681 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )
\r
4682 .MODEL DR D ( IS=6.87e-016 RS=69.5 N=3.00 )
\r
4685 *SRC=DDZX36TS;DI_DDZX36TS;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER
\r
4687 .SUBCKT DI_DDZX36TS 1 2
\r
4692 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10
\r
4693 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
4694 .MODEL DR D ( IS=4.58e-016 RS=69.5 N=3.00 )
\r
4697 *SRC=DDZX36W;DI_DDZX36W;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. ZENER
\r
4699 .SUBCKT DI_DDZX36W 1 2
\r
4704 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10
\r
4705 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
4706 .MODEL DR D ( IS=4.58e-016 RS=69.5 N=3.00 )
\r
4709 *SRC=DDZX39F;DI_DDZX39F;Diodes;Zener 10V-50V; 39.0V 0.300W Diodes Inc. ZENER
\r
4711 .SUBCKT DI_DDZX39F 1 2
\r
4716 .MODEL DF D ( IS=3.17p RS=27.7 N=1.10
\r
4717 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
4718 .MODEL DR D ( IS=6.34e-016 RS=69.5 N=3.00 )
\r
4721 *SRC=DDZX39FTS;DI_DDZX39FTS;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER
\r
4723 .SUBCKT DI_DDZX39FTS 1 2
\r
4728 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10
\r
4729 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
4730 .MODEL DR D ( IS=4.23e-016 RS=69.5 N=3.00 )
\r
4733 *SRC=DDZX39FW;DI_DDZX39FW;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. ZENER
\r
4735 .SUBCKT DI_DDZX39FW 1 2
\r
4740 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10
\r
4741 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
4742 .MODEL DR D ( IS=4.23e-016 RS=69.5 N=3.00 )
\r
4745 *SRC=DDZX43;DI_DDZX43;Diodes;Zener 10V-50V; 43.0V 0.300W Diodes Inc. ZENER
\r
4747 .SUBCKT DI_DDZX43 1 2
\r
4752 .MODEL DF D ( IS=2.87p RS=27.4 N=1.10
\r
4753 + CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )
\r
4754 .MODEL DR D ( IS=5.75e-016 RS=74.5 N=3.00 )
\r
4757 *SRC=DDZX43TS;DI_DDZX43TS;Diodes;Zener 10V-50V; 43.0V 0.200W Diodes Inc. ZENER
\r
4759 .SUBCKT DI_DDZX43TS 1 2
\r
4764 .MODEL DF D ( IS=1.92p RS=26.3 N=1.10
\r
4765 + CJO=12.6p VJ=1.00 M=0.330 TT=50.1n )
\r
4766 .MODEL DR D ( IS=3.83e-016 RS=74.5 N=3.00 )
\r
4769 *SRC=DDZX43W;DI_DDZX43W;Diodes;Zener 10V-50V; 43.0V 0.200W Diodes Inc. ZENER
\r
4771 .SUBCKT DI_DDZX43W 1 2
\r
4776 .MODEL DF D ( IS=1.92p RS=26.3 N=1.10
\r
4777 + CJO=12.6p VJ=1.00 M=0.330 TT=50.1n )
\r
4778 .MODEL DR D ( IS=3.83e-016 RS=74.5 N=3.00 )
\r
4781 *SRC=DDZX47TS;DI_DDZX47TS;Diodes;Zener 10V-50V; 47.0V 0.200W Diodes Inc. ZENER
\r
4783 .SUBCKT DI_DDZX47TS 1 2
\r
4788 .MODEL DF D ( IS=1.75p RS=26.0 N=1.10
\r
4789 + CJO=12.6p VJ=1.00 M=0.330 TT=50.1n )
\r
4790 .MODEL DR D ( IS=3.51e-016 RS=74.5 N=3.00 )
\r
4793 *SRC=DDZX47W;DI_DDZX47W;Diodes;Zener 10V-50V; 47.0V 0.200W Diodes Inc. ZENER
\r
4795 .SUBCKT DI_DDZX47W 1 2
\r
4800 .MODEL DF D ( IS=1.75p RS=26.0 N=1.10
\r
4801 + CJO=12.6p VJ=1.00 M=0.330 TT=50.1n )
\r
4802 .MODEL DR D ( IS=3.51e-016 RS=74.5 N=3.00 )
\r
4805 *SRC=DDZX5V1B;DI_DDZX5V1B;Diodes;Zener <=10V; 5.10V 0.300W Diodes Inc. ZENER
\r
4807 .SUBCKT DI_DDZX5V1B 1 2
\r
4812 .MODEL DF D ( IS=24.2p RS=33.5 N=1.10
\r
4813 + CJO=119p VJ=0.750 M=0.330 TT=50.1n )
\r
4814 .MODEL DR D ( IS=4.85f RS=13.1 N=3.00 )
\r
4817 *SRC=DDZX5V1BTS;DI_DDZX5V1BTS;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER
\r
4819 .SUBCKT DI_DDZX5V1BTS 1 2
\r
4824 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10
\r
4825 + CJO=119p VJ=0.750 M=0.330 TT=50.1n )
\r
4826 .MODEL DR D ( IS=3.23f RS=13.1 N=3.00 )
\r
4829 *SRC=DDZX5V1BW;DI_DDZX5V1BW;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. ZENER
\r
4831 .SUBCKT DI_DDZX5V1BW 1 2
\r
4836 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10
\r
4837 + CJO=119p VJ=0.750 M=0.330 TT=50.1n )
\r
4838 .MODEL DR D ( IS=3.23f RS=13.1 N=3.00 )
\r
4841 *SRC=DDZX5V6B;DI_DDZX5V6B;Diodes;Zener <=10V; 5.60V 0.300W Diodes Inc. ZENER
\r
4843 .SUBCKT DI_DDZX5V6B 1 2
\r
4848 .MODEL DF D ( IS=22.1p RS=33.2 N=1.10
\r
4849 + CJO=106p VJ=0.750 M=0.330 TT=50.1n )
\r
4850 .MODEL DR D ( IS=4.41f RS=7.11 N=3.00 )
\r
4853 *SRC=DDZX5V6BTS;DI_DDZX5V6BTS;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER
\r
4855 .SUBCKT DI_DDZX5V6BTS 1 2
\r
4860 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10
\r
4861 + CJO=106p VJ=0.750 M=0.330 TT=50.1n )
\r
4862 .MODEL DR D ( IS=2.94f RS=7.11 N=3.00 )
\r
4865 *SRC=DDZX5V6BW;DI_DDZX5V6BW;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. ZENER
\r
4867 .SUBCKT DI_DDZX5V6BW 1 2
\r
4872 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10
\r
4873 + CJO=106p VJ=0.750 M=0.330 TT=50.1n )
\r
4874 .MODEL DR D ( IS=2.94f RS=7.11 N=3.00 )
\r
4877 *SRC=DDZX6V2B;DI_DDZX6V2B;Diodes;Zener <=10V; 6.20V 0.300W Diodes Inc. ZENER
\r
4879 .SUBCKT DI_DDZX6V2B 1 2
\r
4884 .MODEL DF D ( IS=19.9p RS=32.9 N=1.10
\r
4885 + CJO=80.7p VJ=0.750 M=0.330 TT=50.1n )
\r
4886 .MODEL DR D ( IS=3.99f RS=3.11 N=3.00 )
\r
4889 *SRC=DDZX6V2BTS;DI_DDZX6V2BTS;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER
\r
4891 .SUBCKT DI_DDZX6V2BTS 1 2
\r
4896 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10
\r
4897 + CJO=80.7p VJ=0.750 M=0.330 TT=50.1n )
\r
4898 .MODEL DR D ( IS=2.66f RS=3.11 N=3.00 )
\r
4901 *SRC=DDZX6V2BW;DI_DDZX6V2BW;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. ZENER
\r
4903 .SUBCKT DI_DDZX6V2BW 1 2
\r
4908 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10
\r
4909 + CJO=80.7p VJ=0.750 M=0.330 TT=50.1n )
\r
4910 .MODEL DR D ( IS=2.66f RS=3.11 N=3.00 )
\r
4913 *SRC=DDZX6V8C;DI_DDZX6V8C;Diodes;Zener <=10V; 6.80V 0.300W Diodes Inc. ZENER
\r
4915 .SUBCKT DI_DDZX6V8C 1 2
\r
4920 .MODEL DF D ( IS=18.2p RS=32.7 N=1.10
\r
4921 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
\r
4922 .MODEL DR D ( IS=3.64f RS=1.15 N=2.97 )
\r
4925 *SRC=DDZX6V8CTS;DI_DDZX6V8CTS;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER
\r
4927 .SUBCKT DI_DDZX6V8CTS 1 2
\r
4932 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10
\r
4933 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
\r
4934 .MODEL DR D ( IS=2.42f RS=1.15 N=2.97 )
\r
4937 *SRC=DDZX6V8CW;DI_DDZX6V8CW;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. ZENER
\r
4939 .SUBCKT DI_DDZX6V8CW 1 2
\r
4944 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10
\r
4945 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
\r
4946 .MODEL DR D ( IS=2.42f RS=1.15 N=2.97 )
\r
4949 *SRC=DDZX7V5C;DI_DDZX7V5C;Diodes;Zener <=10V; 7.50V 0.300W Diodes Inc. ZENER
\r
4951 .SUBCKT DI_DDZX7V5C 1 2
\r
4956 .MODEL DF D ( IS=16.5p RS=32.4 N=1.10
\r
4957 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
\r
4958 .MODEL DR D ( IS=3.30f RS=2.12 N=3.00 )
\r
4961 *SRC=DDZX7V5CTS;DI_DDZX7V5CTS;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER
\r
4963 .SUBCKT DI_DDZX7V5CTS 1 2
\r
4968 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10
\r
4969 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
\r
4970 .MODEL DR D ( IS=2.20f RS=2.12 N=3.00 )
\r
4973 *SRC=DDZX7V5CW;DI_DDZX7V5CW;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. ZENER
\r
4975 .SUBCKT DI_DDZX7V5CW 1 2
\r
4980 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10
\r
4981 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
\r
4982 .MODEL DR D ( IS=2.20f RS=2.12 N=3.00 )
\r
4985 *SRC=DDZX8V2C;DI_DDZX8V2C;Diodes;Zener <=10V; 8.20V 0.300W Diodes Inc. ZENER
\r
4987 .SUBCKT DI_DDZX8V2C 1 2
\r
4992 .MODEL DF D ( IS=15.1p RS=32.1 N=1.10
\r
4993 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
\r
4994 .MODEL DR D ( IS=3.01f RS=4.11 N=3.00 )
\r
4997 *SRC=DDZX8V2CTS;DI_DDZX8V2CTS;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER
\r
4999 .SUBCKT DI_DDZX8V2CTS 1 2
\r
5004 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10
\r
5005 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
\r
5006 .MODEL DR D ( IS=2.01f RS=4.11 N=3.00 )
\r
5009 *SRC=DDZX8V2CW;DI_DDZX8V2CW;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. ZENER
\r
5011 .SUBCKT DI_DDZX8V2CW 1 2
\r
5016 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10
\r
5017 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
\r
5018 .MODEL DR D ( IS=2.01f RS=4.11 N=3.00 )
\r
5021 *SRC=DDZX9688;DI_DDZX9688;Diodes;Zener <=10V; 4.70V 0.300W Diodes Inc. zener
\r
5023 .SUBCKT DI_DDZX9688 1 2
\r
5028 .MODEL DF D ( IS=26.3p RS=33.7 N=1.10
\r
5029 + CJO=119p VJ=0.750 M=0.330 TT=50.1n )
\r
5030 .MODEL DR D ( IS=5.26f RS=6.45k N=3.00 )
\r
5033 *SRC=DDZX9688TS;DI_DDZX9688TS;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. zener
\r
5035 .SUBCKT DI_DDZX9688TS 1 2
\r
5040 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10
\r
5041 + CJO=119p VJ=0.750 M=0.330 TT=50.1n )
\r
5042 .MODEL DR D ( IS=3.51f RS=6.45k N=3.00 )
\r
5045 *SRC=DDZX9688W;DI_DDZX9688W;Diodes;Zener <=10V; 4.70V 0.200W Diodes Inc. zener
\r
5047 .SUBCKT DI_DDZX9688W 1 2
\r
5052 .MODEL DF D ( IS=17.5p RS=32.6 N=1.10
\r
5053 + CJO=119p VJ=0.750 M=0.330 TT=50.1n )
\r
5054 .MODEL DR D ( IS=3.51f RS=6.45k N=3.00 )
\r
5057 *SRC=DDZX9689;DI_DDZX9689;Diodes;Zener <=10V; 5.10V 0.300W Diodes Inc. zener
\r
5059 .SUBCKT DI_DDZX9689 1 2
\r
5064 .MODEL DF D ( IS=24.2p RS=33.5 N=1.10
\r
5065 + CJO=119p VJ=0.750 M=0.330 TT=50.1n )
\r
5066 .MODEL DR D ( IS=4.85f RS=3.95k N=3.00 )
\r
5069 *SRC=DDZX9689TS;DI_DDZX9689TS;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. zener
\r
5071 .SUBCKT DI_DDZX9689TS 1 2
\r
5076 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10
\r
5077 + CJO=119p VJ=0.750 M=0.330 TT=50.1n )
\r
5078 .MODEL DR D ( IS=3.23f RS=3.95k N=3.00 )
\r
5081 *SRC=DDZX9689W;DI_DDZX9689W;Diodes;Zener <=10V; 5.10V 0.200W Diodes Inc. zener
\r
5083 .SUBCKT DI_DDZX9689W 1 2
\r
5088 .MODEL DF D ( IS=16.2p RS=32.3 N=1.10
\r
5089 + CJO=119p VJ=0.750 M=0.330 TT=50.1n )
\r
5090 .MODEL DR D ( IS=3.23f RS=3.95k N=3.00 )
\r
5093 *SRC=DDZX9690;DI_DDZX9690;Diodes;Zener <=10V; 5.60V 0.300W Diodes Inc. zener
\r
5095 .SUBCKT DI_DDZX9690 1 2
\r
5100 .MODEL DF D ( IS=22.1p RS=33.2 N=1.10
\r
5101 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n )
\r
5102 .MODEL DR D ( IS=4.41f RS=946 N=3.00 )
\r
5105 *SRC=DDZX9690TS;DI_DDZX9690TS;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. zener
\r
5107 .SUBCKT DI_DDZX9690TS 1 2
\r
5112 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10
\r
5113 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n )
\r
5114 .MODEL DR D ( IS=2.94f RS=946 N=3.00 )
\r
5117 *SRC=DDZX9690W;DI_DDZX9690W;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. zener
\r
5119 .SUBCKT DI_DDZX9690W 1 2
\r
5124 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10
\r
5125 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n )
\r
5126 .MODEL DR D ( IS=2.94f RS=946 N=3.00 )
\r
5129 *SRC=DDZX9691;DI_DDZX9691;Diodes;Zener <=10V; 6.20V 0.300W Diodes Inc. zener
\r
5131 .SUBCKT DI_DDZX9691 1 2
\r
5136 .MODEL DF D ( IS=19.9p RS=32.9 N=1.10
\r
5137 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
\r
5138 .MODEL DR D ( IS=3.99f RS=230 N=1.49 )
\r
5141 *SRC=DDZX9691TS;DI_DDZX9691TS;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. zener
\r
5143 .SUBCKT DI_DDZX9691TS 1 2
\r
5148 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10
\r
5149 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
\r
5150 .MODEL DR D ( IS=2.66f RS=230 N=1.49 )
\r
5153 *SRC=DDZX9691W;DI_DDZX9691W;Diodes;Zener <=10V; 6.20V 0.200W Diodes Inc. zener
\r
5155 .SUBCKT DI_DDZX9691W 1 2
\r
5160 .MODEL DF D ( IS=13.3p RS=31.8 N=1.10
\r
5161 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
\r
5162 .MODEL DR D ( IS=2.66f RS=230 N=1.49 )
\r
5165 *SRC=DDZX9692;DI_DDZX9692;Diodes;Zener <=10V; 6.80V 0.300W Diodes Inc. zener
\r
5167 .SUBCKT DI_DDZX9692 1 2
\r
5172 .MODEL DF D ( IS=18.2p RS=32.7 N=1.10
\r
5173 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
\r
5174 .MODEL DR D ( IS=3.64f RS=23.0 N=0.149 )
\r
5177 *SRC=DDZX9692TS;DI_DDZX9692TS;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. zener
\r
5179 .SUBCKT DI_DDZX9692TS 1 2
\r
5184 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10
\r
5185 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
\r
5186 .MODEL DR D ( IS=2.42f RS=23.0 N=0.149 )
\r
5189 *SRC=DDZX9692W;DI_DDZX9692W;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. zener
\r
5191 .SUBCKT DI_DDZX9692W 1 2
\r
5196 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10
\r
5197 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
\r
5198 .MODEL DR D ( IS=2.42f RS=23.0 N=0.149 )
\r
5201 *SRC=DDZX9693;DI_DDZX9693;Diodes;Zener <=10V; 7.50V 0.300W Diodes Inc. zener
\r
5203 .SUBCKT DI_DDZX9693 1 2
\r
5208 .MODEL DF D ( IS=16.5p RS=32.4 N=1.10
\r
5209 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
\r
5210 .MODEL DR D ( IS=3.30f RS=23.0 N=0.149 )
\r
5213 *SRC=DDZX9693TS;DI_DDZX9693TS;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. zener
\r
5215 .SUBCKT DI_DDZX9693TS 1 2
\r
5220 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10
\r
5221 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
\r
5222 .MODEL DR D ( IS=2.20f RS=23.0 N=0.149 )
\r
5225 *SRC=DDZX9693W;DI_DDZX9693W;Diodes;Zener <=10V; 7.50V 0.200W Diodes Inc. zener
\r
5227 .SUBCKT DI_DDZX9693W 1 2
\r
5232 .MODEL DF D ( IS=11.0p RS=31.2 N=1.10
\r
5233 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
\r
5234 .MODEL DR D ( IS=2.20f RS=23.0 N=0.149 )
\r
5237 *SRC=DDZX9694;DI_DDZX9694;Diodes;Zener <=10V; 8.20V 0.300W Diodes Inc. zener
\r
5239 .SUBCKT DI_DDZX9694 1 2
\r
5244 .MODEL DF D ( IS=15.1p RS=32.1 N=1.10
\r
5245 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n )
\r
5246 .MODEL DR D ( IS=3.01f RS=34.5 N=0.223 )
\r
5249 *SRC=DDZX9694TS;DI_DDZX9694TS;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. zener
\r
5251 .SUBCKT DI_DDZX9694TS 1 2
\r
5256 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10
\r
5257 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n )
\r
5258 .MODEL DR D ( IS=2.01f RS=34.5 N=0.223 )
\r
5261 *SRC=DDZX9694W;DI_DDZX9694W;Diodes;Zener <=10V; 8.20V 0.200W Diodes Inc. zener
\r
5263 .SUBCKT DI_DDZX9694W 1 2
\r
5268 .MODEL DF D ( IS=10.0p RS=31.0 N=1.10
\r
5269 + CJO=47.6p VJ=0.750 M=0.330 TT=50.1n )
\r
5270 .MODEL DR D ( IS=2.01f RS=34.5 N=0.223 )
\r
5273 *SRC=DDZX9696;DI_DDZX9696;Diodes;Zener <=10V; 9.10V 0.300W Diodes Inc. zener
\r
5275 .SUBCKT DI_DDZX9696 1 2
\r
5280 .MODEL DF D ( IS=13.6p RS=31.8 N=1.10
\r
5281 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
\r
5282 .MODEL DR D ( IS=2.72f RS=50.6 N=0.327 )
\r
5285 *SRC=DDZX9696TS;DI_DDZX9696TS;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. zener
\r
5287 .SUBCKT DI_DDZX9696TS 1 2
\r
5292 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10
\r
5293 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
\r
5294 .MODEL DR D ( IS=1.81f RS=50.6 N=0.327 )
\r
5297 *SRC=DDZX9696W;DI_DDZX9696W;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. zener
\r
5299 .SUBCKT DI_DDZX9696W 1 2
\r
5304 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10
\r
5305 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
\r
5306 .MODEL DR D ( IS=1.81f RS=50.6 N=0.327 )
\r
5309 *SRC=DDZX9697;DI_DDZX9697;Diodes;Zener <=10V; 10.0V 0.300W Diodes Inc. zener
\r
5311 .SUBCKT DI_DDZX9697 1 2
\r
5316 .MODEL DF D ( IS=12.4p RS=31.6 N=1.10
\r
5317 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )
\r
5318 .MODEL DR D ( IS=2.47f RS=69.0 N=0.446 )
\r
5321 *SRC=DDZX9697TS;DI_DDZX9697TS;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. zener
\r
5323 .SUBCKT DI_DDZX9697TS 1 2
\r
5328 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10
\r
5329 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )
\r
5330 .MODEL DR D ( IS=1.65f RS=69.0 N=0.446 )
\r
5333 *SRC=DDZX9697W;DI_DDZX9697W;Diodes;Zener <=10V; 10.0V 0.200W Diodes Inc. zener
\r
5335 .SUBCKT DI_DDZX9697W 1 2
\r
5340 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10
\r
5341 + CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )
\r
5342 .MODEL DR D ( IS=1.65f RS=69.0 N=0.446 )
\r
5345 *SRC=DDZX9699;DI_DDZX9699;Diodes;Zener 10V-50V; 12.0V 0.300W Diodes Inc. zener
\r
5347 .SUBCKT DI_DDZX9699 1 2
\r
5352 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10
\r
5353 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
\r
5354 .MODEL DR D ( IS=2.06f RS=69.0 N=0.446 )
\r
5357 *SRC=DDZX9699TS;DI_DDZX9699TS;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. zener
\r
5359 .SUBCKT DI_DDZX9699TS 1 2
\r
5364 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10
\r
5365 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
\r
5366 .MODEL DR D ( IS=1.37f RS=69.0 N=0.446 )
\r
5369 *SRC=DDZX9699W;DI_DDZX9699W;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. zener
\r
5371 .SUBCKT DI_DDZX9699W 1 2
\r
5376 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10
\r
5377 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
\r
5378 .MODEL DR D ( IS=1.37f RS=69.0 N=0.446 )
\r
5381 *SRC=DDZX9700;DI_DDZX9700;Diodes;Zener 10V-50V; 13.0V 0.300W Diodes Inc. zener
\r
5383 .SUBCKT DI_DDZX9700 1 2
\r
5388 .MODEL DF D ( IS=9.51p RS=30.8 N=1.10
\r
5389 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )
\r
5390 .MODEL DR D ( IS=1.90f RS=69.0 N=0.446 )
\r
5393 *SRC=DDZX9700TS;DI_DDZX9700TS;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. zener
\r
5395 .SUBCKT DI_DDZX9700TS 1 2
\r
5400 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10
\r
5401 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )
\r
5402 .MODEL DR D ( IS=1.27f RS=69.0 N=0.446 )
\r
5405 *SRC=DDZX9700W;DI_DDZX9700W;Diodes;Zener 10V-50V; 13.0V 0.200W Diodes Inc. zener
\r
5407 .SUBCKT DI_DDZX9700W 1 2
\r
5412 .MODEL DF D ( IS=6.34p RS=29.7 N=1.10
\r
5413 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )
\r
5414 .MODEL DR D ( IS=1.27f RS=69.0 N=0.446 )
\r
5417 *SRC=DDZX9702;DI_DDZX9702;Diodes;Zener 10V-50V; 15.0V 0.300W Diodes Inc. zener
\r
5419 .SUBCKT DI_DDZX9702 1 2
\r
5424 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10
\r
5425 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
\r
5426 .MODEL DR D ( IS=1.65f RS=69.0 N=0.446 )
\r
5429 *SRC=DDZX9702TS;DI_DDZX9702TS;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. zener
\r
5431 .SUBCKT DI_DDZX9702TS 1 2
\r
5436 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10
\r
5437 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
\r
5438 .MODEL DR D ( IS=1.10f RS=69.0 N=0.446 )
\r
5441 *SRC=DDZX9702W;DI_DDZX9702W;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. zener
\r
5443 .SUBCKT DI_DDZX9702W 1 2
\r
5448 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10
\r
5449 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
\r
5450 .MODEL DR D ( IS=1.10f RS=69.0 N=0.446 )
\r
5453 *SRC=DDZX9703;DI_DDZX9703;Diodes;Zener 10V-50V; 16.0V 0.300W Diodes Inc. zener
\r
5455 .SUBCKT DI_DDZX9703 1 2
\r
5460 .MODEL DF D ( IS=7.72p RS=30.2 N=1.10
\r
5461 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
5462 .MODEL DR D ( IS=1.54f RS=69.0 N=0.446 )
\r
5465 *SRC=DDZX9703TS;DI_DDZX9703TS;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. zener
\r
5467 .SUBCKT DI_DDZX9703TS 1 2
\r
5472 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10
\r
5473 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
5474 .MODEL DR D ( IS=1.03f RS=69.0 N=0.446 )
\r
5477 *SRC=DDZX9703W;DI_DDZX9703W;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc. zener
\r
5479 .SUBCKT DI_DDZX9703W 1 2
\r
5484 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10
\r
5485 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
5486 .MODEL DR D ( IS=1.03f RS=69.0 N=0.446 )
\r
5489 *SRC=DDZX9705;DI_DDZX9705;Diodes;Zener 10V-50V; 18.0V 0.300W Diodes Inc. zener
\r
5491 .SUBCKT DI_DDZX9705 1 2
\r
5496 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10
\r
5497 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r
5498 .MODEL DR D ( IS=1.37f RS=69.0 N=0.446 )
\r
5501 *SRC=DDZX9705TS;DI_DDZX9705TS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. zener
\r
5503 .SUBCKT DI_DDZX9705TS 1 2
\r
5508 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10
\r
5509 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r
5510 .MODEL DR D ( IS=9.16e-016 RS=69.0 N=0.446 )
\r
5513 *SRC=DDZX9705W;DI_DDZX9705W;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. zener
\r
5515 .SUBCKT DI_DDZX9705W 1 2
\r
5520 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10
\r
5521 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r
5522 .MODEL DR D ( IS=9.16e-016 RS=69.0 N=0.446 )
\r
5525 *SRC=DDZX9707;DI_DDZX9707;Diodes;Zener 10V-50V; 20.0V 0.300W Diodes Inc. zener
\r
5527 .SUBCKT DI_DDZX9707 1 2
\r
5532 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10
\r
5533 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r
5534 .MODEL DR D ( IS=1.24f RS=69.0 N=0.446 )
\r
5537 *SRC=DDZX9707TS;DI_DDZX9707TS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. zener
\r
5539 .SUBCKT DI_DDZX9707TS 1 2
\r
5544 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10
\r
5545 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r
5546 .MODEL DR D ( IS=8.24e-016 RS=69.0 N=0.446 )
\r
5549 *SRC=DDZX9707W;DI_DDZX9707W;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. zener
\r
5551 .SUBCKT DI_DDZX9707W 1 2
\r
5556 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10
\r
5557 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r
5558 .MODEL DR D ( IS=8.24e-016 RS=69.0 N=0.446 )
\r
5561 *SRC=DDZX9708;DI_DDZX9708;Diodes;Zener 10V-50V; 22.0V 0.300W Diodes Inc. zener
\r
5563 .SUBCKT DI_DDZX9708 1 2
\r
5568 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10
\r
5569 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r
5570 .MODEL DR D ( IS=1.12f RS=92.0 N=0.594 )
\r
5573 *SRC=DDZX9708TS;DI_DDZX9708TS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. zener
\r
5575 .SUBCKT DI_DDZX9708TS 1 2
\r
5580 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10
\r
5581 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r
5582 .MODEL DR D ( IS=7.49e-016 RS=92.0 N=0.594 )
\r
5585 *SRC=DDZX9708W;DI_DDZX9708W;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc. zener
\r
5587 .SUBCKT DI_DDZX9708W 1 2
\r
5592 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10
\r
5593 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r
5594 .MODEL DR D ( IS=7.49e-016 RS=92.0 N=0.594 )
\r
5597 *SRC=DDZX9709;DI_DDZX9709;Diodes;Zener 10V-50V; 24.0V 0.300W Diodes Inc. zener
\r
5599 .SUBCKT DI_DDZX9709 1 2
\r
5604 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10
\r
5605 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r
5606 .MODEL DR D ( IS=1.03f RS=92.0 N=0.594 )
\r
5609 *SRC=DDZX9709TS;DI_DDZX9709TS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. zener
\r
5611 .SUBCKT DI_DDZX9709TS 1 2
\r
5616 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10
\r
5617 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r
5618 .MODEL DR D ( IS=6.87e-016 RS=92.0 N=0.594 )
\r
5621 *SRC=DDZX9709W;DI_DDZX9709W;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc. zener
\r
5623 .SUBCKT DI_DDZX9709W 1 2
\r
5628 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10
\r
5629 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r
5630 .MODEL DR D ( IS=6.87e-016 RS=92.0 N=0.594 )
\r
5633 *SRC=DDZX9711;DI_DDZX9711;Diodes;Zener 10V-50V; 27.0V 0.300W Diodes Inc. zener
\r
5635 .SUBCKT DI_DDZX9711 1 2
\r
5640 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10
\r
5641 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
\r
5642 .MODEL DR D ( IS=9.16e-016 RS=92.0 N=0.594 )
\r
5645 *SRC=DDZX9711TS;DI_DDZX9711TS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. zener
\r
5647 .SUBCKT DI_DDZX9711TS 1 2
\r
5652 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10
\r
5653 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
\r
5654 .MODEL DR D ( IS=6.10e-016 RS=92.0 N=0.594 )
\r
5657 *SRC=DDZX9711W;DI_DDZX9711W;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc. zener
\r
5659 .SUBCKT DI_DDZX9711W 1 2
\r
5664 .MODEL DF D ( IS=3.05p RS=27.6 N=1.10
\r
5665 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
\r
5666 .MODEL DR D ( IS=6.10e-016 RS=92.0 N=0.594 )
\r
5669 *SRC=DDZX9712;DI_DDZX9712;Diodes;Zener 10V-50V; 28.0V 0.300W Diodes Inc. zener
\r
5671 .SUBCKT DI_DDZX9712 1 2
\r
5676 .MODEL DF D ( IS=4.41p RS=28.6 N=1.10
\r
5677 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
\r
5678 .MODEL DR D ( IS=8.83e-016 RS=92.0 N=0.594 )
\r
5681 *SRC=DDZX9712TS;DI_DDZX9712TS;Diodes;Zener 10V-50V; 28.0V 0.200W Diodes Inc. zener
\r
5683 .SUBCKT DI_DDZX9712TS 1 2
\r
5688 .MODEL DF D ( IS=2.94p RS=27.5 N=1.10
\r
5689 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
\r
5690 .MODEL DR D ( IS=5.89e-016 RS=92.0 N=0.594 )
\r
5693 *SRC=DDZX9712W;DI_DDZX9712W;Diodes;Zener 10V-50V; 28.0V 0.200W Diodes Inc. zener
\r
5695 .SUBCKT DI_DDZX9712W 1 2
\r
5700 .MODEL DF D ( IS=2.94p RS=27.5 N=1.10
\r
5701 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
\r
5702 .MODEL DR D ( IS=5.89e-016 RS=92.0 N=0.594 )
\r
5705 *SRC=DDZX9713;DI_DDZX9713;Diodes;Zener 10V-50V; 30.0V 0.300W Diodes Inc. zener
\r
5707 .SUBCKT DI_DDZX9713 1 2
\r
5712 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10
\r
5713 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
5714 .MODEL DR D ( IS=8.24e-016 RS=92.0 N=0.594 )
\r
5717 *SRC=DDZX9713TS;DI_DDZX9713TS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. zener
\r
5719 .SUBCKT DI_DDZX9713TS 1 2
\r
5724 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10
\r
5725 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
5726 .MODEL DR D ( IS=5.49e-016 RS=92.0 N=0.594 )
\r
5729 *SRC=DDZX9713W;DI_DDZX9713W;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc. zener
\r
5731 .SUBCKT DI_DDZX9713W 1 2
\r
5736 .MODEL DF D ( IS=2.75p RS=27.3 N=1.10
\r
5737 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
5738 .MODEL DR D ( IS=5.49e-016 RS=92.0 N=0.594 )
\r
5741 *SRC=DDZX9714;DI_DDZX9714;Diodes;Zener 10V-50V; 33.0V 0.300W Diodes Inc. zener
\r
5743 .SUBCKT DI_DDZX9714 1 2
\r
5748 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10
\r
5749 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
5750 .MODEL DR D ( IS=7.49e-016 RS=1.35k N=3.00 )
\r
5753 *SRC=DDZX9714TS;DI_DDZX9714TS;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. zener
\r
5755 .SUBCKT DI_DDZX9714TS 1 2
\r
5760 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10
\r
5761 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
5762 .MODEL DR D ( IS=4.99e-016 RS=1.35k N=3.00 )
\r
5765 *SRC=DDZX9714W;DI_DDZX9714W;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc. zener
\r
5767 .SUBCKT DI_DDZX9714W 1 2
\r
5772 .MODEL DF D ( IS=2.50p RS=27.0 N=1.10
\r
5773 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
5774 .MODEL DR D ( IS=4.99e-016 RS=1.35k N=3.00 )
\r
5777 *SRC=DDZX9715;DI_DDZX9715;Diodes;Zener 10V-50V; 36.0V 0.300W Diodes Inc. zener
\r
5779 .SUBCKT DI_DDZX9715 1 2
\r
5784 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10
\r
5785 + CJO=13.6p VJ=1.00 M=0.330 TT=50.1n )
\r
5786 .MODEL DR D ( IS=6.87e-016 RS=4.45k N=3.00 )
\r
5789 *SRC=DDZX9715TS;DI_DDZX9715TS;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. zener
\r
5791 .SUBCKT DI_DDZX9715TS 1 2
\r
5796 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10
\r
5797 + CJO=13.1p VJ=1.00 M=0.330 TT=50.1n )
\r
5798 .MODEL DR D ( IS=4.58e-016 RS=1.45k N=3.00 )
\r
5801 *SRC=DDZX9715W;DI_DDZX9715W;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc. zener
\r
5803 .SUBCKT DI_DDZX9715W 1 2
\r
5808 .MODEL DF D ( IS=2.29p RS=26.8 N=1.10
\r
5809 + CJO=13.1p VJ=1.00 M=0.330 TT=50.1n )
\r
5810 .MODEL DR D ( IS=4.58e-016 RS=1.45k N=3.00 )
\r
5813 *SRC=DDZX9716;DI_DDZX9716;Diodes;Zener 10V-50V; 39.0V 0.300W Diodes Inc. zener
\r
5815 .SUBCKT DI_DDZX9716 1 2
\r
5820 .MODEL DF D ( IS=3.17p RS=27.7 N=1.10
\r
5821 + CJO=24.5p VJ=1.00 M=0.330 TT=50.1n )
\r
5822 .MODEL DR D ( IS=6.34e-016 RS=4.45k N=3.00 )
\r
5825 *SRC=DDZX9716TS;DI_DDZX9716TS;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. zener
\r
5827 .SUBCKT DI_DDZX9716TS 1 2
\r
5832 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10
\r
5833 + CJO=12.8p VJ=1.00 M=0.330 TT=50.1n )
\r
5834 .MODEL DR D ( IS=4.23e-016 RS=1.45k N=3.00 )
\r
5837 *SRC=DDZX9716W;DI_DDZX9716W;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc. zener
\r
5839 .SUBCKT DI_DDZX9716W 1 2
\r
5844 .MODEL DF D ( IS=2.11p RS=26.5 N=1.10
\r
5845 + CJO=12.8p VJ=1.00 M=0.330 TT=50.1n )
\r
5846 .MODEL DR D ( IS=4.23e-016 RS=1.45k N=3.00 )
\r
5849 *SRC=DDZX9717;DI_DDZX9717;Diodes;Zener 10V-50V; 43.0V 0.300W Diodes Inc. zener
\r
5851 .SUBCKT DI_DDZX9717 1 2
\r
5856 .MODEL DF D ( IS=2.87p RS=27.4 N=1.10
\r
5857 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
5858 .MODEL DR D ( IS=5.75e-016 RS=6.25k N=3.00 )
\r
5861 *SRC=DDZX9V1C;DI_DDZX9V1C;Diodes;Zener <=10V; 9.10V 0.300W Diodes Inc. ZENER
\r
5863 .SUBCKT DI_DDZX9V1C 1 2
\r
5868 .MODEL DF D ( IS=13.6p RS=31.8 N=1.10
\r
5869 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n )
\r
5870 .MODEL DR D ( IS=2.72f RS=4.11 N=3.00 )
\r
5873 *SRC=DDZX9V1CTS;DI_DDZX9V1CTS;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER
\r
5875 .SUBCKT DI_DDZX9V1CTS 1 2
\r
5880 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10
\r
5881 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n )
\r
5882 .MODEL DR D ( IS=1.81f RS=4.11 N=3.00 )
\r
5885 *SRC=DDZX9V1CW;DI_DDZX9V1CW;Diodes;Zener <=10V; 9.10V 0.200W Diodes Inc. ZENER
\r
5887 .SUBCKT DI_DDZX9V1CW 1 2
\r
5892 .MODEL DF D ( IS=9.05p RS=30.7 N=1.10
\r
5893 + CJO=41.0p VJ=0.750 M=0.330 TT=50.1n )
\r
5894 .MODEL DR D ( IS=1.81f RS=4.11 N=3.00 )
\r
5897 *SRC=DZ23C10;DI_DZ23C10;Diodes;Zener <=10V; 10.0V 0.300W Diodes Inc. Per node. Device contains two
\r
5899 .SUBCKT DI_DZ23C10 1 2
\r
5904 .MODEL DF D ( IS=12.4p RS=31.6 N=1.10
\r
5905 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
\r
5907 *SRC=DZ23C11;DI_DZ23C11;Diodes;Zener 10V-50V; 11.0V 0.300W Diodes Inc. Per node. Device contains two
\r
5909 .SUBCKT DI_DZ23C11 1 2
\r
5914 .MODEL DF D ( IS=11.2p RS=31.3 N=1.10
\r
5915 + CJO=41.5p VJ=1.00 M=0.330 TT=50.1n )
\r
5917 *SRC=DZ23C12;DI_DZ23C12;Diodes;Zener 10V-50V; 12.0V 0.300W Diodes Inc. Per node. Device contains two
\r
5919 .SUBCKT DI_DZ23C12 1 2
\r
5924 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10
\r
5925 + CJO=39.0p VJ=1.00 M=0.330 TT=50.1n )
\r
5927 *SRC=DZ23C13;DI_DZ23C13;Diodes;Zener 10V-50V; 13.0V 0.300W Diodes Inc. Per node. Device contains two
\r
5929 .SUBCKT DI_DZ23C13 1 2
\r
5934 .MODEL DF D ( IS=9.51p RS=30.8 N=1.10
\r
5935 + CJO=37.7p VJ=1.00 M=0.330 TT=50.1n )
\r
5937 *SRC=DZ23C15;DI_DZ23C15;Diodes;Zener 10V-50V; 15.0V 0.300W Diodes Inc. Per node. Device contains two
\r
5939 .SUBCKT DI_DZ23C15 1 2
\r
5944 .MODEL DF D ( IS=8.24p RS=30.4 N=1.10
\r
5945 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n )
\r
5947 *SRC=DZ23C16;DI_DZ23C16;Diodes;Zener 10V-50V; 16.0V 0.300W Diodes Inc. Per node. Device contains two
\r
5949 .SUBCKT DI_DZ23C16 1 2
\r
5954 .MODEL DF D ( IS=7.72p RS=30.2 N=1.10
\r
5955 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )
\r
5957 *SRC=DZ23C18;DI_DZ23C18;Diodes;Zener 10V-50V; 18.0V 0.300W Diodes Inc. Per node. Device contains two
\r
5959 .SUBCKT DI_DZ23C18 1 2
\r
5964 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10
\r
5965 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )
\r
5967 *SRC=DZ23C20;DI_DZ23C20;Diodes;Zener 10V-50V; 20.0V 0.300W Diodes Inc. Per node. Device contains two
\r
5969 .SUBCKT DI_DZ23C20 1 2
\r
5974 .MODEL DF D ( IS=6.18p RS=29.6 N=1.10
\r
5975 + CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )
\r
5977 *SRC=DZ23C22;DI_DZ23C22;Diodes;Zener 10V-50V; 22.0V 0.300W Diodes Inc. Per node. Device contains two
\r
5979 .SUBCKT DI_DZ23C22 1 2
\r
5984 .MODEL DF D ( IS=5.62p RS=29.3 N=1.10
\r
5985 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
5987 *SRC=DZ23C24;DI_DZ23C24;Diodes;Zener 10V-50V; 24.0V 0.300W Diodes Inc. Per node. Device contains two
\r
5989 .SUBCKT DI_DZ23C24 1 2
\r
5994 .MODEL DF D ( IS=5.15p RS=29.1 N=1.10
\r
5995 + CJO=21.4p VJ=1.00 M=0.330 TT=50.1n )
\r
5997 *SRC=DZ23C27;DI_DZ23C27;Diodes;Zener 10V-50V; 27.0V 0.300W Diodes Inc. Per node. Device contains two
\r
5999 .SUBCKT DI_DZ23C27 1 2
\r
6004 .MODEL DF D ( IS=4.58p RS=28.7 N=1.10
\r
6005 + CJO=20.7p VJ=1.00 M=0.330 TT=50.1n )
\r
6007 *SRC=DZ23C2V7;DI_DZ23C2V7;Diodes;Zener <=10V; 2.70V 0.300W Diodes Inc. Per node. Device contains two
\r
6009 .SUBCKT DI_DZ23C2V7 1 2
\r
6014 .MODEL DF D ( IS=45.8p RS=35.3 N=1.10
\r
6015 + CJO=450p VJ=0.750 M=0.330 TT=50.1n )
\r
6017 *SRC=DZ23C30;DI_DZ23C30;Diodes;Zener 10V-50V; 30.0V 0.300W Diodes Inc. Per node. Device contains two
\r
6019 .SUBCKT DI_DZ23C30 1 2
\r
6024 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10
\r
6025 + CJO=19.5p VJ=1.00 M=0.330 TT=50.1n )
\r
6027 *SRC=DZ23C33;DI_DZ23C33;Diodes;Zener 10V-50V; 33.0V 0.300W Diodes Inc. Per node. Device contains two
\r
6029 .SUBCKT DI_DZ23C33 1 2
\r
6034 .MODEL DF D ( IS=3.75p RS=28.2 N=1.10
\r
6035 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
\r
6037 *SRC=DZ23C36;DI_DZ23C36;Diodes;Zener 10V-50V; 36.0V 0.300W Diodes Inc. Per node. Device contains two
\r
6039 .SUBCKT DI_DZ23C36 1 2
\r
6044 .MODEL DF D ( IS=3.43p RS=27.9 N=1.10
\r
6045 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r
6047 *SRC=DZ23C39;DI_DZ23C39;Diodes;Zener 10V-50V; 39.0V 0.300W Diodes Inc. Per node. Device contains two
\r
6049 .SUBCKT DI_DZ23C39 1 2
\r
6054 .MODEL DF D ( IS=3.17p RS=27.7 N=1.10
\r
6055 + CJO=17.0p VJ=1.00 M=0.330 TT=50.1n )
\r
6057 *SRC=DZ23C3V0;DI_DZ23C3V0;Diodes;Zener <=10V; 3.00V 0.300W Diodes Inc. Per node. Device contains two
\r
6059 .SUBCKT DI_DZ23C3V0 1 2
\r
6064 .MODEL DF D ( IS=41.2p RS=35.0 N=1.10
\r
6065 + CJO=417p VJ=0.750 M=0.330 TT=50.1n )
\r
6067 *SRC=DZ23C3V3;DI_DZ23C3V3;Diodes;Zener <=10V; 3.30V 0.300W Diodes Inc. Per node. Device contains two
\r
6069 .SUBCKT DI_DZ23C3V3 1 2
\r
6074 .MODEL DF D ( IS=37.5p RS=34.7 N=1.10
\r
6075 + CJO=397p VJ=0.750 M=0.330 TT=50.1n )
\r
6077 *SRC=DZ23C3V6;DI_DZ23C3V6;Diodes;Zener <=10V; 3.60V 0.300W Diodes Inc. Per node. Device contains two
\r
6079 .SUBCKT DI_DZ23C3V6 1 2
\r
6084 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10
\r
6085 + CJO=384p VJ=0.750 M=0.330 TT=50.1n )
\r
6087 *SRC=DZ23C3V9;DI_DZ23C3V9;Diodes;Zener <=10V; 3.60V 0.300W Diodes Inc. Per node. Device contains two
\r
6089 .SUBCKT DI_DZ23C3V9 1 2
\r
6094 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10
\r
6095 + CJO=370p VJ=0.750 M=0.330 TT=50.1n )
\r
6097 *SRC=DZ23C43;DI_DZ23C43;Diodes;Zener 10V-50V; 43.0V 0.300W Diodes Inc. Per node. Device contains two
\r
6099 .SUBCKT DI_DZ23C43 1 2
\r
6104 .MODEL DF D ( IS=2.87p RS=27.4 N=1.10
\r
6105 + CJO=16.7p VJ=1.00 M=0.330 TT=50.1n )
\r
6107 *SRC=DZ23C47;DI_DZ23C47;Diodes;Zener 10V-50V; 47.0V 0.300W Diodes Inc. Per node. Device contains two
\r
6109 .SUBCKT DI_DZ23C47 1 2
\r
6114 .MODEL DF D ( IS=2.63p RS=27.2 N=1.10
\r
6115 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r
6117 *SRC=DZ23C4V3;DI_DZ23C4V3;Diodes;Zener <=10V; 4.30V 0.300W Diodes Inc. Per node. Device contains two
\r
6119 .SUBCKT DI_DZ23C4V3 1 2
\r
6124 .MODEL DF D ( IS=28.7p RS=34.0 N=1.10
\r
6125 + CJO=357p VJ=0.750 M=0.330 TT=50.1n )
\r
6127 *SRC=DZ23C4V7;DI_DZ23C4V7;Diodes;Zener <=10V; 4.70V 0.300W Diodes Inc. Per node. Device contains two
\r
6129 .SUBCKT DI_DZ23C4V7 1 2
\r
6134 .MODEL DF D ( IS=26.3p RS=33.7 N=1.10
\r
6135 + CJO=350p VJ=0.750 M=0.330 TT=50.1n )
\r
6137 *SRC=DZ23C51;DI_DZ23C51;Diodes;Zener >50V; 51.0V 0.300W Diodes Inc. Per node. Device contains two
\r
6139 .SUBCKT DI_DZ23C51 1 2
\r
6144 .MODEL DF D ( IS=2.42p RS=26.9 N=1.10
\r
6145 + CJO=16.2p VJ=1.00 M=0.330 TT=50.1n )
\r
6147 *SRC=DZ23C5V1;DI_DZ23C5V1;Diodes;Zener <=10V; 5.10V 0.300W Diodes Inc. Per node. Device contains two
\r
6149 .SUBCKT DI_DZ23C5V1 1 2
\r
6154 .MODEL DF D ( IS=24.2p RS=33.5 N=1.10
\r
6155 + CJO=132p VJ=0.750 M=0.330 TT=50.1n )
\r
6157 *SRC=DZ23C5V6;DI_DZ23C5V6;Diodes;Zener <=10V; 5.60V 0.300W Diodes Inc. Per node. Device contains two
\r
6159 .SUBCKT DI_DZ23C5V6 1 2
\r
6164 .MODEL DF D ( IS=22.1p RS=33.2 N=1.10
\r
6165 + CJO=102p VJ=0.750 M=0.330 TT=50.1n )
\r
6167 *SRC=DZ23C6V2;DI_DZ23C6V2;Diodes;Zener <=10V; 6.20V 0.300W Diodes Inc. Per node. Device contains two
\r
6169 .SUBCKT DI_DZ23C6V2 1 2
\r
6174 .MODEL DF D ( IS=19.9p RS=32.9 N=1.10
\r
6175 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
\r
6177 *SRC=DZ23C6V8;DI_DZ23C6V8;Diodes;Zener <=10V; 6.80V 0.300W Diodes Inc. Per node. Device contains two
\r
6179 .SUBCKT DI_DZ23C6V8 1 2
\r
6184 .MODEL DF D ( IS=18.2p RS=32.7 N=1.10
\r
6185 + CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
\r
6187 *SRC=DZ23C7V5;DI_DZ23C7V5;Diodes;Zener <=10V; 7.50V 0.300W Diodes Inc. Per node. Device contains two
\r
6189 .SUBCKT DI_DZ23C7V5 1 2
\r
6194 .MODEL DF D ( IS=16.5p RS=32.4 N=1.10
\r
6195 + CJO=59.5p VJ=0.750 M=0.330 TT=50.1n )
\r
6197 *SRC=DZ23C8V2;DI_DZ23C8V2;Diodes;Zener <=10V; 8.20V 0.300W Diodes Inc. Per node. Device contains two
\r
6199 .SUBCKT DI_DZ23C8V2 1 2
\r
6204 .MODEL DF D ( IS=15.1p RS=32.1 N=1.10
\r
6205 + CJO=54.2p VJ=0.750 M=0.330 TT=50.1n )
\r
6207 *SRC=DZ23C9V1;DI_DZ23C9V1;Diodes;Zener <=10V; 9.10V 0.300W Diodes Inc. Per node. Device contains two
\r
6209 .SUBCKT DI_DZ23C9V1 1 2
\r
6214 .MODEL DF D ( IS=13.6p RS=31.8 N=1.10
\r
6215 + CJO=48.9p VJ=0.750 M=0.330 TT=50.1n )
\r
6217 *SRC=MMBZ5221B;DI_MMBZ5221B;Diodes;Zener <=10V; 2.40V 0.350W Diodes Inc.
\r
6219 .SUBCKT DI_MMBZ5221B 1 2
\r
6224 .MODEL DF D ( IS=60.1p RS=36.1 N=1.10
\r
6225 + CJO=205p VJ=0.750 M=0.330 TT=50.1n )
\r
6226 .MODEL DR D ( IS=12.0f RS=26.1 N=3.00 )
\r
6229 *SRC=MMBZ5221BS;DI_MMBZ5221BS;Diodes;Zener <=10V; 2.40V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg.
\r
6231 .SUBCKT DI_MMBZ5221BS 1 2
\r
6236 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10
\r
6237 + CJO=340p VJ=0.750 M=0.330 TT=50.1n )
\r
6239 *SRC=MMBZ5221BT;DI_MMBZ5221BT;Diodes;Zener <=10V; 2.40V 0.150W Diodes
\r
6242 .SUBCKT DI_MMBZ5221BT 1 2
\r
6247 .MODEL DF D ( IS=25.7p RS=33.7 N=1.10
\r
6248 + CJO=205p VJ=0.750 M=0.330 TT=50.1n )
\r
6250 *SRC=MMBZ5221BTS;DI_MMBZ5221BTS;Diodes;Zener <=10V; 2.40V 0.200W Diodes
\r
6251 Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5221BTS 1 2
\r
6256 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10
\r
6257 + CJO=340p VJ=0.750 M=0.330 TT=50.1n )
\r
6259 *SRC=MMBZ5221BW;DI_MMBZ5221BW;Diodes;Zener <=10V; 2.40V 0.200W
\r
6262 .SUBCKT DI_MMBZ5221BW 1 2
\r
6267 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10
\r
6268 + CJO=205p VJ=0.750 M=0.330 TT=50.1n )
\r
6270 *SRC=MMBZ5223B;DI_MMBZ5223B;Diodes;Zener <=10V; 2.70V 0.350W Diodes Inc.
\r
6272 .SUBCKT DI_MMBZ5223B 1 2
\r
6277 .MODEL DF D ( IS=53.4p RS=35.7 N=1.10
\r
6278 + CJO=172p VJ=0.750 M=0.330 TT=50.1n )
\r
6279 .MODEL DR D ( IS=10.7f RS=26.1 N=3.00 )
\r
6282 *SRC=MMBZ5223BS;DI_MMBZ5223BS;Diodes;Zener <=10V; 2.70V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg.
\r
6284 .SUBCKT DI_MMBZ5223BS 1 2
\r
6289 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10
\r
6290 + CJO=275p VJ=0.750 M=0.330 TT=50.1n )
\r
6292 *SRC=MMBZ5223BT;DI_MMBZ5223BT;Diodes;Zener <=10V; 2.70V 0.150W Diodes
\r
6295 .SUBCKT DI_MMBZ5223BT 1 2
\r
6300 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10
\r
6301 + CJO=172p VJ=0.750 M=0.330 TT=50.1n )
\r
6303 *SRC=MMBZ5223BTS;DI_MMBZ5223BTS;Diodes;Zener <=10V; 2.70V 0.200W Diodes
\r
6304 Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5223BTS 1 2
\r
6309 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10
\r
6310 + CJO=275p VJ=0.750 M=0.330 TT=50.1n )
\r
6312 *SRC=MMBZ5223BW;DI_MMBZ5223BW;Diodes;Zener <=10V; 2.70V 0.200W
\r
6315 .SUBCKT DI_MMBZ5223BW 1 2
\r
6320 .MODEL DF D ( IS=30.5p RS=34.1 N=1.10
\r
6321 + CJO=172p VJ=0.750 M=0.330 TT=50.1n )
\r
6323 *SRC=MMBZ5225B;DI_MMBZ5225B;Diodes;Zener <=10V; 3.00V 0.350W Diodes Inc.
\r
6325 .SUBCKT DI_MMBZ5225B 1 2
\r
6330 .MODEL DF D ( IS=48.1p RS=35.4 N=1.10
\r
6331 + CJO=147p VJ=0.750 M=0.330 TT=50.1n )
\r
6332 .MODEL DR D ( IS=9.61f RS=26.1 N=3.00 )
\r
6335 *SRC=MMBZ5225BS;DI_MMBZ5225BS;Diodes;Zener <=10V; 3.00V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg.
\r
6337 .SUBCKT DI_MMBZ5225BS 1 2
\r
6342 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10
\r
6343 + CJO=240p VJ=0.750 M=0.330 TT=50.1n )
\r
6345 *SRC=MMBZ5225BT;DI_MMBZ5225BT;Diodes;Zener <=10V; 3.00V 0.150W Diodes
\r
6348 .SUBCKT DI_MMBZ5225BT 1 2
\r
6353 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10
\r
6354 + CJO=147p VJ=0.750 M=0.330 TT=50.1n )
\r
6356 *SRC=MMBZ5225BTS;DI_MMBZ5225BTS;Diodes;Zener <=10V; 3.00V 0.200W Diodes
\r
6357 Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5225BTS 1 2
\r
6362 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10
\r
6363 + CJO=240p VJ=0.750 M=0.330 TT=50.1n )
\r
6365 *SRC=MMBZ5225BW;DI_MMBZ5225BW;Diodes;Zener <=10V; 3.00V 0.200W
\r
6368 .SUBCKT DI_MMBZ5225BW 1 2
\r
6373 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10
\r
6374 + CJO=147p VJ=0.750 M=0.330 TT=50.1n )
\r
6376 *SRC=MMBZ5226B;DI_MMBZ5226B;Diodes;Zener <=10V; 3.30V 0.350W Diodes Inc.
\r
6378 .SUBCKT DI_MMBZ5226B 1 2
\r
6383 .MODEL DF D ( IS=43.7p RS=35.2 N=1.10
\r
6384 + CJO=127p VJ=0.750 M=0.330 TT=50.1n )
\r
6385 .MODEL DR D ( IS=8.74f RS=24.1 N=3.00 )
\r
6388 *SRC=MMBZ5226BS;DI_MMBZ5226BS;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg.
\r
6390 .SUBCKT DI_MMBZ5226BS 1 2
\r
6395 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10
\r
6396 + CJO=230p VJ=0.750 M=0.330 TT=50.1n )
\r
6398 *SRC=MMBZ5226BT;DI_MMBZ5226BT;Diodes;Zener <=10V; 3.30V 0.150W Diodes
\r
6401 .SUBCKT DI_MMBZ5226BT 1 2
\r
6406 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10
\r
6407 + CJO=127p VJ=0.750 M=0.330 TT=50.1n )
\r
6409 *SRC=MMBZ5226BTS;DI_MMBZ5226BTS;Diodes;Zener <=10V; 3.30V 0.200W Diodes
\r
6410 Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5226BTS 1 2
\r
6415 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10
\r
6416 + CJO=230p VJ=0.750 M=0.330 TT=50.1n )
\r
6418 *SRC=MMBZ5226BW;DI_MMBZ5226BW;Diodes;Zener <=10V; 3.30V 0.200W
\r
6421 .SUBCKT DI_MMBZ5226BW 1 2
\r
6426 .MODEL DF D ( IS=25.0p RS=33.6 N=1.10
\r
6427 + CJO=127p VJ=0.750 M=0.330 TT=50.1n )
\r
6429 *SRC=MMBZ5227B;DI_MMBZ5227B;Diodes;Zener <=10V; 3.60V 0.350W Diodes Inc.
\r
6431 .SUBCKT DI_MMBZ5227B 1 2
\r
6436 .MODEL DF D ( IS=40.1p RS=34.9 N=1.10
\r
6437 + CJO=112p VJ=0.750 M=0.330 TT=50.1n )
\r
6438 .MODEL DR D ( IS=8.01f RS=20.1 N=3.00 )
\r
6441 *SRC=MMBZ5227BS;DI_MMBZ5227BS;Diodes;Zener <=10V; 3.60V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg.
\r
6443 .SUBCKT DI_MMBZ5227BS 1 2
\r
6448 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10
\r
6449 + CJO=190p VJ=0.750 M=0.330 TT=50.1n )
\r
6451 *SRC=MMBZ5227BT;DI_MMBZ5227BT;Diodes;Zener <=10V; 3.60V 0.150W Diodes
\r
6454 .SUBCKT DI_MMBZ5227BT 1 2
\r
6459 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10
\r
6460 + CJO=112p VJ=0.750 M=0.330 TT=50.1n )
\r
6462 *SRC=MMBZ5227BTS;DI_MMBZ5227BTS;Diodes;Zener <=10V; 3.60V 0.200W Diodes
\r
6463 Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5227BTS 1 2
\r
6468 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10
\r
6469 + CJO=190p VJ=0.750 M=0.330 TT=50.1n )
\r
6471 *SRC=MMBZ5227BW;DI_MMBZ5227BW;Diodes;Zener <=10V; 3.60V 0.200W
\r
6474 .SUBCKT DI_MMBZ5227BW 1 2
\r
6479 .MODEL DF D ( IS=22.9p RS=33.3 N=1.10
\r
6480 + CJO=112p VJ=0.750 M=0.330 TT=50.1n )
\r
6482 *SRC=MMBZ5228B;DI_MMBZ5228B;Diodes;Zener <=10V; 3.90V 0.350W Diodes Inc.
\r
6484 .SUBCKT DI_MMBZ5228B 1 2
\r
6489 .MODEL DF D ( IS=37.0p RS=34.7 N=1.10
\r
6490 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n )
\r
6491 .MODEL DR D ( IS=7.39f RS=19.1 N=3.00 )
\r
6494 *SRC=MMBZ5228BS;DI_MMBZ5228BS;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg.
\r
6496 .SUBCKT DI_MMBZ5228BS 1 2
\r
6501 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10
\r
6502 + CJO=180p VJ=0.750 M=0.330 TT=50.1n )
\r
6504 *SRC=MMBZ5228BT;DI_MMBZ5228BT;Diodes;Zener <=10V; 3.90V 0.150W Diodes
\r
6507 .SUBCKT DI_MMBZ5228BT 1 2
\r
6512 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10
\r
6513 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n )
\r
6515 *SRC=MMBZ5228BTS;DI_MMBZ5228BTS;Diodes;Zener <=10V; 3.90V 0.200W Diodes
\r
6516 Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5228BTS 1 2
\r
6521 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10
\r
6522 + CJO=180p VJ=0.750 M=0.330 TT=50.1n )
\r
6524 *SRC=MMBZ5228BW;DI_MMBZ5228BW;Diodes;Zener <=10V; 3.90V 0.200W
\r
6527 .SUBCKT DI_MMBZ5228BW 1 2
\r
6532 .MODEL DF D ( IS=21.1p RS=33.1 N=1.10
\r
6533 + CJO=99.1p VJ=0.750 M=0.330 TT=50.1n )
\r
6535 *SRC=MMBZ5229B;DI_MMBZ5229B;Diodes;Zener <=10V; 4.30V 0.350W Diodes Inc.
\r
6537 .SUBCKT DI_MMBZ5229B 1 2
\r
6542 .MODEL DF D ( IS=33.5p RS=34.4 N=1.10
\r
6543 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )
\r
6544 .MODEL DR D ( IS=6.71f RS=18.1 N=3.00 )
\r
6547 *SRC=MMBZ5229BS;DI_MMBZ5229BS;Diodes;Zener <=10V; 4.30V 0.200W Diodes Inc. This model covers only one element. There are two elements per pkg.
\r
6549 .SUBCKT DI_MMBZ5229BS 1 2
\r
6554 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10
\r
6555 + CJO=170p VJ=0.750 M=0.330 TT=50.1n )
\r
6557 *SRC=MMBZ5229BT;DI_MMBZ5229BT;Diodes;Zener <=10V; 4.30V 0.150W Diodes
\r
6560 .SUBCKT DI_MMBZ5229BT 1 2
\r
6565 .MODEL DF D ( IS=14.4p RS=32.0 N=1.10
\r
6566 + CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )
\r
6568 *SRC=MMBZ5229BTS;DI_MMBZ5229BTS;Diodes;Zener <=10V; 4.30V 0.200W Diodes
\r
6569 Inc. This model covers only one element. There are three elements per pkg. *SYM=HZEN .SUBCKT DI_MMBZ5229BTS 1 2
\r
6574 .MODEL DF D ( IS=19.2p RS=32.8 N=1.10
\r
6575 + CJO=170p VJ=0.750 M=0.330 TT=50.1n )
\r
6831 *SRC=MMSZ5221B;DI_MMSZ5221B;Diodes;Zener <=10V; 2.40V 0.500W Diodes Inc. 500 mW Zener
\r
6833 .SUBCKT DI_MMSZ5221B 1 2
\r
6838 .MODEL DF D ( IS=85.8p RS=37.1 N=1.10
\r
6839 + CJO=794p VJ=0.750 M=0.330 TT=50.1n )
\r
6841 *SRC=MMSZ5221BS;DI_MMSZ5221BS;Diodes;Zener <=10V; 2.40V 0.500W Diodes Inc. 500 mW Zener
\r
6843 .SUBCKT DI_MMSZ5221BS 1 2
\r
6848 .MODEL DF D ( IS=85.8p RS=37.1 N=1.10
\r
6849 + CJO=794p VJ=0.750 M=0.330 TT=50.1n )
\r
6851 *SRC=MMSZ5223B;DI_MMSZ5223B;Diodes;Zener <=10V; 2.70V 0.500W Diodes Inc. 500 mW Zener
\r
6853 .SUBCKT DI_MMSZ5223B 1 2
\r
6858 .MODEL DF D ( IS=76.3p RS=36.7 N=1.10
\r
6859 + CJO=463p VJ=0.750 M=0.330 TT=50.1n )
\r
6861 *SRC=MMSZ5223BS;DI_MMSZ5223BS;Diodes;Zener <=10V; 2.70V 0.500W Diodes Inc. 500 mW Zener
\r
6863 .SUBCKT DI_MMSZ5223BS 1 2
\r
6868 .MODEL DF D ( IS=76.3p RS=36.7 N=1.10
\r
6869 + CJO=463p VJ=0.750 M=0.330 TT=50.1n )
\r
6871 *SRC=MMSZ5225B;DI_MMSZ5225B;Diodes;Zener <=10V; 3.00V 0.500W Diodes Inc. 500 mW Zener
\r
6873 .SUBCKT DI_MMSZ5225B 1 2
\r
6878 .MODEL DF D ( IS=68.7p RS=36.4 N=1.10
\r
6879 + CJO=397p VJ=0.750 M=0.330 TT=50.1n )
\r
6881 *SRC=MMSZ5225BS;DI_MMSZ5225BS;Diodes;Zener <=10V; 3.00V 0.500W Diodes Inc. 500 mW Zener
\r
6883 .SUBCKT DI_MMSZ5225BS 1 2
\r
6888 .MODEL DF D ( IS=68.7p RS=36.4 N=1.10
\r
6889 + CJO=397p VJ=0.750 M=0.330 TT=50.1n )
\r
6891 *SRC=MMSZ5226B;DI_MMSZ5226B;Diodes;Zener <=10V; 3.30V 0.500W Diodes Inc. 500 mW Zener
\r
6893 .SUBCKT DI_MMSZ5226B 1 2
\r
6898 .MODEL DF D ( IS=62.4p RS=36.2 N=1.10
\r
6899 + CJO=251p VJ=0.750 M=0.330 TT=50.1n )
\r
6901 *SRC=MMSZ5226BS;DI_MMSZ5226BS;Diodes;Zener <=10V; 3.30V 0.500W Diodes Inc. 500 mW Zener
\r
6903 .SUBCKT DI_MMSZ5226BS 1 2
\r
6908 .MODEL DF D ( IS=62.4p RS=36.2 N=1.10
\r
6909 + CJO=251p VJ=0.750 M=0.330 TT=50.1n )
\r
6911 *SRC=MMSZ5227B;DI_MMSZ5227B;Diodes;Zener <=10V; 3.60V 0.500W Diodes Inc. 500 mW Zener
\r
6913 .SUBCKT DI_MMSZ5227B 1 2
\r
6918 .MODEL DF D ( IS=57.2p RS=35.9 N=1.10
\r
6919 + CJO=238p VJ=0.750 M=0.330 TT=50.1n )
\r
6921 *SRC=MMSZ5227BS;DI_MMSZ5227BS;Diodes;Zener <=10V; 3.60V 0.500W Diodes Inc. 500 mW Zener
\r
6923 .SUBCKT DI_MMSZ5227BS 1 2
\r
6928 .MODEL DF D ( IS=57.2p RS=35.9 N=1.10
\r
6929 + CJO=238p VJ=0.750 M=0.330 TT=50.1n )
\r
6931 *SRC=MMSZ5228B;DI_MMSZ5228B;Diodes;Zener <=10V; 3.90V 0.500W Diodes Inc. 500 mW Zener
\r
6933 .SUBCKT DI_MMSZ5228B 1 2
\r
6938 .MODEL DF D ( IS=52.8p RS=35.7 N=1.10
\r
6939 + CJO=159p VJ=0.750 M=0.330 TT=50.1n )
\r
6941 *SRC=MMSZ5228BS;DI_MMSZ5228BS;Diodes;Zener <=10V; 3.90V 0.500W Diodes Inc. 500 mW Zener
\r
6943 .SUBCKT DI_MMSZ5228BS 1 2
\r
6948 .MODEL DF D ( IS=52.8p RS=35.7 N=1.10
\r
6949 + CJO=159p VJ=0.750 M=0.330 TT=50.1n )
\r
6951 *SRC=MMSZ5229B;DI_MMSZ5229B;Diodes;Zener <=10V; 4.30V 0.500W Diodes Inc. 500 mW Zener
\r
6953 .SUBCKT DI_MMSZ5229B 1 2
\r
6958 .MODEL DF D ( IS=47.9p RS=35.4 N=1.10
\r
6959 + CJO=145p VJ=0.750 M=0.330 TT=50.1n )
\r
6961 *SRC=MMSZ5229BS;DI_MMSZ5229BS;Diodes;Zener <=10V; 4.30V 0.500W Diodes Inc. 500 mW Zener
\r
6963 .SUBCKT DI_MMSZ5229BS 1 2
\r
6968 .MODEL DF D ( IS=47.9p RS=35.4 N=1.10
\r
6969 + CJO=145p VJ=0.750 M=0.330 TT=50.1n )
\r
6971 *SRC=MMSZ5230B;DI_MMSZ5230B;Diodes;Zener <=10V; 4.70V 0.500W Diodes Inc. 500 mW Zener
\r
6973 .SUBCKT DI_MMSZ5230B 1 2
\r
6978 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10
\r
6979 + CJO=139p VJ=0.750 M=0.330 TT=50.1n )
\r
6981 *SRC=MMSZ5230BS;DI_MMSZ5230BS;Diodes;Zener <=10V; 4.70V 0.500W Diodes Inc. 500 mW Zener
\r
6983 .SUBCKT DI_MMSZ5230BS 1 2
\r
6988 .MODEL DF D ( IS=43.8p RS=35.2 N=1.10
\r
6989 + CJO=139p VJ=0.750 M=0.330 TT=50.1n )
\r
6991 *SRC=MMSZ5231B;DI_MMSZ5231B;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. 500 mW Zener
\r
6993 .SUBCKT DI_MMSZ5231B 1 2
\r
6998 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10
\r
6999 + CJO=132p VJ=0.750 M=0.330 TT=50.1n )
\r
7001 *SRC=MMSZ5231BS;DI_MMSZ5231BS;Diodes;Zener <=10V; 5.10V 0.500W Diodes Inc. 500 mW Zener
\r
7003 .SUBCKT DI_MMSZ5231BS 1 2
\r
7008 .MODEL DF D ( IS=40.4p RS=34.9 N=1.10
\r
7009 + CJO=132p VJ=0.750 M=0.330 TT=50.1n )
\r
7011 *SRC=MMSZ5232B;DI_MMSZ5232B;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. 500 mW Zener
\r
7013 .SUBCKT DI_MMSZ5232B 1 2
\r
7018 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10
\r
7019 + CJO=106p VJ=0.750 M=0.330 TT=50.1n )
\r
7021 *SRC=MMSZ5232BS;DI_MMSZ5232BS;Diodes;Zener <=10V; 5.60V 0.500W Diodes Inc. 500 mW Zener
\r
7023 .SUBCKT DI_MMSZ5232BS 1 2
\r
7028 .MODEL DF D ( IS=36.8p RS=34.7 N=1.10
\r
7029 + CJO=106p VJ=0.750 M=0.330 TT=50.1n )
\r
7031 *SRC=MMSZ5233B;DI_MMSZ5233B;Diodes;Zener <=10V; 6.00V 0.500W Diodes Inc. 500 mW Zener
\r
7033 .SUBCKT DI_MMSZ5233B 1 2
\r
7038 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10
\r
7039 + CJO=83.3p VJ=0.750 M=0.330 TT=50.1n )
\r
7041 *SRC=MMSZ5233BS;DI_MMSZ5233BS;Diodes;Zener <=10V; 6.00V 0.500W Diodes Inc. 500 mW Zener
\r
7043 .SUBCKT DI_MMSZ5233BS 1 2
\r
7048 .MODEL DF D ( IS=34.3p RS=34.5 N=1.10
\r
7049 + CJO=83.3p VJ=0.750 M=0.330 TT=50.1n )
\r
7051 *SRC=MMSZ5234B;DI_MMSZ5234B;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. 500 mW Zener
\r
7053 .SUBCKT DI_MMSZ5234B 1 2
\r
7058 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10
\r
7059 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
\r
7061 *SRC=MMSZ5234BS;DI_MMSZ5234BS;Diodes;Zener <=10V; 6.20V 0.500W Diodes Inc. 500 mW Zener
\r
7063 .SUBCKT DI_MMSZ5234BS 1 2
\r
7068 .MODEL DF D ( IS=33.2p RS=34.4 N=1.10
\r
7069 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
\r
7071 *SRC=MMSZ5235B;DI_MMSZ5235B;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. 500 mW Zener
\r
7073 .SUBCKT DI_MMSZ5235B 1 2
\r
7078 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10
\r
7079 + CJO=71.4p VJ=0.750 M=0.330 TT=50.1n )
\r
7081 *SRC=MMSZ5235BS;DI_MMSZ5235BS;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. 500 mW Zener
\r
7083 .SUBCKT DI_MMSZ5235BS 1 2
\r
7088 .MODEL DF D ( IS=30.3p RS=34.1 N=1.10
\r
7089 + CJO=71.4p VJ=0.750 M=0.330 TT=50.1n )
\r
7091 *SRC=MMSZ5236B;DI_MMSZ5236B;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. 500 mW Zener
\r
7093 .SUBCKT DI_MMSZ5236B 1 2
\r
7098 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10
\r
7099 + CJO=58.2p VJ=0.750 M=0.330 TT=50.1n )
\r
7101 *SRC=MMSZ5236BS;DI_MMSZ5236BS;Diodes;Zener <=10V; 7.50V 0.500W Diodes Inc. 500 mW Zener
\r
7103 .SUBCKT DI_MMSZ5236BS 1 2
\r
7108 .MODEL DF D ( IS=27.5p RS=33.8 N=1.10
\r
7109 + CJO=58.2p VJ=0.750 M=0.330 TT=50.1n )
\r
7111 *SRC=MMSZ5237B;DI_MMSZ5237B;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. 500 mW Zener
\r
7113 .SUBCKT DI_MMSZ5237B 1 2
\r
7118 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10
\r
7119 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
\r
7121 *SRC=MMSZ5237BS;DI_MMSZ5237BS;Diodes;Zener <=10V; 8.20V 0.500W Diodes Inc. 500 mW Zener
\r
7123 .SUBCKT DI_MMSZ5237BS 1 2
\r
7128 .MODEL DF D ( IS=25.1p RS=33.6 N=1.10
\r
7129 + CJO=52.9p VJ=0.750 M=0.330 TT=50.1n )
\r
7131 *SRC=MMSZ5238B;DI_MMSZ5238B;Diodes;Zener <=10V; 8.70V 0.500W Diodes Inc. 500 mW Zener
\r
7133 .SUBCKT DI_MMSZ5238B 1 2
\r
7138 .MODEL DF D ( IS=23.7p RS=33.4 N=1.10
\r
7139 + CJO=51.6p VJ=0.750 M=0.330 TT=50.1n )
\r
7141 *SRC=MMSZ5238BS;DI_MMSZ5238BS;Diodes;Zener <=10V; 8.70V 0.500W Diodes Inc. 500 mW Zener
\r
7143 .SUBCKT DI_MMSZ5238BS 1 2
\r
7148 .MODEL DF D ( IS=23.7p RS=33.4 N=1.10
\r
7149 + CJO=51.6p VJ=0.750 M=0.330 TT=50.1n )
\r
7151 *SRC=MMSZ5239B;DI_MMSZ5239B;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. 500 mW Zener
\r
7153 .SUBCKT DI_MMSZ5239B 1 2
\r
7158 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10
\r
7159 + CJO=50.3p VJ=0.750 M=0.330 TT=50.1n )
\r
7161 *SRC=MMSZ5239BS;DI_MMSZ5239BS;Diodes;Zener <=10V; 9.10V 0.500W Diodes Inc. 500 mW Zener
\r
7163 .SUBCKT DI_MMSZ5239BS 1 2
\r
7168 .MODEL DF D ( IS=22.6p RS=33.3 N=1.10
\r
7169 + CJO=50.3p VJ=0.750 M=0.330 TT=50.1n )
\r
7171 *SRC=MMSZ5240B;DI_MMSZ5240B;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. 500 mW Zener
\r
7173 .SUBCKT DI_MMSZ5240B 1 2
\r
7178 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10
\r
7179 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
\r
7181 *SRC=MMSZ5240BS;DI_MMSZ5240BS;Diodes;Zener <=10V; 10.0V 0.500W Diodes Inc. 500 mW Zener
\r
7183 .SUBCKT DI_MMSZ5240BS 1 2
\r
7188 .MODEL DF D ( IS=20.6p RS=33.0 N=1.10
\r
7189 + CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
\r
7191 *SRC=MMSZ5241B;DI_MMSZ5241B;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. 500 mW Zener
\r
7193 .SUBCKT DI_MMSZ5241B 1 2
\r
7198 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10
\r
7199 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
\r
7201 *SRC=MMSZ5241BS;DI_MMSZ5241BS;Diodes;Zener 10V-50V; 11.0V 0.500W Diodes Inc. 500 mW Zener
\r
7203 .SUBCKT DI_MMSZ5241BS 1 2
\r
7208 .MODEL DF D ( IS=18.7p RS=32.7 N=1.10
\r
7209 + CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
\r
7211 *SRC=MMSZ5242B;DI_MMSZ5242B;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. 500 mW Zener
\r
7213 .SUBCKT DI_MMSZ5242B 1 2
\r
7218 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10
\r
7219 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n )
\r
7221 *SRC=MMSZ5242BS;DI_MMSZ5242BS;Diodes;Zener 10V-50V; 12.0V 0.500W Diodes Inc. 500 mW Zener
\r
7223 .SUBCKT DI_MMSZ5242BS 1 2
\r
7228 .MODEL DF D ( IS=17.2p RS=32.5 N=1.10
\r
7229 + CJO=31.4p VJ=1.00 M=0.330 TT=50.1n )
\r
7231 *SRC=MMSZ5243B;DI_MMSZ5243B;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. 500 mW Zener
\r
7233 .SUBCKT DI_MMSZ5243B 1 2
\r
7238 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10
\r
7239 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )
\r
7241 *SRC=MMSZ5243BS;DI_MMSZ5243BS;Diodes;Zener 10V-50V; 13.0V 0.500W Diodes Inc. 500 mW Zener
\r
7243 .SUBCKT DI_MMSZ5243BS 1 2
\r
7248 .MODEL DF D ( IS=15.8p RS=32.3 N=1.10
\r
7249 + CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )
\r
7251 *SRC=MMSZ5245B;DI_MMSZ5245B;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. 500 mW Zener
\r
7253 .SUBCKT DI_MMSZ5245B 1 2
\r
7258 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10
\r
7259 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )
\r
7261 *SRC=MMSZ5245BS;DI_MMSZ5245BS;Diodes;Zener 10V-50V; 15.0V 0.500W Diodes Inc. 500 mW Zener
\r
7263 .SUBCKT DI_MMSZ5245BS 1 2
\r
7268 .MODEL DF D ( IS=13.7p RS=31.9 N=1.10
\r
7269 + CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )
\r
7271 *SRC=MMSZ5246B;DI_MMSZ5246B;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. 500 mW Zener
\r
7273 .SUBCKT DI_MMSZ5246B 1 2
\r
7278 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10
\r
7279 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n )
\r
7281 *SRC=MMSZ5246BS;DI_MMSZ5246BS;Diodes;Zener 10V-50V; 16.0V 0.500W Diodes Inc. 500 mW Zener
\r
7283 .SUBCKT DI_MMSZ5246BS 1 2
\r
7288 .MODEL DF D ( IS=12.9p RS=31.7 N=1.10
\r
7289 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n )
\r
7291 *SRC=MMSZ5248B;DI_MMSZ5248B;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. 500 mW Zener
\r
7293 .SUBCKT DI_MMSZ5248B 1 2
\r
7298 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10
\r
7299 + CJO=25.8p VJ=1.00 M=0.330 TT=50.1n )
\r
7301 *SRC=MMSZ5248BS;DI_MMSZ5248BS;Diodes;Zener 10V-50V; 18.0V 0.500W Diodes Inc. 500 mW Zener
\r
7303 .SUBCKT DI_MMSZ5248BS 1 2
\r
7308 .MODEL DF D ( IS=11.4p RS=31.3 N=1.10
\r
7309 + CJO=25.8p VJ=1.00 M=0.330 TT=50.1n )
\r
7311 *SRC=MMSZ5250B;DI_MMSZ5250B;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. 500 mW Zener
\r
7313 .SUBCKT DI_MMSZ5250B 1 2
\r
7318 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10
\r
7319 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
\r
7321 *SRC=MMSZ5250BS;DI_MMSZ5250BS;Diodes;Zener 10V-50V; 20.0V 0.500W Diodes Inc. 500 mW Zener
\r
7323 .SUBCKT DI_MMSZ5250BS 1 2
\r
7328 .MODEL DF D ( IS=10.3p RS=31.0 N=1.10
\r
7329 + CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
\r
7331 *SRC=MMSZ5251B;DI_MMSZ5251B;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. 500 mW Zener
\r
7333 .SUBCKT DI_MMSZ5251B 1 2
\r
7338 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10
\r
7339 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
\r
7341 *SRC=MMSZ5251BS;DI_MMSZ5251BS;Diodes;Zener 10V-50V; 22.0V 0.500W Diodes Inc. 500 mW Zener
\r
7343 .SUBCKT DI_MMSZ5251BS 1 2
\r
7348 .MODEL DF D ( IS=9.36p RS=30.8 N=1.10
\r
7349 + CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
\r
7351 *SRC=MMSZ5252B;DI_MMSZ5252B;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. 500 mW Zener
\r
7353 .SUBCKT DI_MMSZ5252B 1 2
\r
7358 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10
\r
7359 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r
7361 *SRC=MMSZ5252BS;DI_MMSZ5252BS;Diodes;Zener 10V-50V; 24.0V 0.500W Diodes Inc. 500 mW Zener
\r
7363 .SUBCKT DI_MMSZ5252BS 1 2
\r
7368 .MODEL DF D ( IS=8.58p RS=30.5 N=1.10
\r
7369 + CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
\r
7371 *SRC=MMSZ5254B;DI_MMSZ5254B;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. 500 mW Zener
\r
7373 .SUBCKT DI_MMSZ5254B 1 2
\r
7378 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10
\r
7379 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r
7381 *SRC=MMSZ5254BS;DI_MMSZ5254BS;Diodes;Zener 10V-50V; 27.0V 0.500W Diodes Inc. 500 mW Zener
\r
7383 .SUBCKT DI_MMSZ5254BS 1 2
\r
7388 .MODEL DF D ( IS=7.63p RS=30.2 N=1.10
\r
7389 + CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
\r
7391 *SRC=MMSZ5255B;DI_MMSZ5255B;Diodes;Zener 10V-50V; 28.0V 0.500W Diodes Inc. 500 mW Zener
\r
7393 .SUBCKT DI_MMSZ5255B 1 2
\r
7398 .MODEL DF D ( IS=7.36p RS=30.1 N=1.10
\r
7399 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
\r
7401 *SRC=MMSZ5255BS;DI_MMSZ5255BS;Diodes;Zener 10V-50V; 28.0V 0.500W Diodes Inc. 500 mW Zener
\r
7403 .SUBCKT DI_MMSZ5255BS 1 2
\r
7408 .MODEL DF D ( IS=7.36p RS=30.1 N=1.10
\r
7409 + CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
\r
7411 *SRC=MMSZ5256B;DI_MMSZ5256B;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. 500 mW Zener
\r
7413 .SUBCKT DI_MMSZ5256B 1 2
\r
7418 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10
\r
7419 + CJO=14.5p VJ=1.00 M=0.330 TT=50.1n )
\r
7421 *SRC=MMSZ5256BS;DI_MMSZ5256BS;Diodes;Zener 10V-50V; 30.0V 0.500W Diodes Inc. 500 mW Zener
\r
7423 .SUBCKT DI_MMSZ5256BS 1 2
\r
7428 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10
\r
7429 + CJO=14.5p VJ=1.00 M=0.330 TT=50.1n )
\r
7431 *SRC=MMSZ5257B;DI_MMSZ5257B;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. 500 mW Zener
\r
7433 .SUBCKT DI_MMSZ5257B 1 2
\r
7438 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10
\r
7439 + CJO=14.1p VJ=1.00 M=0.330 TT=50.1n )
\r
7441 *SRC=MMSZ5257BS;DI_MMSZ5257BS;Diodes;Zener 10V-50V; 33.0V 0.500W Diodes Inc. 500 mW Zener
\r
7443 .SUBCKT DI_MMSZ5257BS 1 2
\r
7448 .MODEL DF D ( IS=6.24p RS=29.6 N=1.10
\r
7449 + CJO=14.1p VJ=1.00 M=0.330 TT=50.1n )
\r
7451 *SRC=MMSZ5258B;DI_MMSZ5258B;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. 500 mW Zener
\r
7453 .SUBCKT DI_MMSZ5258B 1 2
\r
7458 .MODEL DF D ( IS=5.72p RS=29.4 N=1.10
\r
7459 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
7461 *SRC=MMSZ5258BS;DI_MMSZ5258BS;Diodes;Zener 10V-50V; 36.0V 0.500W Diodes Inc. 500 mW Zener
\r
7463 .SUBCKT DI_MMSZ5258BS 1 2
\r
7468 .MODEL DF D ( IS=5.72p RS=29.4 N=1.10
\r
7469 + CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
\r
7471 *SRC=MMSZ5259B;DI_MMSZ5259B;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. 500 mW Zener
\r
7473 .SUBCKT DI_MMSZ5259B 1 2
\r
7478 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10
\r
7479 + CJO=13.7p VJ=1.00 M=0.330 TT=50.1n )
\r
7481 *SRC=MMSZ5259BS;DI_MMSZ5259BS;Diodes;Zener 10V-50V; 39.0V 0.500W Diodes Inc. 500 mW Zener
\r
7483 .SUBCKT DI_MMSZ5259BS 1 2
\r
7488 .MODEL DF D ( IS=5.28p RS=29.1 N=1.10
\r
7489 + CJO=13.7p VJ=1.00 M=0.330 TT=50.1n )
\r
7491 *SRC=QZX363C12;DI_QZX363C12;Diodes;Zener 10V-50V; 12.0V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four
\r
7493 .SUBCKT DI_QZX363C12 1 2
\r
7498 .MODEL DF D ( IS=6.87p RS=29.9 N=1.10
\r
7499 + CJO=26.4p VJ=1.00 M=0.330 TT=50.1n )
\r
7501 *SRC=QZX363C15;DI_QZX363C15;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four
\r
7503 .SUBCKT DI_QZX363C15 1 2
\r
7508 .MODEL DF D ( IS=5.49p RS=29.3 N=1.10
\r
7509 + CJO=25.8p VJ=1.00 M=0.330 TT=50.1n )
\r
7511 *SRC=QZX363C20;DI_QZX363C20;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four
\r
7513 .SUBCKT DI_QZX363C20 1 2
\r
7518 .MODEL DF D ( IS=4.12p RS=28.4 N=1.10
\r
7519 + CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
\r
7521 *SRC=QZX363C5V6;DI_QZX363C5V6;Diodes;Zener <=10V; 5.60V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four
\r
7523 .SUBCKT DI_QZX363C5V6 1 2
\r
7528 .MODEL DF D ( IS=14.7p RS=32.1 N=1.10
\r
7529 + CJO=92.6p VJ=0.750 M=0.330 TT=50.1n )
\r
7531 *SRC=QZX363C6V8;DI_QZX363C6V8;Diodes;Zener <=10V; 6.80V 0.200W Diodes Inc. Zener Diode Array, quad, one node of four
\r
7533 .SUBCKT DI_QZX363C6V8 1 2
\r
7538 .MODEL DF D ( IS=12.1p RS=31.5 N=1.10
\r
7539 + CJO=66.1p VJ=0.750 M=0.330 TT=50.1n )
\r
7541 *SRC=SMAZ10;DI_SMAZ10;Diodes;Zener <=10V; 10.0V 1.00W Diodes Inc. Zener
\r
7543 .SUBCKT DI_SMAZ10 1 2
\r
7548 .MODEL DF D ( IS=41.2p RS=0.823 N=1.10
\r
7549 + CJO=661p VJ=0.750 M=0.330 TT=50.1n )
\r
7550 .MODEL DR D ( IS=8.24f RS=0.161 N=1.04 )
\r
7553 *SRC=SMAZ12;DI_SMAZ12;Diodes;Zener 10V-50V; 12.0V 1.00W Diodes Inc.
\r
7556 .SUBCKT DI_SMAZ12 1 2
\r
7561 .MODEL DF D ( IS=34.3p RS=0.797 N=1.10
\r
7562 + CJO=377p VJ=1.00 M=0.330 TT=50.1n )
\r
7563 .MODEL DR D ( IS=6.87f RS=0.230 N=1.49 )
\r
7566 *SRC=SMAZ15;DI_SMAZ15;Diodes;Zener 10V-50V; 15.0V 1.00W Diodes Inc.
\r
7569 .SUBCKT DI_SMAZ15 1 2
\r
7574 .MODEL DF D ( IS=27.5p RS=0.765 N=1.10
\r
7575 + CJO=377p VJ=1.00 M=0.330 TT=50.1n )
\r
7576 .MODEL DR D ( IS=5.49f RS=0.230 N=1.49 )
\r
7579 *SRC=SMAZ16;DI_SMAZ16;Diodes;Zener 10V-50V; 16.0V 1.00W Diodes Inc.
\r
7582 .SUBCKT DI_SMAZ16 1 2
\r
7587 .MODEL DF D ( IS=25.7p RS=0.756 N=1.10
\r
7588 + CJO=377p VJ=1.00 M=0.330 TT=50.1n )
\r
7589 .MODEL DR D ( IS=5.15f RS=0.460 N=1.49 )
\r
7592 *SRC=SMAZ18;DI_SMAZ18;Diodes;Zener 10V-50V; 18.0V 1.00W Diodes Inc.
\r
7595 .SUBCKT DI_SMAZ18 1 2
\r
7600 .MODEL DF D ( IS=22.9p RS=0.739 N=1.10
\r
7601 + CJO=251p VJ=1.00 M=0.330 TT=50.1n )
\r
7602 .MODEL DR D ( IS=4.58f RS=0.575 N=1.86 )
\r
7605 *SRC=SMAZ20;DI_SMAZ20;Diodes;Zener 10V-50V; 20.0V 1.00W Diodes Inc.
\r
7608 .SUBCKT DI_SMAZ20 1 2
\r
7613 .MODEL DF D ( IS=20.6p RS=0.724 N=1.10
\r
7614 + CJO=251p VJ=1.00 M=0.330 TT=50.1n )
\r
7615 .MODEL DR D ( IS=4.12f RS=0.690 N=2.23 )
\r
7618 *SRC=SMAZ22;DI_SMAZ22;Diodes;Zener 10V-50V; 22.0V 1.00W Diodes Inc.
\r
7621 .SUBCKT DI_SMAZ22 1 2
\r
7626 .MODEL DF D ( IS=18.7p RS=0.711 N=1.10
\r
7627 + CJO=251p VJ=1.00 M=0.330 TT=50.1n )
\r
7628 .MODEL DR D ( IS=3.75f RS=0.736 N=2.38 )
\r
7631 *SRC=SMAZ24;DI_SMAZ24;Diodes;Zener 10V-50V; 24.0V 1.00W Diodes Inc.
\r
7634 .SUBCKT DI_SMAZ24 1 2
\r
7639 .MODEL DF D ( IS=17.2p RS=0.698 N=1.10
\r
7640 + CJO=226p VJ=1.00 M=0.330 TT=50.1n )
\r
7641 .MODEL DR D ( IS=3.43f RS=0.920 N=2.97 )
\r
7644 *SRC=SMAZ27;DI_SMAZ27;Diodes;Zener 10V-50V; 27.0V 1.00W Diodes Inc.
\r
7647 .SUBCKT DI_SMAZ27 1 2
\r
7652 .MODEL DF D ( IS=15.3p RS=0.681 N=1.10
\r
7653 + CJO=226p VJ=1.00 M=0.330 TT=50.1n )
\r
7654 .MODEL DR D ( IS=3.05f RS=0.805 N=2.60 )
\r
7657 *SRC=SMAZ30;DI_SMAZ30;Diodes;Zener 10V-50V; 30.0V 1.00W Diodes Inc.
\r
7660 .SUBCKT DI_SMAZ30 1 2
\r
7665 .MODEL DF D ( IS=13.7p RS=0.666 N=1.10
\r
7666 + CJO=226p VJ=1.00 M=0.330 TT=50.1n )
\r
7667 .MODEL DR D ( IS=2.75f RS=2.39 N=3.00 )
\r
7670 *SRC=SMAZ33;DI_SMAZ33;Diodes;Zener 10V-50V; 33.0V 1.00W Diodes Inc.
\r
7673 .SUBCKT DI_SMAZ33 1 2
\r
7678 .MODEL DF D ( IS=12.5p RS=0.653 N=1.10
\r
7679 + CJO=189p VJ=1.00 M=0.330 TT=50.1n )
\r
7680 .MODEL DR D ( IS=2.50f RS=2.89 N=3.00 )
\r
7683 *SRC=SMAZ36;DI_SMAZ36;Diodes;Zener 10V-50V; 36.0V 1.00W Diodes Inc.
\r
7686 .SUBCKT DI_SMAZ36 1 2
\r
7691 .MODEL DF D ( IS=11.4p RS=0.640 N=1.10
\r
7692 + CJO=189p VJ=1.00 M=0.330 TT=50.1n )
\r
7693 .MODEL DR D ( IS=2.29f RS=1.61 N=2.08 )
\r
7696 *SRC=SMAZ39;DI_SMAZ39;Diodes;Zener 10V-50V; 39.0V 1.00W Diodes Inc.
\r
7699 .SUBCKT DI_SMAZ39 1 2
\r
7704 .MODEL DF D ( IS=10.6p RS=0.629 N=1.10
\r
7705 + CJO=189p VJ=1.00 M=0.330 TT=50.1n )
\r
7706 .MODEL DR D ( IS=2.11f RS=1.84 N=2.38 )
\r
7709 *SRC=SMAZ5V1;DI_SMAZ5V1;Diodes;Zener <=10V; 5.10V 1.00W Diodes Inc.
\r
7712 .SUBCKT DI_SMAZ5V1 1 2
\r
7717 .MODEL DF D ( IS=80.8p RS=0.919 N=1.10
\r
7718 + CJO=1.06n VJ=0.750 M=0.330 TT=50.1n )
\r
7719 .MODEL DR D ( IS=16.2f RS=69.0m N=0.892 )
\r
7722 *SRC=SMAZ6V2;DI_SMAZ6V2;Diodes;Zener <=10V; 6.20V 1.00W Diodes Inc.
\r
7725 .SUBCKT DI_SMAZ6V2 1 2
\r
7730 .MODEL DF D ( IS=66.5p RS=0.891 N=1.10
\r
7731 + CJO=1.06n VJ=0.750 M=0.330 TT=50.1n )
\r
7732 .MODEL DR D ( IS=13.3f RS=92.0m N=1.19 )
\r
7735 *SRC=SMAZ6V2;DI_SMAZ6V2;Diodes;Zener <=10V; 6.20V 1.00W Diodes Inc.
\r
7738 .SUBCKT DI_SMAZ6V2 1 2
\r
7743 .MODEL DF D ( IS=66.5p RS=0.891 N=1.10
\r
7744 + CJO=1.06n VJ=0.750 M=0.330 TT=50.1n )
\r
7745 .MODEL DR D ( IS=13.3f RS=92.0m N=1.19 )
\r
7748 *SRC=SMAZ6V8;DI_SMAZ6V8;Diodes;Zener <=10V; 6.80V 1.00W Diodes Inc.
\r
7751 .SUBCKT DI_SMAZ6V8 1 2
\r
7756 .MODEL DF D ( IS=60.6p RS=0.878 N=1.10
\r
7757 + CJO=926p VJ=0.750 M=0.330 TT=50.1n )
\r
7758 .MODEL DR D ( IS=12.1f RS=92.0m N=1.19 )
\r
7761 *SRC=SMAZ7V5;DI_SMAZ7V5;Diodes;Zener <=10V; 7.50V 1.00W Diodes Inc.
\r
7764 .SUBCKT DI_SMAZ7V5 1 2
\r
7769 .MODEL DF D ( IS=54.9p RS=0.864 N=1.10
\r
7770 + CJO=926p VJ=0.750 M=0.330 TT=50.1n )
\r
7771 .MODEL DR D ( IS=11.0f RS=94.3m N=1.22 )
\r
7774 *SRC=SMAZ8V2;DI_SMAZ8V2;Diodes;Zener <=10V; 8.20V 1.00W Diodes Inc.
\r
7777 .SUBCKT DI_SMAZ8V2 1 2
\r
7782 .MODEL DF D ( IS=50.2p RS=0.851 N=1.10
\r
7783 + CJO=794p VJ=0.750 M=0.330 TT=50.1n )
\r
7784 .MODEL DR D ( IS=10.0f RS=0.115 N=1.49 )
\r
7787 *SRC=SMAZ9V1;DI_SMAZ9V1;Diodes;Zener <=10V; 9.10V 1.00W Diodes Inc.
\r
7790 .SUBCKT DI_SMAZ9V1 1 2
\r
7795 .MODEL DF D ( IS=45.3p RS=0.836 N=1.10
\r
7796 + CJO=661p VJ=0.750 M=0.330 TT=50.1n )
\r
7797 .MODEL DR D ( IS=9.05f RS=0.161 N=1.04 )
\r
7800 *SRC=ZM4728A;DI_ZM4728A;Diodes;Zener <=10V; 3.30V 1.00W Diodes Inc.
\r
7802 .SUBCKT DI_ZM4728A 1 2
\r
7807 .MODEL DF D ( IS=125p RS=2.98 N=1.10
\r
7808 + CJO=364p VJ=0.750 M=0.330 TT=50.1n )
\r
7809 .MODEL DR D ( IS=25.0f RS=8.98 N=3.00 )
\r
7812 *SRC=ZM4729A;DI_ZM4729A;Diodes;Zener <=10V; 3.60V 1.00W Diodes Inc.
\r
7814 .SUBCKT DI_ZM4729A 1 2
\r
7819 .MODEL DF D ( IS=114p RS=2.97 N=1.10
\r
7820 + CJO=319p VJ=0.750 M=0.330 TT=50.1n )
\r
7821 .MODEL DR D ( IS=22.9f RS=8.87 N=3.00 )
\r
7824 *SRC=ZM4730A;DI_ZM4730A;Diodes;Zener <=10V; 3.90V 1.00W Diodes Inc.
\r
7826 .SUBCKT DI_ZM4730A 1 2
\r
7831 .MODEL DF D ( IS=106p RS=2.96 N=1.10
\r
7832 + CJO=283p VJ=0.750 M=0.330 TT=50.1n )
\r
7833 .MODEL DR D ( IS=21.1f RS=7.79 N=3.00 )
\r
7836 *SRC=ZM4731A;DI_ZM4731A;Diodes;Zener <=10V; 4.30V 1.00W Diodes Inc.
\r
7838 .SUBCKT DI_ZM4731A 1 2
\r
7843 .MODEL DF D ( IS=95.8p RS=2.94 N=1.10
\r
7844 + CJO=244p VJ=0.750 M=0.330 TT=50.1n )
\r
7845 .MODEL DR D ( IS=19.2f RS=6.66 N=3.00 )
\r
7848 *SRC=ZM4732A;DI_ZM4732A;Diodes;Zener <=10V; 4.70V 1.00W Diodes Inc.
\r
7850 .SUBCKT DI_ZM4732A 1 2
\r
7855 .MODEL DF D ( IS=87.7p RS=2.93 N=1.10
\r
7856 + CJO=214p VJ=0.750 M=0.330 TT=50.1n )
\r
7857 .MODEL DR D ( IS=17.5f RS=6.53 N=3.00 )
\r
7860 *SRC=ZM4733A;DI_ZM4733A;Diodes;Zener <=10V; 5.10V 1.00W Diodes Inc.
\r
7862 .SUBCKT DI_ZM4733A 1 2
\r
7867 .MODEL DF D ( IS=80.8p RS=2.92 N=1.10
\r
7868 + CJO=189p VJ=0.750 M=0.330 TT=50.1n )
\r
7869 .MODEL DR D ( IS=16.2f RS=5.41 N=3.00 )
\r
7872 *SRC=ZM4734A;DI_ZM4734A;Diodes;Zener <=10V; 5.60V 1.00W Diodes Inc.
\r
7874 .SUBCKT DI_ZM4734A 1 2
\r
7879 .MODEL DF D ( IS=73.6p RS=2.91 N=1.10
\r
7880 + CJO=165p VJ=0.750 M=0.330 TT=50.1n )
\r
7881 .MODEL DR D ( IS=14.7f RS=3.27 N=3.00 )
\r
7884 *SRC=ZM4735A;DI_ZM4735A;Diodes;Zener <=10V; 6.20V 1.00W Diodes Inc.
\r
7886 .SUBCKT DI_ZM4735A 1 2
\r
7891 .MODEL DF D ( IS=66.5p RS=2.89 N=1.10
\r
7892 + CJO=141p VJ=0.750 M=0.330 TT=50.1n )
\r
7893 .MODEL DR D ( IS=13.3f RS=0.460 N=2.44 )
\r
7896 *SRC=ZM4736A;DI_ZM4736A;Diodes;Zener <=10V; 6.80V 1.00W Diodes Inc.
\r
7898 .SUBCKT DI_ZM4736A 1 2
\r
7903 .MODEL DF D ( IS=60.6p RS=2.88 N=1.10
\r
7904 + CJO=123p VJ=0.750 M=0.330 TT=50.1n )
\r
7905 .MODEL DR D ( IS=12.1f RS=1.40 N=3.00 )
\r
7908 *SRC=ZM4737A;DI_ZM4737A;Diodes;Zener <=10V; 7.50V 1.00W Diodes Inc.
\r
7910 .SUBCKT DI_ZM4737A 1 2
\r
7915 .MODEL DF D ( IS=54.9p RS=2.86 N=1.10
\r
7916 + CJO=106p VJ=0.750 M=0.330 TT=50.1n )
\r
7917 .MODEL DR D ( IS=11.0f RS=1.71 N=3.00 )
\r
7920 *SRC=ZM4738A;DI_ZM4738A;Diodes;Zener <=10V; 8.20V 1.00W Diodes Inc.
\r
7922 .SUBCKT DI_ZM4738A 1 2
\r
7927 .MODEL DF D ( IS=50.2p RS=2.85 N=1.10
\r
7928 + CJO=92.8p VJ=0.750 M=0.330 TT=50.1n )
\r
7929 .MODEL DR D ( IS=10.0f RS=1.99 N=3.00 )
\r
7932 *SRC=ZM4739A;DI_ZM4739A;Diodes;Zener <=10V; 9.10V 1.00W Diodes Inc.
\r
7934 .SUBCKT DI_ZM4739A 1 2
\r
7939 .MODEL DF D ( IS=45.3p RS=2.84 N=1.10
\r
7940 + CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
\r
7941 .MODEL DR D ( IS=9.05f RS=2.23 N=3.00 )
\r
7944 *SRC=ZM4740A;DI_ZM4740A;Diodes;Zener <=10V; 10.0V 1.00W Diodes Inc.
\r
7946 .SUBCKT DI_ZM4740A 1 2
\r
7951 .MODEL DF D ( IS=41.2p RS=2.82 N=1.10
\r
7952 + CJO=68.9p VJ=0.750 M=0.330 TT=50.1n )
\r
7953 .MODEL DR D ( IS=8.24f RS=3.89 N=3.00 )
\r
7956 *SRC=ZM4741A;DI_ZM4741A;Diodes;Zener 10V-50V; 11.0V 1.00W Diodes Inc.
\r
7958 .SUBCKT DI_ZM4741A 1 2
\r
7963 .MODEL DF D ( IS=37.5p RS=2.81 N=1.10
\r
7964 + CJO=101p VJ=1.00 M=0.330 TT=50.1n )
\r
7965 .MODEL DR D ( IS=7.49f RS=4.62 N=3.00 )
\r
7968 *SRC=ZM4742A;DI_ZM4742A;Diodes;Zener 10V-50V; 12.0V 1.00W Diodes Inc.
\r
7970 .SUBCKT DI_ZM4742A 1 2
\r
7975 .MODEL DF D ( IS=34.3p RS=2.80 N=1.10
\r
7976 + CJO=94.2p VJ=1.00 M=0.330 TT=50.1n )
\r
7977 .MODEL DR D ( IS=6.87f RS=5.30 N=3.00 )
\r
7980 *SRC=ZM4743A;DI_ZM4743A;Diodes;Zener 10V-50V; 13.0V 1.00W Diodes Inc.
\r
7982 .SUBCKT DI_ZM4743A 1 2
\r
7987 .MODEL DF D ( IS=31.7p RS=2.79 N=1.10
\r
7988 + CJO=88.1p VJ=1.00 M=0.330 TT=50.1n )
\r
7989 .MODEL DR D ( IS=6.34f RS=5.91 N=3.00 )
\r
7992 *SRC=ZM4744A;DI_ZM4744A;Diodes;Zener 10V-50V; 15.0V 1.00W Diodes Inc.
\r
7994 .SUBCKT DI_ZM4744A 1 2
\r
7999 .MODEL DF D ( IS=27.5p RS=2.77 N=1.10
\r
8000 + CJO=78.3p VJ=1.00 M=0.330 TT=50.1n )
\r
8001 .MODEL DR D ( IS=5.49f RS=9.43 N=3.00 )
\r
8004 *SRC=ZM4745A;DI_ZM4745A;Diodes;Zener 10V-50V; 16.0V 1.00W Diodes Inc.
\r
8006 .SUBCKT DI_ZM4745A 1 2
\r
8011 .MODEL DF D ( IS=25.7p RS=2.76 N=1.10
\r
8012 + CJO=74.4p VJ=1.00 M=0.330 TT=50.1n )
\r
8013 .MODEL DR D ( IS=5.15f RS=11.0 N=3.00 )
\r
8016 *SRC=ZM4746A;DI_ZM4746A;Diodes;Zener 10V-50V; 18.0V 1.00W Diodes Inc.
\r
8018 .SUBCKT DI_ZM4746A 1 2
\r
8023 .MODEL DF D ( IS=22.9p RS=2.74 N=1.10
\r
8024 + CJO=67.8p VJ=1.00 M=0.330 TT=50.1n )
\r
8025 .MODEL DR D ( IS=4.58f RS=14.4 N=3.00 )
\r
8028 *SRC=ZM4747A;DI_ZM4747A;Diodes;Zener 10V-50V; 20.0V 1.00W Diodes Inc.
\r
8030 .SUBCKT DI_ZM4747A 1 2
\r
8035 .MODEL DF D ( IS=20.6p RS=2.72 N=1.10
\r
8036 + CJO=62.5p VJ=1.00 M=0.330 TT=50.1n )
\r
8037 .MODEL DR D ( IS=4.12f RS=15.8 N=3.00 )
\r
8040 *SRC=ZM4748A;DI_ZM4748A;Diodes;Zener 10V-50V; 22.0V 1.00W Diodes Inc.
\r
8042 .SUBCKT DI_ZM4748A 1 2
\r
8047 .MODEL DF D ( IS=18.7p RS=2.71 N=1.10
\r
8048 + CJO=58.2p VJ=1.00 M=0.330 TT=50.1n )
\r
8049 .MODEL DR D ( IS=3.75f RS=16.2 N=3.00 )
\r
8052 *SRC=ZM4749A;DI_ZM4749A;Diodes;Zener 10V-50V; 24.0V 1.00W Diodes Inc.
\r
8054 .SUBCKT DI_ZM4749A 1 2
\r
8059 .MODEL DF D ( IS=17.2p RS=2.70 N=1.10
\r
8060 + CJO=54.6p VJ=1.00 M=0.330 TT=50.1n )
\r
8061 .MODEL DR D ( IS=3.43f RS=17.6 N=3.00 )
\r
8064 *SRC=ZM4750A;DI_ZM4750A;Diodes;Zener 10V-50V; 27.0V 1.00W Diodes Inc.
\r
8066 .SUBCKT DI_ZM4750A 1 2
\r
8071 .MODEL DF D ( IS=15.3p RS=2.68 N=1.10
\r
8072 + CJO=50.2p VJ=1.00 M=0.330 TT=50.1n )
\r
8073 .MODEL DR D ( IS=3.05f RS=26.8 N=3.00 )
\r
8076 *SRC=ZM4751A;DI_ZM4751A;Diodes;Zener 10V-50V; 30.0V 1.00W Diodes Inc.
\r
8078 .SUBCKT DI_ZM4751A 1 2
\r
8083 .MODEL DF D ( IS=13.7p RS=2.67 N=1.10
\r
8084 + CJO=46.7p VJ=1.00 M=0.330 TT=50.1n )
\r
8085 .MODEL DR D ( IS=2.75f RS=30.9 N=3.00 )
\r
8088 *SRC=ZM4752A;DI_ZM4752A;Diodes;Zener 10V-50V; 33.0V 1.00W Diodes Inc.
\r
8090 .SUBCKT DI_ZM4752A 1 2
\r
8095 .MODEL DF D ( IS=12.5p RS=2.65 N=1.10
\r
8096 + CJO=43.8p VJ=1.00 M=0.330 TT=50.1n )
\r
8097 .MODEL DR D ( IS=2.50f RS=34.6 N=3.00 )
\r
8100 *SRC=ZM4753A;DI_ZM4753A;Diodes;Zener 10V-50V; 36.0V 1.00W Diodes Inc.
\r
8102 .SUBCKT DI_ZM4753A 1 2
\r
8107 .MODEL DF D ( IS=11.4p RS=2.64 N=1.10
\r
8108 + CJO=41.4p VJ=1.00 M=0.330 TT=50.1n )
\r
8109 .MODEL DR D ( IS=2.29f RS=38.9 N=3.00 )
\r
8112 *SRC=ZM4754A;DI_ZM4754A;Diodes;Zener 10V-50V; 39.0V 1.00W Diodes Inc.
\r
8114 .SUBCKT DI_ZM4754A 1 2
\r
8119 .MODEL DF D ( IS=10.6p RS=2.63 N=1.10
\r
8120 + CJO=39.4p VJ=1.00 M=0.330 TT=50.1n )
\r
8121 .MODEL DR D ( IS=2.11f RS=48.0 N=3.00 )
\r
8124 *SRC=ZM4755A;DI_ZM4755A;Diodes;Zener 10V-50V; 43.0V 1.00W Diodes Inc.
\r
8126 .SUBCKT DI_ZM4755A 1 2
\r
8131 .MODEL DF D ( IS=9.58p RS=2.62 N=1.10
\r
8132 + CJO=37.1p VJ=1.00 M=0.330 TT=50.1n )
\r
8133 .MODEL DR D ( IS=1.92f RS=57.0 N=3.00 )
\r
8136 *SRC=ZM4756A;DI_ZM4756A;Diodes;Zener 10V-50V; 47.0V 1.00W Diodes Inc.
\r
8138 .SUBCKT DI_ZM4756A 1 2
\r
8143 .MODEL DF D ( IS=8.77p RS=2.60 N=1.10
\r
8144 + CJO=35.2p VJ=1.00 M=0.330 TT=50.1n )
\r
8145 .MODEL DR D ( IS=1.75f RS=65.9 N=3.00 )
\r
8148 *SRC=ZM4757A;DI_ZM4757A;Diodes;Zener >50V; 51.0V 1.00W Diodes Inc.
\r
8150 .SUBCKT DI_ZM4757A 1 2
\r
8155 .MODEL DF D ( IS=8.08p RS=2.59 N=1.10
\r
8156 + CJO=33.6p VJ=1.00 M=0.330 TT=50.1n )
\r
8157 .MODEL DR D ( IS=1.62f RS=79.5 N=3.00 )
\r
8160 *SRC=ZM4758A;DI_ZM4758A;Diodes;Zener >50V; 56.0V 1.00W Diodes Inc.
\r
8162 .SUBCKT DI_ZM4758A 1 2
\r
8167 .MODEL DF D ( IS=7.36p RS=2.58 N=1.10
\r
8168 + CJO=32.0p VJ=1.00 M=0.330 TT=50.1n )
\r
8169 .MODEL DR D ( IS=1.47f RS=92.7 N=3.00 )
\r
8172 *SRC=ZM4759A;DI_ZM4759A;Diodes;Zener >50V; 62.0V 1.00W Diodes Inc.
\r
8174 .SUBCKT DI_ZM4759A 1 2
\r
8179 .MODEL DF D ( IS=6.65p RS=2.56 N=1.10
\r
8180 + CJO=30.3p VJ=1.00 M=0.330 TT=50.1n )
\r
8181 .MODEL DR D ( IS=1.33f RS=106 N=3.00 )
\r
8184 *SRC=ZM4760A;DI_ZM4760A;Diodes;Zener >50V; 68.0V 1.00W Diodes Inc.
\r
8186 .SUBCKT DI_ZM4760A 1 2
\r
8191 .MODEL DF D ( IS=6.06p RS=2.55 N=1.10
\r
8192 + CJO=29.0p VJ=1.00 M=0.330 TT=50.1n )
\r
8193 .MODEL DR D ( IS=1.21f RS=129 N=3.00 )
\r
8196 *SRC=ZM4761A;DI_ZM4761A;Diodes;Zener >50V; 75.0V 1.00W Diodes Inc.
\r
8198 .SUBCKT DI_ZM4761A 1 2
\r
8203 .MODEL DF D ( IS=5.49p RS=2.54 N=1.10
\r
8204 + CJO=27.7p VJ=1.00 M=0.330 TT=50.1n )
\r
8205 .MODEL DR D ( IS=1.10f RS=151 N=3.00 )
\r
8208 *SRC=ZM4762A;DI_ZM4762A;Diodes;Zener >50V; 82.0V 1.00W Diodes Inc.
\r
8210 .SUBCKT DI_ZM4762A 1 2
\r
8215 .MODEL DF D ( IS=5.02p RS=2.52 N=1.10
\r
8216 + CJO=26.6p VJ=1.00 M=0.330 TT=50.1n )
\r
8217 .MODEL DR D ( IS=1.00f RS=174 N=3.00 )
\r
8220 *SRC=ZM4763A;DI_ZM4763A;Diodes;Zener >50V; 91.0V 1.00W Diodes Inc.
\r
8222 .SUBCKT DI_ZM4763A 1 2
\r
8227 .MODEL DF D ( IS=4.53p RS=2.51 N=1.10
\r
8228 + CJO=25.4p VJ=1.00 M=0.330 TT=50.1n )
\r
8229 .MODEL DR D ( IS=9.05e-016 RS=222 N=3.00 )
\r
8232 *SRC=ZM4764A;DI_ZM4764A;Diodes;Zener >50V; 100V 1.00W Diodes Inc.
\r
8234 .SUBCKT DI_ZM4764A 1 2
\r
8239 .MODEL DF D ( IS=4.12p RS=2.49 N=1.10
\r
8240 + CJO=24.5p VJ=1.00 M=0.330 TT=50.1n )
\r
8241 .MODEL DR D ( IS=8.24e-016 RS=319 N=3.00 )
\r
8244 *SRC=ZMM5235B;DI_ZMM5235B;Diodes;Zener <=10V; 6.80V 0.500W Diodes Inc. zener
\r
8246 .SUBCKT DI_ZMM5235B 1 2
\r
8251 .MODEL DF D ( IS=30.3p RS=4.28 N=1.10
\r
8252 + CJO=196p VJ=0.750 M=0.330 TT=50.1n )
\r
8253 .MODEL DR D ( IS=6.06f RS=1.15 N=2.97 )
\r
8256 *SRC=ZMM5260B;DI_ZMM5260B;Diodes;Zener 10V-50V; 43.0V 0.500W Diodes Inc. Zener
\r
8258 .SUBCKT DI_ZMM5260B 1 2
\r
8263 .MODEL DF D ( IS=4.79p RS=1.24 N=1.10
\r
8264 + CJO=26.0p VJ=1.00 M=0.330 TT=50.1n )
\r
8265 .MODEL DR D ( IS=9.58e-016 RS=16.0 N=3.00 )
\r
8268 *SRC=ZMM5262B;DI_ZMM5262B;Diodes;Zener >50V; 51.0V 0.500W Diodes Inc. Zener
\r
8270 .SUBCKT DI_ZMM5262B 1 2
\r
8275 .MODEL DF D ( IS=4.04p RS=1.24 N=1.10
\r
8276 + CJO=24.3p VJ=1.00 M=0.330 TT=50.1n )
\r
8277 .MODEL DR D ( IS=8.08e-016 RS=30.1 N=3.00 )
\r
8280 *SRC=1N4148;DI_1N4148;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. -
\r
8281 .MODEL DI_1N4148 D ( IS=222p RS=68.6m BV=75.0 IBV=1.00u
\r
8282 + CJO=4.00p M=0.333 N=1.65 TT=5.76n )
\r
8284 *SRC=1N4148W;1N4148W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
\r
8285 .MODEL 1N4148W D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u
\r
8286 + CJO=2.00p M=0.333 N=2.07 TT=5.76n )
\r
8288 *SRC=1N4148WS;1N4148WS;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
\r
8290 .MODEL 1N4148WS D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u
\r
8291 + CJO=2.00p M=0.333 N=2.07 TT=5.76n )
\r
8293 *SRC=1N4148WT;DI_1N4148WT;Diodes;Si; 80.0V 0.125A 4.00ns Diodes Inc.
\r
8295 .MODEL DI_1N4148WT D ( IS=111n RS=0.628 BV=80.0 IBV=1.00u
\r
8296 + CJO=2.00p M=0.333 N=1.70 TT=5.76n )
\r
8298 *SRC=1N4448HWS;DI_1N4448HWS;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc. Switching Diode
\r.MODEL DI_1N4448HWS D ( IS=24.7n RS=84.4m BV=80.0 IBV=100n
\r+ CJO=3.50p M=0.333 N=2.12 TT=5.76n )
\r
8300 *SRC=1N4448HWT;DI_1N4448HWT;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc.
\r
8302 .MODEL DI_1N4448HWT D ( IS=137f RS=0.168 BV=80.0 IBV=100n
\r
8303 + CJO=3.56p M=0.333 N=1.11 TT=5.76n )
\r
8305 *SRC=1N4448W;DI_1N4448W;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc.
\r
8306 .MODEL DI_1N4448W D ( IS=355p RS=0.168 BV=75.0 IBV=2.50u
\r
8307 + CJO=4.00p M=0.333 N=1.70 TT=5.76n )
\r
8309 *SRC=1N4448WS;DI_1N4448WS;Diodes;Si; 75.0V 0.500A 4.00ns Diodes Inc. Switching Diode
\r
8310 .MODEL DI_1N4448WS D ( IS=24.7n RS=84.4m BV=75.0 IBV=2.50u
\r
8311 + CJO=4.00p M=0.333 N=2.12 TT=5.76n )
\r
8313 *SRC=BAL99;DI_BAL99;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
\r
8315 .MODEL DI_BAL99 D ( IS=31.2n RS=0.360 BV=75.0 IBV=2.50u
\r
8316 + CJO=1.72p M=0.333 N=2.35 TT=5.76n )
\r
8318 *SRC=BAS116;DI_BAS116;Diodes;Si; 60.0V 0.215A 3.00us Diodes Inc.
\r
8320 .MODEL DI_BAS116 D ( IS=4.53u RS=0.383 BV=60.0 IBV=5.00n
\r
8321 + CJO=1.72p M=0.333 N=4.07 TT=4.32u )
\r
8323 *SRC=BAS116T;DI_BAS116T;Diodes;Si; 85.0V 0.215A 3.00us Diodes Inc. Switching Diode
\r
8324 .MODEL DI_BAS116T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n
\r
8325 + CJO=2.00p M=0.333 N=1.61 TT=4.32u )
\r
8327 *SRC=MMBD4148;DI_MMBD4148;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching
\r
8328 .MODEL DI_MMBD4148 D ( IS=126n RS=0.140 BV=75.0 IBV=1.00u
\r
8329 + CJO=2.65p M=0.333 N=2.60 TT=5.76n )
\r
8331 *SRC=BAS16T;DI_BAS16T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc.
\r
8333 .MODEL DI_BAS16T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u
\r
8334 + CJO=1.99p M=0.333 N=1.95 TT=5.76n
\r
8335 ************************************************************************************************************************
\r
8337 *SRC=BAS16TW;DI_BAS16TW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
\r
8339 .MODEL DI_BAS16TW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
\r
8340 + CJO=1.72p M=0.333 N=2.34 TT=5.76n )
\r
8342 *SRC=BAS16W;DI_BAS16W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
\r
8344 .MODEL DI_BAS16W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
\r
8345 + CJO=1.72p M=0.333 N=2.34 TT=5.76n )
\r
8347 *SRC=BAS19;DI_BAS19;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc.
\r
8349 .MODEL DI_BAS19 D ( IS=41.7n RS=0.270 BV=100 IBV=100n
\r
8350 + CJO=2.98p M=0.333 N=2.35 TT=72.0n )
\r
8352 *SRC=BAS19W;DI_BAS19W;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc.
\r
8354 .MODEL DI_BAS19W D ( IS=114n RS=0.172 BV=100 IBV=100n
\r
8355 + CJO=2.98p M=0.333 N=2.58 TT=72.0n )
\r
8357 *SRC=BAS20;DI_BAS20;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc.
\r
8359 .MODEL DI_BAS20 D ( IS=41.7n RS=0.270 BV=150 IBV=100n
\r
8360 + CJO=2.98p M=0.333 N=2.35 TT=72.0n )
\r
8362 *SRC=BAS20W;DI_BAS20W;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc.
\r
8364 .MODEL DI_BAS20W D ( IS=114n RS=0.172 BV=150 IBV=100n
\r
8365 + CJO=2.98p M=0.333 N=2.58 TT=72.0n )
\r
8367 *SRC=BAS21;DI_BAS21;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc.
\r
8369 .MODEL DI_BAS21 D ( IS=41.7n RS=0.270 BV=200 IBV=100n
\r
8370 + CJO=2.98p M=0.333 N=2.35 TT=72.0n )
\r
8372 *SRC=BAS21T;DI_BAS21T;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode
\r
8373 .MODEL DI_BAS21T D ( IS=401n RS=0.105 BV=200 IBV=100n
\r
8374 + CJO=5.00p M=0.333 N=2.87 TT=72.0n )
\r
8376 *SRC=BAS21W;DI_BAS21W;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc.
\r
8378 .MODEL DI_BAS21W D ( IS=114n RS=0.172 BV=200 IBV=100n
\r
8379 + CJO=2.98p M=0.333 N=2.58 TT=72.0n )
\r
8381 *SRC=BAV101;DI_BAV101;Diodes;Si; 100V 0.250A 50.0ns Diodes Inc. Switching
\r
8382 .MODEL DI_BAV101 D ( IS=680n RS=0.168 BV=100 IBV=100n
\r
8383 + CJO=1.99p M=0.333 N=3.29 TT=72.0n )
\r
8385 *SRC=BAV102;DI_BAV102;Diodes;Si; 150V 0.250A 50.0ns Diodes Inc. Switching
\r
8386 .MODEL DI_BAV102 D ( IS=680n RS=0.168 BV=150 IBV=100n
\r
8387 + CJO=1.99p M=0.333 N=3.29 TT=72.0n )
\r
8389 *SRC=BAV103;DI_BAV103;Diodes;Si; 200V 0.250A 50.0ns Diodes Inc. Switching
\r
8390 .MODEL DI_BAV103 D ( IS=680n RS=0.168 BV=200 IBV=100n
\r
8391 + CJO=1.99p M=0.333 N=3.29 TT=72.0n )
\r
8393 *SRC=BAV116W;DI_BAV116W;Diodes;Si; 130V 0.215A 3.00us Diodes Inc. Low leakage diode
\r
8394 .MODEL DI_BAV116W D ( IS=22.5p RS=0.282 BV=130 IBV=5.00n
\r
8395 + CJO=2.40p M=0.333 N=1.67 TT=4.32u )
\r
8397 *SRC=BAV16W;BAV16W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. -
\r
8398 .MODEL BAV16W D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u
\r
8399 + CJO=2.00p M=0.333 N=2.07 TT=5.76n )
\r
8401 *SRC=BAV16WS;BAV16WS;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
\r
8403 .MODEL BAV16WS D ( IS=10.4n RS=51.5m BV=75.0 IBV=1.00u
\r
8404 + CJO=2.00p M=0.333 N=2.07 TT=5.76n )
\r
8406 *SRC=BAV170;DI_BAV170;Diodes;Si; 85.0V 0.215A 3.00us Diodes, Inc. diode
\r
8407 .MODEL DI_BAV170 D ( IS=31.5p RS=0.195 BV=85.0 IBV=5.00n
\r
8408 + CJO=2.00p M=0.333 N=1.70 TT=4.32u
\r
8410 *SRC=BAV170T;DI_BAV170T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching Diode, dual, model for one element
\r
8411 .MODEL DI_BAV170T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n
\r
8412 + CJO=2.00p M=0.333 N=1.61 TT=4.32u )
\r
8414 *SRC=BAV199;DI_BAV199;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. diode
\r
8415 .MODEL DI_BAV199 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n
\r
8416 + CJO=2.00p M=0.333 N=1.78 TT=4.32u )
\r
8418 *SRC=BAV199DW;DI_BAV199DW;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc.
\r
8419 Switching - one element of BAV199DW array
\r
8420 .MODEL DI_BAV199DW D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n
\r
8421 + CJO=2.00p M=0.333 N=1.78 TT=4.32u )
\r
8423 *SRC=BAV199T;DI_BAV199T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching Diode, dual, model for one element
\r
8424 .MODEL DI_BAV199T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n
\r
8425 + CJO=2.00p M=0.333 N=1.61 TT=4.32u )
\r
8427 *SRC=BAV19W;BAV19W;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc. -
\r
8428 .MODEL BAV19W D ( IS=1.09u RS=0.105 BV=100 IBV=100n
\r
8429 + CJO=5.00p M=0.333 N=3.29 TT=72.0n )
\r
8431 *SRC=BAV19WS;BAV19WS;Diodes;Si; 100V 0.400A 50.0ns Diodes Inc.
\r
8433 .MODEL BAV19WS D ( IS=1.09u RS=0.105 BV=100 IBV=100n
\r
8434 + CJO=5.00p M=0.333 N=3.29 TT=72.0n )
\r
8436 *SRC=BAV20W;DI_BAV20W;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc. -
\r
8437 .MODEL DI_BAV20W D ( IS=1.09u RS=0.105 BV=150 IBV=100n
\r
8438 + CJO=5.00p M=0.333 N=3.29 TT=72.0n )
\r
8440 *SRC=BAV20WS;DI_BAV20WS;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc.
\r
8442 .MODEL DI_BAV20WS D ( IS=1.09u RS=0.105 BV=150 IBV=100n
\r
8443 + CJO=5.00p M=0.333 N=3.29 TT=72.0n )
\r
8445 *SRC=BAV21W;DI_BAV21W;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. -
\r
8446 .MODEL DI_BAV21W D ( IS=1.09u RS=0.105 BV=200 IBV=100n
\r
8447 + CJO=5.00p M=0.333 N=3.29 TT=72.0n )
\r
8449 *SRC=BAV21WS;DI_BAV21WS;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc.
\r
8451 .MODEL DI_BAV21WS D ( IS=1.09u RS=0.105 BV=200 IBV=100n
\r
8452 + CJO=5.00p M=0.333 N=3.29 TT=72.0n )
\r
8454 *SRC=BAV23A;DI_BAV23A;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode
\r
8455 .MODEL DI_BAV23A D ( IS=237n RS=0.260 BV=200 IBV=100n
\r
8456 + CJO=3.05p M=0.333 N=2.69 TT=72.0n )
\r
8458 *SRC=BAV23C;DI_BAV23C;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode
\r
8459 .MODEL DI_BAV23C D ( IS=237n RS=0.260 BV=200 IBV=100n
\r
8460 + CJO=3.05p M=0.333 N=2.69 TT=72.0n )
\r
8462 *SRC=BAV23S;DI_BAV23S;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. Switching Diode
\r
8463 .MODEL DI_BAV23S D ( IS=237n RS=0.260 BV=200 IBV=100n
\r
8464 + CJO=3.05p M=0.333 N=2.69 TT=72.0n )
\r
8466 *SRC=BAV3004W;DI_BAV3004W;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc.
\r
8468 .MODEL DI_BAV3004W D ( IS=2.76u RS=0.187 BV=300 IBV=100n
\r
8469 + CJO=1.17p M=0.333 N=1.70 TT=72.0n )
\r
8471 *SRC=BAV70;DI_BAV70;Diodes;Si; 75.0V 0.300A 4.00ns Diodes, Inc. switching
\r
8472 .MODEL DI_BAV70 D ( IS=308p RS=0.329 BV=75.0 IBV=2.50u
\r
8473 + CJO=2.65p M=0.333 N=1.70 TT=5.76n )
\r
8475 *SRC=BAV70;DI_BAV70;Diodes;Si; 75.0V 0.300A 4.00ns Diodes, Inc. switching
\r
8476 .MODEL DI_BAV70 D ( IS=308p RS=0.329 BV=75.0 IBV=2.50u
\r
8477 + CJO=2.65p M=0.333 N=1.70 TT=5.76n )
\r
8479 *SRC=BAV70T;DI_BAV70T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc.
\r
8480 Switching Diode - one element of device
\r
8481 .MODEL DI_BAV70T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u
\r
8482 + CJO=1.99p M=0.333 N=1.95 TT=5.76n )
\r
8484 *SRC=BAV70W;DI_BAV70W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
\r
8486 .MODEL DI_BAV70W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
\r
8487 + CJO=1.72p M=0.333 N=2.34 TT=5.76n )
\r
8489 *SRC=BAV756DW;DI_BAV756DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching - one element of device
\r
8490 .MODEL DI_BAV756DW D ( IS=49.2n RS=0.141 BV=75.0 IBV=2.50u
\r
8491 + CJO=2.65p M=0.333 N=2.45 TT=5.76n )
\r
8497 *SRC=BAV99DW;DI_BAV99DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode, Quad, Model for one element
\r
8498 .MODEL DI_BAV99DW D ( IS=412p RS=0.140 BV=75.0 IBV=2.50u
\r
8499 + CJO=2.00p M=0.333 N=1.70 TT=5.76n )
\r
8501 *SRC=BAV99T;DI_BAV99T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc.
\r
8502 Switching Diode - one element of device
\r
8503 .MODEL DI_BAV99T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u
\r
8504 + CJO=1.99p M=0.333 N=1.95 TT=5.76n )
\r
8506 *SRC=BAV99W;DI_BAV99W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
\r
8508 .MODEL DI_BAV99W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
\r
8509 + CJO=1.72p M=0.333 N=2.34 TT=5.76n )
\r
8511 *SRC=BAW156;DI_BAW156;Diodes;Si; 85.0V 0.160A 3.00us Diodes, Inc. diode
\r
8512 .MODEL DI_BAW156 D ( IS=59.0p RS=0.262 BV=85.0 IBV=5.00n
\r
8513 + CJO=2.00p M=0.333 N=1.78 TT=4.32u )
\r
8515 *SRC=BAW156T;DI_BAW156T;Diodes;Si; 85.0V 0.125A 3.00us Diodes Inc. Switching Diode, dual, model for one element
\r
8516 .MODEL DI_BAW156T D ( IS=10.5p RS=0.196 BV=85.0 IBV=5.00n
\r
8517 + CJO=2.00p M=0.333 N=1.61 TT=4.32u )
\r
8519 *SRC=BAW56;DI_BAW56;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode
\r
8520 .MODEL DI_BAW56 D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
\r
8521 + CJO=1.72p M=0.333 N=2.34 TT=5.76n )
\r
8523 *SRC=BAW567DW;DI_BAW567DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode
\r
8524 .MODEL DI_BAW567DW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
\r
8525 + CJO=1.72p M=0.333 N=2.34 TT=5.76n )
\r
8527 *SRC=BAW56DW;DI_BAW56DW;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching Diode
\r
8528 .MODEL DI_BAW56DW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
\r
8529 + CJO=1.72p M=0.333 N=2.34 TT=5.76n )
\r
8531 *SRC=BAW56T;DI_BAW56T;Diodes;Si; 85.0V 0.155A 4.00ns Diodes Inc.
\r
8532 Switching Diode - one element of device
\r
8533 .MODEL DI_BAW56T D ( IS=2.69n RS=0.271 BV=85.0 IBV=2.00u
\r
8534 + CJO=1.99p M=0.333 N=1.95 TT=5.76n )
\r
8536 *SRC=BAW56W;DI_BAW56W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
\r
8538 .MODEL DI_BAW56W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
\r
8539 + CJO=1.72p M=0.333 N=2.34 TT=5.76n )
\r
8541 *SRC=LL4148;DI_LL4148;Diodes;Si; 75.0V 0.300A 4.00us Diodes Inc fast switching diode
\r
8542 .MODEL DI_LL4148 D ( IS=1.06n RS=0.316 BV=75.0 IBV=5.00u
\r
8543 + CJO=3.00p M=0.333 N=1.87 TT=5.76u )
\r
8545 *SRC=MMBD2004S;DI_MMBD2004S;Diodes;Si; 240V 0.225A 50.0ns Diodes Inc. Switching
\r
8546 .MODEL DI_MMBD2004S D ( IS=1.76u RS=0.187 BV=240 IBV=100n
\r
8547 + CJO=6.63p M=0.333 N=1.70 TT=72.0n )
\r
8549 *SRC=MMBD3004BRM;DI_MMBD3004BRM;Diodes;Si; 300V 0.225A 50.0ns Diodes
\r
8550 Inc. Switching - one element of MMBD3004BRM
\r
8551 .MODEL DI_MMBD3004BRM D ( IS=2.76u RS=0.187 BV=300 IBV=100n
\r
8552 + CJO=1.17p M=0.333 N=1.70 TT=72.0n )
\r
8554 *SRC=MMBD3004S;DI_MMBD3004S;Diodes;Si; 300V 0.225A 50.0ns Diodes Inc. Switching
\r
8555 .MODEL DI_MMBD3004S D ( IS=2.76u RS=0.187 BV=300 IBV=100n
\r
8556 + CJO=1.17p M=0.333 N=1.70 TT=72.0n )
\r
8558 *SRC=MMBD4148;DI_MMBD4148;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode
\r
8559 .MODEL DI_MMBD4148 D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
\r
8560 + CJO=1.99p M=0.333 N=2.77 TT=5.76n )
\r
8562 *SRC=MMBD4148W;DI_MMBD4148W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
\r
8564 .MODEL DI_MMBD4148W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
\r
8565 + CJO=1.72p M=0.333 N=2.34 TT=5.76n )
\r
8567 *SRC=MMBD4448;DI_MMBD4448;Diodes;Si; 75.0V 0.250A 4.00ns Diodes Inc. Switching Diode
\r
8568 .MODEL DI_MMBD4448 D ( IS=300n RS=0.422 BV=75.0 IBV=2.50u
\r
8569 + CJO=1.99p M=0.333 N=2.77 TT=5.76n )
\r
8571 *SRC=MMBD4448H;DI_MMBD4448H;Diodes;Si; 80.0V 0.250A 4.00ns Diodes Inc. Switching Diode
\r
8572 .MODEL DI_MMBD4448H D ( IS=300n RS=0.422 BV=80.0 IBV=100n
\r
8573 + CJO=1.99p M=0.333 N=2.77 TT=5.76n )
\r
8575 *SRC=MMBD4448HADW;DI_MMBD4448HADW;Diodes;Si; 80.0V 0.500A 1.50ns
\r
8576 Diodes Inc. Switching - model for one node of four
\r
8577 .MODEL DI_MMBD4448HADW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
\r
8578 + CJO=2.92p M=0.333 N=1.70 TT=2.16n )
\r
8580 *SRC=MMBD4448HAQW;DI_MMBD4448HAQW;Diodes;Si; 80.0V 0.500A 1.50ns
\r
8581 Diodes Inc. Switching - model for one node of four
\r
8582 .MODEL DI_MMBD4448HAQW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
\r
8583 + CJO=2.92p M=0.333 N=1.70 TT=2.16n )
\r
8585 *SRC=MMBD4448HCQW;DI_MMBD4448HCQW;Diodes;Si; 80.0V 0.500A 1.50ns
\r
8586 Diodes Inc. Switching - model for one node of four
\r
8587 .MODEL DI_MMBD4448HCQW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
\r
8588 + CJO=2.92p M=0.333 N=1.70 TT=2.16n )
\r
8590 *SRC=MMBD4448HSDW;DI_MMBD4448HSDW;Diodes;Si; 80.0V 0.500A 1.50ns
\r
8591 Diodes Inc. Switching - model for one node of four
\r
8592 .MODEL DI_MMBD4448HSDW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
\r
8593 + CJO=2.92p M=0.333 N=1.70 TT=2.16n )
\r
8595 *SRC=MMBD4448HT;DI_MMBD4448HT;Diodes;Si; 80.0V 0.500A 4.00ns Diodes
\r
8596 Inc. Switching Diode
\r
8597 .MODEL DI_MMBD4448HT D ( IS=787n RS=0.208 BV=80.0 IBV=100n
\r
8598 + CJO=1.99p M=0.333 N=2.86 TT=5.76n )
\r
8600 *SRC=MMBD4448HTA;DI_MMBD4448HTA;Diodes;Si; 80.0V 0.500A 4.00ns Diodes
\r
8601 Inc. Switching Diode, dual, model for one element
\r
8602 .MODEL DI_MMBD4448HTA D ( IS=787n RS=0.208 BV=80.0 IBV=100n
\r
8603 + CJO=1.99p M=0.333 N=2.86 TT=5.76n )
\r
8605 *SRC=MMBD4448HTC;DI_MMBD4448HTC;Diodes;Si; 80.0V 0.500A 4.00ns Diodes
\r
8606 Inc. Switching Diode, dual, model for one element
\r
8607 .MODEL DI_MMBD4448HTC D ( IS=787n RS=0.208 BV=80.0 IBV=100n
\r
8608 + CJO=1.99p M=0.333 N=2.86 TT=5.76n )
\r
8610 *SRC=MMBD4448HTS;DI_MMBD4448HTS;Diodes;Si; 80.0V 0.500A 4.00ns Diodes
\r
8611 Inc. Switching Diode, dual, model for one element
\r
8612 .MODEL DI_MMBD4448HTS D ( IS=787n RS=0.208 BV=80.0 IBV=100n
\r
8613 + CJO=1.99p M=0.333 N=2.86 TT=5.76n )
\r
8615 *SRC=MMBD4448HTW;DI_MMBD4448HTW;Diodes;Si; 80.0V 0.500A 1.50ns
\r
8616 Diodes Inc. Switching - model for one node of three
\r
8617 .MODEL DI_MMBD4448HTW D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
\r
8618 + CJO=2.92p M=0.333 N=1.70 TT=2.16n )
\r
8620 *SRC=MMBD4448HW;DI_MMBD4448HW;Diodes;Si; 80.0V 0.500A 4.00ns Diodes Inc. Switching Diode
\r
8621 .MODEL DI_MMBD4448HW D ( IS=77.0n RS=84.0m BV=80.0 IBV=100n
\r
8622 + CJO=1.99p M=0.333 N=2.37 TT=5.76n )
\r
8624 *SRC=MMBD4448W;DI_MMBD4448W;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc.
\r
8626 .MODEL DI_MMBD4448W D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
\r
8627 + CJO=1.72p M=0.333 N=2.34 TT=5.76n )
\r
8629 *SRC=MMBD7000;DI_MMBD7000;Diodes;Si; 75.0V 0.300A 4.00us Diodes Inc.
\r
8630 .MODEL DI_MMBD7000 D ( IS=5.08n RS=0.140 BV=75.0 IBV=2.00u
\r
8631 + CJO=2.00p M=0.333 N=2.03 TT=5.76u )
\r
8633 *SRC=MMBD4148;DI_MMBD4148;Diodes;Si; 75.0V 0.300A 4.00ns Diodes Inc. Switching
\r
8634 .MODEL DI_MMBD4148 D ( IS=126n RS=0.140 BV=75.0 IBV=1.00u
\r
8635 + CJO=2.65p M=0.333 N=2.60 TT=5.76n )
\r
8637 *SRC=1N5711;DI_1N5711;Diodes;Si; 70.0V 15.0mA 1.00ns Diodes Inc. -
\r
8638 .MODEL DI_1N5711 D ( IS=315n RS=2.80 BV=70.0 IBV=10.0u
\r
8639 + CJO=2.00p M=0.333 N=2.03 TT=1.44n )
\r
8641 *SRC=1N5711W;DI_1N5711W;Diodes;Si; 70.0V 15.0mA 1.00ns Diodes Inc. -
\r
8642 .MODEL DI_1N5711W D ( IS=315n RS=2.80 BV=70.0 IBV=10.0u
\r
8643 + CJO=2.00p M=0.333 N=2.03 TT=1.44n )
\r
8645 *SRC=1N5711WS;DI_1N5711WS;Diodes;Si; 70.0V 15.0mA 1.00ns Diodes Inc.
\r
8646 .MODEL DI_1N5711WS D ( IS=315n RS=2.80 BV=70.0 IBV=10.0u
\r
8647 + CJO=2.00p M=0.333 N=2.03 TT=1.44n )
\r
8649 *SRC=1N6263W;DI_1N6263W;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky
\r
8650 .MODEL DI_1N6263W D ( IS=1.82u RS=2.80 BV=60.0 IBV=200n
\r
8651 + CJO=2.65p M=0.333 N=1.70 TT=1.44n )
\r
8653 *SRC=BAS40;DI_BAS40;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode
\r
8654 .MODEL DI_BAS40 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
\r
8655 + CJO=5.00p M=0.333 N=2.61 TT=7.20n )
\r
8657 *SRC=BAS40-04;DI_BAS40-04;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAS40-04 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
\r+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )
\r
8659 *SRC=BAS40-04T;DI_BAS40-04T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAS40-04T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
\r+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )
\r
8661 *SRC=BAS40-05;DI_BAS40-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAS40-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
\r+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )
\r
8663 *SRC=BAS40-05T;DI_BAS40-05T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAS40-05T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
\r+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )
\r
8665 *SRC=BAS40-06;DI_BAS40-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAS40-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
\r+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )
\r
8667 *SRC=BAS40-06T;DI_BAS40-06T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAS40-06T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
\r+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )
\r
8669 *SRC=BAS40BRW;DI_BAS40BRW;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four
\r.MODEL DI_BAS40BRW D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
\r+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )
\r
8671 *SRC=BAS40DW-04;DI_BAS40DW-04;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four
\r.MODEL DI_BAS40DW-04 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
\r+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )
\r
8673 *SRC=BAS40DW-05;DI_BAS40DW-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four
\r.MODEL DI_BAS40DW-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
\r+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )
\r
8675 *SRC=BAS40DW-06;DI_BAS40DW-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Quad, one node of four
\r.MODEL DI_BAS40DW-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
\r+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )
\r
8677 *SRC=BAS40T;DI_BAS40T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode
\r.MODEL DI_BAS40T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
\r+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )
\r
8679 *SRC=BAS40TW;DI_BAS40TW;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, Tripple, one node of three
\r.MODEL DI_BAS40TW D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
\r+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )
\r
8681 *SRC=BAS40W;DI_BAS40W;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode
\r.MODEL DI_BAS40W D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
\r+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )
\r
8683 *SRC=BAS40W-04;DI_BAS40W-04;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAS40W-04 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
\r+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )
\r
8685 *SRC=BAS40W-05;DI_BAS40W-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAS40W-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
\r+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )
\r
8687 *SRC=BAS40W-06;DI_BAS40W-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAS40W-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
\r+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )
\r
8689 *SRC=BAS70;DI_BAS70;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. -
\r
8690 .MODEL DI_BAS70 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
\r
8691 + CJO=2.00p M=0.333 N=1.70 TT=7.20n )
\r
8693 *SRC=BAS70-04;DI_BAS70-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAS70-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
\r+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )
\r
8695 *SRC=BAS70-04T;DI_BAS70-04T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAS70-04T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
\r+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )
\r
8697 *SRC=BAS70-05;DI_BAS70-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAS70-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
\r+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )
\r
8699 *SRC=BAS70-05T;DI_BAS70-05T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAS70-05T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
\r+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )
\r
8701 *SRC=BAS70-06;DI_BAS70-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAS70-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
\r+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )
\r
8703 *SRC=BAS70-06T;DI_BAS70-06T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAS70-06T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
\r+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )
\r
8705 *SRC=BAS70BRW;DI_BAS70BRW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four
\r.MODEL DI_BAS70BRW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
\r+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )
\r
8707 *SRC=BAS70DW-04;DI_BAS70DW-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four
\r.MODEL DI_BAS70DW-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
\r+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )
\r
8709 *SRC=BAS70DW-05;DI_BAS70DW-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four
\r.MODEL DI_BAS70DW-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
\r+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )
\r
8711 *SRC=BAS70DW-06;DI_BAS70DW-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, quad, one node of four
\r.MODEL DI_BAS70DW-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
\r+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )
\r
8713 *SRC=BAS70JW;DI_BAS70JW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAS70JW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
\r+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )
\r
8715 *SRC=BAS70T;DI_BAS70T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode
\r.MODEL DI_BAS70T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
\r+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )
\r
8717 *SRC=BAS70TW;DI_BAS70TW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, tripple, one node of three
\r.MODEL DI_BAS70TW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
\r+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )
\r
8719 *SRC=BAS70W;DI_BAS70W;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode
\r.MODEL DI_BAS70W D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
\r+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )
\r
8721 *SRC=BAS70W-04;DI_BAS70W-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAS70W-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
\r+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )
\r
8723 *SRC=BAS70W-05;DI_BAS70W-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAS70W-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
\r+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )
\r
8725 *SRC=BAS70W-06;DI_BAS70W-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAS70W-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
\r+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )
\r
8727 *SRC=BAT42;DI_BAT42;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc.
\r
8729 .MODEL DI_BAT42 D ( IS=2.46u RS=0.210 BV=30.0 IBV=500n
\r
8730 + CJO=13.3p M=0.333 N=1.70 TT=7.20n )
\r
8732 *SRC=BAT42W;DI_BAT42W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode
\r.MODEL DI_BAT42W D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n
\r+ CJO=8.88p M=0.333 N=3.51 TT=7.20n )
\r
8734 *SRC=BAT42WS;DI_BAT42WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc
\r
8736 .MODEL DI_BAT42WS D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n
\r
8737 + CJO=8.88p M=0.333 N=3.51 TT=7.20n )
\r
8739 *SRC=BAT43W;DI_BAT43W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode
\r.MODEL DI_BAT43W D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n
\r+ CJO=8.88p M=0.333 N=3.51 TT=7.20n )
\r
8741 *SRC=BAT43WS;DI_BAT43WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode
\r
8742 .MODEL DI_BAT43WS D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n
\r
8743 + CJO=8.88p M=0.333 N=3.51 TT=7.20n )
\r
8745 *SRC=BAT46;DI_BAT46;Diodes;Si; 100V 0.150A 5.00ns Diodes Inc. Schottky
\r
8746 .MODEL DI_BAT46 D ( IS=603n RS=0.280 BV=100 IBV=5.00u
\r
8747 + CJO=7.96p M=0.333 N=1.70 TT=7.20n )
\r
8749 *SRC=BAT46W;DI_BAT46W;Diodes;Si; 100V 0.150A 5.00ns Diodes Inc. Schottky
\r.MODEL DI_BAT46W D ( IS=603n RS=0.280 BV=100 IBV=5.00u
\r+ CJO=7.96p M=0.333 N=1.70 TT=7.20n )
\r
8751 *SRC=BAT54;DI_BAT54;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky
\r
8752 .MODEL DI_BAT54 D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
\r
8753 + CJO=13.3p M=0.333 N=2.28 TT=7.20n )
\r
8755 *SRC=BAT54A;DI_BAT54A;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAT54A D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
\r+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
\r
8757 *SRC=BAT54ADW;DI_BAT54ADW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four
\r.MODEL DI_BAT54ADW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
\r+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
\r
8759 *SRC=BAT54AT;DI_BAT54AT;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAT54AT D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
\r+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
\r
8761 *SRC=BAT54AW;DI_BAT54AW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAT54AW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
\r+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
\r
8763 *SRC=BAT54BRW;DI_BAT54BRW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four
\r.MODEL DI_BAT54BRW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
\r+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
\r
8765 *SRC=BAT54C;DI_BAT54C;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAT54C D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
\r+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
\r
8767 *SRC=BAT54CDW;DI_BAT54CDW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four
\r.MODEL DI_BAT54CDW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
\r+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
\r
8769 *SRC=BAT54CT;DI_BAT54CT;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAT54CT D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
\r+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
\r
8771 *SRC=BAT54CW;DI_BAT54CW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAT54CW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
\r+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
\r
8773 *******************************************************************************************************************************************
\r
8774 *SRC=BAT54DW;DI_BAT54DW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky, dual, one of two nodes
\r
8775 .MODEL DI_BAT54DW D ( IS=235n RS=0.210 BV=30.0 IBV=2.00u
\r
8776 + CJO=13.3p M=0.333 N=1.28 TT=7.20n )
\r
8777 *******************************************************************************************************************************************
\r
8779 *SRC=BAT54JW;DI_BAT54JW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAT54JW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
\r+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
\r
8781 *SRC=BAT54S;DI_BAT54S;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAT54S D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
\r+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
\r
8783 *SRC=BAT54SDW;DI_BAT54SDW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, quad, one node of four
\r.MODEL DI_BAT54SDW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
\r+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
\r
8785 *SRC=BAT54ST;DI_BAT54ST;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAT54ST D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
\r+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
\r
8787 *SRC=BAT54SW;DI_BAT54SW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r.MODEL DI_BAT54SW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
\r+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
\r
8789 *SRC=BAT54T;DI_BAT54T;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode
\r.MODEL DI_BAT54T D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
\r+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
\r
8791 *SRC=BAT54TW;DI_BAT54TW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode, tripple, one node of three
\r.MODEL DI_BAT54TW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
\r+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
\r
8793 *SRC=BAT54W;DI_BAT54W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode
\r.MODEL DI_BAT54W D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
\r+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
\r
8795 *SRC=BAT54WS;DI_BAT54WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky diode
\r
8796 .MODEL DI_BAT54WS D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
\r
8797 + CJO=13.3p M=0.333 N=2.28 TT=7.20n )
\r
8799 *SRC=LLSD101A;DI_LLSD101A;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky
\r.MODEL DI_LLSD101A D ( IS=1.82u RS=2.80 BV=60.0 IBV=200n
\r+ CJO=2.65p M=0.333 N=1.70 TT=1.44n )
\r
8801 *SRC=LLSD101B;DI_LLSD101B;Diodes;Si; 50.0V 15.0mA 1.00ns Diodes Inc. Schottky
\r.MODEL DI_LLSD101B D ( IS=1.82u RS=2.80 BV=50.0 IBV=200n
\r+ CJO=2.65p M=0.333 N=1.70 TT=1.44n )
\r
8803 *SRC=LLSD101C;DI_LLSD101C;Diodes;Si; 40.0V 15.0mA 1.00ns Diodes Inc. Schottky
\r.MODEL DI_LLSD101C D ( IS=1.82u RS=2.80 BV=40.0 IBV=200n
\r+ CJO=2.65p M=0.333 N=1.70 TT=1.44n )
\r
8805 *SRC=LLSD103A;DI_LLSD103A;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky
\r.MODEL DI_LLSD103A D ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u
\r+ CJO=53.0p M=0.333 N=1.70 TT=14.4n )
\r
8807 *SRC=LLSD103B;DI_LLSD103B;Diodes;Si; 30.0V 0.350A 10.0ns Diodes Inc. Schottky
\r.MODEL DI_LLSD103B D ( IS=8.65u RS=0.120 BV=30.0 IBV=5.00u
\r+ CJO=53.0p M=0.333 N=1.70 TT=14.4n )
\r
8809 *SRC=LLSD103C;DI_LLSD103C;Diodes;Si; 20.0V 0.350A 10.0ns Diodes Inc. Schottky
\r.MODEL DI_LLSD103C D ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u
\r+ CJO=53.0p M=0.333 N=1.70 TT=14.4n )
\r
8811 *SRC=SD101A;DI_SD101A;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky
\r.MODEL DI_SD101A D ( IS=1.82u RS=2.80 BV=60.0 IBV=200n
\r+ CJO=2.65p M=0.333 N=1.70 TT=1.44n )
\r
8813 *SRC=SD101AW;DI_SD101AW;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky
\r
8814 .MODEL DI_SD101AW D ( IS=1.82u RS=2.80 BV=60.0 IBV=200n
\r
8815 + CJO=2.65p M=0.333 N=1.70 TT=1.44n )
\r
8817 *******************************************************************************************************************************************
\r
8818 *SRC=SD101AWS;DI_SD101AWS;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky- SD101AWS/BWS/CWS
\r
8819 .MODEL DI_SD101AWS D ( IS=230n RS=2.13 BV=60.0 IBV=200n
\r
8820 + CJO=2.00p M=0.333 N=1.96 TT=1.44n )
\r
8821 *******************************************************************************************************************************************
\r
8823 *SRC=SD101B;DI_SD101B;Diodes;Si; 50.0V 15.0mA 1.00ns Diodes Inc. Schottky
\r.MODEL DI_SD101B D ( IS=1.82u RS=2.80 BV=50.0 IBV=200n
\r+ CJO=2.65p M=0.333 N=1.70 TT=1.44n )
\r
8825 *SRC=SD101BW;DI_SD101BW;Diodes;Si; 50.0V 15.0mA 1.00ns Diodes Inc. Schottky
\r
8826 .MODEL DI_SD101BW D ( IS=1.82u RS=2.80 BV=50.0 IBV=200n
\r
8827 + CJO=2.65p M=0.333 N=1.70 TT=1.44n )
\r
8829 *SRC=SD101BWS;DI_SD101BWS;Diodes;Si; 50.0V 15.0mA 1.00ns Diodes Inc. Schottky
\r.MODEL DI_SD101BWS D ( IS=1.82u RS=2.80 BV=50.0 IBV=200n
\r+ CJO=2.65p M=0.333 N=1.70 TT=1.44n )
\r
8831 *SRC=SD101C;DI_SD101C;Diodes;Si; 40.0V 15.0mA 1.00ns Diodes Inc. Schottky
\r.MODEL DI_SD101C D ( IS=1.82u RS=2.80 BV=40.0 IBV=200n
\r+ CJO=2.65p M=0.333 N=1.70 TT=1.44n )
\r
8833 *SRC=SD101CW;DI_SD101CW;Diodes;Si; 40.0V 15.0mA 1.00ns Diodes Inc. Schottky
\r
8834 .MODEL DI_SD101CW D ( IS=1.82u RS=2.80 BV=40.0 IBV=200n
\r
8835 + CJO=2.65p M=0.333 N=1.70 TT=1.44n )
\r
8837 *SRC=SD101CWS;DI_SD101CWS;Diodes;Si; 40.0V 15.0mA 1.00ns Diodes Inc. Schottky
\r.MODEL DI_SD101CWS D ( IS=1.82u RS=2.80 BV=40.0 IBV=200n
\r+ CJO=2.65p M=0.333 N=1.70 TT=1.44n )
\r
8839 *SRC=SD103ASDM;DI_SD103ASDM;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky Barrier Diode, quad, one node of four
\r
8840 .MODEL DI_SD103ASDM D ( IS=646n RS=0.120 BV=40.0 IBV=5.00u
\r
8841 + CJO=29.2 M=0.333 N=1.28 TT=14.4n )
\r
8843 *SRC=SD103ATW;DI_SD103ATW;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky Barrier Diode, tripple, one node of three
\r
8844 .MODEL DI_SD103ATW D ( IS=646n RS=0.120 BV=40.0 IBV=5.00u
\r
8845 + CJO=29.2 M=0.333 N=1.28 TT=14.4n )
\r
8847 *SRC=SD103AW;DI_SD103AW;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky
\r
8848 .MODEL DI_SD103AW D ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u
\r
8849 + CJO=53.0p M=0.333 N=1.70 TT=14.4n )
\r
8851 *SRC=SD103AWS;DI_SD103AWS;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc.
\r
8853 .MODEL DI_SD103AWS D ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u
\r
8854 + CJO=53.0p M=0.333 N=1.70 TT=14.4n )
\r
8858 *SRC=SD103BWS;DI_SD103BWS;Diodes;Si; 30.0V 0.350A 10.0ns Diodes Inc. Schottky
\r\r
8859 .MODEL DI_SD103BWS D ( IS=8.65u RS=0.120 BV=30.0 IBV=5.00u
\r\r
8860 + CJO=53.0p M=0.333 N=1.70 TT=14.4n )
\r
8862 *SRC=SD103CW;DI_SD103CW;Diodes;Si; 20.0V 0.350A 10.0ns Diodes Inc. Schottky
\r
8863 .MODEL DI_SD103CW D ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u
\r
8864 + CJO=53.0p M=0.333 N=1.70 TT=14.4n )
\r
8866 *SRC=SD103CWS;DI_SD103CWS;Diodes;Si; 20.0V 0.350A 10.0ns Diodes Inc. Schottky
\r
8867 .MODEL DI_SD103CWS D ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u
\r
8868 + CJO=53.0p M=0.333 N=1.70 TT=14.4n )
\r
8870 *SRC=SDM03MT40;DI_SDM03MT40;Diodes;Si; 40.0V 30.0mA 3.00us Diodes Inc. Schottky Barrier Diode, tripple, one node of three
\r
8871 .MODEL DI_SDM03MT40 D ( IS=12.5u RS=1.41 BV=40.0 IBV=1.00u
\r
8872 + CJO=2.00p M=0.333 N=2.79 TT=4.32u )
\r
8873 **************************************************************************************************************************************************************
\r
8875 *SRC=SDM03U40;DI_SDM03U40;Diodes;Si; 30.0V 30.0mA 1.00ns Diodes Inc.
\r
8877 .MODEL DI_SDM03U40 D ( IS=16.5u RS=2.20 BV=30.0 IBV=500n
\r
8878 + CJO=2.59p M=0.333 N=2.92 TT=1.44n )
\r
8880 *SRC=SDM10M45SD;DI_SDM10M45SD;Diodes;Si; 45.0V 0.100A 3.00us Diodes Inc. Schottky Barrier Diode
\r
8881 .MODEL DI_SDM10M45SD D ( IS=553n RS=0.420 BV=45.0 IBV=1.00u
\r
8882 + CJO=10.6p M=0.333 N=1.36 TT=4.32u )
\r
8883 **********************************************************************************************************************************
\r
8885 *SRC=SDM10P45;DI_SDM10P45;Diodes;Si; 45.0V 0.100A 5.00ns Diodes Inc. Schottky
\r
8886 .MODEL DI_SDM10P45 D ( IS=745n RS=0.792 BV=45.0 IBV=1.00u
\r
8887 + CJO=11.2p M=0.333 N=1.39 TT=7.20n )
\r
8889 *SRC=SDM10U45;DI_SDM10U45;Diodes;Si; 40.0V 0.300A 5.00ns Diodes Inc.
\r
8891 .MODEL DI_SDM10U45 D ( IS=26.8u RS=0.140 BV=40.0 IBV=1.00u
\r
8892 + CJO=10.6p M=0.333 N=2.45 TT=7.20n )
\r
8894 *SRC=SDM20E40C;DI_SDM20E40C;Diodes;Si; 40.0V 0.400A 5.00ns Diodes Inc. Schottky
\r
8895 .MODEL DI_SDM20E40C D ( IS=3.15u RS=0.165 BV=40.0 IBV=70.0u
\r
8896 + CJO=39.8p M=0.333 N=1.16 TT=7.20n )
\r
8898 *SRC=SDM20U30;DI_SDM20U30;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc.
\r
8900 .MODEL DI_SDM20U30 D ( IS=59.4n RS=0.210 BV=30.0 IBV=150u
\r
8901 + CJO=19.9p M=0.333 N=0.700 TT=7.20n )
\r
8903 *SRC=SDM20U40;DI_SDM20U40;Diodes;Si; 40.0V 0.250A 10.0ns Diodes Inc.
\r
8905 .MODEL DI_SDM20U40 D ( IS=4.32u RS=0.168 BV=40.0 IBV=5.00u
\r
8906 + CJO=39.8p M=0.333 N=1.70 TT=14.4n )
\r
8908 *SRC=SDM40E20LS;DI_SDM40E20LS;Diodes;Si; 20.0V 0.400A 5.00ns Diodes Inc. Schottky
\r
8909 .MODEL DI_SDM40E20LS D ( IS=54.8u RS=0.132 BV=20.0 IBV=250u
\r
8910 + CJO=199p M=0.333 N=1.34 TT=7.20n )
\r
8912 *SRC=SDMG0340L;DI_SDMG0340L;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc.
\r
8913 .MODEL DI_SBMG0340L D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u
\r
8914 + CJO=2.65p M=0.333 N=2.82 TT=1.44n )
\r
8916 *SRC=SDMG0340LA;DI_SDMG0340LA;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. Schottky diode, dual, one node of two
\r
8917 .MODEL DI_SBMG0340LA D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u
\r
8918 + CJO=2.65p M=0.333 N=2.82 TT=1.44n )
\r
8920 *SRC=SDMG0340LC;DI_SDMG0340LC;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. Schottky diode, dual, one node of two
\r
8921 .MODEL DI_SBMG0340LC D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u
\r
8922 + CJO=2.65p M=0.333 N=2.82 TT=1.44n )
\r
8924 *SRC=SDMG0340LS;DI_SDMG0340LS;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc. Schottky diode, dual, one node of two
\r
8925 .MODEL DI_SBMG0340LS D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u
\r
8926 + CJO=2.65p M=0.333 N=2.82 TT=1.44n )
\r
8928 *SRC=SDMK0340L;DI_SDMK0340L;Diodes;Si; 40.0V 30.0mA 3.00us Diodes Inc. Schottky Barrier Diode
\r
8929 .MODEL DI_SDMK0340L D ( IS=11.2u RS=3.64 BV=40.0 IBV=500n
\r
8930 + CJO=2.65p M=0.333 N=2.69 TT=4.32u )
\r
8931 ******************************************************************************************************************************
\r
8933 *SRC=SDMP0340LAT;DI_SDMP0340LAT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r
8934 .MODEL DI_SDMP0340LAT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u
\r
8935 + CJO=2.65p M=0.333 N=2.92 TT=7.20n )
\r
8936 **************************************************************************************************************************************************
\r
8938 *SRC=SDMP0340LCT;DI_SDMP0340LCT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r
8939 .MODEL DI_SDMP0340LCT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u
\r
8940 + CJO=2.65p M=0.333 N=2.92 TT=7.20n )
\r
8941 **************************************************************************************************************************************************
\r
8943 *SRC=SDMP0340LST;DI_SDMP0340LST;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky diode, dual, one node of two
\r
8944 .MODEL DI_SDMP0340LST D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u
\r
8945 + CJO=2.65p M=0.333 N=2.92 TT=7.20n )
\r
8946 **************************************************************************************************************************************************
\r
8948 *SRC=SDMP0340LT;DI_SDMP0340LT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc. Schottky
\r
8949 .MODEL DI_SDMP0340LT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u
\r
8950 + CJO=2.65p M=0.333 N=2.92 TT=7.20n )
\r
8952 *SRC=2W005G;DI_2W005G;Diodes;Si; 50.0V 2.00A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_2W005G D ( IS=28.4n RS=21.1m BV=50.0 IBV=5.00u
\r+ CJO=29.6p M=0.333 N=1.95 TT=4.32u )
\r
8954 *SRC=2W01G;DI_2W01G;Diodes;Si; 100V 2.00A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_2W01G D ( IS=28.4n RS=21.1m BV=100 IBV=5.00u
\r+ CJO=29.6p M=0.333 N=1.95 TT=4.32u )
\r
8956 *SRC=2W02G;DI_2W02G;Diodes;Si; 200V 2.00A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_2W02G D ( IS=28.4n RS=21.1m BV=200 IBV=5.00u
\r+ CJO=29.6p M=0.333 N=1.95 TT=4.32u )
\r
8958 *SRC=2W04G;DI_2W04G;Diodes;Si; 400V 2.00A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_2W04G D ( IS=28.4n RS=21.1m BV=400 IBV=5.00u
\r+ CJO=29.6p M=0.333 N=1.95 TT=4.32u )
\r
8960 *SRC=2W06G;DI_2W06G;Diodes;Si; 600V 2.00A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_2W06G D ( IS=28.4n RS=21.1m BV=600 IBV=5.00u
\r+ CJO=29.6p M=0.333 N=1.95 TT=4.32u )
\r
8962 *SRC=2W08G;DI_2W08G;Diodes;Si; 800V 2.00A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_2W08G D ( IS=28.4n RS=21.1m BV=800 IBV=5.00u
\r+ CJO=29.6p M=0.333 N=1.95 TT=4.32u )
\r
8964 *SRC=2W10G;DI_2W10G;Diodes;Si; 1.00kV 2.00A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_2W10G D ( IS=28.4n RS=21.1m BV=1.00k IBV=5.00u
\r+ CJO=29.6p M=0.333 N=1.95 TT=4.32u )
\r
8966 *SRC=DF005M;DI_DF005M;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Bridge -- for one element
\r
8967 .MODEL DI_DF005M D ( IS=4.42n RS=42.0m BV=50.0 IBV=10.0u
\r
8968 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
8970 *SRC=DF005S;DI_DF005S;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Bridge -- for one element
\r
8971 .MODEL DI_DF005S D ( IS=4.42n RS=42.0m BV=50.0 IBV=10.0u
\r
8972 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
8974 *SRC=DF01M;DI_DF01M;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Bridge -- for one element
\r
8975 .MODEL DI_DF01M D ( IS=4.42n RS=42.0m BV=100 IBV=10.0u
\r
8976 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
8978 *SRC=DF01S;DI_DF01S;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Bridge -- for one element
\r
8979 .MODEL DI_DF01S D ( IS=4.42n RS=42.0m BV=100 IBV=10.0u
\r
8980 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
8982 *SRC=DF02M;DI_DF02M;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Bridge -- for one element
\r
8983 .MODEL DI_DF02M D ( IS=4.42n RS=42.0m BV=200 IBV=10.0u
\r
8984 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
8986 *SRC=DF02S;DI_DF02S;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Bridge -- for one element
\r
8987 .MODEL DI_DF02S D ( IS=4.42n RS=42.0m BV=200 IBV=10.0u
\r
8988 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
8990 *SRC=DF04M;DI_DF04M;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Bridge -- for one element
\r
8991 .MODEL DI_DF04M D ( IS=4.42n RS=42.0m BV=400 IBV=10.0u
\r
8992 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
8994 *SRC=DF04S;DI_DF04S;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Bridge -- for one element
\r
8995 .MODEL DI_DF04S D ( IS=4.42n RS=42.0m BV=400 IBV=10.0u
\r
8996 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
8998 *SRC=DF06M;DI_DF06M;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Bridge -- for one element
\r
8999 .MODEL DI_DF06M D ( IS=4.42n RS=42.0m BV=600 IBV=10.0u
\r
9000 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
9002 *SRC=DF06S;DI_DF06S;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Bridge -- for one element
\r
9003 .MODEL DI_DF06S D ( IS=4.42n RS=42.0m BV=600 IBV=10.0u
\r
9004 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
9006 *SRC=DF08M;DI_DF08M;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Bridge -- for one element
\r
9007 .MODEL DI_DF08M D ( IS=4.42n RS=42.0m BV=800 IBV=10.0u
\r
9008 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
9010 *SRC=DF08S;DI_DF08S;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Bridge -- for one element
\r
9011 .MODEL DI_DF08S D ( IS=4.42n RS=42.0m BV=800 IBV=10.0u
\r
9012 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
9014 *SRC=DF10M;DI_DF10M;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Bridge -- for one element
\r
9015 .MODEL DI_DF10M D ( IS=4.42n RS=42.0m BV=1.00k IBV=10.0u
\r
9016 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
9018 *SRC=DF10S;DI_DF10S;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Bridge -- for one element
\r
9019 .MODEL DI_DF10S D ( IS=4.42n RS=42.0m BV=1.00k IBV=10.0u
\r
9020 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
9022 *SRC=DF15005M;DI_DF15005M;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_DF15005M D ( IS=2.06n RS=28.1m BV=50.0 IBV=10.0u
\r+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
9024 *SRC=DF15005S;DI_DF15005S;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r
9025 .MODEL DI_DF15005S D ( IS=2.06n RS=28.1m BV=50.0 IBV=10.0u
\r
9026 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
9028 *SRC=DF1501M;DI_DF1501M;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_DF1501M D ( IS=2.06n RS=28.1m BV=100 IBV=10.0u
\r+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
9030 *SRC=DF1501S;DI_DF1501S;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r
9031 .MODEL DI_DF1501S D ( IS=2.06n RS=28.1m BV=100 IBV=10.0u
\r
9032 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
9034 *SRC=DF1502M;DI_DF1502M;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_DF1502M D ( IS=2.06n RS=28.1m BV=200 IBV=10.0u
\r+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
9036 *SRC=DF1502S;DI_DF1502S;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r
9037 .MODEL DI_DF1502S D ( IS=2.06n RS=28.1m BV=200 IBV=10.0u
\r
9038 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
9040 *SRC=DF1504M;DI_DF1504M;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_DF1504M D ( IS=2.06n RS=28.1m BV=400 IBV=10.0u
\r+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
9042 *SRC=DF1504S;DI_DF1504S;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r
9043 .MODEL DI_DF1504S D ( IS=2.06n RS=28.1m BV=400 IBV=10.0u
\r
9044 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
9046 *SRC=DF1506M;DI_DF1506M;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_DF1506M D ( IS=2.06n RS=28.1m BV=600 IBV=10.0u
\r+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
9048 *SRC=DF1506S;DI_DF1506S;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r
9049 .MODEL DI_DF1506S D ( IS=2.06n RS=28.1m BV=600 IBV=10.0u
\r
9050 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
9052 *SRC=DF1508M;DI_DF1508M;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_DF1508M D ( IS=2.06n RS=28.1m BV=800 IBV=10.0u
\r+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
9054 *SRC=DF1508S;DI_DF1508S;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r
9055 .MODEL DI_DF1508S D ( IS=2.06n RS=28.1m BV=800 IBV=10.0u
\r
9056 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
9058 *SRC=DF1510M;DI_DF1510M;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_DF1510M D ( IS=2.06n RS=28.1m BV=1.00k IBV=10.0u
\r+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
9060 *SRC=DF1510S;DI_DF1510S;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r
9061 .MODEL DI_DF1510S D ( IS=2.06n RS=28.1m BV=1.00k IBV=10.0u
\r
9062 + CJO=65.0p M=0.333 N=1.70 TT=4.32u )
\r
9064 *SRC=GBJ15005;DI_GBJ15005;Diodes;Si; 50.0V 15.0A 3.00us Diodes Inc.
\r
9065 Bridge Rectifier -- for one element
\r
9066 .MODEL DI_GBJ15005 D ( IS=5.11u RS=3.43m BV=50.0 IBV=10.0u
\r
9067 + CJO=106p M=0.333 N=2.44 TT=4.32u )
\r
9069 *SRC=GBJ1501;DI_GBJ1501;Diodes;Si; 100V 15.0A 3.00us Diodes Inc.
\r
9070 Bridge Rectifier -- for one element
\r
9071 .MODEL DI_GBJ1501 D ( IS=5.11u RS=3.43m BV=100 IBV=10.0u
\r
9072 + CJO=106p M=0.333 N=2.44 TT=4.32u )
\r
9074 *SRC=GBJ1502;DI_GBJ1502;Diodes;Si; 200V 15.0A 3.00us Diodes Inc.
\r
9075 Bridge Rectifier -- for one element
\r
9076 .MODEL DI_GBJ1502 D ( IS=5.11u RS=3.43m BV=200 IBV=10.0u
\r
9077 + CJO=106p M=0.333 N=2.44 TT=4.32u )
\r
9079 *SRC=GBJ1504;DI_GBJ1504;Diodes;Si; 400V 15.0A 3.00us Diodes Inc.
\r
9080 Bridge Rectifier -- for one element
\r
9081 .MODEL DI_GBJ1504 D ( IS=5.11u RS=3.43m BV=400 IBV=10.0u
\r
9082 + CJO=106p M=0.333 N=2.44 TT=4.32u )
\r
9084 *SRC=GBJ1506;DI_GBJ1506;Diodes;Si; 600V 15.0A 3.00us Diodes Inc.
\r
9085 Bridge Rectifier -- for one element
\r
9086 .MODEL DI_GBJ1506 D ( IS=5.11u RS=3.43m BV=600 IBV=10.0u
\r
9087 + CJO=106p M=0.333 N=2.44 TT=4.32u )
\r
9089 *SRC=GBJ1508;DI_GBJ1508;Diodes;Si; 800V 15.0A 3.00us Diodes Inc.
\r
9090 Bridge Rectifier -- for one element
\r
9091 .MODEL DI_GBJ1508 D ( IS=5.11u RS=3.43m BV=800 IBV=10.0u
\r
9092 + CJO=106p M=0.333 N=2.44 TT=4.32u )
\r
9094 *SRC=GBJ1510;DI_GBJ1510;Diodes;Si; 1.00kV 15.0A 3.00us Diodes Inc.
\r
9095 Bridge Rectifier -- for one element
\r
9096 .MODEL DI_GBJ1510 D ( IS=5.11u RS=3.43m BV=1.00k IBV=10.0u
\r
9097 + CJO=106p M=0.333 N=2.44 TT=4.32u )
\r
9099 *SRC=GBJ20005;DI_GBJ20005;Diodes;Si; 50.0V 20.0A 3.00us Diodes Inc.
\r
9100 Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ20005 D ( IS=15.1u RS=2.96m BV=50.0 IBV=10.0u
\r
9101 + CJO=111p M=0.333 N=2.84 TT=4.32u )
\r
9103 *SRC=GBJ2001;DI_GBJ2001;Diodes;Si; 100V 20.0A 3.00us Diodes Inc.
\r
9104 Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2001 D ( IS=15.1u RS=2.96m BV=100 IBV=10.0u
\r
9105 + CJO=111p M=0.333 N=2.84 TT=4.32u )
\r
9107 *SRC=GBJ2002;DI_GBJ2002;Diodes;Si; 200V 20.0A 3.00us Diodes Inc.
\r
9108 Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2002 D ( IS=15.1u RS=2.96m BV=200 IBV=10.0u
\r
9109 + CJO=111p M=0.333 N=2.84 TT=4.32u )
\r
9111 *SRC=GBJ2004;DI_GBJ2004;Diodes;Si; 400V 20.0A 3.00us Diodes Inc.
\r
9112 Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2004 D ( IS=15.1u RS=2.96m BV=400 IBV=10.0u
\r
9113 + CJO=111p M=0.333 N=2.84 TT=4.32u )
\r
9115 *SRC=GBJ2006;DI_GBJ2006;Diodes;Si; 600V 20.0A 3.00us Diodes Inc.
\r
9116 Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2006 D ( IS=15.1u RS=2.96m BV=600 IBV=10.0u
\r
9117 + CJO=111p M=0.333 N=2.84 TT=4.32u )
\r
9119 *SRC=GBJ2008;DI_GBJ2008;Diodes;Si; 800V 20.0A 3.00us Diodes Inc.
\r
9120 Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2008 D ( IS=15.1u RS=2.96m BV=800 IBV=10.0u
\r
9121 + CJO=111p M=0.333 N=2.84 TT=4.32u )
\r
9123 *SRC=GBJ2010;DI_GBJ2010;Diodes;Si; 1.00kV 20.0A 3.00us Diodes Inc.
\r
9124 Bridge Rect. This model covers only one element. There are four elements per pkg. .MODEL DI_GBJ2010 D ( IS=15.1u RS=2.96m BV=1.00k IBV=10.0u
\r
9125 + CJO=111p M=0.333 N=2.84 TT=4.32u )
\r
9127 *SRC=GBJ2510;DI_GBJ2510;Diodes;Si; 1.00kV 25.0A 3.00us Diodes Inc. Bridge Rectifier--Per Element
\r
9128 .MODEL DI_GBJ2510 D ( IS=379n RS=2.84m BV=1.00k IBV=10.0u
\r
9129 + CJO=146p M=0.333 N=2.07 TT=4.32u )
\r
9131 *SRC=GBPC3506;DI_GBPC3506;Diodes;Si; 600V 35.0A 3.00us Diodes Inc Rectifier
\r
9132 .MODEL DI_GBPC3506 D ( IS=162u RS=3.32m BV=600 IBV=5.00u
\r
9133 + CJO=477p M=0.333 N=3.01 TT=4.32u )
\r
9135 *SRC=GBU1002;DI_GBU1002;Diodes;Si; 200V 10.0A 3.00us Diodes Inc.
\r
9136 Bridge Rectifier -- Per Element
\r
9137 .MODEL DI_GBU1002 D ( IS=1.71f RS=7.00m BV=200 IBV=5.00u
\r
9138 + CJO=133p M=0.333 N=0.900 TT=4.32u )
\r
9140 *SRC=HD01;DI_HD01;Diodes;Si; 100V 0.800A 3.00us Diodes Inc. Bridge
\r
9141 Rectifier -- for one element
\r
9142 .MODEL DI_HD01 D ( IS=3.47n RS=42.6m BV=100 IBV=5.00u
\r
9143 + CJO=25.2p M=0.333 N=1.70 TT=4.32u )
\r
9145 *SRC=HD02;DI_HD02;Diodes;Si; 200V 0.800A 3.00us Diodes Inc. Bridge
\r
9146 Rectifier -- for one element
\r
9147 .MODEL DI_HD02 D ( IS=3.47n RS=42.6m BV=200 IBV=5.00u
\r
9148 + CJO=25.2p M=0.333 N=1.70 TT=4.32u )
\r
9150 *SRC=HD04;DI_HD04;Diodes;Si; 400V 0.800A 3.00us Diodes Inc. Bridge
\r
9151 Rectifier -- for one element
\r
9152 .MODEL DI_HD04 D ( IS=3.47n RS=42.6m BV=400 IBV=5.00u
\r
9153 + CJO=25.2p M=0.333 N=1.70 TT=4.32u )
\r
9155 *SRC=HD06;DI_HD06;Diodes;Si; 600V 0.800A 3.00us Diodes Inc. Bridge
\r
9156 Rectifier -- for one element
\r
9157 .MODEL DI_HD06 D ( IS=3.47n RS=42.6m BV=600 IBV=5.00u
\r
9158 + CJO=25.2p M=0.333 N=1.70 TT=4.32u )
\r
9160 *SRC=KBP005G;DI_KBP005G;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_KBP005G D ( IS=39.2u RS=28.1m BV=50.0 IBV=5.00u
\r+ CJO=26.5p M=0.333 N=4.38 TT=4.32u )
\r
9162 *SRC=KBP01G;DI_KBP01G;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_KBP01G D ( IS=39.2u RS=28.1m BV=100 IBV=5.00u
\r+ CJO=26.5p M=0.333 N=4.38 TT=4.32u )
\r
9164 *SRC=KBP02G;DI_KBP02G;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_KBP02G D ( IS=39.2u RS=28.1m BV=200 IBV=5.00u
\r+ CJO=26.5p M=0.333 N=4.38 TT=4.32u )
\r
9166 *SRC=KBP04G;DI_KBP04G;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_KBP04G D ( IS=39.2u RS=28.1m BV=400 IBV=5.00u
\r+ CJO=26.5p M=0.333 N=4.38 TT=4.32u )
\r
9168 *SRC=KBP06G;DI_KBP06G;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_KBP06G D ( IS=39.2u RS=28.1m BV=600 IBV=5.00u
\r+ CJO=26.5p M=0.333 N=4.38 TT=4.32u )
\r
9170 *SRC=KBP08G;DI_KBP08G;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_KBP08G D ( IS=39.2u RS=28.1m BV=800 IBV=5.00u
\r+ CJO=26.5p M=0.333 N=4.38 TT=4.32u )
\r
9172 *SRC=KBP10G;DI_KBP10G;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r.MODEL DI_KBP10G D ( IS=39.2u RS=28.1m BV=1.00k IBV=5.00u
\r+ CJO=26.5p M=0.333 N=4.38 TT=4.32u )
\r
9174 *SRC=KBP2005G;DI_KBP2005G;Diodes;Si; 50.0V 2.00A 3.00us Diodes Inc. Bridge -- for one element
\r
9175 .MODEL DI_KBP2005G D ( IS=143n RS=21.1m BV=50.0 IBV=5.00u
\r
9176 + CJO=46.2p M=0.333 N=2.12 TT=4.32u )
\r
9178 *SRC=KBP201G;DI_KBP201G;Diodes;Si; 100V 2.00A 3.00us Diodes Inc. Bridge -- for one element
\r
9179 .MODEL DI_KBP201G D ( IS=143n RS=21.1m BV=100 IBV=5.00u
\r
9180 + CJO=46.2p M=0.333 N=2.12 TT=4.32u )
\r
9182 *SRC=KBP202G;DI_KBP202G;Diodes;Si; 200V 2.00A 3.00us Diodes Inc. Bridge -- for one element
\r
9183 .MODEL DI_KBP202G D ( IS=143n RS=21.1m BV=200 IBV=5.00u
\r
9184 + CJO=46.2p M=0.333 N=2.12 TT=4.32u )
\r
9186 *SRC=KBP204G;DI_KBP204G;Diodes;Si; 400V 2.00A 3.00us Diodes Inc. Bridge -- for one element
\r
9187 .MODEL DI_KBP204G D ( IS=143n RS=21.1m BV=400 IBV=5.00u
\r
9188 + CJO=46.2p M=0.333 N=2.12 TT=4.32u )
\r
9190 *SRC=KBP206G;DI_KBP206G;Diodes;Si; 600V 2.00A 3.00us Diodes Inc. Bridge -- for one element
\r
9191 .MODEL DI_KBP206G D ( IS=143n RS=21.1m BV=600 IBV=5.00u
\r
9192 + CJO=46.2p M=0.333 N=2.12 TT=4.32u )
\r
9194 *SRC=KBP208G;DI_KBP208G;Diodes;Si; 800V 2.00A 3.00us Diodes Inc. Bridge -- for one element
\r
9195 .MODEL DI_KBP208G D ( IS=143n RS=21.1m BV=800 IBV=5.00u
\r
9196 + CJO=46.2p M=0.333 N=2.12 TT=4.32u )
\r
9198 *SRC=KBP210G;DI_KBP210G;Diodes;Si; 1.00kV 2.00A 3.00us Diodes Inc. Bridge -- for one element
\r
9199 .MODEL DI_KBP210G D ( IS=143n RS=21.1m BV=1.00k IBV=5.00u
\r
9200 + CJO=46.2p M=0.333 N=2.12 TT=4.32u )
\r
9202 *SRC=PBPC301;DI_PBPC301;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. Bridge Rectifier, per element
\r.MODEL DI_PBPC301 D ( IS=492n RS=14.1m BV=50.0 IBV=10.0u
\r+ CJO=102p M=0.333 N=2.45 TT=4.32u ) )
\r
9204 *SRC=PBPC302;DI_PBPC302;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. Bridge Rectifier, per element
\r.MODEL DI_PBPC302 D ( IS=492n RS=14.1m BV=100 IBV=10.0u
\r+ CJO=102p M=0.333 N=2.45 TT=4.32u ) )
\r
9206 *SRC=PBPC303;DI_PBPC303;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. Bridge Rectifier, per element
\r.MODEL DI_PBPC303 D ( IS=492n RS=14.1m BV=200 IBV=10.0u
\r+ CJO=102p M=0.333 N=2.45 TT=4.32u ) )
\r
9208 *SRC=PBPC304;DI_PBPC304;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. Bridge Rectifier, per element
\r.MODEL DI_PBPC304 D ( IS=492n RS=14.1m BV=400 IBV=10.0u
\r+ CJO=102p M=0.333 N=2.45 TT=4.32u ) )
\r
9210 *SRC=PBPC305;DI_PBPC305;Diodes;Si; 600V 3.00A 3.00us Diodes Inc. Bridge Rectifier, per element
\r.MODEL DI_PBPC305 D ( IS=492n RS=14.1m BV=600 IBV=10.0u
\r+ CJO=102p M=0.333 N=2.45 TT=4.32u ) )
\r
9212 *SRC=PBPC306;DI_PBPC306;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. Bridge Rectifier, per element
\r.MODEL DI_PBPC306 D ( IS=492n RS=14.1m BV=800 IBV=10.0u
\r+ CJO=102p M=0.333 N=2.45 TT=4.32u ) )
\r
9214 *SRC=PBPC307;DI_PBPC307;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. Bridge Rectifier, per element
\r.MODEL DI_PBPC307 D ( IS=492n RS=14.1m BV=1.00k IBV=10.0u
\r+ CJO=102p M=0.333 N=2.45 TT=4.32u ) )
\r
9216 *SRC=RH02;DI_RH02;Diodes;Si; 200V 0.500A 150ns Diodes Inc. Fast Recovery Bridge Rectifier, per node
\r
9217 .MODEL DI_RH02 D ( IS=2.25n RS=0.100 BV=200 IBV=5.00u
\r
9218 + CJO=24.0p M=0.333 N=1.70 TT=216n )
\r
9220 *SRC=RH04;DI_RH04;Diodes;Si; 400V 0.500A 150ns Diodes Inc. Fast Recovery Bridge Rectifier, per node
\r
9221 .MODEL DI_RH04 D ( IS=2.25n RS=0.100 BV=400 IBV=5.00u
\r
9222 + CJO=24.0p M=0.333 N=1.70 TT=216n )
\r
9224 *SRC=RH06;DI_RH06;Diodes;Si; 600V 0.500A 250ns Diodes Inc. Fast Recovery Bridge Rectifier, per node
\r
9225 .MODEL DI_RH06 D ( IS=2.25n RS=0.100 BV=600 IBV=5.00u
\r
9226 + CJO=24.0p M=0.333 N=1.70 TT=360n )
\r
9228 *SRC=W005G;DI_W005G;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r
9229 .MODEL DI_W005G D ( IS=8.63u RS=28.0m BV=50.0 IBV=5.00u
\r
9230 + CJO=22.5p M=0.333 N=3.21 TT=4.32u )
\r
9232 *SRC=W01G;DI_W01G;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r
9233 .MODEL DI_W01G D ( IS=8.63u RS=28.0m BV=100 IBV=5.00u
\r
9234 + CJO=22.5p M=0.333 N=3.21 TT=4.32u )
\r
9236 *SRC=W02G;DI_W02G;Diodes;Si; 200V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r
9237 .MODEL DI_W02G D ( IS=8.63u RS=28.0m BV=200 IBV=5.00u
\r
9238 + CJO=22.5p M=0.333 N=3.21 TT=4.32u )
\r
9240 *SRC=W04G;DI_W04G;Diodes;Si; 400V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r
9241 .MODEL DI_W04G D ( IS=8.63u RS=28.0m BV=400 IBV=5.00u
\r
9242 + CJO=22.5p M=0.333 N=3.21 TT=4.32u )
\r
9244 *SRC=W06G;DI_W06G;Diodes;Si; 600V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r
9245 .MODEL DI_W06G D ( IS=8.63u RS=28.0m BV=600 IBV=5.00u
\r
9246 + CJO=22.5p M=0.333 N=3.21 TT=4.32u )
\r
9248 *SRC=W08G;DI_W08G;Diodes;Si; 800V 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r
9249 .MODEL DI_W08G D ( IS=8.63u RS=28.0m BV=800 IBV=5.00u
\r
9250 + CJO=22.5p M=0.333 N=3.21 TT=4.32u )
\r
9252 *SRC=W10G;DI_W10G;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc. Bridge -- for one element
\r
9253 .MODEL DI_W10G D ( IS=8.63u RS=28.0m BV=1.00k IBV=5.00u
\r
9254 + CJO=22.5p M=0.333 N=3.21 TT=4.32u )
\r
9256 *SRC=1N5817M;DI_1N5817M;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
9257 .MODEL DI_1N5817M D ( IS=363u RS=25.0m BV=20.0 IBV=1.00m
\r
9258 + CJO=239p M=0.333 N=1.70 TT=7.20n )
\r
9260 *SRC=1N5818M;DI_1N5818M;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
9261 .MODEL DI_1N5818M D ( IS=388u RS=55.3m BV=30.0 IBV=1.00m
\r
9262 + CJO=239p M=0.333 N=1.70 TT=7.20n )
\r
9264 *SRC=1N5819HW;DI_1N5819HW;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc.
\r
9266 .MODEL DI_1N5819HW D ( IS=191u RS=42.0m BV=40.0 IBV=1.00m
\r
9267 + CJO=239p M=0.333 N=1.70 TT=7.20n )
\r
9269 *SRC=1N5819M;DI_1N5819M;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
9270 .MODEL DI_1N5819M D ( IS=41.5u RS=70.4m BV=40.0 IBV=1.00m
\r
9271 + CJO=239p M=0.333 N=1.70 TT=7.20n )
\r
9273 *SRC=B0520LW;DI_B0520LW;Diodes;Si; 20.0V 0.500A 5.00ns Diodes Inc. Schottky
\r\r
9274 .MODEL DI_B0520LW D ( IS=195u RS=49.4m BV=20.0 IBV=250u
\r\r
9275 + CJO=199p M=0.333 N=1.72 TT=7.20n )
\r
9277 *SRC=B0520WS;DI_B0520WS;Diodes;Si; 20.0V 0.500A 5.00ns Diodes Inc. Schottky rectifier
\r
9278 .MODEL DI_B0520WS D ( IS=1.96u RS=0.131 BV=20.0 IBV=250u
\r
9279 + CJO=170p M=0.333 N=0.907 TT=7.20u )
\r
9281 *SRC=B0530W;DI_B0530W;Diodes;Si; 30.0V 0.500A 5.00ns Diodes Inc. Schottky
\r
9282 .MODEL DI_B0530W D ( IS=47.4u RS=26.8m BV=30.0 IBV=130u
\r
9283 + CJO=225p M=0.333 N=1.66 TT=7.20n )
\r
9285 *SRC=B0530WS;DI_B0530WS;Diodes;Si; 30.0V 0.500A 10.0ns Diodes Inc. Schottky
\r
9286 .MODEL DI_B0530WS D ( IS=897u RS=72.9m BV=30.0 IBV=500u
\r
9287 + CJO=79.6p M=0.333 N=2.85 TT=14.4n )
\r
9289 *SRC=B0540W;DI_B0540W;Diodes;Si; 40.0V 0.500A 10.0ns Diodes Inc. Schottky
\r
9290 .MODEL DI_B0540W D ( IS=55.9p RS=0.125 BV=40.0 IBV=20.0u
\r
9291 + CJO=225p M=0.333 N=0.700 TT=14.4n )
\r
9293 *SRC=B1100;DI_B1100;Diodes;Si; 100V 1.00A 5.00ns Diodes Inc. Schottky
\r
9294 .MODEL DI_B1100 D ( IS=89.3u RS=42.2m BV=100 IBV=500n
\r
9295 + CJO=66.3p M=0.333 N=2.45 TT=7.20n )
\r
9297 *SRC=B1100B;DI_B1100B;Diodes;Si; 100V 1.00A 5.00ns Diodes Inc.
\r
9299 .MODEL DI_B1100B D ( IS=89.3u RS=42.2m BV=100 IBV=500n
\r
9300 + CJO=66.3p M=0.333 N=2.45 TT=7.20n )
\r
9302 *SRC=B1100LB;DI_B1100LB;Diodes;Si; 100V 1.00A 10.0ns Diodes Inc.
\r
9304 .MODEL DI_B1100LB D ( IS=20.0n RS=24.7m BV=100 IBV=500n
\r
9305 + CJO=225p M=0.333 N=1.22 TT=14.4n )
\r
9307 *SRC=B120;DI_B120;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
9308 .MODEL DI_B120 D ( IS=39.6u RS=50.2m BV=20.0 IBV=500u
\r
9309 + CJO=265p M=0.333 N=1.70 TT=7.20n )
\r
9311 *SRC=B120B;DI_B120B;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
9312 .MODEL DI_B120B D ( IS=39.6u RS=50.2m BV=20.0 IBV=500u
\r
9313 + CJO=265p M=0.333 N=1.70 TT=7.20n )
\r
9315 *SRC=B130;DI_B130;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
9316 .MODEL DI_B130 D ( IS=39.6u RS=50.2m BV=30.0 IBV=500u
\r
9317 + CJO=265p M=0.333 N=1.70 TT=7.20n )
\r
9319 *SRC=B130B;DI_B130B;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
9320 .MODEL DI_B130B D ( IS=39.6u RS=50.2m BV=30.0 IBV=500u
\r
9321 + CJO=265p M=0.333 N=1.70 TT=7.20n )
\r
9323 *SRC=B130L;DI_B130L;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
9324 .MODEL DI_B130L D ( IS=188u RS=18.5m BV=30.0 IBV=1.00m
\r
9325 + CJO=331p M=0.333 N=1.65 TT=7.20n )
\r
9327 *SRC=B130LAW;DI_B130LAW;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc.
\r
9329 .MODEL DI_B130LAW D ( IS=407u RS=75.5m BV=30.0 IBV=1.00m
\r
9330 + CJO=119p M=0.333 N=1.70 TT=7.20n )
\r
9332 *SRC=B130LB;DI_B130LB;Diodes;Si; 30.0V 1.00A 10.0ns Diodes Inc.
\r
9334 .MODEL DI_B130LB D ( IS=458u RS=28.0m BV=30.0 IBV=1.00m
\r
9335 + CJO=159p M=0.333 N=1.70 TT=14.4n )
\r
9337 *SRC=B140;DI_B140;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
9338 .MODEL DI_B140 D ( IS=39.6u RS=50.2m BV=40.0 IBV=500u
\r
9339 + CJO=265p M=0.333 N=1.70 TT=7.20n )
\r
9341 *SRC=B140B;DI_B140B;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
9342 .MODEL DI_B140B D ( IS=39.6u RS=50.2m BV=40.0 IBV=500u
\r
9343 + CJO=265p M=0.333 N=1.70 TT=7.20n )
\r
9345 *SRC=B140HB;DI_B140HB;Diodes;Si; 40.0V 1.00A 10.0ns Diodes Inc.
\r
9347 .MODEL DI_B140HB D ( IS=31.0u RS=42.1m BV=40.0 IBV=1.00m
\r
9348 + CJO=159p M=0.333 N=1.70 TT=14.4n )
\r
9350 *SRC=B150;DI_B150;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
9351 .MODEL DI_B150 D ( IS=15.7u RS=42.0m BV=50.0 IBV=500u
\r
9352 + CJO=133p M=0.333 N=1.70 TT=7.20n )
\r
9354 *SRC=B150B;DI_B150B;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
9355 .MODEL DI_B150B D ( IS=15.7u RS=42.0m BV=50.0 IBV=500u
\r
9356 + CJO=133p M=0.333 N=1.70 TT=7.20n )
\r
9358 *SRC=B160;DI_B160;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
9359 .MODEL DI_B160 D ( IS=15.7u RS=42.0m BV=60.0 IBV=500u
\r
9360 + CJO=133p M=0.333 N=1.70 TT=7.20n )
\r
9362 *SRC=B160B;DI_B160B;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
9363 .MODEL DI_B160B D ( IS=15.7u RS=42.0m BV=60.0 IBV=500u
\r
9364 + CJO=133p M=0.333 N=1.70 TT=7.20n )
\r
9366 *SRC=B170;DI_B170;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
9367 .MODEL DI_B170 D ( IS=89.3u RS=42.2m BV=70.0 IBV=500n
\r
9368 + CJO=66.3p M=0.333 N=2.45 TT=7.20n )
\r
9370 *SRC=B170B;DI_B170B;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
9371 .MODEL DI_B170B D ( IS=89.3u RS=42.2m BV=70.0 IBV=500n
\r
9372 + CJO=66.3p M=0.333 N=2.45 TT=7.20n )
\r
9374 *SRC=B180;DI_B180;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
9375 .MODEL DI_B180 D ( IS=89.3u RS=42.2m BV=80.0 IBV=500n
\r
9376 + CJO=66.3p M=0.333 N=2.45 TT=7.20n )
\r
9378 *SRC=B180B;DI_B180B;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
9379 .MODEL DI_B180B D ( IS=89.3u RS=42.2m BV=80.0 IBV=500n
\r
9380 + CJO=66.3p M=0.333 N=2.45 TT=7.20n )
\r
9382 *SRC=B190;DI_B190;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
9383 .MODEL DI_B190 D ( IS=89.3u RS=42.2m BV=90.0 IBV=500n
\r
9384 + CJO=66.3p M=0.333 N=2.45 TT=7.20n )
\r
9386 *SRC=B190B;DI_B190B;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
9387 .MODEL DI_B190B D ( IS=89.3u RS=42.2m BV=90.0 IBV=500n
\r
9388 + CJO=66.3p M=0.333 N=2.45 TT=7.20n )
\r
9390 *SRC=B2100;DI_B2100;Diodes;Si; 100.0V 2.00A 10.0ns Diodes Inc Schottky
\r
9391 .MODEL DI_B2100 D ( IS=746u RS=21.0m BV=100.0 IBV=500u
\r
9392 + CJO=179p M=0.333 N=2.87 TT=14.4n )
\r
9394 *SRC=B220;DI_B220;Diodes;Si; 20.0V 2.00A 1.00ns Diodes Inc.
\r
9395 .MODEL DI_B220 D ( IS=7.98u RS=13.4m BV=20.0 IBV=500u
\r
9396 + CJO=370p M=0.333 N=1.13 TT=1.44n )
\r
9398 *SRC=B220A;DI_B220A;Diodes;Si; 20.0V 2.00A 1.00ns Diodes Inc.
\r
9399 .MODEL DI_B220A D ( IS=7.98u RS=13.4m BV=20.0 IBV=500u
\r
9400 + CJO=370p M=0.333 N=1.13 TT=1.44n )
\r
9402 *SRC=B230;DI_B230;Diodes;Si; 30.0V 2.00A 1.00ns Diodes Inc.
\r
9403 .MODEL DI_B230 D ( IS=7.98u RS=13.4m BV=30.0 IBV=500u
\r
9404 + CJO=370p M=0.333 N=1.13 TT=1.44n )
\r
9406 *SRC=B230A;DI_B230A;Diodes;Si; 30.0V 2.00A 1.00ns Diodes Inc.
\r
9407 .MODEL DI_B230A D ( IS=7.98u RS=13.4m BV=30.0 IBV=500u
\r
9408 + CJO=370p M=0.333 N=1.13 TT=1.44n )
\r
9410 *SRC=B240;DI_B240;Diodes;Si; 40.0V 2.00A 1.00ns Diodes Inc.
\r
9411 .MODEL DI_B240 D ( IS=7.98u RS=13.4m BV=40.0 IBV=500u
\r
9412 + CJO=370p M=0.333 N=1.13 TT=1.44n )
\r
9414 *SRC=B240A;DI_B240A;Diodes;Si; 40.0V 2.00A 1.00ns Diodes Inc.
\r
9415 .MODEL DI_B240A D ( IS=7.98u RS=13.4m BV=40.0 IBV=500u
\r
9416 + CJO=370p M=0.333 N=1.13 TT=1.44n )
\r
9418 *SRC=B250;DI_B250;Diodes;Si; 50.0V 2.00A 1.00ns Diodes Inc.
\r
9419 .MODEL DI_B250 D ( IS=6.08u RS=14.9m BV=50.0 IBV=500u
\r
9420 + CJO=370p M=0.333 N=1.55 TT=1.44n )
\r
9422 *SRC=B250A;DI_B250A;Diodes;Si; 50.0V 2.00A 1.00ns Diodes Inc.
\r
9423 .MODEL DI_B250A D ( IS=6.08u RS=14.9m BV=50.0 IBV=500u
\r
9424 + CJO=370p M=0.333 N=1.55 TT=1.44n )
\r
9426 *SRC=B260;DI_B260;Diodes;Si; 60.0V 2.00A 1.00ns Diodes Inc.
\r
9427 .MODEL DI_B260 D ( IS=6.08u RS=14.9m BV=60.0 IBV=500u
\r
9428 + CJO=370p M=0.333 N=1.55 TT=1.44n )
\r
9430 *SRC=B260A;DI_B260A;Diodes;Si; 60.0V 2.00A 1.00ns Diodes Inc.
\r
9431 .MODEL DI_B260A D ( IS=6.08u RS=14.9m BV=60.0 IBV=500u
\r
9432 + CJO=370p M=0.333 N=1.55 TT=1.44n )
\r
9434 *SRC=B270;DI_B270;Diodes;Si; 70.0V 2.00A 10.0ns Diodes Inc Schottky
\r
9435 .MODEL DI_B270 D ( IS=746u RS=21.0m BV=70.0 IBV=500u
\r
9436 + CJO=179p M=0.333 N=2.87 TT=14.4n )
\r
9438 *SRC=B280;DI_B280;Diodes;Si; 80.0V 2.00A 10.0ns Diodes Inc Schottky
\r
9439 .MODEL DI_B280 D ( IS=746u RS=21.0m BV=80.0 IBV=500u
\r
9440 + CJO=179p M=0.333 N=2.87 TT=14.4n )
\r
9442 *SRC=B290;DI_B290;Diodes;Si; 90.0V 2.00A 10.0ns Diodes Inc Schottky
\r
9443 .MODEL DI_B290 D ( IS=746u RS=21.0m BV=90.0 IBV=500u
\r
9444 + CJO=179p M=0.333 N=2.87 TT=14.4n )
\r
9446 *SRC=B3100;DI_B3100;Diodes;Si; 100V 3.00A 10.0ns Diodes Inc. Schottky
\r
9447 .MODEL DI_B3100 D ( IS=916u RS=14.1m BV=100 IBV=500u
\r
9448 + CJO=159p M=0.333 N=3.04 TT=14.4n )
\r
9450 *SRC=B320;DI_B320;Diodes;Si; 20.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
9451 .MODEL DI_B320 D ( IS=9.90n RS=14.0m BV=20.0 IBV=500u
\r
9452 + CJO=464p M=0.333 N=0.775 TT=7.20n )
\r
9454 *SRC=B320A;DI_B320A;Diodes;Si; 20.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
9455 .MODEL DI_B320A D ( IS=9.90n RS=14.0m BV=20.0 IBV=500u
\r
9456 + CJO=464p M=0.333 N=0.775 TT=7.20n )
\r
9458 *SRC=B320B;DI_B320B;Diodes;Si; 20.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
9459 .MODEL DI_B320B D ( IS=9.90n RS=14.0m BV=20.0 IBV=500u
\r
9460 + CJO=464p M=0.333 N=0.775 TT=7.20n )
\r
9462 *SRC=B330;DI_B330;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
9463 .MODEL DI_B330 D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u
\r
9464 + CJO=464p M=0.333 N=0.775 TT=7.20n )
\r
9466 *SRC=B330A;DI_B330A;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
9467 .MODEL DI_B330A D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u
\r
9468 + CJO=464p M=0.333 N=0.775 TT=7.20n )
\r
9470 *SRC=B330B;DI_B330B;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
9471 .MODEL DI_B330B D ( IS=9.90n RS=14.0m BV=30.0 IBV=500u
\r
9472 + CJO=464p M=0.333 N=0.775 TT=7.20n )
\r
9474 *SRC=B340;DI_B340;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
9475 .MODEL DI_B340 D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u
\r
9476 + CJO=464p M=0.333 N=0.775 TT=7.20n )
\r
9478 *SRC=B340A;DI_B340A;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
9479 .MODEL DI_B340A D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u
\r
9480 + CJO=464p M=0.333 N=0.775 TT=7.20n )
\r
9482 *SRC=B340B;DI_B340B;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
9483 .MODEL DI_B340B D ( IS=9.90n RS=14.0m BV=40.0 IBV=500u
\r
9484 + CJO=464p M=0.333 N=0.775 TT=7.20n )
\r
9486 *SRC=B340LA;DI_B340LA;Diodes;Si; 40.0V 3.00A 10.0ns Diodes Inc.
\r
9488 .MODEL DI_B340LA D ( IS=1.15m RS=17.8m BV=40.0 IBV=2.00m
\r
9489 + CJO=411p M=0.333 N=1.70 TT=14.4n )
\r
9491 *SRC=B340LB;DI_B340LB;Diodes;Si; 40.0V 3.00A 10.0ns Diodes Inc.
\r
9493 .MODEL DI_B340LB D ( IS=1.15m RS=17.8m BV=40.0 IBV=2.00m
\r
9494 + CJO=411p M=0.333 N=1.70 TT=14.4n )
\r
9496 *SRC=B350;DI_B350;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
9497 .MODEL DI_B350 D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u
\r
9498 + CJO=464p M=0.333 N=0.775 TT=7.20n )
\r
9500 *SRC=B350A;DI_B350A;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
9501 .MODEL DI_B350A D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u
\r
9502 + CJO=464p M=0.333 N=0.775 TT=7.20n )
\r
9504 *SRC=B350B;DI_B350B;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
9505 .MODEL DI_B350B D ( IS=9.90n RS=14.0m BV=50.0 IBV=500u
\r
9506 + CJO=464p M=0.333 N=0.775 TT=7.20n )
\r
9508 *SRC=B360;DI_B360;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
9509 .MODEL DI_B360 D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u
\r
9510 + CJO=464p M=0.333 N=0.775 TT=7.20n )
\r
9512 *SRC=B360A;DI_B360A;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
9513 .MODEL DI_B360A D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u
\r
9514 + CJO=464p M=0.333 N=0.775 TT=7.20n )
\r
9516 *SRC=B360B;DI_B360B;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
9517 .MODEL DI_B360B D ( IS=9.90n RS=14.0m BV=60.0 IBV=500u
\r
9518 + CJO=464p M=0.333 N=0.775 TT=7.20n )
\r
9520 *SRC=B370;DI_B370;Diodes;Si; 70.0V 3.00A 10.0ns Diodes Inc. Schottky
\r
9521 .MODEL DI_B370 D ( IS=916u RS=14.1m BV=70.0 IBV=500u
\r
9522 + CJO=159p M=0.333 N=3.04 TT=14.4n )
\r
9524 *SRC=B380;DI_B380;Diodes;Si; 80.0V 3.00A 10.0ns Diodes Inc. Schottky
\r
9525 .MODEL DI_B380 D ( IS=916u RS=14.1m BV=80.0 IBV=500u
\r
9526 + CJO=159p M=0.333 N=3.04 TT=14.4n )
\r
9528 *SRC=B390;DI_B390;Diodes;Si; 90.0V 3.00A 10.0ns Diodes Inc. Schottky
\r
9529 .MODEL DI_B390 D ( IS=916u RS=14.1m BV=90.0 IBV=500u
\r
9530 + CJO=159p M=0.333 N=3.04 TT=14.4n )
\r
9532 *SRC=B520C;DI_B520C;Diodes;Si; 20.0V 5.00A 5.00ns Diodes Inc. Schottky
\r
9533 .MODEL DI_B520C D ( IS=617u RS=10.0m BV=20.0 IBV=500u
\r
9534 + CJO=497p M=0.333 N=1.70 TT=7.20n )
\r
9536 *SRC=B530C;DI_B530C;Diodes;Si; 30.0V 5.00A 5.00ns Diodes Inc. Schottky
\r
9537 .MODEL DI_B530C D ( IS=617u RS=10.0m BV=30.0 IBV=500u
\r
9538 + CJO=497p M=0.333 N=1.70 TT=7.20n )
\r
9540 *SRC=B540C;DI_B540C;Diodes;Si; 40.0V 5.00A 5.00ns Diodes Inc. Schottky
\r
9541 .MODEL DI_B540C D ( IS=617u RS=10.0m BV=40.0 IBV=500u
\r
9542 + CJO=497p M=0.333 N=1.70 TT=7.20n )
\r
9544 *SRC=B550C;DI_B550C;Diodes;Si; 50.0V 5.00A 5.00ns Diodes Inc. Schottky
\r
9545 .MODEL DI_B550C D ( IS=66.7u RS=14.1m BV=50.0 IBV=500u
\r
9546 + CJO=497p M=0.333 N=1.70 TT=7.20n )
\r
9548 *SRC=B560C;DI_B560C;Diodes;Si; 60.0V 5.00A 5.00ns Diodes Inc. Schottky
\r
9549 .MODEL DI_B560C D ( IS=66.7u RS=14.1m BV=60.0 IBV=500u
\r
9550 + CJO=497p M=0.333 N=1.70 TT=7.20n )
\r
9552 *SRC=BAT1000;DI_BAT1000;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky Barrier Rectifier
\r
9553 .MODEL DI_BAT1000 D ( IS=874n RS=65.3m BV=40.0 IBV=100u
\r
9554 + CJO=175p M=0.333 N=0.823 TT=7.20n )
\r
9556 *SRC=BAT400D;DI_BAT400D;Diodes;Si; 40.0V 0.500A 5.00ns Diodes Inc. Schottky
\r
9557 .MODEL DI_BAT400D D ( IS=1.80u RS=0.103 BV=40.0 IBV=50.0u
\r
9558 + CJO=119p M=0.333 N=1.26 TT=7.20n )
\r
9560 *SRC=BAT750;DI_BAT750;Diodes;Si; 40.0V 0.750A 5.00ns Diodes Inc. Schottky
\r
9561 .MODEL DI_BAT750 D ( IS=23.1u RS=82.3m BV=40.0 IBV=100u
\r
9562 + CJO=225p M=0.333 N=1.16 TT=7.20n )
\r
9564 *SRC=MBRB1530CT;DI_MBRB1530CT;Diodes;Si; 30.0V 15.0A 30.0ns Diodes
\r
9565 Inc. Schottky -- one element of device
\r
9566 .MODEL DI_MBRB1530CT D ( IS=71.5u RS=2.81m BV=30.0 IBV=100u
\r
9567 + CJO=464p M=0.333 N=1.61 TT=43.2n )
\r
9569 *SRC=MBRB1535CT;DI_MBRB1535CT;Diodes;Si; 35.0V 15.0A 30.0ns Diodes
\r
9570 Inc. Schottky -- one element of device
\r
9571 .MODEL DI_MBRB1535CT D ( IS=71.5u RS=2.81m BV=35.0 IBV=100u
\r
9572 + CJO=464p M=0.333 N=1.61 TT=43.2n )
\r
9574 *SRC=MBRB1540CT;DI_MBRB1540CT;Diodes;Si; 40.0V 15.0A 30.0ns Diodes
\r
9575 Inc. Schottky -- one element of device
\r
9576 .MODEL DI_MBRB1540CT D ( IS=71.5u RS=2.81m BV=40.0 IBV=100u
\r
9577 + CJO=464p M=0.333 N=1.61 TT=43.2n )
\r
9579 *SRC=MBRB1540CT;DI_MBRB1540CT;Diodes;Si; 40.0V 15.0A 30.0ns Diodes
\r
9580 Inc. Schottky -- one element of device
\r
9581 .MODEL DI_MBRB1540CT D ( IS=71.5u RS=2.81m BV=40.0 IBV=100u
\r
9582 + CJO=464p M=0.333 N=1.61 TT=43.2n )
\r
9584 *SRC=MBRB20100CT;DI_MBRB20100CT;Diodes;Si; 100V 20.0A 10.0ns Diodes Inc. Schottky Rectifier, Dual Unit, Model for One Node
\r
9585 .MODEL DI_MBRB20100CT D ( IS=750u RS=3.34m BV=100 IBV=100u
\r
9586 + CJO=508p M=0.333 N=2.41 TT=14.4n )
\r
9588 *SRC=MBRB2070CT;DI_MBRB2070CT;Diodes;Si; 70.0V 20.0A 10.0ns Diodes Inc. Schottky Rectifier, Dual Unit, Model for One Node
\r
9589 .MODEL DI_MBRB2070CT D ( IS=750u RS=3.34m BV=70.0 IBV=100u
\r
9590 + CJO=508p M=0.333 N=2.41 TT=14.4n )
\r
9592 *SRC=MBRB2080CT;DI_MBRB2080CT;Diodes;Si; 80.0V 20.0A 10.0ns Diodes Inc. Schottky Rectifier, Dual Unit, Model for One Node
\r
9593 .MODEL DI_MBRB2080CT D ( IS=750u RS=3.34m BV=80.0 IBV=100u
\r
9594 + CJO=508p M=0.333 N=2.41 TT=14.4n )
\r
9596 *SRC=MBRB2090CT;DI_MBRB2090CT;Diodes;Si; 90.0V 20.0A 10.0ns Diodes Inc. Schottky Rectifier, Dual Unit, Model for One Node
\r
9597 .MODEL DI_MBRB2090CT D ( IS=750u RS=3.34m BV=90.0 IBV=100u
\r
9598 + CJO=508p M=0.333 N=2.41 TT=14.4n )
\r
9600 *SRC=MBRD1035CTL;DI_MBRD1035CTL;Diodes;Si; 35.0V 5.00A 10.0ns Diodes Inc Schottky, Dual, Model for one node
\r.MODEL DI_MBRD1035CTL D ( IS=2.14m RS=6.38m BV=35.0 IBV=2.00m
\r+ CJO=629p M=0.333 N=3.30 TT=14.4n )
\r
9602 *SRC=MBRD1040;DI_MBRD1040;Diodes;Si; 40.0V 10.0A 5.00ns Diodes Inc.
\r
9604 .MODEL DI_MBRD1040 D ( IS=354u RS=4.20m BV=40.0 IBV=300u
\r
9605 + CJO=2.65n M=0.333 N=1.19 TT=7.20n )
\r
9607 *SRC=MBRD1040CT;DI_MBRD1040CT;Diodes;Si; 40.0V 5.00A 10.0ns Diodes Inc Schottky, Dual, Model for one node
\r.MODEL DI_MBRD1040CT D ( IS=2.14m RS=6.38m BV=40.0 IBV=150u
\r+ CJO=925p M=0.333 N=3.30 TT=14.4n )
\r
9609 *SRC=MBRD460CT;DI_MBRD460CT;Diodes;Si; 60.0V 2.00A 10.0ns Diodes Inc Schottky, Dual, Model for one node
\r.MODEL DI_MBRD460CT D ( IS=1.45m RS=7.62u BV=60.0 IBV=100u
\r+ CJO=333p M=0.333 N=4.78 TT=14.4n )
\r
9611 *SRC=MBRD835L;DI_MBRD835L;Diodes;Si; 35.0V 8.00A 10.0ns Diodes Inc Schottky
\r.MODEL DI_MBRD835L D ( IS=9.28u RS=9.26m BV=35.0 IBV=1.40m
\r+ CJO=1.11n M=0.333 N=1.06 TT=14.4n )
\r
9613 *SRC=MBRM3100;DI_MBRM3100;Diodes;Si; 100V 3.00A 5.00ns Diodes Inc. Schottky
\r
9614 .MODEL DI_MBRM3100 D ( IS=88.1u RS=14.0m BV=100 IBV=100u
\r
9615 + CJO=239p M=0.333 N=2.12 TT=7.20n )
\r
9617 *SRC=MBRM360;DI_MBRM360;Diodes;Si; 60.0V 3.00A 10.0ns Diodes Inc. Schottky
\r
9618 .MODEL DI_MBRM360 D ( IS=5.99u RS=16.5m BV=60.0 IBV=200u
\r
9619 + CJO=240p M=0.333 N=1.27 TT=14.4n )
\r
9621 *SRC=MBRM5100;DI_MBRM5100;Diodes;Si; 100V 5.00A 10.0ns Diodes Inc. Schottky
\r
9622 .MODEL DI_MBRM5100 D ( IS=62.9u RS=6.79m BV=100 IBV=200u
\r
9623 + CJO=530p M=0.333 N=1.88 TT=14.4n )
\r
9625 *SRC=MBRM560;DI_MBRM560;Diodes;Si; 60.0V 5.00A 5.00ns Diodes Inc. Schottky
\r
9626 .MODEL DI_MBRM560 D ( IS=20.1u RS=8.40m BV=60.0 IBV=200u
\r
9627 + CJO=207p M=0.333 N=1.70 TT=7.20n )
\r
9629 *SRC=MBRM760;DI_MBRM760;Diodes;Si; 60.0V 7.00A 10.0ns Diodes Inc Schottky
\r.MODEL DI_MBRM760 D ( IS=849n RS=9.63m BV=60.0 IBV=200u
\r+ CJO=693p M=0.333 N=1.07 TT=14.4n )
\r
9631 *SRC=SBG1025L;DI_SBG1025L;Diodes;Si; 25.0V 10.0A 5.00ns Diodes Inc.
\r
9633 .MODEL DI_SBG1025L D ( IS=2.36u RS=7.72m BV=25.0 IBV=1.00m
\r
9634 + CJO=636p M=0.333 N=0.722 TT=7.20n )
\r
9636 *SRC=SBG1030CT;DI_SBG1030CT;Diodes;Si; 30.0V 10.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBG1030CT D ( IS=47.2u RS=6.69m BV=30.0 IBV=1.00m
\r+ CJO=398p M=0.333 N=1.41 TT=7.20n )
\r
9638 *SRC=SBG1030L;DI_SBG1030L;Diodes;Si; 30.0V 10.0A 5.00ns Diodes Inc.
\r
9640 .MODEL DI_SBG1030L D ( IS=2.36u RS=7.72m BV=30.0 IBV=1.00m
\r
9641 + CJO=636p M=0.333 N=0.722 TT=7.20n )
\r
9643 *SRC=SBG1035CT;DI_SBG1035CT;Diodes;Si; 35.0V 10.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBG1035CT D ( IS=47.2u RS=6.69m BV=35.0 IBV=1.00m
\r+ CJO=398p M=0.333 N=1.41 TT=7.20n )
\r
9645 *SRC=SBG1040CT;DI_SBG1040CT;Diodes;Si; 40.0V 10.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBG1040CT D ( IS=47.2u RS=6.69m BV=40.0 IBV=1.00m
\r+ CJO=398p M=0.333 N=1.41 TT=7.20n )
\r
9647 *SRC=SBG1045CT;DI_SBG1045CT;Diodes;Si; 45.0V 10.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBG1045CT D ( IS=47.2u RS=6.69m BV=45.0 IBV=1.00m
\r+ CJO=398p M=0.333 N=1.41 TT=7.20n )
\r
9649 *SRC=SBG1630CT;DI_SBG1630CT;Diodes;Si; 30.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBG1630CT D ( IS=47.2u RS=6.69m BV=30.0 IBV=1.00m
\r+ CJO=464p M=0.333 N=1.41 TT=7.20n )
\r
9651 *SRC=SBG1635CT;DI_SBG1635CT;Diodes;Si; 35.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBG1635CT D ( IS=47.2u RS=6.69m BV=35.0 IBV=1.00m
\r+ CJO=464p M=0.333 N=1.41 TT=7.20n )
\r
9653 *SRC=SBG1640CT;DI_SBG1640CT;Diodes;Si; 40.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBG1640CT D ( IS=47.2u RS=6.69m BV=40.0 IBV=1.00m
\r+ CJO=464p M=0.333 N=1.41 TT=7.20n )
\r
9655 *SRC=SBG1645CT;DI_SBG1645CT;Diodes;Si; 45.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r
9656 .MODEL DI_SBG1645CT D ( IS=47.2u RS=6.69m BV=45.0 IBV=1.00m
\r
9657 + CJO=464p M=0.333 N=1.41 TT=7.20n )
\r
9659 *SRC=SBG2030CT;DI_SBG2030CT;Diodes;Si; 30.0V 20.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r
9660 .MODEL DI_SBG2030CT D ( IS=7.84m RS=3.91m BV=30.0 IBV=1.00m
\r
9661 + CJO=1.72n M=0.333 N=2.73 TT=7.20n )
\r
9662 ===============================================================================================
\r
9664 *SRC=SBG2035CT;DI_SBG2035CT;Diodes;Si; 35.0V 20.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r
9665 .MODEL DI_SBG2035CT D ( IS=7.84m RS=3.91m BV=35.0 IBV=1.00m
\r
9666 + CJO=1.72n M=0.333 N=2.73 TT=7.20n )
\r
9667 ===============================================================================================
\r
9669 *SRC=SBG2040CT;DI_SBG2040CT;Diodes;Si; 40.0V 20.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r
9670 .MODEL DI_SBG2040CT D ( IS=7.84m RS=3.91m BV=40.0 IBV=1.00m
\r
9671 + CJO=1.72n M=0.333 N=2.73 TT=7.20n )
\r
9672 ===============================================================================================
\r
9674 *SRC=SBG2045CT;DI_SBG2045CT;Diodes;Si; 45.0V 20.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r
9675 .MODEL DI_SBG2045CT D ( IS=7.84m RS=3.91m BV=45.0 IBV=1.00m
\r
9676 + CJO=1.72n M=0.333 N=2.73 TT=7.20n )
\r
9677 ===============================================================================================
\r
9679 *SRC=SBG3030CT;DI_SBG3030CT;Diodes;Si; 30.0V 30.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r
9680 .MODEL DI_SBG3030CT D ( IS=31.1u RS=3.70m BV=30.0 IBV=1.00m
\r
9681 + CJO=796p M=0.333 N=1.17 TT=7.20n )
\r
9682 ===============================================================================================
\r
9684 *SRC=SBG3040CT;DI_SBG3040CT;Diodes;Si; 40.0V 30.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r
9685 .MODEL DI_SBG3040CT D ( IS=31.1u RS=3.70m BV=40.0 IBV=1.00m
\r
9686 + CJO=796p M=0.333 N=1.17 TT=7.20n )
\r
9687 ===============================================================================================
\r
9689 *SRC=SBG3045CT;DI_SBG3045CT;Diodes;Si; 45.0V 30.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r
9690 .MODEL DI_SBG3045CT D ( IS=31.1u RS=3.70m BV=45.0 IBV=1.00m
\r
9691 + CJO=796p M=0.333 N=1.17 TT=7.20n )
\r
9692 ===============================================================================================
\r
9694 *SRC=SBG3050CT;DI_SBG3050CT;Diodes;Si; 50.0V 30.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r
9695 .MODEL DI_SBG3050CT D ( IS=319u RS=3.50m BV=50.0 IBV=1.00m
\r
9696 + CJO=796p M=0.333 N=1.69 TT=7.20n )
\r
9697 ===============================================================================================
\r
9699 *SRC=SBG3060CT;DI_SBG3060CT;Diodes;Si; 60.0V 30.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r
9700 .MODEL DI_SBG3060CT D ( IS=319u RS=3.50m BV=60.0 IBV=1.00m
\r
9701 + CJO=796p M=0.333 N=1.69 TT=7.20n )
\r
9702 ===============================================================================================
\r
9704 *SRC=SBM1040;DI_SBM1040;Diodes;Si; 40.0V 10.0A 10.0ns Diodes Inc Schottky Rectifier
\r
9705 .MODEL DI_SBM1040 D ( IS=63.8u RS=4.18m BV=40.0 IBV=300u
\r
9706 + CJO=2.39n M=0.333 N=1.36 TT=14.4n )
\r
9708 *SRC=SBM1040CT;DI_SBM1040CT;Diodes;Si; 40.0V 5.00A 3.00us Diodes Inc. Schottky, dual, per node
\r
9709 .MODEL DI_SBM1040CT D ( IS=2.88u RS=8.40m BV=40.0 IBV=150u
\r
9710 + CJO=1.33n M=0.333 N=1.03 TT=4.32u )
\r
9712 *SRC=SBM340;DI_SBM340;Diodes;Si; 40.0V 3.00A 10.0ns Diodes Inc. Schottky
\r
9713 .MODEL DI_SBM340 D ( IS=2.98n RS=19.4m BV=40.0 IBV=500u
\r
9714 + CJO=333p M=0.333 N=0.700 TT=14.4n )
\r
9716 *SRC=SBM540;DI_SBM540;Diodes;Si; 40.0V 5.00A 10.0ns Diodes Inc. Schottky
\r
9717 .MODEL DI_SBM540 D ( IS=19.7u RS=8.40m BV=40.0 IBV=500u
\r
9718 + CJO=557p M=0.333 N=1.28 TT=14.4n )
\r
9720 *SRC=SK32;DI_SK32;Diodes;Si; 20.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
9721 .MODEL DI_SK32 D ( IS=50.5n RS=23.8m BV=20.0 IBV=500u
\r
9722 + CJO=555p M=0.333 N=0.700 TT=7.20n )
\r
9724 *SRC=SK33;DI_SK33;Diodes;Si; 30.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
9725 .MODEL DI_SK33 D ( IS=50.5n RS=23.8m BV=30.0 IBV=500u
\r
9726 + CJO=555p M=0.333 N=0.700 TT=7.20n )
\r
9728 *SRC=SK34;DI_SK34;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
9729 .MODEL DI_SK34 D ( IS=50.5n RS=23.8m BV=50.0 IBV=500u
\r
9730 + CJO=555p M=0.333 N=0.700 TT=7.20n )
\r
9732 *SRC=SK35;DI_SK35;Diodes;Si; 50.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
9733 .MODEL DI_SK35 D ( IS=234u RS=24.0m BV=50.0 IBV=500u
\r
9734 + CJO=555p M=0.333 N=1.90 TT=7.20n )
\r
9736 *SRC=SK36;DI_SK36;Diodes;Si; 60.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
9737 .MODEL DI_SK36 D ( IS=234u RS=24.0m BV=60.0 IBV=500u
\r
9738 + CJO=555p M=0.333 N=1.90 TT=7.20n )
\r
9740 *SRC=1N4001;DI_1N4001;Diodes;Si; 50.0V 1.00A 3.00us Diodes, Inc. diode
\r
9741 .MODEL DI_1N4001 D ( IS=76.9p RS=42.0m BV=50.0 IBV=5.00u
\r
9742 + CJO=39.8p M=0.333 N=1.45 TT=4.32u )
\r
9744 ***************************************************************************************************************************************
\r
9745 *SRC=1N4001G;DI_1N4001G;Diodes;Si; 50.0V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier
\r
9746 .MODEL DI_1N4001G D ( IS=65.4p RS=42.2m BV=50.0 IBV=5.00u
\r
9747 + CJO=14.8p M=0.333 N=1.36 TT=2.88u )
\r
9748 ***************************************************************************************************************************************
\r
9750 **************************************************************************************************************************************
\r
9751 *SRC=1N4001GL;DI_1N4001GL;Diodes;Si; 50.0V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier
\r
9752 .MODEL DI_1N4001GL D ( IS=65.4p RS=42.2m BV=50.0 IBV=5.00u
\r
9753 + CJO=14.8p M=0.333 N=1.36 TT=2.88u )
\r
9754 ***************************************************************************************************************************************
\r
9756 *SRC=1N4002;DI_1N4002;Diodes;Si; 100V 1.00A 3.00us Diodes, Inc. diode
\r
9757 .MODEL DI_1N4002 D ( IS=76.9p RS=42.0m BV=100 IBV=5.00u
\r
9758 + CJO=39.8p M=0.333 N=1.45 TT=4.32u )
\r
9760 ***************************************************************************************************************************************
\r
9761 *SRC=1N4002G;DI_1N4002G;Diodes;Si; 100V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier
\r
9762 .MODEL DI_1N4002G D ( IS=65.4p RS=42.2m BV=100 IBV=5.00u
\r
9763 + CJO=14.8p M=0.333 N=1.36 TT=2.88u )
\r
9764 ***************************************************************************************************************************************
\r
9766 ***************************************************************************************************************************************
\r
9767 *SRC=1N4002GL;DI_1N4002GL;Diodes;Si; 100V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier
\r
9768 .MODEL DI_1N4002GL D ( IS=65.4p RS=42.2m BV=100 IBV=5.00u
\r
9769 + CJO=14.8p M=0.333 N=1.36 TT=2.88u )
\r
9770 ***************************************************************************************************************************************
\r
9772 *SRC=1N4003;DI_1N4003;Diodes;Si; 200V 1.00A 3.00us Diodes, Inc. diode
\r
9773 .MODEL DI_1N4003 D ( IS=76.9p RS=42.0m BV=200 IBV=5.00u
\r
9774 + CJO=39.8p M=0.333 N=1.45 TT=4.32u )
\r
9776 ***************************************************************************************************************************************
\r
9777 *SRC=1N4003G;DI_1N4003G;Diodes;Si; 200V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier
\r
9778 .MODEL DI_1N4003G D ( IS=65.4p RS=42.2m BV=200 IBV=5.00u
\r
9779 + CJO=14.8p M=0.333 N=1.36 TT=2.88u )
\r
9780 ***************************************************************************************************************************************
\r
9782 ***************************************************************************************************************************************
\r
9783 *SRC=1N4003GL;DI_1N4003GL;Diodes;Si; 200V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier
\r
9784 .MODEL DI_1N4003GL D ( IS=65.4p RS=42.2m BV=200 IBV=5.00u
\r
9785 + CJO=14.8p M=0.333 N=1.36 TT=2.88u )
\r
9786 ***************************************************************************************************************************************
\r
9788 *SRC=1N4004;DI_1N4004;Diodes;Si; 400V 1.00A 3.00us Diodes, Inc. diode
\r
9789 .MODEL DI_1N4004 D ( IS=76.9p RS=42.0m BV=400 IBV=5.00u
\r
9790 + CJO=39.8p M=0.333 N=1.45 TT=4.32u )
\r
9792 ***************************************************************************************************************************************
\r
9793 *SRC=1N4004G;DI_1N4004G;Diodes;Si; 400V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier
\r
9794 .MODEL DI_1N4004G D ( IS=65.4p RS=42.2m BV=400 IBV=5.00u
\r
9795 + CJO=14.8p M=0.333 N=1.36 TT=2.88u )
\r
9796 ***************************************************************************************************************************************
\r
9798 ***************************************************************************************************************************************
\r
9799 *SRC=1N4004GL;DI_1N4004GL;Diodes;Si; 400V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier
\r
9800 .MODEL DI_1N4004GL D ( IS=65.4p RS=42.2m BV=400 IBV=5.00u
\r
9801 + CJO=14.8p M=0.333 N=1.36 TT=2.88u )
\r
9802 ***************************************************************************************************************************************
\r
9804 *SRC=1N4005;DI_1N4005;Diodes;Si; 600V 1.00A 3.00us Diodes, Inc. diode
\r
9805 .MODEL DI_1N4005 D ( IS=76.9p RS=42.0m BV=600 IBV=5.00u
\r
9806 + CJO=26.5p M=0.333 N=1.45 TT=4.32u )
\r
9808 ***************************************************************************************************************************************
\r
9809 *SRC=1N4005G;DI_1N4005G;Diodes;Si; 600V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier
\r
9810 .MODEL DI_1N4005G D ( IS=65.4p RS=42.2m BV=600 IBV=5.00u
\r
9811 + CJO=14.8p M=0.333 N=1.36 TT=2.88u )
\r
9812 ***************************************************************************************************************************************
\r
9814 ***************************************************************************************************************************************
\r
9815 *SRC=1N4005GL;DI_1N4005GL;Diodes;Si; 600V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier
\r
9816 .MODEL DI_1N4005GL D ( IS=65.4p RS=42.2m BV=600 IBV=5.00u
\r
9817 + CJO=14.8p M=0.333 N=1.36 TT=2.88u )
\r
9818 ***************************************************************************************************************************************
\r
9820 *SRC=1N4006;DI_1N4006;Diodes;Si; 800V 1.00A 3.00us Diodes, Inc. diode
\r
9821 .MODEL DI_1N4006 D ( IS=76.9p RS=42.0m BV=800 IBV=5.00u
\r
9822 + CJO=26.5p M=0.333 N=1.45 TT=4.32u )
\r
9824 ***************************************************************************************************************************************
\r
9825 *SRC=1N4006G;DI_1N4006G;Diodes;Si; 800V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier
\r
9826 .MODEL DI_1N4006G D ( IS=65.4p RS=42.2m BV=800 IBV=5.00u
\r
9827 + CJO=14.8p M=0.333 N=1.36 TT=2.88u )
\r
9828 ***************************************************************************************************************************************
\r
9830 ***************************************************************************************************************************************
\r
9831 *SRC=1N4006GL;DI_1N4006GL;Diodes;Si; 800V 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier
\r
9832 .MODEL DI_1N4006GL D ( IS=65.4p RS=42.2m BV=800 IBV=5.00u
\r
9833 + CJO=14.8p M=0.333 N=1.36 TT=2.88u )
\r
9834 ***************************************************************************************************************************************
\r
9836 *SRC=1N4007;DI_1N4007;Diodes;Si; 1.00kV 1.00A 3.00us Diodes, Inc. diode
\r
9837 .MODEL DI_1N4007 D ( IS=76.9p RS=42.0m BV=1.00k IBV=5.00u
\r
9838 + CJO=26.5p M=0.333 N=1.45 TT=4.32u )
\r
9840 ***************************************************************************************************************************************
\r
9841 *SRC=1N4007G;DI_1N4007G;Diodes;Si; 1.00kV 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier
\r
9842 .MODEL DI_1N4007G D ( IS=65.4p RS=42.2m BV=1.00k IBV=5.00u
\r
9843 + CJO=14.8p M=0.333 N=1.36 TT=2.88u )
\r
9844 **************************************************************************************************************************************
\r
9846 ***************************************************************************************************************************************
\r
9847 *SRC=1N4007GL;DI_1N4007GL;Diodes;Si; 1.00kV 1.00A 2.00us Diodes Inc. Glass Passivated Rectifier
\r
9848 .MODEL DI_1N4007GL D ( IS=65.4p RS=42.2m BV=1.00k IBV=5.00u
\r
9849 + CJO=14.8p M=0.333 N=1.36 TT=2.88u )
\r
9850 **************************************************************************************************************************************
\r
9852 *SRC=1N5400;DI_1N5400;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. Standard Rectifier
\r
9853 .MODEL DI_1N5400 D ( IS=63.0n RS=14.1m BV=50.0 IBV=10.0u
\r
9854 + CJO=125p M=0.333 N=1.70 TT=4.32u )
\r
9856 *SRC=1N5401;DI_1N5401;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. Standard Rectifier
\r
9857 .MODEL DI_1N5401 D ( IS=63.0n RS=14.1m BV=100 IBV=10.0u
\r
9858 + CJO=125p M=0.333 N=1.70 TT=4.32u )
\r
9860 *SRC=1N5402;DI_1N5402;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. Standard Rectifier
\r
9861 .MODEL DI_1N5402 D ( IS=63.0n RS=14.1m BV=200 IBV=10.0u
\r
9862 + CJO=125p M=0.333 N=1.70 TT=4.32u )
\r
9864 *SRC=1N5404;DI_1N5404;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. Standard Rectifier
\r
9865 .MODEL DI_1N5404 D ( IS=63.0n RS=14.1m BV=400 IBV=10.0u
\r
9866 + CJO=125p M=0.333 N=1.70 TT=4.32u )
\r
9868 *SRC=1N5406;DI_1N5406;Diodes;Si; 600V 3.00A 3.00us Diodes Inc. Standard Rectifier
\r
9869 .MODEL DI_1N5406 D ( IS=63.0n RS=14.1m BV=600 IBV=10.0u
\r
9870 + CJO=53.0p M=0.333 N=1.70 TT=4.32u )
\r
9872 *SRC=1N5407;DI_1N5407;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. Standard Rectifier
\r
9873 .MODEL DI_1N5407 D ( IS=63.0n RS=14.1m BV=800 IBV=10.0u
\r
9874 + CJO=53.0p M=0.333 N=1.70 TT=4.32u )
\r
9876 *SRC=1N5408;DI_1N5408;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. Standard Rectifier
\r
9877 .MODEL DI_1N5408 D ( IS=63.0n RS=14.1m BV=1.00k IBV=10.0u
\r
9878 + CJO=53.0p M=0.333 N=1.70 TT=4.32u )
\r
9880 *SRC=6A05;DI_6A05;Diodes;Si; 50.0V 6.00A 2.00us Diodes Inc.
\r
9881 .MODEL DI_6A05 D ( IS=52.4n RS=7.00m BV=50.0 IBV=10.0u
\r
9882 + CJO=60.0p M=0.333 N=1.70 TT=2.88u )
\r
9884 *SRC=6A1;DI_6A1;Diodes;Si; 100V 6.00A 2.00us Diodes Inc.
\r
9885 .MODEL DI_6A1 D ( IS=52.4n RS=7.00m BV=100 IBV=10.0u
\r
9886 + CJO=60.0p M=0.333 N=1.70 TT=2.88u )
\r
9888 *SRC=6A10;DI_6A10;Diodes;Si; 1.00kV 6.00A 2.00us Diodes Inc.
\r
9889 .MODEL DI_6A10 D ( IS=52.4n RS=7.00m BV=1.00k IBV=10.0u
\r
9890 + CJO=60.0p M=0.333 N=1.70 TT=2.88u )
\r
9892 *SRC=6A2;DI_6A2;Diodes;Si; 200V 6.00A 2.00us Diodes Inc.
\r
9893 .MODEL DI_6A2 D ( IS=52.4n RS=7.00m BV=200 IBV=10.0u
\r
9894 + CJO=60.0p M=0.333 N=1.70 TT=2.88u )
\r
9896 *SRC=6A4;DI_6A4;Diodes;Si; 400V 6.00A 2.00us Diodes Inc.
\r
9897 .MODEL DI_6A4 D ( IS=52.4n RS=7.00m BV=400 IBV=10.0u
\r
9898 + CJO=60.0p M=0.333 N=1.70 TT=2.88u )
\r
9900 *SRC=6A6;DI_6A6;Diodes;Si; 600V 6.00A 2.00us Diodes Inc.
\r
9901 .MODEL DI_6A6 D ( IS=52.4n RS=7.00m BV=600 IBV=10.0u
\r
9902 + CJO=60.0p M=0.333 N=1.70 TT=2.88u )
\r
9904 *SRC=6A8;DI_6A8;Diodes;Si; 800V 6.00A 2.00us Diodes Inc.
\r
9905 .MODEL DI_6A8 D ( IS=52.4n RS=7.00m BV=800 IBV=10.0u
\r
9906 + CJO=60.0p M=0.333 N=1.70 TT=2.88u )
\r
9908 *SRC=S1A;DI_S1A;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Rectifier
\r
9909 .MODEL DI_S1A D ( IS=7.31e-018 RS=42.0m BV=50.0 IBV=5.00u
\r
9910 + CJO=42.4p M=0.333 N=0.775 TT=4.32u )
\r
9912 *SRC=S1AB;DI_S1AB;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Rectifier
\r
9913 .MODEL DI_S1AB D ( IS=7.31e-018 RS=42.0m BV=50.0 IBV=5.00u
\r
9914 + CJO=42.4p M=0.333 N=0.775 TT=4.32u )
\r
9916 *SRC=S1B;DI_S1B;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Rectifier
\r
9917 .MODEL DI_S1B D ( IS=7.31e-018 RS=42.0m BV=100 IBV=5.00u
\r
9918 + CJO=42.4p M=0.333 N=0.775 TT=4.32u )
\r
9920 *SRC=S1BB;DI_S1BB;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Rectifier
\r
9921 .MODEL DI_S1BB D ( IS=7.31e-018 RS=42.0m BV=100 IBV=5.00u
\r
9922 + CJO=42.4p M=0.333 N=0.775 TT=4.32u )
\r
9924 *SRC=S1D;DI_S1D;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Rectifier
\r
9925 .MODEL DI_S1D D ( IS=7.31e-018 RS=42.0m BV=200 IBV=5.00u
\r
9926 + CJO=42.4p M=0.333 N=0.775 TT=4.32u )
\r
9928 *SRC=S1DB;DI_S1DB;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Rectifier
\r
9929 .MODEL DI_S1DB D ( IS=7.31e-018 RS=42.0m BV=200 IBV=5.00u
\r
9930 + CJO=42.4p M=0.333 N=0.775 TT=4.32u )
\r
9932 *SRC=S1G;DI_S1G;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Rectifier
\r
9933 .MODEL DI_S1G D ( IS=7.31e-018 RS=42.0m BV=400 IBV=5.00u
\r
9934 + CJO=42.4p M=0.333 N=0.775 TT=4.32u )
\r
9936 *SRC=S1GB;DI_S1GB;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Rectifier
\r
9937 .MODEL DI_S1GB D ( IS=7.31e-018 RS=42.0m BV=400 IBV=5.00u
\r
9938 + CJO=42.4p M=0.333 N=0.775 TT=4.32u )
\r
9940 *SRC=S1J;DI_S1J;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Rectifier
\r
9941 .MODEL DI_S1J D ( IS=7.31e-018 RS=42.0m BV=600 IBV=5.00u
\r
9942 + CJO=42.4p M=0.333 N=0.775 TT=4.32u )
\r
9944 *SRC=S1JB;DI_S1JB;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Rectifier
\r
9945 .MODEL DI_S1JB D ( IS=7.31e-018 RS=42.0m BV=600 IBV=5.00u
\r
9946 + CJO=42.4p M=0.333 N=0.775 TT=4.32u )
\r
9948 *SRC=S1K;DI_S1K;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Rectifier
\r
9949 .MODEL DI_S1K D ( IS=7.31e-018 RS=42.0m BV=800 IBV=5.00u
\r
9950 + CJO=42.4p M=0.333 N=0.775 TT=4.32u )
\r
9952 *SRC=S1KB;DI_S1KB;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Rectifier
\r
9953 .MODEL DI_S1KB D ( IS=7.31e-018 RS=42.0m BV=800 IBV=5.00u
\r
9954 + CJO=42.4p M=0.333 N=0.775 TT=4.32u )
\r
9956 *SRC=S1M;DI_S1M;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Rectifier
\r
9957 .MODEL DI_S1M D ( IS=7.31e-018 RS=42.0m BV=1.00k IBV=5.00u
\r
9958 + CJO=42.4p M=0.333 N=0.775 TT=4.32u )
\r
9960 *SRC=S1MB;DI_S1MB;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Rectifier
\r
9961 .MODEL DI_S1MB D ( IS=7.31e-018 RS=42.0m BV=1.00k IBV=5.00u
\r
9962 + CJO=42.4p M=0.333 N=0.775 TT=4.32u )
\r
9964 *SRC=S2A;DI_S2A;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc.
\r
9965 .MODEL DI_S2A D ( IS=1.30u RS=8.92m BV=50.0 IBV=5.00u
\r
9966 + CJO=37.0p M=0.333 N=2.58 TT=4.32u )
\r
9968 *SRC=S2AA;DI_S2AA;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc.
\r
9969 .MODEL DI_S2AA D ( IS=1.30u RS=8.92m BV=50.0 IBV=5.00u
\r
9970 + CJO=37.0p M=0.333 N=2.58 TT=4.32u )
\r
9972 *SRC=S2B;DI_S2B;Diodes;Si; 100V 1.50A 3.00us Diodes Inc.
\r
9973 .MODEL DI_S2B D ( IS=1.30u RS=8.92m BV=100 IBV=5.00u
\r
9974 + CJO=37.0p M=0.333 N=2.58 TT=4.32u )
\r
9976 *SRC=S2BA;DI_S2BA;Diodes;Si; 100V 1.50A 3.00us Diodes Inc.
\r
9977 .MODEL DI_S2BA D ( IS=1.30u RS=8.92m BV=100 IBV=5.00u
\r
9978 + CJO=37.0p M=0.333 N=2.58 TT=4.32u )
\r
9980 *SRC=S2D;DI_S2D;Diodes;Si; 200V 1.50A 3.00us Diodes Inc.
\r
9981 .MODEL DI_S2D D ( IS=1.30u RS=8.92m BV=200 IBV=5.00u
\r
9982 + CJO=37.0p M=0.333 N=2.58 TT=4.32u )
\r
9984 *SRC=S2DA;DI_S2DA;Diodes;Si; 200V 1.50A 3.00us Diodes Inc.
\r
9985 .MODEL DI_S2DA D ( IS=1.30u RS=8.92m BV=200 IBV=5.00u
\r
9986 + CJO=37.0p M=0.333 N=2.58 TT=4.32u )
\r
9988 *SRC=S2G;DI_S2G;Diodes;Si; 400V 1.50A 3.00us Diodes Inc.
\r
9989 .MODEL DI_S2G D ( IS=1.30u RS=8.92m BV=400 IBV=5.00u
\r
9990 + CJO=37.0p M=0.333 N=2.58 TT=4.32u )
\r
9992 *SRC=S2GA;DI_S2GA;Diodes;Si; 400V 1.50A 3.00us Diodes Inc.
\r
9993 .MODEL DI_S2GA D ( IS=1.30u RS=8.92m BV=400 IBV=5.00u
\r
9994 + CJO=37.0p M=0.333 N=2.58 TT=4.32u )
\r
9996 *SRC=S2J;DI_S2J;Diodes;Si; 600V 1.50A 3.00us Diodes Inc.
\r
9997 .MODEL DI_S2J D ( IS=1.30u RS=8.92m BV=600 IBV=5.00u
\r
9998 + CJO=37.0p M=0.333 N=2.58 TT=4.32u )
\r
10000 *SRC=S2JA;DI_S2JA;Diodes;Si; 600V 1.50A 3.00us Diodes Inc.
\r
10001 .MODEL DI_S2JA D ( IS=1.30u RS=8.92m BV=600 IBV=5.00u
\r
10002 + CJO=37.0p M=0.333 N=2.58 TT=4.32u )
\r
10004 *SRC=S2K;DI_S2K;Diodes;Si; 800V 1.50A 3.00us Diodes Inc.
\r
10005 .MODEL DI_S2K D ( IS=1.30u RS=8.92m BV=800 IBV=5.00u
\r
10006 + CJO=37.0p M=0.333 N=2.58 TT=4.32u )
\r
10008 *SRC=S2KA;DI_S2KA;Diodes;Si; 800V 1.50A 3.00us Diodes Inc.
\r
10009 .MODEL DI_S2KA D ( IS=1.30u RS=8.92m BV=800 IBV=5.00u
\r
10010 + CJO=37.0p M=0.333 N=2.58 TT=4.32u )
\r
10012 *SRC=S2M;DI_S2M;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc.
\r
10013 .MODEL DI_S2M D ( IS=1.30u RS=8.92m BV=1.00k IBV=5.00u
\r
10014 + CJO=37.0p M=0.333 N=2.58 TT=4.32u )
\r
10016 *SRC=S2MA;DI_S2MA;Diodes;Si; 1.00kV 1.50A 3.00us Diodes Inc.
\r
10017 .MODEL DI_S2MA D ( IS=1.30u RS=8.92m BV=1.00k IBV=5.00u
\r
10018 + CJO=37.0p M=0.333 N=2.58 TT=4.32u )
\r
10020 *SRC=S3A;DI_S3A;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. -
\r
10021 .MODEL DI_S3A D ( IS=1.37n RS=14.0m BV=50.0 IBV=10.0u
\r
10022 + CJO=74.0p M=0.333 N=1.70 TT=4.32u )
\r
10024 *SRC=S3A;DI_S3A;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. -
\r
10025 .MODEL DI_S3A D ( IS=1.37n RS=14.0m BV=50.0 IBV=10.0u
\r
10026 + CJO=74.0p M=0.333 N=1.70 TT=4.32u )
\r
10028 *SRC=S3BB;S3BB;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. -
\r
10029 .MODEL S3BB D ( IS=1.37n RS=14.0m BV=100 IBV=10.0u
\r
10030 + CJO=74.0p M=0.333 N=1.70 TT=4.32u )
\r
10032 *SRC=S3BB;S3BB;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. -
\r
10033 .MODEL S3BB D ( IS=1.37n RS=14.0m BV=100 IBV=10.0u
\r
10034 + CJO=74.0p M=0.333 N=1.70 TT=4.32u )
\r
10036 *SRC=S3D;DI_S3D;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. -
\r
10037 .MODEL DI_S3D D ( IS=1.37n RS=14.0m BV=200 IBV=10.0u
\r
10038 + CJO=74.0p M=0.333 N=1.70 TT=4.32u )
\r
10040 *SRC=S3DB;DI_S3DB;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. -
\r
10041 .MODEL DI_S3DB D ( IS=1.37n RS=14.0m BV=200 IBV=10.0u
\r
10042 + CJO=74.0p M=0.333 N=1.70 TT=4.32u )
\r
10044 *SRC=S3GB;DI_S3GB;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. -
\r
10045 .MODEL DI_S3GB D ( IS=1.37n RS=14.0m BV=400 IBV=10.0u
\r
10046 + CJO=74.0p M=0.333 N=1.70 TT=4.32u )
\r
10048 *SRC=S3GB;DI_S3GB;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. -
\r
10049 .MODEL DI_S3GB D ( IS=1.37n RS=14.0m BV=400 IBV=10.0u
\r
10050 + CJO=74.0p M=0.333 N=1.70 TT=4.32u )
\r
10052 *SRC=S3K;DI_S3K;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. -
\r
10053 .MODEL DI_S3K D ( IS=1.37n RS=14.0m BV=800 IBV=10.0u
\r
10054 + CJO=74.0p M=0.333 N=1.70 TT=4.32u )
\r
10056 *SRC=S3K;DI_S3K;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. -
\r
10057 .MODEL DI_S3K D ( IS=1.37n RS=14.0m BV=800 IBV=10.0u
\r
10058 + CJO=74.0p M=0.333 N=1.70 TT=4.32u )
\r
10060 *SRC=S3M;DI_S3M;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. -
\r
10061 .MODEL DI_S3M D ( IS=1.37n RS=14.0m BV=1.00k IBV=10.0u
\r
10062 + CJO=74.0p M=0.333 N=1.70 TT=4.32u )
\r
10064 *SRC=S3M;DI_S3M;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. -
\r
10065 .MODEL DI_S3M D ( IS=1.37n RS=14.0m BV=1.00k IBV=10.0u
\r
10066 + CJO=74.0p M=0.333 N=1.70 TT=4.32u )
\r
10068 *SRC=S5AC;DI_S5AC;Diodes;Si; 50.0V 5.00A 2.00us Diodes Inc. -
\r
10069 .MODEL DI_S5AC D ( IS=2.28n RS=8.40m BV=50.0 IBV=10.0u
\r
10070 + CJO=74.0p M=0.333 N=1.70 TT=2.88u )
\r
10072 *SRC=S5BC;DI_S5BC;Diodes;Si; 100V 5.00A 2.00us Diodes Inc. -
\r
10073 .MODEL DI_S5BC D ( IS=2.28n RS=8.40m BV=100 IBV=10.0u
\r
10074 + CJO=74.0p M=0.333 N=1.70 TT=2.88u )
\r
10076 *SRC=S5DC;DI_S5DC;Diodes;Si; 200V 5.00A 2.00us Diodes Inc. -
\r
10077 .MODEL DI_S5DC D ( IS=2.28n RS=8.40m BV=200 IBV=10.0u
\r
10078 + CJO=74.0p M=0.333 N=1.70 TT=2.88u )
\r
10080 *SRC=S5GC;DI_S5GC;Diodes;Si; 400V 5.00A 2.00us Diodes Inc.
\r
10081 .MODEL DI_S5GC D ( IS=2.28n RS=8.40m BV=400 IBV=10.0u
\r
10082 + CJO=74.0p M=0.333 N=1.70 TT=2.88u )
\r
10084 *SRC=S5JC;DI_S5JC;Diodes;Si; 600V 5.00A 2.00us Diodes Inc. -
\r
10085 .MODEL DI_S5JC D ( IS=2.28n RS=8.40m BV=600 IBV=10.0u
\r
10086 + CJO=74.0p M=0.333 N=1.70 TT=2.88u )
\r
10088 *SRC=S5KC;DI_S5KC;Diodes;Si; 800V 5.00A 2.00us Diodes Inc. -
\r
10089 .MODEL DI_S5KC D ( IS=2.28n RS=8.40m BV=800 IBV=10.0u
\r
10090 + CJO=74.0p M=0.333 N=1.70 TT=2.88u )
\r
10092 *SRC=S5MC;DI_S5MC;Diodes;Si; 1.00kV 5.00A 2.00us Diodes Inc. -
\r
10093 .MODEL DI_S5MC D ( IS=2.28n RS=8.40m BV=1.00k IBV=10.0u
\r
10094 + CJO=74.0p M=0.333 N=1.70 TT=2.88u )
\r
10096 *SRC=1N4933;DI_1N4933;Diodes;Si; 50.0V 1.00A 200ns Diodes Inc. Fast
\r
10098 .MODEL DI_1N4933 D ( IS=830n RS=34.0m BV=50.0 IBV=5.00u
\r
10099 + CJO=26.5p M=0.333 N=2.46 TT=288n )
\r
10101 *SRC=1N4934;DI_1N4934;Diodes;Si; 100V 1.00A 200ns Diodes Inc. Fast
\r
10103 .MODEL DI_1N4934 D ( IS=830n RS=34.0m BV=100 IBV=5.00u
\r
10104 + CJO=26.5p M=0.333 N=2.46 TT=288n )
\r
10106 *SRC=1N4935;DI_1N4935;Diodes;Si; 200V 1.00A 200ns Diodes Inc. Fast
\r
10108 .MODEL DI_1N4935 D ( IS=830n RS=34.0m BV=200 IBV=5.00u
\r
10109 + CJO=26.5p M=0.333 N=2.46 TT=288n )
\r
10111 *SRC=1N4936;DI_1N4936;Diodes;Si; 400V 1.00A 200ns Diodes Inc. Fast
\r
10113 .MODEL DI_1N4936 D ( IS=830n RS=34.0m BV=400 IBV=5.00u
\r
10114 + CJO=26.5p M=0.333 N=2.46 TT=288n )
\r
10116 *SRC=1N4937;DI_1N4937;Diodes;Si; 600V 1.00A 200ns Diodes Inc. Fast
\r
10118 .MODEL DI_1N4937 D ( IS=830n RS=34.0m BV=600 IBV=5.00u
\r
10119 + CJO=26.5p M=0.333 N=2.46 TT=288n )
\r
10121 *SRC=DL4933;DI_DL4933;Diodes;Si; 50.0V 1.00A 200ns Diodes Inc. Fast Recovery Rectifier
\r
10122 .MODEL DI_DL4933 D ( IS=4.25n RS=25.0m BV=50.0 IBV=100u
\r
10123 + CJO=26.5p M=0.333 N=1.70 TT=288n )
\r
10125 *SRC=DL4934;DI_DL4934;Diodes;Si; 100V 1.00A 200ns Diodes Inc. Fast Recovery Rectifier
\r
10126 .MODEL DI_DL4934 D ( IS=4.25n RS=25.0m BV=100 IBV=100u
\r
10127 + CJO=26.5p M=0.333 N=1.70 TT=288n )
\r
10129 *SRC=DL4935;DI_DL4935;Diodes;Si; 200V 1.00A 200ns Diodes Inc. Fast Recovery Rectifier
\r
10130 .MODEL DI_DL4935 D ( IS=4.25n RS=25.0m BV=200 IBV=100u
\r
10131 + CJO=26.5p M=0.333 N=1.70 TT=288n )
\r
10133 *SRC=DL4936;DI_DL4936;Diodes;Si; 400V 1.00A 200ns Diodes Inc. Fast Recovery Rectifier
\r
10134 .MODEL DI_DL4936 D ( IS=4.25n RS=25.0m BV=400 IBV=100u
\r
10135 + CJO=26.5p M=0.333 N=1.70 TT=288n )
\r
10137 *SRC=DL4937;DI_DL4937;Diodes;Si; 600V 1.00A 200ns Diodes Inc. Fast Recovery Rectifier
\r
10138 .MODEL DI_DL4937 D ( IS=4.25n RS=25.0m BV=600 IBV=100u
\r
10139 + CJO=26.5p M=0.333 N=1.70 TT=288n )
\r
10141 *SRC=ES1A;DI_ES1A;Diodes;Si; 50.0V 1.00A 20.0ns Diodes Inc.
\r
10142 .MODEL DI_ES1A D ( IS=123n RS=42.0m BV=50.0 IBV=5.00u
\r
10143 + CJO=18.5p M=0.333 N=2.12 TT=28.8n )
\r
10145 *SRC=ES1B;DI_ES1B;Diodes;Si; 100V 1.00A 20.0ns Diodes Inc.
\r
10146 .MODEL DI_ES1B D ( IS=123n RS=42.0m BV=100 IBV=5.00u
\r
10147 + CJO=18.5p M=0.333 N=2.12 TT=28.8n )
\r
10149 *SRC=ES1C;DI_ES1C;Diodes;Si; 150V 1.00A 20.0ns Diodes Inc.
\r
10150 .MODEL DI_ES1C D ( IS=123n RS=42.0m BV=150 IBV=5.00u
\r
10151 + CJO=18.5p M=0.333 N=2.12 TT=28.8n )
\r
10153 *SRC=ES1D;DI_ES1D;Diodes;Si; 200V 1.00A 20.0ns Diodes Inc.
\r
10154 .MODEL DI_ES1D D ( IS=123n RS=42.0m BV=200 IBV=5.00u
\r
10155 + CJO=18.5p M=0.333 N=2.12 TT=28.8n )
\r
10157 *SRC=ES1G;DI_ES1G;Diodes;Si; 400V 1.00A 20.0ns Diodes Inc.
\r
10158 .MODEL DI_ES1G D ( IS=373n RS=64.3m BV=400 IBV=5.00u
\r
10159 + CJO=18.5p M=0.333 N=2.84 TT=28.8n )
\r
10161 *SRC=ES2A;DI_ES2A;Diodes;Si; 50.0V 2.00A 25.0ns Diodes Inc. Fast
\r
10163 .MODEL DI_ES2A D ( IS=267n RS=21.0m BV=50.0 IBV=5.00u
\r
10164 + CJO=83.5p M=0.333 N=1.70 TT=36.0n )
\r
10166 *****************************************************************************************
\r
10167 *SRC=ES2AA;DI_ES2AA;Diodes;Si; 50.0V 2.00A 25.0ns Diodes Inc. Fast
\r
10169 .MODEL DI_ES2AA D ( IS=267n RS=21.0m BV=50.0 IBV=5.00u
\r
10170 + CJO=83.5p M=0.333 N=1.70 TT=36.0n )
\r
10171 ****************************************************************************************
\r
10173 *SRC=ES2B;DI_ES2B;Diodes;Si; 100V 2.00A 25.0ns Diodes Inc. Fast
\r
10175 .MODEL DI_ES2B D ( IS=267n RS=21.0m BV=100 IBV=5.00u
\r
10176 + CJO=83.5p M=0.333 N=1.70 TT=36.0n )
\r
10178 ****************************************************************************************
\r
10179 SRC=ES2BA;DI_ES2BA;Diodes;Si; 100V 2.00A 25.0ns Diodes Inc. Fast
\r
10181 .MODEL DI_ES2BA D ( IS=267n RS=21.0m BV=100 IBV=5.00u
\r
10182 + CJO=83.5p M=0.333 N=1.70 TT=36.0n )
\r
10183 ***************************************************************************************
\r
10185 *SRC=ES2C;DI_ES2C;Diodes;Si; 150V 2.00A 25.0ns Diodes Inc. Fast
\r
10187 .MODEL DI_ES2C D ( IS=267n RS=21.0m BV=150 IBV=5.00u
\r
10188 + CJO=83.5p M=0.333 N=1.70 TT=36.0n )
\r
10190 ***************************************************************************************
\r
10191 *SRC=ES2CA;DI_ES2CA;Diodes;Si; 150V 2.00A 25.0ns Diodes Inc. Fast
\r
10193 .MODEL DI_ES2CA D ( IS=267n RS=21.0m BV=150 IBV=5.00u
\r
10194 + CJO=83.5p M=0.333 N=1.70 TT=36.0n )
\r
10195 *****************************************************************************************
\r
10197 *SRC=ES2D;DI_ES2D;Diodes;Si; 200V 2.00A 25.0ns Diodes Inc. Fast
\r
10199 .MODEL DI_ES2D D ( IS=267n RS=21.0m BV=200 IBV=5.00u
\r
10200 + CJO=83.5p M=0.333 N=1.70 TT=36.0n )
\r
10202 *****************************************************************************************
\r
10203 *SRC=ES2DA;DI_ES2DA;Diodes;Si; 200V 2.00A 25.0ns Diodes Inc. Fast
\r
10205 .MODEL DI_ES2DA D ( IS=267n RS=21.0m BV=200 IBV=5.00u
\r
10206 + CJO=83.5p M=0.333 N=1.70 TT=36.0n )
\r
10207 *****************************************************************************************
\r
10209 *SRC=ES2G;DI_ES2G;Diodes;Si; 400V 2.00A 25.0ns Diodes Inc. Fast
\r
10211 .MODEL DI_ES2G D ( IS=3.92n RS=21.0m BV=400 IBV=5.00u
\r
10212 + CJO=83.5p M=0.333 N=1.95 TT=36.0n )
\r
10214 *SRC=ES3A;DI_ES3A;Diodes;Si; 50.0V 3.00A 25.0ns Diodes Inc.
\r
10215 .MODEL DI_ES3A D ( IS=7.27p RS=22.4m BV=50.0 IBV=10.0u
\r
10216 + CJO=83.2p M=0.333 N=0.700 TT=36.0n )
\r
10218 *SRC=ES3AB;DI_ES3AB;Diodes;Si; 50.0V 3.00A 25.0ns Diodes Inc.
\r
10219 .MODEL DI_ES3AB D ( IS=7.27p RS=22.4m BV=50.0 IBV=10.0u
\r
10220 + CJO=83.2p M=0.333 N=0.700 TT=36.0n )
\r
10222 *SRC=ES3B;DI_ES3B;Diodes;Si; 100V 3.00A 25.0ns Diodes Inc.
\r
10223 .MODEL DI_ES3B D ( IS=7.27p RS=22.4m BV=100 IBV=10.0u
\r
10224 + CJO=83.2p M=0.333 N=0.700 TT=36.0n )
\r
10226 *SRC=ES3BB;DI_ES3BB;Diodes;Si; 100V 3.00A 25.0ns Diodes Inc.
\r
10227 .MODEL DI_ES3BB D ( IS=7.27p RS=22.4m BV=100 IBV=10.0u
\r
10228 + CJO=83.2p M=0.333 N=0.700 TT=36.0n )
\r
10230 *SRC=ES3C;DI_ES3C;Diodes;Si; 150V 3.00A 25.0ns Diodes Inc.
\r
10231 .MODEL DI_ES3C D ( IS=7.27p RS=22.4m BV=150 IBV=10.0u
\r
10232 + CJO=83.2p M=0.333 N=0.700 TT=36.0n )
\r
10234 *SRC=ES3CB;DI_ES3CB;Diodes;Si; 150V 3.00A 25.0ns Diodes Inc.
\r
10235 .MODEL DI_ES3CB D ( IS=7.27p RS=22.4m BV=150 IBV=10.0u
\r
10236 + CJO=83.2p M=0.333 N=0.700 TT=36.0n )
\r
10238 *SRC=ES3D;DI_ES3D;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc.
\r
10239 .MODEL DI_ES3D D ( IS=7.27p RS=22.4m BV=200 IBV=10.0u
\r
10240 + CJO=83.2p M=0.333 N=0.700 TT=36.0n )
\r
10242 *SRC=ES3DB;DI_ES3DB;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc.
\r
10243 .MODEL DI_ES3DB D ( IS=7.27p RS=22.4m BV=200 IBV=10.0u
\r
10244 + CJO=83.2p M=0.333 N=0.700 TT=36.0n )
\r
10246 *SRC=MURB1610CT;DI_MURB1610CT;Diodes;Si; 100V 16.0A 25.0ns Diodes Inc.
\r
10247 Fast Rectifier -- for one element
\r
10248 .MODEL DI_MURB1610CT D ( IS=3.19n RS=3.67m BV=100 IBV=5.00u
\r
10249 + CJO=225p M=0.333 N=1.59 TT=36.0n )
\r
10251 *SRC=MURB1620CT;DI_MURB1620CT;Diodes;Si; 200V 16.0A 25.0ns Diodes Inc.
\r
10252 Fast Rectifier -- for one element
\r
10253 .MODEL DI_MURB1620CT D ( IS=3.19n RS=3.67m BV=200 IBV=5.00u
\r
10254 + CJO=225p M=0.333 N=1.59 TT=36.0n )
\r
10256 *SRC=MURS120;DI_MURS120;Diodes;Si; 200V 1.00A 25.0ns Diodes Inc. Super Fast Rectifier
\r
10257 .MODEL DI_MURS120 D ( IS=17.1n RS=20.6m BV=200 IBV=2.00u
\r
10258 + CJO=60.0p M=0.333 N=1.73 TT=36.0n )
\r
10259 ************************************************************************************************************************************
\r
10261 *SRC=MURS140;DI_MURS140;Diodes;Si; 400V 1.00A 50.0ns Diodes Inc. Super Fast Rectifier
\r
10262 .MODEL DI_MURS140 D ( IS=17.1n RS=20.6m BV=400 IBV=2.00u
\r
10263 + CJO=45.0p M=0.333 N=1.73 TT=72.0n )
\r
10264 ***********************************************************************************************************************************
\r
10266 *SRC=MURS160;DI_MURS160;Diodes;Si; 600V 1.00A 50.0ns Diodes Inc. Super Fast Rectifier
\r
10267 .MODEL DI_MURS160 D ( IS=17.1n RS=20.6m BV=600 IBV=2.00u
\r
10268 + CJO=45.0p M=0.333 N=1.73 TT=72.0n )
\r
10269 ***********************************************************************************************************************************
\r
10271 *SRC=MURS320;DI_MURS320;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. Super Fast Rectifier
\r
10272 .MODEL DI_MURS320 D ( IS=11.8n RS=7.89m BV=200 IBV=5.00u
\r
10273 + CJO=45.0p M=0.333 N=1.56 TT=36.0n )
\r
10274 ***********************************************************************************************************************************
\r
10276 *SRC=PR1001G;DI_PR1001G;Diodes;Si; 50.0V 1.00A 150ns Diodes Inc. Fast
\r
10278 .MODEL DI_PR1001G D ( IS=5.00n RS=29.8m BV=50.0 IBV=5.00u
\r
10279 + CJO=27.8p M=0.333 N=1.72 TT=216n )
\r
10281 *SRC=PR1002G;DI_PR1002G;Diodes;Si; 100V 1.00A 150ns Diodes Inc. Fast
\r
10283 .MODEL DI_PR1002G D ( IS=5.00n RS=29.8m BV=100 IBV=5.00u
\r
10284 + CJO=27.8p M=0.333 N=1.72 TT=216n )
\r
10286 *SRC=PR1003G;DI_PR1003G;Diodes;Si; 200V 1.00A 150ns Diodes Inc. Fast
\r
10288 .MODEL DI_PR1003G D ( IS=5.00n RS=29.8m BV=200 IBV=5.00u
\r
10289 + CJO=27.8p M=0.333 N=1.72 TT=216n )
\r
10291 *SRC=PR1004G;DI_PR1004G;Diodes;Si; 400V 1.00A 150ns Diodes Inc. Fast
\r
10293 .MODEL DI_PR1004G D ( IS=5.00n RS=29.8m BV=400 IBV=5.00u
\r
10294 + CJO=27.8p M=0.333 N=1.72 TT=216n )
\r
10296 *SRC=PR1005G;DI_PR1005G;Diodes;Si; 600V 1.00A 250ns Diodes Inc. Fast
\r
10298 .MODEL DI_PR1005G D ( IS=5.00n RS=29.8m BV=600 IBV=5.00u
\r
10299 + CJO=19.9p M=0.333 N=1.72 TT=360n )
\r
10301 *SRC=PR1006G;DI_PR1006G;Diodes;Si; 800V 1.00A 500ns Diodes Inc. Fast
\r
10303 .MODEL DI_PR1006G D ( IS=5.00n RS=29.8m BV=800 IBV=5.00u
\r
10304 + CJO=19.9p M=0.333 N=1.72 TT=720n )
\r
10306 *SRC=PR1007G;DI_PR1007G;Diodes;Si; 1.00kV 1.00A 500ns Diodes Inc. Fast
\r
10308 .MODEL DI_PR1007G D ( IS=5.00n RS=29.8m BV=1.00k IBV=5.00u
\r
10309 + CJO=19.9p M=0.333 N=1.72 TT=720n )
\r
10311 *SRC=PR6001;DI_PR6001;Diodes;Si; 50.0V 6.00A 150ns Diodes Inc. Fast Rectifier
\r
10312 .MODEL DI_PR6001 D ( IS=863n RS=12.6m BV=50.0 IBV=10.0u
\r
10313 + CJO=663p M=0.333 N=1.70 TT=216n )
\r
10315 *SRC=RS1A;DI_RS1A;Diodes;Si; 50.0V 1.00A 150ns Diodes Inc. Fast Rectifier
\r
10316 .MODEL DI_RS1A D ( IS=948n RS=81.3m BV=50.0 IBV=5.00u
\r
10317 + CJO=27.7p M=0.333 N=2.48 TT=216n )
\r
10318 *************************************************************************************************************************************
\r
10320 *SRC=RS1AB;DI_RS1AB;Diodes;Si; 50.0V 1.00A 150ns Diodes Inc. Fast Rectifier
\r
10321 .MODEL DI_RS1AB D ( IS=948n RS=81.3m BV=50.0 IBV=5.00u
\r
10322 + CJO=27.7p M=0.333 N=2.48 TT=216n )
\r
10323 *************************************************************************************************************************************
\r
10325 *SRC=RS1B;DI_RS1B;Diodes;Si; 100V 1.00A 150ns Diodes Inc. Fast Rectifier
\r
10326 .MODEL DI_RS1B D ( IS=948n RS=81.3m BV=100 IBV=5.00u
\r
10327 + CJO=27.7p M=0.333 N=2.48 TT=216n )
\r
10328 **************************************************************************************************************************************
\r
10330 *SRC=RS1BB;DI_RS1BB;Diodes;Si; 100V 1.00A 150ns Diodes Inc. Fast Rectifier
\r
10331 .MODEL DI_RS1BB D ( IS=948n RS=81.3m BV=100 IBV=5.00u
\r
10332 + CJO=27.7p M=0.333 N=2.48 TT=216n )
\r
10333 **************************************************************************************************************************************
\r
10335 *SRC=RS1D;DI_RS1D;Diodes;Si; 200V 1.00A 150ns Diodes Inc. Fast Rectifier
\r
10336 .MODEL DI_RS1D D ( IS=948n RS=81.3m BV=200 IBV=5.00u
\r
10337 + CJO=27.7p M=0.333 N=2.48 TT=216n )
\r
10338 **************************************************************************************************************************************
\r
10340 *SRC=RS1DB;DI_RS1DB;Diodes;Si; 200V 1.00A 150ns Diodes Inc. Fast Rectifier
\r
10341 .MODEL DI_RS1DB D ( IS=948n RS=81.3m BV=200 IBV=5.00u
\r
10342 + CJO=27.7p M=0.333 N=2.48 TT=216n )
\r
10343 **************************************************************************************************************************************
\r
10345 *SRC=RS1G;DI_RS1G;Diodes;Si; 400V 1.00A 150ns Diodes Inc. Fast Rectifier
\r
10346 .MODEL DI_RS1G D ( IS=948n RS=81.3m BV=400 IBV=5.00u
\r
10347 + CJO=27.7p M=0.333 N=2.48 TT=216n )
\r
10348 **************************************************************************************************************************************
\r
10350 *SRC=RS1GB;DI_RS1GB;Diodes;Si; 400V 1.00A 150ns Diodes Inc. Fast Rectifier
\r
10351 .MODEL DI_RS1GB D ( IS=948n RS=81.3m BV=400 IBV=5.00u
\r
10352 + CJO=27.7p M=0.333 N=2.48 TT=216n )
\r
10353 **************************************************************************************************************************************
\r
10355 *SRC=RS1J;DI_RS1J;Diodes;Si; 600V 1.00A 250ns Diodes Inc. Fast Rectifier
\r
10356 .MODEL DI_RS1J D ( IS=948n RS=81.3m BV=600 IBV=5.00u
\r
10357 + CJO=27.7p M=0.333 N=2.48 TT=360n )
\r
10358 **************************************************************************************************************************************
\r
10360 *SRC=RS1JB;DI_RS1JB;Diodes;Si; 600V 1.00A 250ns Diodes Inc. Fast Rectifier
\r
10361 .MODEL DI_RS1JB D ( IS=948n RS=81.3m BV=600 IBV=5.00u
\r
10362 + CJO=27.7p M=0.333 N=2.48 TT=360n )
\r
10363 **************************************************************************************************************************************
\r
10365 *SRC=RS1K;DI_RS1K;Diodes;Si; 800V 1.00A 500ns Diodes Inc. Fast Rectifier
\r
10366 .MODEL DI_RS1K D ( IS=948n RS=81.3m BV=800 IBV=5.00u
\r
10367 + CJO=27.7p M=0.333 N=2.48 TT=720n )
\r
10368 **************************************************************************************************************************************
\r
10370 *SRC=RS1KB;DI_RS1KB;Diodes;Si; 800V 1.00A 500ns Diodes Inc. Fast Rectifier
\r
10371 .MODEL DI_RS1KB D ( IS=948n RS=81.3m BV=800 IBV=5.00u
\r
10372 + CJO=27.7p M=0.333 N=2.48 TT=720n )
\r
10373 **************************************************************************************************************************************
\r
10375 *SRC=RS1M;DI_RS1M;Diodes;Si; 1.00kV 1.00A 500ns Diodes Inc. Fast Rectifier
\r
10376 .MODEL DI_RS1M D ( IS=948n RS=81.3m BV=1.00k IBV=5.00u
\r
10377 + CJO=27.7p M=0.333 N=2.48 TT=720n )
\r
10378 **************************************************************************************************************************************
\r
10380 *SRC=RS1MB;DI_RS1MB;Diodes;Si; 1.00kV 1.00A 500ns Diodes Inc. Fast Rectifier
\r
10381 .MODEL DI_RS1MB D ( IS=948n RS=81.3m BV=1.00k IBV=5.00u
\r
10382 + CJO=27.7p M=0.333 N=2.48 TT=720n )
\r
10383 **************************************************************************************************************************************
\r
10385 *SRC=RS2A;DI_RS2A;Diodes;Si; 50.0V 1.50A 150ns Diodes Inc. Fast Rectifier
\r
10386 .MODEL DI_RS2A D ( IS=169u RS=4.81m BV=50.0 IBV=5.00u
\r
10387 + CJO=55.5p M=0.333 N=6.02 TT=216n )
\r
10388 ******************************************************************************************************
\r
10390 *SRC=RS2AA;DI_RS2AA;Diodes;Si; 50.0V 1.50A 150ns Diodes Inc. Fast Rectifier
\r
10391 .MODEL DI_RS2AA D ( IS=169u RS=4.81m BV=50.0 IBV=5.00u
\r
10392 + CJO=55.5p M=0.333 N=6.02 TT=216n )
\r
10393 ******************************************************************************************************
\r
10395 *SRC=RS2B;DI_RS2B;Diodes;Si; 100V 1.50A 150ns Diodes Inc. Fast Rectifier
\r
10396 .MODEL DI_RS2B D ( IS=169u RS=4.81m BV=100 IBV=5.00u
\r
10397 + CJO=55.5p M=0.333 N=6.02 TT=216n )
\r
10398 ******************************************************************************************************
\r
10400 *SRC=RS2BA;DI_RS2BA;Diodes;Si; 100V 1.50A 150ns Diodes Inc. Fast Rectifier
\r
10401 .MODEL DI_RS2BA D ( IS=169u RS=4.81m BV=100 IBV=5.00u
\r
10402 + CJO=55.5p M=0.333 N=6.02 TT=216n )
\r
10403 ******************************************************************************************************
\r
10405 *SRC=RS2D;DI_RS2D;Diodes;Si; 200V 1.50A 150ns Diodes Inc. Fast Rectifier
\r
10406 .MODEL DI_RS2D D ( IS=169u RS=4.81m BV=200 IBV=5.00u
\r
10407 + CJO=55.5p M=0.333 N=6.02 TT=216n )
\r
10408 ******************************************************************************************************
\r
10410 *SRC=RS2DA;DI_RS2DA;Diodes;Si; 200V 1.50A 150ns Diodes Inc. Fast Rectifier
\r
10411 .MODEL DI_RS2DA D ( IS=169u RS=4.81m BV=200 IBV=5.00u
\r
10412 + CJO=55.5p M=0.333 N=6.02 TT=216n )
\r
10413 ******************************************************************************************************
\r
10415 *SRC=RS2G;DI_RS2G;Diodes;Si; 400V 1.50A 150ns Diodes Inc. Fast Rectifier
\r
10416 .MODEL DI_RS2G D ( IS=169u RS=4.81m BV=400 IBV=5.00u
\r
10417 + CJO=55.5p M=0.333 N=6.02 TT=216n )
\r
10418 ******************************************************************************************************
\r
10420 *SRC=RS2GA;DI_RS2GA;Diodes;Si; 400V 1.50A 150ns Diodes Inc. Fast Rectifier
\r
10421 .MODEL DI_RS2GA D ( IS=169u RS=4.81m BV=400 IBV=5.00u
\r
10422 + CJO=55.5p M=0.333 N=6.02 TT=216n )
\r
10423 ******************************************************************************************************
\r
10425 *SRC=RS2J;DI_RS2J;Diodes;Si; 600V 1.50A 250ns Diodes Inc. Fast Rectifier
\r
10426 .MODEL DI_RS2J D ( IS=169u RS=4.81m BV=600 IBV=5.00u
\r
10427 + CJO=55.5p M=0.333 N=6.02 TT=360n )
\r
10428 ******************************************************************************************************
\r
10430 *SRC=RS2JA;DI_RS2JA;Diodes;Si; 600V 1.50A 250ns Diodes Inc. Fast Rectifier
\r
10431 .MODEL DI_RS2JA D ( IS=169u RS=4.81m BV=600 IBV=5.00u
\r
10432 + CJO=55.5p M=0.333 N=6.02 TT=360n )
\r
10433 ******************************************************************************************************
\r
10435 *SRC=RS2K;DI_RS2K;Diodes;Si; 800V 1.50A 500ns Diodes Inc. Fast Rectifier
\r
10436 .MODEL DI_RS2K D ( IS=169u RS=4.81m BV=800 IBV=5.00u
\r
10437 + CJO=55.5p M=0.333 N=6.02 TT=720n )
\r
10438 ******************************************************************************************************
\r
10440 *SRC=RS2KA;DI_RS2KA;Diodes;Si; 800V 1.50A 500ns Diodes Inc. Fast Rectifier
\r
10441 .MODEL DI_RS2KA D ( IS=169u RS=4.81m BV=800 IBV=5.00u
\r
10442 + CJO=55.5p M=0.333 N=6.02 TT=720n )
\r
10443 ******************************************************************************************************
\r
10445 *SRC=RS2M;DI_RS2M;Diodes;Si; 1.00kV 1.50A 500ns Diodes Inc. Fast Rectifier
\r
10446 .MODEL DI_RS2M D ( IS=169u RS=4.81m BV=1.00k IBV=5.00u
\r
10447 + CJO=55.5p M=0.333 N=6.02 TT=720n )
\r
10448 ******************************************************************************************************
\r
10450 *SRC=RS2MA;DI_RS2MA;Diodes;Si; 1.00kV 1.50A 500ns Diodes Inc. Fast Rectifier
\r
10451 .MODEL DI_RS2MA D ( IS=169u RS=4.81m BV=1.00k IBV=5.00u
\r
10452 + CJO=55.5p M=0.333 N=6.02 TT=720n )
\r
10453 ******************************************************************************************************
\r
10455 *SRC=RS3A;DI_RS3A;Diodes;Si; 50.0V 3.00A 150ns Diodes Inc. Fast Rectifier
\r
10456 .MODEL DI_RS3A D ( IS=200n RS=25.4m BV=50.0 IBV=5.00u
\r
10457 + CJO=92.5p M=0.333 N=2.23 TT=216n )
\r
10458 **********************************************************************************************************
\r
10460 *SRC=RS3AB;DI_RS3AB;Diodes;Si; 50.0V 3.00A 150ns Diodes Inc. Fast Rectifier
\r
10461 .MODEL DI_RS3AB D ( IS=200n RS=25.4m BV=50.0 IBV=5.00u
\r
10462 + CJO=92.5p M=0.333 N=2.23 TT=216n )
\r
10463 **********************************************************************************************************
\r
10465 *SRC=RS3B;DI_RS3B;Diodes;Si; 100V 3.00A 150ns Diodes Inc. Fast Rectifier
\r
10466 .MODEL DI_RS3B D ( IS=200n RS=25.4m BV=100 IBV=5.00u
\r
10467 + CJO=92.5p M=0.333 N=2.23 TT=216n )
\r
10468 **********************************************************************************************************
\r
10470 *SRC=RS3BB;DI_RS3BB;Diodes;Si; 100V 3.00A 150ns Diodes Inc. Fast Rectifier
\r
10471 .MODEL DI_RS3BB D ( IS=200n RS=25.4m BV=100 IBV=5.00u
\r
10472 + CJO=92.5p M=0.333 N=2.23 TT=216n )
\r
10473 **********************************************************************************************************
\r
10475 *SRC=RS3D;DI_RS3D;Diodes;Si; 200V 3.00A 150ns Diodes Inc. Fast Rectifier
\r
10476 .MODEL DI_RS3D D ( IS=200n RS=25.4m BV=200 IBV=5.00u
\r
10477 + CJO=92.5p M=0.333 N=2.23 TT=216n )
\r
10478 **********************************************************************************************************
\r
10480 *SRC=RS3DB;DI_RS3DB;Diodes;Si; 200V 3.00A 150ns Diodes Inc. Fast Rectifier
\r
10481 .MODEL DI_RS3DB D ( IS=200n RS=25.4m BV=200 IBV=5.00u
\r
10482 + CJO=92.5p M=0.333 N=2.23 TT=216n )
\r
10483 **********************************************************************************************************
\r
10485 *SRC=RS3G;DI_RS3G;Diodes;Si; 400V 3.00A 150ns Diodes Inc. Fast Rectifier
\r
10486 .MODEL DI_RS3G D ( IS=200n RS=25.4m BV=400 IBV=5.00u
\r
10487 + CJO=92.5p M=0.333 N=2.23 TT=216n )
\r
10488 **********************************************************************************************************
\r
10490 *SRC=RS3GB;DI_RS3GB;Diodes;Si; 400V 3.00A 150ns Diodes Inc. Fast Rectifier
\r
10491 .MODEL DI_RS3GB D ( IS=200n RS=25.4m BV=400 IBV=5.00u
\r
10492 + CJO=92.5p M=0.333 N=2.23 TT=216n )
\r
10493 **********************************************************************************************************
\r
10495 *SRC=RS3J;DI_RS3J;Diodes;Si; 600V 3.00A 250ns Diodes Inc. Fast Rectifier
\r
10496 .MODEL DI_RS3J D ( IS=200n RS=25.4m BV=600 IBV=5.00u
\r
10497 + CJO=92.5p M=0.333 N=2.23 TT=360n )
\r
10498 **********************************************************************************************************
\r
10500 *SRC=RS3JB;DI_RS3JB;Diodes;Si; 600V 3.00A 250ns Diodes Inc. Fast Rectifier
\r
10501 .MODEL DI_RS3JB D ( IS=200n RS=25.4m BV=600 IBV=5.00u
\r
10502 + CJO=92.5p M=0.333 N=2.23 TT=360n )
\r
10503 **********************************************************************************************************
\r
10505 *SRC=RS3K;DI_RS3K;Diodes;Si; 800V 3.00A 500ns Diodes Inc. Fast Rectifier
\r
10506 .MODEL DI_RS3K D ( IS=200n RS=25.4m BV=800 IBV=5.00u
\r
10507 + CJO=92.5p M=0.333 N=2.23 TT=720n )
\r
10508 ***********************************************************************************************************
\r
10510 *SRC=RS3KB;DI_RS3KB;Diodes;Si; 800V 3.00A 500ns Diodes Inc. Fast Rectifier
\r
10511 .MODEL DI_RS3KB D ( IS=200n RS=25.4m BV=800 IBV=5.00u
\r
10512 + CJO=92.5p M=0.333 N=2.23 TT=720n )
\r
10513 ***********************************************************************************************************
\r
10515 *SRC=RS3M;DI_RS3M;Diodes;Si; 1.00kV 3.00A 500ns Diodes Inc. Fast Rectifier
\r
10516 .MODEL DI_RS3M D ( IS=200n RS=25.4m BV=1.00k IBV=5.00u
\r
10517 + CJO=92.5p M=0.333 N=2.23 TT=720n )
\r
10518 ***********************************************************************************************************
\r
10520 *SRC=RS3MB;DI_RS3MB;Diodes;Si; 1.00kV 3.00A 500ns Diodes Inc. Fast Rectifier
\r
10521 .MODEL DI_RS3MB D ( IS=200n RS=25.4m BV=1.00k IBV=5.00u
\r
10522 + CJO=92.5p M=0.333 N=2.23 TT=720n )
\r
10523 ***********************************************************************************************************
\r
10525 *SRC=SF10AG;DI_SF10AG;Diodes;Si; 50.0V 1.00A 35.0ns Diodes Inc.
\r
10526 .MODEL DI_SF10AG D ( IS=1.42n RS=42.0m BV=50.0 IBV=10.0u
\r
10527 + CJO=139p M=0.333 N=1.70 TT=50.4n )
\r
10529 *SRC=SF10BG;DI_SF10BG;Diodes;Si; 100V 1.00A 35.0ns Diodes Inc.
\r
10530 .MODEL DI_SF10BG D ( IS=1.42n RS=42.0m BV=100 IBV=10.0u
\r
10531 + CJO=139p M=0.333 N=1.70 TT=50.4n )
\r
10533 *SRC=SF10CG;DI_SF10CG;Diodes;Si; 150V 1.00A 35.0ns Diodes Inc.
\r
10534 .MODEL DI_SF10CG D ( IS=1.42n RS=42.0m BV=150 IBV=10.0u
\r
10535 + CJO=139p M=0.333 N=1.70 TT=50.4n )
\r
10537 *SRC=SF10DG;DI_SF10DG;Diodes;Si; 200V 1.00A 35.0ns Diodes Inc.
\r
10538 .MODEL DI_SF10DG D ( IS=1.42n RS=42.0m BV=200 IBV=10.0u
\r
10539 + CJO=139p M=0.333 N=1.70 TT=50.4n )
\r
10541 *SRC=SF10FG;DI_SF10FG;Diodes;Si; 300V 1.00A 40.0ns Diodes Inc. -
\r
10542 .MODEL DI_SF10FG D ( IS=50.9p RS=75.5m BV=300 IBV=10.0u
\r
10543 + CJO=139p M=0.333 N=1.70 TT=57.6n )
\r
10545 *SRC=SF10GG;DI_SF10GG;Diodes;Si; 400V 1.00A 40.0ns Diodes Inc. -
\r
10546 .MODEL DI_SF10GG D ( IS=50.9p RS=75.5m BV=400 IBV=10.0u
\r
10547 + CJO=139p M=0.333 N=1.70 TT=57.6n )
\r
10549 *SRC=SF10HG;DI_SF10HG;Diodes;Si; 500V 1.00A 50.0ns Diodes Inc. -
\r
10550 .MODEL DI_SF10HG D ( IS=13.5u RS=30.9m BV=500 IBV=10.0u
\r
10551 + CJO=92.5p M=0.333 N=5.40 TT=72.0n )
\r
10553 *SRC=SF10JG;DI_SF10JG;Diodes;Si; 600V 1.00A 50.0ns Diodes Inc. -
\r
10554 .MODEL DI_SF10JG D ( IS=13.5u RS=30.9m BV=600 IBV=10.0u
\r
10555 + CJO=92.5p M=0.333 N=5.40 TT=72.0n )
\r
10557 *SRC=US1A;DI_US1A;Diodes;Si; 50.0V 1.00A 50.0ns Diodes Inc. -
\r
10558 .MODEL DI_US1A D ( IS=667n RS=72.0m BV=50.0 IBV=5.00u
\r
10559 + CJO=37.0p M=0.333 N=2.41 TT=72.0n )
\r
10561 *SRC=US1B;DI_US1B;Diodes;Si; 100V 1.00A 50.0ns Diodes Inc. -
\r
10562 .MODEL DI_US1B D ( IS=667n RS=72.0m BV=100 IBV=5.00u
\r
10563 + CJO=37.0p M=0.333 N=2.41 TT=72.0n )
\r
10565 *SRC=US1D;DI_US1D;Diodes;Si; 200V 1.00A 50.0ns Diodes Inc. -
\r
10566 .MODEL DI_US1D D ( IS=667n RS=72.0m BV=200 IBV=5.00u
\r
10567 + CJO=37.0p M=0.333 N=2.41 TT=72.0n )
\r
10569 *SRC=US1G;DI_US1G;Diodes;Si; 400V 1.00A 50.0ns Diodes Inc.
\r
10570 .MODEL DI_US1G D ( IS=540p RS=0.116 BV=400 IBV=5.00u
\r
10571 + CJO=37.0p M=0.333 N=1.70 TT=72.0n )
\r
10573 *SRC=US1J;DI_US1J;Diodes;Si; 600V 1.00A 75.0ns Diodes Inc. -
\r
10574 .MODEL DI_US1J D ( IS=709n RS=82.3m BV=600 IBV=5.00u
\r
10575 + CJO=18.5p M=0.333 N=3.23 TT=108n )
\r
10577 *SRC=US1K;DI_US1K;Diodes;Si; 800V 1.00A 75.0ns Diodes Inc. -
\r
10578 .MODEL DI_US1K D ( IS=709n RS=82.3m BV=800 IBV=5.00u
\r
10579 + CJO=18.5p M=0.333 N=3.23 TT=108n )
\r
10581 *SRC=US1M;DI_US1M;Diodes;Si; 1.00kV 1.00A 75.0ns Diodes Inc. -
\r
10582 .MODEL DI_US1M D ( IS=709n RS=82.3m BV=1.00k IBV=5.00u
\r
10583 + CJO=18.5p M=0.333 N=3.23 TT=108n )
\r
10585 *SRC=MBR10100CT;DI_MBR10100CT;Diodes;Si; 100V 10.0A 5.00ns Diodes Inc.
\r
10586 .MODEL DI_MBR10100CT D ( IS=27.9n RS=4.20m BV=100 IBV=100u
\r
10587 + CJO=555p M=0.333 N=1.28 TT=7.20n )
\r
10589 *SRC=MBR1030CT;DI_MBR1030CT;Diodes;Si; 30.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r\r
10590 .MODEL DI_MBR1030CT D ( IS=4.25u RS=13.0m BV=30.0 IBV=100u
\r\r
10591 + CJO=318p M=0.333 N=1.15 TT=14.4n )
\r
10593 *SRC=MBR1040CT;DI_MBR1040CT;Diodes;Si; 40.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r\r
10594 .MODEL DI_MBR1040CT D ( IS=4.25u RS=13.0m BV=40.0 IBV=100u
\r\r
10595 + CJO=318p M=0.333 N=1.15 TT=14.4n )
\r
10597 *SRC=MBR1045CT;DI_MBR1045CT;Diodes;Si; 45.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r\r
10598 .MODEL DI_MBR1045CT D ( IS=4.25u RS=13.0m BV=45.0 IBV=100u
\r\r
10599 + CJO=318p M=0.333 N=1.15 TT=14.4n )
\r
10601 *SRC=MBR1050CT;DI_MBR1050CT;Diodes;Si; 50.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r\r
10602 .MODEL DI_MBR1050CT D ( IS=7.24u RS=14.5m BV=50.0 IBV=100u
\r\r
10603 + CJO=318p M=0.333 N=1.29 TT=14.4n )
\r
10605 *SRC=MBR1060CT;DI_MBR1060CT;Diodes;Si; 60.0V 10.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r\r
10606 .MODEL DI_MBR1060CT D ( IS=7.24u RS=14.5m BV=60.0 IBV=100u
\r\r
10607 + CJO=318p M=0.333 N=1.29 TT=14.4n )
\r
10609 *SRC=SB1100;DI_SB1100;Diodes;Si; 100.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
10610 .MODEL DI_SB1100 D ( IS=6.63u RS=62.3m BV=100.0 IBV=500u
\r
10611 + CJO=199p M=0.333 N=1.70 TT=7.20n )
\r
10613 *SRC=SB120;DI_SB120;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
10614 .MODEL DI_SB120 D ( IS=31.5u RS=49.2m BV=20.0 IBV=500u
\r
10615 + CJO=239p M=0.333 N=1.70 TT=7.20n )
\r
10617 *SRC=SB130;DI_SB130;Diodes;Si; 30.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
10618 .MODEL DI_SB130 D ( IS=31.5u RS=49.2m BV=30.0 IBV=500u
\r
10619 + CJO=239p M=0.333 N=1.70 TT=7.20n )
\r
10621 *SRC=SB140;DI_SB140;Diodes;Si; 40.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
10622 .MODEL DI_SB140 D ( IS=31.5u RS=49.2m BV=40.0 IBV=500u
\r
10623 + CJO=239p M=0.333 N=1.70 TT=7.20n )
\r
10625 *SRC=SB150;DI_SB150;Diodes;Si; 50.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
10626 .MODEL DI_SB150 D ( IS=1.17u RS=42.0m BV=50.0 IBV=500u
\r
10627 + CJO=172p M=0.333 N=1.28 TT=7.20n )
\r
10629 *SRC=SB160;DI_SB160;Diodes;Si; 60.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
10630 .MODEL DI_SB160 D ( IS=1.17u RS=42.0m BV=60.0 IBV=500u
\r
10631 + CJO=172p M=0.333 N=1.28 TT=7.20n )
\r
10633 *SRC=SB170;DI_SB170;Diodes;Si; 70.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
10634 .MODEL DI_SB170 D ( IS=6.63u RS=62.3m BV=70.0 IBV=500u
\r
10635 + CJO=199p M=0.333 N=1.70 TT=7.20n )
\r
10637 *SRC=SB180;DI_SB180;Diodes;Si; 80.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
10638 .MODEL DI_SB180 D ( IS=6.63u RS=62.3m BV=80.0 IBV=500u
\r
10639 + CJO=199p M=0.333 N=1.70 TT=7.20n )
\r
10641 *SRC=SB190;DI_SB190;Diodes;Si; 90.0V 1.00A 5.00ns Diodes Inc. Schottky
\r
10642 .MODEL DI_SB190 D ( IS=6.63u RS=62.3m BV=90.0 IBV=500u
\r
10643 + CJO=199p M=0.333 N=1.70 TT=7.20n )
\r
10645 *SRC=SB340;DI_SB340;Diodes;Si; 40.0V 3.00A 5.00ns Diodes Inc. Schottky
\r
10646 .MODEL DI_SB340 D ( IS=85.9n RS=18.5m BV=40.0 IBV=70.0u
\r
10647 + CJO=411p M=0.333 N=0.754 TT=7.20n )
\r
10649 *SRC=SBL1030;DI_SBL1030;Diodes;Si; 30.0V 10.0A 5.00ns Diodes Inc. Schottky
\r.MODEL DI_SBL1030 D ( IS=759u RS=4.20m BV=30.0 IBV=1.00m
\r+ CJO=2.12n M=0.333 N=1.70 TT=7.20n )
\r
10651 *SRC=SBL1030CT;DI_SBL1030CT;Diodes;Si; 30.0V 10.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL1030CT D ( IS=759u RS=4.20m BV=30.0 IBV=500u
\r+ CJO=941p M=0.333 N=1.70 TT=7.20n )
\r
10653 *SRC=SBL1035;DI_SBL1035;Diodes;Si; 35.0V 10.0A 5.00ns Diodes Inc. Schottky
\r.MODEL DI_SBL1035 D ( IS=759u RS=4.20m BV=35.0 IBV=1.00m
\r+ CJO=2.12n M=0.333 N=1.70 TT=7.20n )
\r
10655 *SRC=SBL1035CT;DI_SBL1035CT;Diodes;Si; 35.0V 10.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL1035CT D ( IS=759u RS=4.20m BV=35.0 IBV=500u
\r+ CJO=941p M=0.333 N=1.70 TT=7.20n )
\r
10657 *SRC=SBL1040;DI_SBL1040;Diodes;Si; 40.0V 10.0A 5.00ns Diodes Inc. Schottky
\r.MODEL DI_SBL1040 D ( IS=759u RS=4.20m BV=40.0 IBV=1.00m
\r+ CJO=2.12n M=0.333 N=1.70 TT=7.20n )
\r
10659 *SRC=SBL1040CT;DI_SBL1040CT;Diodes;Si; 40.0V 10.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL1040CT D ( IS=759u RS=4.20m BV=40.0 IBV=500u
\r+ CJO=941p M=0.333 N=1.70 TT=7.20n )
\r
10661 *SRC=SBL1045;DI_SBL1045;Diodes;Si; 45.0V 10.0A 5.00ns Diodes Inc. Schottky
\r.MODEL DI_SBL1045 D ( IS=759u RS=4.20m BV=45.0 IBV=1.00m
\r+ CJO=2.12n M=0.333 N=1.70 TT=7.20n )
\r
10663 *SRC=SBL1045CT;DI_SBL1045CT;Diodes;Si; 45.0V 10.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL1045CT D ( IS=759u RS=4.20m BV=45.0 IBV=500u
\r+ CJO=941p M=0.333 N=1.70 TT=7.20n )
\r
10665 *SRC=SBL1050;DI_SBL1050;Diodes;Si; 50.0V 10.0A 5.00ns Diodes Inc. Schottky
\r.MODEL DI_SBL1050 D ( IS=210u RS=4.22m BV=50.0 IBV=1.00m
\r+ CJO=2.12n M=0.333 N=2.03 TT=7.20n )
\r
10667 *SRC=SBL1050CT;DI_SBL1050CT;Diodes;Si; 50.0V 10.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL1050CT D ( IS=210u RS=4.22m BV=50.0 IBV=500u
\r+ CJO=941p M=0.333 N=2.03 TT=7.20n )
\r
10669 *SRC=SBL1060;DI_SBL1060;Diodes;Si; 60.0V 10.0A 5.00ns Diodes Inc. Schottky
\r.MODEL DI_SBL1060 D ( IS=210u RS=4.22m BV=60.0 IBV=1.00m
\r+ CJO=2.12n M=0.333 N=2.03 TT=7.20n )
\r
10671 *SRC=SBL1060CT;DI_SBL1060CT;Diodes;Si; 60.0V 10.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL1060CT D ( IS=210u RS=4.22m BV=60.0 IBV=500u
\r+ CJO=941p M=0.333 N=2.03 TT=7.20n )
\r
10673 *SRC=SBL1630;DI_SBL1630;Diodes;Si; 30.0V 16.0A 5.00ns Diodes Inc. Schottky
\r.MODEL DI_SBL1630 D ( IS=903u RS=3.60m BV=30.0 IBV=1.00m
\r+ CJO=1.72n M=0.333 N=1.67 TT=7.20n )
\r
10675 *SRC=SBL1630PT;DI_SBL1630PT;Diodes;Si; 30.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r
10676 .MODEL DI_SBL1630PT D ( IS=575u RS=3.47m BV=30.0 IBV=500u
\r
10677 + CJO=1.86n M=0.333 N=1.68 TT=7.20n )
\r
10679 *SRC=SBL1635;DI_SBL1635;Diodes;Si; 35.0V 16.0A 5.00ns Diodes Inc. Schottky
\r.MODEL DI_SBL1635 D ( IS=903u RS=3.60m BV=35.0 IBV=1.00m
\r+ CJO=1.72n M=0.333 N=1.67 TT=7.20n )
\r
10681 *SRC=SBL1635PT;DI_SBL1635PT;Diodes;Si; 35.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r
10682 .MODEL DI_SBL1635PT D ( IS=575u RS=3.47m BV=35.0 IBV=500u
\r
10683 + CJO=1.86n M=0.333 N=1.68 TT=7.20n )
\r
10685 *SRC=SBL1640;DI_SBL1640;Diodes;Si; 40.0V 16.0A 5.00ns Diodes Inc. Schottky
\r.MODEL DI_SBL1640 D ( IS=903u RS=3.60m BV=40.0 IBV=1.00m
\r+ CJO=1.72n M=0.333 N=1.67 TT=7.20n )
\r
10687 *SRC=SBL1640PT;DI_SBL1640PT;Diodes;Si; 40.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r
10688 .MODEL DI_SBL1640PT D ( IS=575u RS=3.47m BV=40.0 IBV=500u
\r
10689 + CJO=1.86n M=0.333 N=1.68 TT=7.20n )
\r
10691 *SRC=SBL1645;DI_SBL1645;Diodes;Si; 45.0V 16.0A 5.00ns Diodes Inc. Schottky
\r.MODEL DI_SBL1645 D ( IS=903u RS=3.60m BV=45.0 IBV=1.00m
\r+ CJO=1.72n M=0.333 N=1.67 TT=7.20n )
\r
10693 *SRC=SBL1645PT;DI_SBL1645PT;Diodes;Si; 45.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r
10694 .MODEL DI_SBL1645PT D ( IS=575u RS=3.47m BV=45.0 IBV=500u
\r
10695 + CJO=1.86n M=0.333 N=1.68 TT=7.20n )
\r
10697 *SRC=SBL1650;DI_SBL1650;Diodes;Si; 50.0V 16.0A 5.00ns Diodes Inc. Schottky
\r.MODEL DI_SBL1650 D ( IS=1.38m RS=3.22m BV=50.0 IBV=1.00m
\r+ CJO=1.72n M=0.333 N=2.27 TT=7.20n )
\r
10699 *SRC=SBL1650PT;DI_SBL1650PT;Diodes;Si; 50.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r
10700 .MODEL DI_SBL1650PT D ( IS=89.9u RS=3.60m BV=50.0 IBV=500u
\r
10701 + CJO=1.86n M=0.333 N=1.67 TT=7.20n )
\r
10703 *SRC=SBL1660;DI_SBL1660;Diodes;Si; 60.0V 16.0A 5.00ns Diodes Inc. Schottky
\r.MODEL DI_SBL1660 D ( IS=1.38m RS=3.22m BV=60.0 IBV=1.00m
\r+ CJO=1.72n M=0.333 N=2.27 TT=7.20n )
\r
10705 *SRC=SBL1660PT;DI_SBL1660PT;Diodes;Si; 60.0V 16.0A 5.00ns Diodes Inc. Schottky - Single device of dual
\r
10706 .MODEL DI_SBL1660PT D ( IS=89.9u RS=3.60m BV=60.0 IBV=500u
\r
10707 + CJO=1.86n M=0.333 N=1.67 TT=7.20n )
\r
10709 *SRC=SBL2030CT;DI_SBL2030CT;Diodes;Si; 30.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL2030CT D ( IS=4.83m RS=2.37m BV=30.0 IBV=1.00m
\r+ CJO=1.34n M=0.333 N=2.28 TT=14.4n )
\r
10711 *SRC=SBL2030PT;DI_SBL2030PT;Diodes;Si; 30.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL2030PT D ( IS=597u RS=2.88m BV=30.0 IBV=1.00m
\r+ CJO=2.52n M=0.333 N=1.59 TT=14.4n )
\r
10713 *SRC=SBL2035CT;DI_SBL2035CT;Diodes;Si; 35.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL2035CT D ( IS=4.83m RS=2.37m BV=35.0 IBV=1.00m
\r+ CJO=1.34n M=0.333 N=2.28 TT=14.4n )
\r
10715 *SRC=SBL2035PT;DI_SBL2035PT;Diodes;Si; 35.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL2035PT D ( IS=597u RS=2.88m BV=35.0 IBV=1.00m
\r+ CJO=2.52n M=0.333 N=1.59 TT=14.4n )
\r
10717 *SRC=SBL2040CT;DI_SBL2040CT;Diodes;Si; 40.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL2040CT D ( IS=4.83m RS=2.37m BV=40.0 IBV=1.00m
\r+ CJO=1.34n M=0.333 N=2.28 TT=14.4n )
\r
10719 *SRC=SBL2040PT;DI_SBL2040PT;Diodes;Si; 40.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL2040PT D ( IS=597u RS=2.88m BV=40.0 IBV=1.00m
\r+ CJO=2.52n M=0.333 N=1.59 TT=14.4n )
\r
10721 *SRC=SBL2045CT;DI_SBL2045CT;Diodes;Si; 45.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL2045CT D ( IS=4.83m RS=2.37m BV=45.0 IBV=1.00m
\r+ CJO=1.34n M=0.333 N=2.28 TT=14.4n )
\r
10723 *SRC=SBL2045PT;DI_SBL2045PT;Diodes;Si; 45.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL2045PT D ( IS=597u RS=2.88m BV=45.0 IBV=1.00m
\r+ CJO=2.52n M=0.333 N=1.59 TT=14.4n )
\r
10725 *SRC=SBL2050CT;DI_SBL2050CT;Diodes;Si; 50.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL2050CT D ( IS=3.50m RS=2.11m BV=50.0 IBV=1.00m
\r+ CJO=1.34n M=0.333 N=2.95 TT=14.4n )
\r
10727 *SRC=SBL2050PT;DI_SBL2050PT;Diodes;Si; 50.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL2050PT D ( IS=587u RS=2.11m BV=50.0 IBV=1.00m
\r+ CJO=2.52n M=0.333 N=2.12 TT=14.4n )
\r
10729 *SRC=SBL2060CT;DI_SBL2060CT;Diodes;Si; 60.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL2060CT D ( IS=3.50m RS=2.11m BV=60.0 IBV=1.00m
\r+ CJO=1.34n M=0.333 N=2.95 TT=14.4n )
\r
10731 *SRC=SBL2060PT;DI_SBL2060PT;Diodes;Si; 60.0V 20.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL2060PT D ( IS=587u RS=2.11m BV=60.0 IBV=1.00m
\r+ CJO=2.52n M=0.333 N=2.12 TT=14.4n )
\r
10733 *SRC=SBL3030CT;DI_SBL3030CT;Diodes;Si; 30.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL3030CT D ( IS=200u RS=1.92m BV=30.0 IBV=1.00m
\r+ CJO=809p M=0.333 N=1.42 TT=14.4n )
\r
10735 *SRC=SBL3030PT;DI_SBL3030PT;Diodes;Si; 30.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r
10736 .MODEL DI_SBL3030PT D ( IS=441u RS=1.92m BV=30.0 IBV=1.00m
\r
10737 + CJO=1.33n M=0.333 N=1.51 TT=14.4n )
\r
10739 *SRC=SBL3035PT;DI_SBL3035PT;Diodes;Si; 35.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r
10740 .MODEL DI_SBL3035PT D ( IS=441u RS=1.92m BV=35.0 IBV=1.00m
\r
10741 + CJO=1.33n M=0.333 N=1.51 TT=14.4n )
\r
10743 *SRC=SBL3040CT;DI_SBL3040CT;Diodes;Si; 40.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL3040CT D ( IS=200u RS=1.92m BV=40.0 IBV=1.00m
\r+ CJO=809p M=0.333 N=1.42 TT=14.4n )
\r
10745 *SRC=SBL3040PT;DI_SBL3040PT;Diodes;Si; 40.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r
10746 .MODEL DI_SBL3040PT D ( IS=441u RS=1.92m BV=40.0 IBV=1.00m
\r
10747 + CJO=1.33n M=0.333 N=1.51 TT=14.4n )
\r
10749 *SRC=SBL3045CT;DI_SBL3045CT;Diodes;Si; 45.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL3045CT D ( IS=200u RS=1.92m BV=45.0 IBV=1.00m
\r+ CJO=809p M=0.333 N=1.42 TT=14.4n )
\r
10751 *SRC=SBL3045PT;DI_SBL3045PT;Diodes;Si; 45.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r
10752 .MODEL DI_SBL3045PT D ( IS=441u RS=1.92m BV=45.0 IBV=1.00m
\r
10753 + CJO=1.33n M=0.333 N=1.51 TT=14.4n )
\r
10755 *SRC=SBL3050CT;DI_SBL3050CT;Diodes;Si; 50.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL3050CT D ( IS=264u RS=1.99m BV=50.0 IBV=1.00m
\r+ CJO=809p M=0.333 N=1.67 TT=14.4n )
\r
10757 *SRC=SBL3050PT;DI_SBL3050PT;Diodes;Si; 50.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r
10758 .MODEL DI_SBL3050PT D ( IS=346u RS=1.61m BV=50.0 IBV=1.00m
\r
10759 + CJO=1.33n M=0.333 N=2.02 TT=14.4n )
\r
10761 *SRC=SBL3060CT;DI_SBL3060CT;Diodes;Si; 60.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL3060CT D ( IS=264u RS=1.99m BV=60.0 IBV=1.00m
\r+ CJO=809p M=0.333 N=1.67 TT=14.4n )
\r
10763 *SRC=SBL3060PT;DI_SBL3060PT;Diodes;Si; 60.0V 30.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r
10764 .MODEL DI_SBL3060PT D ( IS=346u RS=1.61m BV=60.0 IBV=1.00m
\r
10765 + CJO=1.33n M=0.333 N=2.02 TT=14.4n)
\r
10767 *SRC=SBL4030PT;DI_SBL4030PT;Diodes;Si; 30.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r
10768 .MODEL DI_SBL4030PT D ( IS=10.9u RS=1.53m BV=30.0 IBV=1.00m
\r
10769 + CJO=1.33n M=0.333 N=1.08 TT=14.4n )
\r
10771 *SRC=SBL4035PT;DI_SBL4035PT;Diodes;Si; 35.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r
10772 .MODEL DI_SBL4035PT D ( IS=10.9u RS=1.53m BV=35.0 IBV=1.00m
\r
10773 + CJO=1.33n M=0.333 N=1.08 TT=14.4n )
\r
10775 *SRC=SBL4040PT;DI_SBL4040PT;Diodes;Si; 40.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL4040PT D ( IS=10.9u RS=1.53m BV=40.0 IBV=1.00m
\r+ CJO=1.33n M=0.333 N=1.08 TT=14.4n )
\r
10777 *SRC=SBL4045PT;DI_SBL4045PT;Diodes;Si; 45.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r
10778 .MODEL DI_SBL4045PT D ( IS=10.9u RS=1.53m BV=45.0 IBV=1.00m
\r
10779 + CJO=1.33n M=0.333 N=1.08 TT=14.4n )
\r
10781 *SRC=SBL4050PT;DI_SBL4050PT;Diodes;Si; 50.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r
10782 .MODEL DI_SBL4050PT D ( IS=53.0u RS=1.26m BV=50.0 IBV=1.00m
\r
10783 + CJO=1.33n M=0.333 N=1.70 TT=14.4n )
\r
10785 *SRC=SBL4060PT;DI_SBL4060PT;Diodes;Si; 60.0V 40.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r
10786 .MODEL DI_SBL4060PT D ( IS=53.0u RS=1.26m BV=60.0 IBV=1.00m
\r
10787 + CJO=1.33n M=0.333 N=1.70 TT=14.4n )
\r
10789 *SRC=SBL530;DI_SBL530;Diodes;Si; 30.0V 5.00A 10.0ns Diodes Inc. Schottky
\r.MODEL DI_SBL530 D ( IS=926u RS=9.47m BV=30.0 IBV=500u
\r+ CJO=968p M=0.333 N=1.69 TT=14.4n )
\r
10791 *SRC=SBL535;DI_SBL535;Diodes;Si; 35.0V 5.00A 10.0ns Diodes Inc. Schottky
\r.MODEL DI_SBL535 D ( IS=926u RS=9.47m BV=35.0 IBV=500u
\r+ CJO=968p M=0.333 N=1.69 TT=14.4n )
\r
10793 *SRC=SBL540;DI_SBL540;Diodes;Si; 40.0V 5.00A 10.0ns Diodes Inc. Schottky
\r.MODEL DI_SBL540 D ( IS=926u RS=9.47m BV=40.0 IBV=500u
\r+ CJO=968p M=0.333 N=1.69 TT=14.4n )
\r
10795 *SRC=SBL545;DI_SBL545;Diodes;Si; 45.0V 5.00A 10.0ns Diodes Inc. Schottky
\r.MODEL DI_SBL545 D ( IS=926u RS=9.47m BV=45.0 IBV=500u
\r+ CJO=968p M=0.333 N=1.69 TT=14.4n )
\r
10797 *SRC=SBL550;DI_SBL550;Diodes;Si; 50.0V 5.00A 10.0ns Diodes Inc. Schottky
\r.MODEL DI_SBL550 D ( IS=14.0u RS=8.33m BV=50.0 IBV=500u
\r+ CJO=968p M=0.333 N=1.70 TT=14.4n )
\r
10799 *SRC=SBL560;DI_SBL560;Diodes;Si; 60.0V 5.00A 10.0ns Diodes Inc. Schottky
\r.MODEL DI_SBL560 D ( IS=14.0u RS=8.33m BV=60.0 IBV=500u
\r+ CJO=968p M=0.333 N=1.70 TT=14.4n )
\r
10801 *SRC=SBL6030PT;DI_SBL6030PT;Diodes;Si; 30.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL6030PT D ( IS=1.93m RS=917u BV=30.0 IBV=20.0m
\r+ CJO=3.25n M=0.333 N=1.68 TT=14.4n )
\r
10803 *SRC=SBL6040PT;DI_SBL6040PT;Diodes;Si; 40.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL6040PT D ( IS=1.93m RS=917u BV=40.0 IBV=20.0m
\r+ CJO=3.25n M=0.333 N=1.68 TT=14.4n )
\r
10805 *SRC=SBL6050PT;DI_SBL6050PT;Diodes;Si; 50.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL6050PT D ( IS=353u RS=909u BV=50.0 IBV=20.0m
\r+ CJO=3.25n M=0.333 N=1.76 TT=14.4n )
\r
10807 *SRC=SBL6060PT;DI_SBL6060PT;Diodes;Si; 60.0V 60.0A 10.0ns Diodes Inc. Schottky - Single device of dual
\r.MODEL DI_SBL6060PT D ( IS=353u RS=909u BV=60.0 IBV=20.0m
\r+ CJO=3.25n M=0.333 N=1.76 TT=14.4n )
\r
10809 *SRC=SBL830;DI_SBL830;Diodes;Si; 30.0V 8.00A 10.0ns Diodes Inc. Schottky
\r
10810 .MODEL DI_SBL830 D ( IS=396u RS=4.50m BV=30.0 IBV=500u
\r
10811 + CJO=1.72n M=0.333 N=1.71 TT=14.4n )
\r
10813 *SRC=SBL835;DI_SBL835;Diodes;Si; 35.0V 8.00A 10.0ns Diodes Inc. Schottky
\r
10814 .MODEL DI_SBL835 D ( IS=396u RS=4.50m BV=35.0 IBV=500u
\r
10815 + CJO=1.72n M=0.333 N=1.71 TT=14.4n )
\r
10817 *SRC=SBL840;DI_SBL840;Diodes;Si; 40.0V 8.00A 10.0ns Diodes Inc. Schottky
\r
10818 .MODEL DI_SBL840 D ( IS=396u RS=4.50m BV=40.0 IBV=500u
\r
10819 + CJO=1.72n M=0.333 N=1.71 TT=14.4n )
\r
10821 *SRC=SBL845;DI_SBL845;Diodes;Si; 45.0V 8.00A 10.0ns Diodes Inc. Schottky
\r
10822 .MODEL DI_SBL845 D ( IS=396u RS=4.50m BV=45.0 IBV=500u
\r
10823 + CJO=1.72n M=0.333 N=1.71 TT=14.4n )
\r
10825 *SRC=SBL850;DI_SBL850;Diodes;Si; 50.0V 8.00A 10.0ns Diodes Inc. Schottky
\r
10826 .MODEL DI_SBL850 D ( IS=30.8u RS=5.66m BV=50.0 IBV=500u
\r
10827 + CJO=1.72n M=0.333 N=1.69 TT=14.4n )
\r
10829 *SRC=SBL860;DI_SBL860;Diodes;Si; 60.0V 8.00A 10.0ns Diodes Inc. Schottky
\r
10830 .MODEL DI_SBL860 D ( IS=30.8u RS=5.66m BV=60.0 IBV=500u
\r
10831 + CJO=1.72n M=0.333 N=1.69 TT=14.4n )
\r
10833 *SRC=SD830;DI_SD830;Diodes;Si; 30.0V 8.00A 5.00ns Diodes Inc. Schottky
\r
10834 .MODEL DI_SD830 D ( IS=248u RS=5.25m BV=30.0 IBV=1.00m
\r
10835 + CJO=1.06n M=0.333 N=1.70 TT=7.20n )
\r
10837 *SRC=SD840;DI_SD840;Diodes;Si; 40.0V 8.00A 5.00ns Diodes Inc. Schottky
\r
10838 .MODEL DI_SD840 D ( IS=248u RS=5.25m BV=40.0 IBV=1.00m
\r
10839 + CJO=1.06n M=0.333 N=1.70 TT=7.20n )
\r
10841 *SRC=SD845;DI_SD845;Diodes;Si; 45.0V 8.00A 5.00ns Diodes Inc. Schottky
\r
10842 .MODEL DI_SD845 D ( IS=248u RS=5.25m BV=45.0 IBV=1.00m
\r
10843 + CJO=1.06n M=0.333 N=1.70 TT=7.20n )
\r
10845 *SRC=SD860;DI_SD860;Diodes;Si; 60.0V 8.00A 5.00ns Diodes Inc. Schottky
\r
10846 .MODEL DI_SD860 D ( IS=248u RS=5.25m BV=60.0 IBV=1.00m
\r
10847 + CJO=1.06n M=0.333 N=1.70 TT=7.20n )
\r
10849 *SRC=BC807-16;DI_BC807-16;BJTs PNP; Si; 45.0V 0.500A 220MHz Diodes
\r
10851 .MODEL DI_BC807-16 PNP (IS=50.7f NF=1.00 BF=342 VAF=121
\r
10852 + IKF=0.273 ISE=24.2p NE=2.00 BR=4.00 NR=1.00
\r
10853 + VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m
\r
10854 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300
\r
10855 + TF=631p TR=111n EG=1.12 )
\r
10857 *SRC=BC807-25;DI_BC807-25;BJTs PNP; Si; 45.0V 0.500A 220MHz Diodes
\r
10859 .MODEL DI_BC807-25 PNP (IS=50.7f NF=1.00 BF=547 VAF=121
\r
10860 + IKF=0.273 ISE=15.1p NE=2.00 BR=4.00 NR=1.00
\r
10861 + VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m
\r
10862 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300
\r
10863 + TF=631p TR=109n EG=1.12 )
\r
10865 *SRC=BC807-40;DI_BC807-40;BJTs PNP; Si; 45.0V 0.500A 220MHz Diodes
\r
10867 .MODEL DI_BC807-40 PNP (IS=50.7f NF=1.00 BF=821 VAF=121
\r
10868 + IKF=0.273 ISE=10.1p NE=2.00 BR=4.00 NR=1.00
\r
10869 + VAR=20.0 IKR=0.675 RE=0.213 RB=0.852 RC=85.2m
\r
10870 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300
\r
10871 + TF=631p TR=108n EG=1.12 )
\r
10873 *SRC=BC817-16;DI_BC817-16;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes
\r
10875 .MODEL DI_BC817-16 NPN (IS=4.04n NF=1.00 BF=342 VAF=121
\r
10876 + IKF=0.273 ISE=6.86n NE=2.00 BR=4.00 NR=1.00
\r
10877 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m
\r
10878 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300
\r
10879 + TF=651p TR=111n EG=1.12 )
\r
10881 *SRC=BC817-25;DI_BC817-25;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes
\r
10883 .MODEL DI_BC817-25 NPN (IS=4.04n NF=1.00 BF=548 VAF=121
\r
10884 + IKF=0.273 ISE=4.29n NE=2.00 BR=4.00 NR=1.00
\r
10885 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m
\r
10886 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300
\r
10887 + TF=651p TR=109n EG=1.12 )
\r
10889 *SRC=BC817-40;DI_BC817-40;BJTs NPN; Si; 45.0V 0.800A 220MHz Diodes
\r
10891 .MODEL DI_BC817-40 NPN (IS=4.04n NF=1.00 BF=822 VAF=121
\r
10892 + IKF=0.273 ISE=2.86n NE=2.00 BR=4.00 NR=1.00
\r
10893 + VAR=20.0 IKR=0.675 RE=0.227 RB=0.907 RC=90.7m
\r
10894 + XTB=1.5 CJE=107p VJE=1.10 MJE=0.500 CJC=34.7p VJC=0.300 MJC=0.300
\r
10895 + TF=651p TR=108n EG=1.12 )
\r
10897 *SRC=BC846A;DI_BC846A;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc
\r
10899 .MODEL DI_BC846A NPN (IS=10.2f NF=1.00 BF=305 VAF=145
\r
10900 + IKF=53.6m ISE=5.86p NE=2.00 BR=4.00 NR=1.00
\r
10901 + VAR=24.0 IKR=0.135 RE=0.915 RB=3.66 RC=0.366
\r
10902 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300
\r
10903 + TF=416p TR=50.3n EG=1.12 )
\r
10905 *SRC=BC846AW;DI_BC846AW;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc
\r
10907 .MODEL DI_BC846AW NPN (IS=10.2f NF=1.00 BF=305 VAF=145
\r
10908 + IKF=53.6m ISE=5.86p NE=2.00 BR=4.00 NR=1.00
\r
10909 + VAR=24.0 IKR=0.135 RE=0.915 RB=3.66 RC=0.366
\r
10910 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300
\r
10911 + TF=416p TR=50.3n EG=1.12 )
\r
10913 *SRC=BC846B;DI_BC846B;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc
\r
10915 .MODEL DI_BC846B NPN (IS=10.2f NF=1.00 BF=650 VAF=145
\r
10916 + IKF=39.5m ISE=2.93p NE=2.00 BR=4.00 NR=1.00
\r
10917 + VAR=24.0 IKR=0.105 RE=0.915 RB=3.66 RC=0.366
\r
10918 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300
\r
10919 + TF=385p TR=49.0n EG=1.12 )
\r
10921 *SRC=BC846BW;DI_BC846BW;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc
\r
10923 .MODEL DI_BC846BW NPN (IS=10.2f NF=1.00 BF=650 VAF=145
\r
10924 + IKF=39.5m ISE=2.93p NE=2.00 BR=4.00 NR=1.00
\r
10925 + VAR=24.0 IKR=0.105 RE=0.915 RB=3.66 RC=0.366
\r
10926 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300
\r
10927 + TF=385p TR=49.0n EG=1.12 )
\r
10929 *SRC=BC846C;DI_BC846C;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc
\r
10931 .MODEL DI_BC846C NPN (IS=10.2f NF=1.00 BF=1.09k VAF=145
\r
10932 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00
\r
10933 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
\r
10934 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300
\r
10935 + TF=427p TR=48.6n EG=1.12 )
\r
10937 *SRC=BC846CW;DI_BC846CW;BJTs NPN; Si; 65.0V 0.100A 300MHz Diodes Inc
\r
10939 .MODEL DI_BC846CW NPN (IS=10.2f NF=1.00 BF=1.09k VAF=145
\r
10940 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00
\r
10941 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
\r
10942 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300
\r
10943 + TF=427p TR=48.6n EG=1.12 )
\r
10945 *SRC=BC847A;DI_BC847A;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc
\r
10947 .MODEL DI_BC847A NPN (IS=10.2f NF=1.00 BF=301 VAF=121
\r
10948 + IKF=60.7m ISE=5.82p NE=2.00 BR=4.00 NR=1.00
\r
10949 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
\r
10950 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300
\r
10951 + TF=427p TR=50.3n EG=1.12 )
\r
10953 *SRC=BC847AT;DI_BC847AT;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc
\r
10955 .MODEL DI_BC847AT NPN (IS=9.98f NF=1.00 BF=301 VAF=121
\r
10956 + IKF=60.7m ISE=5.75p NE=2.00 BR=4.00 NR=1.00
\r
10957 + VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326
\r
10958 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300
\r
10959 + TF=423p TR=50.3n EG=1.12 )
\r
10961 *SRC=BC847AW;DI_BC847AW;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc
\r
10963 .MODEL DI_BC847AW NPN (IS=10.2f NF=1.00 BF=301 VAF=121
\r
10964 + IKF=60.7m ISE=5.82p NE=2.00 BR=4.00 NR=1.00
\r
10965 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
\r
10966 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300
\r
10967 + TF=427p TR=50.3n EG=1.12 )
\r
10969 *SRC=BC847B;DI_BC847B;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transistor
\r
10970 .MODEL DI_BC847B NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121
\r
10971 + IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00
\r
10972 + VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306
\r
10973 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300
\r
10974 + MJC=0.300 TF=520p TR=78.9n EG=1.12 )
\r
10976 *SRC=BC847BS;DI_BC847BS;BJTs NPN; Si; 45.0V 0.100A 250MHz Diodes Inc.
\r
10978 .MODEL DI_BC847BS NPN (IS=9.98f NF=1.00 BF=616 VAF=121
\r
10979 + IKF=60.7m ISE=2.81p NE=2.00 BR=4.00 NR=1.00
\r
10980 + VAR=20.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326
\r
10981 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=4.33p VJC=0.300 MJC=0.300
\r
10982 + TF=585p TR=49.1n EG=1.12 )
\r
10984 *SRC=BC847BT;DI_BC847BT;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc
\r
10986 .MODEL DI_BC847BT NPN (IS=9.98f NF=1.00 BF=616 VAF=121
\r
10987 + IKF=60.7m ISE=2.81p NE=2.00 BR=4.00 NR=1.00
\r
10988 + VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326
\r
10989 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300
\r
10990 + TF=423p TR=49.1n EG=1.12 )
\r
10992 *SRC=BC847BV;DI_BC847BV;BJTs NPN; Si; 45.0V 0.100A 200MHz Diodes Inc. BJTs - Single device of dual
\r.MODEL DI_BC847BV NPN (IS=10.2f NF=1.00 BF=616 VAF=121
\r+ IKF=42.5m ISE=2.38p NE=2.00 BR=4.00 NR=1.00
\r+ VAR=24.0 IKR=0.105 RE=0.915 RB=3.66 RC=0.366
\r+ XTB=1.5 CJE=35.8p VJE=1.10 MJE=0.500 CJC=11.6p VJC=0.300
\r+ MJC=0.300 TF=665p TR=120n EG=1.12 )
\r
10994 *SRC=BC847BW;DI_BC847BW;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc
\r
10996 .MODEL DI_BC847BW NPN (IS=10.2f NF=1.00 BF=616 VAF=121
\r
10997 + IKF=60.7m ISE=2.84p NE=2.00 BR=4.00 NR=1.00
\r
10998 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
\r
10999 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300
\r
11000 + TF=427p TR=49.1n EG=1.12 )
\r
11002 *SRC=BC847C;DI_BC847C;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc
\r
11004 .MODEL DI_BC847C NPN (IS=10.3f NF=1.00 BF=1.09k VAF=121
\r
11005 + IKF=60.7m ISE=1.61p NE=2.00 BR=4.00 NR=1.00
\r
11006 + VAR=24.0 IKR=0.150 RE=0.965 RB=3.86 RC=0.386
\r
11007 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300
\r
11008 + TF=427p TR=48.6n EG=1.12 )
\r
11010 *SRC=BC847CT;DI_BC847CT;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc
\r
11012 .MODEL DI_BC847CT NPN (IS=9.98f NF=1.00 BF=1.09k VAF=121
\r
11013 + IKF=60.7m ISE=1.58p NE=2.00 BR=4.00 NR=1.00
\r
11014 + VAR=24.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326
\r
11015 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=13.0p VJC=0.300 MJC=0.300
\r
11016 + TF=423p TR=48.6n EG=1.12 )
\r
11018 *SRC=BC847CW;DI_BC847CW;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes Inc
\r
11020 .MODEL DI_BC847CW NPN (IS=10.2f NF=1.00 BF=1.09k VAF=121
\r
11021 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00
\r
11022 + VAR=24.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
\r
11023 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300
\r
11024 + TF=427p TR=48.6n EG=1.12 )
\r
11026 *****************************************************************************************************************************************
\r
11027 *SRC=BC847PN;DI_BC847PN_NPN;BJTs NPN; Si; 45.0V 0.100A 250MHz Diodes Inc BJTs - Complementary
\r
11028 .MODEL DI_BC847PN_NPN NPN (IS=9.98f NF=1.00 BF=616 VAF=121
\r
11029 + IKF=60.7m ISE=2.81p NE=2.00 BR=4.00 NR=1.00
\r
11030 + VAR=20.0 IKR=0.150 RE=0.815 RB=3.26 RC=0.326
\r
11031 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=4.33p VJC=0.300
\r
11032 + MJC=0.300 TF=585p TR=49.1n EG=1.12 )
\r
11034 *SRC=BC847PN;DI_BC847PN_PNP;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs - Complementary
\r
11035 .MODEL DI_BC847PN_PNP PNP (IS=10.2f NF=1.00 BF=650 VAF=121
\r
11036 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00
\r
11037 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286
\r
11038 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300
\r
11039 + MJC=0.300 TF=586p TR=95.9n EG=1.12 )
\r
11040 *****************************************************************************************************************************************
\r
11042 *SRC=BC848A;DI_BC848A;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc
\r
11044 .MODEL DI_BC848A NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6
\r
11045 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00
\r
11046 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
\r
11047 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300
\r
11048 + TF=427p TR=48.6n EG=1.12 )
\r
11050 *SRC=BC848AW;DI_BC848AW;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc
\r
11052 .MODEL DI_BC848AW NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6
\r
11053 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00
\r
11054 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
\r
11055 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300
\r
11056 + TF=427p TR=48.6n EG=1.12 )
\r
11058 *SRC=BC848B;DI_BC848B;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc
\r
11060 .MODEL DI_BC848B NPN (IS=10.2f NF=1.00 BF=616 VAF=98.6
\r
11061 + IKF=60.7m ISE=2.84p NE=2.00 BR=4.00 NR=1.00
\r
11062 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
\r
11063 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300
\r
11064 + TF=427p TR=49.1n EG=1.12 )
\r
11066 *SRC=BC848BW;DI_BC848BW;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc
\r
11068 .MODEL DI_BC848BW NPN (IS=10.2f NF=1.00 BF=616 VAF=98.6
\r
11069 + IKF=60.7m ISE=2.84p NE=2.00 BR=4.00 NR=1.00
\r
11070 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
\r
11071 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300
\r
11072 + TF=427p TR=49.1n EG=1.12 )
\r
11074 *SRC=BC848C;DI_BC848C;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc
\r
11076 .MODEL DI_BC848C NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6
\r
11077 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00
\r
11078 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
\r
11079 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300
\r
11080 + TF=427p TR=48.6n EG=1.12 )
\r
11082 *SRC=BC848CW;DI_BC848CW;BJTs NPN; Si; 30.0V 0.100A 300MHz Diodes Inc
\r
11084 .MODEL DI_BC848CW NPN (IS=10.2f NF=1.00 BF=1.09k VAF=98.6
\r
11085 + IKF=60.7m ISE=1.60p NE=2.00 BR=4.00 NR=1.00
\r
11086 + VAR=20.0 IKR=0.150 RE=0.915 RB=3.66 RC=0.366
\r
11087 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300 MJC=0.300
\r
11088 + TF=427p TR=48.6n EG=1.12 )
\r
11090 *SRC=BC856A;DI_BC856A;BJTs PNP; Si; 65.0V 0.100A 250MHz Diodes Inc. BJTs
\r\r
11091 .MODEL DI_BC856A PNP (IS=10.2f NF=1.00 BF=342 VAF=145
\r\r
11092 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00
\r\r
11093 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286
\r\r
11094 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300
\r\r
11095 + MJC=0.300 TF=581p TR=97.8n EG=1.12 )
\r
11097 *SRC=BC856AW;DI_BC856AW;BJTs PNP; Si; 65.0V 0.100A 250MHz Diodes Inc. BJTs
\r\r
11098 .MODEL DI_BC856AW PNP (IS=10.2f NF=1.00 BF=342 VAF=145
\r\r
11099 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00
\r\r
11100 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286
\r\r
11101 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300
\r\r
11102 + MJC=0.300 TF=581p TR=97.8n EG=1.12 )
\r
11104 *SRC=BC856B;DI_BC856B;BJTs PNP; Si; 80.0V 0.200A 257MHz Diodes Inc. Transistor
\r
11105 .MODEL DI_BC856B PNP (IS=3.90f NF=1.00 BF=408 VAF=161
\r
11106 + IKF=91.1m ISE=3.25p NE=2.00 BR=4.00 NR=1.00
\r
11107 + VAR=20.0 IKR=0.225 RE=0.782 RB=3.13 RC=0.313
\r
11108 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300
\r
11109 + MJC=0.300 TF=548p TR=94.5n EG=1.12 )
\r
11111 *SRC=BC856BW;DI_BC856BW;BJTs PNP; Si; 80.0V 0.200A 257MHz Diodes Inc. Transistor
\r
11112 .MODEL DI_BC856BW PNP (IS=3.90f NF=1.00 BF=408 VAF=161
\r
11113 + IKF=91.1m ISE=3.25p NE=2.00 BR=4.00 NR=1.00
\r
11114 + VAR=20.0 IKR=0.225 RE=0.782 RB=3.13 RC=0.313
\r
11115 + XTB=1.5 CJE=26.8p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300
\r
11116 + MJC=0.300 TF=548p TR=94.5n EG=1.12 )
\r
11118 *SRC=BC857A;DI_BC857A;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs
\r\r
11119 .MODEL DI_BC857A PNP (IS=10.2f NF=1.00 BF=342 VAF=121
\r\r
11120 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00
\r\r
11121 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286
\r\r
11122 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300
\r\r
11123 + MJC=0.300 TF=581p TR=97.8n EG=1.12 )
\r
11125 *SRC=BC857AT;DI_BC857AT;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs
\r\r
11126 .MODEL DI_BC857AT PNP (IS=10.2f NF=1.00 BF=342 VAF=121
\r\r
11127 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00
\r\r
11128 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286
\r\r
11129 + XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300
\r\r
11130 + MJC=0.300 TF=488p TR=97.8n EG=1.12 )
\r
11132 *SRC=BC857AW;DI_BC857AW;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs
\r\r
11133 .MODEL DI_BC857AW PNP (IS=10.2f NF=1.00 BF=342 VAF=121
\r\r
11134 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00
\r\r
11135 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286
\r\r
11136 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300
\r\r
11137 + MJC=0.300 TF=581p TR=97.8n EG=1.12 )
\r
11139 *SRC=BC857B;DI_BC857B;BJTs PNP; Si; 45.0V 0.100A 200MHz Diodes, Inc. transistor
\r
11140 .MODEL DI_BC857B PNP (IS=5.51f NF=1.00 BF=424 VAF=121
\r
11141 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00
\r
11142 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306
\r
11143 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300
\r
11144 + MJC=0.300 TF=700p TR=121n EG=1.12 )
\r
11146 *SRC=BC857BS;DI_BC857BS;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc.
\r
11147 BJTs - Single device of dual
\r
11148 .MODEL DI_BC857BS PNP (IS=10.2f NF=1.00 BF=650 VAF=121
\r
11149 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00
\r
11150 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286
\r
11151 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300 MJC=0.300
\r
11152 + TF=586p TR=95.9n EG=1.12 )
\r
11154 *SRC=BC857BT;DI_BC857BT;BJTs PNP; Si; 45.0V 0.100A 200MHz Diodes, Inc. transistor
\r
11155 .MODEL DI_BC857B PNP (IS=5.51f NF=1.00 BF=424 VAF=121
\r
11156 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00
\r
11157 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306
\r
11158 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300
\r
11159 + MJC=0.300 TF=700p TR=121n EG=1.12 )
\r
11161 *SRC=BC857BV;DI_BC857BV;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs
\r\r
11162 .MODEL DI_BC857BV PNP (IS=10.2f NF=1.00 BF=650 VAF=121
\r\r
11163 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00
\r\r
11164 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286
\r\r
11165 + XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300
\r\r
11166 + MJC=0.300 TF=499p TR=95.9n EG=1.12 )=499p TR=95.9n EG=1.12 )
\r
11168 *SRC=BC857BW;DI_BC857BW;BJTs PNP; Si; 45.0V 0.100A 200MHz Diodes, Inc. transistor
\r\r
11169 .MODEL DI_BC857BW PNP (IS=5.51f NF=1.00 BF=424 VAF=121
\r\r
11170 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00
\r\r
11171 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306
\r\r
11172 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300
\r\r
11173 + MJC=0.300 TF=700p TR=121n EG=1.12 )
\r
11175 *SRC=BC857C;DI_BC857C;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs
\r\r
11176 .MODEL DI_BC857C PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121
\r\r
11177 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00
\r\r
11178 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286
\r\r
11179 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300
\r\r
11180 + MJC=0.300 TF=587p TR=95.0n EG=1.12 )
\r
11182 *SRC=BC857CT;DI_BC857CT;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs
\r\r
11183 .MODEL DI_BC857CT PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121
\r\r
11184 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00
\r\r
11185 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286
\r\r
11186 + XTB=1.5 CJE=30.8p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300
\r\r
11187 + MJC=0.300 TF=526p TR=95.0n EG=1.12 )
\r
11189 *SRC=BC857CW;DI_BC857CW;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs
\r\r
11190 .MODEL DI_BC857CW PNP (IS=10.2f NF=1.00 BF=1.09k VAF=121
\r\r
11191 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00
\r\r
11192 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286
\r\r
11193 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300
\r\r
11194 + MJC=0.300 TF=587p TR=95.0n EG=1.12 )
\r
11196 *SRC=BC858A;DIBC858A;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs
\r\r
11197 .MODEL DIBC858A PNP (IS=10.2f NF=1.00 BF=342 VAF=98.6
\r\r
11198 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00
\r\r
11199 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286
\r\r
11200 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300
\r\r
11201 + MJC=0.300 TF=581p TR=97.8n EG=1.12 )
\r
11203 *SRC=BC858AW;DI_BC858AW;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs
\r\r
11204 .MODEL DI_BC858AW PNP (IS=10.2f NF=1.00 BF=342 VAF=98.6
\r\r
11205 + IKF=72.9m ISE=5.59p NE=2.00 BR=4.00 NR=1.00
\r\r
11206 + VAR=20.0 IKR=0.180 RE=0.715 RB=2.86 RC=0.286
\r\r
11207 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300
\r\r
11208 + MJC=0.300 TF=581p TR=97.8n EG=1.12 )
\r
11210 *SRC=BC858B;DI_BC858B;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs
\r\r
11211 .MODEL DI_BC858B PNP (IS=10.2f NF=1.00 BF=650 VAF=98.6
\r\r
11212 + IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00
\r\r
11213 + VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286
\r\r
11214 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300
\r\r
11215 + MJC=0.300 TF=586p TR=95.9n EG=1.12 )
\r
11217 *SRC=BC858BW;DI_BC858BW;BJTs PNP; Si; 30.0V 0.100A 200MHz Diodes, Inc. transistor
\r
11218 .MODEL DI_BC858BW PNP (IS=5.51f NF=1.00 BF=424 VAF=98.6
\r
11219 + IKF=36.4m ISE=2.35p NE=2.00 BR=4.00 NR=1.00
\r
11220 + VAR=20.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306
\r
11221 + XTB=1.5 CJE=26.9p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300
\r
11222 + MJC=0.300 TF=700p TR=121n EG=1.12 )
\r
11224 *SRC=BC858C;DI_BC858C;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs
\r\r
11225 .MODEL DI_BC858C PNP (IS=10.2f NF=1.00 BF=1.09k VAF=98.6
\r\r
11226 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00
\r\r
11227 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286
\r\r
11228 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300
\r\r
11229 + MJC=0.300 TF=587p TR=95.0n EG=1.12 )
\r
11231 *SRC=BC858CW;DI_BC858CW;BJTs PNP; Si; 30.0V 0.100A 250MHz Diodes Inc. BJTs
\r\r
11232 .MODEL DI_BC858CW PNP (IS=10.2f NF=1.00 BF=1.09k VAF=98.6
\r\r
11233 + IKF=36.4m ISE=1.24p NE=2.00 BR=4.00 NR=1.00
\r\r
11234 + VAR=20.0 IKR=90.0m RE=0.715 RB=2.86 RC=0.286
\r\r
11235 + XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=7.80p VJC=0.300
\r\r
11236 + MJC=0.300 TF=587p TR=95.0n EG=1.12 )
\r
11238 *SRC=DMMT3904W;DI_DMMT3904W;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes
\r
11239 Inc. Matched Transistor
\r
11240 .MODEL DI_DMMT3904W NPN (IS=20.3f NF=1.00 BF=274 VAF=114
\r
11241 + IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00
\r
11242 + VAR=24.0 IKR=90.0m RE=0.657 RB=2.63 RC=0.263
\r
11243 + XTB=1.5 CJE=8.29p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300
\r
11244 + MJC=0.300 TF=426p TR=71.3n EG=1.12 )
\r
11246 *****************************************************************************************************************************************
\r
11247 *SRC=DMMT3906;DI_DMMT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. Matched BJTs - Single device of dual
\r
11248 .MODEL DI_DMMT3906 PNP (IS=20.3f NF=1.00 BF=437 VAF=114
\r
11249 + IKF=44.6m ISE=6.81p NE=2.00 BR=4.00 NR=1.00
\r
11250 + VAR=20.0 IKR=0.120 RE=1.16 RB=4.63 RC=0.463
\r
11251 + XTB=1.5 CJE=23.5p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300
\r
11252 + MJC=0.300 TF=504p TR=94.3n EG=1.12 )
\r
11253 *****************************************************************************************************************************************
\r
11255 *SRC=DMMT3906W;DI_DMMT3906W;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes, Inc. PNP
\r
11256 .MODEL DI_DMMT3906W PNP (IS=20.3f NF=1.00 BF=274 VAF=114
\r
11257 + IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00
\r
11258 + VAR=20.0 IKR=90.0m RE=1.01 RB=4.03 RC=0.403
\r
11259 + XTB=1.5 CJE=12.1p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300
\r
11260 + MJC=0.300 TF=531p TR=85.6n EG=1.12 )
\r
11262 *SRC=DMMT5551;DI_DMMT5551;BJTs NPN; Si; 160V 0.200A 150MHz Diodes Inc. Matched BJTs - Single device of dual
\r\r
11263 .MODEL DI_DMMT5551 NPN (IS=15.4f NF=1.00 BF=342 VAF=228
\r\r
11264 + IKF=42.5m ISE=5.27p NE=2.00 BR=4.00 NR=1.00
\r\r
11265 + VAR=24.0 IKR=0.105 RE=0.257 RB=1.03 RC=0.103
\r\r
11266 + XTB=1.5 CJE=52.0p VJE=1.10 MJE=0.500 CJC=16.8p VJC=0.300
\r\r
11267 + MJC=0.300 TF=873p TR=163n EG=1.12 )
\r
11269 *SRC=IMT4;DI_IMT4;BJTs PNP; Si; 120V 50.0mA 200MHz Diodes Inc.
\r
11271 .MODEL DI_IMT4 PNP (IS=12.8f NF=1.00 BF=513 VAF=197
\r
11272 + IKF=30.4m ISE=2.70p NE=2.00 BR=4.00 NR=1.00
\r
11273 + VAR=20.0 IKR=75.0m RE=1.43 RB=5.72 RC=0.572
\r
11274 + XTB=1.5 CJE=19.1p VJE=1.10 MJE=0.500 CJC=6.15p VJC=0.300
\r
11275 + MJC=0.300 TF=710p TR=121n EG=1.12 )
\r
11277 *SRC=IMX8;DI_IMX8;BJTs NPN; Si; 120V 50.0mA 300MHz Diodes Inc.
\r
11279 .MODEL DI_IMX8 NPN (IS=14.6f NF=1.00 BF=581 VAF=197
\r
11280 + IKF=30.4m ISE=2.54p NE=2.00 BR=4.00 NR=1.00
\r
11281 + VAR=20.0 IKR=75.0m RE=0.830 RB=3.32 RC=0.332
\r
11282 + XTB=1.5 CJE=12.5p VJE=1.10 MJE=0.500 CJC=4.02p VJC=0.300
\r
11283 + MJC=0.300 TF=475p TR=80.1n EG=1.12 )
\r
11285 *SRC=MMBT123S;DI_MMBT123S;BJTs NPN; Si; 18.0V 1.00A 100MHz Diodes Inc.
\r
11287 .MODEL DI_MMBT123S NPN (IS=102f NF=1.00 BF=1.09k VAF=76.4
\r
11288 + IKF=0.425 ISE=13.4p NE=2.00 BR=4.00 NR=1.00
\r
11289 + VAR=20.0 IKR=1.05 RE=0.181 RB=0.726 RC=72.6m
\r
11290 + XTB=1.5 CJE=71.7p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 MJC=0.300
\r
11291 + TF=1.55n TR=238n EG=1.12 )
\r
11293 *SRC=MMBT2222A;DI_MMBT2222A;BJTs NPN; Si; 40.0V 0.600A 200MHz Diodes Inc. Transistor
\r
11294 .MODEL DI_MMBT2222A NPN (IS=25.4f NF=1.00 BF=274 VAF=114
\r
11295 + IKF=0.121 ISE=14.3p NE=2.00 BR=4.00 NR=1.00
\r
11296 + VAR=24.0 IKR=0.300 RE=0.219 RB=0.877 RC=87.7m
\r
11297 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300
\r
11298 + MJC=0.300 TF=622p TR=124n EG=1.12 )
\r
11300 *SRC=MMBT2222AT;DI_MMBT2222AT;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes
\r
11302 .MODEL DI_MMBT2222AT NPN (IS=60.4f NF=1.00 BF=301 VAF=114
\r
11303 + IKF=66.8m ISE=14.8p NE=2.00 BR=4.00 NR=1.00
\r
11304 + VAR=24.0 IKR=0.165 RE=0.261 RB=1.04 RC=0.104
\r
11305 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300 MJC=0.300
\r
11306 + TF=491p TR=82.1n EG=1.12 )
\r
11308 *SRC=MMBT2907A;DI_MMBT2907A;BJTs PNP; Si; 60.0V 0.600A 200MHz Diodes Inc. Transistor
\r
11309 .MODEL DI_MMBT2907A PNP (IS=60.7f NF=1.00 BF=312 VAF=139
\r
11310 + IKF=0.219 ISE=26.0p NE=2.00 BR=4.00 NR=1.00
\r
11311 + VAR=20.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m
\r
11312 + XTB=1.5 CJE=50.4p VJE=1.10 MJE=0.500 CJC=23.1p VJC=0.300
\r
11313 + MJC=0.300 TF=758p TR=123n EG=1.12 )
\r
11315 *SRC=MMBT2907AT;DI_MMBT2907AT;BJTs PNP; Si; 60.0V 0.500A 300MHz Diodes Inc. BJTs
\r.MODEL DI_MMBT2907AT PNP (IS=50.0f NF=1.00 BF=410 VAF=139
\r+ IKF=0.182 ISE=16.4p NE=2.00 BR=4.00 NR=1.00
\r+ VAR=20.0 IKR=0.450 RE=0.343 RB=1.37 RC=0.137
\r+ XTB=1.5 CJE=34.9p VJE=1.10 MJE=0.500 CJC=14.7p VJC=0.300
\r+ MJC=0.300 TF=484p TR=29.9n EG=1.12 )
\r
11317 *SRC=MMBT3904;DI_MMBT3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. NPN Transistor
\r
11318 .MODEL DI_MMBT3904 NPN (IS=48.3f NF=1.00 BF=410 VAF=114
\r
11319 + IKF=0.121 ISE=13.1p NE=2.00 BR=4.00 NR=1.00
\r
11320 + VAR=24.0 IKR=0.300 RE=2.63 RB=10.5 RC=1.05
\r
11321 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=8.70p VJC=0.300
\r
11322 + MJC=0.300 TF=440p TR=74.7n EG=1.12 )
\r
11324 *SRC=MMBT3904T;DI_MMBT3904T;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes
\r
11326 .MODEL DI_MMBT3904T NPN (IS=20.2f NF=1.00 BF=410 VAF=114
\r
11327 + IKF=30.4m ISE=4.25p NE=2.00 BR=4.00 NR=1.00
\r
11328 + VAR=24.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283
\r
11329 + XTB=1.5 CJE=8.92p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300
\r
11330 + TF=383p TR=69.9n EG=1.12 )
\r
11332 *SRC=MMBT3906;DI_MMBT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. Transistor
\r
11333 .MODEL DI_MMBT3906 PNP (IS=20.3f NF=1.00 BF=192 VAF=114
\r
11334 + IKF=60.7m ISE=12.9p NE=2.00 BR=4.00 NR=1.00
\r
11335 + VAR=20.0 IKR=0.150 RE=1.16 RB=4.63 RC=0.463
\r
11336 + XTB=1.5 CJE=7.60p VJE=1.10 MJE=0.500 CJC=6.52p VJC=0.300
\r
11337 + MJC=0.300 TF=589p TR=98.4n EG=1.12 )
\r
11339 *SRC=MMBT3906T;DI_MMBT3906T;BJTs PNP; Si; 40.0V 0.200A 257MHz Didoes
\r
11341 .MODEL DI_MMBT3906T NPN (IS=7.21e-016 NF=1.00 BF=410 VAF=114
\r
11342 + IKF=60.7m ISE=1.13p NE=2.00 BR=4.00 NR=1.00
\r
11343 + VAR=20.0 IKR=0.150 RE=1.21 RB=4.83 RC=0.483
\r
11344 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=6.63p VJC=0.300 MJC=0.300
\r
11345 + TF=571p TR=84.1n EG=1.12 )
\r
11347 *SRC=MMBT4124;DI_MMBT4124;BJTs NPN; Si; 30.0V 0.200A 347MHz Diodes Inc. NPN Transistor
\r\r
11348 .MODEL DI_MMBT4124 NPN (IS=20.7f NF=1.00 BF=492 VAF=98.6
\r\r
11349 + IKF=72.9m ISE=5.54p NE=2.00 BR=4.00 NR=1.00
\r\r
11350 + VAR=20.0 IKR=0.180 RE=2.63 RB=10.5 RC=1.05
\r\r
11351 + XTB=1.5 CJE=9.65p VJE=1.10 MJE=0.500 CJC=9.47p VJC=0.300
\r\r
11352 + MJC=0.300 TF=415p TR=69.8n EG=1.12 )
\r\r
11354 *SRC=MMBT4126;DI_MMBT4126;BJTs PNP; Si; 25.0V 0.200A 257MHz Diodes Inc. Transistor
\r\r
11355 .MODEL DI_MMBT4126 PNP (IS=20.3f NF=1.00 BF=598 VAF=90.0
\r\r
11356 + IKF=72.9m ISE=4.52p NE=2.00 BR=4.00 NR=1.00
\r\r
11357 + VAR=16.0 IKR=0.180 RE=0.257 RB=1.03 RC=0.103
\r\r
11358 + XTB=1.5 CJE=13.8p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300
\r\r
11359 + MJC=0.300 TF=569p TR=93.4n EG=1.12 )
\r
11361 *SRC=MMBT4126;DI_MMBT4126;BJTs PNP; Si; 25.0V 0.200A 257MHz Diodes Inc. Transistor
\r
11362 .MODEL DI_MMBT4126 PNP (IS=20.3f NF=1.00 BF=598 VAF=90.0
\r
11363 + IKF=72.9m ISE=4.52p NE=2.00 BR=4.00 NR=1.00
\r
11364 + VAR=16.0 IKR=0.180 RE=0.257 RB=1.03 RC=0.103
\r
11365 + XTB=1.5 CJE=13.8p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300
\r
11366 + MJC=0.300 TF=569p TR=93.4n EG=1.12 )
\r
11368 *SRC=MMBT4401;DI_MMBT4401;BJTs NPN; Si; 40.0V 0.600A 200MHz Diodes, Inc. transistor
\r
11369 .MODEL DI_MMBT4401 NPN (IS=60.9f NF=1.00 BF=410 VAF=114
\r
11370 + IKF=0.364 ISE=25.5p NE=2.00 BR=4.00 NR=1.00
\r
11371 + VAR=24.0 IKR=0.900 RE=0.713 RB=2.85 RC=0.285
\r
11372 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300
\r
11373 + MJC=0.300 TF=717p TR=121n EG=1.12 )
\r
11375 *SRC=MMBT4401T;DI_MMBT4401T;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes
\r
11377 .MODEL DI_MMBT4401T NPN (IS=1.27p NF=1.00 BF=410 VAF=114
\r
11378 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00
\r
11379 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104
\r
11380 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300 MJC=0.300
\r
11381 + TF=533p TR=84.1n EG=1.12 )
\r
11383 *SRC=MMBT4403;DI_MMBT4403;BJTs PNP; Si; 40.0V 0.600A 300MHz Diodes Inc. Transistor
\r
11384 .MODEL DI_MMBT4403 PNP (IS=26.9f NF=1.00 BF=274 VAF=114
\r
11385 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00
\r
11386 + VAR=20.0 IKR=0.750 RE=0.263 RB=1.05 RC=0.105
\r
11387 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=24.6p VJC=0.300
\r
11388 + MJC=0.300 TF=500p TR=82.4n EG=1.12 )
\r
11390 *****************************************************************************************************************************************
\r
11391 *SRC=MMBT4403T;DI_MMBT4403T;BJTs PNP; Si; 40.0V 0.600A 200MHz Diodes Inc. BJTs
\r
11392 .MODEL DI_MMBT4403T PNP (IS=60.4f NF=1.00 BF=410 VAF=114
\r
11393 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00
\r
11394 + VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104
\r
11395 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300
\r
11396 + MJC=0.300 TF=667p TR=84.1n EG=1.12 )
\r
11397 *****************************************************************************************************************************************
\r
11399 *SRC=MMBT5401;DI_MMBT5401;BJTs PNP; Si; 150V 0.200A 300MHz Diodes Inc.
\r
11401 .MODEL DI_MMBT5401 PNP (IS=20.3f NF=1.00 BF=328 VAF=220
\r
11402 + IKF=72.9m ISE=8.24p NE=2.00 BR=4.00 NR=1.00
\r
11403 + VAR=20.0 IKR=0.180 RE=0.257 RB=1.03 RC=0.103
\r
11404 + XTB=1.5 CJE=54.3p VJE=1.10 MJE=0.500 CJC=17.5p VJC=0.300
\r
11405 + MJC=0.300 TF=315p TR=81.7n EG=1.12 )
\r
11407 *SRC=MMBT5551;DI_MMBT5551;BJTs NPN; Si; 160V 0.200A 130MHz Diodes Inc.
\r
11409 .MODEL DI_MMBT5551 NPN (IS=20.2f NF=1.00 BF=219 VAF=228
\r
11410 + IKF=36.4m ISE=8.72p NE=2.00 BR=4.00 NR=1.00
\r
11411 + VAR=24.0 IKR=90.0m RE=0.257 RB=1.03 RC=0.103
\r
11412 + XTB=1.5 CJE=27.9p VJE=1.10 MJE=0.500 CJC=8.99p VJC=0.300 MJC=0.300
\r
11413 + TF=1.13n TR=193n EG=1.12 )
\r
11415 *SRC=MMBTA05;DI_MMBTA05;BJTs NPN; Si; 60.0V 0.500A 219MHz Diodes Inc.
\r
11417 .MODEL DI_MMBTA05 NPN (IS=51.3f NF=1.00 BF=547 VAF=139
\r
11418 + IKF=0.146 ISE=11.1p NE=2.00 BR=4.00 NR=1.00
\r
11419 + VAR=16.0 IKR=0.360 RE=0.223 RB=0.892 RC=89.2m
\r
11420 + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 MJC=0.300
\r
11421 + TF=631p TR=110n EG=1.12 )
\r
11423 *SRC=MMBTA06;DI_MMBTA06;BJTs NPN; Si; 80.0V 0.500A 219MHz Diodes Inc. Transistor
\r
11424 .MODEL DI_MMBTA06 NPN (IS=50.8f NF=1.00 BF=479 VAF=161
\r
11425 + IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00
\r
11426 + VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m
\r
11427 + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300
\r
11428 + MJC=0.300 TF=576p TR=110n EG=1.12 )
\r
11430 *SRC=MMBTA42;DI_MMBTA42;BJTs NPN; Si; 300V 0.500A 219MHz Diodes Inc. NPN Transistor
\r
11431 .MODEL DI_MMBTA42 NPN (IS=51.0f NF=1.00 BF=194 VAF=312
\r
11432 + IKF=0.182 ISE=34.9p NE=2.00 BR=4.00 NR=1.00
\r
11433 + VAR=24.0 IKR=0.450 RE=11.6 RB=46.3 RC=4.63
\r
11434 + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300
\r
11435 + MJC=0.300 TF=481p TR=115n EG=1.12 )
\r
11437 *SRC=MMBTA55;DI_MMBTA55;BJTs PNP; Si; 60.0V 0.500A 163MHz Diodes Inc. Transistor
\r
11438 .MODEL DI_MMBTA55 PNP (IS=50.8f NF=1.00 BF=479 VAF=139
\r
11439 + IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00
\r
11440 + VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m
\r
11441 + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300
\r
11442 + MJC=0.300 TF=660p TR=149n EG=1.12 )
\r
11444 *SRC=MMBTA56;DI_MMBTA56;BJTs PNP; Si; 80.0V 0.500A 163MHz Diodes Inc.
\r
11446 .MODEL DI_MMBTA56 PNP (IS=50.8f NF=1.00 BF=479 VAF=161
\r
11447 + IKF=91.1m ISE=9.99p NE=2.00 BR=4.00 NR=1.00
\r
11448 + VAR=16.0 IKR=0.225 RE=0.103 RB=0.412 RC=41.2m
\r
11449 + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300
\r
11450 + MJC=0.300 TF=660p TR=149n EG=1.12 )
\r
11452 *SRC=MMBTA92;DI_MMBTA92;BJTs PNP; Si; 300V 0.500A 60.0MHz Diodes Inc.
\r
11454 .MODEL DI_MMBTA92 PNP (IS=177f NF=1.00 BF=239 VAF=312
\r
11455 + IKF=72.9m ISE=33.4p NE=2.00 BR=4.00 NR=1.00
\r
11456 + VAR=20.0 IKR=0.180 RE=1.16 RB=4.63 RC=0.463
\r
11457 + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 MJC=0.300
\r
11458 + TF=2.18n TR=415n EG=1.12 )
\r
11460 *SRC=MMBTH10;DI_MMBTH10;BJTs NPN; Si; 25.0V 50.0mA 1.00kMHz Diodes Inc. Transistor
\r
11461 .MODEL DI_MMBTH10 NPN (IS=1.26e-016 NF=1.00 BF=95.8 VAF=90.0
\r
11462 + IKF=24.3m ISE=1.28p NE=2.00 BR=4.00 NR=1.00
\r
11463 + VAR=12.0 IKR=60.0m RE=1.51 RB=6.05 RC=0.605
\r
11464 + XTB=1.5 CJE=6.27p VJE=1.10 MJE=0.500 CJC=2.02p VJC=0.300
\r
11465 + MJC=0.300 TF=130p TR=27.4n EG=1.12 )
\r
11467 *SRC=MMBTH24;DI_MMBTH24;BJTs NPN; Si; 40.0V 50.0mA 1.00kMHz Diodes Inc. Transistor
\r
11468 .MODEL DI_MMBTH24 NPN (IS=1.26e-016 NF=1.00 BF=95.8 VAF=114
\r
11469 + IKF=24.3m ISE=1.28p NE=2.00 BR=4.00 NR=1.00
\r
11470 + VAR=16.0 IKR=60.0m RE=1.51 RB=6.05 RC=0.605
\r
11471 + XTB=1.5 CJE=6.27p VJE=1.10 MJE=0.500 CJC=2.02p VJC=0.300
\r
11472 + MJC=0.300 TF=130p TR=27.4n EG=1.12 )
\r
11474 F=496p TR=81.1n EG=1.12 )
\r
11476 *****************************************************************************************************************************************
\r
11477 *SRC=MMDT2227;DI_MMDT2227_NPN;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary
\r
11478 .MODEL DI_MMDT2227_NPN NPN (IS=61.0f NF=1.00 BF=410 VAF=114
\r
11479 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00
\r
11480 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108
\r
11481 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300
\r
11482 + MJC=0.300 TF=496p TR=81.1n EG=1.12 )
\r
11484 *SRC=MMDT2227;DI_MMDT2227_PNP;BJTs PNP; Si; 60.0V 0.600A 300MHz Diodes Inc. BJTs - Complementary
\r
11485 .MODEL DI_MMDT2227_PNP PNP (IS=61.2f NF=1.00 BF=410 VAF=139
\r
11486 + IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00
\r
11487 + VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144
\r
11488 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300
\r
11489 + MJC=0.300 TF=491p TR=81.1n EG=1.12 )
\r
11490 *****************************************************************************************************************************************
\r
11492 *****************************************************************************************************************************************
\r
11493 *SRC=MMDT2907A;DI_MMDT2907A;BJTs PNP; Si; 60.0V 0.600A 300MHz Diodes Inc. BJTs - Single device of dual
\r
11494 .MODEL DI_MMDT2907A PNP (IS=61.2f NF=1.00 BF=410 VAF=139
\r
11495 + IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00
\r
11496 + VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144
\r
11497 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300
\r
11498 + MJC=0.300 TF=491p TR=81.1n EG=1.12 )
\r
11499 *****************************************************************************************************************************************
\r
11501 *SRC=MMDT3904;DI_MMDT3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes
\r
11502 Inc. BJTs - Single device of dual
\r
11503 .MODEL DI_MMDT3904 NPN (IS=5.81e-016 NF=1.00 BF=410 VAF=114
\r
11504 + IKF=0.304 ISE=2.28p NE=2.00 BR=4.00 NR=1.00
\r
11505 + VAR=24.0 IKR=0.750 RE=0.707 RB=2.83 RC=0.283
\r
11506 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=6.86p VJC=0.300 MJC=0.300
\r
11507 + TF=450p TR=70.2n EG=1.12 )
\r
11509 *SRC=MMDT3906;DI_MMDT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes
\r
11510 Inc. BJTs - Single device of dual
\r
11511 .MODEL DI_MMDT3906 PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114
\r
11512 + IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00
\r
11513 + VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483
\r
11514 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300 MJC=0.300
\r
11515 + TF=558p TR=84.1n EG=1.12 )
\r
11517 *****************************************************************************************************************************************
\r
11518 *SRC=MMDT3946;DI_MMDT3946_NPN;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs - Complementary
\r
11519 .MODEL DI_MMDT3946_NPN NPN (IS=5.81e-016 NF=1.00 BF=410 VAF=114
\r
11520 + IKF=0.304 ISE=2.28p NE=2.00 BR=4.00 NR=1.00
\r
11521 + VAR=24.0 IKR=0.750 RE=0.707 RB=2.83 RC=0.283
\r
11522 + XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=6.86p VJC=0.300
\r
11523 + MJC=0.300 TF=450p TR=70.2n EG=1.12 )
\r
11525 *SRC=MMDT3946;DI_MMDT3946_PNP;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. BJTs - Complementary
\r
11526 .MODEL DI_MMDT3946_PNP PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114
\r
11527 + IKF=48.6m ISE=1.01p NE=2.00 BR=4.00 NR=1.00
\r
11528 + VAR=20.0 IKR=0.120 RE=1.21 RB=4.83 RC=0.483
\r
11529 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=7.57p VJC=0.300
\r
11530 + MJC=0.300 TF=558p TR=84.1n EG=1.12 )
\r
11531 *****************************************************************************************************************************************
\r
11533 *SRC=MMDT4124;DI_MMDT4124;BJTs NPN; Si; 25.0V 0.200A 347MHz Diodes
\r
11534 Inc. BTJs - Single device of dual
\r
11535 .MODEL DI_MMDT4124 NPN (IS=5.81e-016 NF=1.00 BF=492 VAF=90.0
\r
11536 + IKF=30.4m ISE=600f NE=2.00 BR=4.00 NR=1.00
\r
11537 + VAR=20.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283
\r
11538 + XTB=1.5 CJE=7.96p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300
\r
11539 + TF=386p TR=69.8n EG=1.12 )
\r
11541 *SRC=MMDT4126;DI_MMDT4126;BJTs PNP; Si; 25.0V 0.200A 257MHz Diodes
\r
11542 Inc. BTJs - Single device of dual
\r
11543 .MODEL DI_MMDT4126 PNP (IS=7.06e-016 NF=1.00 BF=492 VAF=90.0
\r
11544 + IKF=60.7m ISE=935f NE=2.00 BR=4.00 NR=1.00
\r
11545 + VAR=16.0 IKR=0.150 RE=1.16 RB=4.63 RC=0.463
\r
11546 + XTB=1.5 CJE=7.24p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300
\r
11547 + TF=585p TR=94.0n EG=1.12 )
\r
11549 *SRC=MMBT4124;DI_MMBT4124;BJTs NPN; Si; 30.0V 0.200A 347MHz Diodes Inc. NPN Transistor
\r
11550 .MODEL DI_MMBT4124 NPN (IS=20.7f NF=1.00 BF=492 VAF=98.6
\r
11551 + IKF=72.9m ISE=5.54p NE=2.00 BR=4.00 NR=1.00
\r
11552 + VAR=20.0 IKR=0.180 RE=2.63 RB=10.5 RC=1.05
\r
11553 + XTB=1.5 CJE=9.65p VJE=1.10 MJE=0.500 CJC=9.47p VJC=0.300
\r
11554 + MJC=0.300 TF=415p TR=69.8n EG=1.12 )
\r
11556 *SRC=MMBT4126;DI_MMBT4126;BJTs PNP; Si; 25.0V 0.200A 257MHz Diodes Inc. Transistor
\r
11557 .MODEL DI_MMBT4126 PNP (IS=20.3f NF=1.00 BF=598 VAF=90.0
\r
11558 + IKF=72.9m ISE=4.52p NE=2.00 BR=4.00 NR=1.00
\r
11559 + VAR=16.0 IKR=0.180 RE=0.257 RB=1.03 RC=0.103
\r
11560 + XTB=1.5 CJE=13.8p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300
\r
11561 + MJC=0.300 TF=569p TR=93.4n EG=1.12 )
\r
11563 *SRC=MMDT4401;DI_MMDT4401;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes
\r
11564 Inc. BJTs - Single device of dual
\r
11565 .MODEL DI_MMDT4401 NPN (IS=60.7f NF=1.00 BF=410 VAF=114
\r
11566 + IKF=0.219 ISE=19.7p NE=2.00 BR=4.00 NR=1.00
\r
11567 + VAR=24.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m
\r
11568 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300 MJC=0.300
\r
11569 + TF=539p TR=84.1n EG=1.12 )
\r
11571 *SRC=MMDT4403;DI_MMDT4403;BJTs PNP; Si; 40.0V 0.600A 275MHz Diodes
\r
11572 Inc. BJTs - Single device of dual
\r
11573 .MODEL DI_MMDT4403 PNP (IS=61.0f NF=1.00 BF=410 VAF=114
\r
11574 + IKF=0.340 ISE=24.7p NE=2.00 BR=4.00 NR=1.00
\r
11575 + VAR=20.0 IKR=0.840 RE=0.269 RB=1.08 RC=0.108
\r
11576 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 MJC=0.300
\r
11577 + TF=516p TR=84.1n EG=1.12 )
\r
11579 *****************************************************************************************************************************************
\r
11580 *SRC=MMDT4413;DI_MMDT4413_NPN;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs - Complementaryl
\r
11581 .MODEL DI_MMDT4413_NPN NPN (IS=60.7f NF=1.00 BF=410 VAF=114
\r
11582 + IKF=0.219 ISE=19.7p NE=2.00 BR=4.00 NR=1.00
\r
11583 + VAR=24.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m
\r
11584 + XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300
\r
11585 + MJC=0.300 TF=539p TR=84.1n EG=1.12 )
\r
11587 *SRC=MMDT4413;DI_MMDT4413_PNP;BJTs PNP; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs - Complementary
\r
11588 .MODEL DI_MMDT4413_PNP PNP (IS=61.0f NF=1.00 BF=410 VAF=114
\r
11589 + IKF=0.340 ISE=24.7p NE=2.00 BR=4.00 NR=1.00
\r
11590 + VAR=20.0 IKR=0.840 RE=0.269 RB=1.08 RC=0.108
\r
11591 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300
\r
11592 + MJC=0.300 TF=516p TR=84.1n EG=1.12 )
\r
11593 *****************************************************************************************************************************************
\r
11595 *SRC=MMDT5401;DI_MMDT5401;BJTs PNP; Si; 150V 0.200A 257MHz Diodes Inc. BJTs - Single device of dual
\r\r
11596 .MODEL DI_MMDT5401 PNP (IS=6.83f NF=1.00 BF=328 VAF=220
\r\r
11597 + IKF=72.9m ISE=4.78p NE=2.00 BR=4.00 NR=1.00
\r\r
11598 + VAR=20.0 IKR=0.180 RE=0.157 RB=0.630 RC=63.0m
\r\r
11599 + XTB=1.5 CJE=52.0p VJE=1.10 MJE=0.500 CJC=16.8p VJC=0.300
\r\r
11600 + MJC=0.300 TF=450p TR=95.4n EG=1.12 )
\r
11602 *SRC=MMDT5551;DI_MMDT5551;BJTs NPN; Si; 160V 0.200A 130MHz Diodes Inc.
\r
11603 Transistor - single device of dual
\r
11604 .MODEL DI_MMDT5551 NPN (IS=20.2f NF=1.00 BF=219 VAF=228
\r
11605 + IKF=36.4m ISE=8.72p NE=2.00 BR=4.00 NR=1.00
\r
11606 + VAR=24.0 IKR=90.0m RE=0.257 RB=1.03 RC=0.103
\r
11607 + XTB=1.5 CJE=27.9p VJE=1.10 MJE=0.500 CJC=8.99p VJC=0.300 MJC=0.300
\r
11608 + TF=1.13n TR=193n EG=1.12 )
\r
11610 *SRC=MMST2222A;DI_MMST2222A;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes
\r
11612 .MODEL DI_MMST2222A NPN (IS=61.0f NF=1.00 BF=410 VAF=114
\r
11613 + IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00
\r
11614 + VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108
\r
11615 + XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=15.0p VJC=0.300 MJC=0.300
\r
11616 + TF=496p TR=84.1n EG=1.12 )
\r
11618 *SRC=MMST2907A;DI_MMST2907A;BJTs PNP; Si; 60.0V 0.600A 275MHz Diodes
\r
11620 .MODEL DI_MMST2907A PNP (IS=59.9f NF=1.00 BF=410 VAF=139
\r
11621 + IKF=0.273 ISE=21.9p NE=2.00 BR=4.00 NR=1.00
\r
11622 + VAR=20.0 IKR=0.675 RE=0.344 RB=1.38 RC=0.138
\r
11623 + XTB=1.5 CJE=30.2p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 MJC=0.300
\r
11624 + TF=513p TR=29.9n EG=1.12 )
\r
11626 *SRC=MMST3904;DI_MMST3904;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes
\r
11628 .MODEL DI_MMST3904 NPN (IS=3.95e-016 NF=1.00 BF=410 VAF=114
\r
11629 + IKF=30.4m ISE=593f NE=2.00 BR=4.00 NR=1.00
\r
11630 + VAR=24.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283
\r
11631 + XTB=1.5 CJE=9.95p VJE=1.10 MJE=0.500 CJC=8.99p VJC=0.300 MJC=0.300
\r
11632 + TF=367p TR=70.2n EG=1.12 )
\r
11634 *SRC=MMST3906;DI_MMST3906;BJTs PNP; Si; 40.0V 0.200A 347MHz Diodes
\r
11636 .MODEL DI_MMST3906 PNP (IS=7.06e-016 NF=1.00 BF=410 VAF=114
\r
11637 + IKF=60.7m ISE=1.12p NE=2.00 BR=4.00 NR=1.00
\r
11638 + VAR=20.0 IKR=0.150 RE=1.16 RB=4.63 RC=0.463
\r
11639 + XTB=1.5 CJE=7.84p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300
\r
11640 + TF=422p TR=84.1n EG=1.12 )
\r
11642 *SRC=MMST4124;DI_MMST4124;BJTs NPN; Si; 25.0V 0.200A 347MHz Diodes
\r
11644 .MODEL DI_MMST4124 NPN (IS=5.81e-016 NF=1.00 BF=492 VAF=90.0
\r
11645 + IKF=30.4m ISE=600f NE=2.00 BR=4.00 NR=1.00
\r
11646 + VAR=20.0 IKR=75.0m RE=0.707 RB=2.83 RC=0.283
\r
11647 + XTB=1.5 CJE=7.84p VJE=1.10 MJE=0.500 CJC=7.10p VJC=0.300 MJC=0.300
\r
11648 + TF=387p TR=69.8n EG=1.12 )
\r
11650 *SRC=MMST4126;DI_MMST4126;BJTs PNP; Si; 25.0V 0.200A 257MHz Diodes
\r
11652 .MODEL DI_MMST4126 PNP (IS=7.06e-016 NF=1.00 BF=492 VAF=90.0
\r
11653 + IKF=48.6m ISE=836f NE=2.00 BR=4.00 NR=1.00
\r
11654 + VAR=16.0 IKR=0.120 RE=1.16 RB=4.63 RC=0.463
\r
11655 + XTB=1.5 CJE=7.24p VJE=1.10 MJE=0.500 CJC=6.86p VJC=0.300 MJC=0.300
\r
11656 + TF=576p TR=94.0n EG=1.12 )
\r
11658 *SRC=MMST4401;DI_MMST4401;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs
\r
11659 .MODEL DI_MMST4401 NPN (IS=1.27p NF=1.00 BF=410 VAF=114
\r
11660 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00
\r
11661 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104
\r
11662 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300
\r
11663 + MJC=0.300 TF=533p TR=84.1n EG=1.12 )
\r
11665 *SRC=MMST4403;DI_MMST4403;BJTs PNP; Si; 40.0V 0.600A 300MHz Diodes
\r
11667 .MODEL DI_MMST4403 PNP (IS=60.4f NF=1.00 BF=410 VAF=114
\r
11668 + IKF=0.334 ISE=24.3p NE=2.00 BR=4.00 NR=1.00
\r
11669 + VAR=20.0 IKR=0.825 RE=0.261 RB=1.04 RC=0.104
\r
11670 + XTB=1.5 CJE=31.4p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300 MJC=0.300
\r
11671 + TF=486p TR=81.1n EG=1.12 )
\r
11673 *SRC=MMST5401;DI_MMST5401;BJTs PNP; Si; 150V 0.200A 257MHz Diodes Inc. BJTs - Single device of dual
\r\r
11674 .MODEL DI_MMST5401 PNP (IS=6.83f NF=1.00 BF=328 VAF=220
\r\r
11675 + IKF=72.9m ISE=4.78p NE=2.00 BR=4.00 NR=1.00
\r\r
11676 + VAR=20.0 IKR=0.180 RE=0.157 RB=0.630 RC=63.0m
\r\r
11677 + XTB=1.5 CJE=52.0p VJE=1.10 MJE=0.500 CJC=16.8p VJC=0.300
\r\r
11678 + MJC=0.300 TF=450p TR=95.4n EG=1.12 )
\r
11680 *SRC=MMST5551;DI_MMST5551;BJTs NPN; Si; 160V 0.200A 130MHz Diodes Inc.
\r
11682 .MODEL DI_MMST5551 NPN (IS=20.2f NF=1.00 BF=219 VAF=228
\r
11683 + IKF=36.4m ISE=8.72p NE=2.00 BR=4.00 NR=1.00
\r
11684 + VAR=24.0 IKR=90.0m RE=0.257 RB=1.03 RC=0.103
\r
11685 + XTB=1.5 CJE=27.9p VJE=1.10 MJE=0.500 CJC=8.99p VJC=0.300 MJC=0.300
\r
11686 + TF=1.13n TR=193n EG=1.12 )
\r
11688 *SRC=MMSTA05;DI_MMSTA05;BJTs NPN; Si; 60.0V 0.500A 219MHz Diodes Inc.
\r
11690 .MODEL DI_MMSTA05 NPN (IS=94.2f NF=1.00 BF=331 VAF=139
\r
11691 + IKF=0.146 ISE=24.9p NE=2.00 BR=4.00 NR=1.00
\r
11692 + VAR=16.0 IKR=0.360 RE=0.215 RB=0.860 RC=86.0m
\r
11693 + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 MJC=0.300
\r
11694 + TF=633p TR=112n EG=1.12 )
\r
11696 *SRC=MMSTA06;DI_MMSTA06;BJTs NPN; Si; 80.0V 0.500A 219MHz Diodes Inc.
\r
11698 .MODEL DI_MMSTA06 NPN (IS=94.2f NF=1.00 BF=301 VAF=161
\r
11699 + IKF=0.146 ISE=27.4p NE=2.00 BR=4.00 NR=1.00
\r
11700 + VAR=16.0 IKR=0.360 RE=0.215 RB=0.860 RC=86.0m
\r
11701 + XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300 MJC=0.300
\r
11702 + TF=633p TR=112n EG=1.12 )
\r
11704 *SRC=MMSTA42;DI_MMSTA42;BJTs NPN; Si; 300V 0.200A 347MHz Diodes Inc. BJTs
\r\r
11705 .MODEL DI_MMSTA42 NPN (IS=109f NF=1.00 BF=219 VAF=312
\r\r
11706 + IKF=0.425 ISE=69.3p NE=2.00 BR=4.00 NR=1.00
\r\r
11707 + VAR=24.0 IKR=1.05 RE=1.21 RB=4.86 RC=0.486
\r\r
11708 + XTB=1.5 CJE=32.9p VJE=1.10 MJE=0.500 CJC=10.6p VJC=0.300
\r\r
11709 + MJC=0.300 TF=441p TR=72.5n EG=1.12 )
\r
11711 *SRC=MMSTA55;DI_MMSTA55;BJTs PNP; Si; 60.0V 0.500A 70.0MHz Diodes Inc.
\r
11713 .MODEL DI_MMSTA55 PNP (IS=50.2f NF=1.00 BF=331 VAF=139
\r
11714 + IKF=0.182 ISE=20.3p NE=2.00 BR=4.00 NR=1.00
\r
11715 + VAR=16.0 IKR=0.450 RE=0.133 RB=0.532 RC=53.2m
\r
11716 + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 MJC=0.300
\r
11717 + TF=2.16n TR=350n EG=1.12 )
\r
11719 *SRC=MMSTA56;DI_MMSTA56;BJTs PNP; Si; 80.0V 0.500A 70.0MHz Diodes Inc.
\r
11721 .MODEL DI_MMSTA56 PNP (IS=50.2f NF=1.00 BF=331 VAF=161
\r
11722 + IKF=0.182 ISE=20.3p NE=2.00 BR=4.00 NR=1.00
\r
11723 + VAR=16.0 IKR=0.450 RE=0.133 RB=0.532 RC=53.2m
\r
11724 + XTB=1.5 CJE=125p VJE=1.10 MJE=0.500 CJC=40.2p VJC=0.300 MJC=0.300
\r
11725 + TF=2.16n TR=350n EG=1.12 )
\r
11727 *SRC=MMSTA92;DI_MMSTA92;BJTs PNP; Si; 300V 0.100A 60.0MHz Diodes Inc. BJTs
\r\r
11728 .MODEL DI_MMSTA92 PNP (IS=53.7f NF=1.00 BF=164 VAF=312
\r\r
11729 + IKF=66.8m ISE=25.7p NE=2.00 BR=4.00 NR=1.00
\r\r
11730 + VAR=20.0 IKR=0.165 RE=0.565 RB=2.26 RC=0.226
\r\r
11731 + XTB=1.5 CJE=52.0p VJE=1.10 MJE=0.500 CJC=16.8p VJC=0.300
\r\r
11732 + MJC=0.300 TF=2.46n TR=426n EG=1.12 )
\r
11734 *SRC=MMBT6427;DI_MMBT6427;BJTs NPN;Darlington;40.0V 0.500A Diodes Inc. Darlington Transistor
\r*SYM=DARBJTN
\r.SUBCKT DII_MMBT6427 col base emtr
\rQ1 col base eb QPWR .1
\rQ2 col eb emtr QPWR
\rD1 emtr col DSUB
\rD2 eb base DSUB
\r.MODEL QPWR NPN (IS=600f NF=1.00 BF=448 VAF=114
\r+ IKF=0.400 ISE=10.9p NE=2.00 BR=4.00 NR=1.00
\r+ VAR=48.0 IKR=0.600 RE=0.300 RB=1.20 RC=0.120
\r+ XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p
\r+ VJC=1.10 MJC=0.240 TF=1.30n TR=659n )
\r
11736 *SRC=MMBTA13;DI_MMBTA13;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. NPN Darlington
\r
11738 .SUBCKT DI_MMBTA13 col base emtr
\r
11739 Q1 col base eb QPWR .1
\r
11740 Q2 col eb emtr QPWR
\r
11741 D1 emtr col DSUB
\r
11743 .MODEL QPWR NPN (IS=360f NF=1.00 BF=134 VAF=98.6
\r
11744 + IKF=0.240 ISE=21.9p NE=2.00 BR=4.00 NR=1.00
\r
11745 + VAR=40.0 IKR=0.360 RE=4.00 RB=16.0 RC=1.60
\r
11746 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p
\r
11747 + VJC=1.10 MJC=0.240 TF=3.77n TR=617n )
\r
11748 .MODEL DSUB D( IS=360f N=1 RS=4.00 BV=30.0
\r
11749 + IBV=.001 CJO=13.9p TT=617n )
\r
11752 *SRC=MMBTA14;DI_MMBTA14;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor
\r\r
11754 .SUBCKT DI_MMBTA14 col base emtr
\r\r
11755 Q1 col base eb QPWR .1
\r\r
11756 Q2 col eb emtr QPWR
\r\r
11757 D1 emtr col DSUB
\r\r
11758 D2 eb base DSUB
\r\r
11759 .MODEL QPWR NPN (IS=360f NF=1.00 BF=141 VAF=98.6
\r\r
11760 + IKF=0.240 ISE=20.8p NE=2.00 BR=4.00 NR=1.00
\r\r
11761 + VAR=40.0 IKR=0.360 RE=0.333 RB=1.33 RC=0.133
\r\r
11762 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p
\r\r
11763 + VJC=1.10 MJC=0.240 TF=3.57n TR=614n )=0.133
\r\r
11764 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p
\r\r
11765 + VJC=1.10 MJC=0.240 TF=3.57n TR=614n )
\r\r
11766 .MODEL DSUB D( IS=360f N=1 RS=0.333 BV=30.0
\r\r
11767 + IBV=.001 CJO=13.9p TT=614n )
\r
11769 *SRC=MMBTA28;DI_MMBTA28;BJTs NPN;Darlington;80.0V 0.500A Diodes Inc. NPN Darlington
\r
11771 .SUBCKT DI_MMBTA28 col base emtr
\r
11772 Q1 col base eb QPWR .1
\r
11773 Q2 col eb emtr QPWR
\r
11774 D1 emtr col DSUB
\r
11776 .MODEL QPWR NPN (IS=600f NF=1.00 BF=134 VAF=161
\r
11777 + IKF=0.400 ISE=36.5p NE=2.00 BR=4.00 NR=1.00
\r
11778 + VAR=48.0 IKR=0.600 RE=0.500 RB=2.00 RC=0.200
\r
11779 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p
\r
11780 + VJC=1.10 MJC=0.240 TF=6.15n TR=1.01u )
\r
11781 .MODEL DSUB D( IS=600f N=1 RS=0.500 BV=80.0
\r
11782 + IBV=.001 CJO=13.9p TT=1.01u )
\r
11785 *SRC=MMBTA63;DI_MMBTA63;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor
\r*SYM=DARBJTP
\r.SUBCKT DII_MMBTA63 col base emtr
\rQ1 col base eb QPWR .1
\rQ2 col eb emtr QPWR
\rD1 col emtr DSUB
\rD2 base eb DSUB
\r.MODEL QPWR PNP (IS=600f NF=1.00 BF=100 VAF=98.6
\r+ IKF=0.400 ISE=49.0p NE=2.00 BR=4.00 NR=1.00
\r+ VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136
\r+ XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p
\r+ VJC=1.10 MJC=0.240 TF=5.05n TR=641n )
\r
11787 *SRC=MMBTA64;DI_MMBTA64;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor
\r*SYM=DARBJTP
\r.SUBCKT DII_MMBTA64 col base emtr
\rQ1 col base eb QPWR .1
\rQ2 col eb emtr QPWR
\rD1 col emtr DSUB
\rD2 base eb DSUB
\r.MODEL QPWR PNP (IS=600f NF=1.00 BF=141 VAF=98.6
\r+ IKF=0.400 ISE=34.6p NE=2.00 BR=4.00 NR=1.00
\r+ VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136
\r+ XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p
\r+ VJC=1.10 MJC=0.240 TF=3.57n TR=614n )
\r
11789 *SRC=MMST6427;DI_MMST6427;BJTs NPN;Darlington;40.0V 0.500A Diodes Inc. Darlington Transistor
\r*SYM=DARBJTN
\r.SUBCKT DII_MMST6427 col base emtr
\rQ1 col base eb QPWR .1
\rQ2 col eb emtr QPWR
\rD1 emtr col DSUB
\rD2 eb base DSUB
\r.MODEL QPWR NPN (IS=600f NF=1.00 BF=448 VAF=114
\r+ IKF=0.400 ISE=10.9p NE=2.00 BR=4.00 NR=1.00
\r+ VAR=48.0 IKR=0.600 RE=0.300 RB=1.20 RC=0.120
\r+ XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p
\r+ VJC=1.10 MJC=0.240 TF=1.30n TR=659n )
\r
11791 *SRC=MMSTA13;DI_MMSTA13;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor
\r*SYM=DARBJTN
\r.SUBCKT DI_MMSTA13 col base emtr
\rQ1 col base eb QPWR .1
\rQ2 col eb emtr QPWR
\rD1 emtr col DSUB
\rD2 eb base DSUB
\r.MODEL QPWR NPN (IS=360f NF=1.00 BF=100 VAF=98.6
\r+ IKF=0.240 ISE=29.4p NE=2.00 BR=4.00 NR=1.00
\r+ VAR=40.0 IKR=0.360 RE=0.333 RB=1.33 RC=0.133
\r+ XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p
\r+ VJC=1.10 MJC=0.240 TF=5.05n TR=641n )
\r
11793 *SRC=MMSTA14;DI_MMSTA14;BJTs NPN;Darlington;30.0V 0.300A Diodes Inc. Darlington Transistor
\r
11795 .SUBCKT DI_MMSTA14 col base emtr
\r
11796 Q1 col base eb QPWR .1
\r
11797 Q2 col eb emtr QPWR
\r
11800 .MODEL QPWR NPN (IS=360f NF=1.00 BF=141 VAF=98.6
\r
11801 + IKF=0.240 ISE=20.8p NE=2.00 BR=4.00 NR=1.00
\r
11802 + VAR=40.0 IKR=0.360 RE=0.333 RB=1.33 RC=0.133
\r
11803 + XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p
\r
11804 + VJC=1.10 MJC=0.240 TF=3.57n TR=614n )
\r
11806 *SRC=MMSTA63;DI_MMSTA63;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor
\r*SYM=DARBJTP
\r.SUBCKT DII_MMSTA63 col base emtr
\rQ1 col base eb QPWR .1
\rQ2 col eb emtr QPWR
\rD1 col emtr DSUB
\rD2 base eb DSUB
\r.MODEL QPWR PNP (IS=600f NF=1.00 BF=100 VAF=98.6
\r+ IKF=0.400 ISE=49.0p NE=2.00 BR=4.00 NR=1.00
\r+ VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136
\r+ XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p
\r+ VJC=1.10 MJC=0.240 TF=5.05n TR=641n )
\r
11808 *SRC=MMSTA64;DI_MMSTA64;BJTs PNP;Darlington;30.0V 0.500A Diodes Inc. Darlington Transistor
\r*SYM=DARBJTP
\r.SUBCKT DII_MMSTA64 col base emtr
\rQ1 col base eb QPWR .1
\rQ2 col eb emtr QPWR
\rD1 col emtr DSUB
\rD2 base eb DSUB
\r.MODEL QPWR PNP (IS=600f NF=1.00 BF=141 VAF=98.6
\r+ IKF=0.400 ISE=34.6p NE=2.00 BR=4.00 NR=1.00
\r+ VAR=40.0 IKR=0.600 RE=0.340 RB=1.36 RC=0.136
\r+ XTB=1.5 CJE=115p VJE=0.740 MJE=0.450 CJC=16.5p
\r+ VJC=1.10 MJC=0.240 TF=3.57n TR=614n )
\r
11810 ******************************************************************************************************************************************
\r
11811 Note: The following SPICE model is for the transistor element.
\r
11812 When applying this SPICE model to your circuit simulation be certain
\r
11813 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
11814 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
11817 *SRC=DCX114EH;DI_DCX114EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
11818 .MODEL DI_DCX114EH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
11819 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
11820 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
11821 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
11822 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
11823 ********************************************************************************************************************************
\r
11824 ***************************************************************************************************************************************
\r
11825 Note: The following SPICE model is for the transistor element.
\r
11826 When applying this SPICE model to your circuit simulation be certain
\r
11827 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
11828 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
11831 *SRC=DCX114EH;DI_DCX114EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
11832 .MODEL DI_DCX114EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
11833 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
11834 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
11835 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
11836 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
11838 ******************************************************************************************************************************************
\r
11839 Note: The following SPICE model is for the transistor element.
\r
11840 When applying this SPICE model to your circuit simulation be certain
\r
11841 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
11842 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
11845 *SRC=DCX114EK;DI_DCX114EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
11846 .MODEL DI_DCX114EK NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
11847 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
11848 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
11849 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
11850 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
11851 ********************************************************************************************************************************
\r
11852 ***************************************************************************************************************************************
\r
11853 Note: The following SPICE model is for the transistor element.
\r
11854 When applying this SPICE model to your circuit simulation be certain
\r
11855 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
11856 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
11859 *SRC=DCX114EK;DI_DCX114EK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
11860 .MODEL DI_DCX114EK NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
11861 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
11862 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
11863 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
11864 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
11866 ******************************************************************************************************************************************
\r
11867 Note: The following SPICE model is for the transistor element.
\r
11868 When applying this SPICE model to your circuit simulation be certain
\r
11869 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
11870 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
11873 *SRC=DCX123JU;DI_DCX123JU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
11874 .MODEL DI_DCX123JU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
11875 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
11876 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
11877 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
11878 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
11879 ********************************************************************************************************************************
\r
11880 ***************************************************************************************************************************************
\r
11881 Note: The following SPICE model is for the transistor element.
\r
11882 When applying this SPICE model to your circuit simulation be certain
\r
11883 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
11884 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
11887 *SRC=DCX123JU;DI_DCX123JU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
11888 .MODEL DI_DCX123JU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
11889 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
11890 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
11891 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
11892 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
11894 ******************************************************************************************************************************************
\r
11895 Note: The following SPICE model is for the transistor element.
\r
11896 When applying this SPICE model to your circuit simulation be certain
\r
11897 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
11898 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
11901 *SRC=DCX114TH;DI_DCX114TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
11902 .MODEL DI_DCX114TH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
11903 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
11904 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
11905 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
11906 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
11907 ********************************************************************************************************************************
\r
11908 ***************************************************************************************************************************************
\r
11909 Note: The following SPICE model is for the transistor element.
\r
11910 When applying this SPICE model to your circuit simulation be certain
\r
11911 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
11912 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
11915 *SRC=DCX114TH;DI_DCX114TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
11916 .MODEL DI_DCX114TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
11917 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
11918 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
11919 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
11920 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
11922 ******************************************************************************************************************************************
\r
11923 Note: The following SPICE model is for the transistor element.
\r
11924 When applying this SPICE model to your circuit simulation be certain
\r
11925 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
11926 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
11929 *SRC=DCX114TK;DI_DCX114TK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
11930 .MODEL DI_DCX114TK NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
11931 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
11932 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
11933 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
11934 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
11935 ********************************************************************************************************************************
\r
11936 ***************************************************************************************************************************************
\r
11937 Note: The following SPICE model is for the transistor element.
\r
11938 When applying this SPICE model to your circuit simulation be certain
\r
11939 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
11940 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
11943 *SRC=DCX114TK;DI_DCX114TK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
11944 .MODEL DI_DCX114TK NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
11945 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
11946 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
11947 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
11948 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
11950 ******************************************************************************************************************************************
\r
11951 Note: The following SPICE model is for the transistor element.
\r
11952 When applying this SPICE model to your circuit simulation be certain
\r
11953 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
11954 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
11957 *SRC=DCX114TU;DI_DCX114TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
11958 .MODEL DI_DCX114TU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
11959 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
11960 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
11961 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
11962 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
11963 ********************************************************************************************************************************
\r
11964 ***************************************************************************************************************************************
\r
11965 Note: The following SPICE model is for the transistor element.
\r
11966 When applying this SPICE model to your circuit simulation be certain
\r
11967 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
11968 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
11971 *SRC=DCX114TU;DI_DCX114TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
11972 .MODEL DI_DCX114TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
11973 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
11974 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
11975 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
11976 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
11978 ******************************************************************************************************************************************
\r
11979 Note: The following SPICE model is for the transistor element.
\r
11980 When applying this SPICE model to your circuit simulation be certain
\r
11981 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
11982 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
11985 *SRC=DCX114YH;DI_DCX114YH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
11986 .MODEL DI_DCX114YH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
11987 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
11988 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
11989 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
11990 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
11991 ********************************************************************************************************************************
\r
11992 ***************************************************************************************************************************************
\r
11993 Note: The following SPICE model is for the transistor element.
\r
11994 When applying this SPICE model to your circuit simulation be certain
\r
11995 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
11996 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
11999 *SRC=DCX114YH;DI_DCX114YH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12000 .MODEL DI_DCX114YH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12001 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12002 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12003 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12004 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
12006 ******************************************************************************************************************************************
\r
12007 Note: The following SPICE model is for the transistor element.
\r
12008 When applying this SPICE model to your circuit simulation be certain
\r
12009 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12010 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12013 *SRC=DCX114YK;DI_DCX114YK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12014 .MODEL DI_DCX114YK NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12015 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12016 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12017 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12018 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12019 ********************************************************************************************************************************
\r
12020 ***************************************************************************************************************************************
\r
12021 Note: The following SPICE model is for the transistor element.
\r
12022 When applying this SPICE model to your circuit simulation be certain
\r
12023 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12024 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12027 *SRC=DCX114YK;DI_DCX114YK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12028 .MODEL DI_DCX114YK NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12029 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12030 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12031 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12032 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
12034 ******************************************************************************************************************************************
\r
12035 Note: The following SPICE model is for the transistor element.
\r
12036 When applying this SPICE model to your circuit simulation be certain
\r
12037 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12038 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12041 *SRC=DCX114YU;DI_DCX114YU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12042 .MODEL DI_DCX114YU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12043 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12044 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12045 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12046 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12047 ********************************************************************************************************************************
\r
12048 ***************************************************************************************************************************************
\r
12049 Note: The following SPICE model is for the transistor element.
\r
12050 When applying this SPICE model to your circuit simulation be certain
\r
12051 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12052 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12055 *SRC=DCX114YU;DI_DCX114YU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12056 .MODEL DI_DCX114YU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12057 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12058 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12059 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12060 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
12062 ******************************************************************************************************************************************
\r
12063 Note: The following SPICE model is for the transistor element.
\r
12064 When applying this SPICE model to your circuit simulation be certain
\r
12065 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12066 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12069 *SRC=DCX122LH;DI_DCX122LH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12070 .MODEL DI_DCX122LH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12071 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12072 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12073 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12074 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12075 ********************************************************************************************************************************
\r
12076 ***************************************************************************************************************************************
\r
12077 Note: The following SPICE model is for the transistor element.
\r
12078 When applying this SPICE model to your circuit simulation be certain
\r
12079 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12080 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12083 *SRC=DCX122LH;DI_DCX122LH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12084 .MODEL DI_DCX122LH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12085 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12086 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12087 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12088 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
12090 ******************************************************************************************************************************************
\r
12091 Note: The following SPICE model is for the transistor element.
\r
12092 When applying this SPICE model to your circuit simulation be certain
\r
12093 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12094 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12097 *SRC=DCX122TH;DI_DCX122TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12098 .MODEL DI_DCX122TH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12099 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12100 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12101 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12102 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12103 ********************************************************************************************************************************
\r
12104 ***************************************************************************************************************************************
\r
12105 Note: The following SPICE model is for the transistor element.
\r
12106 When applying this SPICE model to your circuit simulation be certain
\r
12107 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12108 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12111 *SRC=DCX122TH;DI_DCX122TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12112 .MODEL DI_DCX122TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12113 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12114 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12115 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12116 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
12118 ******************************************************************************************************************************************
\r
12119 Note: The following SPICE model is for the transistor element.
\r
12120 When applying this SPICE model to your circuit simulation be certain
\r
12121 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12122 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12125 *SRC=DCX123JH;DI_DCX123JH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12126 .MODEL DI_DCX123JH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12127 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12128 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12129 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12130 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12131 ********************************************************************************************************************************
\r
12132 ***************************************************************************************************************************************
\r
12133 Note: The following SPICE model is for the transistor element.
\r
12134 When applying this SPICE model to your circuit simulation be certain
\r
12135 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12136 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12139 *SRC=DCX123JH;DI_DCX123JH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12140 .MODEL DI_DCX123JH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12141 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12142 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12143 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12144 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
12146 ******************************************************************************************************************************************
\r
12147 Note: The following SPICE model is for the transistor element.
\r
12148 When applying this SPICE model to your circuit simulation be certain
\r
12149 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12150 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12153 *SRC=DCX123JK;DI_DCX123JK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12154 .MODEL DI_DCX123JK NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12155 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12156 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12157 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12158 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12159 ********************************************************************************************************************************
\r
12160 ***************************************************************************************************************************************
\r
12161 Note: The following SPICE model is for the transistor element.
\r
12162 When applying this SPICE model to your circuit simulation be certain
\r
12163 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12164 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12167 *SRC=DCX123JK;DI_DCX123JK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12168 .MODEL DI_DCX123JK NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12169 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12170 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12171 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12172 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
12174 ******************************************************************************************************************************************
\r
12175 Note: The following SPICE model is for the transistor element.
\r
12176 When applying this SPICE model to your circuit simulation be certain
\r
12177 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12178 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12181 *SRC=DCX123JU;DI_DCX123JU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12182 .MODEL DI_DCX123JU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12183 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12184 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12185 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12186 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12187 ********************************************************************************************************************************
\r
12188 ***************************************************************************************************************************************
\r
12189 Note: The following SPICE model is for the transistor element.
\r
12190 When applying this SPICE model to your circuit simulation be certain
\r
12191 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12192 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12195 *SRC=DCX123JU;DI_DCX123JU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12196 .MODEL DI_DCX123JU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12197 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12198 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12199 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12200 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
12202 ******************************************************************************************************************************************
\r
12203 Note: The following SPICE model is for the transistor element.
\r
12204 When applying this SPICE model to your circuit simulation be certain
\r
12205 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12206 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12209 *SRC=DCX124EH;DI_DCX124EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12210 .MODEL DI_DCX124EH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12211 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12212 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12213 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12214 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12215 ********************************************************************************************************************************
\r
12216 ***************************************************************************************************************************************
\r
12217 Note: The following SPICE model is for the transistor element.
\r
12218 When applying this SPICE model to your circuit simulation be certain
\r
12219 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12220 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12223 *SRC=DCX124EH;DI_DCX124EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12224 .MODEL DI_DCX124EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12225 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12226 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12227 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12228 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
12230 *SRC=DCX124EK;DI_DCX124EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12231 .MODEL DI_DCX124EK NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12232 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12233 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12234 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12235 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12236 ********************************************************************************************************************************
\r
12237 ***************************************************************************************************************************************
\r
12238 Note: The following SPICE model is for the transistor element.
\r
12239 When applying this SPICE model to your circuit simulation be certain
\r
12240 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12241 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12244 *SRC=DCX124EK;DI_DCX124EK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12245 .MODEL DI_DCX124EK NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12246 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12247 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12248 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12249 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
12251 ******************************************************************************************************************************************
\r
12252 Note: The following SPICE model is for the transistor element.
\r
12253 When applying this SPICE model to your circuit simulation be certain
\r
12254 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12255 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12258 *SRC=DCX124EU;DI_DCX124EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12259 .MODEL DI_DCX124EU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12260 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12261 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12262 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12263 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12264 ********************************************************************************************************************************
\r
12265 ***************************************************************************************************************************************
\r
12266 Note: The following SPICE model is for the transistor element.
\r
12267 When applying this SPICE model to your circuit simulation be certain
\r
12268 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12269 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12272 *SRC=DCX124EU;DI_DCX124EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12273 .MODEL DI_DCX124EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12274 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12275 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12276 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12277 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
12279 ******************************************************************************************************************************************
\r
12280 Note: The following SPICE model is for the transistor element.
\r
12281 When applying this SPICE model to your circuit simulation be certain
\r
12282 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12283 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12286 *SRC=DCX142JH;DI_DCX142JH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12287 .MODEL DI_DCX142JH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12288 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12289 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12290 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12291 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12292 ********************************************************************************************************************************
\r
12293 ***************************************************************************************************************************************
\r
12294 Note: The following SPICE model is for the transistor element.
\r
12295 When applying this SPICE model to your circuit simulation be certain
\r
12296 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12297 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12300 *SRC=DCX142JH;DI_DCX142JH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12301 .MODEL DI_DCX142JH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12302 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12303 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12304 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12305 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
12307 ******************************************************************************************************************************************
\r
12308 Note: The following SPICE model is for the transistor element.
\r
12309 When applying this SPICE model to your circuit simulation be certain
\r
12310 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12311 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12314 *SRC=DCX142TH;DI_DCX142TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12315 .MODEL DI_DCX142TH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12316 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12317 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12318 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12319 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12320 ********************************************************************************************************************************
\r
12321 ***************************************************************************************************************************************
\r
12322 Note: The following SPICE model is for the transistor element.
\r
12323 When applying this SPICE model to your circuit simulation be certain
\r
12324 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12325 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12328 *SRC=DCX142TH;DI_DCX142TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12329 .MODEL DI_DCX142TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12330 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12331 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12332 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12333 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
12335 ******************************************************************************************************************************************
\r
12336 Note: The following SPICE model is for the transistor element.
\r
12337 When applying this SPICE model to your circuit simulation be certain
\r
12338 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12339 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12342 *SRC=DCX143EH;DI_DCX143EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12343 .MODEL DI_DCX143EH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12344 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12345 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12346 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12347 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12348 ********************************************************************************************************************************
\r
12349 ***************************************************************************************************************************************
\r
12350 Note: The following SPICE model is for the transistor element.
\r
12351 When applying this SPICE model to your circuit simulation be certain
\r
12352 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12353 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12356 *SRC=DCX143EH;DI_DCX143EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12357 .MODEL DI_DCX143EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12358 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12359 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12360 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12361 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
12363 ******************************************************************************************************************************************
\r
12364 Note: The following SPICE model is for the transistor element.
\r
12365 When applying this SPICE model to your circuit simulation be certain
\r
12366 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12367 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12370 *SRC=DCX114EH;DI_DCX114EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12371 .MODEL DI_DCX114EH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12372 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12373 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12374 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12375 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12376 ********************************************************************************************************************************
\r
12377 ***************************************************************************************************************************************
\r
12378 Note: The following SPICE model is for the transistor element.
\r
12379 When applying this SPICE model to your circuit simulation be certain
\r
12380 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12381 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12384 *SRC=DCX114EH;DI_DCX114EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12385 .MODEL DI_DCX114EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12386 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12387 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12388 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12389 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
12391 ******************************************************************************************************************************************
\r
12392 Note: The following SPICE model is for the transistor element.
\r
12393 When applying this SPICE model to your circuit simulation be certain
\r
12394 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12395 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12398 *SRC=DCX143TK;DI_DCX143TK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12399 .MODEL DI_DCX143TK NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12400 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12401 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12402 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12403 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12404 ********************************************************************************************************************************
\r
12405 ***************************************************************************************************************************************
\r
12406 Note: The following SPICE model is for the transistor element.
\r
12407 When applying this SPICE model to your circuit simulation be certain
\r
12408 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12409 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12412 *SRC=DCX143TK;DI_DCX143TK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12413 .MODEL DI_DCX143TK NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12414 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12415 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12416 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12417 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
12419 ******************************************************************************************************************************************
\r
12420 Note: The following SPICE model is for the transistor element.
\r
12421 When applying this SPICE model to your circuit simulation be certain
\r
12422 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12423 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12426 *SRC=DCX143TU;DI_DCX143TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12427 .MODEL DI_DCX143TU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12428 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12429 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12430 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12431 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12432 ********************************************************************************************************************************
\r
12433 ***************************************************************************************************************************************
\r
12434 Note: The following SPICE model is for the transistor element.
\r
12435 When applying this SPICE model to your circuit simulation be certain
\r
12436 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12437 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12440 *SRC=DCX143TU;DI_DCX143TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12441 .MODEL DI_DCX143TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12442 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12443 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12444 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12445 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
12447 ******************************************************************************************************************************************
\r
12448 Note: The following SPICE model is for the transistor element.
\r
12449 When applying this SPICE model to your circuit simulation be certain
\r
12450 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12451 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12454 *SRC=DCX144EH;DI_DCX144EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12455 .MODEL DI_DCX144EH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12456 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12457 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12458 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12459 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12460 ********************************************************************************************************************************
\r
12461 ***************************************************************************************************************************************
\r
12462 Note: The following SPICE model is for the transistor element.
\r
12463 When applying this SPICE model to your circuit simulation be certain
\r
12464 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12465 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12468 *SRC=DCX144EH;DI_DCX144EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12469 .MODEL DI_DCX144EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12470 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12471 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12472 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12473 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
12475 ******************************************************************************************************************************************
\r
12476 Note: The following SPICE model is for the transistor element.
\r
12477 When applying this SPICE model to your circuit simulation be certain
\r
12478 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12479 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12482 *SRC=DCX144EK;DI_DCX144EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12483 .MODEL DI_DCX144EK NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12484 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12485 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12486 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12487 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12488 ********************************************************************************************************************************
\r
12489 ***************************************************************************************************************************************
\r
12490 Note: The following SPICE model is for the transistor element.
\r
12491 When applying this SPICE model to your circuit simulation be certain
\r
12492 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12493 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12496 *SRC=DCX144EK;DI_DCX144EK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12497 .MODEL DI_DCX144EK NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12498 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12499 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12500 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12501 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
12503 ******************************************************************************************************************************************
\r
12504 Note: The following SPICE model is for the transistor element.
\r
12505 When applying this SPICE model to your circuit simulation be certain
\r
12506 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12507 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12510 *SRC=DCX144EU;DI_DCX144EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12511 .MODEL DI_DCX144EU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12512 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12513 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12514 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12515 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12516 ********************************************************************************************************************************
\r
12517 ***************************************************************************************************************************************
\r
12518 Note: The following SPICE model is for the transistor element.
\r
12519 When applying this SPICE model to your circuit simulation be certain
\r
12520 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12521 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12524 *SRC=DCX144EU;DI_DCX144EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12525 .MODEL DI_DCX144EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12526 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12527 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12528 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12529 + MJC=0.300 TF=549p TR=119n EG=1.12 )*********
\r
12531 Note: The following SPICE model is for the transistor element.
\r
12532 When applying this SPICE model to your circuit simulation be certain to
\r
12533 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12534 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12536 *SRC=DDA114EH;DI_DDA114EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12537 .MODEL DI_DDA114EH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12538 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12539 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12540 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12541 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12543 Note: The following SPICE model is for the transistor element.
\r
12544 When applying this SPICE model to your circuit simulation be certain to
\r
12545 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12546 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12548 *SRC=DDA114EK;DI_DDA114EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12549 .MODEL DI_DDA114EK NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12550 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12551 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12552 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12553 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12555 Note: The following SPICE model is for the transistor element.
\r
12556 When applying this SPICE model to your circuit simulation be certain to
\r
12557 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12558 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12560 *SRC=DDA114EU;DI_DDA114EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12561 .MODEL DI_DDA114EU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12562 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12563 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12564 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12565 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12567 Note: The following SPICE model is for the transistor element.
\r
12568 When applying this SPICE model to your circuit simulation be certain to
\r
12569 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12570 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12572 *SRC=DDA114TH;DI_DDA114TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12573 .MODEL DI_DDA114TH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12574 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12575 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12576 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12577 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12579 Note: The following SPICE model is for the transistor element.
\r
12580 When applying this SPICE model to your circuit simulation be certain to
\r
12581 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12582 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12584 *SRC=DDA114TK;DI_DDA114TK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12585 .MODEL DI_DDA114TK NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12586 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12587 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12588 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12589 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12591 Note: The following SPICE model is for the transistor element.
\r
12592 When applying this SPICE model to your circuit simulation be certain to
\r
12593 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12594 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12596 *SRC=DDA114TU;DI_DDA114TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12597 .MODEL DI_DDA114TU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12598 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12599 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12600 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12601 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12603 Note: The following SPICE model is for the transistor element.
\r
12604 When applying this SPICE model to your circuit simulation be certain to
\r
12605 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12606 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12608 *SRC=DDA114YH;DI_DDA114YH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12609 .MODEL DI_DDA114YH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12610 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12611 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12612 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12613 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12615 Note: The following SPICE model is for the transistor element.
\r
12616 When applying this SPICE model to your circuit simulation be certain to
\r
12617 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12618 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12620 *SRC=DDA114YK;DI_DDA114YK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12621 .MODEL DI_DDA114YK NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12622 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12623 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12624 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12625 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12627 Note: The following SPICE model is for the transistor element.
\r
12628 When applying this SPICE model to your circuit simulation be certain to
\r
12629 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12630 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12632 *SRC=DDA114YU;DI_DDA114YU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12633 .MODEL DI_DDA114YU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12634 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12635 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12636 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12637 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12639 Note: The following SPICE model is for the transistor element.
\r
12640 When applying this SPICE model to your circuit simulation be certain to
\r
12641 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12642 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12644 *SRC=DDA122LH;DI_DDA122LH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12645 .MODEL DI_DDA122LH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12646 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12647 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12648 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12649 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12651 Note: The following SPICE model is for the transistor element.
\r
12652 When applying this SPICE model to your circuit simulation be certain to
\r
12653 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12654 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12656 *SRC=DDA122LU;DI_DDA122LU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12657 .MODEL DI_DDA122LU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12658 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12659 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12660 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12661 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12663 Note: The following SPICE model is for the transistor element.
\r
12664 When applying this SPICE model to your circuit simulation be certain to
\r
12665 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12666 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12668 *SRC=DDA122TH;DI_DDA122TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12669 .MODEL DI_DDA122TH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12670 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12671 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12672 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12673 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12675 Note: The following SPICE model is for the transistor element.
\r
12676 When applying this SPICE model to your circuit simulation be certain to
\r
12677 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12678 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12680 *SRC=DDA122TU;DI_DDA122TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12681 .MODEL DI_DDA122TU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12682 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12683 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12684 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12685 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12687 Note: The following SPICE model is for the transistor element.
\r
12688 When applying this SPICE model to your circuit simulation be certain to
\r
12689 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12690 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12692 *SRC=DDA123JH;DI_DDA123JH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12693 .MODEL DI_DDA123JH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12694 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12695 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12696 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12697 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12699 Note: The following SPICE model is for the transistor element.
\r
12700 When applying this SPICE model to your circuit simulation be certain to
\r
12701 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12702 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12704 *SRC=DDA123JK;DI_DDA123JK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12705 .MODEL DI_DDA123JK NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12706 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12707 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12708 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12709 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12711 Note: The following SPICE model is for the transistor element.
\r
12712 When applying this SPICE model to your circuit simulation be certain to
\r
12713 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12714 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12716 *SRC=DDA123JU;DI_DDA123JU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12717 .MODEL DI_DDA123JU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12718 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12719 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12720 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12721 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12723 Note: The following SPICE model is for the transistor element.
\r
12724 When applying this SPICE model to your circuit simulation be certain to
\r
12725 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12726 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12728 *SRC=DDA124EH;DI_DDA124EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12729 .MODEL DI_DDA124EH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12730 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12731 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12732 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12733 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12735 Note: The following SPICE model is for the transistor element.
\r
12736 When applying this SPICE model to your circuit simulation be certain to
\r
12737 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12738 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12740 *SRC=DDA124EK;DI_DDA124EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12741 .MODEL DI_DDA124EK NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12742 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12743 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12744 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12745 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12747 Note: The following SPICE model is for the transistor element.
\r
12748 When applying this SPICE model to your circuit simulation be certain to
\r
12749 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12750 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12752 *SRC=DDA124EU;DI_DDA124EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12753 .MODEL DI_DDA124EU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12754 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12755 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12756 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12757 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12759 Note: The following SPICE model is for the transistor element.
\r
12760 When applying this SPICE model to your circuit simulation be certain to
\r
12761 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12762 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12764 *SRC=DDA142JH;DI_DDA142JH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12765 .MODEL DI_DDA142JH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12766 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12767 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12768 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12769 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12771 Note: The following SPICE model is for the transistor element.
\r
12772 When applying this SPICE model to your circuit simulation be certain to
\r
12773 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12774 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12776 *SRC=DDA142JU;DI_DDA142JU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12777 .MODEL DI_DDA142JU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12778 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12779 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12780 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12781 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12783 Note: The following SPICE model is for the transistor element.
\r
12784 When applying this SPICE model to your circuit simulation be certain to
\r
12785 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12786 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12788 *SRC=DDA142TH;DI_DDA142TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12789 .MODEL DI_DDA142TH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12790 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12791 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12792 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12793 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12795 Note: The following SPICE model is for the transistor element.
\r
12796 When applying this SPICE model to your circuit simulation be certain to
\r
12797 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12798 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12800 *SRC=DDA142TU;DI_DDA142TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12801 .MODEL DI_DDA142TU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12802 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12803 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12804 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12805 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12807 Note: The following SPICE model is for the transistor element.
\r
12808 When applying this SPICE model to your circuit simulation be certain to
\r
12809 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12810 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12812 *SRC=DDA143EH;DI_DDA143EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12813 .MODEL DI_DDA143EH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12814 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12815 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12816 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12817 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12819 Note: The following SPICE model is for the transistor element.
\r
12820 When applying this SPICE model to your circuit simulation be certain to
\r
12821 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12822 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12824 *SRC=DDA143TH;DI_DDA143TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12825 .MODEL DI_DDA143TH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12826 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12827 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12828 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12829 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12831 Note: The following SPICE model is for the transistor element.
\r
12832 When applying this SPICE model to your circuit simulation be certain to
\r
12833 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12834 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12836 *SRC=DDA143TK;DI_DDA143TK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12837 .MODEL DI_DDA143TK NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12838 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12839 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12840 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12841 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12843 Note: The following SPICE model is for the transistor element.
\r
12844 When applying this SPICE model to your circuit simulation be certain to
\r
12845 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12846 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12848 *SRC=DDA143TU;DI_DDA143TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12849 .MODEL DI_DDA143TU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12850 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12851 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12852 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12853 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12855 Note: The following SPICE model is for the transistor element.
\r
12856 When applying this SPICE model to your circuit simulation be certain to
\r
12857 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12858 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12860 *SRC=DDA144EH;DI_DDA144EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12861 .MODEL DI_DDA144EH NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12862 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12863 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12864 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12865 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12867 Note: The following SPICE model is for the transistor element.
\r
12868 When applying this SPICE model to your circuit simulation be certain to
\r
12869 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12870 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12872 *SRC=DDA144EK;DI_DDA144EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12873 .MODEL DI_DDA144EK NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12874 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12875 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12876 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12877 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12879 Note: The following SPICE model is for the transistor element.
\r
12880 When applying this SPICE model to your circuit simulation be certain to
\r
12881 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
12882 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
12884 *SRC=DDA144EU;DI_DDA144EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12885 .MODEL DI_DDA144EU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
12886 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
12887 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
12888 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
12889 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
12891 ******************************************************************************************************************************************
\r
12892 Note: The following SPICE model is for the transistor element.
\r
12893 When applying this SPICE model to your circuit simulation be certain
\r
12894 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12895 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12898 *SRC=DDC114EH;DI_DDC114EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12899 .MODEL DI_DDC114EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12900 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12901 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12902 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12903 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
12904 *****************************************************************************************************************************************
\r
12906 ******************************************************************************************************************************************
\r
12907 Note: The following SPICE model is for the transistor element.
\r
12908 When applying this SPICE model to your circuit simulation be certain
\r
12909 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12910 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12913 *SRC=DDC114EK;DI_DDC114EK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12914 .MODEL DI_DDC114EK NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12915 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12916 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12917 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12918 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
12919 *****************************************************************************************************************************************
\r
12921 ******************************************************************************************************************************************
\r
12922 Note: The following SPICE model is for the transistor element.
\r
12923 When applying this SPICE model to your circuit simulation be certain
\r
12924 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12925 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12928 *SRC=DDC114EU;DI_DDC114EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12929 .MODEL DI_DDC114EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12930 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12931 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12932 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12933 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
12934 *****************************************************************************************************************************************
\r
12936 ******************************************************************************************************************************************
\r
12937 Note: The following SPICE model is for the transistor element.
\r
12938 When applying this SPICE model to your circuit simulation be certain
\r
12939 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12940 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12943 *SRC=DDC114TH;DI_DDC114TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12944 .MODEL DI_DDC114TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12945 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12946 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12947 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12948 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
12949 *****************************************************************************************************************************************
\r
12951 ******************************************************************************************************************************************
\r
12952 Note: The following SPICE model is for the transistor element.
\r
12953 When applying this SPICE model to your circuit simulation be certain
\r
12954 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12955 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12958 *SRC=DDC114TK;DI_DDC114TK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12959 .MODEL DI_DDC114TK NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12960 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12961 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12962 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12963 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
12964 *****************************************************************************************************************************************
\r
12966 ******************************************************************************************************************************************
\r
12967 Note: The following SPICE model is for the transistor element.
\r
12968 When applying this SPICE model to your circuit simulation be certain
\r
12969 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12970 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12973 *SRC=DDC114TU;DI_DDC114TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12974 .MODEL DI_DDC114TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12975 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12976 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12977 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12978 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
12979 *****************************************************************************************************************************************
\r
12981 ******************************************************************************************************************************************
\r
12982 Note: The following SPICE model is for the transistor element.
\r
12983 When applying this SPICE model to your circuit simulation be certain
\r
12984 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
12985 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
12988 *SRC=DDC114YH;DI_DDC114YH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
12989 .MODEL DI_DDC114YH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
12990 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
12991 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
12992 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
12993 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
12994 *****************************************************************************************************************************************
\r
12996 ******************************************************************************************************************************************
\r
12997 Note: The following SPICE model is for the transistor element.
\r
12998 When applying this SPICE model to your circuit simulation be certain
\r
12999 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13000 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13003 *SRC=DDC114YK;DI_DDC114YK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13004 .MODEL DI_DDC114YK NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13005 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13006 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13007 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13008 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13009 *****************************************************************************************************************************************
\r
13011 ******************************************************************************************************************************************
\r
13012 Note: The following SPICE model is for the transistor element.
\r
13013 When applying this SPICE model to your circuit simulation be certain
\r
13014 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13015 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13018 *SRC=DDC114YU;DI_DDC114YU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13019 .MODEL DI_DDC114YU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13020 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13021 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13022 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13023 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13024 *****************************************************************************************************************************************
\r
13026 ******************************************************************************************************************************************
\r
13027 Note: The following SPICE model is for the transistor element.
\r
13028 When applying this SPICE model to your circuit simulation be certain
\r
13029 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13030 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13033 *SRC=DDC122LH;DI_DDC122LH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13034 .MODEL DI_DDC122LH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13035 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13036 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13037 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13038 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13039 *****************************************************************************************************************************************
\r
13041 ******************************************************************************************************************************************
\r
13042 Note: The following SPICE model is for the transistor element.
\r
13043 When applying this SPICE model to your circuit simulation be certain
\r
13044 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13045 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13048 *SRC=DDC122LH;DI_DDC122LH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13049 .MODEL DI_DDC122LH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13050 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13051 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13052 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13053 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13054 *****************************************************************************************************************************************
\r
13056 ******************************************************************************************************************************************
\r
13057 Note: The following SPICE model is for the transistor element.
\r
13058 When applying this SPICE model to your circuit simulation be certain
\r
13059 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13060 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13063 *SRC=DDC122TH;DI_DDC122TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13064 .MODEL DI_DDC122TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13065 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13066 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13067 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13068 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13069 *****************************************************************************************************************************************
\r
13071 ******************************************************************************************************************************************
\r
13072 Note: The following SPICE model is for the transistor element.
\r
13073 When applying this SPICE model to your circuit simulation be certain
\r
13074 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13075 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13078 *SRC=DDC122TU;DI_DDC122TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13079 .MODEL DI_DDC122TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13080 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13081 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13082 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13083 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13084 *****************************************************************************************************************************************
\r
13086 ******************************************************************************************************************************************
\r
13087 Note: The following SPICE model is for the transistor element.
\r
13088 When applying this SPICE model to your circuit simulation be certain
\r
13089 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13090 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13093 *SRC=DDC123JH;DI_DDC123JH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13094 .MODEL DI_DDC123JH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13095 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13096 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13097 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13098 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13099 *****************************************************************************************************************************************
\r
13101 ******************************************************************************************************************************************
\r
13102 Note: The following SPICE model is for the transistor element.
\r
13103 When applying this SPICE model to your circuit simulation be certain
\r
13104 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13105 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13108 *SRC=DDC123JK;DI_DDC123JK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13109 .MODEL DI_DDC123JK NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13110 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13111 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13112 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13113 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13114 *****************************************************************************************************************************************
\r
13116 ******************************************************************************************************************************************
\r
13117 Note: The following SPICE model is for the transistor element.
\r
13118 When applying this SPICE model to your circuit simulation be certain
\r
13119 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13120 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13123 *SRC=DDC123JU;DI_DDC123JU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13124 .MODEL DI_DDC123JU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13125 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13126 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13127 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13128 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13129 *****************************************************************************************************************************************
\r
13131 ******************************************************************************************************************************************
\r
13132 Note: The following SPICE model is for the transistor element.
\r
13133 When applying this SPICE model to your circuit simulation be certain
\r
13134 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13135 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13138 *SRC=DDC124EH;DI_DDC124EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13139 .MODEL DI_DDC124EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13140 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13141 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13142 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13143 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13144 *****************************************************************************************************************************************
\r
13146 ******************************************************************************************************************************************
\r
13147 Note: The following SPICE model is for the transistor element.
\r
13148 When applying this SPICE model to your circuit simulation be certain
\r
13149 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13150 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13153 *SRC=DDC124EK;DI_DDC124EK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13154 .MODEL DI_DDC124EK NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13155 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13156 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13157 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13158 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13159 *****************************************************************************************************************************************
\r
13161 ******************************************************************************************************************************************
\r
13162 Note: The following SPICE model is for the transistor element.
\r
13163 When applying this SPICE model to your circuit simulation be certain
\r
13164 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13165 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13168 *SRC=DDC124EU;DI_DDC124EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13169 .MODEL DI_DDC124EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13170 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13171 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13172 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13173 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13174 *****************************************************************************************************************************************
\r
13176 ******************************************************************************************************************************************
\r
13177 Note: The following SPICE model is for the transistor element.
\r
13178 When applying this SPICE model to your circuit simulation be certain
\r
13179 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13180 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13183 *SRC=DDC142JH;DI_DDC142JH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13184 .MODEL DI_DDC142JH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13185 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13186 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13187 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13188 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13189 *****************************************************************************************************************************************
\r
13191 ******************************************************************************************************************************************
\r
13192 Note: The following SPICE model is for the transistor element.
\r
13193 When applying this SPICE model to your circuit simulation be certain
\r
13194 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13195 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13198 *SRC=DDC142JU;DI_DDC142JU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13199 .MODEL DI_DDC142JU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13200 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13201 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13202 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13203 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13204 *****************************************************************************************************************************************
\r
13206 ******************************************************************************************************************************************
\r
13207 Note: The following SPICE model is for the transistor element.
\r
13208 When applying this SPICE model to your circuit simulation be certain
\r
13209 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13210 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13213 *SRC=DDC142TH;DI_DDC142TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13214 .MODEL DI_DDC142TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13215 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13216 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13217 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13218 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13219 *****************************************************************************************************************************************
\r
13221 ******************************************************************************************************************************************
\r
13222 Note: The following SPICE model is for the transistor element.
\r
13223 When applying this SPICE model to your circuit simulation be certain
\r
13224 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13225 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13228 *SRC=DDC142TU;DI_DDC142TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13229 .MODEL DI_DDC142TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13230 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13231 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13232 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13233 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13234 *****************************************************************************************************************************************
\r
13236 ******************************************************************************************************************************************
\r
13237 Note: The following SPICE model is for the transistor element.
\r
13238 When applying this SPICE model to your circuit simulation be certain
\r
13239 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13240 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13243 *SRC=DDC143EH;DI_DDC143EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13244 .MODEL DI_DDC143EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13245 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13246 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13247 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13248 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13249 *****************************************************************************************************************************************
\r
13251 ******************************************************************************************************************************************
\r
13252 Note: The following SPICE model is for the transistor element.
\r
13253 When applying this SPICE model to your circuit simulation be certain
\r
13254 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13255 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13258 *SRC=DDC143TH;DI_DDC143TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13259 .MODEL DI_DDC143TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13260 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13261 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13262 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13263 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13264 *****************************************************************************************************************************************
\r
13266 ******************************************************************************************************************************************
\r
13267 Note: The following SPICE model is for the transistor element.
\r
13268 When applying this SPICE model to your circuit simulation be certain
\r
13269 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13270 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13273 *SRC=DDC143TK;DI_DDC143TK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13274 .MODEL DI_DDC143TK NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13275 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13276 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13277 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13278 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13279 *****************************************************************************************************************************************
\r
13281 ******************************************************************************************************************************************
\r
13282 Note: The following SPICE model is for the transistor element.
\r
13283 When applying this SPICE model to your circuit simulation be certain
\r
13284 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13285 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13288 *SRC=DDC143TU;DI_DDC143TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13289 .MODEL DI_DDC143TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13290 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13291 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13292 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13293 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13294 *****************************************************************************************************************************************
\r
13296 ******************************************************************************************************************************************
\r
13297 Note: The following SPICE model is for the transistor element.
\r
13298 When applying this SPICE model to your circuit simulation be certain
\r
13299 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13300 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13303 *SRC=DDC144EH;DI_DDC144EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13304 .MODEL DI_DDC144EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13305 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13306 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13307 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13308 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13309 *****************************************************************************************************************************************
\r
13311 ******************************************************************************************************************************************
\r
13312 Note: The following SPICE model is for the transistor element.
\r
13313 When applying this SPICE model to your circuit simulation be certain
\r
13314 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13315 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13318 *SRC=DDC144EK;DI_DDC144EK;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13319 .MODEL DI_DDC144EK NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13320 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13321 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13322 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13323 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13324 *****************************************************************************************************************************************
\r
13326 ******************************************************************************************************************************************
\r
13327 Note: The following SPICE model is for the transistor element.
\r
13328 When applying this SPICE model to your circuit simulation be certain
\r
13329 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
13330 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
13333 *SRC=DDC144EU;DI_DDC144EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13334 .MODEL DI_DDC144EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
13335 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
13336 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
13337 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
13338 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
13339 *****************************************************************************************************************************************
\r
13341 Note: The following SPICE model is for the transistor element.
\r
13342 When applying this SPICE model to your circuit simulation be certain to
\r
13343 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13344 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13346 *SRC=DDTA113TCA;DI_DDTA113TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13347 .MODEL DI_DDTA113TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13348 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13349 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13350 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13351 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13353 Note: The following SPICE model is for the transistor element.
\r
13354 When applying this SPICE model to your circuit simulation be certain to
\r
13355 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13356 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13358 *SRC=DDTA113TE;DI_DDTA113TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13359 .MODEL DI_DDTA113TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13360 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13361 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13362 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13363 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13365 Note: The following SPICE model is for the transistor element.
\r
13366 When applying this SPICE model to your circuit simulation be certain to
\r
13367 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13368 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13370 *SRC=DDTA113TKA;DI_DDTA113TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13371 .MODEL DI_DDTA113TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13372 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13373 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13374 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13375 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13377 Note: The following SPICE model is for the transistor element.
\r
13378 When applying this SPICE model to your circuit simulation be certain to
\r
13379 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13380 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13382 *SRC=DDTA113TUA;DI_DDTA113TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13383 .MODEL DI_DDTA113TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13384 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13385 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13386 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13387 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13389 Note: The following SPICE model is for the transistor element.
\r
13390 When applying this SPICE model to your circuit simulation be certain to
\r
13391 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13392 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13394 *SRC=DDTA113ZCA;DI_DDTA113ZCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13395 .MODEL DI_DDTA113ZCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13396 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13397 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13398 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13399 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13401 Note: The following SPICE model is for the transistor element.
\r
13402 When applying this SPICE model to your circuit simulation be certain to
\r
13403 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13404 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13406 *SRC=DDTA113ZE;DI_DDTA113ZE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13407 .MODEL DI_DDTA113ZE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13408 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13409 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13410 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13411 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13413 Note: The following SPICE model is for the transistor element.
\r
13414 When applying this SPICE model to your circuit simulation be certain to
\r
13415 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13416 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13418 *SRC=DDTA113ZKA;DI_DDTA113ZKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13419 .MODEL DI_DDTA113ZKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13420 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13421 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13422 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13423 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13425 Note: The following SPICE model is for the transistor element.
\r
13426 When applying this SPICE model to your circuit simulation be certain to
\r
13427 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13428 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13430 *SRC=DDTA113ZUA;DI_DDTA113ZUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13431 .MODEL DI_DDTA113ZUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13432 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13433 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13434 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13435 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13437 Note: The following SPICE model is for the transistor element.
\r
13438 When applying this SPICE model to your circuit simulation be certain to
\r
13439 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13440 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13442 *SRC=DDTA114ECA;DI_DDTA114ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13443 .MODEL DI_DDTA114ECA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13444 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13445 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13446 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13447 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13449 Note: The following SPICE model is for the transistor element.
\r
13450 When applying this SPICE model to your circuit simulation be certain to
\r
13451 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13452 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13454 *SRC=DDTA114EE;DI_DDTA114EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13455 .MODEL DI_DDTA114EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13456 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13457 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13458 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13459 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13461 Note: The following SPICE model is for the transistor element.
\r
13462 When applying this SPICE model to your circuit simulation be certain to
\r
13463 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13464 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13466 *SRC=DDTA114EKA;DI_DDTA114EKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13467 .MODEL DI_DDTA114EKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13468 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13469 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13470 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13471 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13473 Note: The following SPICE model is for the transistor element.
\r
13474 When applying this SPICE model to your circuit simulation be certain to
\r
13475 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13476 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13478 *SRC=DDTA114EUA;DI_DDTA114EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13479 .MODEL DI_DDTA114EUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13480 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13481 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13482 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13483 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13485 Note: The following SPICE model is for the transistor element.
\r
13486 When applying this SPICE model to your circuit simulation be certain to
\r
13487 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13488 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13490 *SRC=DDTA114GCA;DI_DDTA114GCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13491 .MODEL DI_DDTA114GCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13492 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13493 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13494 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13495 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13497 Note: The following SPICE model is for the transistor element.
\r
13498 When applying this SPICE model to your circuit simulation be certain to
\r
13499 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13500 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13502 *SRC=DDTA114GE;DI_DDTA114GE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13503 .MODEL DI_DDTA114GE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13504 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13505 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13506 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13507 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13509 Note: The following SPICE model is for the transistor element.
\r
13510 When applying this SPICE model to your circuit simulation be certain to
\r
13511 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13512 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13514 *SRC=DDTA114GUA;DI_DDTA114GUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13515 .MODEL DI_DDTA114GUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13516 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13517 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13518 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13519 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13521 Note: The following SPICE model is for the transistor element.
\r
13522 When applying this SPICE model to your circuit simulation be certain to
\r
13523 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13524 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13526 *SRC=DDTA114KA;DI_DDTA114KA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13527 .MODEL DI_DDTA114KA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13528 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13529 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13530 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13531 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13533 Note: The following SPICE model is for the transistor element.
\r
13534 When applying this SPICE model to your circuit simulation be certain to
\r
13535 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13536 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13538 *SRC=DDTA114TCA;DI_DDTA114TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13539 .MODEL DI_DDTA114TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13540 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13541 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13542 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13543 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13545 Note: The following SPICE model is for the transistor element.
\r
13546 When applying this SPICE model to your circuit simulation be certain to
\r
13547 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13548 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13550 *SRC=DDTA114TE;DI_DDTA114TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13551 .MODEL DI_DDTA114TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13552 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13553 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13554 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13555 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13557 Note: The following SPICE model is for the transistor element.
\r
13558 When applying this SPICE model to your circuit simulation be certain to
\r
13559 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13560 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13562 *SRC=DDTA114TKA;DI_DDTA114TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13563 .MODEL DI_DDTA114TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13564 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13565 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13566 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13567 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13569 Note: The following SPICE model is for the transistor element.
\r
13570 When applying this SPICE model to your circuit simulation be certain to
\r
13571 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13572 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13574 *SRC=DDTA114TUA;DI_DDTA114TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13575 .MODEL DI_DDTA114TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13576 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13577 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13578 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13579 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13581 Note: The following SPICE model is for the transistor element.
\r
13582 When applying this SPICE model to your circuit simulation be certain to
\r
13583 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13584 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13586 *SRC=DDTA114WCA;DI_DDTA114WCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13587 .MODEL DI_DDTA114WCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13588 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13589 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13590 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13591 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13593 Note: The following SPICE model is for the transistor element.
\r
13594 When applying this SPICE model to your circuit simulation be certain to
\r
13595 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13596 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13598 *SRC=DDTA114WE;DI_DDTA114WE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13599 .MODEL DI_DDTA114WE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13600 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13601 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13602 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13603 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13605 Note: The following SPICE model is for the transistor element.
\r
13606 When applying this SPICE model to your circuit simulation be certain to
\r
13607 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13608 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13610 *SRC=DDTA114WKA;DI_DDTA114WKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13611 .MODEL DI_DDTA114WKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13612 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13613 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13614 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13615 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13617 Note: The following SPICE model is for the transistor element.
\r
13618 When applying this SPICE model to your circuit simulation be certain to
\r
13619 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13620 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13622 *SRC=DDTA114WUA;DI_DDTA114WUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13623 .MODEL DI_DDTA114WUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13624 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13625 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13626 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13627 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13629 Note: The following SPICE model is for the transistor element.
\r
13630 When applying this SPICE model to your circuit simulation be certain to
\r
13631 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13632 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13634 *SRC=DDTA114YCA;DI_DDTA114YCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13635 .MODEL DI_DDTA114YCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13636 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13637 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13638 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13639 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13641 Note: The following SPICE model is for the transistor element.
\r
13642 When applying this SPICE model to your circuit simulation be certain to
\r
13643 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13644 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13646 *SRC=DDTA114YE;DI_DDTA114YE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13647 .MODEL DI_DDTA114YE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13648 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13649 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13650 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13651 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13653 Note: The following SPICE model is for the transistor element.
\r
13654 When applying this SPICE model to your circuit simulation be certain to
\r
13655 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13656 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13658 *SRC=DDTA114YKA;DI_DDTA114YKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13659 .MODEL DI_DDTA114YKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13660 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13661 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13662 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13663 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13665 Note: The following SPICE model is for the transistor element.
\r
13666 When applying this SPICE model to your circuit simulation be certain to
\r
13667 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13668 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13670 *SRC=DDTA114YUA;DI_DDTA114YUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13671 .MODEL DI_DDTA114YUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13672 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13673 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13674 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13675 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13677 Note: The following SPICE model is for the transistor element.
\r
13678 When applying this SPICE model to your circuit simulation be certain to
\r
13679 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13680 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13682 *SRC=DDTA115ECA;DI_DDTA115ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13683 .MODEL DI_DDTA115ECA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13684 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13685 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13686 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13687 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13689 Note: The following SPICE model is for the transistor element.
\r
13690 When applying this SPICE model to your circuit simulation be certain to
\r
13691 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13692 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13694 *SRC=DDTA115EE;DI_DDTA115EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13695 .MODEL DI_DDTA115EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13696 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13697 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13698 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13699 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13701 Note: The following SPICE model is for the transistor element.
\r
13702 When applying this SPICE model to your circuit simulation be certain to
\r
13703 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13704 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13706 *SRC=DDTA115EKA;DI_DDTA115EKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13707 .MODEL DI_DDTA115EKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13708 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13709 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13710 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13711 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13713 Note: The following SPICE model is for the transistor element.
\r
13714 When applying this SPICE model to your circuit simulation be certain to
\r
13715 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13716 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13718 *SRC=DDTA115EUA;DI_DDTA115EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13719 .MODEL DI_DDTA115EUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13720 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13721 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13722 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13723 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13725 Note: The following SPICE model is for the transistor element.
\r
13726 When applying this SPICE model to your circuit simulation be certain to
\r
13727 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13728 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13730 *SRC=DDTA115GCA;DI_DDTA115GCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13731 .MODEL DI_DDTA115GCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13732 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13733 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13734 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13735 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13737 Note: The following SPICE model is for the transistor element.
\r
13738 When applying this SPICE model to your circuit simulation be certain to
\r
13739 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13740 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13742 *SRC=DDTA115GE;DI_DDTA115GE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13743 .MODEL DI_DDTA115GE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13744 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13745 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13746 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13747 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13749 Note: The following SPICE model is for the transistor element.
\r
13750 When applying this SPICE model to your circuit simulation be certain to
\r
13751 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13752 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13754 *SRC=DDTA115GUA;DI_DDTA115GUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13755 .MODEL DI_DDTA115GUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13756 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13757 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13758 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13759 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13761 Note: The following SPICE model is for the transistor element.
\r
13762 When applying this SPICE model to your circuit simulation be certain to
\r
13763 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13764 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13766 *SRC=DDTA115KA;DI_DDTA115KA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13767 .MODEL DI_DDTA115KA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13768 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13769 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13770 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13771 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13773 Note: The following SPICE model is for the transistor element.
\r
13774 When applying this SPICE model to your circuit simulation be certain to
\r
13775 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13776 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13778 *SRC=DDTA115TCA;DI_DDTA115TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13779 .MODEL DI_DDTA115TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13780 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13781 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13782 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13783 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13785 Note: The following SPICE model is for the transistor element.
\r
13786 When applying this SPICE model to your circuit simulation be certain to
\r
13787 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13788 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13790 *SRC=DDTA115TE;DI_DDTA115TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13791 .MODEL DI_DDTA115TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13792 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13793 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13794 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13795 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13797 Note: The following SPICE model is for the transistor element.
\r
13798 When applying this SPICE model to your circuit simulation be certain to
\r
13799 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13800 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13802 *SRC=DDTA115TKA;DI_DDTA115TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13803 .MODEL DI_DDTA115TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13804 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13805 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13806 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13807 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13809 Note: The following SPICE model is for the transistor element.
\r
13810 When applying this SPICE model to your circuit simulation be certain to
\r
13811 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13812 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13814 *SRC=DDTA115TUA;DI_DDTA115TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13815 .MODEL DI_DDTA115TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13816 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13817 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13818 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13819 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13821 Note: The following SPICE model is for the transistor element.
\r
13822 When applying this SPICE model to your circuit simulation be certain to
\r
13823 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13824 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13826 *SRC=DDTA122LE;DI_DDTA122LE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13827 .MODEL DI_DDTA122LE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13828 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13829 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13830 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13831 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13833 Note: The following SPICE model is for the transistor element.
\r
13834 When applying this SPICE model to your circuit simulation be certain to
\r
13835 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13836 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13838 *SRC=DDTA122LU;DI_DDTA122LU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13839 .MODEL DI_DDTA122LU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13840 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13841 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13842 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13843 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13845 Note: The following SPICE model is for the transistor element.
\r
13846 When applying this SPICE model to your circuit simulation be certain to
\r
13847 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13848 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13850 *SRC=DDTA122TE;DI_DDTA122TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13851 .MODEL DI_DDTA122TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13852 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13853 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13854 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13855 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13857 Note: The following SPICE model is for the transistor element.
\r
13858 When applying this SPICE model to your circuit simulation be certain to
\r
13859 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13860 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13862 *SRC=DDTA122TU;DI_DDTA122TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13863 .MODEL DI_DDTA122TU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13864 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13865 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13866 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13867 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13869 Note: The following SPICE model is for the transistor element.
\r
13870 When applying this SPICE model to your circuit simulation be certain to
\r
13871 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13872 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13874 *SRC=DDTA123ECA;DI_DDTA123ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13875 .MODEL DI_DDTA123ECA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13876 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13877 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13878 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13879 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13881 Note: The following SPICE model is for the transistor element.
\r
13882 When applying this SPICE model to your circuit simulation be certain to
\r
13883 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13884 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13886 *SRC=DDTA123EE;DI_DDTA123EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13887 .MODEL DI_DDTA123EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13888 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13889 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13890 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13891 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13893 Note: The following SPICE model is for the transistor element.
\r
13894 When applying this SPICE model to your circuit simulation be certain to
\r
13895 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13896 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13898 *SRC=DDTA123EKA;DI_DDTA123EKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13899 .MODEL DI_DDTA123EKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13900 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13901 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13902 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13903 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13905 Note: The following SPICE model is for the transistor element.
\r
13906 When applying this SPICE model to your circuit simulation be certain to
\r
13907 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13908 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13910 *SRC=DDTA123EUA;DI_DDTA123EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13911 .MODEL DI_DDTA123EUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13912 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13913 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13914 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13915 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13917 Note: The following SPICE model is for the transistor element.
\r
13918 When applying this SPICE model to your circuit simulation be certain to
\r
13919 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13920 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13922 *SRC=DDTA123JCA;DI_DDTA123JCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13923 .MODEL DI_DDTA123JCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13924 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13925 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13926 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13927 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13929 Note: The following SPICE model is for the transistor element.
\r
13930 When applying this SPICE model to your circuit simulation be certain to
\r
13931 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13932 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13934 *SRC=DDTA123JE;DI_DDTA123JE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13935 .MODEL DI_DDTA123JE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13936 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13937 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13938 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13939 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13941 Note: The following SPICE model is for the transistor element.
\r
13942 When applying this SPICE model to your circuit simulation be certain to
\r
13943 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13944 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13946 *SRC=DDTA123JKA;DI_DDTA123JKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13947 .MODEL DI_DDTA123JKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13948 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13949 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13950 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13951 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13953 Note: The following SPICE model is for the transistor element.
\r
13954 When applying this SPICE model to your circuit simulation be certain to
\r
13955 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13956 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13958 *SRC=DDTA123JUA;DI_DDTA123JUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13959 .MODEL DI_DDTA123JUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13960 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13961 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13962 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13963 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13965 Note: The following SPICE model is for the transistor element.
\r
13966 When applying this SPICE model to your circuit simulation be certain to
\r
13967 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13968 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13970 *SRC=DDTA123TCA;DI_DDTA123TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13971 .MODEL DI_DDTA123TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13972 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13973 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13974 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13975 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13977 Note: The following SPICE model is for the transistor element.
\r
13978 When applying this SPICE model to your circuit simulation be certain to
\r
13979 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13980 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13982 *SRC=DDTA123TE;DI_DDTA123TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13983 .MODEL DI_DDTA123TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13984 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13985 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13986 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13987 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
13989 Note: The following SPICE model is for the transistor element.
\r
13990 When applying this SPICE model to your circuit simulation be certain to
\r
13991 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
13992 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
13994 *SRC=DDTA123TKA;DI_DDTA123TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
13995 .MODEL DI_DDTA123TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
13996 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
13997 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
13998 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
13999 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14001 Note: The following SPICE model is for the transistor element.
\r
14002 When applying this SPICE model to your circuit simulation be certain to
\r
14003 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14004 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14006 *SRC=DDTA123TUA;DI_DDTA123TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14007 .MODEL DI_DDTA123TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14008 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14009 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14010 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14011 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14013 Note: The following SPICE model is for the transistor element.
\r
14014 When applying this SPICE model to your circuit simulation be certain to
\r
14015 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14016 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14018 *SRC=DDTA123YCA;DI_DDTA123YCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14019 .MODEL DI_DDTA123YCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14020 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14021 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14022 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14023 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14025 Note: The following SPICE model is for the transistor element.
\r
14026 When applying this SPICE model to your circuit simulation be certain to
\r
14027 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14028 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14030 *SRC=DDTA123YE;DI_DDTA123YE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14031 .MODEL DI_DDTA123YE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14032 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14033 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14034 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14035 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14037 Note: The following SPICE model is for the transistor element.
\r
14038 When applying this SPICE model to your circuit simulation be certain to
\r
14039 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14040 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14042 *SRC=DDTA123YKA;DI_DDTA123YKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14043 .MODEL DI_DDTA123YKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14044 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14045 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14046 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14047 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14049 Note: The following SPICE model is for the transistor element.
\r
14050 When applying this SPICE model to your circuit simulation be certain to
\r
14051 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14052 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14054 *SRC=DDTA123YUA;DI_DDTA123YUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14055 .MODEL DI_DDTA123YUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14056 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14057 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14058 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14059 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14061 Note: The following SPICE model is for the transistor element.
\r
14062 When applying this SPICE model to your circuit simulation be certain to
\r
14063 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14064 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14066 *SRC=DDTA124ECA;DI_DDTA124ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14067 .MODEL DI_DDTA124ECA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14068 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14069 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14070 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14071 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14073 Note: The following SPICE model is for the transistor element.
\r
14074 When applying this SPICE model to your circuit simulation be certain to
\r
14075 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14076 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14078 *SRC=DDTA124EE;DI_DDTA124EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14079 .MODEL DI_DDTA124EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14080 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14081 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14082 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14083 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14085 Note: The following SPICE model is for the transistor element.
\r
14086 When applying this SPICE model to your circuit simulation be certain to
\r
14087 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14088 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14090 *SRC=DDTA124EKA;DI_DDTA124EKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14091 .MODEL DI_DDTA124EKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14092 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14093 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14094 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14095 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14097 Note: The following SPICE model is for the transistor element.
\r
14098 When applying this SPICE model to your circuit simulation be certain to
\r
14099 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14100 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14102 *SRC=DDTA124EUA;DI_DDTA124EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14103 .MODEL DI_DDTA124EUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14104 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14105 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14106 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14107 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14109 Note: The following SPICE model is for the transistor element.
\r
14110 When applying this SPICE model to your circuit simulation be certain to
\r
14111 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14112 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14114 *SRC=DDTA124GCA;DI_DDTA124GCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14115 .MODEL DI_DDTA124GCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14116 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14117 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14118 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14119 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14121 Note: The following SPICE model is for the transistor element.
\r
14122 When applying this SPICE model to your circuit simulation be certain to
\r
14123 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14124 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14126 *SRC=DDTA124GE;DI_DDTA124GE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14127 .MODEL DI_DDTA124GE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14128 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14129 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14130 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14131 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14133 Note: The following SPICE model is for the transistor element.
\r
14134 When applying this SPICE model to your circuit simulation be certain to
\r
14135 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14136 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14138 *SRC=DDTA124GUA;DI_DDTA124GUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14139 .MODEL DI_DDTA124GUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14140 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14141 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14142 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14143 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14145 Note: The following SPICE model is for the transistor element.
\r
14146 When applying this SPICE model to your circuit simulation be certain to
\r
14147 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14148 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14150 *SRC=DDTA124KA;DI_DDTA124KA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14151 .MODEL DI_DDTA124KA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14152 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14153 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14154 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14155 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14157 Note: The following SPICE model is for the transistor element.
\r
14158 When applying this SPICE model to your circuit simulation be certain to
\r
14159 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14160 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14162 *SRC=DDTA124TCA;DI_DDTA124TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14163 .MODEL DI_DDTA124TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14164 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14165 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14166 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14167 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14169 Note: The following SPICE model is for the transistor element.
\r
14170 When applying this SPICE model to your circuit simulation be certain to
\r
14171 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14172 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14174 *SRC=DDTA124TE;DI_DDTA124TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14175 .MODEL DI_DDTA124TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14176 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14177 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14178 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14179 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14181 Note: The following SPICE model is for the transistor element.
\r
14182 When applying this SPICE model to your circuit simulation be certain to
\r
14183 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14184 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14186 *SRC=DDTA124TKA;DI_DDTA124TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14187 .MODEL DI_DDTA124TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14188 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14189 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14190 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14191 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14193 Note: The following SPICE model is for the transistor element.
\r
14194 When applying this SPICE model to your circuit simulation be certain to
\r
14195 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14196 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14198 *SRC=DDTA124TUA;DI_DDTA124TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14199 .MODEL DI_DDTA124TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14200 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14201 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14202 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14203 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14205 Note: The following SPICE model is for the transistor element.
\r
14206 When applying this SPICE model to your circuit simulation be certain to
\r
14207 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14208 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14210 *SRC=DDTA124XCA;DI_DDTA124XCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14211 .MODEL DI_DDTA124XCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14212 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14213 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14214 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14215 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14217 Note: The following SPICE model is for the transistor element.
\r
14218 When applying this SPICE model to your circuit simulation be certain to
\r
14219 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14220 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14222 *SRC=DDTA124XE;DI_DDTA124XE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14223 .MODEL DI_DDTA124XE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14224 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14225 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14226 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14227 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14229 Note: The following SPICE model is for the transistor element.
\r
14230 When applying this SPICE model to your circuit simulation be certain to
\r
14231 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14232 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14234 *SRC=DDTA124XKA;DI_DDTA124XKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14235 .MODEL DI_DDTA124XKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14236 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14237 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14238 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14239 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14241 Note: The following SPICE model is for the transistor element.
\r
14242 When applying this SPICE model to your circuit simulation be certain to
\r
14243 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14244 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14246 *SRC=DDTA124XUA;DI_DDTA124XUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14247 .MODEL DI_DDTA124XUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14248 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14249 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14250 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14251 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14253 Note: The following SPICE model is for the transistor element.
\r
14254 When applying this SPICE model to your circuit simulation be certain to
\r
14255 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14256 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14258 *SRC=DDTA125TCA;DI_DDTA125TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14259 .MODEL DI_DDTA125TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14260 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14261 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14262 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14263 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14265 Note: The following SPICE model is for the transistor element.
\r
14266 When applying this SPICE model to your circuit simulation be certain to
\r
14267 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14268 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14270 *SRC=DDTA125TE;DI_DDTA125TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14271 .MODEL DI_DDTA125TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14272 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14273 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14274 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14275 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14277 Note: The following SPICE model is for the transistor element.
\r
14278 When applying this SPICE model to your circuit simulation be certain to
\r
14279 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14280 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14282 *SRC=DDTA125TKA;DI_DDTA125TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14283 .MODEL DI_DDTA125TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14284 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14285 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14286 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14287 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14289 Note: The following SPICE model is for the transistor element.
\r
14290 When applying this SPICE model to your circuit simulation be certain to
\r
14291 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14292 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14294 *SRC=DDTA125TUA;DI_DDTA125TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14295 .MODEL DI_DDTA125TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14296 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14297 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14298 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14299 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14301 Note: The following SPICE model is for the transistor element.
\r
14302 When applying this SPICE model to your circuit simulation be certain to
\r
14303 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14304 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14306 *SRC=DDTA142JE;DI_DDTA142JE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14307 .MODEL DI_DDTA142JE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14308 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14309 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14310 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14311 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14313 Note: The following SPICE model is for the transistor element.
\r
14314 When applying this SPICE model to your circuit simulation be certain to
\r
14315 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14316 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14318 *SRC=DDTA142JU;DI_DDTA142JU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14319 .MODEL DI_DDTA142JU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14320 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14321 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14322 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14323 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14325 Note: The following SPICE model is for the transistor element.
\r
14326 When applying this SPICE model to your circuit simulation be certain to
\r
14327 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14328 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14330 *SRC=DDTA142TE;DI_DDTA142TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14331 .MODEL DI_DDTA142TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14332 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14333 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14334 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14335 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14337 Note: The following SPICE model is for the transistor element.
\r
14338 When applying this SPICE model to your circuit simulation be certain to
\r
14339 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14340 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14342 *SRC=DDTA142TU;DI_DDTA142TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14343 .MODEL DI_DDTA142TU NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14344 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14345 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14346 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14347 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14349 Note: The following SPICE model is for the transistor element.
\r
14350 When applying this SPICE model to your circuit simulation be certain to
\r
14351 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14352 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14354 *SRC=DDTA143ECA;DI_DDTA143ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14355 .MODEL DI_DDTA143ECA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14356 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14357 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14358 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14359 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14361 Note: The following SPICE model is for the transistor element.
\r
14362 When applying this SPICE model to your circuit simulation be certain to
\r
14363 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14364 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14366 *SRC=DDTA143EE;DI_DDTA143EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14367 .MODEL DI_DDTA143EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14368 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14369 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14370 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14371 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14373 Note: The following SPICE model is for the transistor element.
\r
14374 When applying this SPICE model to your circuit simulation be certain to
\r
14375 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14376 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14378 *SRC=DDTA143EKA;DI_DDTA143EKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14379 .MODEL DI_DDTA143EKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14380 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14381 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14382 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14383 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14385 Note: The following SPICE model is for the transistor element.
\r
14386 When applying this SPICE model to your circuit simulation be certain to
\r
14387 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14388 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14390 *SRC=DDTA143EUA;DI_DDTA143EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14391 .MODEL DI_DDTA143EUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14392 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14393 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14394 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14395 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14397 Note: The following SPICE model is for the transistor element.
\r
14398 When applying this SPICE model to your circuit simulation be certain to
\r
14399 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14400 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14402 *SRC=DDTA143FCA;DI_DDTA143FCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14403 .MODEL DI_DDTA143FCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14404 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14405 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14406 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14407 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14409 Note: The following SPICE model is for the transistor element.
\r
14410 When applying this SPICE model to your circuit simulation be certain to
\r
14411 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14412 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14414 *SRC=DDTA143FE;DI_DDTA143FE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14415 .MODEL DI_DDTA143FE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14416 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14417 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14418 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14419 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14421 Note: The following SPICE model is for the transistor element.
\r
14422 When applying this SPICE model to your circuit simulation be certain to
\r
14423 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14424 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14426 *SRC=DDTA143FKA;DI_DDTA143FKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14427 .MODEL DI_DDTA143FKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14428 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14429 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14430 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14431 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14433 Note: The following SPICE model is for the transistor element.
\r
14434 When applying this SPICE model to your circuit simulation be certain to
\r
14435 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14436 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14438 *SRC=DDTA143FUA;DI_DDTA143FUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14439 .MODEL DI_DDTA143FUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14440 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14441 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14442 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14443 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14445 Note: The following SPICE model is for the transistor element.
\r
14446 When applying this SPICE model to your circuit simulation be certain to
\r
14447 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14448 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14450 *SRC=DDTA143TCA;DI_DDTA143TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14451 .MODEL DI_DDTA143TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14452 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14453 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14454 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14455 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14457 Note: The following SPICE model is for the transistor element.
\r
14458 When applying this SPICE model to your circuit simulation be certain to
\r
14459 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14460 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14462 *SRC=DDTA143TE;DI_DDTA143TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14463 .MODEL DI_DDTA143TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14464 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14465 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14466 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14467 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14469 Note: The following SPICE model is for the transistor element.
\r
14470 When applying this SPICE model to your circuit simulation be certain to
\r
14471 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14472 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14474 *SRC=DDTA143TKA;DI_DDTA143TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14475 .MODEL DI_DDTA143TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14476 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14477 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14478 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14479 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14481 Note: The following SPICE model is for the transistor element.
\r
14482 When applying this SPICE model to your circuit simulation be certain to
\r
14483 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14484 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14486 *SRC=DDTA143TUA;DI_DDTA143TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14487 .MODEL DI_DDTA143TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14488 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14489 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14490 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14491 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14493 Note: The following SPICE model is for the transistor element.
\r
14494 When applying this SPICE model to your circuit simulation be certain to
\r
14495 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14496 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14498 *SRC=DDTA143XCA;DI_DDTA143XCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14499 .MODEL DI_DDTA143XCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14500 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14501 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14502 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14503 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14505 Note: The following SPICE model is for the transistor element.
\r
14506 When applying this SPICE model to your circuit simulation be certain to
\r
14507 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14508 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14510 *SRC=DDTA143XE;DI_DDTA143XE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14511 .MODEL DI_DDTA143XE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14512 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14513 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14514 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14515 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14517 Note: The following SPICE model is for the transistor element.
\r
14518 When applying this SPICE model to your circuit simulation be certain to
\r
14519 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14520 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14522 *SRC=DDTA143XKA;DI_DDTA143XKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14523 .MODEL DI_DDTA143XKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14524 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14525 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14526 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14527 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14529 Note: The following SPICE model is for the transistor element.
\r
14530 When applying this SPICE model to your circuit simulation be certain to
\r
14531 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14532 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14534 *SRC=DDTA143XUA;DI_DDTA143XUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14535 .MODEL DI_DDTA143XUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14536 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14537 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14538 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14539 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14541 Note: The following SPICE model is for the transistor element.
\r
14542 When applying this SPICE model to your circuit simulation be certain to
\r
14543 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14544 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14546 *SRC=DDTA143ZCA;DI_DDTA143ZCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14547 .MODEL DI_DDTA143ZCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14548 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14549 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14550 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14551 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14553 Note: The following SPICE model is for the transistor element.
\r
14554 When applying this SPICE model to your circuit simulation be certain to
\r
14555 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14556 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14558 *SRC=DDTA143ZE;DI_DDTA143ZE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14559 .MODEL DI_DDTA143ZE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14560 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14561 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14562 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14563 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14565 Note: The following SPICE model is for the transistor element.
\r
14566 When applying this SPICE model to your circuit simulation be certain to
\r
14567 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14568 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14570 *SRC=DDTA143ZKA;DI_DDTA143ZKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14571 .MODEL DI_DDTA143ZKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14572 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14573 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14574 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14575 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14577 Note: The following SPICE model is for the transistor element.
\r
14578 When applying this SPICE model to your circuit simulation be certain to
\r
14579 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14580 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14582 *SRC=DDTA143ZUA;DI_DDTA143ZUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14583 .MODEL DI_DDTA143ZUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14584 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14585 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14586 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14587 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14589 Note: The following SPICE model is for the transistor element.
\r
14590 When applying this SPICE model to your circuit simulation be certain to
\r
14591 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14592 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14594 *SRC=DDTA144ECA;DI_DDTA144ECA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14595 .MODEL DI_DDTA144ECA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14596 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14597 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14598 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14599 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14601 Note: The following SPICE model is for the transistor element.
\r
14602 When applying this SPICE model to your circuit simulation be certain to
\r
14603 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14604 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14606 *SRC=DDTA144EE;DI_DDTA144EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14607 .MODEL DI_DDTA144EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14608 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14609 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14610 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14611 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14613 Note: The following SPICE model is for the transistor element.
\r
14614 When applying this SPICE model to your circuit simulation be certain to
\r
14615 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14616 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14618 *SRC=DDTA144EKA;DI_DDTA144EKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14619 .MODEL DI_DDTA144EKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14620 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14621 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14622 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14623 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14625 Note: The following SPICE model is for the transistor element.
\r
14626 When applying this SPICE model to your circuit simulation be certain to
\r
14627 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14628 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14630 *SRC=DDTA144EUA;DI_DDTA144EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14631 .MODEL DI_DDTA144EUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14632 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14633 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14634 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14635 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14637 Note: The following SPICE model is for the transistor element.
\r
14638 When applying this SPICE model to your circuit simulation be certain to
\r
14639 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14640 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14642 *SRC=DDTA144GCA;DI_DDTA144GCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14643 .MODEL DI_DDTA144GCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14644 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14645 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14646 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14647 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14649 Note: The following SPICE model is for the transistor element.
\r
14650 When applying this SPICE model to your circuit simulation be certain to
\r
14651 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14652 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14654 *SRC=DDTA144GE;DI_DDTA144GE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14655 .MODEL DI_DDTA144GE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14656 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14657 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14658 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14659 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14661 Note: The following SPICE model is for the transistor element.
\r
14662 When applying this SPICE model to your circuit simulation be certain to
\r
14663 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14664 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14666 *SRC=DDTA144GUA;DI_DDTA144GUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14667 .MODEL DI_DDTA144GUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14668 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14669 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14670 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14671 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14673 Note: The following SPICE model is for the transistor element.
\r
14674 When applying this SPICE model to your circuit simulation be certain to
\r
14675 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14676 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14678 *SRC=DDTA144KA;DI_DDTA144KA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14679 .MODEL DI_DDTA144KA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14680 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14681 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14682 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14683 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14685 Note: The following SPICE model is for the transistor element.
\r
14686 When applying this SPICE model to your circuit simulation be certain to
\r
14687 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14688 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14690 *SRC=DDTA144TCA;DI_DDTA144TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14691 .MODEL DI_DDTA144TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14692 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14693 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14694 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14695 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14697 Note: The following SPICE model is for the transistor element.
\r
14698 When applying this SPICE model to your circuit simulation be certain to
\r
14699 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14700 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14702 *SRC=DDTA144TE;DI_DDTA144TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14703 .MODEL DI_DDTA144TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14704 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14705 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14706 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14707 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14709 Note: The following SPICE model is for the transistor element.
\r
14710 When applying this SPICE model to your circuit simulation be certain to
\r
14711 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14712 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14714 *SRC=DDTA144TKA;DI_DDTA144TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14715 .MODEL DI_DDTA144TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14716 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14717 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14718 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14719 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14721 Note: The following SPICE model is for the transistor element.
\r
14722 When applying this SPICE model to your circuit simulation be certain to
\r
14723 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14724 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14726 *SRC=DDTA144TUA;DI_DDTA144TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14727 .MODEL DI_DDTA144TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14728 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14729 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14730 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14731 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14733 Note: The following SPICE model is for the transistor element.
\r
14734 When applying this SPICE model to your circuit simulation be certain to
\r
14735 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14736 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14738 *SRC=DDTA144VCA;DI_DDTA144VCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14739 .MODEL DI_DDTA144VCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14740 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14741 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14742 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14743 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14745 Note: The following SPICE model is for the transistor element.
\r
14746 When applying this SPICE model to your circuit simulation be certain to
\r
14747 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14748 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14750 *SRC=DDTA144VE;DI_DDTA144VE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14751 .MODEL DI_DDTA144VE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14752 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14753 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14754 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14755 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14757 Note: The following SPICE model is for the transistor element.
\r
14758 When applying this SPICE model to your circuit simulation be certain to
\r
14759 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14760 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14762 *SRC=DDTA144VKA;DI_DDTA144VKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14763 .MODEL DI_DDTA144VKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14764 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14765 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14766 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14767 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14769 Note: The following SPICE model is for the transistor element.
\r
14770 When applying this SPICE model to your circuit simulation be certain to
\r
14771 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14772 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14774 *SRC=DDTA144VUA;DI_DDTA144VUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14775 .MODEL DI_DDTA144VUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14776 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14777 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14778 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14779 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14781 Note: The following SPICE model is for the transistor element.
\r
14782 When applying this SPICE model to your circuit simulation be certain to
\r
14783 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14784 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14786 *SRC=DDTA144WCA;DI_DDTA144WCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14787 .MODEL DI_DDTA144WCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14788 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14789 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14790 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14791 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14793 Note: The following SPICE model is for the transistor element.
\r
14794 When applying this SPICE model to your circuit simulation be certain to
\r
14795 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14796 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14798 *SRC=DDTA144WE;DI_DDTA144WE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14799 .MODEL DI_DDTA144WE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14800 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14801 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14802 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14803 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14805 Note: The following SPICE model is for the transistor element.
\r
14806 When applying this SPICE model to your circuit simulation be certain to
\r
14807 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14808 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14810 *SRC=DDTA144WKA;DI_DDTA144WKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14811 .MODEL DI_DDTA144WKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14812 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14813 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14814 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14815 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14817 Note: The following SPICE model is for the transistor element.
\r
14818 When applying this SPICE model to your circuit simulation be certain to
\r
14819 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
14820 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
14822 *SRC=DDTA144WUA;DI_DDTA144WUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
14823 .MODEL DI_DDTA144WUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
14824 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
14825 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
14826 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
14827 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
14829 **************************************************************************************************************************************
\r
14830 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
14831 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
14832 20% for R2/R1 ratio tolerance.
\r
14834 *SRC=DDTB113EC;DI_DDTB113EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
14835 .MODEL DI_DDTB113EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
14836 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
14837 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
14838 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
14839 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
14840 ******************************************************************************************************************************
\r
14842 **************************************************************************************************************************************
\r
14843 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
14844 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
14845 20% for R2/R1 ratio tolerance.
\r
14847 *SRC=DDTB113EU;DI_DDTB113EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
14848 .MODEL DI_DDTB113EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
14849 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
14850 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
14851 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
14852 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
14853 ******************************************************************************************************************************
\r
14855 **************************************************************************************************************************************
\r
14856 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
14857 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
14858 20% for R2/R1 ratio tolerance.
\r
14860 *SRC=DDTB113ZC;DI_DDTB113ZC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
14861 .MODEL DI_DDTB113ZC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
14862 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
14863 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
14864 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
14865 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
14866 ******************************************************************************************************************************
\r
14868 **************************************************************************************************************************************
\r
14869 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
14870 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
14871 20% for R2/R1 ratio tolerance.
\r
14873 *SRC=DDTB113ZU;DI_DDTB113ZU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
14874 .MODEL DI_DDTB113ZU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
14875 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
14876 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
14877 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
14878 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
14879 ******************************************************************************************************************************
\r
14881 **************************************************************************************************************************************
\r
14882 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
14883 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
14884 20% for R2/R1 ratio tolerance.
\r
14886 *SRC=DDTB114EC;DI_DDTB114EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
14887 .MODEL DI_DDTB114EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
14888 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
14889 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
14890 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
14891 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
14892 ******************************************************************************************************************************
\r
14894 **************************************************************************************************************************************
\r
14895 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
14896 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
14897 20% for R2/R1 ratio tolerance.
\r
14899 *SRC=DDTB114EU;DI_DDTB114EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
14900 .MODEL DI_DDTB114EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
14901 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
14902 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
14903 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
14904 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
14905 ******************************************************************************************************************************
\r
14907 **************************************************************************************************************************************
\r
14908 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
14909 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
14910 20% for R2/R1 ratio tolerance.
\r
14912 *SRC=DDTB114GC;DI_DDTB114GC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
14913 .MODEL DI_DDTB114GC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
14914 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
14915 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
14916 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
14917 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
14918 ******************************************************************************************************************************
\r
14920 **************************************************************************************************************************************
\r
14921 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
14922 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
14923 20% for R2/R1 ratio tolerance.
\r
14925 *SRC=DDTB114GU;DI_DDTB114GU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
14926 .MODEL DI_DDTB114GU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
14927 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
14928 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
14929 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
14930 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
14931 ******************************************************************************************************************************
\r
14933 **************************************************************************************************************************************
\r
14934 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
14935 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
14936 20% for R2/R1 ratio tolerance.
\r
14938 *SRC=DDTB114TC;DI_DDTB114TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
14939 .MODEL DI_DDTB114TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
14940 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
14941 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
14942 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
14943 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
14944 ******************************************************************************************************************************
\r
14946 **************************************************************************************************************************************
\r
14947 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
14948 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
14949 20% for R2/R1 ratio tolerance.
\r
14951 *SRC=DDTB114TU;DI_DDTB114TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
14952 .MODEL DI_DDTB114TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
14953 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
14954 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
14955 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
14956 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
14957 ******************************************************************************************************************************
\r
14959 **************************************************************************************************************************************
\r
14960 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
14961 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
14962 20% for R2/R1 ratio tolerance.
\r
14964 *SRC=DDTB122JC;DI_DDTB122JC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
14965 .MODEL DI_DDTB122JC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
14966 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
14967 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
14968 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
14969 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
14970 ******************************************************************************************************************************
\r
14972 **************************************************************************************************************************************
\r
14973 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
14974 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
14975 20% for R2/R1 ratio tolerance.
\r
14977 *SRC=DDTB122JU;DI_DDTB122JU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
14978 .MODEL DI_DDTB122JU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
14979 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
14980 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
14981 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
14982 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
14983 ******************************************************************************************************************************
\r
14985 **************************************************************************************************************************************
\r
14986 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
14987 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
14988 20% for R2/R1 ratio tolerance.
\r
14990 *SRC=DDTB122LC;DI_DDTB122LC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
14991 .MODEL DI_DDTB122LC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
14992 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
14993 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
14994 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
14995 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
14996 ******************************************************************************************************************************
\r
14998 **************************************************************************************************************************************
\r
14999 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
15000 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
15001 20% for R2/R1 ratio tolerance.
\r
15003 *SRC=DDTB122LU;DI_DDTB122LU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
15004 .MODEL DI_DDTB122LU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
15005 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
15006 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
15007 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
15008 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
15009 ******************************************************************************************************************************
\r
15011 **************************************************************************************************************************************
\r
15012 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
15013 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
15014 20% for R2/R1 ratio tolerance.
\r
15016 *SRC=DDTB122TC;DI_DDTB122TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
15017 .MODEL DI_DDTB122TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
15018 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
15019 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
15020 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
15021 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
15022 ******************************************************************************************************************************
\r
15024 **************************************************************************************************************************************
\r
15025 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
15026 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
15027 20% for R2/R1 ratio tolerance.
\r
15029 *SRC=DDTB122TU;DI_DDTB122TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
15030 .MODEL DI_DDTB122TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
15031 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
15032 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
15033 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
15034 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
15035 ******************************************************************************************************************************
\r
15037 **************************************************************************************************************************************
\r
15038 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
15039 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
15040 20% for R2/R1 ratio tolerance.
\r
15042 *SRC=DDTB123EC;DI_DDTB123EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
15043 .MODEL DI_DDTB123EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
15044 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
15045 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
15046 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
15047 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
15048 ******************************************************************************************************************************
\r
15050 **************************************************************************************************************************************
\r
15051 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
15052 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
15053 20% for R2/R1 ratio tolerance.
\r
15055 *SRC=DDTB123EU;DI_DDTB123EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
15056 .MODEL DI_DDTB123EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
15057 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
15058 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
15059 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
15060 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
15061 ******************************************************************************************************************************
\r
15063 **************************************************************************************************************************************
\r
15064 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
15065 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
15066 20% for R2/R1 ratio tolerance.
\r
15068 *SRC=DDTB123TC;DI_DDTB123TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
15069 .MODEL DI_DDTB123TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
15070 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
15071 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
15072 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
15073 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
15074 ******************************************************************************************************************************
\r
15076 **************************************************************************************************************************************
\r
15077 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
15078 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
15079 20% for R2/R1 ratio tolerance.
\r
15081 *SRC=DDTB123TU;DI_DDTB123TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
15082 .MODEL DI_DDTB123TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
15083 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
15084 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
15085 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
15086 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
15087 ******************************************************************************************************************************
\r
15089 **************************************************************************************************************************************
\r
15090 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
15091 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
15092 20% for R2/R1 ratio tolerance.
\r
15094 *SRC=DDTB123YC;DI_DDTB123YC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
15095 .MODEL DI_DDTB123YC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
15096 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
15097 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
15098 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
15099 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
15100 ******************************************************************************************************************************
\r
15102 **************************************************************************************************************************************
\r
15103 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
15104 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
15105 20% for R2/R1 ratio tolerance.
\r
15107 *SRC=DDTB123YU;DI_DDTB123YU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
15108 .MODEL DI_DDTB123YU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
15109 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
15110 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
15111 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
15112 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
15113 ******************************************************************************************************************************
\r
15115 **************************************************************************************************************************************
\r
15116 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
15117 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
15118 20% for R2/R1 ratio tolerance.
\r
15120 *SRC=DDTB133HC;DI_DDTB133HC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
15121 .MODEL DI_DDTB133HC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
15122 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
15123 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
15124 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
15125 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
15126 ******************************************************************************************************************************
\r
15128 **************************************************************************************************************************************
\r
15129 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
15130 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
15131 20% for R2/R1 ratio tolerance.
\r
15133 *SRC=DDTB133HU;DI_DDTB133HU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
15134 .MODEL DI_DDTB133HU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
15135 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
15136 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
15137 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
15138 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
15139 ******************************************************************************************************************************
\r
15141 **************************************************************************************************************************************
\r
15142 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
15143 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
15144 20% for R2/R1 ratio tolerance.
\r
15146 *SRC=DDTB142JC;DI_DDTB142JC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
15147 .MODEL DI_DDTB142JC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
15148 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
15149 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
15150 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
15151 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
15152 ******************************************************************************************************************************
\r
15154 **************************************************************************************************************************************
\r
15155 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
15156 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
15157 20% for R2/R1 ratio tolerance.
\r
15159 *SRC=DDTB142JU;DI_DDTB142JU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
15160 .MODEL DI_DDTB142JU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
15161 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
15162 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
15163 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
15164 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
15165 ******************************************************************************************************************************
\r
15167 **************************************************************************************************************************************
\r
15168 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
15169 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
15170 20% for R2/R1 ratio tolerance.
\r
15172 *SRC=DDTB142TC;DI_DDTB142TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
15173 .MODEL DI_DDTB142TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
15174 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
15175 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
15176 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
15177 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
15178 ******************************************************************************************************************************
\r
15180 **************************************************************************************************************************************
\r
15181 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
15182 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
15183 20% for R2/R1 ratio tolerance.
\r
15185 *SRC=DDTB142TU;DI_DDTB142TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
15186 .MODEL DI_DDTB142TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
15187 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
15188 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
15189 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
15190 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
15191 ******************************************************************************************************************************
\r
15193 **************************************************************************************************************************************
\r
15194 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
15195 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
15196 20% for R2/R1 ratio tolerance.
\r
15198 *SRC=DDTB143EC;DI_DDTB143EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
15199 .MODEL DI_DDTB143EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
15200 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
15201 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
15202 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
15203 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
15204 ******************************************************************************************************************************
\r
15206 **************************************************************************************************************************************
\r
15207 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
15208 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
15209 20% for R2/R1 ratio tolerance.
\r
15211 *SRC=DDTB143EU;DI_DDTB143EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
15212 .MODEL DI_DDTB143EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
15213 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
15214 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
15215 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
15216 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
15217 ******************************************************************************************************************************
\r
15219 **************************************************************************************************************************************
\r
15220 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
15221 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
15222 20% for R2/R1 ratio tolerance.
\r
15224 *SRC=DDTB143TC;DI_DDTB143TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
15225 .MODEL DI_DDTB143TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
15226 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
15227 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
15228 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
15229 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
15230 ******************************************************************************************************************************
\r
15232 **************************************************************************************************************************************
\r
15233 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
15234 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
15235 20% for R2/R1 ratio tolerance.
\r
15237 *SRC=DDTB143TU;DI_DDTB143TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
15238 .MODEL DI_DDTB143TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
15239 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
15240 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
15241 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
15242 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
15243 ******************************************************************************************************************************
\r
15245 Note: The following SPICE model is for the transistor element.
\r
15246 When applying this SPICE model to your circuit simulation be certain to
\r
15247 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15248 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15250 *SRC=DDTC113TCA;DI_DDTC113TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15251 .MODEL DI_DDTC113TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15252 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15253 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15254 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15255 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15257 Note: The following SPICE model is for the transistor element.
\r
15258 When applying this SPICE model to your circuit simulation be certain to
\r
15259 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15260 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15262 *SRC=DDTC113TE;DI_DDTC113TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15263 .MODEL DI_DDTC113TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15264 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15265 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15266 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15267 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15269 Note: The following SPICE model is for the transistor element.
\r
15270 When applying this SPICE model to your circuit simulation be certain to
\r
15271 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15272 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15274 *SRC=DDTC113TKA;DI_DDTC113TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15275 .MODEL DI_DDTC113TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15276 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15277 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15278 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15279 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15281 Note: The following SPICE model is for the transistor element.
\r
15282 When applying this SPICE model to your circuit simulation be certain to
\r
15283 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15284 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15286 *SRC=DDTC113TUA;DI_DDTC113TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15287 .MODEL DI_DDTC113TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15288 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15289 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15290 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15291 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15293 Note: The following SPICE model is for the transistor element.
\r
15294 When applying this SPICE model to your circuit simulation be certain to
\r
15295 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15296 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15298 *SRC=DDTC113ZCA;DI_DDTC113ZCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15299 .MODEL DI_DDTC113ZCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15300 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15301 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15302 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15303 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15305 Note: The following SPICE model is for the transistor element.
\r
15306 When applying this SPICE model to your circuit simulation be certain to
\r
15307 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15308 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15310 *SRC=DDTC113ZE;DI_DDTC113ZE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15311 .MODEL DI_DDTC113ZE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15312 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15313 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15314 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15315 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15317 Note: The following SPICE model is for the transistor element.
\r
15318 When applying this SPICE model to your circuit simulation be certain to
\r
15319 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15320 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15322 *SRC=DDTC113ZKA;DI_DDTC113ZKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15323 .MODEL DI_DDTC113ZKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15324 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15325 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15326 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15327 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15329 *SRC=DDTC113ZUA;DI_DDTC113ZUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15330 .MODEL DI_DDTC113ZUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15331 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15332 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15333 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15334 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15336 Note: The following SPICE model is for the transistor element.
\r
15337 When applying this SPICE model to your circuit simulation be certain to
\r
15338 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15339 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15341 *SRC=DDTC114EE;DI_DDTC114EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15342 .MODEL DI_DDTC114EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15343 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15344 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15345 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15346 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15348 ******************************************************************************************************************************************
\r
15349 Note: The following SPICE model is for the transistor element.
\r
15350 When applying this SPICE model to your circuit simulation be certain
\r
15351 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
15352 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
15355 *SRC=DDTC114EKA;DI_DDTC114EKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15356 .MODEL DI_DDTC114EKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
15357 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
15358 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
15359 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
15360 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
15361 *****************************************************************************************************************************************
\r
15363 ******************************************************************************************************************************************
\r
15364 Note: The following SPICE model is for the transistor element.
\r
15365 When applying this SPICE model to your circuit simulation be certain
\r
15366 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
15367 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
15370 *SRC=DDTC114EUA;DI_DDTC114EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15371 .MODEL DI_DDTC114EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
15372 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
15373 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
15374 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
15375 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
15376 *****************************************************************************************************************************************
\r
15378 ******************************************************************************************************************************************
\r
15379 Note: The following SPICE model is for the transistor element.
\r
15380 When applying this SPICE model to your circuit simulation be certain
\r
15381 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
15382 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
15385 *SRC=DDTC114GE;DI_DDTC114GE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15386 .MODEL DI_DDTC114GE NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
15387 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
15388 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
15389 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
15390 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
15391 *****************************************************************************************************************************************
\r
15393 ******************************************************************************************************************************************
\r
15394 Note: The following SPICE model is for the transistor element.
\r
15395 When applying this SPICE model to your circuit simulation be certain
\r
15396 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
15397 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
15400 *SRC=DDTC114GKA;DI_DDTC114GKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15401 .MODEL DI_DDTC114GKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
15402 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
15403 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
15404 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
15405 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
15406 *****************************************************************************************************************************************
\r
15408 ******************************************************************************************************************************************
\r
15409 Note: The following SPICE model is for the transistor element.
\r
15410 When applying this SPICE model to your circuit simulation be certain
\r
15411 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
15412 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
15415 *SRC=DDTC114GUA;DI_DDTC114GUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15416 .MODEL DI_DDTC114GUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
15417 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
15418 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
15419 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
15420 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
15421 *****************************************************************************************************************************************
\r
15423 Note: The following SPICE model is for the transistor element.
\r
15424 When applying this SPICE model to your circuit simulation be certain to
\r
15425 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15426 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15428 *SRC=DDTC114TCA;DI_DDTC114TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15429 .MODEL DI_DDTC114TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15430 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15431 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15432 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15433 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15435 Note: The following SPICE model is for the transistor element.
\r
15436 When applying this SPICE model to your circuit simulation be certain to
\r
15437 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15438 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15440 *SRC=DDTC114TE;DI_DDTC114TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15441 .MODEL DI_DDTC114TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15442 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15443 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15444 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15445 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15447 Note: The following SPICE model is for the transistor element.
\r
15448 When applying this SPICE model to your circuit simulation be certain to
\r
15449 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15450 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15452 *SRC=DDTC114TKA;DI_DDTC114TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15453 .MODEL DI_DDTC114TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15454 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15455 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15456 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15457 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15459 Note: The following SPICE model is for the transistor element.
\r
15460 When applying this SPICE model to your circuit simulation be certain to
\r
15461 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15462 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15464 *SRC=DDTC114TUA;DI_DDTC114TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15465 .MODEL DI_DDTC114TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15466 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15467 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15468 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15469 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15471 Note: The following SPICE model is for the transistor element.
\r
15472 When applying this SPICE model to your circuit simulation be certain to
\r
15473 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15474 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15476 *SRC=DDTC114WCA;DI_DDTC114WCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15477 .MODEL DI_DDTC114WCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15478 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15479 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15480 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15481 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15483 Note: The following SPICE model is for the transistor element.
\r
15484 When applying this SPICE model to your circuit simulation be certain to
\r
15485 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15486 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15488 *SRC=DDTC114WE;DI_DDTC114WE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15489 .MODEL DI_DDTC114WE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15490 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15491 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15492 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15493 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15495 Note: The following SPICE model is for the transistor element.
\r
15496 When applying this SPICE model to your circuit simulation be certain to
\r
15497 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15498 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15500 *SRC=DDTC114WKA;DI_DDTC114WKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15501 .MODEL DI_DDTC114WKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15502 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15503 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15504 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15505 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15507 Note: The following SPICE model is for the transistor element.
\r
15508 When applying this SPICE model to your circuit simulation be certain to
\r
15509 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15510 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15512 *SRC=DDTC114WUA;DI_DDTC114WUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15513 .MODEL DI_DDTC114WUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15514 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15515 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15516 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15517 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15519 Note: The following SPICE model is for the transistor element.
\r
15520 When applying this SPICE model to your circuit simulation be certain to
\r
15521 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15522 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15524 *SRC=DDTC114YCA;DI_DDTC114YCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15525 .MODEL DI_DDTC114YCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15526 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15527 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15528 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15529 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15531 Note: The following SPICE model is for the transistor element.
\r
15532 When applying this SPICE model to your circuit simulation be certain to
\r
15533 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15534 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15536 *SRC=DDTC114YE;DI_DDTC114YE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15537 .MODEL DI_DDTC114YE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15538 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15539 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15540 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15541 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15543 Note: The following SPICE model is for the transistor element.
\r
15544 When applying this SPICE model to your circuit simulation be certain to
\r
15545 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15546 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15548 *SRC=DDTC114YKA;DI_DDTC114YKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15549 .MODEL DI_DDTC114YKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15550 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15551 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15552 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15553 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15555 Note: The following SPICE model is for the transistor element.
\r
15556 When applying this SPICE model to your circuit simulation be certain to
\r
15557 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15558 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15560 *SRC=DDTC114YUA;DI_DDTC114YUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15561 .MODEL DI_DDTC114YUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15562 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15563 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15564 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15565 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15567 Note: The following SPICE model is for the transistor element.
\r
15568 When applying this SPICE model to your circuit simulation be certain to
\r
15569 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15570 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15572 *SRC=DDTC115EE;DI_DDTC115EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15573 .MODEL DI_DDTC115EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15574 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15575 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15576 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15577 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15579 ******************************************************************************************************************************************
\r
15580 Note: The following SPICE model is for the transistor element.
\r
15581 When applying this SPICE model to your circuit simulation be certain
\r
15582 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
15583 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
15586 *SRC=DDTC115EKA;DI_DDTC115EKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15587 .MODEL DI_DDTC115EKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
15588 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
15589 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
15590 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
15591 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
15592 *****************************************************************************************************************************************
\r
15594 ******************************************************************************************************************************************
\r
15595 Note: The following SPICE model is for the transistor element.
\r
15596 When applying this SPICE model to your circuit simulation be certain
\r
15597 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
15598 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
15601 *SRC=DDTC115EUA;DI_DDTC115EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15602 .MODEL DI_DDTC115EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
15603 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
15604 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
15605 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
15606 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
15607 *****************************************************************************************************************************************
\r
15609 ******************************************************************************************************************************************
\r
15610 Note: The following SPICE model is for the transistor element.
\r
15611 When applying this SPICE model to your circuit simulation be certain
\r
15612 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
15613 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
15616 *SRC=DDTC115GE;DI_DDTC115GE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15617 .MODEL DI_DDTC115GE NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
15618 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
15619 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
15620 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
15621 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
15622 *****************************************************************************************************************************************
\r
15624 ******************************************************************************************************************************************
\r
15625 Note: The following SPICE model is for the transistor element.
\r
15626 When applying this SPICE model to your circuit simulation be certain
\r
15627 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
15628 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
15631 *SRC=DDTC115GKA;DI_DDTC115GKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15632 .MODEL DI_DDTC115GKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
15633 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
15634 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
15635 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
15636 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
15637 *****************************************************************************************************************************************
\r
15639 ******************************************************************************************************************************************
\r
15640 Note: The following SPICE model is for the transistor element.
\r
15641 When applying this SPICE model to your circuit simulation be certain
\r
15642 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
15643 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
15646 *SRC=DDTC115GUA;DI_DDTC115GUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15647 .MODEL DI_DDTC115GUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
15648 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
15649 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
15650 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
15651 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
15652 *****************************************************************************************************************************************
\r
15654 Note: The following SPICE model is for the transistor element.
\r
15655 When applying this SPICE model to your circuit simulation be certain to
\r
15656 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15657 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15659 *SRC=DDTC115TCA;DI_DDTC115TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15660 .MODEL DI_DDTC115TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15661 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15662 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15663 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15664 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15666 Note: The following SPICE model is for the transistor element.
\r
15667 When applying this SPICE model to your circuit simulation be certain to
\r
15668 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15669 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15671 *SRC=DDTC115TE;DI_DDTC115TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15672 .MODEL DI_DDTC115TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15673 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15674 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15675 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15676 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15678 Note: The following SPICE model is for the transistor element.
\r
15679 When applying this SPICE model to your circuit simulation be certain to
\r
15680 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15681 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15683 *SRC=DDTC115TKA;DI_DDTC115TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15684 .MODEL DI_DDTC115TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15685 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15686 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15687 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15688 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15690 Note: The following SPICE model is for the transistor element.
\r
15691 When applying this SPICE model to your circuit simulation be certain to
\r
15692 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15693 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15695 *SRC=DDTC115TUA;DI_DDTC115TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15696 .MODEL DI_DDTC115TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15697 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15698 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15699 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15700 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15702 ******************************************************************************************************************************************
\r
15703 Note: The following SPICE model is for the transistor element.
\r
15704 When applying this SPICE model to your circuit simulation be certain
\r
15705 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
15706 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
15709 *SRC=DDTC124GE;DI_DDTC124GE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15710 .MODEL DI_DDTC124GE NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
15711 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
15712 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
15713 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
15714 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
15715 *****************************************************************************************************************************************
\r
15717 ******************************************************************************************************************************************
\r
15718 Note: The following SPICE model is for the transistor element.
\r
15719 When applying this SPICE model to your circuit simulation be certain
\r
15720 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
15721 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
15724 *SRC=DDTC122LU;DI_DDTC122LU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15725 .MODEL DI_DDTC122LU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
15726 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
15727 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
15728 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
15729 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
15730 *****************************************************************************************************************************************
\r
15732 ******************************************************************************************************************************************
\r
15733 Note: The following SPICE model is for the transistor element.
\r
15734 When applying this SPICE model to your circuit simulation be certain
\r
15735 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
15736 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
15739 *SRC=DDTC142JE;DI_DDTC142JE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15740 .MODEL DI_DDTC142JE NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
15741 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
15742 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
15743 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
15744 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
15745 *****************************************************************************************************************************************
\r
15747 ******************************************************************************************************************************************
\r
15748 Note: The following SPICE model is for the transistor element.
\r
15749 When applying this SPICE model to your circuit simulation be certain
\r
15750 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
15751 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
15754 *SRC=DDTC122TU;DI_DDTC122TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15755 .MODEL DI_DDTC122TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
15756 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
15757 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
15758 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
15759 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
15760 *****************************************************************************************************************************************
\r
15762 Note: The following SPICE model is for the transistor element.
\r
15763 When applying this SPICE model to your circuit simulation be certain to
\r
15764 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15765 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15767 *SRC=DDTC123EE;DI_DDTC123EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15768 .MODEL DI_DDTC123EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15769 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15770 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15771 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15772 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15774 ******************************************************************************************************************************************
\r
15775 Note: The following SPICE model is for the transistor element.
\r
15776 When applying this SPICE model to your circuit simulation be certain
\r
15777 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
15778 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
15781 *SRC=DDTC123EKA;DI_DDTC123EKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15782 .MODEL DI_DDTC123EKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
15783 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
15784 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
15785 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
15786 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
15787 *****************************************************************************************************************************************
\r
15789 ******************************************************************************************************************************************
\r
15790 Note: The following SPICE model is for the transistor element.
\r
15791 When applying this SPICE model to your circuit simulation be certain
\r
15792 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
15793 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
15796 *SRC=DDTC123EUA;DI_DDTC123EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15797 .MODEL DI_DDTC123EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
15798 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
15799 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
15800 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
15801 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
15802 *****************************************************************************************************************************************
\r
15804 Note: The following SPICE model is for the transistor element.
\r
15805 When applying this SPICE model to your circuit simulation be certain to
\r
15806 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15807 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15809 *SRC=DDTC123JCA;DI_DDTC123JCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15810 .MODEL DI_DDTC123JCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15811 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15812 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15813 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15814 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15816 Note: The following SPICE model is for the transistor element.
\r
15817 When applying this SPICE model to your circuit simulation be certain to
\r
15818 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15819 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15821 *SRC=DDTC123JE;DI_DDTC123JE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15822 .MODEL DI_DDTC123JE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15823 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15824 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15825 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15826 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15828 Note: The following SPICE model is for the transistor element.
\r
15829 When applying this SPICE model to your circuit simulation be certain to
\r
15830 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15831 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15833 *SRC=DDTC123JKA;DI_DDTC123JKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15834 .MODEL DI_DDTC123JKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15835 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15836 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15837 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15838 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15840 Note: The following SPICE model is for the transistor element.
\r
15841 When applying this SPICE model to your circuit simulation be certain to
\r
15842 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15843 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15845 *SRC=DDTC123JUA;DI_DDTC123JUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15846 .MODEL DI_DDTC123JUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15847 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15848 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15849 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15850 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15852 Note: The following SPICE model is for the transistor element.
\r
15853 When applying this SPICE model to your circuit simulation be certain to
\r
15854 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15855 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15857 *SRC=DDTC123TCA;DI_DDTC123TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15858 .MODEL DI_DDTC123TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15859 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15860 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15861 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15862 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15864 Note: The following SPICE model is for the transistor element.
\r
15865 When applying this SPICE model to your circuit simulation be certain to
\r
15866 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15867 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15869 *SRC=DDTC123TE;DI_DDTC123TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15870 .MODEL DI_DDTC123TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15871 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15872 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15873 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15874 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15876 Note: The following SPICE model is for the transistor element.
\r
15877 When applying this SPICE model to your circuit simulation be certain to
\r
15878 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15879 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15881 *SRC=DDTC123TKA;DI_DDTC123TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15882 .MODEL DI_DDTC123TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15883 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15884 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15885 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15886 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15888 Note: The following SPICE model is for the transistor element.
\r
15889 When applying this SPICE model to your circuit simulation be certain to
\r
15890 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15891 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15893 *SRC=DDTC123TUA;DI_DDTC123TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15894 .MODEL DI_DDTC123TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15895 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15896 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15897 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15898 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15900 Note: The following SPICE model is for the transistor element.
\r
15901 When applying this SPICE model to your circuit simulation be certain to
\r
15902 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15903 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15905 *SRC=DDTC123YCA;DI_DDTC123YCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15906 .MODEL DI_DDTC123YCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15907 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15908 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15909 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15910 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15912 Note: The following SPICE model is for the transistor element.
\r
15913 When applying this SPICE model to your circuit simulation be certain to
\r
15914 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15915 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15917 *SRC=DDTC123YE;DI_DDTC123YE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15918 .MODEL DI_DDTC123YE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15919 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15920 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15921 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15922 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15924 Note: The following SPICE model is for the transistor element.
\r
15925 When applying this SPICE model to your circuit simulation be certain to
\r
15926 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15927 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15929 *SRC=DDTC123YKA;DI_DDTC123YKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15930 .MODEL DI_DDTC123YKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15931 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15932 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15933 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15934 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15936 *SRC=DDTC123YUA;DI_DDTC123YUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15937 .MODEL DI_DDTC123YUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15938 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15939 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15940 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15941 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15943 Note: The following SPICE model is for the transistor element.
\r
15944 When applying this SPICE model to your circuit simulation be certain to
\r
15945 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
15946 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
15948 *SRC=DDTC124EE;DI_DDTC124EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15949 .MODEL DI_DDTC124EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
15950 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
15951 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
15952 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
15953 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
15955 ******************************************************************************************************************************************
\r
15956 Note: The following SPICE model is for the transistor element.
\r
15957 When applying this SPICE model to your circuit simulation be certain
\r
15958 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
15959 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
15962 *SRC=DDTC144EKA;DI_DDTC144EKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15963 .MODEL DI_DDTC144EKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
15964 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
15965 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
15966 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
15967 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
15968 *****************************************************************************************************************************************
\r
15970 ******************************************************************************************************************************************
\r
15971 Note: The following SPICE model is for the transistor element.
\r
15972 When applying this SPICE model to your circuit simulation be certain
\r
15973 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
15974 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
15977 *SRC=DDTC124EUA;DI_DDTC124EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15978 .MODEL DI_DDTC124EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
15979 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
15980 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
15981 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
15982 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
15983 *****************************************************************************************************************************************
\r
15985 ******************************************************************************************************************************************
\r
15986 Note: The following SPICE model is for the transistor element.
\r
15987 When applying this SPICE model to your circuit simulation be certain
\r
15988 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
15989 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
15992 *SRC=DDTC124GE;DI_DDTC124GE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
15993 .MODEL DI_DDTC124GE NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
15994 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
15995 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
15996 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
15997 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
15998 *****************************************************************************************************************************************
\r
16000 ******************************************************************************************************************************************
\r
16001 Note: The following SPICE model is for the transistor element.
\r
16002 When applying this SPICE model to your circuit simulation be certain
\r
16003 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
16004 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
16007 *SRC=DDTC124GKA;DI_DDTC124GKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16008 .MODEL DI_DDTC124GKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
16009 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
16010 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
16011 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
16012 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
16013 *****************************************************************************************************************************************
\r
16015 ******************************************************************************************************************************************
\r
16016 Note: The following SPICE model is for the transistor element.
\r
16017 When applying this SPICE model to your circuit simulation be certain
\r
16018 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
16019 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
16022 *SRC=DDTC124GUA;DI_DDTC124GUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16023 .MODEL DI_DDTC124GUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
16024 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
16025 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
16026 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
16027 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
16028 *****************************************************************************************************************************************
\r
16030 Note: The following SPICE model is for the transistor element.
\r
16031 When applying this SPICE model to your circuit simulation be certain to
\r
16032 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16033 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16035 *SRC=DDTC124TCA;DI_DDTC124TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16036 .MODEL DI_DDTC124TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16037 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16038 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16039 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16040 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16042 Note: The following SPICE model is for the transistor element.
\r
16043 When applying this SPICE model to your circuit simulation be certain to
\r
16044 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16045 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16047 *SRC=DDTC124TE;DI_DDTC124TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16048 .MODEL DI_DDTC124TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16049 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16050 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16051 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16052 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16054 Note: The following SPICE model is for the transistor element.
\r
16055 When applying this SPICE model to your circuit simulation be certain to
\r
16056 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16057 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16059 *SRC=DDTC124TKA;DI_DDTC124TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16060 .MODEL DI_DDTC124TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16061 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16062 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16063 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16064 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16066 Note: The following SPICE model is for the transistor element.
\r
16067 When applying this SPICE model to your circuit simulation be certain to
\r
16068 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16069 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16071 *SRC=DDTC124TUA;DI_DDTC124TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16072 .MODEL DI_DDTC124TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16073 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16074 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16075 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16076 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16078 Note: The following SPICE model is for the transistor element.
\r
16079 When applying this SPICE model to your circuit simulation be certain to
\r
16080 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16081 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16083 *SRC=DDTC124XCA;DI_DDTC124XCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16084 .MODEL DI_DDTC124XCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16085 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16086 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16087 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16088 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16090 Note: The following SPICE model is for the transistor element.
\r
16091 When applying this SPICE model to your circuit simulation be certain to
\r
16092 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16093 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16095 *SRC=DDTC124XE;DI_DDTC124XE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16096 .MODEL DI_DDTC124XE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16097 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16098 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16099 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16100 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16102 Note: The following SPICE model is for the transistor element.
\r
16103 When applying this SPICE model to your circuit simulation be certain to
\r
16104 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16105 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16107 *SRC=DDTC124XKA;DI_DDTC124XKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16108 .MODEL DI_DDTC124XKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16109 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16110 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16111 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16112 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16114 Note: The following SPICE model is for the transistor element.
\r
16115 When applying this SPICE model to your circuit simulation be certain to
\r
16116 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16117 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16119 *SRC=DDTC124XUA;DI_DDTC124XUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16120 .MODEL DI_DDTC124XUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16121 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16122 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16123 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16124 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16126 Note: The following SPICE model is for the transistor element.
\r
16127 When applying this SPICE model to your circuit simulation be certain to
\r
16128 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16129 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16131 *SRC=DDTC125TCA;DI_DDTC125TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16132 .MODEL DI_DDTC125TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16133 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16134 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16135 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16136 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16138 Note: The following SPICE model is for the transistor element.
\r
16139 When applying this SPICE model to your circuit simulation be certain to
\r
16140 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16141 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16143 *SRC=DDTC125TE;DI_DDTC125TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16144 .MODEL DI_DDTC125TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16145 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16146 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16147 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16148 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16150 Note: The following SPICE model is for the transistor element.
\r
16151 When applying this SPICE model to your circuit simulation be certain to
\r
16152 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16153 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16155 *SRC=DDTC125TKA;DI_DDTC125TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16156 .MODEL DI_DDTC125TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16157 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16158 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16159 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16160 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16162 Note: The following SPICE model is for the transistor element.
\r
16163 When applying this SPICE model to your circuit simulation be certain to
\r
16164 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16165 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16167 *SRC=DDTC125TUA;DI_DDTC125TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16168 .MODEL DI_DDTC125TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16169 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16170 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16171 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16172 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16174 ******************************************************************************************************************************************
\r
16175 Note: The following SPICE model is for the transistor element.
\r
16176 When applying this SPICE model to your circuit simulation be certain
\r
16177 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
16178 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
16181 *SRC=DDTC122LE;DI_DDTC122LE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16182 .MODEL DI_DDTC122LE NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
16183 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
16184 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
16185 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
16186 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
16187 *****************************************************************************************************************************************
\r
16189 ******************************************************************************************************************************************
\r
16190 Note: The following SPICE model is for the transistor element.
\r
16191 When applying this SPICE model to your circuit simulation be certain
\r
16192 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
16193 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
16196 *SRC=DDTC122LE;DI_DDTC122LE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16197 .MODEL DI_DDTC122LE NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
16198 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
16199 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
16200 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
16201 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
16202 *****************************************************************************************************************************************
\r
16204 ******************************************************************************************************************************************
\r
16205 Note: The following SPICE model is for the transistor element.
\r
16206 When applying this SPICE model to your circuit simulation be certain
\r
16207 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
16208 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
16211 *SRC=DDTC142TE;DI_DDTC142TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16212 .MODEL DI_DDTC142TE NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
16213 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
16214 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
16215 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
16216 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
16217 *****************************************************************************************************************************************
\r
16219 ******************************************************************************************************************************************
\r
16220 Note: The following SPICE model is for the transistor element.
\r
16221 When applying this SPICE model to your circuit simulation be certain
\r
16222 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
16223 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
16226 *SRC=DDTC142TU;DI_DDTC142TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16227 .MODEL DI_DDTC142TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
16228 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
16229 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
16230 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
16231 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
16232 *****************************************************************************************************************************************
\r
16234 Note: The following SPICE model is for the transistor element.
\r
16235 When applying this SPICE model to your circuit simulation be certain to
\r
16236 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16237 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16239 *SRC=DDTC143EE;DI_DDTC143EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16240 .MODEL DI_DDTC143EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16241 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16242 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16243 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16244 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16246 ******************************************************************************************************************************************
\r
16247 Note: The following SPICE model is for the transistor element.
\r
16248 When applying this SPICE model to your circuit simulation be certain
\r
16249 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
16250 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
16253 *SRC=DDTC143EKA;DI_DDTC143EKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16254 .MODEL DI_DDTC143EKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
16255 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
16256 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
16257 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
16258 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
16259 *****************************************************************************************************************************************
\r
16261 ******************************************************************************************************************************************
\r
16262 Note: The following SPICE model is for the transistor element.
\r
16263 When applying this SPICE model to your circuit simulation be certain
\r
16264 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
16265 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
16268 *SRC=DDTC143EUA;DI_DDTC143EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16269 .MODEL DI_DDTC143EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
16270 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
16271 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
16272 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
16273 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
16274 *****************************************************************************************************************************************
\r
16276 Note: The following SPICE model is for the transistor element.
\r
16277 When applying this SPICE model to your circuit simulation be certain to
\r
16278 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16279 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16281 *SRC=DDTC143FCA;DI_DDTC143FCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16282 .MODEL DI_DDTC143FCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16283 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16284 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16285 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16286 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16288 Note: The following SPICE model is for the transistor element.
\r
16289 When applying this SPICE model to your circuit simulation be certain to
\r
16290 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16291 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16293 *SRC=DDTC143FE;DI_DDTC143FE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16294 .MODEL DI_DDTC143FE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16295 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16296 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16297 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16298 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16300 Note: The following SPICE model is for the transistor element.
\r
16301 When applying this SPICE model to your circuit simulation be certain to
\r
16302 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16303 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16305 *SRC=DDTC143FKA;DI_DDTC143FKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16306 .MODEL DI_DDTC143FKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16307 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16308 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16309 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16310 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16312 Note: The following SPICE model is for the transistor element.
\r
16313 When applying this SPICE model to your circuit simulation be certain to
\r
16314 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16315 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16317 *SRC=DDTC143FUA;DI_DDTC143FUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16318 .MODEL DI_DDTC143FUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16319 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16320 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16321 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16322 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16324 Note: The following SPICE model is for the transistor element.
\r
16325 When applying this SPICE model to your circuit simulation be certain to
\r
16326 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16327 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16329 *SRC=DDTC143TCA;DI_DDTC143TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16330 .MODEL DI_DDTC143TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16331 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16332 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16333 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16334 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16336 Note: The following SPICE model is for the transistor element.
\r
16337 When applying this SPICE model to your circuit simulation be certain to
\r
16338 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16339 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16341 *SRC=DDTC143TE;DI_DDTC143TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16342 .MODEL DI_DDTC143TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16343 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16344 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16345 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16346 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16348 Note: The following SPICE model is for the transistor element.
\r
16349 When applying this SPICE model to your circuit simulation be certain to
\r
16350 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16351 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16353 *SRC=DDTC143TKA;DI_DDTC143TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16354 .MODEL DI_DDTC143TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16355 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16356 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16357 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16358 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16360 Note: The following SPICE model is for the transistor element.
\r
16361 When applying this SPICE model to your circuit simulation be certain to
\r
16362 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16363 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16365 *SRC=DDTC143TUA;DI_DDTC143TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16366 .MODEL DI_DDTC143TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16367 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16368 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16369 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16370 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16372 Note: The following SPICE model is for the transistor element.
\r
16373 When applying this SPICE model to your circuit simulation be certain to
\r
16374 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16375 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16377 *SRC=DDTC143XCA;DI_DDTC143XCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16378 .MODEL DI_DDTC143XCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16379 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16380 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16381 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16382 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16384 Note: The following SPICE model is for the transistor element.
\r
16385 When applying this SPICE model to your circuit simulation be certain to
\r
16386 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16387 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16389 *SRC=DDTC143XE;DI_DDTC143XE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16390 .MODEL DI_DDTC143XE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16391 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16392 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16393 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16394 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16396 Note: The following SPICE model is for the transistor element.
\r
16397 When applying this SPICE model to your circuit simulation be certain to
\r
16398 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16399 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16401 *SRC=DDTC143XKA;DI_DDTC143XKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16402 .MODEL DI_DDTC143XKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16403 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16404 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16405 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16406 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16408 Note: The following SPICE model is for the transistor element.
\r
16409 When applying this SPICE model to your circuit simulation be certain to
\r
16410 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16411 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16413 *SRC=DDTC143XUA;DI_DDTC143XUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16414 .MODEL DI_DDTC143XUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16415 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16416 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16417 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16418 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16420 Note: The following SPICE model is for the transistor element.
\r
16421 When applying this SPICE model to your circuit simulation be certain to
\r
16422 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16423 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16425 *SRC=DDTC143ZCA;DI_DDTC143ZCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16426 .MODEL DI_DDTC143ZCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16427 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16428 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16429 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16430 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16432 Note: The following SPICE model is for the transistor element.
\r
16433 When applying this SPICE model to your circuit simulation be certain to
\r
16434 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16435 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16437 *SRC=DDTC143ZE;DI_DDTC143ZE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16438 .MODEL DI_DDTC143ZE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16439 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16440 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16441 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16442 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16444 Note: The following SPICE model is for the transistor element.
\r
16445 When applying this SPICE model to your circuit simulation be certain to
\r
16446 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16447 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16449 *SRC=DDTC143ZKA;DI_DDTC143ZKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16450 .MODEL DI_DDTC143ZKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16451 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16452 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16453 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16454 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16456 Note: The following SPICE model is for the transistor element.
\r
16457 When applying this SPICE model to your circuit simulation be certain to
\r
16458 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16459 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16461 *SRC=DDTC143ZUA;DI_DDTC143ZUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16462 .MODEL DI_DDTC143ZUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16463 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16464 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16465 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16466 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16468 Note: The following SPICE model is for the transistor element.
\r
16469 When applying this SPICE model to your circuit simulation be certain to
\r
16470 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16471 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16473 *SRC=DDTC144EE;DI_DDTC144EE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16474 .MODEL DI_DDTC144EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16475 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16476 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16477 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16478 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16480 ******************************************************************************************************************************************
\r
16481 Note: The following SPICE model is for the transistor element.
\r
16482 When applying this SPICE model to your circuit simulation be certain
\r
16483 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
16484 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
16487 *SRC=DDTC144EKA;DI_DDTC144EKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16488 .MODEL DI_DDTC144EKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
16489 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
16490 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
16491 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
16492 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
16493 *****************************************************************************************************************************************
\r
16495 ******************************************************************************************************************************************
\r
16496 Note: The following SPICE model is for the transistor element.
\r
16497 When applying this SPICE model to your circuit simulation be certain
\r
16498 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
16499 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
16502 *SRC=DDTC144EUA;DI_DDTC144EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16503 .MODEL DI_DDTC144EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
16504 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
16505 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
16506 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
16507 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
16508 *****************************************************************************************************************************************
\r
16510 ******************************************************************************************************************************************
\r
16511 Note: The following SPICE model is for the transistor element.
\r
16512 When applying this SPICE model to your circuit simulation be certain
\r
16513 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
16514 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
16517 *SRC=DDTC144GE;DI_DDTC144GE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16518 .MODEL DI_DDTC144GE NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
16519 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
16520 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
16521 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
16522 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
16523 *****************************************************************************************************************************************
\r
16525 ******************************************************************************************************************************************
\r
16526 Note: The following SPICE model is for the transistor element.
\r
16527 When applying this SPICE model to your circuit simulation be certain
\r
16528 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
16529 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
16532 *SRC=DDTC144GKA;DI_DDTC144GKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16533 .MODEL DI_DDTC144GKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
16534 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
16535 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
16536 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
16537 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
16538 *****************************************************************************************************************************************
\r
16540 ******************************************************************************************************************************************
\r
16541 Note: The following SPICE model is for the transistor element.
\r
16542 When applying this SPICE model to your circuit simulation be certain
\r
16543 to add R1 and/or R2 values per the table found on sheet 1 of the data
\r
16544 sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
\r
16547 *SRC=DDTC144GUA;DI_DDTC144GUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16548 .MODEL DI_DDTC144GUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
16549 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
16550 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
16551 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
16552 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
16553 *****************************************************************************************************************************************
\r
16555 Note: The following SPICE model is for the transistor element.
\r
16556 When applying this SPICE model to your circuit simulation be certain to
\r
16557 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16558 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16560 *SRC=DDTC144TCA;DI_DDTC144TCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16561 .MODEL DI_DDTC144TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16562 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16563 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16564 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16565 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16567 Note: The following SPICE model is for the transistor element.
\r
16568 When applying this SPICE model to your circuit simulation be certain to
\r
16569 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16570 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16572 *SRC=DDTC144TE;DI_DDTC144TE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16573 .MODEL DI_DDTC144TE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16574 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16575 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16576 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16577 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16579 Note: The following SPICE model is for the transistor element.
\r
16580 When applying this SPICE model to your circuit simulation be certain to
\r
16581 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16582 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16584 *SRC=DDTC144TKA;DI_DDTC144TKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16585 .MODEL DI_DDTC144TKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16586 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16587 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16588 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16589 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16591 Note: The following SPICE model is for the transistor element.
\r
16592 When applying this SPICE model to your circuit simulation be certain to
\r
16593 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16594 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16596 *SRC=DDTC144TUA;DI_DDTC144TUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16597 .MODEL DI_DDTC144TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16598 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16599 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16600 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16601 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16603 Note: The following SPICE model is for the transistor element.
\r
16604 When applying this SPICE model to your circuit simulation be certain to
\r
16605 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16606 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16608 *SRC=DDTC144VCA;DI_DDTC144VCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16609 .MODEL DI_DDTC144VCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16610 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16611 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16612 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16613 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16615 Note: The following SPICE model is for the transistor element.
\r
16616 When applying this SPICE model to your circuit simulation be certain to
\r
16617 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16618 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16620 *SRC=DDTC144VE;DI_DDTC144VE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16621 .MODEL DI_DDTC144VE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16622 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16623 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16624 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16625 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16627 Note: The following SPICE model is for the transistor element.
\r
16628 When applying this SPICE model to your circuit simulation be certain to
\r
16629 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16630 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16632 *SRC=DDTC144VKA;DI_DDTC144VKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16633 .MODEL DI_DDTC144VKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16634 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16635 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16636 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16637 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16639 Note: The following SPICE model is for the transistor element.
\r
16640 When applying this SPICE model to your circuit simulation be certain to
\r
16641 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16642 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16644 *SRC=DDTC144VUA;DI_DDTC144VUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16645 .MODEL DI_DDTC144VUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16646 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16647 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16648 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16649 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16651 Note: The following SPICE model is for the transistor element.
\r
16652 When applying this SPICE model to your circuit simulation be certain to
\r
16653 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16654 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16656 *SRC=DDTC144WCA;DI_DDTC144WCA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16657 .MODEL DI_DDTC144WCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16658 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16659 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16660 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16661 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16663 Note: The following SPICE model is for the transistor element.
\r
16664 When applying this SPICE model to your circuit simulation be certain to
\r
16665 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16666 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16668 *SRC=DDTC144WE;DI_DDTC144WE;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16669 .MODEL DI_DDTC144WE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16670 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16671 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16672 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16673 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16675 Note: The following SPICE model is for the transistor element.
\r
16676 When applying this SPICE model to your circuit simulation be certain to
\r
16677 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16678 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16680 *SRC=DDTC144WKA;DI_DDTC144WKA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16681 .MODEL DI_DDTC144WKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16682 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16683 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16684 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16685 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16687 Note: The following SPICE model is for the transistor element.
\r
16688 When applying this SPICE model to your circuit simulation be certain to
\r
16689 add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
\r
16690 Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
\r
16692 *SRC=DDTC144WUA;DI_DDTC144WUA;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
16693 .MODEL DI_DDTC144WUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
\r
16694 + IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
\r
16695 + VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
\r
16696 + XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
\r
16697 + MJC=0.300 TF=567p TR=119n EG=1.12 )
\r
16699 **************************************************************************************************************************************
\r
16700 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16701 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16702 20% for R2/R1 ratio tolerance.
\r
16704 *SRC=DDTD113EC;DI_DDTD113EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16705 .MODEL DI_DDTD113EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16706 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16707 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16708 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16709 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16710 ******************************************************************************************************************************
\r
16712 **************************************************************************************************************************************
\r
16713 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16714 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16715 20% for R2/R1 ratio tolerance.
\r
16717 *SRC=DDTD113EU;DI_DDTD113EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16718 .MODEL DI_DDTD113EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16719 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16720 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16721 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16722 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16723 ******************************************************************************************************************************
\r
16725 **************************************************************************************************************************************
\r
16726 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16727 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16728 20% for R2/R1 ratio tolerance.
\r
16730 *SRC=DDTD113ZC;DI_DDTD113ZC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16731 .MODEL DI_DDTD113ZC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16732 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16733 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16734 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16735 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16736 ******************************************************************************************************************************
\r
16738 **************************************************************************************************************************************
\r
16739 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16740 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16741 20% for R2/R1 ratio tolerance.
\r
16743 *SRC=DDTD113ZU;DI_DDTD113ZU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16744 .MODEL DI_DDTD113ZU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16745 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16746 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16747 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16748 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16749 ******************************************************************************************************************************
\r
16751 **************************************************************************************************************************************
\r
16752 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16753 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16754 20% for R2/R1 ratio tolerance.
\r
16756 *SRC=DDTD114EC;DI_DDTD114EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16757 .MODEL DI_DDTD114EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16758 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16759 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16760 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16761 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16762 ******************************************************************************************************************************
\r
16764 **************************************************************************************************************************************
\r
16765 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16766 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16767 20% for R2/R1 ratio tolerance.
\r
16769 *SRC=DDTD114EU;DI_DDTD114EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16770 .MODEL DI_DDTD114EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16771 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16772 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16773 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16774 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16775 ******************************************************************************************************************************
\r
16777 **************************************************************************************************************************************
\r
16778 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16779 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16780 20% for R2/R1 ratio tolerance.
\r
16782 *SRC=DDTD114GC;DI_DDTD114GC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16783 .MODEL DI_DDTD114GC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16784 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16785 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16786 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16787 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16788 ******************************************************************************************************************************
\r
16790 **************************************************************************************************************************************
\r
16791 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16792 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16793 20% for R2/R1 ratio tolerance.
\r
16795 *SRC=DDTD114GU;DI_DDTD114GU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16796 .MODEL DI_DDTD114GU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16797 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16798 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16799 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16800 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16801 ******************************************************************************************************************************
\r
16803 **************************************************************************************************************************************
\r
16804 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16805 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16806 20% for R2/R1 ratio tolerance.
\r
16808 *SRC=DDTD114TC;DI_DDTD114TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16809 .MODEL DI_DDTD114TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16810 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16811 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16812 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16813 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16814 ******************************************************************************************************************************
\r
16816 **************************************************************************************************************************************
\r
16817 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16818 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16819 20% for R2/R1 ratio tolerance.
\r
16821 *SRC=DDTD114TU;DI_DDTD114TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16822 .MODEL DI_DDTD114TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16823 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16824 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16825 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16826 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16827 ******************************************************************************************************************************
\r
16829 **************************************************************************************************************************************
\r
16830 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16831 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16832 20% for R2/R1 ratio tolerance.
\r
16834 *SRC=DDTD122JC;DI_DDTD122JC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16835 .MODEL DI_DDTD122JC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16836 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16837 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16838 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16839 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16840 ******************************************************************************************************************************
\r
16842 **************************************************************************************************************************************
\r
16843 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16844 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16845 20% for R2/R1 ratio tolerance.
\r
16847 *SRC=DDTD122JU;DI_DDTD122JU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16848 .MODEL DI_DDTD122JU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16849 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16850 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16851 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16852 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16853 ******************************************************************************************************************************
\r
16855 **************************************************************************************************************************************
\r
16856 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16857 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16858 20% for R2/R1 ratio tolerance.
\r
16860 *SRC=DDTD122LC;DI_DDTD122LC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16861 .MODEL DI_DDTD122LC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16862 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16863 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16864 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16865 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16866 ******************************************************************************************************************************
\r
16868 **************************************************************************************************************************************
\r
16869 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16870 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16871 20% for R2/R1 ratio tolerance.
\r
16873 *SRC=DDTD122LU;DI_DDTD122LU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16874 .MODEL DI_DDTD122LU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16875 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16876 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16877 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16878 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16879 ******************************************************************************************************************************
\r
16881 **************************************************************************************************************************************
\r
16882 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16883 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16884 20% for R2/R1 ratio tolerance.
\r
16886 *SRC=DDTD122TC;DI_DDTD122TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16887 .MODEL DI_DDTD122TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16888 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16889 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16890 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16891 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16892 ******************************************************************************************************************************
\r
16894 **************************************************************************************************************************************
\r
16895 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16896 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16897 20% for R2/R1 ratio tolerance.
\r
16899 *SRC=DDTD122TU;DI_DDTD122TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16900 .MODEL DI_DDTD122TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16901 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16902 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16903 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16904 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16905 ******************************************************************************************************************************
\r
16907 **************************************************************************************************************************************
\r
16908 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16909 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16910 20% for R2/R1 ratio tolerance.
\r
16912 *SRC=DDTD123EC;DI_DDTD123EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16913 .MODEL DI_DDTD123EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16914 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16915 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16916 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16917 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16918 ******************************************************************************************************************************
\r
16920 **************************************************************************************************************************************
\r
16921 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16922 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16923 20% for R2/R1 ratio tolerance.
\r
16925 *SRC=DDTD123EU;DI_DDTD123EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16926 .MODEL DI_DDTD123EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16927 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16928 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16929 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16930 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16931 ******************************************************************************************************************************
\r
16933 **************************************************************************************************************************************
\r
16934 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16935 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16936 20% for R2/R1 ratio tolerance.
\r
16938 *SRC=DDTD123TC;DI_DDTD123TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16939 .MODEL DI_DDTD123TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16940 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16941 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16942 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16943 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16944 ******************************************************************************************************************************
\r
16946 **************************************************************************************************************************************
\r
16947 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16948 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16949 20% for R2/R1 ratio tolerance.
\r
16951 *SRC=DDTD123TU;DI_DDTD123TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16952 .MODEL DI_DDTD123TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16953 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16954 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16955 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16956 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16957 ******************************************************************************************************************************
\r
16959 **************************************************************************************************************************************
\r
16960 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16961 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16962 20% for R2/R1 ratio tolerance.
\r
16964 *SRC=DDTD123YC;DI_DDTD123YC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16965 .MODEL DI_DDTD123YC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16966 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16967 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16968 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16969 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16970 ******************************************************************************************************************************
\r
16972 **************************************************************************************************************************************
\r
16973 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16974 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16975 20% for R2/R1 ratio tolerance.
\r
16977 *SRC=DDTD123YU;DI_DDTD123YU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16978 .MODEL DI_DDTD123YU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16979 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16980 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16981 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16982 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16983 ******************************************************************************************************************************
\r
16985 **************************************************************************************************************************************
\r
16986 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
16987 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
16988 20% for R2/R1 ratio tolerance.
\r
16990 *SRC=DDTD133HC;DI_DDTD133HC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
16991 .MODEL DI_DDTD133HC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
16992 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
16993 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
16994 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
16995 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
16996 ******************************************************************************************************************************
\r
16998 **************************************************************************************************************************************
\r
16999 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
17000 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
17001 20% for R2/R1 ratio tolerance.
\r
17003 *SRC=DDTD133HU;DI_DDTD133HU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
17004 .MODEL DI_DDTD133HU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
17005 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
17006 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
17007 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
17008 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
17009 ******************************************************************************************************************************
\r
17011 **************************************************************************************************************************************
\r
17012 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
17013 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
17014 20% for R2/R1 ratio tolerance.
\r
17016 *SRC=DDTD142JC;DI_DDTD142JC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
17017 .MODEL DI_DDTD142JC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
17018 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
17019 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
17020 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
17021 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
17022 ******************************************************************************************************************************
\r
17024 **************************************************************************************************************************************
\r
17025 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
17026 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
17027 20% for R2/R1 ratio tolerance.
\r
17029 *SRC=DDTD142JU;DI_DDTD142JU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
17030 .MODEL DI_DDTD142JU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
17031 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
17032 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
17033 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
17034 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
17035 ******************************************************************************************************************************
\r
17037 **************************************************************************************************************************************
\r
17038 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
17039 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
17040 20% for R2/R1 ratio tolerance.
\r
17042 *SRC=DDTD142TC;DI_DDTD142TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
17043 .MODEL DI_DDTD142TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
17044 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
17045 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
17046 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
17047 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
17048 ******************************************************************************************************************************
\r
17050 **************************************************************************************************************************************
\r
17051 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
17052 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
17053 20% for R2/R1 ratio tolerance.
\r
17055 *SRC=DDTD142TU;DI_DDTD142TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
17056 .MODEL DI_DDTD142TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
17057 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
17058 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
17059 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
17060 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
17061 ******************************************************************************************************************************
\r
17063 **************************************************************************************************************************************
\r
17064 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
17065 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
17066 20% for R2/R1 ratio tolerance.
\r
17068 *SRC=DDTD143EC;DI_DDTD143EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
17069 .MODEL DI_DDTD143EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
17070 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
17071 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
17072 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
17073 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
17074 ******************************************************************************************************************************
\r
17076 **************************************************************************************************************************************
\r
17077 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
17078 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
17079 20% for R2/R1 ratio tolerance.
\r
17081 *SRC=DDTD143EU;DI_DDTD143EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
17082 .MODEL DI_DDTD143EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
17083 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
17084 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
17085 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
17086 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
17087 ******************************************************************************************************************************
\r
17089 **************************************************************************************************************************************
\r
17090 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
17091 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
17092 20% for R2/R1 ratio tolerance.
\r
17094 *SRC=DDTD143TC;DI_DDTD143TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
17095 .MODEL DI_DDTD143TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
17096 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
17097 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
17098 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
17099 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
17100 ******************************************************************************************************************************
\r
17102 **************************************************************************************************************************************
\r
17103 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
17104 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
17105 20% for R2/R1 ratio tolerance.
\r
17107 *SRC=DDTD143TU;DI_DDTD143TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
17108 .MODEL DI_DDTD143TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
17109 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
17110 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
17111 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
17112 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
17113 ******************************************************************************************************************************
\r
17115 ******************************************************************************************************************************
\r
17117 ******************************************************************************************************************************
\r
17118 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
17119 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
17120 20% for R2/R1 ratio tolerance.
\r
17122 *SRC=MIMD10A;DI_MIMD10A;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
\r
17123 .MODEL DI_MIMD10A PNP (IS=50.6f NF=1.00 BF=534 VAF=102
\r
17124 + IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
\r
17125 + VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
\r
17126 + XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
\r
17127 + MJC=0.300 TF=605p TR=120n EG=1.12 )
\r
17128 ******************************************************************************************************************************
\r
17130 ******************************************************************************************************************************
\r
17131 Note: The following SPICE model is for the transistor element. When applying this SPICE model to your circuit simulation be
\r
17132 certain to add R1 and/or R2 values per the table found on sheet 1 of the data sheet. Allow +/- 30% resistance tolerance and +/-
\r
17133 20% for R2/R1 ratio tolerance.
\r
17135 *SRC=MIMD10A;DI_MIMD10A;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
\r
17136 .MODEL DI_MIMD10A NPN (IS=16.8f NF=1.00 BF=766 VAF=127
\r
17137 + IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
\r
17138 + VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
\r
17139 + XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
\r
17140 + MJC=0.300 TF=549p TR=119n EG=1.12 )
\r
17141 ******************************************************************************************************************************
\r
17143 *SRC=2N7002;2N7002;MOSFETs N;Enh;60.0V 0.115A 7.50ohms Diodes Inc. -
\r
17144 .MODEL 2N7002 NMOS( LEVEL=1 VTO=2.50 KP=32.0m GAMMA=3.10
\r
17145 + PHI=.75 LAMBDA=39.9u RD=1.05 RS=1.05
\r
17146 + IS=57.5f PB=0.800 MJ=0.460 CBD=98.8p
\r
17147 + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n )
\r
17148 * -- Assumes default L=100U W=100U --
\r
17150 *SRC=2N7002DW;DI_2N7002DW;MOSFETs N;Enh;60.0V 0.115A 3.20ohms Diodes Inc. MOSFET - One element of dual
\r.MODEL DI_2N7002DW NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86
\r+ PHI=.75 LAMBDA=34.2u RD=0.448 RS=0.448
\r+ IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p
\r+ CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U --
\r
17152 *SRC=2N7002E;DI_2N7002E;MOSFETs N;Enh;60.0V 0.240A 4.00ohms Diodes Inc. MOSFET .MODEL DI_2N7002E NMOS( LEVEL=1 VTO=2.50 KP=781u GAMMA=3.10
\r
17153 + PHI=.75 LAMBDA=83.2u RD=0.560 RS=0.560
\r
17154 + IS=120f PB=0.800 MJ=0.460 CBD=44.5p
\r
17155 + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n )
\r
17156 * -- Assumes default L=100U W=100U --
\r
17158 *SRC=2N7002T;DI_2N7002T;MOSFETs N;Enh;60.0V 0.115A 2.00ohms Didoes Inc. MOSFET
\r.MODEL DI_2N7002T NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86
\r+ PHI=.75 LAMBDA=40.0u RD=0.280 RS=0.280
\r+ IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p
\r+ CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U --
\r
17160 *SRC=2N7002W;DI_2N7002W;MOSFETs N;Enh;60.0V 0.115A 3.20ohms Diodes Inc. MOSFET
\r.MODEL DI_2N7002W NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86
\r+ PHI=.75 LAMBDA=40.0u RD=0.448 RS=0.448
\r+ IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p
\r+ CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U --
\r
17162 *SRC=BS870;DI_BS870;MOSFETs N;Enh;60.0V 0.250A 3.50ohms Diodes Inc. MOSFET
\r.MODEL DI_BS870 NMOS( LEVEL=1 VTO=2.00 KP=32.0m GAMMA=2.48
\r+ PHI=.75 LAMBDA=86.8u RD=0.490 RS=0.490
\r+ IS=125f PB=0.800 MJ=0.460 CBD=29.8p
\r+ CBS=35.8p CGSO=24.0n CGDO=20.0n CGBO=176n ) * -- Assumes default L=100U W=100U --
\r
17164 *SRC=BSS123;DI_BSS123;MOSFETs N;Enh;100V 0.170A 1.00ohms Diodes Inc.
\r
17166 .MODEL DI_BSS123 NMOS( LEVEL=1 VTO=1.00 KP=6.37m GAMMA=1.24
\r
17167 + PHI=.75 LAMBDA=625u RD=0.140 RS=0.140
\r
17168 + IS=85.0f PB=0.800 MJ=0.460 CBD=19.8p
\r
17169 + CBS=23.7p CGSO=36.0n CGDO=30.0n CGBO=124n )
\r
17170 * -- Assumes default L=100U W=100U --
\r
17172 *SRC=BSS123W;DI_BSS123W;MOSFETs N;Enh;100V 0.170A 1.00ohms Diodes Inc. MOSFET
\r.MODEL DI_BSS123W NMOS( LEVEL=1 VTO=1.40 KP=0.805 GAMMA=1.74
\r+ PHI=.75 LAMBDA=41.8u RD=0.140 RS=0.140
\r+ IS=85.0f PB=0.800 MJ=0.460 CBD=39.5p
\r+ CBS=47.4p CGSO=24.0n CGDO=20.0n CGBO=246n ) * -- Assumes default L=100U W=100U --
\r
17174 *SRC=BSS138;DI_BSS138;MOSFETs N;Enh;50.0V 0.200A 1.40ohms Diodes Inc.
\r
17176 .MODEL DI_BSS138 NMOS( LEVEL=1 VTO=1.20 KP=7.50m GAMMA=1.49
\r
17177 + PHI=.75 LAMBDA=1.25m RD=0.196 RS=0.196
\r
17178 + IS=100f PB=0.800 MJ=0.460 CBD=18.4p
\r
17179 + CBS=22.0p CGSO=28.8n CGDO=24.0n CGBO=247n )
\r
17180 * -- Assumes default L=100U W=100U --
\r
17182 *SRC=BSS138DW;DI_BSS138DW;MOSFETs N;Enh;50.0V 0.200A 1.60ohms Diodes Inc. MOSFET - One element of dual
\r.MODEL DI_BSS138DW NMOS( LEVEL=1 VTO=1.20 KP=50.0m GAMMA=1.49
\r+ PHI=.75 LAMBDA=83.2u RD=0.224 RS=0.224
\r+ IS=100f PB=0.800 MJ=0.460 CBD=56.3p
\r+ CBS=67.5p CGSO=96.0n CGDO=80.0n CGBO=324n ) * -- Assumes default L=100U W=100U --
\r
17184 *SRC=BSS138W;DI_BSS138W;MOSFETs N;Enh;50.0V 0.200A 1.60ohms Diodes Inc. MOSFET
\r.MODEL DI_BSS138W NMOS( LEVEL=1 VTO=1.20 KP=50.0m GAMMA=1.49
\r+ PHI=.75 LAMBDA=83.2u RD=0.224 RS=0.224
\r+ IS=100f PB=0.800 MJ=0.460 CBD=56.3p
\r+ CBS=67.5p CGSO=96.0n CGDO=80.0n CGBO=324n ) * -- Assumes default L=100U W=100U --
\r
17186 *SRC=BSS84;DI_BSS84;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET
\r
17187 .MODEL DI_BSS84 PMOS( LEVEL=1 VTO=-1.60 KP=4.87m GAMMA=1.98
\r
17188 + PHI=.75 LAMBDA=1.25m RD=0.840 RS=0.840
\r
17189 + IS=65.0f PB=0.800 MJ=0.460 CBD=46.6p
\r
17190 + CBS=55.9p CGSO=50.7n CGDO=42.2n CGBO=69.5n )
\r
17191 * -- Assumes default L=100U W=100U --
\r
17193 *SRC=BSS84;DI_BSS84;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET
\r
17194 .MODEL DI_BSS84 PMOS( LEVEL=1 VTO=-1.60 KP=4.87m GAMMA=1.98
\r
17195 + PHI=.75 LAMBDA=1.25m RD=0.840 RS=0.840
\r
17196 + IS=65.0f PB=0.800 MJ=0.460 CBD=46.6p
\r
17197 + CBS=55.9p CGSO=50.7n CGDO=42.2n CGBO=69.5n )
\r
17198 * -- Assumes default L=100U W=100U --
\r
17200 *SRC=2N7002;2N7002;MOSFETs N;Enh;60.0V 0.115A 7.50ohms Diodes Inc. -
\r
17201 .MODEL 2N7002 NMOS( LEVEL=1 VTO=2.50 KP=32.0m GAMMA=3.10
\r
17202 + PHI=.75 LAMBDA=39.9u RD=1.05 RS=1.05
\r
17203 + IS=57.5f PB=0.800 MJ=0.460 CBD=98.8p
\r
17204 + CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n )
\r
17205 * -- Assumes default L=100U W=100U --
\r
17207 *SRC=BSS84DW;DI_BSS84DW;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET- One element of dual
\r.MODEL DI_BSS84DW PMOS( LEVEL=1 VTO=-1.60 KP=25.0m GAMMA=1.98
\r+ PHI=.75 LAMBDA=108u RD=0.840 RS=0.840
\r+ IS=65.0f PB=0.800 MJ=0.460 CBD=43.0p
\r+ CBS=51.7p CGSO=144n CGDO=120n CGBO=186n ) * -- Assumes default L=100U W=100U --
\r
17209 *SRC=BSS84W;DI_BSS84W;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET
\r.MODEL DI_BSS84W PMOS( LEVEL=1 VTO=-1.60 KP=25.0m GAMMA=1.98
\r+ PHI=.75 LAMBDA=108u RD=0.840 RS=0.840
\r+ IS=65.0f PB=0.800 MJ=0.460 CBD=64.2p
\r+ CBS=77.1p CGSO=144n CGDO=120n CGBO=341n ) * -- Assumes default L=100U W=100U --
\r
17211 *SRC=DMN100;DI_DMN100;MOSFETs N;Enh;30.0V 1.10A 0.150ohms Diodes Inc. MOSFET
\r.MODEL DI_DMN100 NMOS( LEVEL=1 VTO=2.00 KP=11.5 GAMMA=2.48
\r+ PHI=.75 LAMBDA=306u RD=21.0m RS=21.0m
\r+ IS=550f PB=0.800 MJ=0.460 CBD=199p
\r+ CBS=238p CGSO=360n CGDO=300n CGBO=840n ) * -- Assumes default L=100U W=100U --
\r
17213 *SRC=MMBF170;DI_MMBF170;MOSFETs N;Enh;60.0V 0.500A 2.10ohms Diodes Inc. MOSFET
\r
17214 .MODEL DI_MMBF170 NMOS( LEVEL=1 VTO=2.10 KP=18.8m GAMMA=2.60
\r
17215 + PHI=.75 LAMBDA=1.04m RD=0.294 RS=0.294
\r
17216 + IS=250f PB=0.800 MJ=0.460 CBD=29.8p
\r
17217 + CBS=35.8p CGSO=24.0n CGDO=20.0n CGBO=176n )
\r
17218 * -- Assumes default L=100U W=100U --
\r
17220 *******************************************************************************************************************************
\r
17221 *SRC=CTA2N1P;DI_CTA2N1P_BJT;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc. BJTs
\r
17222 .MODEL DI_CTA2N1P_BJT NPN (IS=1.27p NF=1.00 BF=410 VAF=114
\r
17223 + IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00
\r
17224 + VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104
\r
17225 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300
\r
17226 + MJC=0.300 TF=533p TR=84.1n EG=1.12 )
\r
17228 *SRC=CTA2N1P;DI_CTA2N1P_MOSFET;MOSFETs P;Enh;50.0V 0.130A 6.00ohms Diodes Inc. MOSFET
\r
17229 .MODEL DI_CTA2N1P_MOSFET PMOS( LEVEL=1 VTO=-1.60 KP=25.0m GAMMA=1.98
\r
17230 + PHI=.75 LAMBDA=108u RD=0.840 RS=0.840
\r
17231 + IS=65.0f PB=0.800 MJ=0.460 CBD=64.2p
\r
17232 + CBS=77.1p CGSO=144n CGDO=120n CGBO=341n )
\r
17233 * -- Assumes default L=100U W=100U --
\r
17234 *******************************************************************************************************************************
\r
17236 ----------------------------------------------------------------------------------------------------------------------------------------------------------------
\r
17237 *SRC=CTA2P1N;DI_CTA2P1N_BJT;BJTs PNP; Si; 40.0V 0.600A 200MHz Diodes Inc. BJTs
\r
17238 .MODEL DI_CTA2P1N_BJT PNP (IS=60.4f NF=1.00 BF=410 VAF=114
\r
17239 + IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00
\r
17240 + VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104
\r
17241 + XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300
\r
17242 + MJC=0.300 TF=667p TR=84.1n EG=1.12 )
\r
17244 *SRC=CTA2P1N;DI_CTA2P1N_MOSFET;MOSFETs N;Enh;60.0V 0.115A 2.00ohms Didoes Inc. MOSFET
\r
17245 .MODEL DI_CTA2P1N_MOSFET NMOS( LEVEL=1 VTO=1.50 KP=32.0m GAMMA=1.86
\r
17246 + PHI=.75 LAMBDA=40.0u RD=0.280 RS=0.280
\r
17247 + IS=57.5f PB=0.800 MJ=0.460 CBD=44.5p
\r
17248 + CBS=53.4p CGSO=24.0n CGDO=20.0n CGBO=176n )
\r
17249 * -- Assumes default L=100U W=100U --
\r
17250 -----------------------------------------------------------------------------------------------------------------------------------------------------------------
\r